Planar electrostatic restraint device

Abstract

The utility model relates to the technical field of semiconductor material processing equipment, and particularly discloses a planar electrostatic restraint device. The device comprises an emission source, and a grounding shielding plate, an electrostatic restraint plate and a charge receiving plate which are sequentially arranged in parallel at intervals along the emission direction, the charge receiving plate has a charge receiving plane, and the emission direction is perpendicular to the charge receiving plane; a plurality of first through holes penetrate through the grounding shielding plate; a plurality of second through holes penetrate through the electrostatic restraint plate, and bias voltage is applied to the electrostatic restraint plate; the emission source is used for emitting a to-be-measured beam along an emission direction, so that the to-be-measured beam passes through the first through hole and the second through hole in sequence and then impacts the charge receiving plane; and an electrostatic field formed by the bias voltage returns secondary electrons generated by impact on the charge receiving plane to the charge receiving plane. According to the device, the electrostatic field formed by the bias voltage is used for constraint, so that the influence of secondary electron escape on the measurement result is reduced, and the deviation of the measurement result of the beam to be measured is inhibited.

Description

TECHNICAL FIELD

[0001] The utility model relates to semiconductor material processing equipment technical field especially relates to planar static electricity restraint device. BACKGROUND

[0002] With the development of super large scale integrated circuit, the semiconductor surface processing technology requirement promotes, especially in wafer polishing and etching, the processing rate, surface damage, roughness and heat accumulation are required more highly. In recent years, super atom beam polishing and etching equipment are developed, and have been applied in super hard material polishing, precision optical device processing and other fields and achieved good results. After the adiabatic expansion of gas molecules, the thermal motion is reduced, and the van der waals force makes the molecules combine into nanoscale gas clusters. These clusters can be regarded as "atoms" in ionized collision and electromagnetic field, but the mass and collision cross section are much larger than that of single atom, which is called super atom.

[0003] The traditional Faraday cup for beam test, the charge is guided to the ground through the microammeter after the beam hits the cup wall, and the current shows the charge amount of ionized super atom beam per unit time. But when measuring the flow of super atom beam, because of the high mass and large collision cross section of super atom, the secondary electron yield is high, and the traditional test method is difficult to inhibit the escape of secondary electrons, resulting in measurement deviation. UTILITY MODEL CONTENT

[0004] The utility model aims at providing planar static electricity restraint device, utilizes the static electric field formed by bias voltage to restrain, reduces the influence that secondary electron escapes to the measurement result, inhibits the deviation of the measurement result of the beam to be measured.

[0005] In order to achieve this purpose, the utility model adopts the following technical scheme:

[0006] Planar static electricity restraint device is used for testing the beam to be measured, and the planar static electricity restraint device includes emission source and ground shield plate, static electricity restraint plate and charge receiving plate that are parallel and spaced along the emission direction in turn. The charge receiving plate has a charge receiving plane, and the emission direction is perpendicular to the charge receiving plane. The ground shield plate has a plurality of first through holes. The static electricity restraint plate has a plurality of second through holes, and the static electricity restraint plate is applied with bias voltage. The emission source is used for emitting the beam to be measured along the emission direction, so that the beam to be measured passes through the first through hole and the second through hole in turn and then impacts the charge receiving plane. The static electric field formed by the bias voltage returns the secondary electrons generated by the impact on the charge receiving plane to the charge receiving plane.

[0007] As an optional technical scheme of planar static electricity restraint device, the planar static electricity restraint device further includes a back assembly plate, the back assembly plate is located on the side of the charge receiving plate away from the static electricity restraint plate, and the ground shield plate is fixedly connected with the back assembly plate.

[0008] As an optional technical scheme of the planar electrostatic confinement device, the planar electrostatic confinement device further comprises a plurality of insulating pieces, at least one insulating piece is arranged between the ground shielding plate and the electrostatic confinement plate, and / or at least one insulating piece is arranged between the electrostatic confinement plate and the charge receiving plate, and / or at least one insulating piece is arranged between the charge receiving plate and the back assembly plate.

[0009] As an optional technical scheme of the planar electrostatic confinement device, the planar electrostatic confinement device further comprises at least one insulating fixing pin, the insulating fixing pin passes through the ground shielding plate, the electrostatic confinement plate and the charge receiving plate, and is detachably connected to the back assembly plate.

[0010] As an optional technical scheme of the planar electrostatic confinement device, one ear plate is bent at each end of the ground shielding plate, and the ear plate is pressed against the surface of the back assembly plate.

