Manifold cooling device of semiconductor equipment
By setting a cooling structure and cooling cavity on the manifold body and introducing a cooling medium, the problem of excessively high temperature in the manifold caused by heat radiation from the heater is solved, achieving heat insulation and cooling of the manifold body and ensuring the stability of wafer processing.
Patent Information
- Application Number
- CN202520188503.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-06
- Publication Date
- 2026-01-27
- Estimated Expiration
- 2035-02-06
AI Technical Summary
During wafer fabrication, the manifold can become too hot due to the heat radiation from the heater, causing the precursor to decompose and affecting the reaction process.
A cooling structure is installed on the manifold body to form a cooling chamber, through which a cooling medium is introduced to insulate and cool, preventing the precursor from decomposing due to excessive temperature.
It effectively isolates heat radiation, maintains a stable temperature of the manifold body, prevents the precursor from being decomposed by heat, and ensures the smooth progress of the wafer processing.
Smart Images
Figure CN223840769U_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor equipment technology, and more particularly to a manifold cooling device for semiconductor equipment. Background Technology
[0002] During the wafer fabrication process, precursors are introduced into the wafer chamber. Some of these precursors are prone to decomposition at higher temperatures, affecting the chamber environment, leading to defects on the wafer, and hindering the reaction process.
[0003] In the prior art, since the manifold is located directly above the heater, it is affected by the heat radiation of the heater, and may have a high temperature in some cases, causing the precursor in the manifold to decompose at high temperature, affecting the reaction process.
[0004] Therefore, it is necessary to provide a new manifold cooling device for semiconductor devices to solve the aforementioned problems existing in the prior art. Summary of the Invention
[0005] The purpose of this invention is to provide a manifold cooling device for semiconductor equipment, which cools the manifold body and improves the problem of precursor thermal decomposition caused by high manifold body temperature, thus affecting wafer processing.
[0006] To achieve the above objectives, the technical solution of the present invention is as follows:
[0007] A manifold cooling device for a semiconductor device, comprising:
[0008] The manifold body is hollow.
[0009] A cooling structure is disposed on the manifold body, and the cavity between the cooling structure and the manifold body forms a cooling chamber.
[0010] The inner wall of the cooling cavity has multiple arc-shaped portions to form protrusions and / or recesses inside the cooling cavity;
[0011] The cooling medium is introduced into the cooling chamber to adjust the manifold body to a suitable temperature.
[0012] By adopting the above technical solution, a cooling structure is set on the manifold body. During the process of introducing the precursor into the manifold body, the cooling structure has a heat insulation function and can also cool the manifold body. When the heat radiation from the heater reaches the manifold body, the cooling structure can effectively isolate the heat radiation. The cooling structure can either introduce a cooling medium to cool the manifold body when its temperature is higher than the target temperature, or continuously introduce a cooling medium to keep the temperature of the manifold body constant. This reduces the possibility of thermal decomposition of the precursor due to excessively high temperature at the manifold body, which could affect the wafer processing.
[0013] Optionally, the cooling structure is annular and passes through the interior of the manifold body. There is a certain gap between the outer wall of the cooling structure and the inner wall of the manifold body to form the cooling cavity. The arc-shaped portion is provided on the side wall of the cooling structure.
[0014] The manifold body has an inlet hole and an outlet hole on its side wall;
[0015] The cooling medium enters the cooling chamber through the inlet hole and is transferred to the outside of the cooling chamber through the outlet hole.
[0016] By adopting the above technical solution, the cooling structure is set inside the manifold body, the precursor passes through the cooling structure, and a cooling cavity is formed between the manifold body and the cooling structure. The cooling medium in the cooling cavity has a heat insulation effect, preventing the precursor in the manifold body from being decomposed due to excessively high temperature.
[0017] Optionally, the cooling structure is annular and sleeved on the manifold body, with a certain gap between the inner wall of the cooling structure and the outer wall of the manifold body to form the cooling cavity, and the arc-shaped portion is provided on the side wall of the manifold body.
