Chemical vapor deposition device
By employing a combination design of heating plate, lifting component and clamping assembly in the chemical vapor deposition apparatus, the problem of wafer warpage was solved, and better film thickness control and deposition effect were achieved.
Patent Information
- Application Number
- CN202520294666.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-24
- Publication Date
- 2026-01-27
- Estimated Expiration
- 2035-02-24
AI Technical Summary
Wafers are prone to warping during chemical vapor deposition, which makes it impossible to control the film thickness and results in poor deposition performance.
A chemical vapor deposition apparatus was designed, including a heating plate, a lifting component, and multiple clamping components. The clamping components clamp the wafer by their own gravity, and the clamping and releasing states are switched by the lifting and lowering of the lifting component to ensure the stability of the wafer during the deposition process.
It effectively reduces the possibility of wafer warping during deposition, improves the control of film thickness and deposition effect, and is simple to operate and low in cost.
Smart Images
Figure CN223837560U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor manufacturing equipment technology, specifically to a chemical vapor deposition apparatus. Background Technology
[0002] Chemical vapor deposition is one of the important steps in wafer fabrication. Its basic principle is to carry out the process in a vacuum chamber using a precursor gas. The wafer is placed on a heated plate in the vacuum chamber. During deposition, the precursor gas in the vacuum chamber can form plasma, generate reaction products, and deposit them on the wafer surface in a thin layer to improve the uniformity of the wafer surface.
[0003] During chemical vapor deposition, wafers are prone to warping, which makes it impossible to control the thickness of the film deposited on the wafer surface, resulting in poor deposition effect. Utility Model Content
[0004] Therefore, it is necessary to provide a chemical vapor deposition apparatus that can reduce wafer warpage and improve deposition efficiency to address the above problems.
[0005] This application provides a chemical vapor deposition apparatus, which includes a heating plate, a lifting component, and multiple clamping components. The heating plate and the lifting component are arranged vertically along the direction of gravity. All the clamping components are installed on the heating plate and arranged around the circumference of the heating plate. Each clamping component includes a clamping component.
[0006] The chemical vapor deposition apparatus has a pressing state in which the lifting member descends and separates from each of the pressing members, and each of the pressing members presses the wafer against the top surface of the heating plate under its own gravity; the chemical vapor deposition apparatus also has a releasing state in which the lifting member rises and pushes against each of the pressing members, so as to separate each of the pressing members from the wafer.
[0007] In some embodiments, the clamping assembly further includes a base, on which a first mounting slot is provided that extends radially through the heating plate and extends to the bottom surface of the base along the direction of gravity.
[0008] The clamping component includes a clamping part, a connecting part, and a counterweight part connected in sequence. The clamping part protrudes from the top surface of the base, the counterweight part protrudes from the bottom surface of the base, and the connecting part is at least partially inserted into the first mounting slot and rotatably connected to the wall of the first mounting slot.
[0009] In some embodiments, the base further includes a limiting hole, the limiting hole being arranged and communicating with the first mounting groove along the direction of gravity, the connecting portion passing through the limiting hole, and the hole wall of the limiting hole abutting against the clamping member.
[0010] In some embodiments, the connecting portion includes a first segment and a second segment, and the pressing portion, the first segment, the second segment and the counterweight portion are connected in sequence, with the first segment and the second segment being set at an obtuse angle.
[0011] In some embodiments, the counterweight is a shaft-shaped structure, and a first mounting hole is provided on the connecting portion, through which the counterweight passes and is held in the first mounting hole.
[0012] In some embodiments, the heating plate is provided with a plurality of second mounting slots arranged circumferentially thereon. The second mounting slots penetrate the heating plate along the direction of gravity and correspond one-to-one with the base. The two sidewalls of the two slots arranged opposite to each other of the second mounting slots are in concave-convex fit with the corresponding bases.
[0013] In some embodiments, the second mounting slot has a connecting slot wall connected between two opposing slot sidewalls, the surface of the base facing away from the connecting slot wall does not exceed the peripheral side surface of the heating plate, and the top surface of the base does not exceed the top surface of the heating plate.
