Semiconductor element manufacturing mechanism capable of preventing residual pollution gas from corroding substrate

Abstract

The utility model discloses a semiconductor element manufacturing mechanism capable of preventing residual pollution gas from corroding a substrate, which comprises an upper shell assembly, a lower shell assembly, an element placing assembly, a nitrogen supply assembly and a waste gas exhaust assembly, the nitrogen supply assembly comprises a nitrogen source connecting pipe, a constant-pressure adjusting device, a purifying machine, an electric switch device, a heating pipe assembly, an upper connecting branch pipe and an injection assembly which are connected in sequence, and the waste gas exhaust assembly comprises an upper connecting cavity, an exhaust amplification assembly and a lower exhaust pipeline. On semiconductor etching equipment, after substrate engineering is carried out, when gas left on the surface is exposed in the atmosphere, moisture is formed after the gas reacts with gas in the atmosphere. On one hand, the nitrogen supply assembly is adopted to spray nitrogen supplied at a certain temperature and pressure to the element placement assembly, and on the other hand, the waste gas exhaust assembly is adopted to exhaust pollution gas, so that the problem of residual corrosion of the pollution gas to the semiconductor element is solved.

Description

Technical Field

[0001] This utility model relates to semiconductor technology, and more particularly to a semiconductor device manufacturing mechanism that avoids residual polluting gases from corroding the substrate. Background Technology

[0002] Currently, typical semiconductor manufacturing processes include etching and vapor deposition, which are performed in a vacuum chamber filled with engineered gases under vacuum or higher conditions. While most of these engineered gases are expelled from the chamber during the process, some residue remains on the substrate surface, potentially affecting the substrate or contaminating the equipment used in the process, thus posing a problem.

[0003] Patent document with application number "CN201110045509.4" discloses a method for manufacturing a semiconductor device that can eliminate the influence of parasitic elements and prevent the increase of the on-state voltage. A trench (3) is formed on the front side of a semiconductor substrate, penetrating the base region and reaching the drift region (1). Then, a gate electrode (5) is buried inside the trench (3) with a gate insulating film (4) at a height not reaching the same height as the surface of the base region (2), forming a second recess. Next, an interlayer insulating film (7) is formed so as to be buried inside the second recess. Then, deep etching is performed so that the interlayer insulating film (7) remains only on the surface of the gate electrode (5). However, by etching, the surface layer of the base region (2) is removed until the surface of the base region (2) is located at a position lower than the interface between the gate electrode (5) and the interlayer insulating film (7), forming a first recess (6). Then, a source electrode (8) is buried inside the first recess (6).

[0004] Patent document with application number "CN202280022680.X" discloses a method for manufacturing a high-performance semiconductor substrate for memory devices with high production efficiency. A method for manufacturing a semiconductor substrate for memory devices includes: step (1), in which a semiconductor substrate having a titanium-containing film, a tungsten metal film, and a tungsten oxide film is contacted with a pretreatment agent to remove at least a portion of the aforementioned tungsten oxide film, wherein the titanium-containing film comprises at least one of titanium and a titanium alloy; step (2), in which the semiconductor substrate after step (1) is contacted with an etchant to remove at least a portion of the aforementioned titanium-containing film, wherein the aforementioned pretreatment agent comprises a tungsten oxide etchant selected from the group consisting of acids, ammonia, and ammonium salts.

[0005] The aforementioned patent documents, in conjunction with existing technologies, reveal the following deficiencies in existing semiconductor device manufacturing mechanisms designed to prevent residual contaminating gases from corroding the substrate:

[0006] Most current equipment utilizes the pressure difference of the semiconductor engineering's own exhaust pipe to expel contaminated gases. However, with the increasing integration of substrate manufacturing technology, contaminated gases on the surface of the micro-engineered substrate cannot be expelled and remain inside the EFEM and substrate storage area, which can corrode the EFEM and affect substrate production. Utility Model Content

[0007] In order to overcome the shortcomings of the prior art, this utility model provides a semiconductor device manufacturing mechanism that avoids residual pollutant gas from corroding the substrate, thus solving the problem of residual pollutant gas corroding the substrate.