[0018] The cooling structure has an inlet hole and an outlet hole on its side wall;
[0019] The cooling medium enters the cooling chamber through the inlet hole and is transferred to the outside of the cooling chamber through the outlet hole.
[0020] By adopting the above technical solution, the cooling structure is set outside the manifold body, the precursor passes through the manifold body, and a cooling cavity is formed between the manifold body and the cooling structure. The cooling medium in the cooling cavity has a heat insulation effect, preventing the precursor in the manifold body from being decomposed due to excessively high temperature.
[0021] Optionally, the cooling structure is annular and sleeved on the manifold body, with the inner sidewall of the cooling structure attached to the outer sidewall of the manifold body, and the arc-shaped portion disposed on the sidewall of the manifold body and the inner wall of the cooling structure.
[0022] The sidewalls of the cooling structure are hollow, forming the cooling cavity;
[0023] The outer wall of the cooling structure is provided with an inlet hole and an outlet hole;
[0024] The cooling medium enters the cooling chamber through the inlet hole and is transferred to the outside of the cooling chamber through the outlet hole. The temperature of the cooling medium is conducted to the manifold body through the side wall of the cooling structure.
[0025] By adopting the above technical solution, the cooling structure is set inside the manifold body, the precursor passes through the cooling structure, and the inner wall of the cooling structure is hollow to form a cooling cavity. The cooling medium in the cooling cavity has a heat insulation effect, preventing the precursor in the manifold body from being decomposed due to excessively high temperature.
[0026] Optionally, both the discharge port and the inlet port are formed on the top wall of the manifold body;
[0027] Alternatively, both the discharge port and the inlet port may be located on the side wall of the manifold body;
[0028] Alternatively, the discharge port may be located on the top wall of the manifold body, and the inlet port may be located on the side wall of the manifold body.
[0029] When both the discharge port and the inlet port are located on the side wall of the manifold body, the position of the discharge port in the height direction is higher than that of the inlet port in the height direction.
[0030] By adopting the above technical solution, when both the discharge port and the inlet port are opened on the side wall of the manifold body, the position of the discharge port in the height direction is higher than that of the inlet port in the height direction. This allows the cooling medium to gradually accumulate in the cooling chamber after entering it. When the accumulated height reaches the height of the exhaust port, it is discharged from the discharge port, so that the cooling medium is fully utilized, which helps to maintain the stability of the manifold body temperature and also helps to isolate the heat radiation of the heater.
[0031] Optionally, both the discharge port and the inlet port are formed on the top wall of the cooling structure;
[0032] Alternatively, both the discharge port and the inlet port may be located on the side wall of the cooling structure;
[0033] Alternatively, the discharge hole may be located on the top wall of the cooling structure, and the inlet hole may be located on the side wall of the cooling structure;
[0034] When both the discharge port and the inlet port are located on the side wall of the cooling structure, the position of the discharge port in the height direction is higher than that of the inlet port in the height direction.
[0035] By adopting the above technical solution, when both the discharge port and the inlet port are opened on the side wall of the manifold body, the position of the discharge port in the height direction is higher than that of the inlet port in the height direction. This allows the cooling medium to gradually accumulate in the cooling chamber after entering it. When the accumulated height reaches the height of the exhaust port, it is discharged from the discharge port, so that the cooling medium is fully utilized, which helps to maintain the stability of the manifold body temperature and also helps to isolate the heat radiation of the heater.
[0036] A semiconductor device includes a reaction chamber, a cover, and a manifold cooling device;
[0037] The reaction chamber has an opening;
[0038] The cover is fixedly disposed in the reaction chamber and is used to open or close the opening. A connecting hole is provided on the cover.
[0039] The manifold body is fixedly mounted on the cover and communicates with the interior of the reaction chamber through the connecting hole.
