Wafer bearing device and spin-coating machine table
By introducing a temperature control plate and push rod into the wafer carrier device, precise temperature control of the wafer edge and center area is achieved, solving the problem of uneven film thickness caused by temperature differences during spin coating and improving wafer fabrication yield.
Patent Information
- Application Number
- CN202423303158.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-30
- Publication Date
- 2026-01-13
- Estimated Expiration
- 2034-12-30
AI Technical Summary
During the spin coating process, the temperature difference between the edge and center regions of the wafer is significant, resulting in uneven thickness of the photoresist or insulating dielectric film, which affects the manufacturing yield.
A wafer carrier device was designed, including a rotating disk and a temperature control disk. The temperature control disk achieves precise temperature control of the wafer edge and center area through a semiconductor thermoelectric module and a temperature sensor. The temperature control disk is driven to rise and fall by a first push rod to reduce temperature differences.
By controlling the temperature precisely with a temperature control plate, the temperature difference between the wafer edge and the center area is reduced, improving the uniformity of the photoresist or insulating dielectric film thickness and increasing the wafer fabrication yield.
Smart Images
Figure CN223788859U_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor technology, and more particularly to a wafer carrier device and a spin coater. Background Technology
[0002] In some semiconductor processes, wafer carriers and wafer rotation can be used to achieve uniform processing across all areas of the wafer. For example, in processes such as photoresist spin coating, photoresist drying, insulating dielectric spin coating, wafer cleaning, and spin drying, wafer rotation can improve manufacturing yield. Taking photoresist spin coating or insulating dielectric spin coating as examples, a wafer carrier supports and fixes the wafer, rotating it to ensure a more uniform distribution of the photoresist or insulating dielectric on the wafer surface, resulting in a more uniform film thickness across different parts of the wafer. Wafer carriers can integrate heating components to provide process temperature for the wafer. Uneven temperature distribution across different areas of the wafer carrier reduces wafer manufacturing yield. Therefore, there is still considerable room for improvement in wafer carriers in terms of temperature control and other aspects. Utility Model Content
[0003] According to some aspects of embodiments of the present disclosure, a wafer carrier device is provided, comprising:
[0004] A rotating disk for carrying a wafer; at least a portion of the edge of the wafer extends from the edge of the rotating disk along a horizontal side;
[0005] A rotating shaft is fixedly connected to the rotating disk; the rotating shaft rotates to drive the rotating disk to rotate.
[0006] A temperature control disk is fitted onto the outside of the rotating shaft; the middle area of the temperature control disk exposes the surface of the rotating disk that contacts the wafer, and at least a portion of the temperature control disk is fitted onto the outside of the rotating disk.
[0007] A first push rod is connected to the temperature control plate; the first push rod is configured to move up and down in the vertical direction to drive the temperature control plate to move up and down.
[0008] In some embodiments, the temperature control panel includes a first temperature control component and a plurality of temperature control zones; the first temperature control component includes:
[0009] Multiple semiconductor thermoelectric modules are located in different temperature control zones within the temperature control plate, and the semiconductor thermoelectric modules are spaced apart around the outer periphery of the rotating disk within the temperature control plate; and multiple temperature sensors are located in different temperature control zones of the temperature control plate.
[0010] In some embodiments, the wafer carrier further includes:
[0011] A first controller is coupled to the first temperature control component; the first controller is configured to control the heating or cooling of semiconductor thermoelectric modules in different temperature control zones based on temperature parameters fed back by the temperature sensor of the first temperature control component.
[0012] In some embodiments, the temperature control panel includes:
[0013] A first temperature control disk and a second temperature control disk; the first temperature control disk is sleeved on the outside of the second temperature control disk, the first temperature control disk exposes the rotating disk, and the second temperature control disk is covered by the rotating disk; the first temperature control disk is sleeved on the outside of the rotating disk, and at least a portion of the first temperature control disk is used to correspond to the wafer.
[0014] In some embodiments, the temperature control panel further includes:
[0015] A heat sink is located on the side of the semiconductor thermoelectric module away from the wafer; the interior of the heat sink is used to circulate coolant.
[0016] In some embodiments, the temperature control panel further includes:
[0017] A connecting component is located between the first temperature control plate and the second temperature control plate; the connecting component includes:
[0018] A connecting wire and a connecting pipe; the connecting wire is coupled to the semiconductor thermoelectric module in the first temperature control plate and the second temperature control plate; the connecting pipe connects to the heat dissipation sleeve of the first temperature control plate and the second temperature control plate.
[0019] In some embodiments, the temperature control plate further includes: an opening exposing a portion of the wafer; the opening being used for cleaning the wafer; and / or,
[0020] A position sensor is located on the side of the temperature control disk facing the wafer; the position sensor is configured to: detect the vertical distance between the temperature control disk and the wafer; and / or,
[0021] A lifting hole is used to install a second lifting rod; the second lifting rod is configured to move vertically up and down to drive the wafer up and down.
[0022] In some embodiments, the rotating disk includes: a second temperature control component, the second temperature control component including: a plurality of semiconductor thermoelectric modules located in different temperature control areas within the temperature control disk; the semiconductor thermoelectric modules are arc-shaped distributed within the rotating disk; and a plurality of temperature sensors located in different temperature control areas of the rotating disk; the wafer carrier further includes:
[0023] The power supply device is configured to supply power to the second temperature control component;
[0024] A control module is located on the rotating shaft and is wirelessly connected to the second temperature control component; the control module is configured to control the heating or cooling of the semiconductor thermoelectric modules in different temperature control zones according to the temperature parameters fed back by the temperature sensor of the second temperature control component.
[0025] In some embodiments, the rotating disk further includes:
[0026] Multiple heat dissipation fins are located on the side of the rotating disk away from the wafer; the heat dissipation fins are arranged around the outer periphery of the rotating shaft.
[0027] According to some aspects of embodiments of the present disclosure, a spin coating machine is provided, comprising: a wafer carrier as described above; and a process cavity; at least a portion of the wafer carrier is located in the process cavity.
[0028] This disclosure provides a wafer carrier device, comprising: a rotating disk carrying a wafer, with at least a portion of the wafer's edge extending horizontally from the edge of the rotating disk; a rotating shaft fixedly connected to a rotating shaft, the rotating shaft rotating to drive the rotating disk to rotate; a temperature control disk sleeved on the outside of the rotating shaft; the middle region of the temperature control disk exposing the surface of the rotating disk in contact with the wafer, at least a portion of the temperature control disk sleeved on the outside of the rotating disk, the temperature control disk being able to heat or cool the edge of the wafer to achieve temperature control of the wafer edge, reducing the temperature difference between the wafer edge region and the wafer center region, and improving wafer fabrication yield; and further comprising a first push rod fixedly connected to the temperature control disk, the first push rod moving up and down in the vertical direction to drive the temperature control disk to move up and down, facilitating access to the wafer for more precise temperature control while also reducing scratches on the wafer; the temperature control disk can be moved away from the wafer after the wafer fabrication process is completed, facilitating wafer pickup and reducing scratches on the wafer. Attached Figure Description
[0029] Figures 1 to 5 This is a schematic diagram of a wafer carrier device according to an embodiment of the present disclosure;
[0030] Figure 6 This is a schematic diagram of a spin coating machine according to an embodiment of the present disclosure. Detailed Implementation
[0031] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
[0032] It should be understood that when a component or layer is referred to as being "on," "adjacent to," "coupled to," or "coupled to" other components or layers, it may be directly on, adjacent to, coupled to, or coupled to other components or layers, or there may be intervening components or layers. Conversely, when a component is referred to as being "directly on," "directly adjacent to," "directly coupled to," or "directly coupled to" other components or layers, there are no intervening components or layers.
[0033] It should be understood that the phrases "some embodiments" or "an embodiment" throughout the specification mean that a specific feature, structure, or characteristic related to an embodiment is included in at least one embodiment of this disclosure. Therefore, "some embodiments" or "an embodiment" appearing throughout the specification do not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It should be understood that in the various embodiments of this disclosure, the sequence numbers of the above processes do not imply a sequential order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this disclosure.
[0034] For some semiconductor equipment, a wafer carrier stage is used to support or fix the wafer. Fixing methods include, but are not limited to, mechanical gripping, vacuum adsorption, and electrostatic adsorption. At least some components of the wafer carrier stage, such as suction cups and chucks, can fix the wafer. In some spin-coating machines for photoresist or insulating media, a rotating disk supporting the wafer rotates to ensure uniform distribution of the photoresist or insulating media on the wafer surface. The rotating disk can fix the wafer using vacuum adsorption. Specifically, a nozzle can be used to spray photoresist or insulating media onto the wafer surface. The wafer rotates under the drive of the rotating disk, and the photoresist and insulating media on the wafer spread out on the wafer surface under centrifugal force. Subsequently, the heating components integrated into the rotating disk or other heating components of the machine can be used to bake the wafer, causing the solvent of the photoresist or insulating media on the wafer to evaporate and solidify. Spin-coated insulating media can include materials such as silicon oxide, polyimide, organosilicon, and resin, as well as liquid precursors. After the solvent of the precursor is removed, it solidifies to form an insulating film on the wafer surface.
[0035] In some embodiments, in a wafer spin coater, the spin coater can spin coat photoresist, insulating dielectric, or other materials onto the wafer surface. To adjust the thickness of the photoresist, dielectric layer, or other films formed on the wafer, the rotation speed, rotation duration, acceleration, spin coater temperature, chamber temperature, and chamber exhaust size can be adjusted. Taking a spin coater for photoresist as an example, and considering the spin coater temperature as an example, the wafer temperature is positively correlated with the spin coater temperature. The wafer temperature affects the solvent evaporation rate of the photoresist, thereby affecting the viscosity or flowability of the wafer surface. The surface tension of the photoresist changes with temperature, resulting in changes in the thickness of the photoresist on the wafer surface. For example, when the temperature increases, the viscosity of the photoresist decreases, and the photoresist is centrifugally distributed outwards, resulting in a thinner photoresist film spread on the wafer.
[0036] In some specific embodiments, the edge areas of the wafer cannot be well heated and covered, and the edge areas of the wafer cool down faster, resulting in a large temperature distribution difference between the edge areas and the center areas of the wafer. This leads to a large difference in photoresist thickness between the edge areas and the center areas of the wafer, reducing the accuracy of subsequent photolithography and development, and reducing the manufacturing yield.
[0037] In view of this, embodiments of the present disclosure provide a wafer carrier device including a rotating disk. The wafer carrier device is adaptable to a spin coater and can be used for spin coating photoresist or insulating media. The wafer carrier device has a heating component that can control the temperature of both the central and edge regions of the wafer, reducing the temperature difference between the central and edge regions.
[0038] According to some aspects of embodiments of this disclosure, Figure 1 A wafer carrier device 100 is provided, comprising:
[0039] A rotating disk 110 is used to support a wafer 200; at least a portion of the edge of the wafer 200 extends horizontally from the edge of the rotating disk 110; a rotating shaft 101 is fixedly connected to the rotating disk 110 and can be fixedly connected to the center of the rotating disk 110; the rotating shaft 101 rotates to drive the rotating disk 110 to rotate; a temperature control disk 120 is sleeved on the outside of the rotating shaft 101; the middle area of the temperature control disk 120 exposes the surface of the rotating disk 110 that contacts the wafer 200, and at least a portion of the temperature control disk 120 is sleeved on the outside of the rotating disk 110; a first push rod 102 is connected to the temperature control disk 120; the first push rod 102 is configured to move vertically up and down to drive the temperature control disk 120 up and down. In the figure, the vertical direction can be the z-direction, which can be the thickness direction of the wafer 200, and can be a first direction; the horizontal direction can be the x-direction, which can be perpendicular to the z-direction, and can be a second direction; the y-direction can be horizontal, and can be perpendicular to the x-direction.
[0040] The wafer 200 can be picked up and transported by a robotic arm and placed on a rotating disk 110. The rotating disk 110 may have an adsorption port 111, which is connected to a vacuum pump. The vacuum pump evacuates the disk to adsorb the wafer 200 on the upper surface of the rotating disk 110. Alternatively, the rotating disk 110 may have electrodes that electrostatically adsorb the wafer 200 when energized. The adsorption port 111 can be connected to the vacuum pump through a pipe installed in the rotating shaft 101. There are no restrictions on the number or arrangement of the adsorption ports 111. The rotating shaft 101 extends along the z-direction, and one end of the rotating shaft 101 is fixedly connected to the rotating disk 110. The connection method may include, but is not limited to, bolts, nuts, or other fastening methods. The rotating shaft 101 is poweredly coupled to a motor 105. The motor 105 drives the rotating shaft 101 to rotate counterclockwise or clockwise on the horizontal plane, which in turn drives the rotating disk 110 to rotate and the wafer 200 to rotate, allowing the photoresist on the wafer 200 to be laid across the entire surface of the wafer 200. Temperature control components can be integrated inside the rotary disc 110, as described below. Figure 2 The second temperature control component 112 shown in the example can heat or cool, control the temperature of different areas of the rotating disk 110 to be equal or substantially equal, or within a certain temperature range; or it can realize temperature control of different areas of the rotating disk 110, adjust the temperature of different areas, and adjust the photoresist thickness on different areas of the wafer 200.
[0041] The dimension of the rotating disk 110 in the x-direction, or its diameter (radius) in the x-direction, can be smaller than the diameter of the wafer 200. When the wafer 200 is placed on the rotating disk 110, the center of the wafer 200 can be aligned with the center of the rotating disk 110, or may be offset within a certain error range. The edge of the wafer 200 extends from the edge of the rotating disk 110 along the x-direction or other horizontal directions, and at least a portion of the edge of the wafer 200 may not cover the rotating disk 110. This increases the clearance between the edge of the wafer 200 and the edge of the rotating disk 110, facilitating the robotic arm's pickup of the wafer 200 and reducing scratches and pickup failures. Since the rotating disk 110 does not cover the edge area of the wafer 200, the edge area of the wafer 200 will not be heated or cooled, resulting in the inability to finely adjust the temperature of the edge area. The temperature of the edge area of the wafer 200 may differ significantly from the temperature of the center area. A temperature control plate 120 can be set to correspond to the edge area of the wafer 200 to heat or cool the edge area of the wafer 200 in order to achieve temperature control of the edge area of the wafer 200.
[0042] In some embodiments, such as Figure 1As shown, the temperature control disk 120 can be circular, annular, or arc-shaped, adapting to the circular outline of the rotating disk 110. The temperature control disk 120 is sleeved on the outside of the rotating shaft 101. The temperature control disk 120 has an annular structure with a hollow center. The central area of the temperature control disk 120 exposes the contact surface between the rotating disk 110 and the wafer 200. The temperature control disk 120 can be sleeved on the outside of the rotating disk 110 on a horizontal side, or the temperature control disk 120 can be raised to be flush with or substantially flush with or not higher than the upper surface of the rotating disk 110, and then surround the rotating disk 110. In some other embodiments, the temperature control plate 120, in addition to having a portion located outside the rotating plate 110, also has another portion located below the rotating plate 110 and sleeved outside the rotating shaft 101; in this case, the two portions of the temperature control plate 120 can be considered as a whole, with the middle region of the temperature control plate 120 located below the rotating plate 110, while the middle region of the temperature control plate 120 still exposes the upper surface of the rotating plate 110. (See below) Figure 5 The first temperature control plate 121 is fitted over the outer side of the rotating plate 110, with the middle area of the first temperature control plate 121 exposing the rotating plate 110; the second temperature control plate 122 is located below the rotating plate 110.
[0043] In some embodiments, the temperature control disk 120 can be fixedly connected to the first push rod 102. The first push rod 102 can move up and down in the z-direction to drive the temperature control disk 120 to rise and fall. The temperature control disk 120 rises close to the edge of the wafer 200 without contacting the wafer 200 to avoid lifting or scratching the wafer 200. After the wafer 200 is spin-coated with photoresist or other processes are completed, the first push rod 102 descends away from the wafer 200, providing a safe distance or space for the robotic arm to pick up the wafer 200, reducing scratches on the wafer 200. The outer edge of the temperature control disk 120 can protrude horizontally from the edge of the wafer 200. The edge of the wafer 200 or the projection of the outer circumference of the wafer 200 in the z-direction falls on the temperature control disk 120, allowing the temperature control disk 120 to fully cover the edge of the wafer 200, which is beneficial for maintaining a uniform temperature at the edge of the wafer 200. The diameter corresponding to the outer contour pattern of the temperature control disk 120 is larger than the diameter of the wafer 200.
[0044] In some embodiments, refer to Figure 2 As shown, the temperature control plate 120 includes a first temperature control component 1211 and multiple temperature control areas 124; the first temperature control component 1211 includes: multiple semiconductor thermoelectric modules located in different temperature control areas 124 within the temperature control plate 120, the semiconductor thermoelectric modules being spaced apart around the outer periphery of the rotating disk 110 within the temperature control plate 120, such as being distributed in an arc shape; and multiple temperature sensors 125 located in different temperature control areas 124 within the temperature control plate 120.
[0045] Semiconductor thermoelectric modules can be like Figure 3As exemplified, the semiconductor thermoelectric module can be a connected P-type element 1212 and N-type element 1213; the P-type element 1212 comprises P-type semiconductor material, and the N-type element 1213 comprises N-type semiconductor material. When current flows from the junction of the N-type element 1213 to the P-type element 1212, heat is absorbed, forming a cold junction. Work is done by electrical energy to allow heat to flow from the cold junction to the hot junction, which can be used for cooling, such as... Figure 3 As shown; when current flows from the junction of P-type element 1212 to N-type element 1213, heat is released, and the positions of the hot and cold ends are interchanged. Figure 3 The cold end becomes the hot end, and can then be used for heating. Figure 3 The pair of P and N type components shown is just an example. More P and N type components can be connected in a PNPN configuration to accommodate a larger temperature control area. Figure 3 The semiconductor thermoelectric modules shown are only used to illustrate the temperature control principle of the temperature control plate 120 for cooling and heating in this embodiment of the present disclosure, and no specific restrictions are made on the number, specific shape, or specific material of the semiconductor thermoelectric modules.
[0046] Adapted to the shape of a 200-inch wafer. Figure 2 The first temperature control component 1211 may include multiple semiconductor thermoelectric modules, which are located in different areas of the temperature control disk 120. The semiconductor thermoelectric modules may be a continuous circle or a ring of multiple arcs spaced apart on the same circumference. The multiple rings of semiconductor thermoelectric modules may be arranged in concentric circles or concentric rings inside the temperature control disk 120, corresponding to different temperature control areas, and can control the temperature of different areas of the wafer 200. Temperature sensors 125 are also provided on different areas to obtain the temperature of that area.
[0047] The first temperature control component 1211 can be a sandwich structure, consisting of a cold-end substrate, P and N elements, and a hot-end substrate. Current flowing through the thermoelectric device achieves a one-end cooling and one-end heating effect. Located in different annular regions of the temperature control disk 120, it comprises multiple nested annular structures to achieve individual temperature control of different temperature control zones 124. The temperature sensor 125 of each temperature control zone 124 acquires temperature parameters and feeds them back to the controller. The controller adjusts the cooling of the high-temperature zone and / or changes the current direction to adjust the heating of the low-temperature zone based on the temperature differences in different temperature control zones 124 to achieve temperature balance in each temperature control zone. The temperature sensor 125 can be exposed on the upper surface of the temperature control disk 120, and can be flush with or not higher than the upper surface of the temperature control disk 120.
[0048] In some embodiments, refer to Figure 2As shown, a heat-conducting plate 142 can be provided on the semiconductor thermoelectric module to improve heat transfer between the first temperature control component 1211 and the wafer 200; a heat-conducting plate 142 can be provided at the bottom of the semiconductor thermoelectric module to improve bottom heat dissipation. Thermal grease can be applied between the heat-conducting plate 142 and the semiconductor thermoelectric module to improve heat transfer performance. Figure 3 The space between the P-type element 1212 and the N-type element 1213 is filled with a low thermal conductivity material as an insulation layer 141 to reduce heat transfer between the cold end and the hot end, thereby improving heat transfer to the wafer 200.
[0049] In some embodiments, refer to Figure 2 As shown, the wafer 200 carrier device 100 further includes: a first controller 131, coupled to a first temperature control component 1211; the first controller 131 is configured to: control the heating or cooling of semiconductor thermoelectric modules in different temperature control zones 124 according to temperature parameters fed back by temperature sensors 125 of the first temperature control component 1211. The first controller 131 can be coupled to the first temperature control component 1211 via wires. The first controller 131 can receive temperature parameters detected by different temperature sensors 125, compare the temperatures of different temperature control zones 124, and control the heating or cooling of semiconductor thermoelectric modules in different temperature control zones 124, including controlling the change of current direction and current magnitude, so that the semiconductor thermoelectric modules in different temperature control zones 124 reach their target temperature range. The target temperatures of the semiconductor thermoelectric modules corresponding to different temperature control zones 124 can be the same or different to meet the temperature requirements of different areas of the wafer 200.
[0050] In some embodiments, refer to Figure 4 The diagram shows the horizontal layout of the temperature control plate 120 and the rotating plate 110. After the temperature control plate 120 rises to the target position, it can be fitted onto the outside of the rotating plate 110. The gap between the temperature control plate 120 and the rotating plate 110 is not shown. The boundary between the temperature control plate 120 and the rotating plate 110 is represented by a circle O1. A gap may exist at the position of circle O1. Figure 4 In the process, the temperature control panel 120 may include different temperature control areas 124. The temperature control area 124 is equipped with a semiconductor thermoelectric module or a first temperature control component 1211. The temperature control area 124 is provided with mounting holes for mounting a temperature sensor 125. The temperature sensor 125 feeds back temperature parameters for the first controller 131 to use. Figure 4 The example shows multiple annular regions arranged in concentric circles on the upper surface of the temperature control plate 120. In other embodiments, more annular regions may be arranged. Each annular region may include arc-shaped sub-regions arranged at intervals on a circumference. Each arc-shaped sub-region can be regarded as a temperature control region 124, which is equipped with an independently temperature-controlled semiconductor thermoelectric module. This enables more precise temperature control of the wafer 200.
[0051] In some embodiments, the temperature sensor 125 may be disposed in the mounting hole of each temperature control zone 124, and the temperature sensor 125 may not be higher than the upper surface of the temperature control plate 120. The connection line between the temperature sensor 125 and the first controller 131 may be disposed inside the temperature control plate 120.
[0052] In some embodiments, refer to Figure 4 As shown, the temperature control plate 120 further includes: an opening exposing a portion of the wafer 200; the opening for cleaning the wafer 200; and / or, a position sensor 123 located on the side of the temperature control plate 120 facing the wafer 200; the position sensor 123 is configured to detect the vertical distance between the temperature control plate 120 and the wafer 200; and / or, a lifting hole for mounting a second lifting rod 103; the second lifting rod 103 is configured to move vertically up and down to move the wafer 200 up and down. The temperature control plate 120 may include a second lifting rod 103 located within the temperature control plate 120; the second lifting rod 103 is configured to move vertically up and down to move the wafer 200 up and down. Alternatively, the temperature control plate 120 has a through mounting hole as a lifting hole, and the second lifting rod 103 penetrates the temperature control plate 120 to lift the wafer 200.
[0053] Reference Figure 4 As shown, the opening may include a notch 126 or a notch located at the edge of the temperature control disk 120, and may include a through hole 127 located in the middle area of the temperature control disk 120; when the wafer 200 is carried on the rotating disk 110, the lower surface of the wafer 200 (the back side of the wafer 200) may cover the notch 126 and the through hole 127, and the notch 126 and the through hole 127 expose a part of the wafer 200; the nozzle may be used to rinse the front or back edge of the wafer 200 by aiming at the notch 126, and to rinse the back side of the wafer 200 by aiming at the through hole 127, and the rotating disk 110 continues to rotate when the nozzle rinses the wafer 200.
[0054] A position sensor 123 can be installed at the edge of the temperature control plate 120. The position sensor 123 may include a photoelectric sensor, which can determine the vertical distance between the temperature control plate 120 and the wafer 200 by emitting light signals and receiving the reflected signals of the light signals on the back of the wafer 200. When the temperature control plate 120 rises to the target distance, it stops rising to avoid scratching the wafer 200. The position sensor 123 can be installed in a corresponding mounting hole. The position sensor 123 can be flush with the upper surface of the temperature control plate 120 or protrude from the upper surface of the temperature control plate 120 by a small distance. A mounting hole for installing a second push rod 103 can be provided in the central area of the temperature control plate 120. The second push rod 103 is located in or through the temperature control plate 120 and rises and falls under the drive of a motor, protruding from the temperature control plate 120 or falling back into the temperature control plate 120. The second push rod 103 descends to be flush with or below the surface of the temperature control plate 120, allowing the wafer 200 to be placed on the rotating disk 110 for adsorption. After photoresist spin coating or other processes are completed on the upper surface of the wafer 200, the rotating disk 110 releases the adsorption, and the second push rod 103 rises to lift the wafer 200, moving it away from the rotating disk 110, facilitating the robotic arm to pick up and transfer the wafer 200. In some other embodiments, the second push rod 103 may be disposed within the rotating disk 110, rising and falling within the rotating disk 110 to protrude from the upper surface of the rotating disk 110 to lift the wafer 200.
[0055] In some embodiments, Figure 4 As shown, an adsorption port 111 can be provided at the center of the rotating disk 110. The adsorption port 111 is connected to a vacuum pump, which draws a vacuum to adsorb the wafer 200 on the upper surface of the rotating disk 110.
[0056] In some embodiments, refer to Figure 2 As shown, a temperature control component may be integrated within the rotating disk 110, or a temperature control component may be disposed below the rotating disk 110. In some embodiments, refer to Figure 5 As shown, the temperature control disk 120 includes: a first temperature control disk 121 and a second temperature control disk 122; the first temperature control disk 121 is sleeved on the outside of the second temperature control disk 122, the first temperature control disk 121 exposes the rotating disk 110, and the second temperature control disk 122 is covered by the rotating disk 110; the first temperature control disk 121 is sleeved on the outside of the rotating disk 110, at least a portion of the first temperature control disk 121 is used to correspond to the wafer 200, and at least a portion of the first temperature control disk 121 can be covered by the edge of the wafer 200.
[0057] The first temperature control panel 121 and the second temperature control panel 122 can be independent components that are not connected to each other, or they can be a whole temperature control panel 120, with the temperature regulated by a single controller to achieve unified temperature control across different areas. The arrangement of the first temperature control component 1211 of the first temperature control panel 121 can be referred to... Figure 4As shown, the second temperature control plate 122 can be sleeved between the rotating shaft 101 and the first temperature control plate 121. The rotating shaft 101, the second temperature control plate 122, and the first temperature control plate 121 are coaxially sleeved sequentially. The temperature control area 124 of the second temperature control plate 122 can be set with reference to the first temperature control plate 121, and is a multi-ringed annular temperature control area. The first temperature control plate 121 has an annular structure, and the inner ring area in the middle exposes or accommodates the rotating disk 110 and the second temperature control plate 122. The second temperature control plate 122 is located below the rotating disk 110.
[0058] In some embodiments, refer to Figure 2 and Figure 5 As shown, the temperature control panel 120 also includes a heat sink 1214, located on the side of the semiconductor thermoelectric module away from the wafer 200; the heat sink 1214 is used to circulate coolant. Liquid coolant, such as circulating water, or gaseous coolant can be circulated into the heat sink 1214 for heat dissipation of the semiconductor thermoelectric film blocks inside each temperature control panel 120. The bottom of the heat sink 1214 has a circulation port 1215 for coolant circulation.
[0059] In some embodiments, refer to Figure 5 As shown, the temperature control plate 120 further includes a connector 160 located between the first temperature control plate 121 and the second temperature control plate 122. The connector 160 includes a connecting wire and a connecting pipe. The connecting wire is coupled to the semiconductor thermoelectric modules in the first temperature control plate 121 and the second temperature control plate 122. The connecting pipe connects to the heat dissipation sleeves 1214 of the first temperature control plate 121 and the second temperature control plate 122. The semiconductor thermoelectric module and temperature sensor 125 of the first temperature control plate 121 and the semiconductor thermoelectric module and temperature sensor 125 of the second temperature control plate 122 are connected to the first controller 131. The first controller 131 adjusts the temperature or heat output of the heat control components based on the temperature differences of different temperature control zones 124. The heat dissipation sleeves 1214 of the two temperature control plates 120 are connected and share a coolant circulation path, improving circulation efficiency. The first controller 131 can be coupled to the temperature control components in the first temperature control plate 121 or the second temperature control plate 122 to achieve overall control of the two temperature control plates 120.
[0060] In some embodiments, refer to Figure 5As shown, the mechanical connection between the connector 160 and the first temperature control plate 121 and the second temperature control plate 122 can be a rigid connection or a flexible connection. When the first temperature control plate 121 and the second temperature control plate 122 are rigidly connected through the connector 160, the two temperature control plates 120 can rise and fall simultaneously. The horizontal height of the upper surface of the second temperature control plate 122 is lower than the horizontal height of the upper surface of the first temperature control plate 121. The rising and falling of the two temperature control plates 120 can be controlled by a push rod. For example, the first push rod 102 can be fixedly connected to the first temperature control plate 121. The first push rod 102 drives the first temperature control plate 121 to rise and fall, and the first temperature control plate 121 drives the second temperature control plate 122 to rise and fall simultaneously. Position sensors 123 can be set on the upper surface of the first temperature control plate 121 and the upper surface of the second temperature control plate 122. When either position sensor 123 detects that the vertical distance to the wafer 200 has reached the target distance, the first push rod 102 stops rising.
[0061] In some embodiments, the second temperature control plate 122 may not be raised or lowered. The first temperature control plate 121 and the second temperature control plate 122 are flexibly and movably connected by a connector 160, and the first push rod 102 drives the first temperature control plate 121 to rise or fall.
[0062] In some embodiments, refer to Figure 2 and Figure 4 As shown, the rotating disk 110 includes: a second temperature control assembly 112, which includes: multiple semiconductor thermoelectric modules located in different temperature control areas 124 within the temperature control disk 120; the semiconductor thermoelectric modules are arc-shaped distributed within the rotating disk 110; and includes multiple temperature sensors 125 located in different temperature control areas 124 of the rotating disk 110; the wafer 200 carrier device 100 also includes: reference Figure 2 As shown, the power supply device, for example Figure 2 Wireless power supply device 150 or Figure 1 The contact brush 104 is configured to power the second temperature control component 112; the control module is located on the rotating shaft 101 and is wirelessly connected to the second temperature control component 112; the control module is configured to control the heating or cooling of the semiconductor thermoelectric modules in different temperature control zones 124 according to the temperature parameters fed back by the temperature sensor 125 of the second temperature control component 112.
[0063] Reference Figure 2 As shown, a second temperature control component 112 can be integrated inside the rotating disk 110, and the second temperature control component 112 may include multiple semiconductor thermoelectric modules; the temperature control area 124 of the rotating disk 110 can be as follows: Figure 4As illustrated, a semiconductor thermoelectric module can be installed in each temperature control zone 124, and each temperature control zone 124 has mounting holes for mounting a temperature sensor 125. The temperature sensor 125 feeds back temperature parameters for the temperature controller to use. The control module may include a second controller 132 and a wireless communication module 133. The second controller 132 and the wireless communication module 133 are mounted on the rotation axis 101 and are symmetrical about the center of the rotation axis 101. The second controller 132 and the wireless communication module 133 can be connected via signal lines. The temperature sensor 125 of the second temperature control component 112 is wirelessly connected to the wireless communication module 133, and the wireless communication module 133 receives the temperature parameters from the temperature sensor 125. A receiving component may be integrated inside the rotating disk 110. The receiving component may include a coil and be used to receive a magnetic field to generate an induced current to power the second temperature control component 112. To improve the power supply stability to the second temperature control component 112 in the rotating disk 110, a rechargeable battery can be integrated into the rotating disk 110 or on the rotating shaft 101. The battery is first powered by the contact brush 104 or the electromagnetic induction coil of the wireless power supply device 150, and then the battery powers the second temperature control component 112 in the rotating disk 110, and can also power the control module.
[0064] In some embodiments, refer to Figure 1 As illustrated, the second temperature control component 112 inside the rotating disk 110 can be powered by the contact brush 104. The rotating disk 110 is powered by the motor 105 through the rotating shaft 101. When the rotating shaft 101 rotates, the positive and negative poles of the contact brush 104 can be staggered on the rotating shaft 101. The rotating shaft 101 has mounting holes inside to facilitate the routing of power supply lines.
[0065] In some embodiments, refer to Figure 2 As shown, the rotating disk 110 also includes a plurality of heat dissipation fins 113 located on the side of the rotating disk 110 away from the wafer 200; the heat dissipation fins 113 are arranged circumferentially and can be arranged around the outer periphery of the rotation axis 101. The spiral heat dissipation fins 113 arranged on the lower surface of the rotating disk 110 increase the heat dissipation area, and the spiral direction of the fins is adapted to the rotation direction to reduce wind resistance and improve heat dissipation efficiency. The heat dissipation fins 113 can be arranged circumferentially, and can be arranged in concentric circles.
[0066] According to some aspects of embodiments of this disclosure, Figure 6 A spin coating machine 10 is provided, including: a wafer 200 carrier 100; and a process cavity 300; at least a portion of the wafer 200 carrier 100 is located in the process cavity 300. The wafer 200 carrier 100 may include... Figure 1 , Figure 2 , Figure 4 as well as Figure 5The exemplified wafer 200 carrier 10; the spin coater 10 is adaptable for coating photoresist or insulating medium on the surface of the wafer 200; the spin coater 10 may also include a robotic arm for picking up and transferring the wafer 200, and may also include a motor 105 poweredly coupled to a rotation axis 101, the motor 105 being located outside or inside the process cavity 300; it also includes a liquid supply device 301 and a cleaning device 302, the liquid supply device 301 providing photoresist to the surface of the wafer 200; the nozzle of the cleaning device 302 can be aligned with... Figure 4 The notch 126 shown is used to rinse the back or front edge of the wafer 200 to reduce excessive photoresist residue; or the nozzle of the cleaning device 302 can be aligned with... Figure 4 The through-hole 127 shown is used to rinse the back side of the wafer 200. The rotating disk 110 remains rotating while the nozzle rinses the wafer 200. The cleaning apparatus 302 may include multiple conduits and multiple nozzles respectively aligned with... Figure 4 The notch 126 and the through hole 127 are located in the middle; or the cleaning device 302 may include a movable nozzle that moves to align with the notch 126 and the through hole 127.
