Integrated SOIC integrated transformer

Abstract

The utility model discloses an SOIC integrated transformer which comprises an outer shell, a transformer body and an SOIC, and a containing cavity is formed in the outer shell. The transformer is accommodated in the accommodating cavity; the SOIC is accommodated in the accommodating cavity, and the SOIC is stacked on one side surface, far away from the bottom surface of the accommodating cavity, of the transformer; the coil connecting end of the transformer is bound to the pin of the SOIC, and the transformer and the SOIC are of an integrated structure. Therefore, the requirements of small size and less wiring can be met; specifically, a coil connecting end of the transformer is directly bound on a pin of the SOIC, and the transformer is electrically connected with other components through the pin of the SOIC, so that connection and conduction of the transformer and the SOIC are realized, and integrated miniaturization design of the transformer and the SOIC is realized. The occupied space is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to transformer technical field especially relates to a kind of integrated SOIC integrated transformer. BACKGROUND

[0002] With the rapid development of modern electronic technology, the miniaturization and integration of electronic equipment has become a general trend. For example, SOIC (integrated circuit) and transformer are key components in electronic systems, so the size of the space occupied by SOIC and transformer will greatly affect the miniaturization of electronic equipment.

[0003] In view of the above, an integrated SOIC integrated transformer is proposed to reduce the occupied space of SOIC and transformer and achieve the miniaturization design of electronic equipment. SUMMARY

[0004] The utility model aims at overcoming the deficiencies in the prior art and providing an integrated SOIC integrated transformer to reduce the occupied space of SOIC and transformer and achieve the miniaturization design.

[0005] The utility model aims to achieve the following technical solutions:

[0006] An integrated SOIC integrated transformer includes an outer shell, a transformer and a SOIC. The outer shell has a receiving cavity. The transformer is received in the receiving cavity. The SOIC is received in the receiving cavity and stacked on the side of the transformer away from the bottom surface of the receiving cavity. The coil connection end of the transformer is bound to the pin of the SOIC, and the transformer and the SOIC are integrated into a structure.

[0007] In one embodiment, the transformer and the SOIC are wrapped with a potting glue layer to form an integrated structure.

[0008] In one embodiment, the potting glue layer is a heat-conducting potting glue layer.

[0009] In one embodiment, the receiving cavity includes a transformer limiting cavity and a SOIC limiting cavity. The transformer limiting cavity and the SOIC limiting cavity are in communication. The transformer limiting cavity is located near the bottom of the outer shell, and the SOIC limiting cavity is located near the opening side of the outer shell.

[0010] In one embodiment, the space size of the transformer limiting cavity is smaller than that of the SOIC limiting cavity.

[0011] In one of the embodiments, the transformer limiting cavity has a space size smaller than that of the SOIC limiting cavity, so that a limiting platform is formed on the SOIC limiting cavity, and an adhesive layer is arranged on the limiting platform, and the adhesive layer is used for bonding and fixing the SOIC on the limiting platform.

[0012] In one of the embodiments, the adhesive layer is an epoxy adhesive layer.

[0013] In one of the embodiments, the outer shell is an insulating outer shell.

[0014] Compared with the prior art, the utility model has at least the following advantages:

[0015] 1、The integrated SOIC integrated transformer of the utility model is integrated with the transformer and the SOIC, and the transformer and the SOIC are in a stacked structure, so that the requirements of small size and less wiring are met, and the transformer and the SOIC are limited and protected by the outer shell, the coil connecting end of the transformer is directly bound to the pin of the SOIC, the pin of the SOIC is electrically connected to other components, the connection between the transformer and the SOIC is realized, the integrated and miniaturized design of the transformer and the SOIC is realized, and the occupied space is reduced.

[0016] 2、The integrated SOIC integrated transformer of the utility model is assembled by the potting glue process, the SOIC and the transformer are glued, the stability of the SOIC and the transformer in the containing cavity can be ensured, the problems such as shaking or displacement of the SOIC and the transformer can be avoided, the heat dissipation effect can be improved by using the heat-conducting potting glue layer, and the temperature rise requirement is met. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical scheme of the embodiments of the utility model, the drawings needed in the embodiments will be briefly introduced below.

[0018] Figure 1 It is a structural schematic view of the integrated SOIC integrated transformer in an embodiment of the utility model;

[0019] Figure 2 It is a structural schematic view of the integrated SOIC integrated transformer in an embodiment of the utility model; Figure 1

[0020] Figure 3 It is a structural schematic view of the integrated SOIC integrated transformer in an embodiment of the utility model; Figure 1 DETAILED DESCRIPTION

[0021] In order to facilitate understanding of the utility model, the utility model will be more fully described below with reference to the related drawings.​​

[0022] Please refer to Figure 1 , Figure 2 and Figure 3 , an integrated SOIC transformer 10 includes: an outer shell 100, a transformer 200 and an SOIC 300, the outer shell is provided with a containing cavity; the transformer 200 is contained in the containing cavity; the SOIC 300 is contained in the containing cavity, and the SOIC 300 is stacked on the side of the transformer 200 away from the bottom surface of the containing cavity; the coil connection end of the transformer 200 is bound to the pin 310 of the SOIC 300, and the transformer 200 and the SOIC 300 are an integrated structure.