[0008] The first aspect of this utility model is to provide a semiconductor device manufacturing mechanism that avoids corrosion of the substrate by residual polluting gases. The mechanism includes an upper housing assembly, a lower housing assembly, a device placement assembly, a nitrogen supply assembly, and a waste gas discharge assembly. The device placement assembly has an opening on one side and is located within the upper housing assembly. An insert plate for placing semiconductor devices is disposed within the device placement assembly. The nitrogen supply assembly includes a nitrogen source connecting pipe, a constant pressure regulating device, a purifier, an electric switch device, a heating tube assembly, an upper connecting branch pipe, and a spray assembly connected in sequence. The spray assembly is inserted into the device placement assembly and has several evenly distributed spray holes along a portion of the device placement assembly. The waste gas discharge assembly includes an upper connecting cavity, an exhaust amplification assembly, and a lower exhaust pipe. The upper connecting cavity communicates with the device placement assembly and is used to discharge waste gas. The exhaust amplification assembly is connected to both the upper connecting cavity and the lower exhaust pipe. A gas supply fan is disposed on the exhaust amplification assembly. In semiconductor etching equipment, after the substrate etching process, residual gases on the surface react with atmospheric gases (Gas) upon exposure to the atmosphere, forming moisture. This application employs a nitrogen supply component to inject nitrogen at a certain temperature and pressure into the component placement component, and a waste gas discharge component to remove polluting gases, thus solving the problem of residual corrosion of semiconductor components by polluting gases.

[0009] In a first aspect of this utility model, as a preferred embodiment, the insert plate is divided into an inner insert plate and two side insert plates, with the two side insert plates disposed on both sides of the inner insert plate.

[0010] In a preferred embodiment of the first aspect of this utility model, both the inner insert plate and the side insert plate are provided with a plurality of insertion slots.

[0011] In a first aspect of this invention, as a preferred embodiment, the semiconductor device manufacturing mechanism for preventing residual contaminating gases from corroding the substrate further includes a side control assembly.

[0012] In a first aspect of this utility model, as a preferred embodiment, the upper connecting cavity is fan-shaped, and the large end of the upper connecting cavity is connected to the component placement assembly.

[0013] In a preferred embodiment of the first aspect of this utility model, a gas humidity measuring device is provided on the upper connecting cavity.

[0014] In a preferred embodiment of the first aspect of this utility model, a gas humidity measuring device and a differential pressure measuring device are provided on the upper connecting cavity.

[0015] In a preferred embodiment of the first aspect of this utility model, the exhaust amplification component is provided with an air supply fan, and the exhaust amplification component is provided with an arc-shaped channel along its length that utilizes the Coanda effect for amplification.

[0016] In a first aspect of this utility model, as a preferred embodiment, a basic position sensor is provided on the top of the upper housing assembly.

[0017] In a first aspect of this utility model, as a preferred embodiment, an upper reflector and a lower reflector are respectively provided on the upper and lower sides of the component placement assembly.

[0018] In a first aspect of this utility model, as a preferred embodiment, the component placement assembly is provided with a placement cavity, and side observation windows are provided on both sides of the placement cavity.

[0019] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0020] The component placement assembly has an opening on one side and is located within the upper housing assembly. The component placement assembly contains a mounting plate for placing semiconductor components. The nitrogen supply assembly includes a nitrogen source connecting pipe, a constant pressure regulating device, a purifier, an electric switch device, a heating tube assembly, an upper connecting branch pipe, and a spray assembly connected in sequence. The spray assembly is inserted into the component placement assembly and has several evenly distributed spray holes along a portion of the component placement assembly. The exhaust gas discharge assembly includes an upper connecting cavity, an exhaust amplification assembly, and a lower exhaust pipe. The upper connecting cavity communicates with the component placement assembly and is used to discharge exhaust gas. The exhaust amplification assembly is connected to both the upper connecting cavity and the lower exhaust pipe, and a supply fan is installed on the exhaust amplification assembly. In semiconductor etching equipment, after substrate etching, residual gases on the surface react with atmospheric gases (Gas) upon exposure to the atmosphere, forming moisture. This application addresses this issue by using a nitrogen supply assembly to spray nitrogen at a specific temperature and pressure into the component placement assembly, and by using an exhaust gas discharge assembly to remove contaminated gases, thus solving the problem of residual corrosion of semiconductor components by contaminated gases. Attached Figure Description

