Circuit board structure for high-power switching power supply

By integrating MOSFETs and driver devices onto an aluminum substrate through a stacked design, the problem of single-sided mounting on the aluminum substrate is solved, enabling efficient circuit operation. This also addresses the challenge of balancing heat dissipation, mounting, and driver design for power MOSFETs, thereby improving the circuit reliability and stability of high-power switching power supplies.

CN223744976UActive Publication Date: 2025-12-30广东顺德三扬科技股份有限公司
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Patent Information

Application Number
CN202520285405.8
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-02-21
Publication Date
2025-12-30
Estimated Expiration
2035-02-21

AI Technical Summary

Technical Problem

In high-power switching power supplies, only one side of the aluminum substrate can be used to mount circuit devices, which leads to limited device layout, increased circuit design complexity, and parasitic parameters affecting circuit performance.

Method used

The stacked design integrates the first and second stacks onto the substrate, which are used to mount MOSFETs and driver devices respectively. This optimizes the layout, simplifies the rectifier circuit design, reduces nodes, and enables mechanical and electrical connections through pins.

Benefits of technology

It improves space utilization, simplifies design complexity, enhances circuit reliability and stability, reduces transmission time and loss, and increases integration and power density.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model belongs to the technical field of high-power switching power supplies, and particularly discloses a circuit board structure for a high-power switching power supply, which comprises a substrate, a first laminated plate and a second laminated plate. The substrate is provided with a circuit layer, an insulating layer and a metal base layer, a wiring area is arranged in the middle of the circuit layer, and element arrangement areas are arranged on the two sides of the circuit layer and used for installing MOSFETs. The first laminated plate is used for mounting a rectifying device, and the second laminated plate is used for mounting a driving device. According to the design, the element layout is optimized, the rectification circuit design is simplified, the space utilization rate is improved, current and signal transmission is more direct and efficient, the transmission loss and temperature rise are reduced, the circuit reliability and stability are enhanced, the design complexity is simplified, and the circuit integration level and the power density are improved; the problems of heat dissipation, installation, current sharing and driving design in a high-power switching power supply are effectively solved.
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Description

TECHNICAL FIELD

[0001] The utility model belongs to synchronous rectification technical field, concretely is a kind of circuit board structure for high-power switching power supply. BACKGROUND

[0002] Aluminum substrate, as a kind of metal-based copper-clad plate with efficient heat dissipation and good electrical performance, its unique three-layer structure design provides excellent heat conduction path for power device. High-power devices such as power MOSFET are closely attached to the circuit layer through advanced surface mounting technology, and the heat generated during operation can be quickly conducted to the metal base through the insulating layer, and then the heat is efficiently dissipated to the surrounding environment by the metal base. This innovative heat management method greatly reduces the operating temperature of the module, effectively prolonging the service life of the equipment. At the same time, the application of aluminum substrate also greatly reduces the dependence on heat sinks and other auxiliary heat dissipation hardware.

[0003] However, aluminum substrate also has certain limitations in high-power switching power supply applications. Due to its structural characteristics, aluminum substrate has only one side that can be used to mount circuit devices, i.e. the circuit layer. This leads to a problem in high-power applications: high-power devices such as power MOSFET tubes need to be installed on the aluminum substrate to fully utilize its heat dissipation advantages, while other circuit devices have to be installed on another circuit board. This separate installation method not only increases the complexity and difficulty of circuit design, but also introduces additional parasitic inductance and resistance through power line connections, which can adversely affect the performance and stability of the circuit, such as increased noise and reduced efficiency.

[0004] In summary, due to the fact that aluminum substrate has only one mounting surface, it leads to problems such as limited device layout, increased complexity of circuit design and parasitic parameters affecting circuit performance when applied to high-power switching power supply. SUMMARY

[0005] The purpose of the utility model is to overcome the shortcomings of the prior art and provide a circuit board structure for high-power switching power supply.

[0006] To solve the above technical problems, the utility model adopts the following technical solutions:

[0007] The circuit board structure for high-power switching power supply at least includes a substrate, a first laminated board and a second laminated board. The substrate has a circuit layer, an insulating layer and a metal base from top to bottom. The circuit layer has a wiring area in the middle and component arrangement areas on both sides of the wiring area. The first laminated board and the second laminated board are arranged above the substrate from top to bottom through a connecting structure and are opposite to the middle part of the substrate.

