High-temperature-resistant resistor element

Abstract

The utility model provides a high-temperature-resistant resistor element. The high-temperature-resistant resistor element comprises a substrate layer, a first surface electrode layer and a second surface electrode layer, the first surface electrode layer is arranged on a first surface of the substrate layer, the resistive layer partially covers the first surface electrode layer and the substrate layer, and the second surface electrode layer is aligned with the first surface electrode layer and covers the first surface electrode layer and the resistive layer. The resistive layer is clamped between the first surface electrode layer and the second surface electrode layer, and the first surface electrode layer, the resistive layer and the second surface electrode layer form a composite structure to inhibit the resistance value variation of the high-temperature-resistant resistive element at high temperature.

Description

TECHNICAL FIELD

[0001] The utility model relates to a thin film resistance, especially to a high-temperature-resistant thin film resistance with a composite electrode structure. BACKGROUND

[0002] With the increasing requirement for the performance of products, passive elements need to have a wide working temperature range for use in harsh environments, high-temperature production lines, or high-power modules, etc. However, due to the limitation of material properties, conventional passive elements have technical problems such as short service life and high loss at high temperatures.

[0003] For example, the working temperature of conventional thin film resistors is generally between 20 and 150°C. At a high temperature above 150°C, because each film layer of the thin film resistor has different resistance temperature coefficients and temperature expansion rates, the metal electrode layer has a high resistance value at high temperatures. Therefore, the thin film resistor often has thermal deformation and resistance value drift, which reduces the precision and reliability of the thin film resistor, and limits its temperature in welding, rework, baking, and application. SUMMARY

[0004] Therefore, the utility model provides a high-temperature-resistant thin film resistance with a composite electrode structure, which can effectively reduce the resistance value deviation of the thin film resistance above 150°C. The details are described below.

[0005] The utility model provides a kind of high-temperature-resistant resistance element, it includes: substrate layer, first surface electrode layer, resistance layer and second surface electrode layer.First surface electrode layer is arranged in the first surface of substrate layer, resistance layer is partially covered on first surface electrode layer and substrate layer, second surface electrode layer is arranged in alignment with first surface electrode layer and covers on first surface electrode layer and resistance layer, so that resistance layer is clamped between first surface electrode layer and second surface electrode layer, first surface electrode layer, resistance layer and second surface electrode layer form composite structure to inhibit the resistance value variation of high-temperature-resistant resistance element at high temperature.

[0006] Preferably, the high-temperature-resistant resistance element further includes: a back electrode layer, which is arranged on the second surface of the substrate and corresponds to the first surface electrode layer.

[0007] Preferably, the high-temperature-resistant resistance element further includes: a protective layer, which is arranged relative to the resistance layer and covers the second surface electrode layer and the resistance layer.

[0008] Preferably, the protective layer is epoxy resin.

[0009] Preferably, the high-temperature-resistant resistance element further includes: a first side electrode layer, which partially covers the protective layer, the second surface electrode layer, the first surface electrode layer, the substrate layer, and the back electrode layer.

[0010] Preferably, the high-temperature-resistant resistance element further comprises: a second side electrode layer, the second side electrode layer covering the first side electrode layer.

[0011] Preferably, the first side electrode layer is nickel.

[0012] Preferably, the second side electrode layer is tin.

[0013] Preferably, the resistance layer is a nickel-chromium alloy or a silicon-chromium alloy.

[0014] The high-temperature-resistant resistance element effectively improves the temperature resistance, and the resistance value change amount is 2-10% at 150-350°C, preventing the resistance value from drifting, and maintaining the resistance value precision and reliability for a long time in a high-temperature environment. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 is an embodiment of the high-temperature-resistant resistance element of the utility model.

[0016] Figure 2 is Figure 1 The high-temperature-resistant resistance element of the utility model along the A-A' line is taken along the sectional view, and is provided with a first side electrode layer and a second side electrode layer.

