Discrete device

Abstract

The utility model relates to the technical field of semiconductors, and provides a discrete device which comprises a plastic package area and a main body area, the plastic package area is provided with a front heat dissipation area, a back heat dissipation area, a first pin area, a second pin area and a plastic package slotting area, and the plastic package slotting area is a groove transversely penetrating through the rear portion of the plastic package area. The first pin area comprises a connecting part and a first pin part, the upper part of the connecting part extends towards the left side and the right side to form the first pin part integrated with the connecting part, and the plastic packaging slotting area is in a sawtooth shape or a trapezoid shape; the main body area is plastically packaged in the plastic packaging area and comprises a front heat dissipation area and a back heat dissipation area, a step structure is arranged between the front heat dissipation area and the back heat dissipation area, and the tread of the step structure is a pressing table area; the plastic packaging slotting area and the pressing table area are used for increasing the creepage distance of the discrete device. According to the invention, higher power density is realized, the insulation capability of the discrete device is improved, the heat dissipation capability is enhanced, the bonding strength of the plastic package material and the frame is enhanced, and water vapor is prevented from entering.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a discrete device. BACKGROUND

[0002] Power semiconductors are key devices in the power electronics industry, and are widely used in industrial control, rail transportation, consumer electronics, new energy vehicles, and other fields. In the field of new energy vehicles, in order to solve the range anxiety of users, manufacturers pursue fast charging and super charging technologies to save charging time. To achieve fast charging and super charging, the power needs to be increased, which can be achieved by increasing the working voltage level or increasing the working current. Increasing the working voltage requires the power semiconductor to have stronger insulation capability, and increasing the working current requires it to have stronger heat dissipation capability.

[0003] US patent US10658276 discloses a device, but the creepage distance of the device is too short, which causes the device to be unable to work at high voltage. At the same time, the number of components of the device for combining with plastic packaging material is insufficient, which causes insufficient bonding strength. In addition, the lead frame of the device is too thick, the heat dissipation capability is weak, and the pins are not integrally designed, and the overcurrent capability is poor.

[0004] Chinese invention patent CN115472587A discloses a lead frame that can be compatible with large chips and large creepage distances, but the frame lacks a plastic packaging slot area, and the creepage distance is short.

[0005] Chinese invention patent CN116364673A discloses a TSOP packaging structure for a high-power chip, which is provided with a plurality of grooves in the second area, but the effect of increasing the creepage distance by the grooves is not obvious. UTILITARIAN CONTENT

[0006] In order to help solve the above technical problems, the present application provides a discrete device, which adopts the following technical scheme:

[0007] A discrete device, wherein the discrete device comprises:

[0008] The plastic packaging area is provided with a front surface heat dissipation area in the front part, a back surface heat dissipation area in the rear part, a first pin area in the upper part, and a second pin area connected in the lower part. A plastic packaging slot area is formed on one side of the back surface heat dissipation area close to the second pin area in the rear part of the plastic packaging area. The plastic packaging slot area is a groove transversely penetrating the rear part of the plastic packaging area. The first pin area comprises a connecting part and a first pin part. The upper part of the connecting part extends to the left and right sides to form the first pin part integrally connected with the connecting part. The shape of the plastic packaging slot area is sawtooth-shaped or trapezoidal.

[0009] The body area is plastic encapsulated in the plastic encapsulation area, and includes a heat dissipation area and the first pin area. The heat dissipation area includes the front heat dissipation area and the back heat dissipation area, and the front heat dissipation area and the back heat dissipation area are in a stepped structure. The tread of the stepped structure is a pressure platform area.

[0010] The plastic encapsulation slot area and the pressure platform area are used to increase the creepage distance of the discrete device.

[0011] Preferably, the lock glue grooves are arranged around the mounting area. The first lock glue hole is arranged on the side of the mounting area close to the first pin area. The second lock glue hole and the third lock glue hole are arranged on the end of the second pin area close to the body area, and are located inside the plastic encapsulation area.

[0012] Preferably, the connecting part connects the mounting area and the first pin part, and the first pin part is the first electrode of the discrete device.

