Piezoresistive chip and pressure sensor

Abstract

The piezoresistive chip comprises a substrate, a resistor lead and an extraction electrode, the substrate is provided with a supporting part, the supporting part comprises a first supporting part and a second supporting part, the width of the extraction electrode is larger than that of the first supporting part and smaller than that of the second supporting part, the first supporting part is only provided with the resistor lead, and the second supporting part is provided with the extraction electrode. According to the pressure sensor, the resistance leads and the extraction electrodes are arranged in a partitioned manner, so that the area occupied by the resistance leads can be reduced, the size of the piezoresistive chip is reduced, and the cost of the pressure sensor is reduced. The utility model further provides a pressure sensor comprising the piezoresistive chip.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of micro-electro-mechanical systems, and in particular, to a piezoresistive chip and a pressure sensor. BACKGROUND

[0002] A pressure sensor is a device capable of converting a pressure signal into an electrical signal. A piezoresistive chip is the core device of a pressure sensor, which can convert a medium pressure signal into an electrical signal.

[0003] The main factor restricting the cost of a pressure sensor is the cost of a piezoresistive chip, and the main factor restricting the cost of a piezoresistive chip is the volume of the piezoresistive chip. Currently, the volume of a piezoresistive chip is relatively large, resulting in a high cost of a pressure sensor.

[0004] It should be noted that the information disclosed in the above background section is only used to strengthen the understanding of the background of the present disclosure, and therefore can include information that does not constitute prior art known to those of ordinary skill in the art. SUMMARY

[0005] The purpose of the present disclosure is to overcome the problem that the volume of a piezoresistive chip is relatively large, resulting in a high cost of a pressure sensor, and to provide a piezoresistive chip and a pressure sensor.

[0006] According to one aspect of the present disclosure, a piezoresistive chip is provided, which includes a substrate, a piezoresistor, a resistance lead, and an electrode, the substrate has a pressure sensing portion and a support portion, the thickness of the substrate at the pressure sensing portion is less than the thickness of the substrate at the support portion, the support portion is arranged at the periphery of the pressure sensing portion to form a pressure sensing cavity, the piezoresistor is arranged on one side of the pressure sensing portion away from the pressure sensing cavity, the two ends of the resistance lead are respectively connected to one piezoresistor, the electrode is connected to the resistance lead, the support portion includes a first support portion and a second support portion, the width of the electrode is greater than the width of the first support portion and less than the width of the second support portion, the first support portion is provided only with the resistance lead, and the second support portion is provided with the electrode.

[0007] In one embodiment of the present disclosure, the pressure-sensitive resistor comprises a first pressure-sensitive resistor, a second pressure-sensitive resistor, a third pressure-sensitive resistor, and a fourth pressure-sensitive resistor, the first pressure-sensitive resistor and the third pressure-sensitive resistor are oppositely arranged along a first direction, the second pressure-sensitive resistor and the fourth pressure-sensitive resistor are oppositely arranged along a second direction, the resistor leads comprise a first resistor lead, a second resistor lead, a third resistor lead, and a fourth resistor lead, two ends of the first resistor lead are connected to the first pressure-sensitive resistor and the second pressure-sensitive resistor, two ends of the second resistor lead are connected to the second pressure-sensitive resistor and the third pressure-sensitive resistor, two ends of the third resistor lead are connected to the third pressure-sensitive resistor and the fourth pressure-sensitive resistor, and two ends of the fourth resistor lead are connected to the fourth pressure-sensitive resistor and the first pressure-sensitive resistor, the lead-out electrodes comprise a first lead-out electrode, a second lead-out electrode, a third lead-out electrode, and a fourth lead-out electrode, the first lead-out electrode is connected to the first resistor lead, the second lead-out electrode is connected to the second resistor lead, the third lead-out electrode is connected to the third resistor lead, and the fourth lead-out electrode is connected to the fourth resistor lead, the fourth lead-out electrode serves as a positive terminal of a power signal, the second lead-out electrode serves as a negative terminal of the power signal, the first lead-out electrode serves as a positive terminal of an output signal, and the third lead-out electrode serves as a negative terminal of the output signal.

[0008] In one embodiment of the present disclosure, the first support portion and the second support portion are both located between the edge of the pressure-sensing portion and the edge of the base.

[0009] In one embodiment of the present disclosure, the pressure-sensing portion is rectangular in shape, and the second support portion comprises two sub-second support portions, the two sub-second support portions are located on opposite sides of the pressure-sensing portion, two of the lead-out electrodes are arranged on one of the sub-second support portions, and the other two lead-out electrodes are arranged on the other sub-second support portion.

[0010] In one embodiment of the present disclosure, the four resistor leads each comprise a first lead segment, a second lead segment, and a third lead segment, the first lead segment and the third lead segment extend along a first direction, one end of the first lead segment and one end of the third lead segment are connected to two adjacent pressure-sensitive resistors on the outer contour of the pressure-sensing portion, the second lead segment extends along a second direction, and the other end of the second lead segment is connected to the other end of the first lead segment and the other end of the third lead segment, the first lead segment is arranged on the first support portion, the second lead segment and the third lead segment are arranged on the second support portion, and the four lead-out electrodes are connected to the second lead segments of the four resistor leads.

[0011] In one embodiment of the present disclosure, the pressure-sensing portion is rectangular in shape, the second support portion is located on one side of the pressure-sensing portion, and the four lead-out electrodes are all arranged on the second support portion.

[0012] In one embodiment of the present disclosure, the second lead-out electrode and the third lead-out electrode are arranged adjacently, the first lead-out electrode is located on the side of the second lead-out electrode away from the third lead-out electrode, the fourth lead-out electrode is located on the side of the third lead-out electrode away from the second lead-out electrode, the first resistance lead line comprises a first extension segment, the first extension segment is located on the side of the second resistance lead line away from the pressure sensing part along the second direction, the first extension segment is connected with the first lead-out electrode, and the fourth resistance lead line comprises a second extension segment, the second extension segment is located on the side of the third resistance lead line away from the pressure sensing part along the second direction, and the second extension segment is connected with the fourth lead-out electrode.

[0013] In one embodiment of the present disclosure, the pressure sensing part is in a rectangular shape, the second support part comprises three sub-second support parts, and the three sub-second support parts are respectively located between three edges of the pressure sensing part and corresponding three edges of the base, wherein two lead-out electrodes are located in one sub-second support part, and the other two lead-out electrodes are respectively located in the other two sub-second support parts.