[0014] In some embodiments, the lifting member is an annular structure and extends circumferentially along the heating plate, and the projection of each of the weights in the direction of gravity falls at least partially into the lifting member.
[0015] In some embodiments, the base has a second mounting hole that extends through the heating plate in a direction perpendicular to and horizontal to the radial direction. The second mounting hole communicates with the first mounting slot. The connecting portion has a third mounting hole.
[0016] The clamping assembly also includes a rotating shaft, which passes through the second mounting hole and the third mounting hole, and is rotatably connected to the base and the connecting part.
[0017] In some embodiments, the chemical vapor deposition apparatus further includes a support column supported on the bottom side of the heating plate; and / or, the chemical vapor deposition apparatus further includes a lifting drive, which is tractively connected to the lifting member and used to drive the lifting member to rise or fall.
[0018] Compared with the prior art, this application has the following beneficial effects:
[0019] In the aforementioned chemical vapor deposition (CVD) apparatus, when the apparatus is in the clamping state, the lifting mechanism descends and separates from the clamping components. Each clamping component, under its own gravity, presses the wafer firmly against the top surface of the heating plate, reducing the likelihood of the wafer shifting or warping relative to the heating plate due to external influences during deposition, thus improving the deposition effect. When the CVD apparatus is in the releasing state, the lifting mechanism rises and pushes against the clamping components, separating them from the wafer for easier wafer handling. Attached Figure Description
[0020] Figure 1 This is a schematic diagram of the chemical vapor deposition apparatus in a compressed state and its interaction with a wafer in one embodiment of this application;
[0021] Figure 2 for Figure 1 An enlarged schematic diagram of a local structure A in the chemical vapor deposition apparatus shown;
[0022] Figure 3 for Figure 1 A cross-sectional view of the chemical vapor deposition apparatus shown, taken along the BB direction;
[0023] Figure 4 for Figure 3 A magnified schematic diagram of a local structure C in the chemical vapor deposition apparatus shown;
[0024] Figure 5 for Figure 1 An exploded view of the chemical vapor deposition apparatus shown.
[0025] Figure 6 for Figure 5 An enlarged schematic diagram of a local structure D in the chemical vapor deposition apparatus shown;
[0026] Figure 7 A cross-sectional view along the BB direction of a chemical vapor deposition apparatus in a released state after being fitted with a wafer in one embodiment of the application.
[0027] Figure 8 for Figure 7 A magnified schematic diagram of a local structure E in the chemical vapor deposition apparatus shown;
[0028] Figure 9 This is a schematic diagram of the clamping assembly in one embodiment of this application;
[0029] Figure 10 for Figure 9 The exploded view of the clamping assembly is shown.
[0030] Icon labels:
[0031] 100. Chemical vapor deposition apparatus; 200. Wafer;
[0032] 10. Pressing assembly; 20. Heating plate; 30. Lifting component; 40. Connecting component; 50. Support column;
[0033] 11. Clamping component; 111. Clamping part; 112. Counterweight part; 113. Connecting part; 1131. First mounting hole; 1132. Third mounting hole; 1133. First section; 1134. Second section; 12. Base; 121. First mounting groove; 122. Limiting hole; 123. Second mounting hole; 124. Recess; 13. Rotating shaft; 21. Second mounting groove; 211. Groove sidewall; 212. Connecting groove wall; 22. Protrusion. Detailed Implementation
[0034] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.
[0035] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0036] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0037] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0038] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0039] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.
[0040] Chemical vapor deposition is one of the important steps in wafer fabrication. Its basic principle is to use a heating plate to heat one or more gases (called precursor gases) to decompose them, produce reaction products, and deposit them on the wafer surface to improve the uniformity of the wafer surface.
[0041] In the chemical vapor deposition process, the wafer is usually placed directly on and supported on a heating plate. Due to the lack of a structure to fix the wafer and the heating plate, the wafer is easily affected by external factors during the deposition process and warps. As a result, the thickness of the film deposited on the wafer surface cannot be controlled, and the deposition effect is poor.
