Wafer leak rate inspection bearing device

Abstract

The utility model provides a wafer leak rate test bearing device, which comprises a bearing platform for bearing wafers, a plurality of grooves are arranged on the upper end face of the bearing platform, support pads for supporting the wafers are placed in part of the grooves, and a gas channel for negative pressure gas to pass through is arranged on the bearing platform. And the gas channel is communicated with the leak rate detection mechanism. Compared with the prior art, the wafer leak detection bearing device disclosed by the utility model has the advantages that through the arrangement of the supporting pad, the phenomenon that the wafer is damaged due to negative pressure can be prevented, the detected area of the wafer can be effectively increased, and the accuracy of wafer leak rate detection can be improved.

Description

Technical Field

[0001] This utility model belongs to the field of wafer inspection technology, and specifically relates to a wafer leak rate inspection carrier device. Background Technology

[0002] With the increasing demands for high-power and high-frequency performance in emerging applications such as new energy, 5G base stations, and high-speed rail, conventional silicon wafer semiconductors can no longer meet the new standards. Third-generation semiconductor silicon carbide wafers have a strong competitive advantage due to their wide bandgap, low resistance, and good thermal and electrical conductivity. However, with the development of new technologies, the requirements for substrate silicon carbide wafers at the device end (the back-end processes of silicon carbide wafers) are also gradually increasing.

[0003] Micropipes are a common defect in silicon carbide wafers, ranging in size from hundreds of nanometers to several micrometers. This defect can cause silicon carbide wafers to fail during device use, and micropipes can also promote the formation of other defects during subsequent epitaxial processes, further reducing device yield. Therefore, they are considered fatal defects.

[0004] To accurately detect microtubes, two main detection methods are currently used. One method is to use polarized light for detection, but polarized light detection has high requirements for wafer surface roughness and cleanliness. The other method is to detect by testing whether the wafer is leaking gas. This testing method has lower requirements for wafer testing and can reduce a lot of unnecessary processing costs, so it is more commonly used.

[0005] Currently, common leak detection equipment determines whether a wafer leaks by detecting whether helium gas is passing through it. Typically, the wafer is placed in a vacuum chamber with one side as a sealing surface. A vacuum is then created on both sides of the wafer by evacuating the chamber. Finally, helium gas is sprayed onto the outside of the wafer, and the helium flow rate is measured inside the vacuum chamber to determine if there is a leak. However, wafers are generally quite thin, so a certain number of support points need to be placed inside the vacuum chamber to support the wafer and prevent it from breaking under high negative pressure. This means that the support points in contact with the wafer cannot be detected.

[0006] Therefore, how to overcome the above-mentioned technical defects is a problem that urgently needs to be solved by those skilled in the art. Utility Model Content

[0007] In view of this, the purpose of this utility model is to provide a wafer leak rate detection support device, which can not only prevent wafers from being damaged due to negative pressure, but also effectively increase the area of ​​the wafer to be detected and improve the accuracy of wafer leak rate detection.

[0008] To achieve the above objectives, this utility model provides the following technical solution:

[0009] A wafer leak rate testing support device includes a support platform for supporting the wafer. The upper surface of the support platform is provided with a plurality of grooves, some of which contain support pads for supporting the wafer. The support platform is also provided with a gas channel for negative pressure gas to pass through, and the gas channel is connected to a leak rate detection mechanism.

[0010] Optionally, the height of the support pad exceeds the depth of the groove by 1mm-5mm.

[0011] Optionally, the support platform is a circular structure that conforms to the shape of the wafer;

[0012] The groove is an annular groove, and is arranged at intervals from the center to the edge of the support platform on the upper surface of the support platform.

[0013] Optionally, the distance between any two adjacent grooves is 10mm-30mm.

[0014] Optionally, the gas channel includes:

[0015] A central channel is located at the center of the support platform and extends through the support platform;

[0016] A side passage is provided around the central passage, with one end connected to the central passage and the other end connected to the upper surface of the support platform.

[0017] Optionally, there are at least two bypass channels.

