Process chamber of horizontal HWCVD (High Weight Chemical Vapor Deposition) equipment and process chamber

Abstract

The utility model belongs to the field of solar cell production and manufacturing, and particularly relates to a horizontal HWCVD equipment process chamber and a process chamber, the horizontal HWCVD equipment process chamber comprises a chamber body, the upper part of the chamber body is provided with a gas uniformizing chamber, the gas uniformizing chamber is internally provided with multiple layers of covering type gas uniformizing chambers, and the gas uniformizing chambers are provided with gas inlet channels; process gas introduced from the gas inlet channel enters the gas uniformizing cavity through the gas uniformizing chamber, the spraying module sprays the process gas uniformly mixed by the gas uniformizing chamber, and the hot wire module comprises a plurality of hot wire groups uniformly arranged among spraying pipes at intervals. According to the utility model, the multi-layer covering type gas uniformizing chamber is arranged, process gas is uniformly mixed in the gas uniformizing chamber, and the hot filament groups are uniformly arranged among the spraying pipes at intervals, so that the process gas sprayed by the spraying pipes is fully heated and decomposed, the uniformity of coating is improved, and the effect of high product stability of high-productivity HWCVD equipment is realized.

Description

Technical Field

[0001] This utility model belongs to the field of solar cell manufacturing, and in particular relates to a process chamber for a horizontal HWCVD equipment. Background Technology

[0002] Hot-wire chemical vapor deposition (HWCVD) utilizes gas molecules (SiH4, H2, PH3, CH4, CO2, etc.) to undergo catalytic reactions on a heated metal wire, resulting in the deposition and polymerization of thin films on the substrate surface. It boasts high utilization of process gases and high growth rates, offering significant advantages in terms of manufacturing costs and the stability of compound semiconductors. Horizontal hot-wire chemical vapor deposition (HWCVD) equipment involves applying a high voltage to a heated wire, generating high temperatures. Under relatively low pressure, the thermal energy activates the process gases, causing them to undergo thermal decomposition or chemical reactions, depositing the desired thin film on the substrate surface.

[0003] Before the process gas passes through the hot filament, multiple gases need to be thoroughly mixed. As the demand for equipment capacity continues to increase, the chamber area of ​​existing horizontal hot filament chemical vapor deposition (HWCVD) equipment is becoming larger and larger. The internal uniformity of the mixed gas and the incomplete decomposition or chemical reaction of the process gas result in poor coating uniformity, which affects the product stability of high-capacity HWCVD equipment.

[0004] Therefore, there is an urgent need to design a horizontal HWCVD equipment process chamber to solve the technical problems of uneven mixing of gas and insufficient decomposition or chemical reaction of process gas, which lead to poor product stability of high-capacity HWCVD equipment.

[0005] It should be noted that the information disclosed in this background section is only for understanding the background technology of this application concept, and therefore may include information that does not constitute prior art. Utility Model Content

[0006] This disclosure provides at least one process chamber for a horizontal HWCVD equipment.

[0007] In a first aspect, the present disclosure provides a process chamber for a horizontal HWCVD equipment, comprising: a chamber, wherein a gas equalization chamber is provided on the upper part of the chamber, and a heating plate connected to the top of the chamber is provided on the upper part of the gas equalization chamber.

[0008] The gas equalization chamber is provided with a multi-layer covered gas equalization chamber. The gas equalization chamber has a heating plate as its top plate and an air inlet channel. The process gas introduced through the air inlet channel enters the gas equalization chamber through the gas equalization chamber.

[0009] a spraying module arranged below the uniform gas chamber and having a plurality of downwardly protruding spraying pipes for spraying the process gas uniformly mixed by the uniform gas chamber; and

[0010] a hot wire module including a plurality of hot wire groups uniformly spaced between the spraying pipes for heating the process gas sprayed by the spraying pipes to decomposition.

[0011] In an alternative embodiment, the uniform gas chamber includes a first gas chamber, a second gas chamber and a third gas chamber with gradually increasing areas from top to bottom;

[0012] The first gas chamber is arranged in the second gas chamber, and the second gas chamber is arranged in the third gas chamber;

[0013] The heating plate is a common top plate for the first gas chamber, the second gas chamber and the third gas chamber.

[0014] In an alternative embodiment, the gas inlet channel communicates with the first gas chamber through the heating plate;

[0015] The bottom plate of the first gas chamber, the second gas chamber and the third gas chamber is provided with a plurality of uniformly distributed uniform gas holes to allow the process gas to flow through the first gas chamber, the second gas chamber and the third gas chamber layer by layer and then enter the uniform gas cavity.

