Multifunctional microwave radio frequency amplifier
By introducing reconfigurable drain and gate modules into microwave RF amplifiers and utilizing a combination of switching transistors and inductors, the performance reconfiguration of multifunctional microwave RF amplifiers is achieved. This solves the problems of increased circuit complexity and cost caused by the single performance in existing technologies, and simplifies circuit design and reduces costs.
Patent Information
- Application Number
- CN202520038188.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-08
- Publication Date
- 2026-02-03
- Estimated Expiration
- 2035-01-08
AI Technical Summary
Existing microwave RF amplifiers can only achieve one performance per chip, leading to complex circuit design and increased costs, making it difficult to meet the needs of different circuit performance.
Design a multifunctional microwave RF amplifier that achieves different performance outputs through a drain and gate reconfigurable module, including a combination of distributed amplifiers, switching transistors and inductors, and achieves performance reconfiguration by controlling the switching state of the switching transistors.
This enables the same chip to output multiple performance characteristics in different circuit designs, simplifying circuit design, reducing costs, and supporting miniaturization.
Smart Images
Figure CN223872261U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of microwave radio frequency circuits, and in particular to a multifunctional microwave radio frequency amplifier. Background Technology
[0002] Microwave RF amplifiers are widely used in test and measurement instruments, receivers, transmitters, and electronic equipment. As signal power amplification devices, they meet the system's power requirements by amplifying signal power and are one of the core components in circuit design. The main specifications of microwave RF amplifiers include frequency bandwidth, small-signal gain, output 1dB compression point, and noise figure.
[0003] Currently, existing microwave RF amplifiers can only achieve one performance per chip. In a complex system circuit design, microwave RF amplifiers with different performance are often required to meet the performance requirements of different circuits. This necessitates the selection of multiple microwave RF amplifiers, which undoubtedly makes the overall circuit design more complex, increases costs, and is not conducive to the miniaturization of the overall circuit. Utility Model Content
[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide a multifunctional microwave radio frequency amplifier, thus solving the deficiencies of the prior art.
[0005] The objective of this utility model is achieved through the following technical solution: a multifunctional microwave radio frequency amplifier, comprising a distributed amplifier, one end of which is connected to an input signal and the other end to an output signal, and further comprising a drain reconfigurable module and a gate reconfigurable module; one end of the drain reconfigurable module is connected to the distributed amplifier, and the other end is connected to a power supply Vdd to provide power to the distributed amplifier; one end of the gate reconfigurable module is connected to the distributed amplifier, and the other end is connected to a bias voltage Vg to provide gate bias to the distributed amplifier.
[0006] The drain reconfigurable module includes switching transistors M1 and M2, resistor R1, and inductor L2; one end of switching transistor M1 is connected in series with one end of resistor R1, and the other end of switching transistor M1 is connected to the distributed amplifier, while the other end of resistor R1 is connected to power supply Vdd; one end of switching transistor M2 is connected in series with one end of inductor L2, and the other end of switching transistor M2 is connected to the distributed amplifier, while the other end of inductor L2 is connected to power supply Vdd.
[0007] The gate reconfigurable module includes switching transistors M3 and M4, inductors L3 and L4; one end of switching transistor M3 is connected in series with one end of inductor L3, the other end of switching transistor M3 is connected to the distributed amplifier, and the other end of inductor L3 is connected to the bias voltage Vg; one end of switching transistor M4 is connected in series with one end of inductor L4, the other end of switching transistor M4 is connected to the distributed amplifier, and the other end of inductor L4 is connected to the bias voltage Vg.
[0008] This utility model has the following advantages: a multifunctional microwave RF amplifier, which achieves different output performances of microwave RF amplifier by using different reconstruction methods for the gate and drain, and can select the corresponding configuration method according to the circuit design requirements to achieve the ability of the same chip to output two performances. Attached Figure Description
[0009] Figure 1 This is a schematic diagram of the circuit structure of this utility model;
[0010] Figure 2 This is a circuit diagram of a drain reconfigurable module;
[0011] Figure 3 This is a circuit diagram of a gate reconfigurable module;
[0012] Figure 4 This is a schematic diagram of the equivalent circuit of the present invention in the 10MHz~50GHz operating mode;
[0013] Figure 5 This is a schematic diagram of the equivalent circuit of the present invention in the 6GHz~50GHz operating mode. Detailed Implementation
[0014] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can be arranged and designed in various different configurations. Therefore, the detailed description of the embodiments of this application provided below with reference to the accompanying drawings is not intended to limit the scope of protection of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application. The present invention will be further described below with reference to the accompanying drawings.
[0015] like Figure 1As shown, this utility model specifically relates to a multifunctional microwave radio frequency amplifier, which includes a distributed amplifier, one end of which is connected to an input signal and the other end to an output signal. It also includes a drain reconfigurable module and a gate reconfigurable module. One end of the drain reconfigurable module is connected to the distributed amplifier, and the other end is connected to a power supply Vdd to provide power to the distributed amplifier. One end of the gate reconfigurable module is connected to the distributed amplifier, and the other end is connected to a bias voltage Vg to provide gate bias to the distributed amplifier.
