Level detection device and plasma chemical vapor deposition equipment

Abstract

The utility model provides a horizontal detection device applied to plasma chemical vapor deposition equipment and the plasma chemical vapor deposition equipment, the horizontal detection device at least comprises a reaction cavity, a heater, a cooling component and a base, the horizontal detection device comprises at least two groups of light sensors, the optical sensors are used for measuring the distance between the cooling component and the base at the respective position, each group of optical sensors comprises an optical transmitter and an optical receiver which are oppositely arranged, one of the optical transmitter and the optical receiver of each group of optical sensors is arranged on the cooling component, the other one is arranged on the base, the optical transmitter is used for transmitting an optical signal, and the optical receiver is used for receiving the optical signal. The optical receiver receives the optical signal; and the display is electrically connected with the light sensors and is used for displaying the intensity value of the light signal received by each group of light sensors and / or the distance between the cooling component and the base at the position measured by each group of light sensors, and the horizontal condition of the heater is reflected through the intensity value and / or the distance displayed by the display.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically to a horizontal detection device and a plasma chemical vapor deposition (PVD) apparatus. Background Technology

[0002] The integrated circuit industry is the core of the information technology industry, and chemical vapor deposition (CVD) is widely used in large-scale integrated circuits. CVD is a process in which vapors of gaseous or liquid reactants containing the elements constituting the thin film, along with other gases required for the reaction, are introduced into a reaction chamber, where a chemical reaction occurs on the wafer surface to form a thin film. Plasma-enhanced chemical vapor deposition (PECVD) is widely used in CVD processes as a technique for precisely controlling thin film thickness.

[0003] In the PECVD process, the film thickness (THK) is affected by the gap size. The gap size influences the plasma distribution and reactive gas diffusion, thus affecting the film deposition rate and thickness uniformity. After the heater is leveled under atmospheric conditions and the reaction chamber is closed, an automatic gap adjustment system (AGS) is used to perform two adjustments: aligning the heater with the support stage and blindly adjusting the heater based on the film thickness distribution in the film thickness map. These adjustments are used to improve the uniformity of the film thickness on the wafer surface.

[0004] However, the two adjustment operations of adjusting the heater to be parallel to the support platform and blindly adjusting the heater according to the film thickness distribution based on the film thickness map make the adjustment of the heater's horizontal angle uncertain. When the horizontal angle of the heater is adjusted too large, the support pin on one side of the heater will bear a greater mechanical load, resulting in abnormal force, increased lifting resistance, and over time, the support pin may break, or even the product may break, affecting the production efficiency and quality of the product.

[0005] Therefore, improvements are needed to at least partially address the aforementioned problems. Utility Model Content

[0006] The utility model description section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This utility model description section is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0007] To at least partially solve the above problems, this utility model provides a level detection device for a plasma chemical vapor deposition (PVDC) apparatus. The PVDC apparatus includes at least a reaction chamber, a heater, a cooling component, and a base. The heater is disposed within the reaction chamber, and the cooling component is connected to the heater and located outside the reaction chamber, positioned above the base. The level detection device includes: at least two sets of optical sensors for measuring the distance between the cooling component and the base at their respective locations. Each set of optical sensors includes a light emitter and a light receiver arranged opposite each other. One of the light emitter and light receiver in each set of optical sensors is disposed on the cooling component, and the other is disposed on the base. The light emitter emits a light signal, and the light receiver receives the light signal. A display electrically connected to the optical sensors displays the intensity value of the light signal received by each set of optical sensors and / or the distance between the cooling component and the base measured by each set of optical sensors at its location. The intensity value and / or the distance displayed on the display reflect the level of the heater.

[0008] For example, the plasma chemical vapor deposition apparatus further includes a sliding member disposed between the cooling member and the base to adjust the position of the heater.

[0009] For example, the plasma chemical vapor deposition apparatus further includes at least two locking screws, each of which connects the cooling member and the sliding member, and the gap between the cooling member and the sliding member is adjusted by adjusting the locking screws.

[0010] For example, each set of the light sensors is positioned adjacent to one of the locking screws.