[0014] In one embodiment of the present disclosure, the pressure sensing part is in a polygonal shape, four corners of the polygonal shape are respectively provided with a notch part, the second support part comprises four sub-second support parts, the four sub-second support parts are respectively arranged in the four notch parts, and the four lead-out electrodes are respectively arranged in the four sub-second support parts.

[0015] In one embodiment of the present disclosure, the four resistance lead lines comprise a first lead line segment and a second lead line segment, the first lead line segment extends along the first direction, the second lead line segment extends along the second direction, one end of the first lead line segment and the second lead line segment is connected with the same lead-out electrode, and the other end is respectively connected to two adjacent pressure sensitive resistors on the outer contour of the pressure sensing part.

[0016] In one embodiment of the present disclosure, the extension direction of the edge of the pressure sensing part intersects with the extension direction of the edge of the base, the edge of the base and the edge of the pressure sensing part form a support part, the first support part comprises four sub-first support parts, the second support part comprises four sub-second support parts, the sub-first support parts and the sub-second support parts are arranged at intervals, and the four lead-out electrodes are arranged in the four sub-second support parts.

[0017] In one embodiment of the present disclosure, the four resistance lead lines each comprise a first lead line segment, a second lead line segment and a third lead line segment, the first lead line segment extends along the first direction, the second lead line segment extends along the second direction, the third lead line segment is arranged on the side of the second lead line segment away from the pressure sensing part, the third lead line segment extends away from the pressure sensing part, and the four lead-out electrodes are connected with the respective third lead line segments of the four resistance lead lines.

[0018] In one embodiment of the present disclosure, the first support part is located between the edge of the pressure sensing part and the edge of the base, the orthographic projection of the second support part on the base is located within the orthographic projection of the pressure sensing part on the base, and the four lead-out electrodes are each arranged in the second support part.

[0019] In one embodiment of the present disclosure, the pressure sensing portion and the second support portion are both rectangular, and the center of the orthographic projection of the second support portion on the substrate coincides with the center of the pressure sensing portion.

[0020] In one embodiment of the present disclosure, the resistance lead includes a first lead segment, a second lead segment and a third lead segment, the first lead segment extends in a first direction, the second lead segment extends in a second direction, one end of the first lead segment is connected with one end of the second lead segment, the other end of the first lead segment and the other end of the second lead segment are respectively connected with two adjacent piezoresistors on the outer contour of the pressure sensing portion, one end of the third lead segment is connected with the connection of the first lead segment and the second lead segment, the third lead segment extends along the diagonal connecting line of the pressure sensing portion and the second support portion, and the other end of the third lead segment is connected with the lead-out electrode.

[0021] In one embodiment of the present disclosure, the piezoresistor chip further includes a carrier portion, the carrier portion is arranged at the end of the first support portion away from the piezoresistor, and the carrier portion extends towards the pressure sensing portion.

[0022] In one embodiment of the present disclosure, the material of the carrier portion is different from that of the support portion.

[0023] According to another aspect of the present disclosure, a piezoresistor chip is provided.

[0024] The piezoresistor chip of the present disclosure includes a substrate, a resistance lead and a lead-out electrode, the substrate has a support portion, the support portion includes a first support portion and a second support portion, the width of the lead-out electrode is greater than that of the first support portion and less than that of the second support portion, the first support portion is provided with only the resistance lead, and the second support portion is provided with the lead-out electrode. By arranging the resistance lead and the lead-out electrode in different zones, the area occupied by the resistance lead can be reduced, thereby reducing the volume of the piezoresistor chip and the cost of the piezoresistor sensor.

[0025] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. BRIEF DESCRIPTION OF DRAWINGS

[0026] The drawings herein are incorporated into the description and form part of the description, show embodiments consistent with the present disclosure, and together with the description serve to explain the principles of the present disclosure. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative labor.

[0027] Figure 1 The structural schematic diagram of the piezoresistor sensor related to the embodiments of the present disclosure.

[0028] Figure 2 A circuit schematic diagram of the Wheatstone bridge involved in the embodiments of the present disclosure.

[0029] Figure 3 A plan view of the piezoresistive chip involved in the embodiments of the present disclosure, when the lead-out electrodes are arranged on the lines connecting the four corners of the substrate and the four corners of the pressure sensing part.

[0030] Figure 4 A cross-sectional view of the piezoresistive chip involved in the embodiments of the present disclosure, when the lead-out electrodes are arranged on the lines connecting the four corners of the substrate and the four corners of the pressure sensing part.

[0031] Figure 5 A cross-sectional view of the piezoresistive chip involved in the embodiments of the present disclosure, when the two sub-first support parts are located on the opposite sides of the pressure sensing part along the second direction.

[0032] Figure 6 A cross-sectional view of the piezoresistive chip involved in the embodiments of the present disclosure, when the two sub-first support parts are located on the opposite sides of the pressure sensing part along the second direction, and the carrier part is not arranged.

[0033] Figure 7 A cross-sectional view of the piezoresistive chip involved in the embodiments of the present disclosure, when the two sub-first support parts are located on the opposite sides of the pressure sensing part along the second direction, and the carrier part is arranged at the end of the support part away from the pressure sensing part.

[0034] Figure 8 A plan view of the piezoresistive chip involved in the embodiments of the present disclosure, when the second support part is arranged on the other side of the pressure sensing part along the first direction, and the four lead-out electrodes are arranged on the second support part.

[0035] Figure 9 Another plan view of the piezoresistive chip involved in the embodiments of the present disclosure, when the second support part is arranged on the other side of the pressure sensing part along the first direction, and the four lead-out electrodes are arranged on the second support part.

[0036] Figure 10 A plan view of the piezoresistive chip involved in the embodiments of the present disclosure, when the second support part includes three sub-second support parts, two lead-out electrodes are arranged on one sub-second support part, and the other two lead-out electrodes are arranged on the other two sub-second support parts.

[0037] Figure 11 A plan view of the piezoresistive chip involved in the embodiments of the present disclosure, when the four corners of the pressure sensing part are respectively provided with notch parts, and the four sub-second support parts are arranged in the four notch parts.

[0038] Figure 12 Another plan view of the piezoresistive chip involved in the embodiments of the present disclosure, when the four corners of the pressure sensing part are respectively provided with notch parts, and the four sub-second support parts are arranged in the four notch parts.