[0008] The utility model discloses a laminated design, and the first laminated plate and the second laminated plate are integrated on the substrate. The substrate is provided with an element arrangement area for mounting the MOSFET tube; the first laminated plate is used for mounting the rectifier device, and the second laminated plate is used for mounting the driving device. This design optimizes the layout, simplifies the design of the rectifier circuit, shortens the path of the rectifier circuit, and reduces unnecessary nodes. Compared with the prior art, the laminated design improves the space utilization, makes the transmission of current and signal in the circuit more direct and efficient, reduces the transmission time and loss, reduces the temperature rise, enhances the reliability and stability of the circuit, simplifies the design complexity, and improves the integration and power density of the circuit. This scheme effectively solves the problem that the heat dissipation, installation, current sharing and driving design of the power MOSFET tube are difficult to consider in the application of high-power switching power supply.

[0009] Further, the first laminated plate is fixedly connected and electrically connected with the substrate through the first pin; and the second laminated plate is fixedly connected and electrically connected with the substrate through the second pin. In this way, not only the mechanical fixing problem of the first laminated plate, the second laminated plate and the substrate is solved, but also the first laminated plate and the second laminated plate can be electrically connected with the circuit layer on the substrate through the pins, so that signal transmission is realized through the pins. During work, the external driving signal is first sent to the second laminated plate, and then transmitted to the first laminated plate through the second laminated plate and the second pin, and then transmitted to the substrate by the first laminated plate. After receiving the external driving signal, the substrate sends a feedback signal through the first pin.

[0010] Further, the wiring area and the element arrangement area are arranged along the length direction of the substrate, wherein the element arrangement area is symmetrically arranged as two, the edge of the first laminated plate coincides with the edge of the wiring area or is located inside the wiring area; and the two sides of the second laminated plate are flush with the edge of the first laminated plate or protrude from the first laminated plate. This design ensures that the first laminated plate does not interfere with the elements in the element arrangement area, and at the same time allows the second laminated plate to select a circuit board with a larger width size according to needs.

[0011] Further, the circuit layer is provided with a power conversion circuit, the first laminated plate is provided with a current limiting circuit, and the second laminated plate is provided with a driving circuit. The driving circuit is electrically connected with the driving input end of the power conversion circuit, and the current limiting circuit is connected in series between the driving circuit and the driving input end of the power conversion circuit.

[0012] Further, the circuit layer is provided with a power conversion circuit, the first laminated plate is provided with a current limiting circuit, and the second laminated plate is provided with a driving circuit. The driving circuit is electrically connected with the driving input end of the power conversion circuit, and the current limiting circuit is connected in series between the driving circuit and the driving input end of the power conversion circuit.

[0013] Further, the two element arrangement regions are respectively set as a first arrangement region and a second arrangement region, and n MOSFET tubes are symmetrically arranged at equal intervals along the length direction of the first arrangement region and the second arrangement region; the current input end of the MOSFET tube in the first arrangement region is electrically connected with the power connection region on the adjacent side, and the current output end is connected with the current input end of the MOSFET tube in the second arrangement region; the current output end of the MOSFET tube in the second arrangement region is electrically connected with the power connection region on the other side, thereby forming a power conversion circuit in series, and since there are n such combinations, n parallel power conversion circuits are formed. The power conversion circuits in the scheme are linear path circuits with equal intervals and equal lengths, effectively avoiding the problems of long path and complex detours in the traditional horizontal layout.

[0014] Further, the first laminated plate is provided with N current limiting regions along the length direction, and two groups of current limiting circuits are arranged in each current limiting region; the second laminated plate is provided with a connecting part corresponding to each current limiting region on the side, the connecting part is electrically connected with the rectifier circuit in the current limiting region in one-to-one mode, the position of the connecting part is opposite to the position of the driving pin of the MOSFET tube device, and the connecting part is welded and fixed with the driving pin.

[0015] Further, the connecting part is in the shape of a rectangle, and the upper surface, the lower surface, the front surface and the side surface close to the MOSFET tube device are all covered with a conductive layer. Through the design of the conductive layer, the soldering tin is more likely to be hung on the MOSFET tube pin and the PCB during soldering, so that the soldering is more simple and fast, the technical requirements for the soldering workers are greatly reduced, the contact reliability during soldering is improved, the electrical connection problems caused by poor soldering are reduced, and the reliability and stability of the entire electronic device are improved.