[0011] For example, the intensity value of the light signal is used to provide feedback on the distance between the cooling component and the base. When the difference in intensity values ​​at different locations is within a preset range, the heater is in a horizontal state.

[0012] For example, when the heater is horizontally adjusted under atmospheric conditions, the value of the light receiver is zero.

[0013] For example, when the difference in distance between the cooling component and the base at different locations is within a preset distance difference range, it indicates that the heater is in a horizontal state.

[0014] According to another aspect of the present invention, a plasma chemical vapor deposition apparatus is provided, comprising: a reaction chamber; a heater disposed inside the reaction chamber; a bellows connected at one end to the heater; a cooling component connected at the other end of the bellows; and the aforementioned level detection device.

[0015] For example, it also includes a support platform disposed within the reaction chamber and located on the heater.

[0016] For example, the plasma chemical vapor deposition apparatus further includes a plurality of liftable support pins, each of which passes through the heater in a vertical direction.

[0017] The present invention discloses a level detection device for plasma chemical vapor deposition equipment, comprising a display and at least two sets of optical sensors. The display is electrically connected to the optical sensors to display the intensity value of the light signal received by each set of optical sensors. The displayed intensity value of the light signal allows the user to conveniently know the level of the heater, avoiding the situation where the support pin wears and breaks or even the product breaks due to excessive adjustment of the heater's horizontal angle, thereby improving the production efficiency and quality of the product. Attached Figure Description

[0018] The following drawings, which are incorporated herein by reference as part of this invention, are provided for understanding the invention. The drawings illustrate embodiments of the invention and their descriptions, serving to explain the principles of the invention.

[0019] In the attached image:

[0020] Figure 1 A schematic diagram of the structure of a heater according to a specific embodiment of the present invention is shown;

[0021] Figure 2 A schematic diagram of the horizontal detection device of a plasma chemical vapor deposition apparatus according to a specific embodiment of the present invention is shown. Detailed Implementation

[0022] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described in order to avoid confusion with the present invention.

[0023] It should be understood that this invention can be embodied in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this invention to those skilled in the art. In the drawings, for clarity, the dimensions of layers and regions, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0024] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this utility model, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion.

[0025] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below” or “under” the other element or feature will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0026] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the invention. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0027] During the PECVD process, the film thickness (THK) on the wafer surface is affected by the gap size. The gap size influences the plasma distribution and reactive gas diffusion, thus affecting the film deposition rate and thickness uniformity. After the heater is leveled under atmospheric conditions and the reaction chamber is closed, two adjustment operations are required: adjusting the heater to be parallel to the support stage and blindly adjusting the heater based on the film thickness distribution in the film thickness map. These adjustments are used to improve the uniformity of the film thickness on the wafer surface.

[0028] In related technologies, the heater is equipped with multiple support pins to lift and lower the wafer. However, two adjustment operations—adjusting the heater to be parallel to the support stage and blindly adjusting the heater based on the film thickness distribution in the film thickness map—involve uncertainty in the horizontal angle of the heater. When the heater angle is adjusted too large, one side of the pin on the heater will bear a greater mechanical load, resulting in abnormal stress, increased lifting resistance, and increased friction between the lifting pin on that side and the ceramic bushing. Prolonged friction can lead to pin wear and breakage, and even the risk of product breakage, affecting production efficiency and quality.

[0029] To address at least one of the aforementioned technical problems, this application provides a level detection device for a plasma chemical vapor deposition (PVDC) apparatus. The PVDC apparatus includes at least a reaction chamber, a heater, a cooling component, and a base. At least a portion of the heater is disposed within the reaction chamber, and the cooling component is connected to the heater and located outside the reaction chamber, positioned above the base. The detection device includes: at least two sets of optical sensors for measuring the distance between the cooling component and the base at their respective locations. Each set of optical sensors includes a light emitter and a light receiver arranged opposite each other, wherein one of the light emitter and the light receiver of each set of optical sensors is disposed on the cooling component, and the other is disposed on the base. The light emitter emits a light signal, and the light receiver receives the light signal. A display electrically connected to the optical sensors displays the intensity value of the light signal received by each set of optical sensors and / or the distance between the cooling component and the base at the location measured by each set of optical sensors. The intensity value and / or the distance displayed on the display reflect the level of the heater.