[0016] In an alternative embodiment, the spraying module includes a gas inlet plate for separating the cavity;

[0017] The uniform gas cavity is located above the gas inlet plate, and the process cavity is below the gas inlet plate.

[0018] In an alternative embodiment, the gas inlet plate is provided with a plurality of columns of equally spaced air passages;

[0019] The spraying pipes are located below the air passages, and each spraying pipe corresponds to a column of air passages.

[0020] In an alternative embodiment, the air passages are provided with a plurality of equally spaced circular through holes;

[0021] The spraying pipes are closed at both ends, and the side walls are also provided with a plurality of spraying holes;

[0022] The circular through holes communicate with the spraying pipes to allow the process gas in the uniform gas cavity to flow through the circular through holes and the spraying holes and then enter the process cavity.

[0023] In an alternative embodiment, the hot wire group includes hot wires extending downwardly and connected to each other;

[0024] The spraying holes are located in the middle of the hot wires to sufficiently heat and decompose the process gas sprayed from the spraying holes.

[0025] In an alternative embodiment, the cavity comprises a cover plate arranged on the top of the cavity, the heating plate is connected to the cover plate, and the gas inlet channel passes through the cover plate; and

[0026] The process cavity is provided with a carrier plate adapted to carry the silicon wafer.

[0027] The sidewall of the process cavity is provided with a feeding port and a discharging port adapted to the feeding and discharging of the carrier plate.

[0028] In the second aspect, the embodiments of the present disclosure further provide a process chamber, comprising: a cavity, wherein a spraying module is arranged in the cavity, and the spraying module is configured to spray process gas;

[0029] The cavity comprises a process cavity arranged below the spraying module, the process cavity is provided with a carrier plate, the carrier plate faces the spraying module, and a hot wire module is arranged between the carrier plate and the spraying module; and

[0030] The hot wire module comprises a plurality of hot wire groups arranged uniformly and at intervals, the hot wire groups heat the process gas sprayed by the spraying module to complete decomposition, so that the surface of the silicon wafer carried by the carrier plate is uniformly coated.

[0031] In an alternative embodiment, the cavity further comprises a uniform gas cavity arranged above the spraying module, the upper part of the uniform gas cavity is provided with a heating plate connected to the top of the cavity.

[0032] The uniform gas cavity is provided with a plurality of multilayer covering uniform gas chambers, the uniform gas chamber takes the heating plate as a top plate, and the uniform gas chamber is provided with a gas inlet channel, the process gas introduced by the gas inlet channel enters the uniform gas cavity through the uniform gas chamber; and

[0033] The spraying module is arranged below the uniform gas chamber and is configured to spray the process gas uniformly mixed by the uniform gas chamber.

[0034] The beneficial effects of the present application are that the multilayer covering uniform gas chamber is arranged to uniformly mix the process gas in the uniform gas chamber, and the hot wire groups are uniformly and at intervals arranged between the spraying pipes, so as to sufficiently heat and decompose the process gas sprayed by the spraying pipes, thereby improving the uniformity of the coating and realizing the effect of good stability of the high-capacity HWCVD equipment product.

[0035] Other features and advantages of the present application will be set forth in the following description of the application, and in part will become apparent to those skilled in the art from the description, or can be learned by practice of the application. The objects and other advantages of the present application will be realized and achieved by the structure particularly pointed out in the description, claims and drawings.

[0036] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the following preferred embodiments are described in detail below, and the accompanying drawings are described as follows. Attached Figure Description

[0037] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0038] Figure 1 A cross-sectional view of the process chamber of a horizontal HWCVD equipment provided in an embodiment of this disclosure;

[0039] Figure 2 A top view of a gas equalization chamber floor plate provided in an embodiment of this disclosure;

[0040] Figure 3 A perspective view of a spray module provided in an embodiment of this disclosure;

[0041] Figure 4 This is a perspective view of a spray pipe provided in an embodiment of the present disclosure.

