Photoelectric sensor based on gold nanoparticle modified perovskite layer and graphene layer interface
By modifying the perovskite layer and graphene layer interface with gold nanoparticles, the photoelectric sensor structure solves the problems of complex and high cost of traditional photoelectric sensors, realizes the fabrication of low-cost, flexible photoelectric sensors, and improves photosensitivity.
Patent Information
- Application Number
- CN202520218591.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-12
- Publication Date
- 2026-01-09
- Estimated Expiration
- 2035-02-12
AI Technical Summary
Existing photoelectric sensors suffer from complex manufacturing processes, high costs, and inflexibility. Traditional inorganic materials are difficult to integrate with flexible substrates and require supporting cooling equipment.
A photoelectric sensor structure with gold nanoparticles modified at the interface between a perovskite layer and a graphene layer is proposed. The structure includes a Si substrate layer, a SiO2 layer, a Cr/Au electrode layer, a monolayer graphene layer, a gold nanoparticle modification layer, a perovskite light-absorbing layer, and a hole accumulation layer. It combines the high carrier transport characteristics of the perovskite light-absorbing layer and the graphene layer, and improves the performance by modifying the interface with gold nanoparticles.
It achieves improved photosensitivity, has a simple fabrication process, low cost, and potential for flexible applications. It solves the problems of complex processes and high costs of traditional photoelectric sensors, and also has flexibility.
Smart Images
Figure CN223786434U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to photoelectric sensing technical field, concretely relates to a kind of photoelectric sensor based on gold nano-particle modification perovskite layer and graphene layer interface. BACKGROUND
[0002] Photoelectric detector has the function of converting optical signal into electrical signal, is the basic device of supporting optical information technology field, because of having small size, low energy consumption and other advantages, photoelectric detector has been applied in each aspect of our life, also become the most widely used electronic device today.
[0003] Existing photoelectric detector faces many problems, for example, in the selection of light-absorbing layer material, traditional inorganic material such as silicon, gallium arsenide, although it has excellent performance, but also has many shortcomings, such as complex process, high cost, lack of flexibility, etc. These traditional inorganic semiconductors are difficult to be compatible with flexible substrate, and often need to be matched with refrigeration equipment to reduce the working temperature. SUMMARY
[0004] The utility model provides a kind of photoelectric sensor based on gold nano-particle modification perovskite layer and graphene layer interface, solve the problem of traditional photoelectric sensor complex process, high cost, photosensitive performance is not remarkable, simultaneously, the device has the potential of flexible application.
[0005] In order to achieve the above purpose, the utility model adopts the following technical scheme:
[0006] A kind of photoelectric sensor based on gold nano-particle modification perovskite layer and graphene layer interface, Si substrate layer, SiO2 layer, Cr / Au electrode layer, single layer graphene layer, gold nano-particle modification layer, perovskite light-absorbing layer and hole accumulation layer are sequentially provided from bottom to top.
[0007] The Si substrate layer and SiO2 layer form a substrate structure, and the substrate structure is composed of heavily doped n-type Si and a 250 nm thermally grown SiO2 layer, and the substrate structure has a thickness of 0.3 cm.
[0008] The Cr / Au electrode layer is an interdigital electrode formed by alternately evaporating Cr and Au, and the interdigital electrode is located at the center of the upper surface of the substrate structure. The interdigital electrode is composed of 0.2 mm of Cr, 0.2 mm of Au, 0.2 mm of Cr, and 0.2 mm of Au from bottom to top.
[0009] The single layer graphene layer has a thickness of 0.3 nm.
[0010] The gold nano-particle modification layer is spin-coated on the surface of the single layer graphene layer.
[0011] The perovskite light-absorbing layer covers the gold nanoparticle modification layer directly, and is composed of a PbI2 spin-coating layer and a FAI spin-coating layer from bottom to top, and the thickness of the perovskite light-absorbing layer is 200-300 nm.
[0012] The hole accumulation layer is a Spiro-OMeTAD spin-coating layer, and the thickness is 200-300 nm.
[0013] Compared with the prior art, the present application has the following beneficial effects:
[0014] 1. The photoelectric sensor structure, by preparing a perovskite light-absorbing layer and a graphene sensing layer, and adding a gold nanoparticle modification interface, further improves the photosensitive performance of the device, and solves the problems of complex process, high cost and inflexibility of traditional photoelectric sensors.
[0015] 2. The photoelectric sensor uses perovskite as the light-absorbing layer, has the characteristics of low cost, easy film formation, narrow band gap, high absorption coefficient, and high carrier mobility. When combined with a graphene sensing layer with high carrier transport characteristics, it exhibits excellent photosensitive performance. In addition, by introducing gold nanoparticles as an interface modification layer, the sensing performance can be further improved.
