Process chamber temperature control device

Abstract

The utility model discloses a temperature control device for a process chamber. The temperature control device comprises a PLC (Programmable Logic Controller), a cooling-water machine, a temperature thermocouple, a heating rod and the process chamber, the PLC is electrically connected with all the parts, the cooling-water machine is connected with the process chamber through a pipeline, and the temperature thermocouple and the heating rod are arranged on the chamber shell. The device is associated with process formula power setting, cavity wall temperature can be set, start and stop of heating are controlled according to temperature feedback, the cavity wall temperature can be automatically adjusted to meet requirements, and the stability of the plasma photoresist removing process is improved.

Description

Technical Field

[0001] This utility model relates to the field of wafer manufacturing technology, and in particular to a process chamber temperature control device. Background Technology

[0002] In today's advanced wafer manufacturing processes, plasma resist stripping equipment plays a crucial role and is an indispensable key piece of equipment in the entire production process. As manufacturing processes continue to develop towards higher precision and higher stability, the requirements for the stability of the plasma resist stripping process are becoming increasingly stringent.

[0003] In plasma photoresist stripping processes, ambient temperature is a critical parameter. During radio frequency (RF) output, highly reactive and high-energy ions are generated within the process chamber. These ions react with the photoresist on the wafer surface. Subsequently, the working gas flow and vacuum pump remove the volatile substances produced in the reaction, thereby achieving the removal of a certain thickness of photoresist. However, during this process, plasma discharge continuously generates heat, and due to variations in the power and duration of the RF discharge, the amount of heat generated varies, causing fluctuations in the process ambient temperature. The reactivity of the photoresist is significantly affected by ambient temperature, and these fluctuations directly lead to changes in the stripping rate, thus impacting the stability of the wafer manufacturing process and product quality. Therefore, developing a process chamber temperature control device has become a pressing issue for those skilled in the art. Utility Model Content

[0004] To address the aforementioned shortcomings, this invention provides a process chamber temperature control device. This device is linked to the power setting in the process formula, allowing for flexible setting of the chamber wall temperature and automatic adjustment to meet the set requirements. This effectively improves the stability of the plasma resist removal process and ensures the quality of wafer manufacturing.

[0005] The above-mentioned objective of this utility model is achieved through the following technical solution: a process chamber temperature control device, including a PLC controller, a chiller, a temperature measuring thermocouple, a heating rod, and a process chamber.

[0006] The PLC controller serves as the core of the entire device, establishing electrical connections with the chiller, thermocouples, and heating rods. The PLC controller possesses powerful control and data processing capabilities, enabling it to precisely control the chiller's inlet water temperature while simultaneously monitoring the real-time temperature of the process chamber's outer shell.

[0007] The chiller is connected to the cooling pipes of the process chamber through specific pipelines. Its function is to adjust the temperature of the cooling medium entering the process chamber according to the instructions of the PLC controller, thereby cooling the process chamber to balance the heat generated by plasma discharge, etc. The connecting pipeline can be connected by welding, flange connection, threaded connection or quick coupling connection, and the cooling pipes can be set inside or outside the outer shell of the process chamber, or by a combination of internal and external configuration.

[0008] The temperature-measuring thermocouple is accurately installed in the outer shell of the process chamber, typically embedded within it and located on one side of the heating rod. It can detect the temperature of the process chamber shell in real time and accurately, and feed this temperature information back to the PLC controller. Based on the received temperature feedback information, the PLC controller intelligently controls the operating status of the heating rod.

[0009] Thermocouples embedded in the outer shell of the process chamber can more accurately and quickly sense temperature changes within the chamber. Because they are in direct, close contact with the outer shell, external environmental interference is reduced, providing a more accurate reflection of the temperature within the chamber. For example, in this embodiment, this embedding method can shorten the temperature detection response time, from several seconds to sub-seconds, allowing the PLC controller to adjust the operating status of the heating rods or chiller more promptly based on temperature changes, further improving the timeliness and accuracy of temperature control.

[0010] The heating rod is installed at a specific location on the outer shell of the process chamber, typically embedded within it. When the power setting in the process recipe is c, the PLC controller activates the heating rod. The heating rod begins heating the process chamber, during which a thermocouple continuously monitors the real-time temperature. If the detected temperature does not reach the preset chamber wall temperature, the heating rod continues operating; if the temperature exceeds the set value, the PLC controller stops the heating rod. This method achieves precise temperature control of the process chamber, ensuring the chamber wall temperature remains stable within the set range to meet process requirements.

[0011] The heating rod is pre-embedded in the outer shell of the process chamber, allowing for more even heat distribution within the chamber. Because the heating rod is in direct contact with the outer shell, heat can be efficiently conducted to the chamber through the shell, avoiding localized overheating or undercooling caused by improper heating placement. In this embodiment, taking a specific process chamber as an example, the use of pre-embedded heating rods improves temperature uniformity within the chamber, reducing the temperature deviation range from ±3℃ to ±1℃, significantly ensuring the stability of the plasma adhesive removal process.

[0012] In addition, the device has an automatic adjustment function, which can automatically optimize and adjust the heating and cooling processes according to the actual temperature changes in the process, ensuring that the cavity wall temperature always meets the set requirements without frequent manual intervention, thus improving the accuracy and stability of temperature control.

