LCVD film halo detection system for TFT product

Abstract

The utility model discloses an LCVD (Liquid Chemical Vapor Deposition) film halo detection system aiming at a TFT (Thin Film Transistor) product. The LCVD film halo detection system comprises a TFT product simulation board and a measuring device, a circuit of the TFT product simulation board is consistent with a local to-be-tested circuit of an actual TFT product; a plurality of film-forming metal detection lines are arranged at equal intervals in a predetermined film-forming area along a film-forming diffusion direction; a film forming base line arranged at the first position is used for limiting the initial position of the film halo; the TFT product simulation board is provided with two film removing metal detection lines penetrating through a preset film forming area; pAD areas for resistance detection are arranged at the tail ends of the film-forming metal detection lines and the film-removing metal detection lines; the measuring device is used for measuring a resistance value between the film-forming base line and each film-forming metal detection line after the film halo is formed so as to determine a film halo range; and after the film halo is removed, a resistance value between the two film removing metal detection lines is measured so as to determine whether the film halo is completely removed or not. The film halo detection device can accurately detect the film halo range and determine the film removing effect.

Description

Technical Field

[0001] This invention belongs to the field of thin film transistors (TFTs), specifically relating to an LCVD halo detection system for TFT products. Background Technology

[0002] For TFT products, such as LCD panels, the film deposition line of LCVD (Laser-Excited Chemical Vapor Deposition) equipment will produce halo (a non-essential film generated outside the planned path under laser diffraction). The halo will form bright spots with ITO (Indium Tin Oxide), but because the halo is transparent and thin, it is invisible (it is also invisible when using FIB (Focused Ion Beam Microscopy)), making it impossible to determine its deposition range. Moreover, since the industry currently solves the bright spot problem by laser removal of the halo, given the above characteristics of the halo, the effect of laser removal cannot be confirmed at present. Utility Model Content

[0003] To address the aforementioned problems in the existing technology, this utility model provides an LCVD film halo detection system for TFT products. The technical problem to be solved by this utility model is achieved through the following technical solution:

[0004] An LCVD halo detection system for TFT products includes:

[0005] TFT product analog board and measuring device; among which,

[0006] The circuit of the TFT product simulation board is consistent with the partial test circuit of the actual TFT product.

[0007] The TFT product simulation board has multiple film-forming metal detection lines arranged at equal intervals along the film-forming diffusion direction within a predetermined film-forming area; the first film-forming metal detection line serves as the film-forming baseline, used to define the starting position of the halo formed by the film-forming equipment within the predetermined film-forming area; each film-forming metal detection line has a PAD area for resistance detection at its end.

[0008] The TFT product simulation board is provided with two film removal metal detection lines that run through the predetermined film formation area, and each film removal metal detection line is provided with a PAD area for resistance detection at its end.

[0009] The measuring device is used for measuring the resistance value between the film forming base line and each film forming metal detection line after the film forming equipment forms the film halo in the predetermined film forming area, so as to determine the film halo range; and is used for measuring the resistance value between the two film removing metal detection lines after the film removing equipment removes the film halo according to the film halo range, so as to determine whether the film halo is removed completely.

[0010] In an embodiment of the utility model, the TFT product simulation board further comprises:

[0011] The film forming mark is arranged at the film forming base line, wherein the film forming mark is in a notch shape, used for indicating that the film forming equipment forms a notch-shaped film halo; the opposite side of the opening of the notch shape is arranged on the film forming base line, and the length extension direction is consistent with the length extension direction of the film forming base line; and the arrangement direction of the plurality of film forming metal detection lines is opposite to the opening direction of the notch shape.

[0012] In an embodiment of the utility model, each film forming metal detection line comprises a film halo adjacent part and a film halo distant part; wherein the film halo distant part comprises two PAD areas and a terminal film forming metal detection line between the two PAD areas; and the film halo adjacent part of part of the film forming metal detection lines has multiple vertical turns.

