Semiconductor wafer boat capable of improving uniformity

Abstract

The utility model provides a semiconductor wafer boat capable of improving uniformity, which comprises a wafer boat, and an airflow guide assembly is fixedly arranged in one end of the wafer boat. A plurality of supporting assemblies are fixedly arranged in the wafer boat and evenly distributed at intervals in the vertical direction. Each supporting assembly comprises two supporting plates, the two supporting plates in the same supporting assembly are symmetrically arranged on the inner walls of the two sides of the wafer boat respectively, the supporting plates are arranged in the horizontal direction, and one end of each supporting plate faces the end, where the airflow guiding assembly is installed, of the wafer boat. According to the scheme, the wafers are transversely placed on the supporting plate and are parallel to the airflow, when the airflow flows and diffuses, the wafers are arranged at certain intervals, the airflow flowing through the wafers is laminar flow, a stable boundary layer is formed near the surfaces of the wafers, vortex is avoided, the uniformity in the diffusion process is improved, and the actual use effect is better.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor crystal boat technology, and specifically relates to a semiconductor crystal boat that improves uniformity. Background Technology

[0002] Semiconductor boats are crucial tools in semiconductor manufacturing, used to hold, transport, and process wafers, which are silicon wafers used to fabricate silicon semiconductor circuits. In semiconductor manufacturing, a gaseous diffusion method is used to dope the surface of silicon wafers. Many silicon wafers are placed on a boat, which is then placed inside a furnace tube. Impurity atoms are introduced into the silicon wafers through high-temperature diffusion. This method offers advantages such as simplicity, high purity, and low contamination. However, in existing boats, the wafers are often placed perpendicular to the gas flow. During diffusion, the wafers obstruct the airflow, resulting in poor diffusion uniformity.

[0003] The existing patent with publication number CN220189582U discloses a semiconductor vertical furnace crystal boat, which is equipped with an upper disk, a lower disk, support slots, connecting pillars, etc. By using uniformly distributed slot teeth and the slot shape being oblique, the contact between the wafer and the support slot is reduced, thereby reducing the risk of wafer scratches, increasing the stability of wafer placement, and allowing airflow to have more sufficient contact with the wafer.

[0004] However, in the above scheme, the wafer is placed perpendicular to the airflow, which causes the wafer to obstruct the flow of airflow and generate eddies. This prevents the airflow flowing over the wafer surface from forming a stable boundary layer, thereby reducing the uniformity of airflow diffusion and having certain limitations in practical use. Utility Model Content

[0005] To address the problems existing in the background art, this utility model provides a semiconductor crystal boat that improves uniformity.

[0006] To achieve the above objectives, the present invention provides the following technical solution:

[0007] A semiconductor boat for improving uniformity includes a boat, with an airflow guiding component fixedly installed inside one end of the boat; a plurality of support components are fixedly arranged inside the boat, the plurality of support components being evenly distributed at intervals along the vertical direction; each group of support components includes two support plates, the two support plates in the same group of support components being symmetrically arranged on the inner walls of both sides of the boat, the support plates being arranged in the horizontal direction and one end of each support plate facing the end of the boat where the airflow guiding component is installed.

[0008] Furthermore, a high-temperature gasket is fixedly installed on the top of each support plate, and the high-temperature gasket is arranged in the same direction as the support plate; several through holes are opened on each high-temperature gasket, and the several through holes are evenly distributed along the arrangement direction of the high-temperature gasket.

[0009] Furthermore, the airflow guiding component includes a first diffuser plate, a second diffuser plate, and a third diffuser plate. The first diffuser plate is located on the outermost side of the crystal boat, followed by the second diffuser plate and the third diffuser plate. A plurality of circumferentially distributed air holes are formed on the first diffuser plate, the second diffuser plate, and the third diffuser plate. The number of air holes on the first diffuser plate, the second diffuser plate, and the third diffuser plate increases sequentially, and the radius of the air holes decreases sequentially.

