High-temperature wafer testing device
By employing a combination of concentric ring-shaped and disc-shaped chucks in the high-temperature wafer testing device, along with heaters and thermal pads, the problem of heat accumulation in the center of the chucks was solved, achieving uniform temperature distribution and improving testing accuracy.
Patent Information
- Application Number
- CN202520069004.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-13
- Publication Date
- 2026-01-06
- Estimated Expiration
- 2035-01-13
AI Technical Summary
During high-temperature testing, heat buildup in the center of the suction cup causes the temperature to be higher than that on the outside, resulting in insufficient testing accuracy for integrated circuit wafers.
The design employs an insulation jacket and suction cup assembly. The suction cup assembly consists of several concentric annular and disc-shaped suction cups, combined with a heater and thermal pads, to evenly distribute heat and reduce the temperature difference between the center and the edges.
This achieves a uniform temperature distribution on the chuck surface, improving the accuracy of high-temperature wafer testing.
Smart Images
Figure CN223772455U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to wafer test technical field, concretely is a high temperature wafer testing device. BACKGROUND
[0002] Wafer refers to the silicon wafer used for making silicon semiconductor integrated circuit, and the wafer is usually adsorbed by chuck during wafer testing. Wafer high temperature testing is an important process in integrated circuit industry, and through strict high temperature testing, defective wafer chips can be removed in advance, and the high packaging cost in the subsequent process can be reduced. During high temperature testing, the heat of the chuck center is more likely to accumulate together due to the influence of the thermal conductivity of the chuck material, resulting in that the temperature of the chuck center is higher than that of the outer side of the chuck, thereby causing a large temperature difference on the surface of the chuck, and further causing the insufficient high temperature testing precision of the integrated circuit wafer. SUMMARY
[0003] The utility model discloses a high temperature wafer testing device, to solve the problem in the background art.
[0004] In view of the above problems, the technical scheme provided by the utility model is:
[0005] A high temperature wafer testing device, comprising a temperature insulation sleeve, a chuck group and a heater, wherein the temperature insulation sleeve comprises a sleeve body, the top surface of the sleeve body is provided with a mounting cavity, the chuck group comprises a plurality of concentric ring-shaped chucks and a group of disc-shaped chucks, the disc-shaped chucks are located inside the innermost ring-shaped chucks, the distance between adjacent ring-shaped chucks and the distance between the ring-shaped chucks and the disc-shaped chucks are equal, and the ring widths of the plurality of ring-shaped chucks are equal, the disc-shaped chucks and the plurality of ring-shaped chucks are concentric, the heater is installed in the mounting cavity, the chuck group is also installed in the mounting cavity, the heater heats the plurality of ring-shaped chucks and disc-shaped chucks, the heater comprises a heating sheet fixed in the mounting cavity, the top surface of the heating sheet is provided with a plurality of rings of heat-conducting gaskets, each ring of heat-conducting gaskets can form a circular ring, and each ring of heat-conducting gaskets is only attached to a group of disc-shaped chucks, the innermost ring of heat-conducting gaskets is attached to the ring-shaped chucks, at the same time, the number of heat-conducting gaskets gradually decreases from the outermost ring to the innermost ring, the plurality of ring-shaped chucks, disc-shaped chucks and heat-conducting gaskets are attached, the side surface of the sleeve body is penetrated by a wire tube, the power supply wire of the heating sheet extends to the outside of the sleeve body through the wire tube, the side surface of the plurality of ring-shaped chucks and disc-shaped chucks is embedded with a plurality of temperature sensors, and the wire of the temperature sensor also extends to the outside of the sleeve body through the wire tube, and if the number of wire tubes is insufficient, it can be appropriately increased.