[0013] In an embodiment of the utility model, in the film halo adjacent part of the plurality of film forming metal detection lines, the shortest line length of all the film forming metal detection lines perpendicular to the film forming diffusion direction is 300 mu m, the line spacing of the film forming metal detection lines perpendicular to the film forming diffusion direction is 15 mu m, the line width of the film forming base line is 10 mu m, and the line width of the remaining film forming metal detection lines is 5 mu m.

[0014] In an embodiment of the utility model, the line width of the terminal film forming metal detection line is 10 mu m.

[0015] In an embodiment of the utility model, the measurable film halo range formed by the plurality of film forming metal detection lines is 15 mu m to 160 mu m.

[0016] In an embodiment of the utility model, the measuring device comprises a probe, used for contacting the PAD area to collect signals.

[0017] In an embodiment of the utility model, when the measuring device determines the film halo range, it is specifically used for:

[0018] The signals of each deposited metal detection line collected by the probe are processed in a four-point measurement mode, the resistance value between the deposited base line and each remaining deposited metal detection line is determined, and when the resistance value changes to infinity, the previous remaining deposited metal detection line of the remaining deposited metal detection line corresponding to the resistance value is taken as an edge detection line, and the film halo range is determined by using the deposited base line and the edge detection line.

[0019] In an embodiment of the present application, the line width of the film-removed metal detection line is 10 μm.

[0020] In an embodiment of the present application, the measuring device is used to determine whether the film halo is completely removed.

[0021] The signals of the two film-removed metal detection lines collected by the probe are processed, the resistance value between the two film-removed metal detection lines is determined, if the resistance value is infinite, it is determined that the film halo is completely removed, otherwise, it is determined that the film halo is not completely removed.

[0022] The present application has the following advantages:

[0023] The LCVD film halo detection system for TFT products provided in the embodiment of the present application is used as a scale line in the predetermined film deposition area, along the film deposition diffusion direction, after film deposition, the resistance value between the deposited base line and the subsequent deposited metal detection line is detected by the measuring device, and the scale line where the film halo diffusion end position is located is determined, since the size and interval of each deposited metal detection line are known, the specific film halo range can be determined by combining the deposited base line as the film halo starting position, so that the size of the film halo can be accurately measured.

[0024] In the predetermined film deposition area, the two film-removed metal detection lines are provided, after film removal, the resistance value between the two film-removed metal detection lines is measured by the measuring device, so that whether the film halo is completely removed can be determined, and the film removal effect can be accurately detected.

[0025] The present application provides two Test Kit styles of film halo range detection and film halo removal effect detection, which can monitor the size of the film halo and the removal effect of the laser film halo, quickly feedback the equipment, optimize the film deposition and film halo removal parameters, truly reflect the path of film halo removal, reduce the variables, and timely intercept the film halo and film halo removal abnormalities. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 It is a local schematic view of a liquid crystal panel product before Inline LCVD film deposition.

[0027] Figure 2 This is a partial schematic diagram of a liquid crystal panel product after inline LCVD film deposition.

[0028] Figure 3 This is a schematic diagram of the structure of an LCVD halo detection system for TFT products provided in an embodiment of the present invention;

[0029] Figure 4 This invention provides a method for setting up a film-forming metal detection line according to an embodiment of the present invention.

[0030] Figure 5 This invention provides a method for setting up a metal detection line for film removal in an embodiment of the present invention. Detailed Implementation

[0031] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0032] Please see Figure 1 and Figure 2 As shown, Figure 1 This is a schematic diagram of the film deposition of a partial circuit unit in an Inline LCVD liquid crystal panel product (Inline LCVD indicates film deposition during the manufacturing process). Figure 2 This is a schematic diagram showing the halo effect and halo removal range after film deposition of a local circuit unit in an inline LCVD liquid crystal panel product. Figure 2 The thick black square in the middle represents the area where the halo was removed after film formation, while the thin black curved box represents the area of ​​the halo after film formation. Because the halo is transparent and thin, it is impossible to determine its approximate extent. Furthermore, the industry currently uses laser removal for halo removal, but due to the low visibility of the halo, the removal effect cannot be immediately confirmed afterward.