[0042] Please see Figures 1 to 10To address the aforementioned problems, this application provides a chemical vapor deposition apparatus 100, which includes multiple clamping components 10, a heating plate 20, and a lifting component 30. The heating plate 20 and the lifting component 30 are arranged vertically along the direction of gravity. All clamping components 10 are mounted on the heating plate 20 and arranged circumferentially around the heating plate 20. Each clamping component 10 includes a clamping element 11. The chemical vapor deposition apparatus has a clamping state in which the lifting component 30 descends and separates from each clamping component 11, and each clamping component 11 presses the wafer 200 against the top surface of the heating plate 20 under its own gravity. The chemical vapor deposition apparatus also has a releasing state in which the lifting component 30 rises and pushes against each clamping component 11, so that each clamping component 11 separates from the wafer 200.
[0043] The heating plate 20 serves to support and mount the wafer 200, and it can also heat the precursor gas, causing it to decompose. To improve the stability of the heating plate 20 in supporting the wafer 200, a limiting groove is provided on the top surface of the heating plate 20, within which the wafer 200 is placed and confined.
[0044] In addition, the chemical vapor deposition apparatus 100 also includes a support column 50, which is supported on the bottom side of the heating plate 20, thereby raising the heating plate 20 to facilitate the installation of the clamping assembly 10 on the heating plate 20.
[0045] Multiple clamping components 10 are arranged evenly along the circumference of the heating plate 20 to improve the stability and reliability of wafer 200 clamping.
[0046] The lifting member 30 is positioned below the heating plate 20 along the direction of gravity, and can rise or fall relative to the heating plate 20, thereby achieving state switching of the chemical vapor deposition apparatus 100. Specifically, the chemical vapor deposition apparatus 100 also includes a lifting drive member, which is connected to the lifting member 30 and is used to drive the lifting member 30 to rise or fall. As an example, the lifting drive member can be directly connected to the lifting member 30, or it can be connected to the lifting member 30 via a connecting member 40.
[0047] When the chemical vapor deposition apparatus 100 is in the clamping state, the lifting component 30 descends and separates from each clamping component 11. Each clamping component 11, under its own gravity, presses the wafer 200 against the top surface of the heating plate 20, reducing the possibility of the wafer 200 moving or warping relative to the heating plate 20 due to external influences during deposition, thus improving the deposition effect. When the chemical vapor deposition apparatus 100 is in the released state, the lifting component 30 rises and pushes against each clamping component 11, separating the clamping component 11 from the wafer 200 for easier handling. Furthermore, the arrangement of all clamping components 10 along the circumference of the heating plate 20 to clamp the wafer 200 provides a good clamping effect, further reducing the risk of the wafer 200 moving relative to the heating plate 20 and optimizing the deposition effect. As for the method by which the clamping member 11 clamps the wafer 200 under its own weight, this method generally applies a constant pressure to the wafer 200. It avoids damaging the wafer 200 due to excessive pressure, or failing to clamp it due to insufficient pressure, resulting in excellent clamping performance. Furthermore, utilizing the clamping member 11's own weight to clamp the wafer 200, and then releasing it via the lifting member 30, results in a simple, reliable, and convenient structure.
[0048] Please refer to it again. Figure 4 , Figures 8 to 10 In some embodiments, the clamping assembly 10 further includes a base 12, on which a first mounting groove 121 is provided radially through the heating plate 20, and the first mounting groove 121 extends to the bottom surface of the base 12 along the direction of gravity. The clamping member 11 includes a clamping part 111, a connecting part 113, and a counterweight part 112 connected in sequence. The clamping part 111 protrudes from the top surface of the base 12, the counterweight part 112 protrudes from the bottom surface of the base 12, and the connecting part 113 is at least partially inserted into the first mounting groove 121 and rotatably connected to the groove wall of the first mounting groove 121.