[0030] The horizontal detection device for plasma chemical vapor deposition equipment according to this application includes a display and at least two sets of optical sensors. The display is electrically connected to the optical sensors to display the intensity value of the light signal received by each set of optical sensors and / or the distance between the cooling component and the base at the location measured by each set of optical sensors. The displayed intensity value of the light signal and / or distance allows the user to conveniently know the horizontal status of the heater, avoiding the situation where the support pin wears and breaks or even the product breaks due to excessive horizontal angle adjustment of the heater, thereby improving the production efficiency and quality of the product.

[0031] To fully understand this application, a detailed structure will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0032] The following is for reference. Figure 1 and Figure 2 A horizontal detection device applied to a plasma chemical vapor deposition apparatus according to an embodiment of this application is described, such as... Figure 1 and Figure 2 As shown, the plasma chemical vapor deposition apparatus includes at least a reaction chamber 101, a heater 102, a cooling component 103, and a base 104. At least a portion of the heater 102 is disposed within the reaction chamber 101. The cooling component 103 is connected to the heater 102 and located outside the reaction chamber 101, and is positioned above the base 104. The horizontal detection device includes at least two sets of optical sensors 110 for measuring the distance between the cooling component 103 and the base 104 at their respective locations. Each set of optical sensors 110 includes a light emitter 1101 and a light receiver 1102 disposed opposite to each other. In each group of light sensors 110, one of the light emitter 1101 and the light receiver 1102 is disposed on the cooling member 103, and the other is disposed on the base 104. The light emitter 1101 is used to emit light signals, and the light receiver 1102 is used to receive light signals. The display is electrically connected to the light sensors 110 and is used to display the intensity value of the light signal received by each group of light sensors 110 and / or the distance between the cooling member 103 and the base 104 at the location measured by each group of light sensors 110. The intensity value and / or distance displayed on the display reflect the level of the heater 102.

[0033] In this embodiment, the level detection device includes at least two sets of optical sensors 110 and a display. Each set of optical sensors 110 includes a light emitter 1101 and a light receiver 1102 arranged opposite to each other. The light emitter 1101 and the light receiver 1102 are disposed on the cooling member 103 and the base 104, and the display is electrically connected to the optical sensors 110. By transmitting and receiving light signals, the display shows the intensity value of the light signal received by each set of optical sensors 110. The intensity value of the light signal is used to provide feedback on the distance between the cooling member 103 and the base 104. The at least two sets of optical sensors 110 can also be used to measure the distance between the cooling member 103 and the base 104 at different positions. Since the cooling member 103 is connected to the heater 102, the distance between the cooling member 103 and the base 104 can reflect the level of the heater 102. Therefore, by comparing the intensity value or distance of the light signal received by each set of optical sensors 110 displayed on the display, the level of the heater 102 can be determined intuitively and conveniently.

[0034] Since multiple support pins 107 penetrate the heater 102 vertically to lift and lower the wafer 100, bushings, such as ceramic bushings, are typically fitted around the support pins 107. When the angle of the heater 102 is adjusted too far, the support pin 107 on one side of the heater 102 will bear a greater mechanical load, resulting in greater friction between it and the bushing. Prolonged friction can cause the support pin 107 to wear and break, and even lead to the scrapping of the wafer 100. The horizontal detection device of this application can intuitively and conveniently detect the horizontal status of the heater 102 by displaying the intensity value of the light signal on the monitor. This can effectively avoid the situation where the support pin 107 breaks due to excessive horizontal angle adjustment of the heater 102, ultimately leading to the scrapping of the wafer 100 or causing the entire machine to crash for inspection. When the machine process requirements are higher, the number of times the heater 102 is blindly adjusted according to the film thickness distribution of the thin film thickness map will increase. Using the horizontal detection device of this application, the heater 102 can be quickly adjusted to a suitable horizontal position to meet the process requirements, thereby improving production efficiency and product quality.