[0039] Figure 13 A B-B sectional view of the schematic diagram of Figure 11

[0040] Figure 14 A C-C sectional view of the schematic diagram of Figure 13

[0041] A plan view of a piezoresistive chip when the edge of the pressure sensing portion intersects the edge of the substrate. Figure 15

[0042] Another plan view of a piezoresistive chip when the edge of the pressure sensing portion intersects the edge of the substrate. Figure 16

[0043] A sectional view of a piezoresistive chip along a diagonal line of the substrate when the edge of the pressure sensing portion intersects the edge of the substrate. Figure 17

[0044] A plan view of a piezoresistive chip when the first support portion is between the edge of the pressure sensing portion and the edge of the substrate, and the orthographic projection of the second support portion on the substrate is within the orthographic projection of the pressure sensing portion on the substrate. Figure 18

[0045] Another plan view of a piezoresistive chip when the first support portion is between the edge of the pressure sensing portion and the edge of the substrate, and the orthographic projection of the second support portion on the substrate is within the orthographic projection of the pressure sensing portion on the substrate. Figure 19

[0046] A sectional view of a piezoresistive chip when the first support portion is between the edge of the pressure sensing portion and the edge of the substrate, and the orthographic projection of the second support portion on the substrate is within the orthographic projection of the pressure sensing portion on the substrate. Figure 20

[0047] A sectional view of a piezoresistive chip when the first support portion is between the edge of the pressure sensing portion and the edge of the substrate, and the orthographic projection of the second support portion on the substrate is within the orthographic projection of the pressure sensing portion on the substrate. Figure 21

[0048] A sectional view of a piezoresistive chip when the first support portion is between the edge of the pressure sensing portion and the edge of the substrate, and the orthographic projection of the second support portion on the substrate is within the orthographic projection of the pressure sensing portion on the substrate. Figure 22

[0049] A sectional view of a piezoresistive chip when the first support portion is between the edge of the pressure sensing portion and the edge of the substrate, and the orthographic projection of the second support portion on the substrate is within the orthographic projection of the pressure sensing portion on the substrate. Figure 23

[0050] A sectional view of a piezoresistive chip when the first support portion is between the edge of the pressure sensing portion and the edge of the substrate, and the orthographic projection of the second support portion on the substrate is within the orthographic projection of the pressure sensing portion on the substrate. Figure 24

[0051] A sectional view of a piezoresistive chip when the first support portion is between the edge of the pressure sensing portion and the edge of the substrate, and the orthographic projection of the second support portion on the substrate is within the orthographic projection of the pressure sensing portion on the substrate. Figure 25 ​A cross-sectional view of the anode bonding of the support portion and the carrier portion of the substrate according to an embodiment of the present disclosure.

[0052] Figure 26 A cross-sectional view of the preparation of the lead-out electrode on the side of the resistance lead away from the substrate according to an embodiment of the present disclosure.

[0053] In the figure: 1 - substrate, 11 - pressure sensing portion, 111 - notch portion, 12 - support portion, 121 - first support portion, 1211 - sub-first support portion, 122 - second support portion, 1221 - sub-second support portion, 13 - pressure sensing cavity, R - pressure sensitive resistor, R1 - first pressure sensitive resistor, R2 - second pressure sensitive resistor, R3 - third pressure sensitive resistor, R4 - fourth pressure sensitive resistor, 3 - resistance lead, 31 - first resistance lead, 32 - second resistance lead, 33 - third resistance lead, 34 - fourth resistance lead, 301 - first lead segment, 302 - second lead segment, 303 - third lead segment, 304 - first extension segment, 305 - second extension segment, 306 - third extension segment, 307 - fourth extension segment, 4 - lead-out electrode, 41 - first lead-out electrode, 42 - second lead-out electrode, 43 - third lead-out electrode, 44 - fourth lead-out electrode, 5 - carrier portion, 100 - housing, 200 - pressure resistor chip, 300 - adhesive, 400 - circuit board. DETAILED DESCRIPTION

[0054] Example implementations will now be described more fully with reference to the accompanying drawings. Example implementations may, however, be implemented in many different forms and should not be construed as limited to the implementations set forth herein; rather, these implementations are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example implementations to those skilled in the art. Like reference numerals refer to like elements throughout the figures, and thus a detailed description of them will not be repeated. In addition, the drawings are only schematic and are non-limiting.

[0055] Although relative terms such as "upper", "lower", etc. are used herein to describe one component's relationship to another component as the figure is oriented, such terminology is used for convenience only and is not intended to limit the scope of the disclosure in any way. It is to be understood that the use of such relative terms is intended to encompass different orientations of the device in use or during operation, in which the device is inverted. For example, if a device described is turned over, elements described as "above" other elements or features would then be oriented "below" other elements or features. Likewise, when a device is inverted, elements described as "below" other elements or features would then be oriented "above" other elements or features. The device can be inverted during any step of the process. Therefore, the terms "above" and "below" should be interpreted to include the various alternative orientations as described.

[0056] The terms “a,” “one,” “the,” “the,” and “at least one” are used to indicate the presence of one or more elements / components / etc.; the terms “including” and “having” are used to indicate an open-ended inclusion and to mean that there may be other elements / components / etc. in addition to the listed elements / components / etc.; the terms “first,” “second,” and “third,” etc., are used only as markers and are not a limitation on the number of objects.

[0057] A pressure sensor is a device that converts pressure signals into electrical signals. For example... Figure 1 As shown, the pressure sensor includes a housing 100, a piezoresistive chip 200, an adhesive 300, and a circuit board 400. The piezoresistive chip 200 is the core component of the pressure sensor, converting the medium pressure signal into an electrical signal. The adhesive 300 fixes the piezoresistive chip 200 to the circuit board 400 and achieves an airtight seal. The circuit board 400 serves as the signal input and output port of the pressure sensor. The housing 100 covers the outside of the piezoresistive chip 200 and is connected to the circuit board 400, providing physical protection and electromagnetic shielding for the piezoresistive chip 200. The piezoresistive chip 200 is the core component of the pressure sensor, converting the medium pressure signal into an electrical signal. The main factor limiting the cost of the pressure sensor is the cost of the piezoresistive chip 200, and the main factor limiting the cost of the piezoresistive chip 200 is its size.