[0013] The advantages of this utility model compared with the prior art are:

[0014] 1. Precise temperature control: Through the coordinated operation of PLC controller, chiller, temperature measuring thermocouple and heating rod, the temperature of the process chamber can be precisely controlled, so that the temperature of the chamber wall is stabilized near the set value. This effectively avoids the problem of unstable degumming rate caused by temperature fluctuation, and improves the stability of plasma degumming process and product quality.

[0015] 2. Linked to process formulation: The power setting of the device is linked to the process formulation, enabling intelligent control of the heating and cooling processes according to different process power requirements, achieving dynamic temperature adjustment, better adapting to different process requirements, and improving the flexibility and adaptability of the process.

[0016] 3. Automatic adjustment: It has an automatic adjustment function, which can monitor temperature changes in real time and automatically optimize control. It eliminates the need for frequent manual adjustments, reduces the impact of human factors on temperature control, improves production efficiency, and reduces the workload of operators. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of this utility model.

[0018] Figure 2 This is a schematic diagram of the bottom side structure of this utility model.

[0019] Figure 3 This is a flowchart illustrating the operational logic of the process chamber temperature control device. Detailed Implementation

[0020] The present invention will now be described in further detail with reference to the accompanying drawings.

[0021] Example 1: As Figure 1 , Figure 2 and Figure 3 As shown, a process chamber temperature control device includes a PLC controller 1, a chiller 2, a temperature measuring thermocouple 3, a heating rod 4, and a process chamber 5. The PLC controller 1 is electrically connected to the chiller 2, the temperature measuring thermocouple 3, and the heating rod 4. The chiller 2 is connected to the process chamber 5 through a pipeline. The temperature measuring thermocouple 3 and the heating rod 4 are embedded in the outer shell of the process chamber 5, and the temperature measuring thermocouple 3 is located on one side of the heating rod 4.

[0022] In a specific wafer fabrication plasma resist removal process, the temperature control device for the process chamber 5 of this invention is used. First, according to the process recipe requirements, the power in the process recipe is set to c. Then, by operating the PLC controller 1, the chamber wall temperature is set to a℃.

[0023] At this time, PLC controller 1 controls heating rod 4 to start working and heat the process chamber 5. Thermocouple 3, installed on the outer shell of process chamber 5, monitors the temperature of the chamber wall in real time and feeds the temperature information back to PLC controller 1. When the temperature of the chamber wall rises to b℃ (b>a), the thermocouple feeds back information, and after receiving the feedback, PLC controller 1 immediately controls heating rod 4 to stop heating.

[0024] During the process, if the cavity wall temperature drops due to various factors, and the temperature falls below a℃, PLC controller 1 will reactivate heating rod 4 to raise the cavity wall temperature back to the set range. Simultaneously, PLC controller 1 will adjust the inlet water temperature of chiller 2 according to process requirements to balance the heat within the process chamber 5 and ensure stable cavity wall temperature throughout the entire process.

[0025] In this embodiment, after multiple process operation tests, the cavity wall temperature can be stabilized within ±2℃ of the set value, effectively ensuring the stability of the plasma resist removal process and improving the product quality of wafer manufacturing.

[0026] Example 2: As Figure 1 , Figure 2 and Figure 3 As shown, the temperature control device for process chamber 5 is also applied under different process conditions. The power setting and chamber wall temperature setting are adjusted according to the new process formula. During process operation, the heat generated within process chamber 5 varies due to changes in RF discharge power.

[0027] However, through the precise control of the chiller 2, temperature-measuring thermocouple 3, and heating rod 4 by the PLC controller 1, and the automatic adjustment function of the device, the heating and cooling strategies can be adjusted in a timely manner according to temperature changes. For example, when the cavity wall temperature rises too quickly due to increased power, the PLC controller 1 will increase the control of the chiller 2 to reduce the inlet water temperature. At the same time, based on the temperature information fed back by the thermocouple, it will adjust the working state of the heating rod 4 in a timely manner to ensure that the cavity wall temperature is always kept within the set reasonable range.

[0028] Practical verification has shown that under different process conditions, this device can quickly and accurately control and adjust the temperature of process chamber 5, meeting diverse process requirements and demonstrating good adaptability and stability.

[0029] As can be seen from the above embodiments, the temperature control device for the process chamber 5 of this utility model can effectively achieve precise control and automatic adjustment of the temperature of the process chamber 5 in practical applications, and has significant practical value and promotion significance.

[0030] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A temperature control device for a process chamber, characterized in that: It includes a PLC controller, a chiller, a temperature measuring thermocouple, a heating rod, and a process chamber. The PLC controller is electrically connected to the chiller, the temperature measuring thermocouple, and the heating rod. The chiller is connected to the process chamber through a pipeline. The temperature measuring thermocouple and the heating rod are mounted on the outer shell of the process chamber.

2. The process chamber temperature control device according to claim 1, characterized in that: The temperature measuring thermocouple and the heating rod are embedded in the outer shell of the process chamber, with the temperature measuring thermocouple located on one side of the heating rod.

3. The process chamber temperature control device according to claim 1, characterized in that: The chiller is connected to the cooling pipes of the process chamber via pipelines, and the connection method is one of welding connection, flange connection, threaded connection or quick coupling connection.

4. The process chamber temperature control device according to claim 3, characterized in that: The cooling pipeline is located inside or outside the process chamber shell, or in a combination of both.

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