[0040] By adopting the above technical solution, the manifold body is fixedly mounted on the cover and communicates with the inside of the reaction chamber through the connecting hole, so that the precursor in the manifold body can enter the inside of the reaction chamber, thereby facilitating the wafer processing process.
[0041] Optionally, it also includes a first supply device, the first supply device having a first pipe and a second pipe, the first pipe communicating with the inlet and the second pipe communicating with the outlet;
[0042] In operation, the cooling medium in the first supply device enters the cooling chamber through the first pipe and the inlet, and the cooling medium in the cooling chamber enters the first supply device through the outlet and the second pipe to stabilize the temperature of the cooling medium.
[0043] By adopting the above technical solution, the first supply device is used to supply the cooling medium, and through the first pipe and the second pipe, the cooling medium circulates in the cooling chamber, thereby stabilizing the temperature at the manifold body.
[0044] Optionally, it may also include a second supply device having a transmission conduit connected to the manifold body, the transmission conduit being used to transmit the precursor provided by the second supply device into the manifold body.
[0045] By adopting the above technical solution, during the operation, the second supply device is used to provide the precursor, which is transmitted to the manifold body through the transmission pipe and transferred to the inside of the reaction chamber to participate in the wafer processing process.
[0046] Optionally, a sealing groove is provided on the cover, and a sealing element is fixedly installed in the sealing groove. When the cover closes the opening of the reaction chamber, the sealing element seals the connection between the cover and the reaction chamber.
[0047] By adopting the above technical solution, when the cover closes the opening of the reaction chamber, the sealing element seals the connection between the cover and the reaction chamber, reducing the possibility of gas in the reaction chamber diffusing from the connection between the cover and the reaction chamber to the outside of the chamber.
[0048] The beneficial effects of the manifold cooling device for semiconductor equipment provided by the present invention include at least the following:
[0049] 1. A cooling structure is installed on the manifold body. The cooling structure has a heat insulation function and can also cool the manifold body. When the heat radiation from the heater reaches the manifold body, the cooling structure can effectively isolate the heat radiation. At the same time, when the temperature of the manifold body is higher than the target temperature, it can cool the manifold body.
[0050] 2. The cooling structure can be set inside or outside the manifold body according to the usage requirements. At the same time, the cooling structure can achieve the functions of heat insulation and cooling whether it is set inside or outside the manifold body. Attached Figure Description
[0051] Figure 1 This is a schematic diagram of the connection position of the manifold body on a semiconductor device according to an embodiment of the present invention;
[0052] Figure 2 This is a schematic diagram showing the positional relationship of the cooling structure in an embodiment of the present invention inside the manifold body, with a cooling cavity formed between them;
[0053] Figure 3 This is a schematic diagram showing that, in an embodiment of the present invention, the cooling structure is located inside the manifold body, with both the inlet and outlet ports positioned on the top wall of the manifold body.
[0054] Figure 4 This is a schematic diagram showing that, in an embodiment of the present invention, the cooling structure is located inside the manifold body, with both the inlet and outlet ports positioned on the side wall of the manifold body.
[0055] Figure 5 This is a schematic diagram showing the positional relationship of the cooling structure in an embodiment of the present invention when it is located outside the manifold body and a cooling cavity is formed between them.
[0056] Figure 6 This is a schematic diagram showing the positional relationship of the cooling structure in an embodiment of the present invention when it is located outside the manifold body and the cooling structure has a hollow sidewall forming a cooling cavity.
[0057] Figure 7This is a schematic diagram of the cooling structure of this invention being located outside the manifold body, with both the inlet and outlet holes placed on the top wall of the cooling structure.
[0058] Figure 8 This is a schematic diagram of the cooling structure of this invention being located outside the manifold body, with both the inlet and outlet holes placed on the side wall of the cooling structure.
[0059] Figure 9 yes Figure 1 Enlarged view of section A in the middle.