[0058] like Figure 1 As shown, the piezoresistive chip 200 includes a substrate 1, a piezoresistive resistor R, a resistor lead 3, and a lead-out electrode 4. The substrate 1 has a pressure-sensing portion 11 and a support portion 12. The thickness of the substrate 1 in the pressure-sensing portion 11 is less than the thickness in the support portion 12. The support portion 12 is disposed around the pressure-sensing portion 11, forming a pressure-sensing cavity 13. The piezoresistive resistor R is disposed on the side of the pressure-sensing portion 11 away from the pressure-sensing cavity 13. The support portion 12 is located between the edge of the pressure-sensing portion 11 and the edge of the substrate 1. The resistor lead 3 and the lead-out electrode 4 are disposed in the support portion 12. A resistor lead 3 is connected between every two adjacent piezoresistive resistors R, and each resistor lead 3 has a lead-out electrode 4. The pressure-sensing portion 11 is used to sense the medium pressure and can convert the medium pressure signal into a signal of mechanical deformation of the piezoresistive chip 200. The medium can typically be air. The medium pressure can be transmitted from the pressure-sensing cavity 13 to the pressure-sensing portion 11. When the medium pressure P is greater than one atmosphere, the pressure-sensing portion 11 deforms upward.

[0059] like Figure 2As shown, the piezoresistor R includes a first piezoresistor R1, a second piezoresistor R2, a third piezoresistor R3 and a fourth piezoresistor R4, the first piezoresistor R1 and the third piezoresistor R3 are oppositely arranged along a first direction, the second piezoresistor R2 and the fourth piezoresistor R4 are oppositely arranged along a second direction, the resistance lead 3 includes a first resistance lead 31, a second resistance lead 32, a third resistance lead 33 and a fourth resistance lead 34, two ends of the first resistance lead 31 are connected to the first piezoresistor R1 and the second piezoresistor R2, two ends of the second resistance lead 32 are connected to the second piezoresistor R2 and the third piezoresistor R3, two ends of the third resistance lead 33 are connected to the third piezoresistor R3 and the fourth piezoresistor R4, and two ends of the fourth resistance lead 34 are connected to the fourth piezoresistor R4 and the first piezoresistor R1.

[0060] The lead-out electrode 4 includes a first lead-out electrode 41, a second lead-out electrode 42, a third lead-out electrode 43 and a fourth lead-out electrode 44, the first lead-out electrode 41 is connected to the first resistance lead 31, the second lead-out electrode 42 is connected to the second resistance lead 32, the third lead-out electrode 43 is connected to the third resistance lead 33, and the fourth lead-out electrode 44 is connected to the fourth resistance lead 34, the fourth lead-out electrode 44 serves as a positive terminal of a power signal, the second lead-out electrode 42 serves as a negative terminal of the power signal, the first lead-out electrode 41 serves as a positive terminal of an output signal, and the third lead-out electrode 43 serves as a negative terminal of the output signal.

[0061] The measurement circuit of the piezoresistor chip 200 is based on the principle of the Wheatstone bridge, the input voltage Vin of the Wheatstone bridge is Vin+ - Vin-, and the output voltage Vout of the Wheatstone bridge is Vout+ - Vout-. The first piezoresistor R1, the second piezoresistor R2, the third piezoresistor R3 and the fourth piezoresistor R4 represent four bridge arm resistors of the Wheatstone bridge, and Vout can be represented by formula (1). When external pressure acts on the piezoresistor chip 200, the first piezoresistor R1 and the third piezoresistor R3 decrease by ΔR, i.e. their resistance values become R-ΔR, and the first piezoresistor R1 and the fourth piezoresistor R4 increase by ΔR, i.e. their resistance values become R+ΔR, so that Vout changes, and the change amount of Vout is proportional to the pressure value of the piezoresistor chip 200, thereby converting the pressure signal into a voltage signal, which can be represented by formula (2).

[0062] (1) ;

[0063] (2) ;

[0064] As Figure 3As shown, the shape of the edge contour of the base 1 and the shape of the edge contour of the pressure-sensitive part 11 are both rectangular. The support part 12 is located between the four sides of the pressure-sensitive part 11 and the corresponding sides of the base 1. The first support part 121 includes two sub-first support parts 1211, which are located on opposite sides of the pressure-sensitive part 11 along the first direction. The second support part 122 includes two sub-second support parts 1221, which are located on opposite sides of the pressure-sensitive part 11 along the second direction.

[0065] There are four piezoresistors R, with two R arranged opposite each other along a first direction and the other two R arranged opposite each other along a second direction. The four resistor leads 3 are arranged as rectangular loops with notches, connecting to the piezoresistors R at the notches. The lead-out electrode 4 is located at a corner of the loop segment directly opposite the notch. It can be seen that this requires the widths of both the first sub-support 1211 and the second sub-support 1221 to be greater than the width of the lead-out electrode 4, resulting in a relatively large piezoresistor chip 200 and thus a higher cost for the pressure sensor. It should be noted that the width refers to the dimension of the support 12 along either the first or second direction.

[0066] Taking a 1000μm × 1000μm piezoresistive chip 200 as an example, the piezoresistive chip 200 has dimensions of 1000μm × 1000μm. The area of ​​the support portion 12, where the varistor R is located, is 600μm × 600μm. The pressure-sensing portion 11 occupies only 36% of the chip area, while the support portion 12 occupies 64% of the chip area. Therefore, the proportion of the chip area occupied by the support portion 12 can be reduced, thereby reducing the volume of the piezoresistive chip 200. See [link / reference] Figure 4 The first support part 121 is the connection structure between the piezoresistive chip 200 and the circuit board 400 in the figure. In order to ensure the sealing effect, the width d1 of the first support part 1211 is generally greater than or equal to 200μm.

[0067] Based on this, this disclosure provides a piezoresistive chip 200. For example... Figures 5 to 26 As shown, the piezoresistive chip 200 includes a substrate 1, a piezoresistive resistor R, a resistor lead 3, and a lead-out electrode 4. The substrate 1 has a pressure-sensing portion 11 and a support portion 12. The thickness of the substrate 1 in the pressure-sensing portion 11 is less than the thickness in the support portion 12. The support portion 12 is disposed around the pressure-sensing portion 11, forming a pressure-sensing cavity 13. The piezoresistive resistor R is disposed on the side of the pressure-sensing portion 11 away from the pressure-sensing cavity 13. A piezoresistive resistor R is connected to each end of the resistor lead 3. The lead-out electrode 4 is connected to the resistor lead 3. The support portion 12 includes a first support portion 121 and a second support portion 122. The width of the lead-out electrode 4 is greater than the width of the first support portion 121 and less than the width of the second support portion 122. The first support portion 121 is only provided with the resistor lead 3, and the second support portion 122 is provided with the lead-out electrode 4.