[0035] In some examples, the display can be any display device with a screen, such as a stand-alone screen or a computer device with a screen.

[0036] In some embodiments, the optical sensor 110 includes a light emitter 1101 and a light receiver 1102 disposed opposite to each other. One of the light emitter 1101 and the light receiver 1102 is disposed on a cooling member 103, and the other is disposed on a base 104. The light emitter 1101 is used to emit light signals, and the light receiver 1102 is used to receive light signals. Specifically, the light emitter 1101 can convert electrical signals into optical signals. It receives electrical signals from a data source (such as a computer, router, or other device) and converts the electrical signals into light signals of a specific wavelength through an internal light-emitting element (typically a laser diode or a light-emitting diode). The light receiver 1102 can convert optical signals into electrical signals. It receives the optical signals from the light emitter 1101 and converts the optical signals into electrical signals through a photosensitive element (such as a photodiode).

[0037] In one example, a light transmitter 1101 is disposed on a base 104, and a light receiver 1102 is disposed on a cooling member 103. The light transmitter 1101 and the light receiver 1102 are arranged opposite each other (to ensure that the light receiver can receive the light signal emitted by the light transmitter). The light transmitter 1101 on the base 104 emits a light signal to the cooling member 103, and the light receiver 1102 on the cooling member 103 receives the light signal emitted by the light transmitter 1101 and converts it into an electrical signal to obtain a corresponding intensity value. This intensity value is used to provide feedback on the distance between the cooling member 103 and the base 104. Since at least two sets of optical sensors 110 are respectively set at different positions, when the intensity values ​​of the optical signals received by the optical receivers 1102 at different positions are basically the same (for example, ideally they are the same, but it is not ruled out that the intensity values ​​of the optical signals at different positions may be different due to measurement errors, but if the difference between the intensity values ​​of the optical signals at different positions is within the preset difference range, it also indicates that the heater 102 is in a horizontal state), it indicates that the distance between the cooling component 103 and the base 104 at different positions is also basically the same, and the heater 102 is in a horizontal state. However, if the intensity values ​​of the optical signals received by the optical receivers 1102 at different positions are different and the difference exceeds the preset difference range, it indicates that the distance between the cooling component 103 and the base 104 at different positions is significantly different, and the heater 102 is not in a horizontal state.

[0038] It is worth mentioning that the intensity of the light signal emitted by the light transmitter 1101 of each group of light sensors 110 is basically the same. When the distance between each group of light transmitters 1101 and light receivers 1102 is basically the same, then the intensity of the light signal received by each light receiver 1102 should also be basically the same.

[0039] Similarly, at least two sets of optical sensors 110 are used to measure the distance between the cooling component 103 and the base 104 at their respective locations. Since at least two sets of optical sensors 110 are set at different locations, when the distance between the cooling component 103 and the base 104 measured by the optical sensors 110 at different locations is basically the same (for example, ideally the distance is the same, but it is possible that the distances at different locations may be different due to measurement errors, but if the difference between the distances at different locations is within the preset distance difference range, it also indicates that the heater 102 is in a horizontal state), the heater 102 is in a horizontal state. However, if the distance between the cooling component 103 and the base 104 at different locations is different and the difference is large, for example, exceeding the preset distance difference range, it indicates that the heater 102 is not in a horizontal state.

[0040] In another example, a light emitter 1101 is disposed on a cooling member 103, and a light receiver 1102 is disposed on a base 104, with the light emitter 1101 and light receiver 1102 positioned opposite each other. The light emitter 1101 on the cooling member 103 emits a light signal to the base 104, and the light receiver 1102 on the base 104 receives the light signal emitted by the light emitter 1101 and converts it into an electrical signal to obtain a corresponding intensity value. This intensity value is used to indicate the distance between the cooling member 103 and the base 104. In this embodiment, as... Figure 2 As shown, the light transmitter 1101 is disposed on the base 104, and the light receiver 1102 is disposed on the cooling member 103.