[0042] In the picture:

[0043] 1. Cavity;

[0044] 2. Gas equalization chamber; 21. Heating plate;

[0045] 3. Gas equalization chamber; 31. Air inlet channel; 32. First air chamber; 33. Second air chamber; 34. Third air chamber; 35. Gas equalization hole;

[0046] 4. Spray module; 41. Spray pipe; 42. Air inlet plate; 43. Ventilation section; 44. Through hole; 45. Spray hole;

[0047] 5. Hot wire module; 51. Hot wire assembly; 52. Hot wire;

[0048] 6. Process chamber; 61. Feed inlet; 62. Discharge outlet;

[0049] 7. Cover plate;

[0050] 8. Carrier board; 81. Silicon wafer. Detailed Implementation

[0051] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme of the utility model will be described clearly and completely in combination with the drawings below. Obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor belong to the protection scope of the utility model.

[0052] It is found through research that in the related art, hot wire chemical vapor deposition (HWCVD) utilizes gas molecules (SiH4, H2, PH3, CH4, CO2, etc.) to occur catalytic reaction on a heated metal wire, and deposition and polymerization occur on the surface of a substrate to form a thin film, the utilization rate of process gas and the growth rate are high, and strong advantages exist in the aspects of preparation cost and compound semiconductor stability. A horizontal hot wire chemical vapor deposition (HWCVD) equipment is provided with a high voltage to the heated hot wire, so that the heated hot wire generates high temperature, under lower pressure, the process gas is activated by heat energy, so that thermal decomposition or chemical reaction occurs, and the required thin film is formed on the surface of the substrate.

[0053] Before the process gas passes through the hot wire, a plurality of gases need to be fully mixed. With the increasing demand for equipment capacity, the existing horizontal hot wire chemical vapor deposition (HWCVD) equipment chamber area is getting larger and larger, the mixed gas inside is not uniform, and when the process gas is not fully decomposed or chemically reacted, the uniformity of the film is poor, which affects the product stability of the large-capacity HWCVD equipment.

[0054] Therefore, it is urgent to design a horizontal HWCVD equipment process chamber to solve the above-mentioned technical problems of internal non-uniformity of mixed gas and insufficient decomposition or chemical reaction of process gas, which leads to poor product stability of large-capacity HWCVD equipment.

[0055] Some embodiments of the utility model will be described in detail below in combination with the drawings. In the case of no conflict, the following embodiments and features in the embodiments can be combined with each other.

[0056] It should be noted that: similar signs and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings. In addition, in the drawings, in order to effectively describe the technical content, the thickness of the components can be exaggerated or reduced.

[0057] Based on the above research, in order to solve the above technical problems, with reference to Figure 1At least one embodiment provides a horizontal HWCVD equipment process chamber, comprising: a cavity 1, a spray module 4 is arranged inside the cavity 1, the spray module 4 divides the cavity 1 into a uniform gas cavity 2 and a process cavity 6, the uniform gas cavity 2 is located at the upper part of the cavity 1, and the process cavity 6 is located at the lower part of the cavity 1. A plurality of multilayer covering uniform gas chambers 3 are arranged in the uniform gas cavity 2, and the upper part of the uniform gas cavity 2 is provided with a heating plate 21 connected with the top of the cavity 1, the heating plate 21 is the top plate of the uniform gas chamber 3, the uniform gas chamber 3 is provided with an air inlet channel 31, the air inlet channel 31 is suitable for introducing process gas into the uniform gas chamber 3, the heating plate 21 preheats the process gas entering the uniform gas chamber 3, and the process gas is mixed uniformly in the uniform gas chamber 3 and then enters the uniform gas cavity 2. The spray module 4 is arranged below the uniform gas chamber 3, and has a plurality of downwardly protruding spray pipes 41, the spray pipes 41 are suitable for spraying the process gas mixed uniformly in the uniform gas chamber 3 and then entering the uniform gas cavity 2. The process cavity 6 is provided with a hot wire module 5, the hot wire module 5 is arranged below the spray module 4, and comprises a plurality of hot wire groups 51 uniformly and spacedly arranged between the spray pipes 41, the hot wire groups 51 sufficiently heat the process gas sprayed by the spray pipes 41 to complete decomposition. The process cavity 6 is also provided with a carrier plate 8, the carrier plate 8 is located below the hot wire module 5, and the carrier plate 8 is suitable for carrying a silicon wafer 81, so that the process gas sufficiently heated and decomposed is deposited on the surface of the silicon wafer 81 to form a coating film. In order to facilitate the carrier plate 8 to enter and exit the process cavity 6, the sidewall of the process cavity 6 is provided with an inlet 61 and an outlet 62, the carrier plate 8 carries the silicon wafer 81 without coating film to enter the process cavity 6 from the inlet 61 to coat, and after coating is completed, the carrier plate 8 carries the silicon wafer 81 to exit the process cavity 6 from the outlet 62. By arranging the multilayer covering uniform gas chamber 3, the process gas is uniformly mixed in the uniform gas chamber 3, and by uniformly and spacedly arranging the hot wire groups 51 between the spray pipes 41, the process gas sprayed by the spray pipes 41 is sufficiently heated and decomposed, so that the uniformity of the coating film deposited by the process gas sufficiently heated and decomposed is better, and the effect of realizing the stability of the large-capacity HWCVD equipment product is achieved.