[0068] The substrate 1 has a support portion 12, the support portion 12 includes a first support portion 121 and a second support portion 122, the width of the lead-out electrode 4 is greater than the width of the first support portion 121 and less than the width of the second support portion 122, the first support portion 121 is only provided with the resistance lead 3, and the second support portion 122 is provided with the lead-out electrode 4. By arranging the resistance lead 3 and the lead-out electrode 4 in different areas, the area occupied by the resistance lead 3 can be reduced, thereby reducing the volume of the piezoresistive chip 200 and reducing the cost of the pressure sensor.

[0069] The piezoresistive chip 200 related to the embodiment of the present disclosure will be described in detail below in combination with specific embodiments.

[0070] As shown in Figure 5 The shape of the substrate 1 and the shape of the pressure sensing portion 11 are both rectangular, the first side of the pressure sensing portion 11 is parallel to the first side of the substrate 1, the first support portion 121 is located between the first side of the pressure sensing portion 11 and the first side of the substrate 1, the second side of the pressure sensing portion 11 is parallel to the second side of the substrate 1, the second support portion 122 is located between the second side of the pressure sensing portion 11 and the second side of the substrate 1, the first side of the pressure sensing portion 11 and the first side of the substrate 1 extend along a first direction, the second side of the pressure sensing portion 11 and the second side of the substrate 1 extend along a second direction, and the second direction is perpendicular to the first direction.

[0071] The support portion 12 is a rectangular ring located between the edge of the substrate 1 and the edge of the pressure sensing portion 11, the support portion 12 includes the first support portion 121 and the second support portion 122, the first support portion 121 includes two sub-first support portions 1211, the two sub-first support portions 1211 are located on opposite sides of the pressure sensing portion 11 along the second direction, the second support portion 122 includes two sub-second support portions 1221, the two sub-second support portions 1221 are located on opposite sides of the pressure sensing portion 11 along the first direction, the first support portion 121 is only provided with the resistance lead 3, and the second support portion 122 is provided with the lead-out electrode 4.

[0072] The first resistance lead 31 includes a first lead segment 301, a second lead segment 302 and a third lead segment 303 connected in sequence, the first lead segment 301 is located in the first support portion 121, the first lead segment 301 is connected with the first piezoresistor R1, the first lead segment 301 extends along the first direction away from the first piezoresistor R1, the second lead segment 302 extends along the second direction to the second support portion 122, the third lead segment 303 is connected with one end of the second lead segment 302 away from the first lead segment 301, the third lead segment 303 extends along the first direction to be connected with the second piezoresistor R2, and the lead-out electrode 4 is connected to the second lead segment 302. The setting mode of the second resistance lead 32, the third resistance lead 33 and the fourth resistance lead 34 is basically the same as that of the first resistance lead 31, and will not be described one by one here.

[0073] The size of the first support part 121 in the second direction is small, so the size of the piezoresistive chip 200 in the second direction is also reduced. For example, the size of the piezoresistive chip 200 is reduced from WxL=1000 μm x 1000 μm to WxL=700 μm x 1000 μm, which is a reduction of 30%. As shown in FIG. 2, when the lead electrodes 4 are arranged on two sub-second support parts 1221, the width d1 of the first support part 121 is only 50 μm, which is less than 200 μm. This can cause the width d1 of the first support part 121 to be less than 200 μm, thereby reducing the sealing effect of the sensor and causing the pressure sensor to fail. Figure 6

[0074] Therefore, as shown in FIG. 3, the piezoresistive chip 200 further includes a carrier part 5 arranged at one end of the support part 12 away from the pressure sensing part 11, and the carrier part 5 extends towards the pressure sensing part 11. The width d2 of the carrier part 5 is greater than 200 μm, and in this embodiment, the width of the carrier part 5 is 300 μm. While ensuring the sealing effect, in order to ensure that the structural strength of the piezoresistive chip 200 meets the use requirements, the minimum width d1 of the first support part 121 is greater than or equal to 50 μm, and the minimum width d1 of the first support part 121 is the minimum size in the second direction. Figure 7

[0075] As shown in FIG. 4, the shape of the substrate 1 and the shape of the pressure sensing part 11 are both rectangular, the support part 12 is a rectangular ring arranged between the edge of the substrate 1 and the edge of the pressure sensing part 11, the first support part 121 includes three sub-first support parts 1211, two of which are arranged on opposite sides of the pressure sensing part 11 in the second direction, and the other sub-first support part 1211 is arranged on one side of the pressure sensing part 11 in the first direction. The second support part 1221 is arranged on the other side of the pressure sensing part 11 in the first direction, and the four lead electrodes 4 are arranged on the second support part 122. Figure 8 Figure 9

[0076] ​​​​Four leads 4 are arranged sequentially along the second direction, wherein the second lead 42 and the third lead 43 are arranged adjacent to each other, the first lead 41 is located on the side of the second lead 42 away from the third lead 43, and the fourth lead 44 is located on the side of the third lead 43 away from the second lead 42. The first resistance lead 31 includes a first extension 304, which is located along the second direction on the side of the second resistance lead 32 away from the pressure sensing part 11 and is connected to the first lead 41. The fourth resistance lead 34 includes a second extension 305, which is located along the second direction on the side of the third resistance lead 33 away from the pressure sensing part 11 and is connected to the fourth lead 44. Since the second lead electrode 42 and the third lead electrode 43 are close to the third piezoresistive resistor, the second resistor lead 32 also includes a third extension 306 arranged along the first direction, which is connected to the second lead electrode 42. The third resistor lead 33 also includes a fourth extension 307 arranged along the first direction, which is connected to the third lead electrode 43.

[0077] The piezoresistive chip 200 has a second sub-support portion 1221 on only one side. The width of the first sub-support portion 1211 is half the width of the second sub-support portion 1221. For a piezoresistive chip 200 with W×L=1000μm×1000μm, the size of the piezoresistive chip 200 is reduced from W×L=1000μm×1000μm to W×L=700μm×850μm, a reduction of 41%. To ensure the sealing effect between the piezoresistive chip 200 and the circuit board 400, a carrier portion 5 is also provided at the end of the support portion 12 away from the pressure-sensing portion 11. The carrier portion 5 extends towards the pressure-sensing portion 11.