[0017] Figure 3 is a flow chart of the manufacturing method of the high-temperature-resistant resistance element of the utility model

[0018] REFERENCE NUMERALS

[0019] 1: high-temperature-resistant resistance element

[0020] 10: substrate layer

[0021] 20: composite structure

[0022] 21: first surface electrode layer

[0023] 22: second surface electrode layer

[0024] 30: resistance layer

[0025] 40: protective layer

[0026] 50: first side electrode layer

[0027] 60: second side electrode layer

[0028] 70: back electrode layer

[0029] A-A': line

[0030] S100-S107: step DETAILED DESCRIPTION

[0031] The following embodiments are combined with the drawings to illustrate the spirit of the present application, so that the skilled in the art of the present application can clearly understand the technology of the present application, but not to limit the scope of the present application, the scope of the patent right of the present application should be defined by the claims. It is particularly emphasized that the drawings are for illustration only and not represent the actual size or quantity of the components, and some details may not be completely drawn, in order to simplify the drawings.

[0032] For the sake of simplicity, a rectangular resistor is taken as an example, but it should be understood that it is used for illustration and not for limiting the present application, the high-temperature-resistant resistor element of the present application can be implemented in any shape.

[0033] Please refer to Figures 1 to 3 , Figure 1 is an embodiment of the high-temperature-resistant resistor element of the present application, Figure 2 is Figure 1 the cross-sectional view of the high-temperature-resistant resistor element of Figure 3 is a flowchart of the manufacturing method of the high-temperature-resistant resistor element of the present application.

[0034] The present application provides a high-temperature-resistant resistor element 1, which comprises a substrate layer 10, a first surface electrode layer 21, a resistance layer 30, a second surface electrode layer 22, a back electrode layer 70, a protective layer 40, a first side electrode layer 50 and a second side electrode layer 60. A composite structure 20 is formed by the first surface electrode layer 21, the second surface electrode layer 22, the resistance layer 30 and the protective layer 40 to increase the temperature resistance of the resistor and suppress the change in resistance value of the high-temperature-resistant resistor element at high temperature.

[0035] The manufacturing method of the high-temperature-resistant resistor element 1 of the present application is as follows:

[0036] Step S100, a substrate layer 10 is provided, and the material of the substrate layer 10 can be alumina with a purity of 96% to 99%.

[0037] Step S101, the first surface electrode layer 21 and the back electrode layer 70 are printed on the substrate layer 10, and sintering is performed at 850°C, so that the first surface electrode layer 21 is arranged on the first surface of the substrate layer 10, and the back electrode layer 70 is arranged on the second surface of the substrate and corresponds to the first surface electrode layer 21. The material of the first surface electrode layer 21 can be the same as that of the back electrode layer 70, and the materials of the first surface electrode layer 21 and the second surface electrode layer 22 can be selected from silver or copper, respectively.

[0038] Step S102, printing a mask layer on the substrate layer 10 and the first surface electrode layer 21, and depositing the resistance layer 30 with metal, then performing annealing treatment and removing the mask layer, so that the resistance layer 30 partially covers the first surface electrode layer and the substrate layer 10, and the material of the resistance layer 30 can be selected from nickel-chromium alloy or silicon-chromium alloy.

[0039] Step S103, printing the second surface electrode layer 22 on the first surface electrode layer 21 and the resistance layer 30, and sintering at 850°C. The second surface electrode layer 22 is arranged in alignment with the first surface electrode layer 21 and covers the first surface electrode layer 21 and the resistance layer 30, so that the resistance layer 30 is clamped between the first surface electrode layer and the second surface electrode layer, and the material of the second surface electrode layer 22 can be the same as that of the first surface electrode layer 21, and the material of the second surface electrode layer 22 can be silver or copper.

[0040] In some embodiments, the thickness ratio of the first surface electrode layer 21, the second surface electrode layer 22 and the back electrode layer 70 is 1:1:1.

