Pin straight-out sub-power module and three-phase full-bridge power module

Abstract

The utility model belongs to the field of power semiconductors, and particularly relates to a Pin straight-out sub-power module and a three-phase full-bridge power module, the Pin straight-out sub-power module comprises an insulating plate, a plurality of IGBT chips, a plurality of FRD chips, a plurality of metal sheets and a plurality of Pins, the insulating plate is provided with a plurality of collector electrode connecting plates and a plurality of emitter electrode connecting plates, one IGBT chip and one FRD chip form a group and are connected in parallel with an emitter connecting plate through a metal sheet, a Pin directly extends out of the top of the module, and traditional lead bonding is replaced by metal sheet bonding, so that the limitation that the current passing capacity of a lead is small can be avoided, the current passing capacity is improved, the short-circuit capacity and the current sharing capacity of the semiconductor power module can be improved, and the service life of the semiconductor power module is prolonged. And the surface heat capacity of the chip is increased, the transient junction temperature of the chip of the module under the limiting working condition can be reduced, the anti-surge capability and the limiting working condition capability of the power module can be further improved by changing the size of the metal sheet, and the reliability of the power module is further improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of power semiconductors, and particularly relates to a Pin pin-straight-out sub-power module and a three-phase full-bridge power module. BACKGROUND

[0002] At present, most commercial vehicle modules are silicone potting modules, and the electrical connection adopts a bonding wire mode, and the process maturity is very high. Compared with the traditional silicone potting and bonding wire process, a plastic packaging process module can further reduce the module cost and improve the module reliability, and is a research hotspot in the current automobile field.

[0003] The power module lining plate wiring of the existing bonding wire process is as shown in the drawing, Figure 1 which comprises IGBT chips (1a, 1b, 1c and 1d), FRD chips (2a, 2b, 2c and 2d), bonding wires (3), collector connecting plates (4a, 4b and 4c), emitter connecting plates (5a and 5b) and an insulating plate (6). The IGBT chips and the FRD chips are welded on the lining plate, and the front surfaces of the IGBT and the FRD are connected to the lining plate through the bonding wires. The current-carrying capacity of the traditional aluminum wire bonding is small, and it will not be able to meet the requirements of high power levels; the fixing effect of the traditional silicone potting module on the bonding wire is limited, and the module reliability is poor. SUMMARY

[0004] The technical problem to be solved by the application is to provide a Pin pin-straight-out sub-power module and a three-phase full-bridge power module, to solve the problem of small current-carrying capacity of the traditional lead bonding, to improve the current-carrying capacity, and to improve the short-circuit capability and the current-sharing capability of the power module.

[0005] The application provides a Pin pin-straight-out sub-power module, comprising: an insulating plate, a plurality of IGBT chips, a plurality of FRD chips, a plurality of metal sheets and a plurality of Pin pins, the insulating plate is provided with a plurality of collector connecting plates and a plurality of emitter connecting plates, one IGBT chip and one FRD chip are connected in parallel through a metal sheet and an emitter connecting plate to form a group, and the Pin pins are directly straightened out from the top of the module.

[0006] Optionally, the IGBT chips are four, the FRD chips are four, and a total of four chip groups each comprising one IGBT chip and one FRD chip are divided into chip group one, chip group two, chip group three and chip group four; the collector connecting plates are three, the emitter connecting plates are two, chip group one and chip group two are connected to one collector connecting plate, chip group three and chip group four are connected to the other two collector connecting plates, the emitters of chip group one and chip group two are respectively connected in parallel through a metal sheet and an emitter connecting plate, and the emitters of chip group three and chip group four are respectively connected in parallel through a metal sheet and another emitter connecting plate and another collector connecting plate.

[0007] Optionally, the collector connecting plate is a DBC backing plate, a DBA backing plate or an AMB backing plate.

[0008] Optionally, the emitter connecting plate is a DBC backing plate, a DBA backing plate or an AMB backing plate.

[0009] Optionally, the collector connecting plate and / or the emitter connecting plate comprises an intermediate ceramic layer and a surface metal layer.

[0010] Optionally, the Pin needle (60) is a PressFit fish eye needle or a C-shaped needle.

[0011] Optionally, the material of the intermediate ceramic layer is alumina, aluminum nitride or silicon nitride, and the material of the surface metal layer is copper, copper-molybdenum alloy or aluminum.

[0012] Optionally, the material of the metal sheet is aluminum or copper.

[0013] Optionally, the metal sheet comprises a plurality of flat plates and a plurality of curved connecting ribs, at least one curved connecting rib is connected between two adjacent flat plates, and the plurality of flat plates are connected with the IGBT chip, the FRD chip, the collector connecting plate and the emitter connecting plate respectively.

[0014] Optionally, a plurality of through holes are formed on the flat plate.

[0015] Optionally, the collector connecting plate and the emitter connecting plate are connected with a lead terminal.

[0016] The application provides a three-phase full-bridge power module, comprising three sub-power modules, and each of the sub-power modules is a phase.

[0017] The metal sheet bonding replaces the traditional lead bonding, which can avoid the limitation of small current-carrying capacity of the lead, improve the current-carrying capacity, improve the short-circuit capacity and current-sharing capacity of the semiconductor power module, increase the surface heat capacity of the chip (IGBT chip, FRD chip), reduce the transient junction temperature of the chip under extreme working conditions, further improve the surge resistance and extreme working condition capacity of the power module by changing the size (including area and thickness) of the metal sheet, and further improve the reliability of the power sub-module.

[0018] The three-phase full-bridge power module provided by the application has improved current-carrying capacity, short-circuit capacity and current-sharing capacity through the power sub-module. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 FIG. 1 is a structural schematic diagram of an existing sub-power module;

[0020] Figure 2This is a schematic diagram of the sub-power module of this application;

[0021] Figure 3 This is a schematic diagram of another metal sheet structure for the sub-power module of this application;

[0022] Figure 4 This is a schematic diagram of the sub-power module after the model conversion in this application;

[0023] Figure 5 This is a schematic diagram of the three-phase full-bridge power module after the conversion in this application.

[0024] In the diagram: 100, Sub-power Module; 10, Insulating Board; 21, IGBT Chip; 22, FRD Chip; 2.1, Chipset 1; 2.2, Chipset 2; 2.3, Chipset 3; 2.4, Chipset 4; 30, Metal Sheet; 31, Flat Plate; 311, Through Hole; 32, Bending Connecting Rib; 40, