Wafer cleaning device

Abstract

The utility model provides a wafer cleaning device. The wafer cleaning device comprises a cleaning tank, a cover body, a wafer mounting area and a heater, the cleaning tank comprises a bottom wall and a side wall, the wafer mounting area is arranged on the inner side of the bottom wall, the heater is arranged on the inner side of the side wall, the cover body covers the cleaning tank, and exhaust holes are formed in the cover body. The device solves the problems of non-uniform concentrated sulfuric acid heat distribution and difficult heating in wafer static cleaning, and reduces the cost of static experimental equipment at the same time.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor production, especially relates to a wafer cleaning device. BACKGROUND

[0002] Semiconductor devices are widely used in computers, communications, consumer electronics, automotive electronics and many other fields. Wafers are silicon wafers used to make semiconductor integrated circuits. In the production process of wafers, multiple complex processes are involved, including etching, exposure, cleaning, etc. In the production process, even extremely tiny particle impurities (such as dust, metal chips, etc.) attached to the surface of the wafer can cause circuit short-circuit, open-circuit or product performance degradation in subsequent photolithography, etching, deposition, etc. For example, in the photolithography process, particles can block light, causing inaccurate pattern transfer, thereby affecting the precision and performance of the chip. For another example, the residues of etchants, cleaning agents, etc. on the wafer surface can change the chemical properties of the wafer surface, affecting the deposition and bonding of subsequent materials, resulting in poor electrical performance of semiconductor devices.

[0003] Early dynamic cleaning methods, such as spray cleaning and ultrasonic cleaning, can remove impurities to some extent. However, spray cleaning may result in unstable cleaning effect due to clogging of the spray head or uneven distribution of the liquid; ultrasonic cleaning may cause physical damage to fragile semiconductor structures. Current static cleaning methods mostly use overflow sulfuric acid tanks, such as tank cleaning machines that use internal circulation online heating of sulfuric acid. The heated sulfuric acid is overflowed from the inner tank to the outer tank to clean the wafer. However, this system has multiple structures and pipelines, expensive accessories, is not conducive to cleaning the tank, and has high maintenance costs.

[0004] Therefore, a wafer cleaning device is provided, which is low in cost and energy consumption, convenient to use and maintain, suitable for static cleaning process in the back-end of the semiconductor, and can solve the problems of uneven heating and acid mist overflow due to uneven heat distribution of concentrated sulfuric acid in wafer static cleaning. SUMMARY

[0005] The utility model provides a wafer cleaning device, which comprises a cleaning tank, a cover, a wafer mounting area and a heater. The cleaning tank comprises a bottom wall and a side wall. The wafer mounting area is arranged on the inner side of the bottom wall. The heater is arranged on the inner side of the side wall. The cover is arranged above the cleaning tank. The cover is provided with an exhaust hole.

[0006] In some embodiments, the heater is provided with at least three heating coverage points along the circumferential side of the cleaning tank. The difference between the distances of any two of the at least three heating coverage points is less than 20 mm.

[0007] In some embodiments, the distance between the highest heating coverage point and the lowest heating coverage point of the heater along the depth direction of the cleaning tank is not less than 100 mm.

[0008] In some embodiments, the distance between the highest heating coverage point and the lowest heating coverage point ranges from 100 mm to 220 mm.

[0009] In some embodiments, the heater comprises a plurality of heating rods, each of which comprises a heating section extending along the depth direction of the sidewall of the cleaning tank, the plurality of heating rods are distributed along the circumferential side of the cleaning tank, and the difference between the distances between any two of the plurality of heating rods is less than 20 mm.

[0010] In some embodiments, the heating rod is a U-shaped heating pipe, and a plurality of the U-shaped heating pipes are uniformly distributed along the circumferential side of the cleaning tank.

[0011] In some embodiments, the heater comprises a plurality of annular heating pipes, the annular heating pipes are wrapped around the sidewall, and the plurality of annular heating pipes are distributed along the depth direction of the inner side of the sidewall.

[0012] In some embodiments, the device further comprises a temperature detection assembly, the temperature detection assembly is arranged on the inner side of the sidewall, and the temperature detection assembly is located below the highest heating coverage point of the heater.

[0013] In some embodiments, the device further comprises a tool, the tool is arranged in the wafer mounting area.

[0014] In some embodiments, the projection of the heater on the bottom wall plane of the cleaning tank has a first projection center, the projection of the tool on the bottom wall plane of the cleaning tank has a second projection center, and the distance between the first projection center and the second projection center is less than 20 mm.

[0015] In some embodiments, an auxiliary heat source is arranged on the bottom wall below the tool, the coverage range of the auxiliary heat source on the bottom wall is less than half of the projection range of the wafer on the bottom wall.

[0016] In some embodiments, the heating temperature of the auxiliary heat source is less than the heating temperature of the heater.

[0017] In some embodiments, the device further comprises a negative pressure assembly, the negative pressure assembly is in communication with the exhaust hole.

[0018] In some embodiments, the device further comprises a pressure sensor, the pressure sensor is arranged on the inner side of the sidewall.

[0019] In some embodiments, an outer side of the sidewall is provided with a folded edge, the folded edge and the sidewall form a containing groove, the containing groove is configured to contain a sealing liquid.

[0020] In some embodiments, the device further comprises a first liquid discharge assembly, a liquid discharge hole is formed in the containing groove, and the first liquid discharge assembly is in communication with the liquid discharge hole.

[0021] In some embodiments, the device further comprises a second liquid discharge assembly, a waste liquid hole is formed in the bottom wall of the cleaning groove, and the second liquid discharge assembly is in communication with the waste liquid hole.

[0022] In some embodiments, the device further comprises a support leg, and the support leg is arranged at the bottom of the cleaning groove. BRIEF DESCRIPTION OF DRAWINGS

[0023] The present specification will be further illustrated in the manner of exemplary embodiments, which will be described in detail with reference to the accompanying drawings. These embodiments are not restrictive, and in these embodiments, the same reference numbers represent the same structures, wherein:

[0024] Figure 1 is a schematic diagram of a perspective structure of a wafer cleaning device according to some embodiments of the present specification;

[0025] Figure 2 is a schematic diagram of a side view of a wafer cleaning device according to some embodiments of the present specification;

[0026] Figure 3 is a schematic diagram of a top view of a wafer cleaning device according to some embodiments of the present specification;

[0027] Figure 4 is a schematic diagram of a distribution of heating coverage points of a square cleaning groove according to some embodiments of the present specification;

[0028] Figure 5 is a schematic diagram of a distribution of heating coverage points of a circular cleaning groove according to some embodiments of the present specification;

[0029] Figure 6 is a schematic diagram of a distribution of a ring-shaped heating pipe according to some embodiments of the present specification;

[0030] Figure 7 is a schematic diagram of a position of a tool and a wafer according to some embodiments of the present specification. DETAILED DESCRIPTION

[0031] In order to more clearly illustrate the technical solutions of the embodiments of the present specification, the drawings needed to be used in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some examples or embodiments of the present specification, and for those skilled in the art, the present specification can also be applied to other similar scenarios without creative labor. Unless it is clear from the language environment or otherwise stated, the same reference numbers in the drawings represent the same structure or operation.

[0032] It should be understood that the "system", "device", "unit" and / or "module" used herein is a method for distinguishing different components, elements, parts, sections or assemblies at different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.

[0033] As shown in the specification, unless the context clearly indicates otherwise, "one", "a", "an", and / or "the" do not refer to the singular, but can also include the plural. Generally, the terms "include" and "contain" only indicate the inclusion of the steps and elements explicitly identified, and these steps and elements do not constitute an exclusive list, and the method or device can also include other steps or elements.

[0034] Figure 1 is a schematic perspective view of a wafer cleaning device according to some embodiments of the present specification. Figure 2 is a schematic side view of a wafer cleaning device according to some embodiments of the present specification. Figure 3 is a schematic top view of a wafer cleaning device according to some embodiments of the present specification.

[0035] In some embodiments, as shown in Figures 1-3 the wafer cleaning device includes a cleaning tank 1, a cover 2, a wafer mounting area 3 and a heater 4; the cleaning tank 1 includes a bottom wall 11 and a side wall 12, the wafer mounting area 3 is arranged inside the bottom wall 11, the heater 4 is arranged inside the side wall 12, the cover 2 is arranged above the cleaning tank 1, and the cover 2 is provided with an exhaust hole 21.

[0036] The cleaning tank 1 is a tank body for cleaning wafers, for holding cleaning liquid and containing wafers to be cleaned. The cleaning liquid includes concentrated sulfuric acid solution, hydrogen peroxide solution, etc. The shape of the cleaning tank 1 can be set according to the needs. For example, the cleaning tank 1 can be a rectangular tank or a circular tank. For example, as shown in Figure 1 the cleaning tank 1 is a square tank body. The cleaning tank 1 can also be provided in other shapes, such as a regular polygon tank, etc.

[0037] In some embodiments, the outer side of the side wall 12 is provided with a folded edge, and the folded edge and the side wall 12 form a containing groove 13 configured to contain sealing liquid.

[0038] The folded edge refers to the part of the sidewall 12 of the cleaning tank 1 that is bent outward at the outer edge. The containing groove 13 refers to the groove formed between the folded edge and the outer wall of the cleaning tank 1.

[0039] The sealing liquid is a solution that forms a sealed state at the joint between the cleaning tank 1 and the cover 2. In some embodiments, the sealing liquid can be an inert liquid that is not active to the cleaning liquid (such as concentrated sulfuric acid), such as silicone oil and the like. For example, the sealing liquid can dissolve the vapor of the cleaning liquid. Exemplarily, the sealing liquid is water or the like.

[0040] In some embodiments of the present disclosure, by storing the sealing liquid in the containing groove, a barrier can be formed between the cleaning tank and the external environment, thereby improving the safety of the wafer cleaning process.

[0041] In some embodiments, as shown in Figure 2 The wafer cleaning device further comprises a first liquid discharge assembly 71, and the containing groove 13 is provided with a liquid discharge hole 72, and the first liquid discharge assembly 71 is in communication with the liquid discharge hole 72.

[0042] The first liquid discharge assembly 71 is an assembly for discharging waste liquid in the containing groove 13. The waste liquid refers to the liquid (including the sealing liquid and the cleaning liquid dissolved in the sealing liquid) in the containing groove after each wafer cleaning is completed. In some embodiments, the first liquid discharge assembly 71 is located outside the cleaning tank 1.

[0043] In some embodiments, the first liquid discharge assembly 71 comprises a pipeline, a valve and the like, and the first liquid discharge assembly 71 can control and guide the waste liquid to be discharged from the containing groove 13.

[0044] The liquid discharge hole 72 is a passage for the waste liquid to flow out of the containing groove 13.

[0045] In some embodiments of the present disclosure, the first liquid discharge assembly and the liquid discharge hole can ensure that the liquid in the containing groove can be safely and flexibly discharged.

[0046] In some embodiments, as shown in Figure 2 The wafer cleaning device further comprises a second liquid discharge assembly 73, and the bottom wall 11 of the cleaning tank 1 is provided with a waste liquid hole 74, and the second liquid discharge assembly 73 is in communication with the waste liquid hole 74.

[0047] The second liquid discharge assembly 73 is an assembly for discharging the waste liquid out of the wafer cleaning device. The specific structure of the second liquid discharge assembly 73 is similar to that of the first liquid discharge assembly 71. For details, please refer to the above Figure 2 related description.

[0048] In some embodiments, the second liquid discharge assembly 73 is arranged at the bottom of the cleaning tank 1.

[0049] The waste liquid hole 74 is a passage for the waste liquid to flow out from the inside of the cleaning tank 1.

[0050] In some embodiments of the present disclosure, by arranging the second liquid drainage assembly and the waste liquid hole, an effective waste liquid drainage mechanism can be provided to ensure that the waste liquid in the cleaning tank can be safely and flexibly drained.

[0051] The cover 2 is a top cover for covering the cleaning tank 1. The cover 2 can be made of an inert material resistant to acid corrosion, such as quartz material, etc.

[0052] The exhaust hole 21 is a hole on the cover 2 for discharging steam. The steam (such as acid mist steam) generated during the cleaning process is discharged out of the cleaning tank 1 through the exhaust hole 21, avoiding safety hazards caused by the increase of internal pressure of the cleaning tank 1, and also facilitating the adjustment of the air pressure in the cleaning tank 1.

[0053] In some embodiments, as shown in FIG. 1, the wafer cleaning device further comprises a negative pressure assembly 22 in communication with the exhaust hole 21. Figure 2

[0054] The negative pressure assembly 22 comprises a vacuum pump or other equipment capable of extracting air or gas, etc. In some embodiments, as shown in FIG. 1, the negative pressure assembly 22 can be connected and communicated with the exhaust hole 21 through a connecting piece 23. The connecting piece 23 can be a pipeline or other passage, etc. Figure 2

[0055] In some embodiments of the present disclosure, by extracting the volatile solvent (such as concentrated sulfuric acid) or other gas generated during the wafer cleaning process through the negative pressure assembly, an acid mist environment can be avoided in the internal space of the cleaning tank to prevent the acid mist from reacting with other impurities on the inner wall of the cleaning tank and polluting the cleaning liquid.

[0056] In some embodiments, the wafer cleaning device further comprises a pressure sensor arranged on the inner side of the side wall.

[0057] In some embodiments of the present disclosure, by arranging the pressure sensor on the side wall of the cleaning tank and directly contacting with the cleaning liquid, accurate pressure readings can be provided to ensure that the pressure during the cleaning process is maintained within the required pressure range, thereby ensuring that the acid mist in the cleaning tank is promptly discharged.

[0058] The wafer mounting area 3 refers to an area in the cleaning tank 1 for placing and fixing the wafer 5. In some embodiments, as shown in FIG. 1, the wafer mounting area 3 is located at the center position of the bottom wall 11 of the cleaning tank 1. Figure 1

[0059] ​​​The heater is a component for heating the cleaning liquid in the cleaning tank. The heater can heat the cleaning liquid to a target cleaning temperature, improving the cleaning effect. In some embodiments, the target cleaning temperature can be empirically pre-set.

[0060] In some embodiments, the wafer cleaning device further comprises a support leg 8 arranged at the bottom of the cleaning tank 1.

[0061] In some embodiments of the present specification, the wafer cleaning device achieves efficient cleaning while saving costs through reasonable structural design. For example, the cover can prevent the cleaning liquid from splashing out during the cleaning process, reduce the escape of volatile substances, maintain the cleanliness of the cleaning environment, etc. At the same time, the cover can also control the temperature and pressure conditions in the cleaning tank. The wafer mounting area can maintain the stability of the wafer during the cleaning process.

[0062] In some embodiments, the heater 4 is arranged with at least 3 heating coverage points along the periphery of the cleaning tank 1, and the difference between the distances between any two of the at least 3 heating coverage points is less than 20mm.

[0063] The heating coverage point refers to the point on the cleaning tank that needs to be covered by the heating area when the heater 4 is heating. After the heater is installed, the geometric center of the heater 4 can coincide with the position of the heating coverage point.

[0064] Figure 4 is a distribution diagram of the heating coverage points of a square cleaning tank according to some embodiments of the present specification. Figure 5 is a distribution diagram of the heating coverage points of a circular cleaning tank according to some embodiments of the present specification.

[0065] In some embodiments, when the cleaning tank 1 is a square tank, at least one heating coverage point is arranged on each side of the cleaning tank 1. For example, as shown in Figure 4 each side of the square cleaning tank 1-1 is provided with 1 heating coverage point 41-1, and the 4 heating coverage points 41-1 are uniformly distributed on the side wall of the square cleaning tank 1-1.

[0066] In some embodiments, when the cleaning tank is circular, the heater is arranged with at least 3 heating coverage points along the periphery of the cleaning tank 1. For example, as shown in Figure 5 the periphery of the circular cleaning tank 1-2 is provided with 3 heating coverage points 41-2, and the 3 heating coverage points 41-2 are uniformly distributed circumferentially on the side wall of the circular cleaning tank 1-2. In some embodiments, the heater 4 can also be arranged with 4 or 5 heating coverage points, etc. along the periphery of the circular cleaning tank 1-2.

[0067] In some embodiments, the difference between the distances between any two of the at least 3 heating coverage points is less than 5mm. In some embodiments, the difference between the distances between any two of the at least 3 heating coverage points is 0.

[0068] In some embodiments of the present disclosure, by setting multiple heating coverage points and controlling the distance between the heating coverage points, the heaters can be evenly distributed around the circumference of the cleaning tank 1, so that the heat generated by the heaters is evenly distributed in the circumferential direction of the cleaning tank 1, thereby improving the heating efficiency. At the same time, it is helpful to avoid problems such as poor cleaning effect or equipment damage caused by uneven heating.

[0069] In some embodiments, the distance between the highest heating coverage point and the lowest heating coverage point of the heater 4 in the depth direction of the cleaning tank 1 is not less than 100 mm.

[0070] In some embodiments, the size of the wafer to be cleaned includes a 6-inch wafer and / or an 8-inch wafer, etc. The diameter of a 6-inch wafer is about 150 mm, and the diameter of an 8-inch wafer is about 200 mm. In order to ensure uniform heating in the depth direction, a certain range of distribution in the depth direction is required.

[0071] The depth direction refers to the direction in which the side wall 12 of the cleaning tank 1 extends towards the bottom wall 11. The highest heating coverage point refers to the heating coverage point farthest from the bottom wall 11 of the cleaning tank 1. The lowest heating coverage point refers to the heating coverage point closest to the bottom wall 11 of the cleaning tank 1.

[0072] The multiple heating coverage points of the heater are set at different heights, and the distance between the highest heating coverage point and the lowest heating coverage point in the depth direction is not less than 100 mm, thereby ensuring uniform heat distribution of the heater in the depth direction and avoiding local overheating or insufficient heating of the wafer.

[0073] In some embodiments, the distance between the highest heating coverage point and the lowest heating coverage point ranges from 100 mm to 220 mm.

[0074] In some embodiments, by setting the distance range between the highest heating coverage point and the lowest heating coverage point, it is ensured that the liquid in the cleaning tank can be properly and uniformly heated, thereby improving the cleaning effect.

[0075] In some embodiments, as shown in Figure 1 and Figure 3 The wafer cleaning device further includes a temperature detection assembly 6, which is arranged on the inner side of the side wall 12, and the temperature detection assembly 6 is located below the highest heating coverage point of the heater 4.

[0076] The temperature detection assembly 6 is a component for monitoring the temperature of the cleaning liquid. In some embodiments, the temperature detection assembly 6 includes at least one of a temperature sensor, a thermocouple, etc.

[0077] The temperature sensing component 6 is located inside the side wall 12, ensuring direct contact with the cleaning fluid for accurate temperature measurement. Positioning the temperature sensing component 6 below the highest heating coverage point of the heater 4 ensures it is within the heater's heating zone, facilitating accurate temperature monitoring, ensuring the safety and efficiency of the cleaning process, and optimizing the heating effect.

[0078] In some embodiments, the heater 4 includes a plurality of heating rods, each heating rod including a heating section extending along the depth direction on the side wall 12 of the cleaning tank 1, the plurality of heating rods being distributed along the periphery of the cleaning tank 1, and the difference in distance between any two of the plurality of heating rods being less than 20 mm.