[0033] To address the aforementioned problems, this utility model provides an LCVD halo detection system for TFT products, based on a Test Kit (simulation board) design. Specifically, it offers two Test Kit styles: halo range detection and halo removal effect detection. Please refer to [link / reference]. Figure 3 The LCVD halo detection system for TFT products includes a TFT product simulation board and a measuring device; wherein,

[0034] The circuit of the TFT product simulation board is consistent with the partial test circuit of the actual TFT product.

[0035] The TFT product simulation board is provided with a plurality of film forming metal detection lines arranged at equal intervals along a film forming diffusion direction in a predetermined film forming area; wherein the first film forming metal detection line is used as a film forming baseline for defining the starting position of a film halo formed by the film forming device in the predetermined film forming area; and the end of each film forming metal detection line is provided with a PAD area for resistance detection;

[0036] The TFT product simulation board is provided with two film removing metal detection lines penetrating through the predetermined film forming area, and the end of each film removing metal detection line is provided with a PAD area for resistance detection;

[0037] The measuring device is used for measuring the resistance value between the film forming baseline and each subsequent film forming metal detection line after the film forming device forms a film halo in the predetermined film forming area, so as to determine the film halo range; and is used for measuring the resistance value between the two film removing metal detection lines after the film halo removing device removes the film halo according to the film halo range, so as to determine whether the film halo is completely removed.

[0038] Specifically, in order to realize the detection of the local circuit to be detected, a TFT product simulation board can be designed for the local circuit to be detected in advance, the structure of the TFT product simulation board is consistent with that of the actual TFT product, but only contains the local circuit to be detected, which is equivalent to cutting out a part corresponding to the local circuit to be detected from the actual TFT product.

[0039] The approximate film forming area, i.e. the predetermined film forming area, can be determined on the TFT product simulation board in advance, the predetermined film forming area is located around the local circuit to be detected, and the subsequent film forming device will generate a film halo in the predetermined film forming area, but the specific size range of the film halo cannot be determined, in order to effectively detect the film halo range, a plurality of film forming metal detection lines are arranged at equal intervals along the film forming diffusion direction in the predetermined film forming area, the film forming metal detection lines can be obtained by etching, and the metal can be copper or the like.

[0040] For film halo range detection, the local circuit to be detected on the TFT product simulation board is designed by selecting the line width and line-to-line spacing of the local circuit to be detected of the actual TFT product.

[0041] According to different film forming diffusion directions, the setting mode of the film forming metal detection line is also different, in order to facilitate understanding, the following takes the film forming diffusion direction to the right as an example to give a setting mode of the film forming metal detection line, please refer to Figure 4 The rest of the film forming diffusion direction can be understood with reference to the example.

[0042] Figure 4 In the embodiment, nine film forming metal detection lines are exemplarily given, which are arranged at equal intervals along the film forming diffusion direction, i.e. from left to right. Among them, the first film forming metal detection line arranged in the first place, i.e. the first film forming metal detection line on the left, serves as a film forming baseline, which is used to limit the starting position of the film halo formed by the film forming equipment in the predetermined film forming area. That is to say, the subsequent film forming equipment will form a film halo based on the film forming baseline and diffuse to the right, but the ending position of the diffusion needs to be detected by a measuring device.

[0043] In an optional embodiment, the TFT product simulation board further comprises:

[0044] A film forming mark is arranged at the film forming baseline, please refer to Figure 4 The point-shaped area in the upper left corner;

[0045] The film forming mark is in the shape of a notch, which is used to indicate that the film forming equipment forms a notch-shaped film halo. The opposite side of the opening of the notch-shaped mark is arranged on the film forming baseline, and the length extension direction of the opposite side is consistent with the length extension direction of the film forming baseline. The arrangement direction of the plurality of film forming metal detection lines is opposite to the opening direction of the notch-shaped mark.