[0011] As an optional technical scheme of the planar electrostatic confinement device, all the first through holes are arranged in a matrix; and / or all the second through holes are arranged in a matrix.

[0012] As an optional technical scheme of the planar electrostatic confinement device, the number of the first through holes is the same as that of the second through holes and one-to-one correspondence; in a plane parallel to the charge receiving plane, the projection of each first through hole coincides with the projection of one second through hole.

[0013] As an optional technical scheme of the planar electrostatic confinement device, the planar electrostatic confinement device further comprises a bias voltage output circuit, the bias voltage output circuit is electrically connected to the electrostatic confinement plate, the bias voltage output circuit is used for applying the bias voltage to the electrostatic confinement plate, and the bias voltage output circuit can control the value of the bias voltage to be adjusted within a predetermined range.

[0014] As an optional technical scheme of the planar electrostatic confinement device, the predetermined range is -1V to -100V.

[0015] As an optional technical scheme of the planar electrostatic confinement device, the planar electrostatic confinement device further comprises a microammeter, the microammeter is electrically connected to the charge receiving plate, the microammeter is connected to the ground shielding plate in common, and the microammeter is used for measuring the current signal in the charge receiving plate.

[0016] The beneficial effects of the utility model are as follows:

[0017] The plane type electrostatic restraint device is characterized in that: the plane type electrostatic restraint device comprises a launching source, a grounding shielding plate, an electrostatic restraint plate and a charge receiving plate, the launching source launches a to-be-tested beam along a specific launching direction, the to-be-tested beam passes through the through holes on the grounding shielding plate and the electrostatic restraint plate in turn and then impacts the charge receiving plate, and the effective test on the related characteristics of the to-be-tested beam is realized. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a cross-sectional schematic view of the plane type electrostatic restraint device provided by the embodiment of the utility model;

[0019] Figure 2 is a structural schematic view of the plane type electrostatic restraint device provided by the embodiment of the utility model.

[0020] In the drawing:

[0021] 200, back assembly plate; 300, insulating piece; 400, grounding shielding plate; 401, first through hole; 500, microammeter; 600, insulating fixing pin; 700, electrostatic restraint plate; 701, second through hole; 800, charge receiving plate; 900, to-be-tested beam. DETAILED DESCRIPTION

[0022] The technical scheme of the utility model will be described clearly and completely in combination with the drawings, obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all the other embodiments obtained by the ordinary skilled in the art without making creative labor belong to the protection scope of the utility model.

[0023] In the description of the utility model, it is necessary to explain, the term "center", "upper", "lower", "left", "right", "vertical", "horizontal", "internal", "external" and so on indicate the orientation or position relation based on the orientation or position relation shown in the drawing, only for the convenience of describing the utility model and simplifying the description, and not indicate or imply that the indicated device or element must have a particular orientation, construct and operate in a particular orientation, therefore, it cannot be understood as a limitation on the utility model. In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance. Among them, the terms "first position" and "second position" are two different positions, and, the first feature is "above", "above" and "above" of the second feature, including the first feature is directly above and obliquely above the second feature, or just indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature is "below", "below" and "below" of the second feature, including the first feature is directly below and obliquely below the second feature, or just indicates that the horizontal height of the first feature is less than that of the second feature.

[0024] In the description of the utility model, it is necessary to explain, unless otherwise specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixed connection, can also be detachable connection, or integrally connected; it can be mechanical connection, can also be electrical connection; it can be directly connected, can also be indirectly connected through intermediate medium, can be the communication between two elements. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0025] The embodiments of the utility model are described in detail below, the examples of the embodiments are shown in the drawings, wherein the same or similar reference numerals represent the same or similar elements or elements with the same or similar function throughout. The embodiments described below by referring to the drawings are exemplary, only for explaining the utility model, and cannot be understood as a limitation on the utility model.

[0026] As Figure 1 And Figure 2As shown, the embodiment provides a planar electrostatic confinement device for testing a to-be-tested beam 900, which comprises an emission source and, in sequence along an emission direction, a grounded shielding plate 400, an electrostatic confinement plate 700 and a charge receiving plate 800; the charge receiving plate 800 has a charge receiving plane, and the emission direction is perpendicular to the charge receiving plane; the grounded shielding plate 400 has a plurality of first through holes 401; the electrostatic confinement plate 700 has a plurality of second through holes 701, and the electrostatic confinement plate 700 is applied with a bias voltage; the emission source is used to emit the to-be-tested beam 900 along the emission direction, so that the to-be-tested beam 900 impacts the charge receiving plane after sequentially passing through the first through holes 401 and the second through holes 701; and the secondary electrons generated by the impact on the charge receiving plane are returned to the charge receiving plane by the electrostatic field formed by the bias voltage.