[0013] Preferably, the second pin area is arranged separately from the body area. The second pin part and the third pin part are arranged on the end of the second pin area away from the body area, and are located outside the plastic encapsulation area. The second pin part is the second electrode of the discrete device, and the third pin part is the third electrode of the discrete device. The first pin part, the second pin part and the third pin part are used to carry the semiconductor device.

[0014] Preferably, the second pin part and the third pin part are arranged independently, and are used to carry three-pin semiconductor devices.

[0015] Preferably, the second pin part is connected to the third pin part, and is used to carry two-pin semiconductor devices.

[0016] In summary, the present application provides a discrete device with high power density, which can achieve higher power density under the same floor area. By optimizing the width of the pressure platform strip step of the frame and the slot width of the plastic encapsulation material, the creepage distance of the discrete device is increased, thereby improving the insulation capability of the discrete device, and the discrete device can work at a higher voltage level. By thinning the thickness of the frame, the heat dissipation capability is further enhanced, and the working current can be increased. At the same time, multiple lock glue grooves and lock glue holes are arranged to enhance the bonding strength of the plastic encapsulation material and the frame, prevent water vapor from entering, increase the reliability of the device, and increase the creepage distance by using a zigzag or trapezoidal shape in the slot area. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 It is a front view of the first embodiment of the discrete device of the present application.

[0018] Figure 2 It is a front view of the first embodiment of the discrete device of the present application. Figure 1 It is a structure schematic view of the body area and the second pin area in the embodiment shown.

[0019] Figure 3 It is a structure schematic view of the body area and the second pin area in the embodiment shown.Figure 1 Structure diagram of the embodiment shown;

[0020] Figure 4 For Figure 3 Partial enlarged view of the first embodiment of the plastic sealing slot area at A in the embodiment shown;

[0021] Figure 5 For Figure 3 Partial enlarged view of the second embodiment of the plastic sealing slot area at A in the embodiment shown;

[0022] Figure 6 For Figure 3 Side view of the embodiment shown;

[0023] Figure 7 Front view of the second embodiment of the discrete device of the present application.

[0024] Reference numerals: 10 - main body area; 11 - heat dissipation area; 110 - front heat dissipation area; 111 - back heat dissipation area; 112 - pressure platform area; 12 - first pin area; 120 - connecting part; 121 - first pin part; 20 - second pin area; 21 - second pin part; 22 - third pin part; 30 - plastic sealing area; 31 - plastic sealing slot area; 40 - glue locking groove; 41 - first glue locking hole; 42 - second glue locking hole; 43 - third glue locking hole; 44 - pin wire bonding area; 50 - chip mounting area. DETAILED DESCRIPTION

[0025] The present application will be further described below in conjunction with the drawings, and the structure and principles of the present application are very clear to those skilled in the art. It should be understood that the specific embodiments described herein are only used to explain the present application, and are not used to limit the present application.

[0026] Figure 1 Front view of the first embodiment of the discrete device of the present application, Figure 2 For Figure 1 Structure diagram of the main body area and the second pin area in the embodiment shown, Figure 3 For Figure 1 Structure diagram of the embodiment shown.

[0027] The discrete device of the present application comprises a plastic sealing area 30 and a main body area 10, the front of the plastic sealing area 30 is provided with a front heat dissipation area 110, the rear is provided with a back heat dissipation area 111, the upper part is provided with a first pin area 12, and the lower part is connected with a second pin area 20. On the rear of the plastic sealing area 30, the back heat dissipation area 111 is close to one side of the second pin area 20, and a plastic sealing slot area 31 is formed on the rear of the plastic sealing area 30. The main body area 10 is plastic sealed in the plastic sealing area 30, comprising a heat dissipation area 11 and a first pin area 12, the heat dissipation area 11 comprises a front heat dissipation area 110 and a back heat dissipation area 111, and the front heat dissipation area 110 and the back heat dissipation area 111 are in a stepped structure, and the tread of the stepped structure is a pressing table area 112. The first pin area 12 comprises a connecting part 120 and a first pin part 121, the upper part of the connecting part 120 extends to the left and right sides to form the first pin part 121 which is integral with the connecting part 120, the shape of the plastic sealing slot area 31 is sawtooth or trapezoidal, and the plastic sealing slot area 31 and the pressing table area 112 are used to increase the creepage distance of the discrete device. The creepage distance of the sawtooth or trapezoidal slot area 31 is increased by more than 50% than that of the ordinary slot area.