[0023] It should be noted that, wherein, the main role of SOIC 300 (integrated circuit) is to miniaturize electronic components, reduce power consumption, improve reliability and intelligence, that is, SOIC 300 is a kind of transistor, resistor, capacitor and inductor and other components and wiring interconnection in a circuit are connected together, made on a small piece or several small pieces of semiconductor wafer or dielectric substrate, and then packaged in a tube shell, become a microstructure with required multiple circuit functions, which can greatly realize the miniaturization design of electronic equipment. The main components of the traditional transformer are coil, core and shell, and the shell of the traditional transformer 200 is provided with corresponding pins, which are bound and connected with the coil, so as to realize the connection with other components. In the present application, the transformer 200 and the SOIC 300 are designed into an integrated structure, that is, the transformer 200 is stacked on the top surface of the SOIC 300, and the pins 310 on the outer shell 100 are cancelled, and the coil connection end is directly bound to the pins 310 of the SOIC 300. When bound and connected with the corresponding circuit board of electronic equipment, the pins 310 of the SOIC 300 are directly bound to the circuit board of electronic equipment. In this way, by using the integration of SOIC 300 and transformer 200, not only the requirement of small size and less wiring can be met, but also the shell with pins commonly used in transformer 200 can be cancelled, and the occupied area of one transformer 200 on the circuit board of electronic equipment can be reduced, so as to not only save cost, but also make the overall structure more compact and small, and further meet the miniaturization design of electronic equipment. In the embodiment, the outer shell 100 is an insulating outer shell 100, such as a plastic outer shell 100, so as to play an insulating protection role. It should be noted that the transformer 200 is located on the side of the SOIC 300 away from the pin 310, and the SOIC 300 is wrapped with an insulating shell, so that the distance between the pin 310 of the SOIC 300 and the magnetic core of the transformer 200 can be increased, and the safety distance between the pin 310 and the magnetic core can be increased, and the safety can be improved.

[0024] In one of the embodiments, the transformer 200 is wrapped with the potting glue layer outside the SOIC 300, so that the transformer 200 and the SOIC 300 form an integrated structure. Through the potting glue process, the assembled SOIC 300 and the transformer 200 are subjected to the potting operation, which can ensure the stability of the SOIC 300 and the transformer 200 in the accommodating cavity, and avoid the problems such as shaking or displacement of the SOIC 300 and the transformer 200. In this embodiment, the potting glue layer is a heat-conducting potting glue layer, which can also improve the heat dissipation effect, meet the temperature rise requirement, and thus improve the quality of the product. For example, when assembling the integrated SOIC 300 transformer 200, the coil connection end on the transformer 200 can be hung on the pin 310 of the SOIC 300, and then the assembled SOIC 300 and transformer 200 are placed in the accommodating cavity, and then the potting glue operation is performed, so that the potting glue layer wraps the outer surface of the transformer 200 and the SOIC 300. This not only improves the heat dissipation effect, but also ensures the stability of the transformer 200 and the SOIC 300 in the accommodating cavity, and avoids the damage to the transformer 200 or the SOIC 300 caused by the problems such as shaking or displacement of the transformer 200 or the SOIC 300 in the transportation and other scenarios. In another embodiment, the SOIC 300 and the transformer 200 can be first subjected to the potting glue process and then assembled into the accommodating cavity of the outer shell 100.

[0025] In one embodiment, the accommodating cavity includes a transformer limiting cavity and a SOIC limiting cavity. The transformer limiting cavity and the SOIC limiting cavity are in communication. The transformer limiting cavity is located near the bottom of the outer shell 100, and the SOIC limiting cavity is located near the opening side of the outer shell 100. The transformer limiting cavity is used to place the transformer 200 and limit the transformer 200, and the SOIC limiting cavity is used to place the SOIC 300 and limit the SOIC 300.

[0026] Further, the space size of the transformer limiting cavity is smaller than the space size of the SOIC limiting cavity. In this way, the SOIC 300 can block the opening of the outer shell 100, and the space of the transformer limiting cavity can also be reduced.

[0027] In an embodiment, the space size of the transformer limiting cavity is smaller than the space size of the SOIC limiting cavity, so that the limiting table 110 is formed on the SOIC limiting cavity, and the adhesive layer 400 is arranged on the limiting table 110, and the adhesive layer 400 is used for bonding and fixing the SOIC 300 on the limiting table 110. By limiting the SOIC 300 through the limiting table 110, the SOIC 300 can be prevented from being damaged due to extrusion with the transformer 200, and meanwhile, through the adhesive layer 400, the installation firmness of the SOIC 300 can be ensured, and the shaking of the SOIC 300 can be avoided. Preferably, the adhesive layer 400 is an epoxy adhesive layer, which has high adhesive force and stable chemical properties, is resistant to high and low temperatures, and thus can greatly ensure the bonding firmness, and further can improve the service life of the integrated SOIC transformer.

[0028] The above embodiments only express several embodiments of the utility model, and the description is more specific and detailed, but it cannot be understood as the limitation of the utility model patent range. It should be pointed out that for ordinary skilled persons in the art, without departing from the concept of the utility model, a number of modifications and improvements can be made, which belong to the protection range of the utility model. Therefore, the protection range of the utility model patent should be subject to the appended claims.

Claims

1. An integrated SOIC transformer, characterized by The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure.

2. The integrated SOIC transformer of claim 1, wherein, The application relates to a transformer and SOIC integrated structure.

3. The integrated SOIC transformer of claim 2, wherein, The application relates to a transformer and SOIC integrated structure.

4. The integrated SOIC transformer of claim 1, wherein, The application relates to a transformer and SOIC integrated structure.

5. The integrated SOIC transformer of claim 4, wherein, The application relates to a transformer and SOIC integrated structure.

6. The integrated SOIC transformer of claim 5, wherein, The application relates to a transformer and SOIC integrated structure.

7. The integrated SOIC transformer of claim 6, wherein, The application relates to a transformer and SOIC integrated structure.

8. The integrated SOIC transformer of any of claims 1-7, wherein, The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated structure. The application relates to a transformer and SOIC integrated

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