[0010] Furthermore, the thickness of the first diffuser, the second diffuser, and the third diffuser is 3mm, the spacing between the first diffuser and the second diffuser, as well as between the second diffuser and the third diffuser, is 30mm, and the first diffuser, the second diffuser, and the third diffuser are all made of quartz material.

[0011] This application has the following beneficial effects:

[0012] 1. In this solution, the wafer is placed horizontally on the support plate and arranged parallel to the airflow. When the airflow diffuses, the wafers are arranged at certain intervals. The airflow flowing between the wafers is laminar, forming a stable boundary layer near the wafer surface, avoiding the generation of eddies, thereby improving the uniformity of the diffusion process and achieving better results in actual use.

[0013] 2. Install a first diffuser plate, a second diffuser plate, and a third diffuser plate at the end of the airflow entering the crystal boat. The surface of each of the three diffusers plate has circumferentially distributed air holes. The number of air holes on the surface of the three diffusers plate increases in sequence, and the radius of the air holes decreases in sequence, so as to ensure that the airflow entering the crystal boat is uniform and further improve the uniformity of airflow diffusion inside the crystal boat.

[0014] 3. By placing high-temperature pads on the support plate, the stability of the wafer during placement is ensured. Furthermore, several through-holes are made in the high-temperature pads to allow process gases to contact the wafer surface as much as possible, resulting in more uniform contact and better practical performance. Attached Figure Description

[0015] The above and other objects, features, and advantages of the present invention will become readily understood by reading the following detailed description of exemplary embodiments with reference to the accompanying drawings. In the drawings, several embodiments of the present invention are shown by way of example and not limitation, and like or corresponding reference numerals denote like or corresponding parts, wherein:

[0016] Figure 1 This is a schematic diagram of the overall structure of this utility model;

[0017] Figure 2 This is a cross-sectional view of the utility model;

[0018] Figure 3 This is a schematic diagram of the through-hole distribution structure of this utility model.

[0019] Explanation of reference numerals in the attached figures:

[0020] 1. Crystal boat; 2. Vent; 3. Support plate; 4. High temperature gasket; 5. Through hole; 6. First diffuser plate; 7. Second diffuser plate; 8. Third diffuser plate. Detailed Implementation

[0021] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Those skilled in the art should understand that the embodiments described below are only some, not all, of the embodiments disclosed. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are within the scope of protection of the present utility model.

[0022] like Figures 1-3 As shown, the technical solution adopted by this utility model is as follows: a semiconductor crystal boat for improving uniformity, including a crystal boat 1, the crystal boat 1 is square and arranged laterally, both ends of the crystal boat 1 are open, and an airflow guiding component is fixedly installed inside one end of the crystal boat 1. The airflow guiding component is used to improve the uniformity of airflow into the crystal boat 1.

[0023] The airflow guiding assembly includes a first diffuser plate 6, a second diffuser plate 7, and a third diffuser plate 8. The first diffuser plate 6 is located on the outermost side of the crystal boat 1, followed by the second diffuser plate 7 and the third diffuser plate 8. The thickness of the first diffuser plate 6, the second diffuser plate 7, and the third diffuser plate 8 is 3mm. The distance between the first diffuser plate 6 and the second diffuser plate 7, as well as between the second diffuser plate 7 and the third diffuser plate 8, is 30mm. The first diffuser plate 6, the second diffuser plate 7, and the third diffuser plate 8 are all made of quartz material.

[0024] The first diffuser plate 6, the second diffuser plate 7, and the third diffuser plate 8 each have a number of circumferentially distributed air holes 2. The number of air holes 2 on the first diffuser plate 6, the second diffuser plate 7, and the third diffuser plate 8 increases sequentially, but the radius of the air holes 2 decreases sequentially, thereby ensuring that the airflow entering the crystal boat 1 is uniform, and thus improving the uniformity of airflow diffusion inside the crystal boat 1.