[0049] The clamping part 111 is mainly used to clamp or release the wafer 200. The connecting part 113 is used to connect the clamping part 111 and the counterweight part 112. The counterweight part 112 is the part where the mass of the clamping part 11 is mainly concentrated. The counterweight part 112 can be a spherical structure, a shaft structure or other structures, which can be set according to the requirements.
[0050] When the chemical vapor deposition apparatus 100 is in the clamping state, the lifting member 30 separates from the counterweight 112 of the clamping member 11. Under the action of gravity, the counterweight 112 drives the connecting part 113 and the clamping part 111 to swing within the first mounting slot 121, so that the clamping part 111 presses the wafer 200 onto the heating plate 20. When the chemical vapor deposition apparatus 100 is in the released state, the lifting member 30 rises and pushes against the counterweight 112, driving the counterweight 112 to drive the connecting part 113 and the clamping part 111 to swing within the first mounting slot 121, causing the clamping part 111 to tilt upwards and separate from the wafer 200. At this time, the clamping effect of the clamping member 11 is ineffective, facilitating the loading and unloading of the wafer 200.
[0051] In this embodiment, the design of the clamping part 111, the connecting part 113 and the counterweight part 112, the connection between the clamping part 11 and the base 12 and the clamping and releasing of the wafer 200 by swinging are simple and easy to operate, and the structure is simple, which helps to reduce the manufacturing cost of the chemical vapor deposition apparatus 100.
[0052] Of course, the form of the clamping member 11 is not limited to the one described above; it can also be in other forms. For example, there is no connection between the connecting part 113 and the base 12. The base 12 has an installation channel that runs through the base 12 along the direction of gravity. The connecting part 113 passes through the installation channel and slides up and down under the guidance of the installation channel. When the lifting member 30 separates from the counterweight 112, the counterweight 112 drives the connecting part 113 and the clamping part 111 to slide down until the clamping part 111 clamps the wafer 200. When the lifting member 30 pushes the counterweight 112 to drive the connecting part 113 and the clamping part 111 to rise, the clamping part 111 separates from the wafer 200.
[0053] Furthermore, in some embodiments, the base 12 further includes a limiting hole 122, which is arranged and communicates with the first mounting groove 121 along the direction of gravity. The connecting portion 113 passes through the limiting hole 122, and the wall of the limiting hole 122 abuts against the clamping member 11, thereby limiting the rotation angle of the clamping member 11. This is to prevent the clamping member 11 from rotating too much and causing a large impact on the wafer 200 during the clamping process, thus ensuring that the clamping member 11 causes minimal damage to the wafer 200 when clamping it. In addition, the wall of the limiting hole 122 is positioned between the heating plate 20 and the connecting portion 113, which can also reduce the damage to the heating plate 20 caused by the connecting portion 113 directly abutting against the heating plate 20 during the swinging process of the clamping member 11, and extend the service life of the chemical vapor deposition apparatus 100.
[0054] Please see Figure 4 and Figure 10In some embodiments, the connecting portion 113 includes a first segment 1133 and a second segment 1134, and the pressing portion 111, the first segment 1133, the second segment 1134, and the counterweight portion 112 are connected in sequence, with the first segment 1133 and the second segment 1134 forming an obtuse angle (e.g., ...). Figure 10 (As shown in the middle angle F). This design allows the clamping member 11 to swing only within a small range, reducing the impact of the clamping member 11 on the wafer 200 and heating plate 20 during the swinging process, and facilitating the extension of the service life of the chemical vapor deposition apparatus 100.
[0055] Please see Figure 4 , Figure 9 and Figure 10 In some embodiments, the counterweight 112 has a shaft-shaped structure, and the connecting part 113 has a first mounting hole 1131, through which the counterweight 112 passes and is held in the first mounting hole 1131. This design facilitates the assembly of the counterweight 112 and the connecting part 113.