[0027] The planar electrostatic confinement device realizes effective testing of the related characteristics of the to-be-tested beam 900 by setting the emission source, the grounded shielding plate 400, the electrostatic confinement plate 700 and the charge receiving plate 800, and emitting the to-be-tested beam 900 along a specific emission direction so that the to-be-tested beam 900 can impact the charge receiving plane after sequentially passing through the through holes on the grounded shielding plate 400 and the electrostatic confinement plate 700 according to the designed path. The secondary electrons generated by the impact on the charge receiving plane are returned to the plane by the electrostatic field formed by the bias voltage, which can reduce the influence of the escape of the secondary electrons on the measurement results, suppress the deviation of the measurement results of the to-be-tested beam 900, and improve the accuracy of the testing of the to-be-tested beam 900.

[0028] In order to ensure the uniformity of the electrostatic field, the electrostatic confinement plate 700 needs to be made into a porous structure, which causes part of the to-be-tested beam 900 to be blocked. However, the actual beam can be calculated by the blocking ratio. The scheme for calculating the actual beam according to the blocking ratio is well known in the art and is well known to those skilled in the art, and the improvement focus of the utility model is not protected, and will not be described here.

[0029] In addition, the above-mentioned planar electrostatic confinement device does not need to make the charge receiving surface into a cup shape, and thus has higher freedom and scalability. Compared with the conventional Faraday cup, the thickness is also significantly reduced, which has significant significance for high-integration testing equipment.

[0030] In this embodiment, the to-be-measured beam 900 takes an ultracold atomic beam as an example. By applying a bias voltage on the electrostatic confinement plate 700, the trajectory of the secondary electrons in the ultracold atomic beam can be confined. This is because the ionized ultracold atomic beam has a very high energy of about tens of thousands of electron volts, and a weak electrostatic field will not affect its motion trajectory. However, the average energy of the secondary electrons generated by collision is very low, only a few electron volts, so the electrostatic field can effectively confine the electrons on the charge receiving surface. The above confinement effectively reduces the interference of escaped charges on the measurement of the to-be-measured beam 900, as well as the current signal deviation caused by the escape of secondary electrons, thereby improving the accuracy of the measurement of the to-be-measured beam 900.

[0031] In this embodiment, the planar electrostatic confinement device further comprises a back assembly plate 200 located on the side of the charge receiving plate 800 away from the electrostatic confinement plate 700, and the ground shielding plate 400 is fixedly connected with the back assembly plate 200.

[0032] The provision of the back assembly plate 200 provides a support and fixing basis for the entire planar electrostatic confinement device. The ground shielding plate 400 is fixedly connected with the back assembly plate 200, thereby providing stable structural support for the planar electrostatic confinement device, enhancing the overall stability, reducing the displacement of components caused by external vibration or other factors, and facilitating the reliable operation of the planar electrostatic confinement device in different environments, thereby ensuring the reliability of the test.

[0033] In one embodiment of this embodiment, the planar electrostatic confinement device further comprises a plurality of insulating members 300. At least one insulating member 300 is arranged between the ground shielding plate 400 and the electrostatic confinement plate 700; at least one insulating member 300 is arranged between the electrostatic confinement plate 700 and the charge receiving plate 800; and at least one insulating member 300 is arranged between the charge receiving plate 800 and the back assembly plate 200.

[0034] The arrangement of the insulating members 300 between the ground shielding plate 400 and the electrostatic confinement plate 700, the electrostatic confinement plate 700 and the charge receiving plate 800, and the charge receiving plate 800 and the back assembly plate 200 can effectively prevent electrical conduction between the plates, ensure the electrical independence between the parts of the planar electrostatic confinement device, prevent current leakage and short circuit, ensure the stability of the electrical performance of the planar electrostatic confinement device, improve the safety and reliability of the planar electrostatic confinement device, and protect the safety of the operators.

[0035] In other embodiments of this embodiment, only one or two of the following are limited: at least one insulating member 300 is arranged between the ground shielding plate 400 and the electrostatic confinement plate 700; at least one insulating member 300 is arranged between the electrostatic confinement plate 700 and the charge receiving plate 800; and at least one insulating member 300 is arranged between the charge receiving plate 800 and the back assembly plate 200.

[0036] In the embodiment, the planar electrostatic confinement device further comprises at least one insulating fixing pin 600, which penetrates the grounding shielding plate 400, the electrostatic confinement plate 700 and the charge receiving plate 800 and is detachably connected to the back assembling plate 200.