[0016] Furthermore, such as Figure 2 As shown, the drain reconfigurable module includes switching transistors M1 and M2, resistor R1, and inductor L2. One end of switching transistor M1 is connected in series with one end of resistor R1, and the other end of switching transistor M1 is connected to the distributed amplifier. The other end of resistor R1 is connected to the power supply Vdd. One end of switching transistor M2 is connected in series with one end of inductor L2, and the other end of switching transistor M2 is connected to the distributed amplifier. The other end of inductor L2 is connected to the power supply Vdd. The drain reconfigurable module provides power to the distributed amplifier module. It forms a switching inductor by connecting an on-chip inductor in series with a switch. The switching inductor and resistor R1 are then connected in parallel to form the reconfigurable drain reconfigurable module. The switch can be controlled by voltage, thereby controlling the reconfigurable drain module and realizing the reconfigurable function.
[0017] Furthermore, such as Figure 3 As shown, the gate reconfigurable module includes switching transistors M3 and M4, inductors L3 and L4; one end of switching transistor M3 is connected in series with one end of inductor L3, and the other end of switching transistor M3 is connected to a distributed amplifier, while the other end of inductor L3 is connected to a bias voltage Vg; one end of switching transistor M4 is connected in series with one end of inductor L4, and the other end of switching transistor M4 is connected to the distributed amplifier, while the other end of inductor L4 is connected to a bias voltage Vg; the gate reconfigurable module provides gate bias for the distributed amplifier module, and it also forms a switching inductor by connecting an on-chip inductor in series with a switch, and the switching inductors are then connected in parallel to form a reconfigurable inductor. The reconfigurable function is achieved by controlling the inductor connected to the circuit through voltage.
[0018] like Figure 4As shown, in the 10MHz~50GHz operating mode, switches M1 and M3 in the reconfigurable module are turned on, while switches M2 and M4 are turned off. When the switches are on, they are equivalent to a conducting resistor; when they are closed, they are equivalent to a capacitor. In this state, the LNA operates in ultra-wideband mode, achieving low-noise amplification from 10MHz to 50GHz. In this operating mode, the circuit's input return loss S11 is less than -12.3 dB, output return loss S22 is less than -10.8 dB, circuit gain S21 is 13.96-16.1 dB, gain flatness is ±1.07 dB, noise figure is less than 4.35 dB, reverse isolation S12 is greater than 22.96 dB, and the output 1 dB compression point is greater than 10.47 dBm.
[0019] like Figure 5 As shown, the circuit operates in a 6GHz~50GHz mode. In this mode, switches M2 and M4 in the reconfigurable module are on, while switches M1 and M3 are off. When the switches are on, they function as an on-resistance; when closed, they function as a capacitor. In this module, the parasitic capacitance of the switching transistors is compensated by the inductor L2 in the reconfigurable drain module, and the LNA operates in high linearity mode, achieving high linearity and low noise amplification from 6GHz to 50GHz. In this operating mode, the circuit's input return loss S11 is less than -12.9 dB, output return loss S22 is less than -13.65 dB, circuit gain S21 is 14.5-16.8 dB, gain flatness is ±1.15 dB, noise figure is less than 4.69 dB, reverse isolation S12 is greater than 23.8 dB, and the output 1dB compression point is greater than 15.19 dBm.
[0020] The above description is merely a preferred embodiment of this utility model. It should be understood that this utility model is not limited to the form disclosed herein and should not be construed as excluding other embodiments. It can be used in various other combinations, modifications, and improvements, and can be altered within the scope of the concept described herein through the above teachings or related technologies or knowledge. Modifications and variations made by those skilled in the art that do not depart from the spirit and scope of this utility model should be protected within the scope of the appended claims.
Claims
1. A multifunctional microwave radio frequency amplifier, comprising a distributed amplifier, one end of which is connected to an input signal and the other end of which outputs a signal, characterized in that: It also includes a drain reconfigurable module and a gate reconfigurable module; one end of the drain reconfigurable module is connected to the distributed amplifier, and the other end is connected to the power supply Vdd to provide power to the distributed amplifier; one end of the gate reconfigurable module is connected to the distributed amplifier, and the other end is connected to the bias voltage Vg to provide gate bias to the distributed amplifier.
2. The multifunctional microwave radio frequency amplifier according to claim 1, characterized in that: The drain reconfigurable module includes switching transistors M1 and M2, resistor R1, and inductor L2; one end of switching transistor M1 is connected in series with one end of resistor R1, and the other end of switching transistor M1 is connected to the distributed amplifier, while the other end of resistor R1 is connected to power supply Vdd; one end of switching transistor M2 is connected in series with one end of inductor L2, and the other end of switching transistor M2 is connected to the distributed amplifier, while the other end of inductor L2 is connected to power supply Vdd.
3. The multifunctional microwave radio frequency amplifier according to claim 1, characterized in that: The gate reconfigurable module includes switching transistors M3 and M4, inductors L3 and L4; one end of switching transistor M3 is connected in series with one end of inductor L3, the other end of switching transistor M3 is connected to the distributed amplifier, and the other end of inductor L3 is connected to the bias voltage Vg; one end of switching transistor M4 is connected in series with one end of inductor L4, the other end of switching transistor M4 is connected to the distributed amplifier, and the other end of inductor L4 is connected to the bias voltage Vg.