[0060] Figure label:
[0061] 100. Manifold body; 200. Cooling structure; 210. Cooling chamber; 300. Inlet port; 400. Outlet port; 500. Reaction chamber; 510. Opening; 600. Cover; 610. Sealing groove; 620. Sealing element; 630. Connecting hole; 700. First supply device; 710. First pipe; 720. Second pipe; 800. Second supply device; 810. Transmission pipe; 900. Arc-shaped section. Detailed Implementation
[0062] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.
[0063] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.
[0064] Reference Figure 1-9This invention provides a manifold cooling device for a semiconductor device. The manifold cooling device is used in a semiconductor device to cool the manifold within the device. The manifold cooling device includes a manifold body 100, which is fixedly mounted on a cover 600 of the semiconductor device. The axial direction of the cover 600 is defined as the height direction. The manifold body 100 is hollow, and the interior of the manifold body 100 is used to pass a precursor. After passing through the manifold body 100, the precursor enters the semiconductor device to participate in the wafer processing. A cooling structure 200 is fixedly mounted on the manifold body 100. The fixing method can be bonding, welding, or integral molding, etc. In this embodiment, welding is preferred. The cooling structure 200 has a cooling cavity 210, which can be formed between the sidewall of the cooling structure 200 and the sidewall of the manifold body 100, or it can be formed within the hollow interior of the cooling structure 200, as will be described later. The inner wall of the cooling cavity 210 has multiple arc-shaped portions 900 to facilitate cooling. The interior of cavity 210 forms protrusions and / or recesses; that is, only protrusions may be formed on the inner wall of cooling cavity 210; or only recesses may be formed on the inner wall of cooling cavity 210; or both protrusions and recesses may be formed on the inner wall of cooling cavity 210, for example, both protrusions and recesses may be formed on the same inner sidewall, or on different inner sidewalls. Furthermore, the shape is not limited to the rectangular channel or semi-circular protrusion shown in the figure. In actual use, the shape can be adapted according to the actual application, such as a circular channel, a regular polygonal channel, or an irregular polygonal channel, or a rectangular protrusion, an irregularly shaped protrusion, etc. It is worth noting that here, a protrusion refers to a protrusion formed from the portion of cooling cavity 210 through which the cooling medium flows towards the portion through which the precursor flows; a recess refers to a cavity formed from the portion of cooling cavity 210 through which the cooling medium flows towards the portion through which the precursor flows. In this embodiment, only a protrusion is used as an example; in actual use, a suitable arrangement of protrusions and recesses can be selected according to the actual application.
[0065] By providing an arc-shaped portion 900, a protrusion and / or a recess are formed inside the cooling cavity 210 to increase the contact area between the cooling cavity 210 and the precursor, so as to control the temperature of the precursor flowing through the manifold body 100.
[0066] A cooling medium can be introduced into the cooling chamber 210 to cool the manifold body 100 and maintain its temperature. The cooling medium can be either a cooling gas or a coolant; in this embodiment, a coolant is selected. During operation, the precursor passes through the manifold body 100 and is distributed to the reaction chamber 500 of the semiconductor device. When the temperature of the manifold body 100 rises due to the heat radiation of the heater, exceeding the target temperature, the cooling medium is introduced into the cooling chamber 210 to cool the manifold body 100, bringing its temperature back to the target level. If the temperature is below the target temperature, the precursor in the manifold body 100 will not be thermally decomposed, affecting the wafer processing. Alternatively, cooling medium can be introduced into the cooling chamber 210 only when the temperature of the manifold body 100 is above the target temperature; or cooling medium can be introduced into the cooling chamber 210 stably for a long period. When cooling medium is introduced into the cooling chamber 210 stably for a long period, a first supply device 700 is required to circulate the cooling medium in the cooling chamber 210 to stabilize the temperature in the cooling chamber 210, as described in detail later. In specific use, different cooling medium introduction methods can be selected according to requirements.