[0016] 3. The preparation process of the photoelectric sensor is simple, the materials are easy to obtain, the cost is low, and it has the potential for flexible application, which solves the problems of existing photoelectric sensors to some extent. DETAILED DESCRIPTION
[0017] The drawings described herein are used to provide a further understanding of the present application, and form a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application, and do not constitute an improper limitation on the present application. In the drawings:
[0018] Figure 1 is a structural schematic diagram of the present application;
[0019] Figure 2 is a substrate schematic diagram of the present application;
[0020] Figure 3 is a Cr / Au electrode layer schematic diagram of the present application;
[0021] Figure 4 is a single-layer graphene layer schematic diagram;
[0022] Figure 5 is a gold nanoparticle modification layer schematic diagram;
[0023] Figure 6 is a perovskite light-absorbing layer schematic diagram;
[0024] Figure 7A schematic view of a hole accumulation layer. DETAILED DESCRIPTION
[0025] The principles and features of the present application are described below in conjunction with the accompanying drawings, which are presented only for the purpose of illustrating the present application and are not intended to limit the scope of the present application. In the following paragraphs, the present application is described in more detail with reference to the accompanying drawings. It should be noted that the drawings are all in a very simplified form and all use non-precise proportions, only for the purpose of conveniently and clearly assisting in the description of the purposes of the embodiments of the present application.
[0026] As shown in Figure 1 A kind of photoelectric sensor based on gold nanoparticles modification perovskite layer and graphene layer interface, from bottom to top, Si substrate layer 1, SiO 2 Layer 2, Cr / Au electrode layer 3, single layer graphene layer 4, gold nanoparticles modification layer 5, perovskite light absorption layer 6 and hole accumulation layer 7 are sequentially provided.
[0027] Specifically:
[0028] As shown in Figure 2 Si substrate layer 1 and SiO 2 Layer 2 form a substrate structure, the substrate structure is composed of heavily doped n-type Si and 250 nm thermally grown SiO 2 Layer, the substrate is a square of 1 cm x 1 cm, and the thickness is 0.3 cm.
[0029] As shown in Figure 3 Cr / Au electrode layer 3 is an interdigital electrode composed of Cr and Au alternately evaporated, the interdigital electrode is located at the center of the upper surface of the substrate structure, and the interdigital electrode is composed of 0.2 mm of Cr, 0.2 mm of Au, 0.2 mm of Cr and 0.2 mm of Au from bottom to top, the electrode width is 0.2 mm, the electrode length is 6 mm, and the electrode gap width is 0.2 mm.
[0030] As shown in Figure 4 Single layer graphene layer 4 has a thickness of 0.3 nm, and the graphene film covers directly above the interdigital electrode.
[0031] As shown in Figure 5 Gold nanoparticles modification layer 5 is spin-coated on the surface of single layer graphene layer 4 directly above, and has a thickness of 3-5 nm.
[0032] As shown in Figure 6 Perovskite light absorption layer 6 covers directly above gold nanoparticles modification layer 5, and is composed of a PbI 2 spin-coated layer and a FAI spin-coated layer from bottom to top, and has a thickness of 200-300 nm.
[0033] As shown in Figure 7 Hole accumulation layer 7 is a Spiro-OMeTAD spin-coated layer, has a thickness of 200-300 nm, and covers directly above the perovskite layer.
Claims
1. A plasmonic sensor based on gold nanoparticle modification of the interface between a perovskite layer and a graphene layer, characterized in that: Si substrate layer (1), SiO2 layer (2), Cr / Au electrode layer (3), single-layer graphene layer (4), gold nanoparticle modification layer (5), perovskite light absorption layer (6) and hole accumulation layer (7) are sequentially arranged from bottom to top. 2.The photoelectric sensor based on gold nanoparticle modified perovskite layer and graphene layer interface according to claim 1, characterized in that: The Si substrate layer (1) and the SiO2 layer (2) form a substrate structure, the substrate structure is composed of heavily doped n-type Si and a 250nm thermally grown SiO2 layer, and the thickness of the substrate structure is 0.3cm. 3.The photoelectric sensor based on gold nanoparticle modified perovskite layer and graphene layer interface according to claim 2, characterized in that: The Cr / Au electrode layer (3) is an interdigital electrode composed of Cr and Au alternately evaporated, the interdigital electrode is located at the center of the upper surface of the substrate structure, and the interdigital electrode is composed of 0.2mm of Cr, 0.2mm of Au, 0.2mm of Cr and 0.2mm of Au from bottom to top. 4.The photoelectric sensor based on gold nanoparticle modified perovskite layer and graphene layer interface according to claim 1, characterized in that: The thickness of the single-layer graphene layer (4) is 0.3nm. 5.The photoelectric sensor based on gold nanoparticle modified perovskite layer and graphene layer interface according to claim 1, wherein: The gold nanoparticle modification layer (5) is spin-coated on the surface of the single-layer graphene layer (4). 6.The photoelectric sensor based on gold nanoparticle modified perovskite layer and graphene layer interface according to claim 1, characterized in that: The perovskite light absorption layer (6) covers the gold nanoparticle modification layer (5) directly above, is composed of a PbI2 spin-coated layer and a FAI spin-coated layer from bottom to top, and the thickness of the perovskite light absorption layer (6) is 200-300nm. 7.The photoelectric sensor based on gold nanoparticle modified perovskite layer and graphene layer interface according to claim 1, characterized in that: The hole accumulation layer (7) is a Spiro-OMeTAD spin-coated layer, and the thickness is 200-300nm.