[0037] The insulating fixing pin 600 penetrates the grounding shielding plate 400, the electrostatic confinement plate 700 and the charge receiving plate 800 and is detachably connected to the back assembling plate 200, which facilitates the assembly and disassembly of the planar electrostatic confinement device and is conducive to improving the efficiency of maintenance, repair and component replacement.

[0038] In the embodiment, the grounding shielding plate 400, the electrostatic confinement plate 700 and the charge receiving plate 800 are all rectangular plates with the same size, and the insulating fixing pin 600 is provided with four insulating fixing pins, each of which is used for fixing a corresponding corner of the grounding shielding plate 400, the electrostatic confinement plate 700 and the charge receiving plate 800. The insulating member 300 is a strip-shaped member, and two insulating members 300 are arranged between the grounding shielding plate 400 and the electrostatic confinement plate 700, between the electrostatic confinement plate 700 and the charge receiving plate 800 and between the charge receiving plate 800 and the back assembling plate 200, and two insulating fixing pins 600 penetrate each insulating member 300.

[0039] Exemplarily, the grounding shielding plate 400 is provided with a pressing lug at each end, which is pressed against the surface of the back assembling plate 200.

[0040] The pressing lug at each end of the grounding shielding plate 400 is pressed against the surface of the back assembling plate 200, which further enhances the connection stability between the grounding shielding plate 400 and the back assembling plate 200, makes the planar electrostatic confinement device more compact and reliable, and helps the grounding shielding plate 400 to better play the shielding role.

[0041] In one embodiment of the embodiment, all the first through holes 401 are arranged in a matrix; and all the second through holes 701 are arranged in a matrix.

[0042] The first through holes 401 and the second through holes 701 are arranged in a matrix, which makes the to-be-tested beam 900 more uniformly distributed when passing through the through holes, thereby forming a more uniform impact distribution on the charge receiving plane and improving the accuracy of measurement and the reliability of test data. This is conducive to improving the accuracy and consistency of the to-be-tested beam 900 test and avoiding the problem of local concentration or dispersion of the to-be-tested beam 900 caused by uneven distribution of the through holes.

[0043] In another embodiment of the embodiment, only all the first through holes 401 are arranged in a matrix; and in still another embodiment of the embodiment, only all the second through holes 701 are arranged in a matrix.

[0044] In the embodiment, the first through holes 401 and the second through holes 701 are the same in number and one-to-one correspondence; in the plane parallel to the charge receiving plane, the projection of each first through hole 401 coincides with the projection of one second through hole 701.

[0045] The first through holes 401 and the second through holes 701 are the same in number and one-to-one correspondence, and the projections coincide in the plane parallel to the charge receiving plane, which can ensure that the to-be-tested beam 900 accurately passes through the first through hole 401 and the second through hole 701, reduce the scattering and deviation of the to-be-tested beam 900 in the transmission process, improve the accuracy of the to-be-tested beam 900 reaching the charge receiving plane, and further improve the reliability of the test result.

[0046] Exemplarily, the planar electrostatic confinement device further comprises a bias voltage output circuit, the bias voltage output circuit is electrically connected to the electrostatic confinement plate 700, and the bias voltage output circuit is used to apply a bias voltage to the electrostatic confinement plate 700. The bias voltage output circuit can control the value of the bias voltage to be adjusted within a predetermined range.

[0047] The bias voltage output circuit can control the value of the bias voltage to be adjusted within a predetermined range, so that the electric field strength formed by the electrostatic confinement plate 700 can be flexibly adjusted according to different test requirements and beam characteristics, so as to achieve the best secondary electron confinement effect, and thus adapt to different types and parameters of the to-be-tested beam 900. The above limitation improves the applicability and flexibility of the planar electrostatic confinement device.

[0048] Further, the predetermined range is -1V to -100V.

[0049] The predetermined range of the bias voltage is set to -1V to -100V, which is optimized, provides a clear parameter interval for the adjustment of the bias voltage, and provides specific parameter reference for actual operation, so that the operator can reasonably set the bias voltage according to the actual situation. While meeting various test requirements, it can ensure that the electric field strength is not too large or too small, which not only ensures the normal operation of the planar electrostatic confinement device and the accuracy of the measurement, but also ensures that the planar electrostatic confinement device works in a safe and effective voltage range.

[0050] In the embodiment, the planar electrostatic confinement device further comprises a microammeter 500, the microammeter 500 is electrically connected to the charge receiving plate 800, and the microammeter 500 is connected to the ground shielding plate 400. The microammeter 500 is used to measure the current signal in the charge receiving plate 800.