[0067] Reference Figure 1-9The cooling structure 200 is fixedly disposed on the inner sidewall of the manifold body 100. The fixing method can be bonding, welding, or integral molding, etc. In this embodiment, welding is preferred. Specifically, the cooling structure 200 is annular and passes through the interior of the manifold body 100. The gap between the inner sidewall of the manifold body 100 and the sidewall of the cooling structure 200 forms a cooling cavity 210. An arc-shaped portion 900 is disposed on the sidewall of the cooling structure 200, and the precursor passes through the interior of the cooling structure 200. The arc-shaped portion 900 increases the contact area between the precursor and the cooling structure 200. The sidewall of the manifold body 100 has an inlet hole 300 and an outlet hole 400. Both the inlet hole 300 and the outlet hole 400 penetrate the manifold body 100 along the thickness direction of the sidewall. Both the inlet hole 300 and the outlet hole 400 communicate with the cooling cavity 210, and external cooling medium enters the cooling cavity 210 through the inlet hole 300. Meanwhile, the cooling medium inside the cooling cavity 210 can be transferred to the outside of the cooling cavity 210 through the discharge hole 400, which facilitates the circulation of the cooling medium. In this scheme, the precursor passes through the cooling structure 200, and the cooling medium contacts the inner wall of the cooling structure 200, which facilitates the cooling of the precursor inside the cooling structure 200, thereby facilitating the stabilization of the temperature of the manifold body 100. When the heat radiation of the heater causes the temperature of the manifold body 100 to rise, under the action of the cooling structure 200 and the cooling medium, the increased temperature will not affect the precursor inside the manifold body 100, thus not affecting the wafer processing process. Alternatively, the outer wall of the cooling structure 200 can be attached to the inner wall of the manifold body 100, and the side wall of the cooling structure 200 can be hollow to form the cooling cavity 210. The inlet hole 300 and the outlet hole 400 simultaneously penetrate the side wall of the manifold body 100 and the side wall of the cooling structure 200 and the cooling cavity 210, which are connected.
[0068] The inlet hole 300 and the outlet hole 400 can be formed on the top wall of the manifold body 100 along the height direction; or they can be formed on the side wall of the manifold body 100; or the inlet hole 300 can be formed on the side wall of the manifold body 100 and the outlet hole 400 can be formed on the top of the manifold body 100. When the inlet hole 300 and the outlet hole 400 are formed on the side wall of the manifold body 100, the outlet hole 400 is positioned higher in the height direction than the inlet hole 300. This arrangement allows the cooling medium to gradually accumulate in the cooling chamber 210 after entering it. When the accumulated height reaches the height of the outlet hole, it is discharged from the outlet hole 400, so that the cooling medium is fully utilized, which helps to maintain the temperature stability of the manifold body 100 and also helps to isolate the heat radiation of the heater.
[0069] Reference Figure 1-9The cooling structure 200 can also be fixedly disposed on the outer wall of the manifold body 100. The fixing method can be bonding, welding, or integral molding, etc. In this embodiment, welding is preferred. Specifically, the cooling structure 200 is annular and sleeved on the manifold body 100. The gap between the outer wall of the manifold body 100 and the side wall of the cooling structure 200 forms a cooling cavity 210. At this time, the arc-shaped portion 900 is disposed on the side wall of the manifold body 100, and the precursor passes through the inside of the manifold body 100. The arc-shaped portion 900 increases the contact area between the precursor and the manifold body 100. The side wall of the cooling structure 200 has an inlet hole 300 and an outlet hole 400. Both the inlet hole 300 and the outlet hole 400 penetrate the manifold body 100 along the thickness direction of the side wall. Both the inlet 300 and the outlet 400 are connected to the cooling chamber 210. The external cooling medium enters the cooling chamber 210 through the inlet 300, while the cooling medium inside the cooling chamber 210 can be transferred to the outside of the cooling chamber 210 through the outlet 400, which facilitates the circulation of the cooling medium. In this scheme, the precursor passes through the manifold body 100, and the cooling medium directly contacts the side wall of the manifold body 100, which helps to keep the temperature of the manifold body 100 stable. When the heat radiation of the heater raises the temperature of the manifold body 100, it will first radiate to the cooling structure 200. Under the action of the cooling structure 200 and the cooling medium, the heat will not radiate to the side wall of the manifold body 100, and the radiated temperature will not affect the precursor inside the manifold body 100, thus not affecting the wafer processing process.