[0079] In some embodiments, each heating rod is an individual heat source, and multiple heating rods can work independently or collaboratively to heat the cleaning fluid in the cleaning tank. The shape of the heating rods can be configured as needed; they can be regular or irregular shapes, such as strips or other shapes.

[0080] The heating section of the heating rod has a certain length along the side wall 12 of the cleaning tank, ensuring that heat can be transferred to the cleaning fluid from different heights, which helps to achieve a uniform temperature distribution inside the cleaning tank. For example, the length of the heating section along the depth direction can range from 100mm to 220mm, and the specific length of the heating rod can be determined according to the size of the wafer to be heated. The length of the heating section is positively correlated with the size of the wafer.

[0081] In some embodiments, the difference in distance between any two heating rods is less than 5 mm. In some embodiments, the distance between any two heating rods is 0 mm. By controlling the difference in distance between any two heating rods to be as small as possible, it is possible to ensure a more uniform heat distribution and avoid problems such as uneven temperature caused by excessively dense or sparse heating rods in local areas.

[0082] In some embodiments of this specification, by reasonably arranging the number, position, and spacing between heating rods, the heating efficiency and uniformity during the cleaning process can be effectively improved, thereby improving the cleaning effect.

[0083] In some embodiments, such as Figures 1-3 As shown, the heating rod is a U-shaped heating tube 42, and multiple U-shaped heating tubes 42 are evenly distributed along the periphery of the cleaning tank 1.

[0084] The U-shaped heating tube 42 has two parallel heating arms and a bent portion connecting the heating arms, thereby increasing the contact area between the heating rod and the cleaning fluid and improving the heating efficiency of the heating rod.

[0085] The plurality of U-shaped heating pipes are evenly distributed along the circumferential side of the cleaning tank. The opening direction of the U-shaped heating pipes can be alternately arranged, so as to maximize the use of space and improve the uniformity of heat distribution.

[0086] Figure 6 is a distribution diagram of the annular heating pipe according to some embodiments of the present specification.

[0087] In some embodiments, as shown in Figure 6 the heater 4 comprises a plurality of annular heating pipes 43, which are arranged around the side wall 12 and distributed along the depth direction of the inner side of the side wall 12.

[0088] The annular heating pipe 43 is a closed ring structure, and the shape of the annular heating pipe 43 matches the shape of the cleaning tank 1. For example, the cleaning tank 1 is a rectangular tank, and the annular heating pipe 43 is rectangular. For another example, the cleaning tank 1 is a circular tank, and the annular heating pipe 43 is circular.

[0089] In some embodiments of the present specification, the plurality of annular heating pipes are distributed along the depth direction and arranged around the side wall, which helps to provide uniform heating effect in the depth range of the entire cleaning tank, ensuring that the liquid at different depths can be fully heated, thereby achieving efficient and uniform heating.

[0090] Figure 7 is a position diagram of the tool and the wafer according to some embodiments of the present specification.

[0091] In some embodiments, as shown in Figure 7 the wafer cleaning device further comprises a tool 31, which is arranged in the wafer mounting area 3.

[0092] The tool 31 is a structural member for mounting the wafer 5.

[0093] In some embodiments, as shown in Figure 7 the tool 31 is a protruding structure on the bottom wall 11 of the cleaning tank 1, which can support the wafer 5 and separate the wafer 5 from the bottom wall 11.

[0094] In some embodiments of the present specification, the tool can stably support the wafer while not hindering the contact between the cleaning liquid and the wafer surface.

[0095] In some embodiments, the projection of the heater 4 on the bottom wall plane of the cleaning tank 1 has a first projection center, the projection of the tool 31 on the bottom wall plane of the cleaning tank 1 has a second projection center, and the distance between the first projection center and the second projection center is less than 20 mm.

[0096] The first projection center refers to the geometric center point of the area or shape formed by the projection of the heater 4 on the bottom wall plane. The second projection center refers to the geometric center point of the area or shape formed by the projection of the tooling 31 on the bottom wall plane of the cleaning tank 1.

[0097] The distance between the first projection center and the second projection center refers to the straight-line distance between the first projection center and the second projection center.