[0018] Optionally, there are 4-6 bypass channels, which are evenly arranged along the circumference of the support platform between any two adjacent annular grooves.

[0019] Optionally, the support pads are placed entirely within the grooves near the central channel;

[0020] At least two of the support pads are placed in the other grooves, and there is a predetermined distance between the two support pads.

[0021] Optionally, the support pad is an elastic pad.

[0022] Optionally, the support platform includes a support portion and a support portion, which are integrally formed. The support portion has a disc-shaped structure, and the support portion has a cylindrical structure. The diameter of the support portion is smaller than the diameter of the support portion.

[0023] As can be seen from the above technical solution, when performing wafer leak rate testing, at least two tests are required. In the first test, the wafer is placed on a support platform, with a support pad providing support. The vacuum equipment is activated, and the negative pressure gas generated by the vacuum equipment enters the groove through the gas channel, adsorbing the wafer onto the support platform. At this time, detection gas is sprayed onto the outer surface of the wafer. The leak rate testing mechanism determines whether the wafer is qualified by detecting the rate of detection gas flow through the gas channel. After the first test is completed, the wafer is rotated by a preset angle so that the part of the wafer that was in contact with the support pad during the first test is misaligned with the support pad. The vacuum equipment is then activated again, and the negative pressure gas generated by the vacuum equipment enters the groove through the gas channel, adsorbing the wafer onto the support platform. Detection gas is then sprayed onto the outer surface of the wafer again, and the leak rate testing mechanism determines whether the wafer parts that were not tested in the first test are qualified by detecting the rate of detection gas flow through the gas channel.

[0024] Compared with the prior art, the wafer leak detection support device disclosed in this embodiment of the present invention, through the setting of the support pad, can not only prevent the wafer from being damaged due to negative pressure, but also effectively increase the area of ​​the wafer to be detected and improve the accuracy of wafer leak rate detection. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0026] Figure 1 This is a top view of the wafer leak rate detection carrier device disclosed in the embodiments of this utility model;

[0027] Figure 2 This is a cross-sectional view of the wafer leak rate detection carrier device disclosed in the embodiments of this utility model.

[0028] Explanation of reference numerals in the attached figures:

[0029] 100-Supporting platform, 101-Groove, 102-Central channel, 103-Side channel, 104-Support pad. Detailed Implementation

[0030] In view of this, the core of this utility model is to provide a wafer leak rate detection support device, which can not only prevent the wafer from being damaged due to negative pressure, but also effectively increase the area of ​​the wafer to be detected and improve the accuracy of wafer leak rate detection.

[0031] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present utility model. Please refer to... Figure 1 and Figure 2 .

[0032] The wafer leak rate testing support device disclosed in this utility model embodiment includes a support platform 100 for supporting wafers. The upper surface of the support platform 100 is provided with a plurality of grooves 101. Support pads 104 for supporting wafers are placed in some of the grooves 101. The support platform 100 is also provided with a gas channel for negative pressure gas to pass through. The gas channel is connected to the leak rate detection mechanism.

[0033] When performing wafer leak rate testing, at least two tests are required. For the first test, the wafer is placed on the support stage 100, with the support pad 104 providing support. The vacuum equipment is activated, and the negative pressure gas generated by the vacuum equipment enters the groove 101 through the gas channel, adsorbing the wafer onto the support stage 100. At this time, detection gas is sprayed onto the outer surface of the wafer. The leak rate testing mechanism determines whether the wafer is qualified by detecting the rate of detection gas flow through the gas channel. After the first test is completed, the wafer is rotated by a preset angle so that the part of the wafer that contacted the support pad 104 during the first test is misaligned with the support pad 104. The vacuum equipment is activated again, and the negative pressure gas generated by the vacuum equipment enters the groove 101 through the gas channel, adsorbing the wafer onto the support stage 100. Detection gas is then sprayed onto the outer surface of the wafer again. The leak rate testing mechanism determines whether the wafer portion not tested in the first test is qualified by detecting the rate of detection gas flow through the gas channel.