[0016] Further, the conductive layer is made of gold plating process. The gold plating process can fully utilize the uniform deposition characteristics of chemical gold plating to form a conductive layer on the side surface of the connecting part. Since the volume of the connecting part is small, it is difficult to form an effective conductive layer on the side surface by using the traditional process. Further, the substrate is an aluminum substrate, and the first laminated plate and the second laminated plate are double-sided printed circuit boards. BRIEF DESCRIPTION OF DRAWINGS

[0017] Fig. 1 It is a schematic diagram of the overall circuit board structure;

[0018] Fig. 2 It is a structural exploded view of the circuit board structure;

[0019] Fig. 3 It is a layout schematic diagram of the circuit layer of the circuit board structure;

[0020] REFERENCE NUMERALS:

[0021] The substrate 1, the wiring area 11, the element arrangement area 12, the power connection area 13, the MOSFET tube 14, the first laminated plate 2, the second laminated plate 3, the first pin 4, and the second pin 5. DETAILED DESCRIPTION

[0022] A preferred specific embodiment of the utility model is described below in combination with the drawings.

[0023] In the description of the utility model, it is understood that the directions or position relations indicated by "upper", "lower", "left", "right", "front", "rear", "inner" and "outer" are based on the directions or position relations shown in the drawings, and are only for the convenience of describing the utility model and simplifying the description, and thus cannot be understood as limiting the utility model.

[0024] Referring to Figs. 1-3 As shown in the drawings, the utility model discloses a kind of circuit board structures for high-power switching power supply, at least including substrate 1, first laminated plate 2 and second laminated plate 3, substrate 1 is sequentially provided with circuit layer, insulating layer and metal base layer from top to bottom, the middle part of the circuit layer is provided with wiring area 11, and element arrangement area 12 is provided on the opposite sides of wiring area 11, first laminated plate 2, second laminated plate 3 are arranged in the upper of substrate 1 from top to bottom by connecting structure, and with the middle part of substrate 1 opposite.

[0025] Further, the first laminated plate 2 is fixedly connected and electrically connected with the substrate 1 by the first pin 4;The second laminated plate 3 is fixedly connected and electrically connected with the substrate 1 by the second pin 5. In this way, not only the mechanical fixing problem of the first laminated plate 2, the second laminated plate 3 and the substrate 1 is solved, but also the first laminated plate 2 and the second laminated plate 3 can be electrically connected with the circuit layer on the substrate 1 through the pin, so that signal transmission is carried out through the pin.

[0026] Further, wiring area 11 and element arrangement area 12 are arranged along the length direction of substrate 1, wherein element arrangement area 12 is symmetrically arranged as two, the size of first laminated plate 2 is matched with wiring area 11;The two sides of the second laminated plate 3 are flush with the edge of the first laminated plate 2 or protrude from the first laminated plate 2, which ensures that the first laminated plate 2 does not interfere with the elements in the element arrangement area 12, and allows the second laminated plate 3 to select a circuit board with a larger width size according to needs.

[0027] Further, the circuit layer is provided with a power conversion circuit, the first laminated plate 2 is provided with a current limiting circuit, and the second laminated plate 3 is provided with a driving circuit, the driving circuit is electrically connected with the driving input end of the power conversion circuit, and the current limiting circuit is connected in series between the driving circuit and the driving input end of the power conversion circuit.

[0028] Further, the circuit layer is provided with an electricity connection area 13, which is arranged on opposite sides of the circuit layer along the length direction of the circuit layer, and the electricity connection area 13 is provided with an external electricity connection hole for connecting the substrate 1 with an external power supply and a load.

[0029] Further, the two element arrangement areas are respectively a first arrangement area and a second arrangement area, and each of the two arrangement areas is provided with n MOSFET tubes arranged at equal intervals and symmetrically along the length direction of the arrangement area, the current input end of the MOSFET tube in the first arrangement area is electrically connected with the electricity connection area 13 on the adjacent side, and the current output end of the MOSFET tube is connected with the current input end of the MOSFET tube in the second arrangement area; the current output end of the MOSFET tube in the second arrangement area is electrically connected with the electricity connection area 13 on the other side, thereby forming a power conversion circuit in series, and since there are n such combinations, n parallel power conversion circuits are formed. The power conversion circuits in the present scheme are all linear path circuits with equal intervals and equal lengths, which effectively avoids the problem of long and complex path in the traditional horizontal layout.

[0030] Further, the first laminated plate 2 is provided with N current limiting areas along the length direction of the first laminated plate 2, each of the current limiting areas is provided with two groups of current limiting circuits, the second laminated plate 3 is provided with a connecting part corresponding to each of the current limiting areas, the connecting part is electrically connected with the rectifier circuit in the current limiting area in a one-to-one manner, the position of the connecting part is opposite to the position of the driving pin of the MOSFET tube device, and the connecting part is welded and fixed with the driving pin.