[0058] Reference Figure 1 and Figure 2, the structure of the multi-layered cover-type gas uniform chamber 3 will be explained in detail below. In some embodiments, the cavity 1 comprises a cover plate 7 arranged on the top of the cavity 1, and the heating plate 21 is connected to the cover plate 7. The gas uniform chamber 3 comprises a first gas chamber 32, a second gas chamber 33 and a third gas chamber 34 arranged below the heating plate 21 in order of increasing area from top to bottom, wherein the first gas chamber 32 is arranged in the second gas chamber 33, the second gas chamber 33 is arranged in the third gas chamber 34, and the heating plate 21 is a common top plate for the first gas chamber 32, the second gas chamber 33 and the third gas chamber 34. That is, only one heating plate 21 is arranged to form several gas chambers, and the process gas in all the gas chambers can be preheated by the heating plate 21, thereby facilitating the mixing and uniformity of the process gas. The bottom plate of the first gas chamber 32, the second gas chamber 33 and the third gas chamber 34 is provided with a plurality of uniformly distributed gas uniform holes 35 to realize the layer-by-layer flow of the process gas in the gas chambers and finally into the gas uniform cavity 2. The gas inlet channel 31 of the gas uniform chamber 3 penetrates through the cover plate 7 and the heating plate 21 to communicate with the first gas chamber 32, and the gas inlet channel 31 is connected to an external gas source. The flow of the process gas will be explained in detail below. The process gas from the external gas source enters the gas inlet channel 31, then enters the first gas chamber 32. The first gas chamber 32 is relatively narrow, and the process gas is initially mixed in the first gas chamber 32. The preheating of the heating plate 21 can facilitate the mixing and uniformity of the process gas. The gas then enters the second gas chamber 33 from the gas uniform holes 35, and after repeating the above process, it enters the third gas chamber 34 for internal mixing, and finally enters the gas uniform cavity 2. It is worth mentioning that the distribution of the gas uniform holes 35 is various, and the uniform array distribution is preferred. Since the gas uniform holes 35 are very small, the flow of the process gas through the gas uniform holes 35 also promotes the mixing of the process gas.

[0059] Referring to Figure 1 , Figure 3 and Figure 4 , the structure of the spraying module 4 will be explained in detail below. In some embodiments, the spraying module 4 comprises a gas inlet plate 42, which separates the cavity 1, i.e. the gas uniform cavity 2 is located above the gas inlet plate 42, and the process cavity 6 is located below the gas inlet plate 42. The gas inlet plate 42 is provided with a plurality of columns of air passage parts 43 arranged at equal intervals, and the air passage parts 43 are provided with a plurality of circular through holes 44 arranged at equal intervals. The spraying pipes 41 are located below the air passage parts 43, and each spraying pipe 41 corresponds to a column of air passage parts 43. The spraying pipes 41 are closed at both ends, and the side walls thereof are provided with a plurality of spraying holes 45. The circular through holes 44 communicate with the spraying pipes 41, and the process gas in the gas uniform cavity 2 enters the spraying pipes 41 from the circular through holes 44, and then is sprayed into the process cavity 6 from the spraying holes 45 in the side walls of the spraying pipes 41. It is worth mentioning that the spraying module 4 is preferably formed integrally, which is convenient to disassemble and assemble.

[0060] Referring to Figure 1The structure of the hot-wire module 5 will be described in detail below. In some embodiments, the hot-wire group 51 of the hot-wire module 5 includes hot wires 52 extending downward and connected to each other, and the spray pipe 41 is located in the middle of the hot wires 52, i.e., the spray holes 45 are located in the middle of the hot wires 52. After the process gas is sprayed by the spray holes 45, the process gas is uniformly distributed around the hot wires 52, and the hot wires 52 can fully heat and decompose the process gas. It should be noted that the hot-wire module 5 and the heating plate 21 described above are both powered by an external power supply. The power supply line is arranged in the cover plate 7 and connected to the hot-wire module 5 and the heating plate 21 in the cavity 1 to achieve the preheating effect of the heating plate 21 and the heating and decomposition effect of the hot-wire module 5.