[0070] In addition, the cooling structure 200 can also be hollow. Specifically, when the cooling structure 200 is fixedly installed on the outer wall of the manifold body 100, the cooling structure 200 is annular and sleeved on the manifold body 100. The inner wall of the cooling structure 200 is attached to the outer wall of the manifold body 100, and the side wall of the cooling structure 200 is hollow, forming a cooling cavity 210. At this time, the arc-shaped portion 900 is provided on the side wall of the manifold body 100 and the inner wall of the cooling structure 200, so that the two can fit together. The precursor passes through the inside of the manifold body 100. The arc-shaped portion 900 increases the contact area between the precursor and the manifold body 100. At the same time, the side wall of the cooling structure 200 is provided with an inlet hole 300 and an outlet hole 400. The inlet hole 300 and the outlet hole 400 are along the thickness direction of the side wall of the cooling structure 200. The sidewall of the cooling structure 200 is through-through, and both the inlet hole 300 and the outlet hole 400 are connected to the cooling cavity 210. The external cooling medium enters the cooling cavity 210 through the inlet hole 300, while the cooling medium inside the cooling cavity 210 can be transferred to the outside of the cooling cavity 210 through the outlet hole 400. The temperature of the cooling medium is conducted to the sidewall of the manifold body 100 through the sidewall of the cooling structure 200, which helps to keep the temperature of the manifold body 100 stable. When the heat radiation of the heater raises the temperature of the manifold body 100, it will first radiate to the cooling structure 200. Under the action of the cooling structure 200 and the cooling medium, the heat will not radiate to the sidewall of the manifold body 100, and the radiated temperature will not affect the precursor inside the manifold body 100, thus not affecting the wafer processing process.
[0071] The inlet hole 300 and the outlet hole 400 can be formed on the top wall of the cooling structure 200 along the height direction, or on the side wall of the cooling structure 200. Alternatively, the outlet hole 400 can be formed on the top wall of the cooling structure 200, and the inlet hole 300 can be formed on the side wall of the cooling structure 200. When the inlet hole 300 and the outlet hole 400 are formed on the side wall of the cooling structure 200, the outlet hole 400 is positioned higher in the height direction than the inlet hole 300. This arrangement allows the cooling medium to gradually accumulate in the cooling chamber 210 after entering it. When the accumulated height reaches the height of the outlet hole, it is discharged from the outlet hole 400, ensuring that the cooling medium is fully utilized. This helps to maintain the temperature stability of the manifold body 100 and also helps to isolate the heat radiation from the heater.
[0072] A semiconductor device includes a cover 600, a reaction chamber 500, a heater, and a manifold cooling device. The reaction chamber 500 has an opening 510 for placing a wafer, which is processed inside the reaction chamber 500. The cover 600 is disposed on the reaction chamber 500. Specifically, the cover 600 is rotatably connected to the reaction chamber 500 via a pivot shaft, used to open or close the opening 510 of the reaction chamber 500. A connecting hole 630 is provided on the cover 600, penetrating through it and communicating with the reaction chamber 500. A manifold body 100 is fixedly disposed on the cover 600, and its fixing method can be... For bonding, welding, or bolting, in this embodiment, the manifold body 100 is fixed to the cover 600 by bolts. Simultaneously, the manifold body 100 communicates with the connecting hole 630, thereby communicating with the interior of the reaction chamber 500. This allows the precursor to enter the reaction chamber 500 through the manifold and participate in the wafer processing. Furthermore, the semiconductor equipment also includes a heater. During heating, the heater radiates heat to the manifold body 100. Under the action of the cooling structure 200, the heat radiation does not heat the precursor inside the manifold body 100, thus facilitating the wafer processing.