[0021] Figure 1 This is a perspective view of the present utility model;

[0022] Figure 2 This is another perspective view of the present invention;

[0023] Figure 3 This is another perspective view of the present utility model;

[0024] Figure 4 This is another perspective view of the present utility model;

[0025] Figure 5 This is an internal 3D view;

[0026] Figure 6 A 3D view of the nitrogen supply components;

[0027] Figure 7 A partial 3D view of the nitrogen supply assembly;

[0028] Figure 8 A 3D view of the exhaust gas discharge assembly;

[0029] Figure 9 This is a partial structural diagram of the exhaust amplification component.

[0030] In the diagram: 10. Upper housing assembly; 101. Basic position sensor; 20. Lower housing assembly; 21. Roller; 22. Adjustable feet; 30. Component placement assembly; 31. Placement cavity; 311. Side observation window; 32. Inner insert plate; 33. Side insert plate; 34. Lower reflector; 35. Upper reflector;

[0031] 100. Nitrogen supply assembly; 41. Nitrogen source connection pipe; 42. Constant pressure regulating device; 43. Purifier; 44. Electric switch device; 45. Heating tube assembly; 46. Upper connecting branch pipe; 50. Injection assembly; 501. Injection hole; 200. Exhaust gas discharge assembly; 60. Upper connecting cavity; 61. Gas humidity measuring device; 62. Differential pressure measuring device; 70. Exhaust amplification assembly; 701. Air supply fan; 71. Arc-shaped channel; 80. Lower exhaust pipe; 90. Side control assembly. Detailed Implementation

[0032] The utility model will now be further described in conjunction with the accompanying drawings and specific embodiments. It should be noted that, without conflict, the various embodiments or technical features described below can be arbitrarily combined to form new embodiments. Unless otherwise specified, the materials and equipment used in this embodiment are all commercially available. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0033] In the description of this application, it should be understood that the terms "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In the description of this application, "a plurality of" means two or more, unless otherwise precisely specified.

[0034] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected," "linked," and "connected" should be interpreted broadly. For example, they can refer to a fixed connection, a connection through an intermediary, or a connection within two elements or an interaction between two elements. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0035] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such process, method, product, or apparatus.

[0036] like Figure 1-9As shown, a semiconductor device manufacturing mechanism that avoids residual pollutants corroding the substrate includes an upper housing assembly 10, a lower housing assembly 20, a device placement assembly 30, a nitrogen supply assembly 100, and an exhaust gas discharge assembly 200. The device placement assembly 30 has an opening on one side and is located inside the upper housing assembly 10. An insert plate for placing semiconductor devices is disposed inside the device placement assembly 30. The nitrogen supply assembly 100 includes a nitrogen source connecting pipe 41, a constant pressure regulating device 42, a purifier 43, an electric switch device 44, a heating tube assembly 45, and an upper connecting pipe 40, all connected in sequence. The component placement assembly 30 is inserted into the component placement assembly 30 and has several evenly distributed spray holes 501 along its portion. The exhaust gas discharge assembly 200 includes an upper connecting cavity 60, an exhaust amplification assembly 70, and a lower exhaust pipe 80. The upper connecting cavity 60 communicates with the component placement assembly 30 and is used to discharge exhaust gas. The exhaust amplification assembly 70 is connected to both the upper connecting cavity 60 and the lower exhaust pipe 80, and is equipped with an air supply fan 701. In semiconductor etching equipment, after substrate etching, residual gases on the surface react with atmospheric gases (Gas) upon exposure to the atmosphere, forming moisture. This application addresses this issue by using a nitrogen supply assembly 100 to spray nitrogen at a specific temperature and pressure into the component placement assembly 30, and by using an exhaust gas discharge assembly 200 to remove contaminated gases, thus solving the problem of residual corrosion of semiconductor components by contaminated gases.