[0078] like Figure 10 As shown, the second support portion 122 can also be configured to include three sub-second support portions 1221, which are respectively located between the three sides of the pressure-sensing portion 11 and the corresponding three sides of the substrate 1. Two lead-out electrodes 4 are located in one sub-second support portion 1221, and the other two lead-out electrodes 4 are located in the other two sub-second support portions 1221. The size of the piezoresistive chip 200 is reduced from W×L=1000μm×1000μm to W×L=1000μm×850μm, a reduction of 15%.

[0079] like Figures 11 to 14As shown, the pressure sensing part 11 is in a polygonal shape, and four corners of the polygonal shape are respectively provided with notch parts 111. The second support part 122 includes four sub-second support parts 1221, and the four sub-second support parts 1221 are respectively arranged at the four notch parts 111. The sub-second support part 1221 is located directly below the lead-out electrode 4, and can support the lead-out electrode 4 to prevent the lead-out electrode 4 from deforming when subjected to external force. The four resistance lead wires 3 include first lead wire segments 301 and second lead wire segments 302. The resistance lead wires 3 are parallel to the edges of the polygonal pressure sensing part 11. The first lead wire segments 301 extend in a first direction, and the second lead wire segments 302 extend in a second direction. One end of each of the first lead wire segments 301 and the second lead wire segments 302 is connected to the same lead-out electrode 4, and the other end is respectively connected to two adjacent pressure sensitive resistors R on the outer contour of the pressure sensing part 11.

[0080] The edges of the pressure sensing part 11, except for the notch parts, form four sub-first support parts 1211 with the edges of the substrate 1. Therefore, the area of the pressure sensing chip can be further reduced, and the size of the piezoresistive chip 200 is reduced from WxL=1000 μm x 1000 μm to WxL=700 μm x 700 μm, which is a reduction of 51%. Referring to Figure 7 , the width d1 of the first support part 121 is 50 μm, referring to Figure 13 , the width d3 of the second support part 122 is only 130 μm. Therefore, a carrier part 5 is arranged at one end of the first support part 121 away from the pressure sensitive resistor R. The carrier part 5 extends towards the pressure sensing part 11, and the width d2 of the carrier part 5 is greater than 200 μm, which ensures the reliability of the sealing between the piezoresistive chip 200 and the circuit board 400. The width d1 of the first support part 121 is the size of the first support part 121 in the second direction. The width d2 of the carrier part 5 is the size of the carrier part 5 in the second direction, and the width of the second support part 122 is the size of the second support part 122 in the second direction.

[0081] As shown in Figure 15 and Figure 16 , the extension direction of the edges of the pressure sensing part 11 intersects the extension direction of the edges of the substrate 1, and the edges of the substrate 1 and the edges of the pressure sensing part 11 form a support part 12. The first support part 121 includes four sub-first support parts 1211, and the second support part 122 includes four sub-second support parts 1221. The sub-first support parts 1211 and the sub-second support parts 1221 are arranged at intervals, and the four lead-out electrodes are arranged at the four sub-second support parts 1221.

[0082] Specifically, the corner of the pressure sensing part 11 is arranged opposite to the edge of the substrate 1, and the edge of the substrate 1 and the edge of the pressure sensing part 11 form the support part 12, the support part 12 includes the first support part 121 and the second support part 122, the first support part 121 includes four sub-first support parts 1211, and the sub-first support part 1211 is arranged on the vertical line of the corner of the pressure sensing part 11 and the edge of the substrate 1, and the second support part 1221 is arranged between each adjacent two sub-first support parts 1211, that is, the four sub-first support parts 1211 are located between the four corners of the pressure sensing part 11 and the four edges of the substrate 1, and the four sub-second support parts 1221 are respectively the corner area surrounded by the two edges of the pressure sensing part 11 and the substrate 1, and the four lead electrodes 4 are arranged in the four sub-second support parts 1221.

[0083] It should be noted that the shape of the substrate 1 is rectangular, and the sub-first support part 1211 can be arranged along the diagonal direction of the substrate 1.

[0084] The four resistance leads 3 are arranged along the outer contour of the pressure sensing part 11. The four resistance leads 3 each include a first lead segment 301 and a second lead segment 302, the first lead segment 301 extends in a first direction, and the second lead segment 302 extends in a second direction, and since the second lead segment 302 is closer to the pressure sensitive resistor R, the four resistance leads 3 further include a third lead segment 303, the third lead segment 303 is arranged on the side away from the pressure sensing part 11 of the second lead segment 302, the third lead segment 303 extends away from the pressure sensing part 11, and the four lead electrodes 4 are connected to the respective third lead segments 303 of the four resistance leads 3.

[0085] Since the side length of the pressure sensing part 11 is 600 μm, the included angle between the edge of the pressure sensing part 11 and the edge of the substrate 1 can be 45°, and the minimum distance between the edges of the substrate 1 corresponding to the four corners of the pressure sensing part 11 is 50 μm, so the side length of the piezoresistive chip 200 can be calculated as W= μm. The size of the piezoresistive chip 200 is reduced from W×L=1000 μm×1000 μm to W×L=948 μm×948 μm, and the size of the piezoresistive chip 200 is reduced by 10%.

[0086] As Figure 17As shown, although the width d3 of the sub-second support part 1221 is greater than 200 μm, since the width d1 of the sub-first support part 1211 is only 50 μm, it is necessary to set the carrier part 5 at the end of the first support part 121 away from the piezoresistor R, the carrier part 5 extends towards the direction close to the sensing part 11, the width d3 of the carrier part 5 is greater than the width of the sub-second support part 1221, and in this embodiment, the size of the carrier part 5 along the second direction can be 620 μm. The width d1 of the sub-second support part 1221 is the size of the sub-second support part 1221 along the second direction. The width d3 of the carrier part 5 is the size of the carrier part 5 along the second direction.

[0087] As shown in the drawings, Figures 18 to 20 The first support part 121 is located between the edge of the sensing part 11 and the edge of the substrate 1, the orthographic projection of the second support part 122 on the substrate 1 is located within the orthographic projection of the sensing part 11 on the substrate 1, the four lead electrodes 4 are all arranged on the second support part 122, the second support part 122 is directly below the lead electrodes 4, and the second support part 122 supports the lead electrodes 4 and can prevent the lead electrodes 4 from deforming when subjected to external force. The sensing part 11 and the second support part 122 are both rectangular, and the center of the orthographic projection of the second support part 122 on the substrate 1 coincides with the center of the sensing part 11.