[0051] The microammeter 500 is electrically connected with the charge receiving plate 800, so as to facilitate an operator to obtain current data generated by the charge receiving plate 800 impacted by the to-be-measured beam 900, realize the beam intensity measurement of the to-be-measured beam 900, and obtain relevant parameters of the to-be-measured beam 900 through monitoring and analysis of the current signal, thereby providing important data support for the to-be-measured beam 900 test.

[0052] The charge receiving plate 800 is directly electrically connected with the microammeter 500, and the charge receiving plate 800 is isolated from the electrostatic restraint plate 700 and the back assembly plate 200 through the insulating piece 300, so that the microammeter 500 only captures the net charge signal after the secondary electron collision on the charge receiving plane, thereby shielding external electromagnetic interference and improving the current measurement precision.

[0053] Obviously, the above embodiments of the present application are merely exemplary and are not intended to limit the embodiments of the present application. For those skilled in the art, other different forms of changes or modifications can be made on the basis of the above description. Here, it is not necessary and impossible to enumerate all the embodiments. Any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the claims of the present application.

Claims

1. Planar electrostatic confinement device for testing a beam under test (900), characterized in that, The planar electrostatic confinement device comprises a launching source and a ground shielding plate (400), an electrostatic confinement plate (700) and a charge receiving plate (800) which are arranged in sequence and in parallel along a launching direction; the charge receiving plate (800) has a charge receiving plane, and the launching direction is perpendicular to the charge receiving plane; the ground shielding plate (400) has a plurality of first through holes (401); the electrostatic confinement plate (700) has a plurality of second through holes (701), and the electrostatic confinement plate (700) is applied with a bias voltage; the launching source is used to launch the to-be-tested beam (900) along the launching direction, so that the to-be-tested beam (900) impacts the charge receiving plane after sequentially passing through the first through holes (401) and the second through holes (701); and the bias voltage forms an electrostatic field which returns the secondary electrons generated by the impact on the charge receiving plane to the charge receiving plane.

2. The planar electrostatic confinement apparatus of claim 1, wherein The planar electrostatic confinement device further comprises a back assembly plate (200) which is located on the side of the charge receiving plate (800) away from the electrostatic confinement plate (700), and the ground shielding plate (400) is fixedly connected with the back assembly plate (200).

3. The planar electrostatic confinement apparatus of claim 2, wherein The planar electrostatic confinement device further comprises a plurality of insulating pieces (300), at least one insulating piece (300) is arranged between the ground shielding plate (400) and the electrostatic confinement plate (700); and / or at least one insulating piece (300) is arranged between the electrostatic confinement plate (700) and the charge receiving plate (800); and / or at least one insulating piece (300) is arranged between the charge receiving plate (800) and the back assembly plate (200).

4. The planar electrostatic confinement apparatus of claim 3, wherein The planar electrostatic confinement device further comprises at least one insulating fixing pin (600) which passes through the ground shielding plate (400), the electrostatic confinement plate (700) and the charge receiving plate (800) and is detachably connected to the back assembly plate (200).

5. The planar electrostatic confinement apparatus of claim 2, wherein Each end of the ground shielding plate (400) is bent to have an ear plate which is pressed against the surface of the back assembly plate (200).

6. The planar electrostatic confinement apparatus of claim 1, wherein All the first through holes (401) are arranged in a matrix; and / or All the second through holes (701) are arranged in a matrix.

7. The planar electrostatic confinement apparatus of claim 1, wherein The number of the first through holes (401) is the same as that of the second through holes (701) and each first through hole (401) corresponds to one second through hole (701); in a plane parallel to the charge receiving plane, the projection of each first through hole (401) coincides with the projection of one second through hole (701).

8. The planar electrostatic confinement apparatus of claim 1, wherein The planar electrostatic confinement device further comprises a bias voltage output circuit which is electrically connected to the electrostatic confinement plate (700), is used to apply the bias voltage to the electrostatic confinement plate (700) and can control the value of the bias voltage to be adjusted within a predetermined range.

9. The planar electrostatic confinement apparatus of claim 8, wherein The predetermined range is -1V to -100V.

10. The planar electrostatic confinement apparatus of any of claims 1-9, wherein, The planar electrostatic confinement device further comprises a microammeter (500), the microammeter (500) is electrically connected with the charge receiving plate (800), the microammeter (500) is connected with the ground shielding plate (400) in common, and the microammeter (500) is used for measuring a current signal in the charge receiving plate (800).

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