[0098] In some embodiments of the present specification, by controlling the distance between the first projection center and the second projection center, the close cooperation between the heater and the tooling can be ensured to achieve efficient and uniform heating effect and optimize space utilization.

[0099] In some embodiments, as shown in FIG. 1, an auxiliary heat source 32 is arranged on the bottom wall 11 below the tooling 31. The coverage of the auxiliary heat source 32 on the bottom wall 11 is less than half of the projection range of the wafer 5 on the bottom wall 11. Figure 7

[0100] The auxiliary heat source 32 is a device for auxiliary heating of the cleaning liquid near the wafer mounting area 3. In some embodiments, the auxiliary heat source 32 is located in the middle of the inner side of the bottom wall 11.

[0101] The coverage of the auxiliary heat source 32 on the bottom wall 11 is the effective heating area of the auxiliary heat source 32.

[0102] In some embodiments of the present specification, when the tooling clamps the wafer for cleaning, the heating effect at the center position of the wafer may not be as good as at the edge. By arranging the auxiliary heat source, the heating effect of the cleaning liquid at the bottom of the center position of the wafer can be improved, and the whole wafer can be uniformly heated, which is conducive to obtaining accurate experimental conclusions.

[0103] In some embodiments, the heating temperature of the auxiliary heat source 32 is lower than the heating temperature of the heater 4.

[0104] In some embodiments, the auxiliary heat source 32 can be a heat source or a heat-retaining and heat-storing material. The heat provided by the auxiliary heat source 32 and the temperature reached are significantly lower than those of the heater 4. During the heating of the cleaning liquid, the center area of the wafer is far away from the heater 4 and the temperature rises slowly. By arranging the auxiliary heat source 32, the temperature rising rate of the center area of the wafer can be improved, so that there is no large temperature difference in the cleaning liquid of each area, and the overall cleaning effect of the wafer is ensured to be consistent.

[0105] It should be noted that the above description of the wafer cleaning device is only for example and illustration, and does not limit the scope of the present specification. Those skilled in the art can make various modifications and changes to the wafer cleaning device under the guidance of the present specification. However, these modifications and changes are still within the scope of the present specification.

[0106] ​Also, the use of "a" or "an" to describe embodiments of the present disclosure are intended to be a special delective of "one or more," unless otherwise noted. Similarly, expressions such as "at least one of A and B" should be construed to mean "A or B or both A and B" unless otherwise noted. As used herein, "another" means at least one, i.e., one or more, unless otherwise noted.

[0107] Similarly, it is to be noticed that the term "comprising", used in the description, should not be interpreted as being restricted to the means listed thereafter; it does not exclude other elements or steps. It is thus to be interpreted as specifying the presence of the stated features, integers, steps or components as referred to, but does not preclude the presence or addition of one or more other features, integers, steps or components, or groups thereof. Moreover, it is understood that the word "comprising" is one of the ordinary mea s for saying "consisting at least in part of" when used in the context as a translation of "comprising", "containing" or "including", particularly near the beginning of a sentence. Similarly, it is understood that the word "comprising" is one of the ordinary mea s for saying "consisting at least in part of" when used in the context as a translation of "comprising", "containing" or "including", particularly near the beginning of a sentence. It is also to be understood that the mea s "comprising" - as used throughout this specification and in claims - does not specify the presence of stated features, integers, steps or components thereof, the abse ce of which the claim or description stays plausible.

[0108] Some embodiments use numerical ranges to describe quantities of components, attributes, etc. It should be understood that such numerical ranges recited in the description of any embodiment herein are used to provide a general understanding of the disclosure. However, unless otherwise stated, the numerical ranges recited are approximations and are intended to capture variations within a reasonable range. Accordingly, numerical parameters are not fixed and are intended to be approximations. Although the numerical ranges and parameters setting forth the broadest scope of any embodiment of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as practicable. The numerical values set forth in the specific examples are provided to be as precise as reasonably possible. However, some variations can occur depending on the choice of device used in the experiments.