[0061] In addition, with reference to Figure 1 At least one embodiment provides a process chamber, which includes a cavity 1, a spray module 4 arranged in the cavity 1, the spray module 4 divides the cavity 1 into a uniform gas chamber 2 and a process chamber 6, the uniform gas chamber 2 is located at the upper part of the cavity 1, and the process chamber 6 is located at the lower part of the cavity 1. A plurality of multilayer covering uniform gas chambers 3 are arranged in the uniform gas chamber 2, and a heating plate 21 connected to the top of the cavity 1 is arranged at the upper part of the uniform gas chamber 2, the heating plate 21 is the top plate of the uniform gas chamber 3, the uniform gas chamber 3 is provided with an air inlet channel 31 adapted to introduce process gas into the uniform gas chamber 3, the heating plate 21 preheats the process gas entering the uniform gas chamber 3, and the process gas is mixed uniformly in the uniform gas chamber 3 and then enters the uniform gas chamber 2. The spray module 4 is arranged below the uniform gas chamber 3 and is adapted to spray the process gas mixed uniformly in the uniform gas chamber 3 and then entering the uniform gas chamber 2. The process chamber 6 is provided with a hot-wire module 5 arranged below the spray module 4, which includes a plurality of hot-wire groups 51 arranged uniformly and at intervals, and the hot-wire groups 51 fully heat and decompose the process gas sprayed by the spray module 4. The process chamber 6 is also provided with a carrier plate 8 arranged below the hot-wire module 5, and the carrier plate 8 is adapted to carry a silicon wafer 81 so that the process gas fully heated and decomposed is deposited on the surface of the silicon wafer 81 to form a coating film. By arranging the multilayer covering uniform gas chamber 3, the process gas is uniformly mixed in the uniform gas chamber 3, and by arranging the hot-wire groups 51 uniformly and at intervals below the spray module 4, the process gas sprayed by the spray module 4 is fully heated and decomposed, so that the uniformity of the coating film deposited by the process gas fully heated and decomposed is better, and the effect of stable product stability of large-capacity HWCVD equipment is achieved.

[0062] As used herein, the phrases “at least one of,” “one or more of,” “or,” and “and / or” as used herein include any and all combinations of one or more of the associated listed items. As used herein, the term “or” is meant to be inclusive and not exclusive, unless otherwise indicated or dictated by context. As used herein, the term “and” is meant to be inclusive and not exclusive, unless otherwise indicated or dictated by context. As used herein, the term “includes” means includes but is not limited to, the term “including” means including but not limited to. The term “based on” means based at least on.

[0063] In the description of the embodiments of the present application, unless specifically defined and limited, the terms “mounting”, “connection”, “connecting” should be understood in a broad sense, for example, can be fixedly connected, can be detachably connected, or integrally connected; can be mechanically connected, can be electrically connected; can be directly connected, can be indirectly connected through an intermediate medium, and can be internal communication of two elements. For those skilled in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0064] In the description of the present application, it should be explained that the terms “center”, “upper”, “lower”, “left”, “right”, “vertical”, “horizontal”, “inner”, “outer” and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, terms such as “first”, “second” and other numerical terms are used herein, unless otherwise indicated herein. Therefore, the first element, component, region, layer or section discussed above can be referred to as the second element, component, region, layer or section without departing from the teachings of the example embodiments.

[0065] Based on the above ideal embodiments according to the present application, through the above description, relevant personnel can make various changes and modifications without deviating from the technical idea of the present application. The technical scope of the present application is not limited to the contents in the specification, and must be determined according to the scope of the claims.

Claims

1. A horizontal HWCVD apparatus process chamber, characterized in that, The utility model relates to a horizontal HWCVD equipment process chamber, comprising: a cavity (1) which is provided with a uniform gas cavity (2) in the upper part, and the upper part of the uniform gas cavity (2) is provided with a heating plate (21) connected with the top of the cavity (1); wherein, the uniform gas cavity (2) is provided with a plurality of multilayer covering uniform gas chambers (3), the heating plate (21) is the top plate of the uniform gas chamber (3), and the uniform gas chamber (3) is provided with an air inlet channel (31), the process gas entering through the air inlet channel (31) enters the uniform gas cavity (2) through the uniform gas chamber (3); a spraying module (4) which is arranged below the uniform gas chamber (3) and has a plurality of downward protruding spraying pipes (41), the spraying pipes (41) spray the process gas uniformly mixed by the uniform gas chamber (3); and a hot wire module (5) which comprises a plurality of hot wire groups (51) uniformly arranged between the spraying pipes (41) to heat the process gas sprayed by the spraying pipes (41) to decomposition.