[0041] In some embodiments, the thickness of the resistance layer 30 is smaller than the thickness of the first surface electrode layer 21 and the second surface electrode layer 22, so as to define a groove.

[0042] Step S104, according to the required resistance, laser scribing the resistance layer 30 to adjust the resistance.

[0043] Step S105, printing the protective layer 40 on the second surface electrode layer 22 and the resistance layer 30, and curing. The protective layer 40 is arranged relative to the resistance layer 30 and covers the second surface electrode layer and the resistance layer 30, the size of the protective layer 40 can be equal to or greater than the resistance layer 30, and part of the protective layer 40 is filled into the groove to form a composite structure 20, which improves the thermal stability of the high-temperature resistance element 1 as a whole under high temperature, and the material of the protective layer 40 can be epoxy resin.

[0044] Step S106, electroplating the first side electrode on the end surface of the protective layer 40, the second surface electrode layer 22, the first surface electrode layer 21, the substrate layer 10 and the back electrode layer 70, so that the first side electrode layer 50 partially covers the protective layer 40, the second surface electrode layer 22, the first surface electrode layer 21, the substrate layer 10 and the back electrode layer 70, and the first side electrode layer 50 can be nickel.

[0045] Step S107, electroplating the second side electrode on the first side electrode, so that the second side electrode layer 60 completely covers the first side electrode layer 50, and the second side electrode layer 60 can be tin.

[0046] The printing, sintering, deposition and annealing processes used in the utility model can be performed by existing technologies to achieve the same effect. In order to make the description brief, the utility model will not be described in detail.

[0047] In order to test the temperature resistance of the high-temperature-resistant resistance element, the high-temperature-resistant resistance element is taken as an embodiment, and the resistance value change amount of two resistances with a resistance value of 10KΩ is measured at 150-350°C, and the experimental results are shown in Table 1.

[0048] [Table 1]

[0049]

[0050]

[0051] Therefore, the high-temperature-resistant resistance element effectively improves the temperature resistance, and the resistance value change amount is 2-10% at 150-350°C, the resistance value drift is prevented, and the resistance value accuracy and reliability can be maintained for a long time in a high-temperature environment.

Claims

1. A high-temperature-resistant resistance element, characterized by comprising: It comprises: a substrate layer; a first surface electrode layer disposed on a first surface of the substrate layer; a resistance layer partially covering the first surface electrode layer and the substrate layer; and a second surface electrode layer disposed in alignment with the first surface electrode layer and covering the first surface electrode layer and the resistance layer, such that the resistance layer is sandwiched between the first surface electrode layer and the second surface electrode layer; wherein the first surface electrode layer, the resistance layer, and the second surface electrode layer form a composite structure to suppress a resistance value change amount of the high-temperature-resistant resistance element at high temperature. It further comprises a back electrode layer disposed on a second surface of the substrate and corresponding to the first surface electrode layer.

2. The high-temperature-resistant resistance element according to claim 1, wherein It further comprises a protective layer disposed relative to the resistance layer and covering the second surface electrode layer and the resistance layer.

3. The high-temperature-resistant resistance element according to claim 2, wherein The protective layer is an epoxy resin.

4. The high-temperature-resistant resistance element according to claim 3, wherein It further comprises a first side electrode layer partially covering the protective layer, the second surface electrode layer, the first surface electrode layer, the substrate layer, and the back electrode layer.

5. The high-temperature-resistant resistance element according to claim 3, wherein It further comprises a second side electrode layer covering the first side electrode layer.

6. The high-temperature-resistant resistance element according to claim 5, wherein The first side electrode layer is nickel.

7. The high-temperature-resistant resistance element according to claim 6, wherein The second side electrode layer is tin.

8. The high-temperature-resistant resistance element according to claim 6, wherein The resistance layer is a nickel-chromium alloy or a silicon-chromium alloy.

9. The refractory resistance element of claim 1 wherein, ​

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