[0034] Compared with the prior art, the wafer leak detection support device disclosed in this embodiment of the present invention, through the setting of the support pad 104, can not only prevent the wafer from being damaged due to negative pressure, but also effectively increase the area of ​​the wafer to be detected and improve the accuracy of wafer leak rate detection.

[0035] This embodiment of the invention does not limit the specific type of gas to be detected; those skilled in the art can select one according to actual needs.

[0036] As a specific embodiment of this utility model, the detection gas disclosed in this utility model embodiment is helium.

[0037] The wafer disclosed in this embodiment of the present invention can be a silicon carbide wafer or other types of wafers. Any wafer that can be detected by the wafer leak detection carrier device disclosed in this embodiment of the present invention is within the protection scope of this invention.

[0038] It should be noted that the height of the support pad 104 disclosed in this embodiment of the present invention is greater than the depth of the groove 101. With this configuration, the support pad 104 can protrude to support the wafer.

[0039] As a further embodiment, the height of the support pad 104 disclosed in this embodiment of the present invention exceeds the depth of the groove 101 by 1mm-5mm. This arrangement allows the support pad 104 to provide more effective support for the wafer.

[0040] The depth of the groove 101 can be set according to actual needs. As a specific embodiment of this utility model, the depth of the groove 101 is preferably 3mm-5mm.

[0041] The present invention does not limit the specific structure of the support platform 100. The support platform 100 can be a square structure, a circular structure, or other shapes. As long as the shape meets the requirements of the present invention, it is within the protection scope of the present invention.

[0042] As a specific embodiment of the present invention, the support platform 100 disclosed in this embodiment of the present invention is a circular structure that conforms to the shape of the wafer.

[0043] The carrier stage 100 can support wafers with a diameter of 6 inches, or wafers with a diameter of 8 inches or other sizes. Different sizes of carrier stages 100 can be set to match the wafer size.

[0044] Of course, the groove 101 can be a straight groove or an annular groove, and it can be arranged irregularly or regularly on the end face of the bearing platform 100.

[0045] As a specific embodiment of this utility model, the groove 101 disclosed in this embodiment is an annular groove, and it is arranged sequentially and at intervals from the center to the edge of the upper end surface of the support platform 100. This arrangement can achieve all-round support for the wafer from the center to the edge, thereby further improving the support effect.

[0046] The distance between any two adjacent grooves 101 can be set according to the actual situation. Preferably, the distance between any two adjacent grooves 101 is 10mm-30mm.

[0047] For example, for an 8-inch wafer, the outer diameter of the stage 100 can be set to 200.2 mm.

[0048] Multiple annular grooves are sequentially arranged from the outer edge to the center of the support platform 100. For example, an annular groove can be arranged at 197mm, 180mm, 160mm, 140mm, 120mm, 100mm, 60mm, and 40mm respectively.

[0049] The gas channel disclosed in this embodiment of the present invention can be set as one or multiple channels, and those skilled in the art can set it according to actual needs.

[0050] As a further embodiment, the gas channel disclosed in this utility model embodiment includes a central channel 102 and a side channel 103. The central channel 102 is located at the center of the support platform 100 and extends through the support platform 100. The side channel 103 is located around the central channel 102, with one end connected to the central channel 102 and the other end connected to the upper surface of the support platform 100. With this configuration, when the vacuum equipment draws a vacuum, the negative pressure gas will adsorb the wafer onto the support platform 100 through the central channel 102 and the side channel 103, thereby further improving the adsorption effect.

[0051] As a further embodiment, the bypass channel 103 disclosed in this utility model embodiment is at least two.

[0052] As a further embodiment, the bypass channels 103 disclosed in this utility model embodiment are 4-6 in number and are evenly arranged between any two adjacent annular grooves along the circumference of the support platform 100. This arrangement can disperse the gas pressure in the central channel 102, enabling adsorption of the wafer from different parts of the wafer.