[0031] Further, the connecting part is in a rectangular shape, and the upper surface, the lower surface, the front surface and the side surface close to the MOSFET tube device of the connecting part are all covered with a conductive layer.

[0032] Further, the conductive layer is made of gold plating process.

[0033] Further, the substrate 1 is an aluminum substrate 1, and the first laminated plate 2 and the second laminated plate 3 are double-sided printed circuit boards.

[0034] The utility model discloses a laminated design, first laminated plate 2 and second laminated plate 3 are integrated to the substrate 1. The substrate 1 is equipped with component arrangement area 12 for installing MOSFET pipe, first laminated plate 2 is used to install rectifier, and second laminated plate 3 is used to install driver. This design optimizes the layout, simplifies the design of rectifier circuit, shortens the path of rectifier circuit and reduces unnecessary nodes. Compared with prior art, the laminated design improves the space utilization, makes the transmission of current and signal in the circuit more direct and efficient, reduces the transmission time and loss, reduces the temperature rise, enhances the reliability and stability of the circuit, simplifies the design complexity and improves the integration and power density of the circuit. The scheme effectively solves the problem that the heat dissipation, installation, current sharing and driving design of power MOSFET pipe are difficult to consider in the application of high-power switching power supply.

[0035] According to the disclosure and teaching of the above description, the skilled in the art of the utility model can also change and modify the above embodiments. Therefore, the utility model is not limited to the specific embodiments disclosed and described above, and some modifications and changes of the utility model should fall within the protection scope of the claims of the utility model. In addition, although some specific terms are used in the specification, these terms are only for convenience of explanation and do not constitute any limitation on the utility model.

Claims

1. A circuit board structure for a high power switching power supply, characterized by, At least comprising a substrate, a first laminated plate and a second laminated plate, the substrate is sequentially provided with a circuit layer, an insulating layer and a metal base layer from top to bottom, the circuit layer is provided with a wiring area in the middle part and element arrangement areas on the opposite sides of the wiring area, the first laminated plate and the second laminated plate are arranged above the circuit layer of the substrate from top to bottom through a connecting structure and opposite to the middle part of the substrate.

2. The circuit board structure according to claim 1, characterized by The first laminated plate is fixedly and electrically connected with the substrate through a first pin, and the second laminated plate is fixedly and electrically connected with the substrate through a second pin.

3. The circuit board structure according to claim 2, characterized by The wiring area and the element arrangement area are arranged along the length direction of the substrate, wherein the element arrangement area is symmetrically arranged as two, the edge of the first laminated plate coincides with the edge of the wiring area or is located inside the wiring area, and the two sides of the second laminated plate are flush with the edge of the first laminated plate or protrude from the first laminated plate.

4. The circuit board structure according to claim 1, characterized by The circuit layer is provided with a power conversion circuit, the first laminated plate is provided with a current limiting circuit, the second laminated plate is provided with a driving circuit, the driving circuit is electrically connected with the driving input end of the power conversion circuit, and the current limiting circuit is connected in series between the driving circuit and the driving input end of the power conversion circuit.

5. The circuit board structure of claim 1, wherein The circuit layer is further provided with a power connection area, the power connection area is arranged on the opposite sides of the circuit layer along the length direction of the circuit layer, and an external power connection hole is arranged in the power connection area.

6. The circuit board structure according to claim 5, characterized by The two element arrangement areas are respectively arranged as a first arrangement area and a second arrangement area, and n MOSFET tubes are symmetrically arranged at equal intervals along the length direction of the first arrangement area and the second arrangement area, the current input end of the MOSFET tube of the first arrangement area is electrically connected with the power connection area on the adjacent side, the current output end of the MOSFET tube is connected with the current input end of the MOSFET tube of the second arrangement area, the current output end of the MOSFET tube of the second arrangement area is electrically connected with the power connection area on the other side, so as to form a power conversion circuit in series.

7. The circuit board structure according to claim 6, characterized in that The first laminated plate is provided with N current limiting areas along the length direction thereof, two groups of current limiting circuits are arranged in each current limiting area, a connecting part is arranged on the side of the second laminated plate corresponding to each current limiting area, the connecting part is electrically connected with the rectifier circuit in the current limiting area in one-to-one mode, the position of the connecting part is opposite to the position of the driving pin of the MOSFET tube device, and the connecting part is welded and fixed with the driving pin.

8. The circuit board structure according to claim 7, characterized by The connecting part is rectangular, and a conductive layer is arranged on the upper surface, the lower surface, the front surface and the side surface close to the MOSFET tube device.