[0109] Finally, it should be understood that the embodiments described herein are intended to be illustrative only and in no way limit the scope of the present disclosure. Changes can be made in the design, arrangement, and construction of the methods and other elements described and illustrated, to the foregoing extent, without departing from the spirit of the present disclosure. The exemplary configurations set forth herein are presented for purposes of example and illustration only; those of ordinary skill in the art will readily devise numerous alternative configurations and equivalents to the exemplary configurations set forth herein without departing from the scope of the present disclosure. Accordingly, the present disclosure is not limited to that precisely as shown and described.

Claims

1. A wafer cleaning apparatus, characterized in that, include: Cleaning tank, cover, wafer mounting area and heater; The cleaning tank includes a bottom wall and side walls. The wafer mounting area is located inside the bottom wall, the heater is located inside the side wall, and the cover is placed over the cleaning tank. The cover has an exhaust hole.

2. The apparatus as described in claim 1, characterized in that, The heater has at least three heating coverage points along the periphery of the cleaning tank, and the difference in distance between any two of the at least three heating coverage points is less than 20 mm.

3. The apparatus as described in claim 2, characterized in that, The distance between the highest and lowest heating coverage points of the heater along the depth direction of the cleaning tank is not less than 100 mm.

4. The apparatus as described in claim 3, characterized in that, The distance between the highest heating coverage point and the lowest heating coverage point ranges from 100mm to 220mm.

5. The apparatus according to any one of claims 1-4, characterized in that, The heater includes a plurality of heating rods, each of which includes a heating section extending along the depth direction on the side wall of the cleaning tank. The plurality of heating rods are distributed along the periphery of the cleaning tank, and the difference in distance between any two of the plurality of heating rods is less than 20 mm.

6. The apparatus as described in claim 5, characterized in that, The heating rod is a U-shaped heating tube, and multiple U-shaped heating tubes are evenly distributed along the periphery of the cleaning tank.

7. The apparatus according to any one of claims 1-4, characterized in that, The heater includes a plurality of annular heating tubes that surround the sidewall and are distributed along the depth direction of the inner sidewall.

8. The apparatus as claimed in claim 1, characterized in that, The device further includes a temperature detection component disposed on the inner side of the side wall and located below the highest heating coverage of the heater.

9. The apparatus as claimed in claim 1, characterized in that, The apparatus also includes tooling disposed in the wafer mounting area.

10. The apparatus as claimed in claim 9, characterized in that, The heater has a first projection center on the bottom wall plane of the cleaning tank, and the tooling has a second projection center on the bottom wall plane of the cleaning tank. The distance between the first projection center and the second projection center is less than 20 mm.

11. The apparatus as claimed in claim 10, characterized in that, An auxiliary heat source is provided on the bottom wall below the tooling, and the coverage area of ​​the auxiliary heat source on the bottom wall is less than half of the projection area of ​​the wafer on the bottom wall.

12. The apparatus as claimed in claim 11, characterized in that, The heating temperature of the auxiliary heat source is lower than the heating temperature of the heater.

13. The apparatus as claimed in claim 1, characterized in that, The device also includes a negative pressure component, which is connected to the exhaust port.

14. The apparatus as claimed in claim 13, characterized in that, The device also includes a pressure sensor disposed on the inner side of the sidewall.

15. The apparatus as claimed in claim 1, characterized in that, The outer side of the sidewall is provided with a folded edge, which together with the sidewall forms a receiving groove, which is configured to receive sealing liquid.

16. The apparatus as claimed in claim 15, characterized in that, The device further includes a first drainage component, and a drainage hole is provided in the receiving tank. The first drainage component is in communication with the drainage hole.

17. The apparatus as claimed in claim 1, characterized in that, The device also includes a second drainage component, and the bottom wall of the cleaning tank is provided with a waste liquid hole, and the second drainage component is in communication with the waste liquid hole.

18. The apparatus as claimed in claim 16 or 17, characterized in that, The device also includes a support leg disposed at the bottom of the cleaning tank.

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