[0006] Further, the ring-shaped suction disc is internally provided with a hollow cavity, and the top surface of the ring-shaped suction disc is uniformly distributed with a plurality of air suction holes, and the side surface of the ring-shaped suction disc is provided with an air outlet hole, and the plurality of air suction holes and the air outlet hole are in communication with the hollow cavity, the side surface of the sleeve is penetrated by an air nozzle, and the air nozzle is in communication with the air outlet hole, and the plurality of ring-shaped suction discs and disc-shaped suction discs are in the same height and flush, that is, the top surfaces of the ring-shaped suction disc and the disc-shaped suction disc are in the same horizontal plane, and the bottom surfaces are also in the same horizontal plane, so that the plurality of ring-shaped suction discs and disc-shaped suction discs can be in close contact with the wafer and the heat-conducting gasket.
[0007] Further, the inside of the sleeve is provided with a vacuum, the suction disc group is sunk in the mounting cavity, that is, there is a certain space between the top surface of the suction disc group and the sleeve, and the use of the vacuum sleeve reduces the heat loss of the outermost ring-shaped suction disc.
[0008] Compared with the prior art, the high-temperature wafer testing device has the advantages that: the originally one whole suction disc is divided into a plurality of ring-shaped suction discs and a group of disc-shaped suction discs, and they are combined into a form similar to concentric circles, so that the heat can be more uniformly distributed in the circumferential direction, the temperature difference between the center and the edge is reduced, and the technical problem of excessively high temperature of the center of the suction disc body is alleviated, and then the surface temperature of the suction disc body can be uniformly distributed. BRIEF DESCRIPTION OF DRAWINGS
[0009] Figure 1 The high-temperature wafer testing device disclosed by the embodiment of the utility model is a three-dimensional structure schematic view;
[0010] Figure 2 The high-temperature wafer testing device disclosed by the embodiment of the utility model is an explosion structure schematic view;
[0011] Figure 3 For Figure 2 The structure of the middle A is enlarged and schematically shown;
[0012] Figure 4 For Figure 2 The structure of the middle B is enlarged and schematically shown.
[0013] In the drawing: 100, temperature insulation sleeve; 1001, sleeve; 1002, air nozzle; 200, suction disc group; 2001, ring-shaped suction disc; 2002, disc-shaped suction disc; 2003, air suction hole; 2004, air outlet hole; 300, heater; 3001, heating sheet; 3002, heat-conducting gasket. DETAILED DESCRIPTION
[0014] With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all the other embodiments obtained by those skilled in the art without creative work are within the scope of the present application.
[0015] With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all the other embodiments obtained by those skilled in the art without creative work are within the scope of the present application. Figure 1 Figure 4 The present application provides a technical solution: a high-temperature wafer testing device, the side of the sleeve body 1001 is penetrated by the air nozzle 1002, the air nozzle 1002 is connected with the air pump, the inside of the outermost annular suction disc 2001 is provided with a hollow cavity, and a plurality of air suction holes 2003 are uniformly distributed on the top surface of the annular suction disc 2001 in the circumferential direction, the side of the annular suction disc 2001 is provided with an air outlet hole 2004, and the plurality of air suction holes 2003 and the air outlet hole 2004 are in communication with the hollow cavity, and the air nozzle 1002 is in communication with the air outlet hole 2004, after the wafer is placed on the suction disc group 200, the air pump is started, a negative pressure can be formed at the air suction hole 2003, so that the wafer is adsorbed. With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all the other embodiments obtained by those skilled in the art without creative work are within the scope of the present application.
[0016] With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all the other embodiments obtained by those skilled in the art without creative work are within the scope of the present application. Figure 1 Figure 4 The utility model provides a technical scheme: a high temperature wafer testing arrangement, the side of casing 1001 is through wire pipe, the power supply line of heating sheet 3001 passes wire pipe extension to the outside of casing 1001, the side of a plurality of annular suction cup 2001 and disc suction cup 2002 all are embedded with a plurality of temperature sensor, the circuit of temperature sensor also passes wire pipe extension to the outside of casing 1001, the circuit of heating sheet 3001 is connected to power supply, the circuit of temperature sensor is connected through analog-digital converter and processing equipment, the top of casing 1001 is equipped with installation cavity, suction cup group 200 includes a plurality of concentric annular suction cup 2001 and a group of disc suction cup 2002, heater 300 is installed in installation cavity, suction cup group 200 is also installed in installation cavity, heater 300 heats a plurality of annular suction cup 2001 and disc suction cup 2002, heater 300 includes heating sheet 3001 fixed in installation cavity, the top of heating sheet 3001 is installed with a plurality of circle heat-conducting gaskets 3002, a plurality of annular suction cup 2001, disc suction cup 2002 and heat-conducting gasket 3002 are pasted, the heating sheet 3001 of electricity connection can pass through heat-conducting gasket 3002 and transmit heat to annular suction cup 2001 and disc suction cup 2002, then heat wafer again, the user understands heating temperature through temperature sensor, and understands the different performance of wafer under different temperature with this, utilize electrical test instrument to gather the data of wafer, record the electrical performance index change of wafer in different temperature stage.