[0025] Several sets of support components are fixedly installed inside the crystal boat 1. The sets of support components are evenly distributed at intervals along the vertical direction. Each set of support components includes two support plates 3. The two support plates 3 in the same set of support components are symmetrically arranged on the inner walls of both sides of the crystal boat 1. The support plates 3 are arranged in the horizontal direction, and one end of each support plate 3 faces the end of the crystal boat 1 where the airflow guide component is installed.

[0026] A high-temperature gasket 4 is fixedly installed on the top of each support plate 3. The high-temperature gasket 4 is arranged in the same direction as the support plate 3, and several through holes 5 are opened on each high-temperature gasket 4. The several through holes 5 are evenly distributed along the arrangement direction of the high-temperature gasket 4.

[0027] High-temperature gaskets 4 are installed on the support plate 3 to ensure the stability of the wafer during placement. Since the wafer is parallel to the airflow, the airflow diffuses into the interior of the crystal boat 1 without obstruction, forming a stable boundary layer near the wafer. There are no eddies, resulting in good diffusion uniformity. At the same time, several through holes 5 are opened on the high-temperature gaskets 4 to allow the process gas to contact the wafer surface as much as possible, making the contact more uniform and improving the practical effect.

[0028] Working principle: When the wafer is placed on the high-temperature pad 4 on the top of the support plate 3, the gas or liquid source diffuses and the airflow passes through the air holes 2 on the first diffuser plate 6, the second diffuser plate 7 and the third diffuser plate 8 in sequence to achieve uniform flow, so that the airflow enters the interior of the crystal boat 1 evenly.

[0029] Because the wafers are spaced apart, the airflow between them is laminar, forming a stable boundary layer near the wafer surface. This prevents the generation of eddies and improves the uniformity of the diffusion process, resulting in better performance in practical applications. Simultaneously, several through-holes 5 on the high-temperature pad 4 allow the process gas to contact the wafer surface as much as possible, ensuring more uniform contact and further enhancing practical effectiveness.

[0030] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A semiconductor boat for improving uniformity, characterized in that, The system includes a crystal boat (1), with an airflow guiding component fixedly installed inside one end of the crystal boat (1); several support components are fixedly arranged inside the crystal boat (1), and the several support components are evenly distributed at intervals along the vertical direction; each set of support components includes two support plates (3), and the two support plates (3) in the same set of support components are symmetrically arranged on the inner walls of both sides of the crystal boat (1), the support plates (3) are arranged in the horizontal direction, and one end of each support plate (3) faces the end of the crystal boat (1) where the airflow guiding component is installed.

2. The semiconductor crystal boat for improving uniformity according to claim 1, characterized in that, A high-temperature gasket (4) is fixedly installed on the top of each support plate (3), and the high-temperature gasket (4) is arranged in the same direction as the support plate (3); several through holes (5) are opened on each high-temperature gasket (4), and the several through holes (5) are evenly distributed along the arrangement direction of the high-temperature gasket (4).

3. The semiconductor boat for improving uniformity according to claim 1, characterized in that, The airflow guiding component includes a first diffuser plate (6), a second diffuser plate (7), and a third diffuser plate (8). The first diffuser plate (6) is located on the outermost side of the crystal boat (1), followed by the second diffuser plate (7) and the third diffuser plate (8). Several circumferentially distributed air holes (2) are opened on the first diffuser plate (6), the second diffuser plate (7), and the third diffuser plate (8). The number of air holes (2) on the first diffuser plate (6), the second diffuser plate (7), and the third diffuser plate (8) increases sequentially, and the radius of the air holes (2) decreases sequentially.

4. The semiconductor boat for improving uniformity according to claim 3, characterized in that, The thickness of the first diffuser (6), the second diffuser (7) and the third diffuser (8) is 3mm. The spacing between the first diffuser (6) and the second diffuser (7) and the second diffuser (7) and the third diffuser (8) is 30mm. The first diffuser (6), the second diffuser (7) and the third diffuser (8) are all made of quartz material.

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