[0056] In some embodiments, the base 12 has a second mounting hole 123 extending through it in a direction perpendicular to and horizontal to the radial direction of the heating plate 20. The second mounting hole 123 communicates with the first mounting slot 121, and the connecting part 113 has a third mounting hole 1132. The clamping assembly 10 also includes a rotating shaft 13, which passes through the second mounting hole 123 and the third mounting hole 1132 and is rotatably connected to the base 12 and the connecting part 113. The design of the rotating shaft 13 allows the clamping member 11 to rotate, ultimately achieving the purpose of clamping or releasing the wafer 200. The second mounting hole 123 on the base 12 and the third mounting hole 1132 on the connecting part 113 facilitate the installation of the rotating shaft 13.
[0057] Of course, in other embodiments, the rotatable connection between the base 12 and the connecting portion 113 can also take other forms. For example, in some embodiments, the base 12 has a second mounting hole 123, and the connecting portion 113 has a protruding structure forming a rotating shaft 13, which is rotatably inserted through the second mounting hole 123. Alternatively, in other embodiments, the base 12 has a protruding structure forming a rotating shaft 13, and the connecting portion 113 has a third mounting hole 1132, which is rotatably inserted through the third mounting hole 1132.
[0058] Please see Figure 5 , Figure 6 and Figure 10In some embodiments, the heating plate 20 is provided with a plurality of second mounting slots 21 arranged along its circumference. The second mounting slots 21 penetrate the heating plate 20 along the direction of gravity and correspond one-to-one with the base 12. The two sidewalls 211 of the second mounting slots 21 are respectively engaged with the corresponding base 12 to facilitate the assembly and disassembly of the heating plate 20 and the base 12, and to improve the stability and reliability of the assembly of the heating plate 20 and the base 12.
[0059] Specifically, the two sidewalls 211 of the second mounting slot 21, which are arranged opposite each other along the circumference of the heating plate 20, are each constructed with either a recess 124 or a protrusion 22. The base 12 has the other one of a recess 124 or a protrusion 22 on both opposite sides along its length direction. In the corresponding second mounting slot 21 and the clamping assembly 10, the recess 124 and the protrusion 22 are matched one-to-one.
[0060] Of course, in some other embodiments, the base 12 can also be detachably connected to the heating plate 20 by screws, pins or other detachable parts to facilitate the replacement of the clamping assembly 10.
[0061] In some embodiments, the second mounting slot 21 has a connecting slot wall 212 connecting the two opposing slot sidewalls 211. The surface of the base 12 facing away from the connecting slot wall 212 does not exceed the peripheral side surface of the heating plate 20, and the top surface of the base 12 does not exceed the top surface of the heating plate 20. In this way, the base 12 can fill the position of the second mounting slot 21 on the heating plate 20, realize the integrity of the heating plate 20, and ensure that the heating plate 20 has better mechanical strength.
[0062] In some embodiments, the lifting member 30 has a ring structure and extends circumferentially along the heating plate 20, with the projections of each counterweight 112 in the direction of gravity falling at least partially into the lifting member 30. Thus, a single lifting member 30 can simultaneously control the swinging of multiple clamping members 11, enabling the multiple clamping members 11 to release the wafer 200 synchronously. Furthermore, this design is simple and reliable, facilitating a reduction in the manufacturing cost of the chemical vapor deposition apparatus 100.
[0063] It is worth mentioning that, in this embodiment, the lifting member 30 is also arranged circumferentially around the support column 50 to achieve avoidance between it and the support column 50.
[0064] In the aforementioned chemical vapor deposition apparatus 100, when the apparatus is in the clamping state, the lifting member 30 descends and separates from each clamping member 11. Each clamping member 11, under its own gravity, presses the wafer 200 firmly against the top surface of the heating plate 20, reducing the likelihood of the wafer 200 shifting or warping relative to the heating plate 20 due to external influences during deposition, thus improving the deposition effect. When the chemical vapor deposition apparatus 100 is in the released state, the lifting member 30 rises and pushes against each clamping member 11, separating the clamping members 11 from the wafer 200 for easier handling of the wafer 200.
[0065] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0066] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.