[0028] The locking glue groove 40 is arranged around the chip mounting area 50, the first locking glue hole 41 is arranged on the side of the chip mounting area 50 close to the first pin area 12, the second locking glue hole 42 and the third locking glue hole 43 are arranged on the end of the second pin area 20 close to the main body area 10, and the second locking glue hole 42 and the third locking glue hole 43 are located inside the plastic sealing area 30.

[0029] The first pin area 12 comprises a connecting part 120 and a first pin part 121, the connecting part 120 connects the chip mounting area 50 and the first pin part 121, and the first pin part 121 is the first electrode of the discrete device. The second pin area 20 is arranged separately from the main body area 10, the second pin area 20 is provided with a second pin part 21 and a third pin part 22 at the end away from the main body area 10, the second pin part 21 and the third pin part 22 are located outside the plastic sealing area 30, the second pin part 21 is the second electrode of the discrete device, the third pin part 22 is the third electrode of the discrete device, and the first pin part 121, the second pin part 21 and the third pin part 22 are used to carry the semiconductor device. The second pin part 21 and the third pin part 22 are independently arranged, used to carry three-pin semiconductor devices, and the second pin part 21 is provided with a pin wire bonding area 44 above.

[0030] Specifically, the discrete device includes a main body area 10, a second pin area 20, and a plastic sealing area 30. The main body area 10 includes a heat dissipation area 11 and a first pin area 12. The heat dissipation area 11 includes a front heat dissipation area 110, a back heat dissipation area 111, and a pressing platform area 112. The front heat dissipation area 110 has a mounting area 50, and the mounting area 50 is surrounded by a glue locking groove 40 and a first glue locking hole 41. The first pin area 12 includes a connecting part 120 and a first pin part 121. The connecting part 120 connects the mounting area 50 and the first pin part 121, and the first pin part 121 is a first electrode of the discrete device.

[0031] The second pin area 20 is separated from the main body area 10. The second pin area 20 includes a second pin part 21 and a third pin part 22. The second pin part 21 is a second electrode of the discrete device, and the third pin part 22 is a third electrode of the discrete device. The third pin part 22 has a second glue locking hole 42 and a third glue locking hole 43. The plastic sealing area 30 covers the main body area 10 and the second pin area 20, and includes a plastic sealing groove area 31.

[0032] It is to be noted that in the direct insertion package, the creepage distance is an important electrical safety parameter. Specifically, it refers to the shortest path length measured along the surface of the insulating material between the surface of the component or the pins. The pressing platform area 112 is a long step between the front heat dissipation area 110 and the back heat dissipation area 111, and the plastic sealing groove area 31 is a groove on one side of the back heat dissipation area 111. The width of the long step of the pressing platform area 112 and the width of the plastic sealing groove area 31 are controlled to increase the creepage distance and improve the insulation capability. The thickness of the front heat dissipation area 110 and the back heat dissipation area 111 constitutes the thickness of the heat dissipation area 11. The thickness of the heat dissipation area 11 can be thinned to enhance the heat dissipation capability. The pressing platform area 112, the glue locking groove 40, the first glue locking hole 41, the second glue locking hole 42, and the third glue locking hole 43 can make the plastic sealing area 30 and the main body area 10 and the second pin area 20 more closely combined, prevent water vapor from entering, and increase the reliability of the device.

[0033] The second pin area 20 includes the second pin part 21 and the third pin part 22. The second pin part 21 and the third pin part 22 are independent of each other and can carry three-pin semiconductor devices (MOSFET, IGBT).