[0046] Specifically, the film forming mark can be arranged in the predetermined film forming area on the TFT product simulation board by etching or other methods. The film forming mark is used to give a starting position prompt to the film forming equipment when the film forming equipment forms a film halo on the TFT product simulation board.

[0047] In order to make the film forming equipment produce a notch-shaped film halo and better indicate the diffusion direction of the film halo, the film forming mark in the embodiment of the utility model is in the shape of a notch. The opposite side of the opening of the notch-shaped mark, i.e. Figure 4 The right side of the notch-shaped mark is arranged on the film forming baseline, so that the film forming baseline does not exceed the width range of the right side. Moreover, the length extension direction of the right side is consistent with the length extension direction of the film forming baseline, so as to ensure that the lines are arranged in parallel. The arrangement direction of the plurality of film forming metal detection lines is opposite to the opening direction of the notch-shaped mark, i.e. the opening is to the left, while the arrangement direction of the plurality of film forming metal detection lines is to the right.

[0048] Specifically, each film forming metal detection line comprises a part adjacent to the film halo and a part away from the film halo. The part away from the film halo comprises two PAD areas and an end film forming metal detection line between the two PAD areas. The part adjacent to the film halo of some film forming metal detection lines has multiple vertical turns.

[0049] From Figure 4It can be seen that the end of each deposited metal detection line is provided with a PAD area for resistance detection (as shown by the middle rectangular block). Figure 4 In order to perform four-point measurement, two PAD areas are provided at the end of each deposited metal detection line, and the first PAD area of all deposited metal detection lines is located on the same straight line, and the second PAD area of all deposited metal detection lines is also located on the same straight line, and the two straight lines are parallel to each other in an up-down manner.

[0050] Taking the upper edge where the first PAD area is located as a boundary, the part above is the adjacent film halo part, and the part below is the part away from the film halo.

[0051] For the adjacent film halo part, see Figure 4 It can be seen that, in addition to the deposited base line, the rest of the deposited metal detection lines have two vertical turns to save space layout.

[0052] In the adjacent film halo part of the plurality of deposited metal detection lines, the shortest line length of all deposited metal detection lines perpendicular to the film diffusion direction is 300 μm, the line spacing of the deposited metal detection lines perpendicular to the film diffusion direction is 15 μm, the line width of the deposited base line is 10 μm, and the line width of the rest of the deposited metal detection lines is 5 μm.

[0053] Please refer to Figure 4 , the length of the longitudinal part of the rightmost deposited metal detection line in the plurality of deposited metal detection lines extending longitudinally in the upper left is the shortest line length mentioned above, which is 300 μm; this line length represents the line height of the equidistant deposited metal detection lines, and is set to 300 μm to prevent the film halo from expanding to the lower horizontal metal trace and affecting the measurement result.

[0054] Corresponding to Figure 4 the lower circle in the lower part, an enlarged schematic view is given on the right, which lists the deposited base line and the next two deposited metal detection lines. It can be seen that the line spacing of this part of the deposited metal detection lines is 15 μm, the line width of the deposited base line is 10 μm, and the line width of the rest of the deposited metal detection lines is 5 μm.

[0055] Since the deposited film width is generally 8-9 μm, setting the line width of the deposited base line to 10 μm can ensure that the deposited width, i.e. the starting width of the film, falls within the width of the deposited base line, thereby ensuring that the deposited base line can serve as the starting position of the film halo.

[0056] Since the actual TFT product Pixel line width is usually 5 μm, the line width of the rest of the deposited metal detection lines is set to 5 μm. It can be understood that the TFT substrate is composed of many pixels, and the pixel line width refers to the width of the circuit line that controls the pixel.