Claims
1. A chemical vapor deposition apparatus, characterized in that, The chemical vapor deposition apparatus includes a heating plate (20), a lifting component (30), and multiple clamping components (10). The heating plate (20) and the lifting component (30) are arranged vertically along the direction of gravity. All the clamping components (10) are installed on the heating plate (20) and arranged around the circumference of the heating plate (20). Each clamping component (10) includes a clamping component (11). The chemical vapor deposition apparatus has a pressing state in which the lifting member (30) descends and separates from each of the pressing members (11), and each of the pressing members (11) presses the wafer (200) against the top surface of the heating plate (20) under its own gravity; the chemical vapor deposition apparatus also has a releasing state in which the lifting member (30) rises and pushes against each of the pressing members (11) to separate each of the pressing members (11) from the wafer (200).
2. The chemical vapor deposition apparatus according to claim 1, characterized in that, The clamping assembly (10) also includes a base (12), on which a first mounting groove (121) is provided that is radially through the heating plate (20), and the first mounting groove (121) extends to the bottom surface of the base (12) along the direction of gravity. The clamping member (11) includes a clamping part (111), a connecting part (113), and a counterweight part (112) connected in sequence. The clamping part (111) protrudes from the top surface of the base (12), the counterweight part (112) protrudes from the bottom surface of the base (12), and the connecting part (113) is at least partially inserted into the first mounting through groove (121) and is rotatably connected to the groove wall of the first mounting through groove (121).
3. The chemical vapor deposition apparatus according to claim 2, characterized in that, The base (12) further includes a limiting hole (122), which is arranged and connected with the first mounting through groove (121) along the direction of gravity. The connecting part (113) passes through the limiting hole (122), and the hole wall of the limiting hole (122) abuts against the clamping member (11).
4. The chemical vapor deposition apparatus according to claim 2, characterized in that, The connecting part (113) includes a first section (1133) and a second section (1134). The pressing part (111), the first section (1133), the second section (1134) and the counterweight part (112) are connected in sequence. The first section (1133) and the second section (1134) are set at an obtuse angle.
5. The chemical vapor deposition apparatus according to claim 2, characterized in that, The counterweight (112) has a shaft-shaped structure, and the connecting part (113) has a first mounting hole (1131). The counterweight (112) passes through and is held in the first mounting hole (1131).
6. The chemical vapor deposition apparatus according to claim 2, characterized in that, The heating plate (20) is provided with a plurality of second mounting slots (21) arranged along its circumference. The second mounting slots (21) penetrate the heating plate (20) along the direction of gravity and correspond one-to-one with the base (12). The two sidewalls (211) of the second mounting slots (21) arranged opposite to each other are in concave-convex fit with the corresponding base (12).
7. The chemical vapor deposition apparatus according to claim 6, characterized in that, The second mounting slot (21) has a connecting slot wall (212) connected between two opposing slot sidewalls (211), the surface of the base (12) facing away from the connecting slot wall (212) does not exceed the peripheral side surface of the heating plate (20), and the top surface of the base (12) does not exceed the top surface of the heating plate (20).
8. The chemical vapor deposition apparatus according to claim 2, characterized in that, The lifting component (30) has a ring structure and extends circumferentially along the heating plate (20). The projections of each of the weights (112) in the direction of gravity fall at least partially into the lifting component (30).
9. The chemical vapor deposition apparatus according to claim 2, characterized in that, The base (12) has a second mounting hole (123) that extends through the heating plate (20) in a direction that is perpendicular to the radial direction and horizontal. The second mounting hole (123) communicates with the first mounting through groove (121). The connecting part (113) has a third mounting hole (1132). The clamping assembly (10) also includes a rotating shaft (13), which passes through the second mounting hole (123) and the third mounting hole (1132) and is rotatably connected to the base (12) and the connecting part (113).
10. The chemical vapor deposition apparatus according to claim 1, characterized in that, The chemical vapor deposition apparatus further includes a support column (50) supported on the bottom side of the heating plate (20); and / or, the chemical vapor deposition apparatus further includes a lifting drive, which is connected to the lifting member (30) and is used to drive the lifting member (30) to rise or fall.