[0037] Specifically, the injected heated nitrogen (N2) gas can inhibit the formation of surface moisture, thereby removing the generated moisture. During nitrogen (N2) gas injection, it is supplied at a certain temperature and pressure. By measuring the pressure and temperature at the end nozzle during gas injection, uniform injection can be achieved through pressure regulation and gas injection.

[0038] In a preferred embodiment of the first aspect of this invention, the insert plate is divided into an inner insert plate 32 and two side insert plates 33, with the two side insert plates 33 disposed on both sides of the inner insert plate 32. Specifically, the upper housing assembly 10 prevents the substrate storage area from being subjected to external impacts and interference, and also includes a window that allows the substrate to be observed from the outside. The lower housing assembly 20 has a blocking function to prevent air from flowing out of the EFEM and to prevent the internal devices from being subjected to external impacts and interference.

[0039] In a preferred embodiment of the first aspect of this utility model, both the inner insert plate 32 and the side insert plate 33 are provided with a plurality of insertion slots.

[0040] In a first aspect of this invention, as a preferred embodiment, the semiconductor device manufacturing mechanism for preventing residual contaminating gases from corroding the substrate further includes a side control assembly 90.

[0041] In a preferred embodiment of the first aspect of this invention, the upper connecting cavity 60 is fan-shaped, and its large end communicates with the component placement assembly 30. The upper connecting cavity 60 is a funnel for collecting residual contaminated gas.

[0042] In a preferred embodiment of the first aspect of this invention, a gas humidity measuring device 61 and a differential pressure measuring device 62 are provided on the upper connecting cavity 60. A space for collecting gas is provided at the beginning of the exhaust, allowing for the collection of a large amount of discharged pollutant gas. A humidity sensor is installed, and by measuring the humidity of the discharged gas, the humidity inside the substrate storage section can be indirectly determined.

[0043] In a preferred embodiment of the first aspect of this invention, the exhaust amplification component 70 is provided with an air supply fan 701, and the exhaust amplification component 70 has an arc-shaped channel 71 along its length that utilizes the Coanda effect for amplification. Specifically, the Coanda effect refers to the phenomenon that fluid tends to flow along curved surfaces rather than in a straight line. Fluid adhesion: When fluid approaches a curved surface, the fluid pressure decreases due to the surface curvature, causing the fluid to adhere to the surface and flow. Wide application: The Coanda effect has important applications in many fields, such as aerospace, automotive, and fluid machinery design. Installing an amplifier utilizing the Coanda effect at the exhaust port lowers the surface pressure and increases exhaust volume. When the exhaust volume increases, in order to maintain a constant internal pressure difference, the air volume of the amplifier is controlled. Instead of compressed air, a motor fan is used because the air supply can be actively adjusted. The exhaust amplifier is installed inside the exhaust pipe and is made using the Coanda effect. Based on the principle that fluid flows faster along a surface, the exhaust speed increases, thus increasing the exhaust volume. Specifically, the air supply fan 701 is a device that supplies air to the exhaust amplifier, and adjusts the amount of air supplied according to the set value of the differential pressure of the main control device.

[0044] In a preferred embodiment of the first aspect of this invention, a basic position sensor 101 is provided on the top of the upper housing assembly 10. This sensor, capable of detecting distance, is used to identify the number of the substrate entering or leaving the substrate storage section. The basic position sensor 101, which detects distance, is installed on the entrance side of the storage section, allowing the identification of the corresponding loading section number based on the measured height of each substrate.

[0045] In a preferred embodiment of the first aspect of this utility model, an upper reflector 35 and a lower reflector 34 are respectively provided on the upper and lower sides of the component placement assembly 30. The reflectors are devices for confirming the substrate position; they are used to determine whether the substrate is placed in the correct position when it is loaded inside the storage section. When the substrate is removed from its position, a red light illuminates on the main control device of the side control assembly 90 to prevent damage to the substrate.