[0041] The optical transmitter 1101 and optical receiver 1102 can be fiber optic signal transmitters and fiber optic signal receivers. It is understood that, in addition to using fiber optic signal transmitters and fiber optic signal receivers to detect the intensity of optical signals, any other suitable type of optical sensor 110 can also be used to detect the intensity of optical signals; there is no limitation on this.

[0042] In some embodiments, such as Figure 2As shown, the plasma chemical vapor deposition apparatus also includes a sliding member 105, which is disposed between the cooling member 103 and the base 104 to adjust the position of the heater 102. Exemplarily, the cooling member 103 is connected to the heater 102 and located outside the reaction chamber 101, above the base 104. The cooling member 103 can be a water-cooled block to absorb heat from the heater 102 and prevent overheating. The base 104 is used to fix and raise the heater 102. The sliding member 105 is disposed between the cooling member 103 and the base 104 to adjust the horizontal position of the heater 102. Exemplarily, the sliding member 105 can be, but is not limited to, a slider, a slide rail, or a groove.

[0043] In some embodiments, the plasma chemical vapor deposition apparatus further includes at least two locking screws (not shown in the figure), each locking screw connecting the cooling member 103 and the sliding member 105. Adjusting the locking screws adjusts the gap between the cooling member 103 and the sliding member 105, thereby adjusting the position of the heater 102 in the vertical direction. Each set of photosensors 110 is disposed adjacent to one locking screw. Specifically, the display is electrically connected to the photosensors 110. When the intensity values ​​of the light signals received by the multiple sets of photosensors 110 displayed on the display are different and have large differences, it indicates that the heater 102 is not in a horizontal state. Then, by loosening at least one locking screw, the cooling member 103 can be moved vertically relative to the sliding member 105, thereby adjusting the gap between the cooling member 103 and the sliding member 105, ultimately bringing the heater 102 into a horizontal state. At this point, the intensity values ​​of the light signals received by the multiple sets of photosensors 110 are approximately the same or the differences are within a predetermined range. By ensuring that the heater 102 is in a horizontal state, edge overlap of the wafer 100 can be avoided, as well as abnormal support plate conditions, improving product quality and work efficiency. The corresponding locking screws can also be adjusted in a targeted manner according to the intensity value of the light signal and / or the distance between the cooling component 103 and the base 104 at the location measured by each group of light sensors 110. For example, for the locking screw at the location with a larger intensity value, the locking screw can be adjusted to reduce the distance between the cooling component 103 and the base 104 at this location. Or, for the locking screw at the location with a smaller intensity value, the locking screw can be adjusted to increase the distance between the cooling component 103 and the base 104 at this location. Ultimately, the heater 102 is in a horizontal state. At this time, the intensity values ​​of the light signals received by the multiple groups of light sensors 110 are approximately the same or the difference is within a predetermined range.

[0044] In some embodiments, after the heater 102 has been leveled in atmospheric conditions, the value of the light receiver 1102 is zero. Specifically, after the heater 102 has been initially leveled in atmospheric conditions using a leveling tool, the value of the light receiver 1102 is corrected to zero for reference to ensure the accuracy and consistency of subsequent measurements.

[0045] In some embodiments, the heater 102 is in a horizontal state when the difference in intensity values ​​of the light signals detected by the light sensors 110 at different locations is within a preset difference range. For example, at least two sets of light sensors 110 are provided. Each light sensor 110 includes a light emitter 1101 and a light receiver 1102 disposed opposite to each other. Different sets of light emitters 1101 and light receivers 1102 are disposed at different locations on the cooling member 103 and the base 104. A display is connected to each set of light sensors 110, and the display shows the intensity values ​​of the light signals at different locations. The difference in intensity values ​​of the light signals at different locations is then used to determine whether it is within a preset difference range, thereby determining the horizontal state of the heater 102.