[0034] Figure 4 For Figure 3 the first embodiment of the plastic sealing groove area at position A in the embodiment shown in the figure, Figure 5 for Figure 3 the second embodiment of the plastic sealing groove area at position A in the embodiment shown in the figure, Figure 6 for Figure 3 the side view of the embodiment shown in the figure, Figure 4 , Figure 5 and Figure 6It can be understood that the shape of the plastic sealing slot area 31 of the present application is sawtooth-shaped (as shown in Figure 4 or trapezoidal (as shown in Figure 5 , thereby increasing the creepage distance.

[0035] Figure 7 The front view of the second embodiment of the discrete device of the present application.

[0036] As can be seen from Figure 7 , the difference between the embodiment shown in Figure 7 and the embodiment shown in Figure 1 is that the pin wire area 44 is omitted in Figure 7 . The second pin part 21 is connected to the third pin part 22 for mounting two-pin semiconductor devices. The second pin part 21 and the third pin part 22 can be connected together and can mount two-pin semiconductor devices (DIODE).

[0037] In summary, the present application has the following advantages:

[0038] 1. The discrete device is provided with a pressure platform area 112 and a plastic sealing slot area 31, which can flexibly adjust the width of the pressure platform area 112 and the plastic sealing slot area 31 to meet the creepage distance requirements according to the creepage distance requirements of the working voltage of the discrete device, thereby enhancing the insulation capability.

[0039] 2. The thickness of the heat dissipation area 11 can be thinned to enhance the heat dissipation capability.

[0040] 3. The insulation capability and heat dissipation capability of the discrete device are enhanced, which can make the discrete device work at a higher voltage level and increase the current, thereby improving the power density of the discrete device.

[0041] 4. The discrete device is provided with a glue locking groove 40 and a glue locking hole, which can enhance the bonding strength of the plastic sealing area 30 and the main body area 10, the second pin area 20, prevent water vapor from entering, and increase the reliability of the device.

[0042] 5. The plastic sealing slot area 31 adopts a sawtooth shape or a trapezoidal shape, and the creepage distance is increased by more than 50% compared with the ordinary plastic sealing slot area.

Claims

1. A discrete device characterized by, The discrete device comprises: The plastic sealing area is provided with a front-face heat dissipation area, a back-face heat dissipation area, a first pin area and a second pin area. A plastic sealing groove area is formed on the back of the plastic sealing area, near the side of the back-face heat dissipation area away from the second pin area. The plastic sealing groove area is a groove transversely penetrating the back of the plastic sealing area. The first pin area comprises a connecting part and a first pin part. The upper part of the connecting part extends to the left and right sides to form the first pin part integrally connected with the connecting part. The plastic sealing groove area is in the shape of a sawtooth or a trapezoid. The main body area is plastic sealed in the plastic sealing area and comprises a heat dissipation area and the first pin area. The heat dissipation area comprises the front-face heat dissipation area and the back-face heat dissipation area. The front-face heat dissipation area and the back-face heat dissipation area are in a stepped structure. The tread of the stepped structure is a pressure platform area. The plastic sealing groove area and the pressure platform area are used to increase the creepage distance of the discrete device.

2. The discrete device of claim 1, wherein, The mounting area is provided with a locking glue groove around. The mounting area is provided with a first locking glue hole near the first pin area. The second pin area is provided with a second locking glue hole and a third locking glue hole near the main body area. The second locking glue hole and the third locking glue hole are located inside the plastic sealing area.

3. Discrete component according to claim 1 or 2, characterized in that The connecting part connects the mounting area and the first pin part. The first pin part is the first electrode of the discrete device.

4. The discrete device of claim 3, wherein, The second pin area is separately provided from the main body area. The second pin area is provided with a second pin part and a third pin part away from the main body area. The second pin part and the third pin part are located outside the plastic sealing area. The second pin part is the second electrode of the discrete device. The third pin part is the third electrode of the discrete device. The first pin part, the second pin part and the third pin part are used to carry semiconductor devices.

5. The discrete device of claim 4, wherein, The second pin part and the third pin part are independently provided and used to carry three-pin semiconductor devices.

6. The discrete device of claim 4, wherein, The second pin part is connected with the third pin part and used to carry two-pin semiconductor devices.

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