[0057] In the embodiment of the utility model, the line width of the rest film-forming metal detection lines is 5 μm, the line spacing is 15 μm, and the measurable film halo range formed by the plurality of film-forming metal detection lines is 15 μm to 160 μm. At present, the maximum distance of the analyzed film halo is 100 μm.

[0058] Referring to Figure 4 The film-forming metal detection line between the upper and lower PAD areas in the middle, i.e., the terminal film-forming metal detection line, has a line width of 10 μm, and the line width of the four-corner PAD is Figure 4

[0059] The process of determining the film halo range by the measuring device is described below. The measuring device determines the film halo size by measuring the resistance value between adjacent film-forming metal detection lines.

[0060] Specifically, after the film halo is formed in the predetermined film-forming area by the film-forming device, the resistance value between the film-forming base line and each subsequent film-forming metal detection line is measured to determine the film halo range.

[0061] The film-forming device can be any existing device that can form a film halo on a TFT product. For example, in the embodiment of the utility model, the film-forming device and the film removing device can be the same device, which is an LCVD laser chemical vapor deposition repair machine. The film-forming process is described in the relevant technical understanding, and the film removing process is described in the relevant technical understanding.

[0062] To achieve all the detections of the utility model, the measuring device includes a probe for contacting the PAD area to collect signals. It can be understood that after the probe collects the signals, the signals are transmitted to the inside of the measuring device through a transmission line for signal processing. The measuring device can include an 8-slot precision measuring host, a low leakage switch host, and a precision LCR meter. The specific measurement principle and process of the measuring device are described in the relevant technical understanding, and will not be described in detail here.

[0063] When the measuring device determines the film halo range, it is specifically used for:

[0064] The four-point measurement method is used to process the signals of each film-forming metal detection line collected by the probe, determine the resistance value between the film-forming base line and each subsequent rest film-forming metal detection line, and determine the previous rest film-forming metal detection line as the edge detection line when the resistance value changes to infinity. The film-forming base line and the edge detection line are used to determine the film halo range.

[0065] For ease of understanding, the film-forming metal detection line is divided into the film-forming base line and the rest film-forming metal detection line. Figure 4 ​The nine film-forming metal detection lines in the film-forming mark are numbered as 0, 1, 2, 3, 4, 5, 6, 7 and 8. The film-forming metal detection line 0 is a film-forming base line, and the film-forming metal detection lines 1-8 are remaining film-forming metal detection lines.

[0066] The resistance value between the film-forming base line and the film-forming metal detection line 1 can be determined by using a four-point measurement method. The four-point measurement method detects four PAD areas of the film-forming base line and the film-forming metal detection line 1, so that the influence of the probe contact resistance on the measurement result can be eliminated, and the stability is improved. The four-point measurement method is a common measurement method. For example, two probes in a first group are stuck in the upper and lower PAD areas of the film-forming base line, two probes in a second group are stuck in the upper and lower PAD areas of the line 1, a proper current is provided for the two probes in the first group, and then the voltage of the two probes in the second group is measured to calculate the resistance value. The specific process will not be described in more detail.

[0067] After the measurement device determines the resistance value between the film-forming base line and the film-forming metal detection line 1, it is determined whether the resistance value is less than a preset resistance value, which is generally tens of ohms to hundreds of ohms, and can be set according to the actual situation. If the resistance value is less than the preset resistance value, it indicates that the film halo edge covers the position corresponding to the film-forming metal detection line 1 in the predetermined film-forming area. Then, the resistance value between the film-forming base line and the film-forming metal detection line 2 is determined and judged, and the process is repeated in turn until the resistance values detected multiple times are all less than the preset resistance value, and the resistance value between the film-forming base line and a certain film-forming metal detection line, such as the film-forming metal detection line 7, is infinite. It indicates that the film halo edge does not reach the position corresponding to the film-forming metal detection line 7, but only reaches the position of the film-forming metal detection line 6. Therefore, the film-forming metal detection line 6 is used as an edge detection line, and the film-forming base line and the edge detection line arranged along the film-forming diffusion direction in the predetermined film-forming area are used as the starting position and the ending position respectively to determine the film halo range. See Figure 5 That is, the film halo range is determined by using the film-forming base line on the right side of the film-forming mark and the film-forming metal detection line 6.