[0073] Reference Figure 1-9The semiconductor device also includes a first supply device 700, which supplies a cooling medium. In this embodiment, the cooling medium is a coolant. The first supply device 700 has a first pipe 710 and a second pipe 720. The first pipe 710 is connected to an inlet 300, and the second pipe 720 is connected to an outlet 400, so that the first supply device 700 is connected to both the inlet 300 and the outlet 400. In operation, the first supply device 700 supplies coolant, which enters the cooling chamber 210 through the first pipe 710 and the inlet 300 and circulates within the cooling chamber 210. The cooling medium in the cooling chamber 210 is discharged to the outside of the cooling chamber 210 through the outlet 400 and the second pipe 720 and flows back into the first supply device 700, thus achieving circulation of the cooling medium within the cooling chamber 210 and maintaining a stable temperature in the cooling chamber 210. In addition, the semiconductor device also includes a second supply device 800, which supplies a precursor and has a transmission pipe. 810, one end of the transmission pipe 810 is connected to the second supply device 800, and the other end is connected to the manifold body 100. The precursor provided by the second supply device 800 enters the manifold body 100 through the transmission pipe 810, thereby entering the reaction chamber 500, facilitating the wafer processing. In addition, a sealing groove 610 is provided on the cover 600, and a sealing element 620 is fixedly installed in the sealing groove 610. The fixing method can be snap-fit, bolt fixing or adhesive fixing, etc. In this embodiment, a sealing element is preferred. The sealing element 620 is fixedly mounted on the sealing groove 610 by adhesive bonding. The sealing element 620 is annular and mainly serves a sealing function. It can be made of silicone, rubber, or other materials that can achieve a sealing function. In this embodiment, no limitation is made. In the working state, the cover 600 is connected to the reaction chamber 500, closing the opening 510. At the same time, the sealing element 620 seals the connection between the cover 600 and the reaction chamber 500, thereby enabling the reaction chamber 500 to maintain a vacuum state, which facilitates the wafer processing process.
[0074] The implementation principle of the manifold cooling device for a semiconductor device according to the embodiments of this application is as follows: during the wafer processing, a cooling medium is introduced into the cooling cavity 210 to circulate the cooling medium within the cooling cavity 210, so that the heat radiation of the heater cannot heat the precursor in the manifold body 100 during operation, thereby not affecting the wafer processing.
[0075] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.
Claims
1. A manifold cooling device for a semiconductor device, characterized in that, include: The manifold body (100) is hollow; A cooling structure (200) is disposed on the manifold body (100), and the cavity between the cooling structure (200) and the manifold body (100) forms a cooling cavity (210). The inner wall of the cooling cavity (210) has a plurality of arc-shaped portions (900) to form protrusions and / or recesses inside the cooling cavity (210); Cooling medium is introduced into the cooling chamber (210) to regulate the temperature of the manifold body (100).
2. The manifold cooling device according to claim 1, characterized in that, The cooling structure (200) is annular and passes through the interior of the manifold body (100). There is a certain gap between the outer wall of the cooling structure (200) and the inner wall of the manifold body (100) to form the cooling cavity (210). The arc-shaped part (900) is provided on the side wall of the cooling structure (200). The manifold body (100) has an inlet hole (300) and an outlet hole (400) on its side wall; The cooling medium enters the cooling chamber (210) through the inlet hole (300) and is transferred to the outside of the cooling chamber (210) through the outlet hole (400).