[0053] As a further embodiment, the groove 101 near the central channel 102 disclosed in this utility model embodiment is entirely filled with support pads 104. This arrangement can avoid the risk of wafer cracking caused by the strong negative pressure suction of the central channel 102.

[0054] As a further embodiment, at least two support pads 104 are placed in the other grooves 101 disclosed in this embodiment of the invention, and the two support pads 104 are spaced apart by a preset distance. With this arrangement, after the first test, the wafer can be rotated by a preset angle, so that the part that contacted the support pads 104 during the first test moves to the groove 101 where no support pads 104 are placed, thereby enabling the detection of wafer parts that were not detected in the first test. This effectively increases the area of ​​the wafer that is detected and improves the accuracy of leak rate detection.

[0055] As a specific embodiment, three support pads 104 can be provided in each of the other grooves 101, and the three support pads 104 are evenly distributed. With this arrangement, when the wafer rotates 60°, the parts of the wafer that contact the support pads 104 are exactly staggered during the second inspection and the first inspection.

[0056] Of course, four, five or more support pads 104 can also be set in each of the other grooves 101. The rotation angle of the wafer is determined according to the number of support pads 104 set. The specific number can be selected by those skilled in the art according to the actual situation.

[0057] This embodiment of the utility model does not limit the specific material of the support pad 104. Any structure that meets the usage requirements of this utility model is within the protection scope of this utility model.

[0058] As a preferred embodiment, the support pad 104 disclosed in this utility model embodiment is an elastic pad.

[0059] As a more preferred embodiment, the support pad 104 disclosed in this utility model embodiment is a rubber pad.

[0060] This embodiment of the utility model does not limit the specific structure of the support platform 100. Any structure that meets the usage requirements of this utility model is within the protection scope of this utility model.

[0061] As one embodiment, the support platform 100 disclosed in this utility model embodiment includes a support part and a support part, which are integrally formed. The support part has a disc-shaped structure, the support part has a cylindrical structure, and the diameter of the support part is smaller than the diameter of the support part.

[0062] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the term "comprising" or any other variation thereof is intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus.

[0063] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0064] The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A wafer leak rate testing support device, characterized in that, The device includes a support platform for supporting wafers. The upper surface of the support platform is provided with multiple grooves, some of which contain support pads for supporting the wafers. The support platform is also provided with a gas channel for negative pressure gas to pass through, and the gas channel is connected to a leak detection mechanism.

2. The wafer leak rate testing support device according to claim 1, characterized in that, The height of the support pad exceeds the depth of the groove by 1mm-5mm.

3. The wafer leak rate testing support device according to claim 1, characterized in that, The support platform is a circular structure that conforms to the shape of the wafer; The groove is an annular groove, and is arranged at intervals from the center to the edge of the support platform on the upper surface of the support platform.

4. The wafer leak rate testing support device according to claim 3, characterized in that, The distance between any two adjacent grooves is 10mm-30mm.

5. The wafer leak rate inspection carrier device according to claim 3, characterized in that, The gas channel includes: A central channel is located at the center of the support platform and extends through the support platform; A side passage is provided around the central passage, with one end connected to the central passage and the other end connected to the upper surface of the support platform.

6. The wafer leak rate testing support device according to claim 5, characterized in that, There are at least two bypass channels.

7. The wafer leak rate testing support device according to claim 6, characterized in that, There are 4-6 bypass channels, which are evenly arranged along the circumference of the support platform between any two adjacent annular grooves.

8. The wafer leak rate inspection carrier device according to claim 5, characterized in that, The support pads are placed entirely within the grooves near the central channel; At least two of the support pads are placed in the other grooves, and there is a predetermined distance between the two support pads.

9. The wafer leak rate testing support device according to claim 1, characterized in that, The support pad is an elastic pad.

10. The wafer leak rate inspection carrier device according to claim 1, characterized in that, The support platform includes a support portion and a support portion, which are integrally formed. The support portion has a disc-shaped structure, and the support portion has a cylindrical structure. The diameter of the support portion is smaller than the diameter of the support portion.

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