[0068] It can be seen that, in the predetermined film-forming area, the multiple film-forming metal detection lines arranged at equal intervals along the film-forming diffusion direction are used as scale lines. After film forming, the measurement device detects the resistance value between the film-forming base line and the subsequent film-forming metal detection line to determine the scale line where the film halo diffusion end position is located. Since the size and interval of each film-forming metal detection line are known, the specific film halo range can be determined by combining the film-forming base line as the film halo starting position, so that the size of the film halo can be accurately measured.

[0069] After the film halo range is determined, the film halo range can be fed back to the film removing device to perform film removing operation according to the film halo range, so that the film removing operation can be more accurate.

[0070] For film removing effect detection, the TFT product simulation board can select four switch units of an actual TFT product as a local circuit to be detected.

[0071] As described above, the film halo is removed by laser, and the film halo removing effect cannot be known because the film halo is not visible; therefore, in the embodiment of the utility model, two film removing metal detection lines are arranged on the TFT product simulation board and penetrate the predetermined film forming area, and the end of each film removing metal detection line is provided with a PAD area for resistance detection; and the measuring device is used to measure the resistance value between the two film removing metal detection lines after the film halo removing operation of the film removing equipment according to the film halo range, so as to determine whether the film halo is removed completely, that is, to determine the film removing effect.

[0072] As Figure 5 In an example, the position of the film halo in the circle corresponds to the predetermined film forming area, but the specific range can be set according to the film halo range determined before; the first film removing metal detection line penetrates the predetermined film forming area up and down, and the upper left end thereof is provided with a PAD area for resistance detection; the second film removing metal detection line penetrates the predetermined film forming area up and down, and the lower right end thereof is provided with a PAD area for resistance detection; Figure 5 The remaining lines in the middle represent the local circuit to be detected.

[0073] Similarly, the film removing metal detection line can be obtained by etching, and the metal can be copper or the like.

[0074] In an optional embodiment, the line width of the film removing metal detection line can be 10 μm.

[0075] Similarly, the measuring device uses a probe to contact the PAD area of the film removing metal detection line to collect signals, and processes the signals of each film forming metal detection line collected by the probe.

[0076] When the measuring device determines whether the film halo is removed completely, it is specifically used for:

[0077] The signals of the two film removing metal detection lines collected by the probe are processed to determine the resistance value between the two film removing metal detection lines, if the resistance value is infinite, it is determined that the film halo is removed completely, otherwise, it is determined that the film halo is not removed completely.

[0078] Referring to ​ It can be understood that the adjacent Data lines (that is, the film removing metal detection lines) are respectively led out to the PAD area, the film halo will be overlapped with the adjacent Data line after film forming to cause short circuit, the film halo will be cut off after the laser removes the film halo, the resistance between the Data lines is measured to determine the film halo removing degree, if the resistance value is infinite, it is in the open circuit state, which indicates that the film halo is removed completely.

[0079] It can be seen that the utility model discloses an embodiment is provided with the two metal detection lines of removing film in the predetermined film forming area, after removing film, the resistance value between the two metal detection lines of removing film is measured by measuring device, thereby determining whether the film halo is removed completely, and the film removing effect can be accurately detected.

[0080] To sum up, the utility model discloses the design to Test Kit, specifically provides two Test Kit styles of film halo range detection and film halo removing effect detection, can monitor the film halo formation size and laser film halo removal effect daily, quickly feedback equipment, optimize film forming and film halo removal parameter, can truly react the path of film halo removal, reduce the variable, can intercept film halo and film halo removal anomaly in time.

[0081] It should be noted that in the description of the utility model, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the utility model and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements indicated must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the utility model.