2. The horizontal HWCVD equipment process chamber according to claim 1, wherein: the uniform gas chamber (3) comprises a first gas chamber (32), a second gas chamber (33) and a third gas chamber (34) with gradually increasing areas from top to bottom; the first gas chamber (32) is arranged in the second gas chamber (33), and the second gas chamber (33) is arranged in the third gas chamber (34); the heating plate (21) is a common top plate of the first gas chamber (32), the second gas chamber (33) and the third gas chamber (34).

3. The horizontal HWCVD equipment process chamber according to claim 2, wherein: the air inlet channel (31) penetrates through the heating plate (21) to communicate with the first gas chamber (32); a plurality of uniformly distributed uniform gas holes (35) are formed in the bottom plates of the first gas chamber (32), the second gas chamber (33) and the third gas chamber (34) to make the process gas flow through the first gas chamber (32), the second gas chamber (33) and the third gas chamber (34) layer by layer and then enter the uniform gas cavity (2).

4. The horizontal HWCVD equipment process chamber according to claim 1, wherein: the spraying module (4) comprises an air inlet plate (42) for separating the cavity (1); the uniform gas cavity (2) is located above the air inlet plate (42), and a process cavity (6) is located below the air inlet plate (42).

5. The horizontal HWCVD equipment process chamber according to claim 4, wherein: the air inlet plate (42) is provided with a plurality of columns of equidistant air passage parts (43); the spraying pipes (41) are located below the air passage parts (43), and each spraying pipe (41) corresponds to a column of air passage parts (43).

6. The horizontal HWCVD equipment process chamber according to claim 5, wherein: the air passage parts (43) are provided with a plurality of equidistant circular through holes (44); the spraying pipes (41) are closed at both ends, and the side walls are also provided with a plurality of spraying holes (45); the circular through holes (44) communicate with the spraying pipes (41) to make the process gas in the uniform gas cavity (2) flow through the circular through holes (44) and the spraying holes (45) and then enter the process cavity (6).

7. The horizontal HWCVD equipment process chamber according to claim 6, wherein: The hot wire group (51) comprises hot wires (52) extending downward and connected to each other; The spray hole (45) is in the middle of the hot wire (52) to sufficiently heat and decompose the process gas sprayed from the spray hole (45).

8. The horizontal HWCVD apparatus process chamber of claim 1, wherein, The cavity (1) comprises a cover plate (7) arranged at the top of the cavity (1), the heating plate (21) is connected to the cover plate (7), and the gas inlet channel (31) penetrates through the cover plate (7); and The process cavity (6) is provided with a carrier plate (8) adapted to carry a silicon wafer (81). The sidewall of the process cavity (6) is provided with an inlet port (61) and an outlet port (62) for feeding and discharging the carrier plate (8).

9. A process chamber, comprising: It comprises: A cavity (1) provided with a spraying module (4) configured to spray process gas; The cavity (1) comprises a process cavity (6) arranged below the spraying module (4), the process cavity (6) is provided with a carrier plate (8) facing the spraying module (4), and the carrier plate (8) and the spraying module (4) are provided with a hot wire module (5); and The hot wire module (5) comprises a plurality of hot wire groups (51) arranged uniformly and spaced apart, the hot wire groups (51) heat the process gas sprayed by the spraying module (4) to complete decomposition, so that the surface of the silicon wafer (81) carried by the carrier plate (8) is uniformly coated.

10. The process chamber of claim 9, wherein, The cavity (1) further comprises a uniform gas cavity (2) arranged above the spraying module (4), the upper part of the uniform gas cavity (2) is provided with a heating plate (21) connected to the top of the cavity (1); The uniform gas cavity (2) is provided with a plurality of multilayer covering uniform gas chambers (3), the uniform gas chamber (3) takes the heating plate (21) as the top plate, and the uniform gas chamber (3) is provided with a gas inlet channel (31), the process gas introduced through the gas inlet channel (31) enters the uniform gas cavity (2) through the uniform gas chamber (3); and The spraying module (4) is arranged below the uniform gas chamber (3) and is configured to spray the process gas uniformly mixed by the uniform gas chamber (3).

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