[0046] In this embodiment, three sets of light sensors 110 can be provided. Each set of light sensors 110 includes a light emitter 1101 and a light receiver 1102 arranged opposite to each other and located on the cooling member 103 and the base 104. Specifically, the first set of light emitters 1101 and light receivers 1102 is located at a first position on the cooling member 103 and the base 104 and is arranged opposite to each other; the second set of light emitters 1101 and light receivers 1102 is located at a second position on the cooling member 103 and the base 104 and is arranged opposite to each other; the third set of light emitters 1101 and light receivers 1102 is located at a third position on the cooling member 103 and the base 104 and is arranged opposite to each other. A display is connected to each set of light sensors 110 and displays the first set of light sensors 110, the second set of light sensors 110, and the third set of light sensors 110. The light sensor 110 receives the intensity value of the light signal; then, it calculates the difference between the intensity values ​​of each light signal and determines whether the difference is within a preset range. If the difference is within the preset range, it indicates that the heater 102 is in a horizontal state. If the difference is outside the preset range, the gap between the cooling component 103 and the base 104 can be adjusted by tightening the locking screws to bring the difference within the preset range, ensuring that the heater 102 is in a horizontal state. This horizontal detection device can quickly adjust the heater 102 to a horizontal state, and its data parameters can also be checked to confirm the status of the heater 102. If any abnormality is found, the heater can be opened for inspection in a timely manner.

[0047] In some embodiments, the difference between the intensity values ​​of the light signals received by the light receivers 1102 of the light sensor 110 at different locations is within a preset difference range. The distance deviation range corresponding to this preset difference range (i.e., the distance deviation range between the cooling member 103 and the base 104) is 0mm-2mm, for example, 0.5mm, 1mm, 1.2mm, 1.3mm, 1.5mm, 1.6mm, 1.8mm, or 2mm, and is not specifically limited thereto. It is worth mentioning that when the difference in the distance between the cooling member 103 and the base 104 at different locations is within a preset distance difference range, it indicates that the heater 102 is in a horizontal state. This preset distance difference range can be 0mm-2mm, or other suitable ranges, and is not specifically limited here.

[0048] In summary, the horizontal detection device for plasma chemical vapor deposition equipment according to the embodiments of this application includes a display and at least two sets of optical sensors. The display is electrically connected to the optical sensors to display the intensity value of the light signal received by each set of optical sensors. The user can conveniently know the horizontal status of the heater by the displayed intensity value of the light signal and / or the distance between the cooling member 103 and the base 104, avoiding the situation where the support pin wears and breaks or even the product breaks due to excessive horizontal angle adjustment of the heater, thus improving the production efficiency and quality of the product.

[0049] This application also provides a plasma chemical vapor deposition apparatus, such as... Figure 2 As shown, it includes a reaction chamber 101; a heater 102, at least a portion of which is disposed inside the reaction chamber 101; a bellows 106, one end of which is connected to the heater 102; a cooling component 103, which is connected to the other end of the bellows 106; and the aforementioned level detection device.

[0050] In one example, the heater 102 may include a heating element 1021 and a support member 1022 for supporting the heating element 1021. One end of the support member 1022 is connected to the heating element 1021, and the other end is connected to the cooling member 103. A portion of the support member 1022 passes through the bellows 106. The heating element 1021 is located inside the reaction chamber 101, while a portion of the support member 1022 is located outside the reaction chamber 101. Optionally, the heating element 1021 may be a flat plate or other suitable shape.

[0051] In some embodiments, the plasma chemical vapor deposition apparatus further includes a support stage (not shown) disposed within the reaction chamber 101 and located on the heater 102, the support stage serving to support the wafer. Exemplarily, the bottom surface shape of the support stage matches the top surface of the heater 102 to ensure sufficient contact and transfer of heat from the heater 102 through the support stage.

[0052] In some embodiments, such as Figure 1 As shown, the plasma chemical vapor deposition apparatus also includes multiple liftable support pins 107, each of which passes vertically through the heater 102. Specifically, the heater 102 has multiple through holes, the number of which matches the number of support pins 107. A bracket is provided below the heater 102, and a drive device is connected to the bracket. One end of each support pin 107 is connected to the bracket, and the other end passes through the through hole in the heater 102. The support pin 107 is lifted by the drive device, which in turn lifts the bracket.

[0053] In some embodiments, the plasma chemical vapor deposition apparatus includes a plasma-enhanced chemical vapor deposition apparatus.