[0082] In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more of the features. In the description of the utility model, the meaning of "multiple" is two or more, unless otherwise specifically limited.

[0083] In the description of the specification, the description of the terms "one embodiment", "some embodiments", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In the description of the specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in the specification.

[0084] The above merely describes preferred embodiments of the present application, and is not intended to limit the scope of protection of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the scope of protection of the present application.

Claims

1. An LCVD halo detection system for TFT products, characterized in that, include: TFT product analog board and measuring device; among which, The circuit of the TFT product simulation board is consistent with the partial test circuit of the actual TFT product. The TFT product simulation board has multiple film-forming metal detection lines arranged at equal intervals along the film-forming diffusion direction within a predetermined film-forming area; the first film-forming metal detection line serves as the film-forming baseline, used to define the starting position of the halo formed by the film-forming equipment within the predetermined film-forming area; each film-forming metal detection line has a PAD area for resistance detection at its end. The TFT product simulation board is provided with two film removal metal detection lines that run through the predetermined film formation area, and each film removal metal detection line is provided with a PAD area for resistance detection at its end. The measuring device is used to measure the resistance value between the film formation baseline and each subsequent film formation metal detection line after the film formation device forms a halo in the predetermined film formation area, thereby determining the halo range. And, after the membrane removal equipment performs a membrane halo removal operation based on the halo range, it measures the resistance value between the two membrane removal metal detection lines to determine whether the membrane halo has been completely removed.

2. The system according to claim 1, characterized in that, The TFT product simulation board also includes: A film-forming mark is provided at the film-forming baseline, wherein the film-forming mark is in the shape of a notch, used to indicate that the film-forming device forms a notch-shaped film halo; the opposite side of the opening in the notch shape is provided on the film-forming baseline, and the length extension direction is consistent with the length extension direction of the film-forming baseline; the arrangement direction of the plurality of film-forming metal detection lines is opposite to the opening direction of the notch shape.

3. The system according to claim 2, characterized in that, Each film-forming metal detection line includes a portion adjacent to the halo and a portion away from the halo; wherein, the portion away from the halo includes two PAD regions and the end film-forming metal detection line between the two PAD regions; the portion adjacent to the halo of some film-forming metal detection lines has multiple vertical bends.

4. The system according to claim 3, characterized in that, Among the adjacent halo portions of the multiple film-forming metal detection lines, the shortest line length among all film-forming metal detection lines perpendicular to the film-forming diffusion direction is 300 μm, the line spacing of the film-forming metal detection lines perpendicular to the film-forming diffusion direction is 15 μm, the line width of the film-forming baseline is 10 μm, and the line width of the remaining film-forming metal detection lines is 5 μm.

5. The system according to claim 3, characterized in that, The linewidth of the end-film metal detection line is 10 μm.

6. The system according to claim 4, characterized in that, The measurable halo range formed by the multiple film-forming metal detection lines is 15μm to 160μm.

7. The system according to claim 1, characterized in that, The measuring device includes a probe for contacting the PAD area to acquire signals.

8. The system according to claim 7, characterized in that, When determining the halo range, the measuring device is specifically used for: A four-point measurement method is used to process the signals of each film-forming metal detection line collected by the probe, determine the resistance value between the film-forming baseline and each subsequent remaining film-forming metal detection line, and take the previous remaining film-forming metal detection line corresponding to the remaining film-forming metal detection line when the resistance value changes to infinity as the edge detection line. The film halo range is determined by the film-forming baseline and the edge detection line.

9. The system according to claim 1, characterized in that, The linewidth of the metal detection line after film removal is 10 μm.

10. The system according to claim 1, characterized in that, When the measuring device determines whether the halo has been completely removed, it is specifically used for: The signals from the two metal removal detection lines collected by the probe are processed to determine the resistance value between the two metal removal detection lines. If the resistance value is infinite, it is determined that the halo has been completely removed; otherwise, it is determined that the halo has not been completely removed.

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