[0046] In a first aspect of this utility model, as a preferred embodiment, the component placement assembly 30 is provided with a placement cavity 31, and side observation windows 311 are provided on both sides of the placement cavity 31.

[0047] Specifically, the lower housing assembly 20 is equipped with rollers 21 and adjustable feet 22. By adjusting the temperature and pressure of nitrogen (N2) gas, the humidity inside the storage compartment can be regulated, and pollutants can be effectively discharged. The airflow of the amplifier is adjusted, and the resulting internal and external pressure difference is identified. The associated temperature, pressure, humidity, etc., are recorded in the internal storage device for engineering analysis and real-time transmission.

[0048] The above embodiments are merely preferred embodiments of this utility model and should not be construed as limiting the scope of protection of this utility model. Any non-substantial changes and substitutions made by those skilled in the art based on this utility model shall fall within the scope of protection claimed by this utility model.

Claims

1. A semiconductor device manufacturing mechanism that avoids residual contaminating gases corroding the substrate, characterized in that, It includes an upper housing assembly, a lower housing assembly, a component placement assembly, a nitrogen supply assembly, and an exhaust gas discharge assembly. The component placement assembly has an opening on one side and is located inside the upper housing assembly. The component placement assembly is provided with a through-hole plate for placing semiconductor components. The nitrogen supply assembly includes a nitrogen source connecting pipe, a constant pressure regulating device, a purifier, an electric switch device, a heating pipe assembly, an upper connecting branch pipe, and an injection assembly connected in sequence. The injection assembly is inserted into the element placement assembly, and the injection assembly has several evenly distributed injection holes along the part of the element placement assembly. The exhaust gas discharge assembly includes an upper connecting cavity, an exhaust amplification assembly, and a lower exhaust pipe. The upper connecting cavity is connected to the component placement assembly and is used to discharge exhaust gas. The exhaust amplification assembly is connected to the upper connecting cavity and the lower exhaust pipe, respectively. An air supply fan is provided on the exhaust amplification assembly.

2. The semiconductor device manufacturing mechanism as described in claim 1, which avoids residual contaminating gases corroding the substrate, is characterized in that: The insert plate is divided into an inner insert plate and two side insert plates, with the two side insert plates disposed on both sides of the inner insert plate.

3. The semiconductor device manufacturing mechanism as described in claim 2, which avoids residual contaminating gases corroding the substrate, is characterized in that: Both the inner insert plate and the side insert plate are provided with several insertion slots.

4. The semiconductor device manufacturing mechanism as described in claim 1, which avoids residual contaminating gases corroding the substrate, is characterized in that: The semiconductor device manufacturing mechanism for preventing residual contaminant gases from corroding the substrate also includes a side control assembly.

5. The semiconductor device manufacturing mechanism as described in claim 1, which avoids residual contaminating gases corroding the substrate, is characterized in that: The upper connecting cavity is fan-shaped, and the large end of the upper connecting cavity is connected to the component placement assembly.

6. The semiconductor device manufacturing mechanism as described in claim 5, which avoids residual contaminating gases corroding the substrate, is characterized in that: The upper connecting cavity is equipped with a gas humidity measuring device and a differential pressure measuring device.

7. The semiconductor device manufacturing mechanism as described in claim 6, which avoids residual contaminating gases corroding the substrate, is characterized in that: The exhaust amplification component is equipped with an air supply fan, and the exhaust amplification component has an arc-shaped channel along its length that utilizes the Coanda effect for amplification.

8. The semiconductor device manufacturing mechanism as described in claim 1, which avoids residual contaminating gases corroding the substrate, is characterized in that: A basic position sensor is provided on the top of the upper housing assembly.

9. The semiconductor device manufacturing mechanism as described in claim 8, which avoids residual contaminating gases corroding the substrate, is characterized in that: The component placement assembly is provided with an upper reflector and a lower reflector on its upper and lower sides, respectively.

10. The semiconductor device manufacturing apparatus as described in claim 1 for preventing residual contaminating gases from corroding the substrate, characterized in that: The component placement assembly is provided with a placement cavity, and side observation windows are provided on both sides of the placement cavity.

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