[0054] According to an embodiment of this application, a plasma chemical vapor deposition apparatus includes a display and at least two sets of light sensors. The display is electrically connected to the light sensors to display the intensity value of the light signal received by each set of light sensors. The displayed intensity value of the light signal allows the user to conveniently know the level of the heater, avoiding the situation where the support pin wears and breaks or even the product breaks due to excessive adjustment of the heater's horizontal angle, thereby improving the production efficiency and quality of the product.

[0055] Although exemplary embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above exemplary embodiments are merely illustrative and are not intended to limit the scope of this application. Various changes and modifications can be made therein by those skilled in the art without departing from the scope and spirit of this application. All such changes and modifications are intended to be included within the scope of this application as claimed in the appended claims.

[0056] Similarly, it should be understood that, in order to simplify this application and aid in understanding one or more aspects of the application, various features of this application may sometimes be grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of this application. However, this approach should not be construed as reflecting an intention that the claimed application requires more features than are expressly recited in each claim. Rather, as reflected in the corresponding claims, the point of application is that the corresponding technical problem can be solved with fewer features than all of a single disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of this application.

[0057] Furthermore, those skilled in the art will understand that although some embodiments described herein include certain features but not others included in other embodiments, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

[0058] It should be noted that the above embodiments are illustrative of this application and not limiting of it, and that those skilled in the art can devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses should not be construed as limiting the claims. The use of the words first, second, and third, etc., does not indicate any order. These words can be interpreted as names.

Claims

1. A level detection device for use in a plasma chemical vapor deposition apparatus, characterized by, The plasma chemical vapor deposition device comprises at least a reaction cavity, a heater, a cooling member, a base, at least part of the heater is arranged in the reaction cavity, the cooling member is connected to the heater and located outside the reaction cavity, the cooling member is arranged above the base, and the horizontal detection device comprises: at least two groups of light sensors for measuring the distance between the cooling member and the base at their respective positions, each group of light sensors comprises oppositely arranged light emitters and light receivers, one of the light emitters and the light receivers of each group of light sensors is arranged on the cooling member, and the other is arranged on the base, the light emitters are used for emitting light signals, and the light receivers receive the light signals; a display electrically connected to the light sensors for displaying the intensity value of the light signal received by each group of light sensors and / or the distance between the cooling member and the base at the position of each group of light sensors, and the intensity value and / or the distance displayed by the display reflect the horizontal state of the heater.

2. The level detection apparatus of claim 1, wherein The plasma chemical vapor deposition device further comprises a sliding member arranged between the cooling member and the base to adjust the position of the heater.

3. The level detection apparatus of claim 2, wherein The plasma chemical vapor deposition device further comprises at least two locking screws, each of which connects the cooling member and the sliding member, and the gap between the cooling member and the sliding member is adjusted by adjusting the locking screws.

4. The level detection apparatus of claim 3, wherein Each group of light sensors is arranged adjacent to one of the locking screws.

5. The level detection apparatus of claim 1, wherein The intensity value of the light signal is used to feedback the distance between the cooling member and the base, and when the difference between the intensity values at different positions is within a preset difference range, the heater is in a horizontal state.

6. The level detection apparatus of claim 1, wherein When the horizontal adjustment of the heater is completed in the atmospheric state, the value of the light receiver is zero.

7. The level detection apparatus of claim 1, wherein When the difference between the distances between the cooling member and the base at different positions is within a preset distance difference range, it is indicated that the heater is in a horizontal state.

8. A plasma chemical vapor deposition apparatus characterized by comprising: comprises: a reaction cavity; a heater arranged inside the reaction cavity; a bellows, one end of the bellows is connected to the heater; a cooling member connected to the other end of the bellows; the horizontal detection device of any one of claims 1-7.

9. The plasma chemical vapor deposition apparatus of claim 8, wherein, Further comprising a support table arranged in the reaction cavity and located on the heater.

10. The plasma chemical vapor deposition apparatus of any one of claims 8-9, wherein, The plasma chemical vapor deposition device further comprises a plurality of liftable support pins, each of which penetrates the heater in the vertical direction.

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