3. The manifold cooling device according to claim 1, characterized in that, The cooling structure (200) is annular and sleeved on the manifold body (100). There is a certain gap between the inner sidewall of the cooling structure (200) and the outer sidewall of the manifold body (100) to form the cooling cavity (210). The arc-shaped part (900) is provided on the sidewall of the manifold body (100). The cooling structure (200) has an inlet hole (300) and an outlet hole (400) on its side wall; The cooling medium enters the cooling chamber (210) through the inlet hole (300) and is transferred to the outside of the cooling chamber (210) through the outlet hole (400).
4. The manifold cooling device according to claim 1, characterized in that, The cooling structure (200) is annular and sleeved on the manifold body (100). The inner sidewall of the cooling structure (200) is attached to the outer sidewall of the manifold body (100). The arc-shaped part (900) is provided on the sidewall of the manifold body (100) and the inner wall of the cooling structure (200). The sidewalls of the cooling structure (200) are hollow, forming the cooling cavity (210); The outer wall of the cooling structure (200) is provided with an inlet hole (300) and an outlet hole (400); The cooling medium enters the cooling chamber (210) through the inlet (300) and is transferred to the outside of the cooling chamber (210) through the outlet (400). The temperature of the cooling medium is conducted to the manifold body (100) through the side wall of the cooling structure (200).
5. The manifold cooling device according to claim 2, characterized in that, Both the discharge port (400) and the inlet port (300) are located on the top wall of the manifold body (100); Alternatively, both the discharge port (400) and the inlet port (300) may be located on the side wall of the manifold body (100); Alternatively, the discharge port (400) may be located on the top wall of the manifold body (100), and the inlet port (300) may be located on the side wall of the manifold body (100). When both the discharge port (400) and the inlet port (300) are located on the side wall of the manifold body (100), the position of the discharge port (400) in the height direction is higher than the position of the inlet port (300) in the height direction.
6. The manifold cooling device according to claim 3 or 4, characterized in that, Both the discharge port (400) and the inlet port (300) are located on the top wall of the cooling structure (200); Alternatively, both the discharge port (400) and the inlet port (300) may be located on the side wall of the cooling structure (200); Alternatively, the discharge hole (400) may be located on the top wall of the cooling structure (200), and the inlet hole (300) may be located on the side wall of the cooling structure (200); When both the discharge hole (400) and the inlet hole (300) are opened on the side wall of the cooling structure (200), the position of the discharge hole (400) in the height direction is higher than the position of the inlet hole (300) in the height direction.
7. A semiconductor device, characterized in that, It includes a reaction chamber (500), a cover (600), and a manifold cooling device as described in any one of claims 1-6; The reaction chamber (500) has an opening (510); The cover (600) is fixedly disposed in the reaction chamber (500) and is used to open or close the opening (510). A connecting hole (630) is provided on the cover (600). The manifold body (100) is fixedly disposed on the cover (600) and communicates with the interior of the reaction chamber (500) through the connecting hole (630).
8. The semiconductor device according to claim 7, characterized in that, It also includes a first supply device (700), which has a first pipe (710) and a second pipe (720), the first pipe (710) being connected to the inlet (300) and the second pipe (720) being connected to the outlet (400); In operation, the cooling medium in the first supply device (700) enters the cooling chamber (210) through the first pipe (710) and the inlet (300), and the cooling medium in the cooling chamber (210) enters the first supply device (700) through the outlet (400) and the second pipe (720) to stabilize the temperature of the cooling medium.
9. The semiconductor device according to claim 7, characterized in that, It also includes a second supply device (800) having a transmission conduit (810) connected to the manifold body (100) for transmitting the precursor provided by the second supply device (800) into the manifold body (100).
10. The semiconductor device according to claim 7, characterized in that, A sealing groove (610) is provided on the cover (600), and a sealing element (620) is fixedly installed in the sealing groove (610). When the cover (600) closes the opening (510) of the reaction chamber (500), the sealing element (620) seals the connection between the cover (600) and the reaction chamber (500).