[0067] In some embodiments, taking the photoresist spin coater 10 as an example, the temperature control plate 120 and the rotating plate 110 of the wafer 200 carrier 100 are set to and reach the target temperature, including heating or cooling different temperature control zones 124 to match the target temperature range; the robotic arm is controlled to pick up the wafer 200 and place it on the upper surface of the rotating plate 110, and a vacuum adsorption action is initiated to fix the wafer 200; the first push rod 102 is controlled to lift the temperature control plate 120, and the temperature control plate 120 is controlled to stop at the target position by the position sensor, and the temperature control plate 120 does not contact the wafer 200; the liquid supply device 301 is controlled to spray photoresist onto the upper surface of the wafer 200, and the rotating plate 110 rotates to spin coat the wafer 200. Photoresist film layer; the photoresist can be heat-treated using a temperature control plate 120, a rotating plate 110, or other heating devices to dry and solidify it; the first push rod 102 drives the temperature control plate 120 to descend, and the temperature control plate 120 can prepare the temperature required for the next wafer 200; the cleaning device 302 can be used to clean the front and back edges of the wafer 200 by aligning it with the opening of the temperature control plate 120, and to clean the back of the wafer 200; the vacuum at the adsorption port 111 is broken, so that the wafer 200 is de-adsorbed on the upper surface of the rotating plate 110, and the second push rod 103 is controlled to rise upward to separate the wafer 200 from the rotating plate 110, and the robotic arm is controlled to pick up the wafer 200 from the rotating plate 110 and transfer it.
[0068] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure.
Claims
1. A wafer carrier device, characterized in that, include: A rotating disk for carrying a wafer; at least a portion of the edge of the wafer extends from the edge of the rotating disk along a horizontal side; A rotating shaft is fixedly connected to the rotating disk; the rotating shaft rotates to drive the rotating disk to rotate. A temperature control disk is fitted onto the outside of the rotating shaft; the middle area of the temperature control disk exposes the surface of the rotating disk that contacts the wafer, and at least a portion of the temperature control disk is fitted onto the outside of the rotating disk. A first push rod is connected to the temperature control plate; the first push rod is configured to move up and down in the vertical direction to drive the temperature control plate to move up and down.
2. The wafer carrier device according to claim 1, characterized in that, The temperature control panel includes a first temperature control component and multiple temperature control zones; the first temperature control component includes: Multiple semiconductor thermoelectric modules are located in different temperature control zones within the temperature control plate, and the semiconductor thermoelectric modules are spaced apart around the outer periphery of the rotating disk within the temperature control plate; and multiple temperature sensors are located in different temperature control zones of the temperature control plate.
3. The wafer carrier device according to claim 2, characterized in that, The wafer carrier device further includes: A first controller is coupled to the first temperature control component; the first controller is configured to control the heating or cooling of semiconductor thermoelectric modules in different temperature control zones based on temperature parameters fed back by the temperature sensor of the first temperature control component.
4. The wafer carrier device according to claim 2, characterized in that, The temperature control panel includes: A first temperature control disk and a second temperature control disk; the first temperature control disk is sleeved on the outside of the second temperature control disk, the first temperature control disk exposes the rotating disk, and the second temperature control disk is covered by the rotating disk; the first temperature control disk is sleeved on the outside of the rotating disk, and at least a portion of the first temperature control disk is used to correspond to the wafer.
5. The wafer carrier device according to claim 4, characterized in that, The temperature control panel also includes: A heat sink is located on the side of the semiconductor thermoelectric module away from the wafer; the interior of the heat sink is used to circulate coolant.
6. The wafer carrier device according to claim 5, characterized in that, The temperature control panel also includes: A connecting component is located between the first temperature control plate and the second temperature control plate; the connecting component includes: A connecting wire and a connecting pipe; the connecting wire is coupled to the semiconductor thermoelectric module in the first temperature control plate and the second temperature control plate; the connecting pipe connects to the heat dissipation sleeve of the first temperature control plate and the second temperature control plate.
7. The wafer carrier device according to any one of claims 1-6, characterized in that, The temperature control panel also includes: An opening that exposes a portion of the wafer; the opening is used for cleaning the wafer; and / or, A position sensor is located on the side of the temperature control disk facing the wafer; the position sensor is configured to: detect the vertical distance between the temperature control disk and the wafer; and / or, A lifting hole is used to install a second lifting rod; the second lifting rod is configured to move vertically up and down to drive the wafer up and down.
8. The wafer carrier device according to claim 1, characterized in that, The rotating disk includes: The second temperature control component includes: multiple semiconductor thermoelectric modules located in different temperature control areas within the temperature control disk; the semiconductor thermoelectric modules are arranged in an arc shape within the rotating disk; and multiple temperature sensors are located in different temperature control areas of the rotating disk; the wafer carrier further includes: The power supply device is configured to supply power to the second temperature control component; A control module is located on the rotating shaft and is wirelessly connected to the second temperature control component; the control module is configured to control the heating or cooling of the semiconductor thermoelectric modules in different temperature control zones according to the temperature parameters fed back by the temperature sensor of the second temperature control component.
9. The wafer carrier device according to claim 1, characterized in that, The rotating disk also includes: Multiple heat dissipation fins are located on the side of the rotating disk away from the wafer; the heat dissipation fins are arranged around the outer periphery of the rotating shaft.
10. A spin coating machine, characterized in that, include: The wafer carrier device as described in any one of claims 1 to 9; and process chambers; At least a portion of the wafer carrier is located within the process cavity.