[0088] The resistance lead 3 includes a first lead segment 301, a second lead segment 302, and a third lead segment 303. The first lead segment 301 extends along the first direction, the second lead segment 302 extends along the second direction, one end of the first lead segment 301 is connected to one end of the second lead segment 302, the other end of the first lead segment 301 and the other end of the second lead segment 302 are respectively connected to two adjacent piezoresistors R on the outer contour of one sensing part 11, one end of the third lead segment 303 is connected to the connection position of the first lead segment 301 and the second lead segment 302, the third lead segment 303 extends along the diagonal connecting line of the sensing part 11 and the second support part 122, and the other end of the third lead segment 303 is connected to the lead electrode 4.

[0089] The size of the piezoresistive chip 200 is reduced from WxL=1000 μm x 1000 μm to WxL=700 μm x 700 μm, and the size of the piezoresistive chip 200 is reduced by 51%. Similarly, the carrier part 5 is arranged at the end of the first support part 121 away from the piezoresistor R, and the carrier part 5 extends towards the direction close to the sensing part 11.

[0090] It should be noted that the first direction is the y direction in the figure, and the second direction is the x direction in the figure.

[0091] The utility model also provides a kind of preparation method of piezoresistive chip 200. The method can include:

[0092] Step S10, forming the sensing part 11 and the support part 12 on the substrate 1.

[0093] Step S20: Prepare a varistor R on the side of the substrate 1 away from the pressure-sensing cavity 13.

[0094] Step S30: Prepare a resistor lead 3 on the side of the substrate 1 away from the pressure-sensing cavity 13.

[0095] Step S40: Prepare an electrode 4 on the side of the resistor lead 3 away from the substrate 1.

[0096] Step S10, forming the pressure-sensitive part 11 and the support part 12 on the substrate 1, may include:

[0097] like Figure 21 As shown, N(100) silicon is used as substrate 1, and silicon nitride is grown on both sides of it as a mask layer. After the silicon nitride deposition is completed, the required shape of the pressure-sensing cavity 13 is photolithographically etched on the bottom of substrate 1. The substrate 1 is wet-etched using hot alkaline potassium hydroxide (KOH) or tetramethylammonium hydroxide (TMAH) solution. After etching, the silicon nitride mask layer is removed using hot phosphoric acid solution.

[0098] In step S20, a varistor R is prepared on the side of the substrate 1 away from the pressure-sensing cavity 13.

[0099] like Figure 22 As shown, the required pattern of the varistor R is prepared by photolithography. Ion implantation is performed using photoresist as a mask layer. After implantation, the photoresist is removed, and the implanted substrate 1 is annealed. The sheet resistance of the varistor R after annealing is required to be 100~1000Ω / square.

[0100] In step S30, a resistor lead 3 is prepared on the side of the substrate 1 away from the pressure-sensing cavity 13.

[0101] like Figure 23 As shown, the required pattern for resistor lead 3 is prepared by photolithography. Ion implantation is performed using photoresist as a mask layer. After implantation, the photoresist is removed, and the implanted silicon wafer is annealed. The required resistance of resistor lead 3 after annealing is 20~100Ω / square.

[0102] Between steps S30 and S40, the method may further include step S50, which prepares the carrier portion 5. Step S50 may include:

[0103] like Figure 24 As shown, glass is used as the carrier portion 5, and through holes are fabricated on the carrier portion 5 using photolithography and etching to serve as the air inlet for the piezoresistive chip 200. The diameter of the air inlet is 100 μm. If the air inlet is a square hole, then the side length of the air inlet is 100 μm × 100 μm.

[0104] Between steps S50 and S40, the method may further include step S60, which involves bonding the carrier portion 5 to the support portion 12. Step S60 may include:

[0105] like Figure 25 As shown, the support portion 12 of the substrate 1 and the carrier portion 5 are bonded together by anodic bonding. During the bonding process, the support portion 12 is connected to the positive terminal of the power supply, and the carrier portion 5 is connected to the negative terminal of the power supply. The voltage is 200~1000V and the temperature is 100~500℃.

[0106] Step S40, which involves fabricating the lead electrode 4 on the side of the resistor lead 3 away from the substrate 1, may include:

[0107] like Figure 26 As shown, an adhesion layer and a lead electrode layer 4 are deposited on the resistor lead 3 using physical vapor deposition (PVD) or chemical vapor deposition (CVD) processes. The adhesion layer is made of titanium or chromium and has a thickness of 20~50nm. The lead electrode layer 4 is made of aluminum or gold and has a thickness of 0.5~2um. After deposition, photolithography is performed to form the required lead electrode 4.

[0108] This disclosure also provides a pressure sensor, which may include the piezoresistive chip 200 mentioned above in this disclosure. The specific structure and beneficial effects of the pressure sensor can be found in the piezoresistive chip 200, whose specific structure and beneficial effects have been described in detail above and will not be repeated here.

[0109] It should be noted that, in addition to the piezoresistive chip 200, the pressure sensor also includes other necessary components and parts, such as the housing 100, the circuit board 400, etc. Those skilled in the art can make corresponding additions according to the specific usage requirements of the display device, which will not be elaborated here.

[0110] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the appended claims.

Claims

1. A piezoresistive chip, characterized by, The application relates to a pressure sensor, comprising: a substrate having a pressure sensing part and a support part, the thickness of the pressure sensing part being smaller than that of the support part, the support part being arranged at the periphery of the pressure sensing part to form a pressure sensing cavity; a pressure sensitive resistor arranged on the side of the pressure sensing part away from the pressure sensing cavity; a resistor lead wire, two ends of the resistor lead wire being connected to one pressure sensitive resistor respectively; an output electrode connected to the resistor lead wire; the support part comprises a first support part and a second support part, the width of the output electrode being greater than that of the first support part and smaller than that of the second support part, the first support part being provided with the resistor lead wire only, and the second support part being provided with the output electrode.