[0017] Specifically, the working principle of the high temperature wafer testing device is as follows: when in use, the air nozzle 1002 is connected with the air pump, the wafer is placed on the suction cup group 200, and then the air pump is started to form a negative pressure at the air hole 2003, so that the wafer is adsorbed, the circuit of the heating sheet 3001 is connected to the power supply, the circuit of the temperature sensor is connected through the analog-digital converter and the processing equipment, the heating sheet 3001 after electricity connection can transmit heat to the annular suction cup 2001 and the disc suction cup 2002 through the heat-conducting gasket 3002, then heat the wafer again, the user understands the heating temperature through the temperature sensor, and understands the different performance of the wafer under different temperatures with this, utilizes the electrical test instrument to gather the data of the wafer, and records the electrical performance index change of the wafer in different temperature stages.
Claims
1. A high temperature wafer testing apparatus, characterized by, The application relates to a temperature insulation sleeve (100), a suction disc group (200) and a heater (300), wherein the temperature insulation sleeve (100) comprises a sleeve body (1001), the top surface of the sleeve body (1001) is provided with a mounting cavity, the suction disc group (200) comprises a plurality of concentric ring-shaped suction discs (2001) and a group of disc-shaped suction discs (2002), the disc-shaped suction discs (2002) are arranged inside the innermost ring-shaped suction disc (2001), the disc-shaped suction discs (2002) are concentric with the ring-shaped suction discs (2001), the suction disc group (200) is used for adsorbing wafers, the heater (300) is arranged in the mounting cavity, and the suction disc group (200) is also arranged in the mounting cavity.
2. The high temperature wafer testing apparatus of claim 1, wherein The heater (300) comprises a heating sheet (3001) fixed in the mounting cavity, the top surface of the heating sheet (3001) is provided with a plurality of heat-conducting gaskets (3002), and the ring-shaped suction discs (2001), the disc-shaped suction discs (2002) and the heat-conducting gaskets (3002) are attached.
3. The high temperature wafer testing apparatus of claim 2, wherein The sleeve body (1001) is provided with a wire tube penetrating through the side surface, and the power supply wire of the heating sheet (3001) extends to the outside of the sleeve body (1001) through the wire tube.
4. The high temperature wafer testing apparatus of claim 1, wherein The inner part of the outermost ring-shaped suction disc (2001) is provided with a hollow cavity, the top surface of the ring-shaped suction disc (2001) is uniformly provided with a plurality of air suction holes (2003) in the circumferential direction, the side surface of the ring-shaped suction disc (2001) is provided with an air outlet hole (2004), the air suction holes (2003) and the air outlet hole (2004) are communicated with the hollow cavity, the side surface of the sleeve body (1001) is provided with an air nozzle (1002) penetrating through the side surface, and the air nozzle (1002) is communicated with the air outlet hole (2004).
5. The high temperature wafer testing apparatus of claim 1, wherein The ring-shaped suction discs (2001) and the disc-shaped suction discs (2002) are in the same height and are flush.
6. The high temperature wafer testing apparatus of claim 1, wherein The side surfaces of the ring-shaped suction discs (2001) and the disc-shaped suction discs (2002) are embedded with a plurality of temperature sensors.
7. The high temperature wafer testing apparatus of claim 1, wherein The inside of the sleeve body (1001) is provided with a vacuum.