2. The piezoresistive chip of claim 1, wherein, the pressure sensitive resistor comprises a first pressure sensitive resistor, a second pressure sensitive resistor, a third pressure sensitive resistor and a fourth pressure sensitive resistor, the first pressure sensitive resistor and the third pressure sensitive resistor being oppositely arranged along a first direction, the second pressure sensitive resistor and the fourth pressure sensitive resistor being oppositely arranged along a second direction, the resistor lead wire comprising a first resistor lead wire, a second resistor lead wire, a third resistor lead wire and a fourth resistor lead wire, two ends of the first resistor lead wire being connected to the first pressure sensitive resistor and the second pressure sensitive resistor, two ends of the second resistor lead wire being connected to the second pressure sensitive resistor and the third pressure sensitive resistor, two ends of the third resistor lead wire being connected to the third pressure sensitive resistor and the fourth pressure sensitive resistor, and two ends of the fourth resistor lead wire being connected to the fourth pressure sensitive resistor and the first pressure sensitive resistor, the output electrode comprising a first output electrode, a second output electrode, a third output electrode and a fourth output electrode, the first output electrode being connected to the first resistor lead wire, the second output electrode being connected to the second resistor lead wire, the third output electrode being connected to the third resistor lead wire, and the fourth output electrode being connected to the fourth resistor lead wire, the fourth output electrode serving as a positive terminal of a power signal, the second output electrode serving as a negative terminal of the power signal, the first output electrode serving as a positive terminal of an output signal, and the third output electrode serving as a negative terminal of the output signal.

3. The piezoresistive chip of claim 2, wherein, the first support part and the second support part are both located between the edge of the pressure sensing part and the edge of the substrate.

4. The piezoresistive chip of claim 3, wherein, the pressure sensing part is in the shape of a rectangle, the second support part comprises two sub-second support parts, the two sub-second support parts being located on opposite sides of the pressure sensing part, two output electrodes being arranged on one sub-second support part, and the other two output electrodes being arranged on the other sub-second support part.

5. The piezoresistive chip of claim 4, wherein, The four resistance lead lines each include a first lead line segment, a second lead line segment and a third lead line segment, the first lead line segment and the third lead line segment extend along the first direction, one end of the first lead line segment and the third lead line segment is connected to two adjacent pressure sensitive resistors on the outer contour of the pressure sensing part, the second lead line segment extends along the second direction, the other end of the first lead line segment and the third lead line segment is connected to the second lead line segment, the first lead line segment is arranged on the first support part, the second lead line segment and the third lead line segment are arranged on the second support part, and the four lead electrodes are connected to the second lead line segment of the four resistance lead lines.

6. The piezoresistive chip of claim 3, wherein, The pressure sensing part is in the shape of a rectangle, the second support part is located on one side of the pressure sensing part, and the four lead electrodes are arranged on the second support part.

7. The piezoresistive chip of claim 6, wherein, The second lead electrode and the third lead electrode are arranged adjacently, the first lead electrode is located on the side of the second lead electrode away from the third lead electrode, the fourth lead electrode is located on the side of the third lead electrode away from the second lead electrode, the first resistance lead line includes a first extension segment, the first extension segment is located on the side of the second resistance lead line away from the pressure sensing part along the second direction, the first extension segment is connected to the first lead electrode, the fourth resistance lead line includes a second extension segment, the second extension segment is located on the side of the third resistance lead line away from the pressure sensing part along the second direction, and the second extension segment is connected to the fourth lead electrode.

8. The piezoresistive chip of claim 3, wherein, The pressure sensing part is in the shape of a rectangle, the second support part includes three sub-second support parts, and the three sub-second support parts are respectively located between three sides of the pressure sensing part and corresponding three sides of the base, two of the lead electrodes are located on one of the sub-second support parts, and the other two lead electrodes are respectively located on the other two sub-second support parts.

9. The piezoresistive chip of claim 3, wherein, The pressure sensing part is in the shape of a polygon, four corners of the polygon are respectively provided with notch parts, the second support part includes four sub-second support parts, the four sub-second support parts are respectively arranged in the four notch parts, and the four lead electrodes are respectively arranged in the four sub-second support parts.

10. The piezoresistive chip of claim 9, wherein, The four resistance lead lines include a first lead line segment and a second lead line segment, the first lead line segment extends along the first direction, the second lead line segment extends along the second direction, one end of the first lead line segment and the second lead line segment is connected to the same lead electrode, and the other end is respectively connected to two adjacent pressure sensitive resistors on the outer contour of the pressure sensing part.

11. The piezoresistive chip of claim 3, wherein, The extension direction of the edge of the pressure sensing part intersects with the extension direction of the edge of the base, the edge of the base and the edge of the pressure sensing part form the support part, the first support part includes four sub-first support parts, the second support part includes four sub-second support parts, the sub-first support parts and the sub-second support parts are arranged at intervals, and the four lead electrodes are arranged on the four sub-second support parts.

12. The piezoresistive chip of claim 11, wherein, The four resistance lead lines each include a first lead line segment, a second lead line segment and a third lead line segment, the first lead line segment extends in the first direction, the second lead line segment extends in the second direction, the third lead line segment is arranged on a side of the second lead line segment away from the pressure sensing part, the third lead line segment extends away from the pressure sensing part, and the four lead-out electrodes are connected to the third lead line segments of the four resistance lead lines respectively.

13. The piezoresistive chip of claim 2, wherein, The first support part is located between the edge of the pressure sensing part and the edge of the substrate, and the orthographic projection of the second support part on the substrate is located within the orthographic projection of the pressure sensing part on the substrate, and the four lead-out electrodes are arranged on the second support part.

14. The piezoresistive chip of claim 13, wherein, The pressure sensing part and the second support part are both rectangular in shape, and the center of the orthographic projection of the second support part on the substrate coincides with the center of the pressure sensing part.

15. The piezoresistive chip according to claim 13 or 14, characterized in that The resistance lead line includes a first lead line segment, a second lead line segment and a third lead line segment, the first lead line segment extends in a first direction, the second lead line segment extends in a second direction, one end of the first lead line segment is connected to one end of the second lead line segment, the other end of the first lead line segment and the other end of the second lead line segment are respectively connected to two adjacent pressure sensitive resistors on the outer contour of the pressure sensing part, one end of the third lead line segment is connected to the connection between the first lead line segment and the second lead line segment, the third lead line segment extends along the diagonal connecting line between the pressure sensing part and the second support part, and the other end of the third lead line segment is connected to the lead-out electrode.

16. The piezoresistive chip of claim 1, wherein, The piezoresistive chip further includes a carrier part, the carrier part is arranged on an end of the first support part away from the pressure sensitive resistors, and the carrier part extends towards the pressure sensing part.

17. The piezoresistive chip of claim 16, wherein, The carrier part is made of a material different from that of the support part.

18. A pressure sensor, characterized by The piezoresistive chip includes any one of claims 1 to 17.

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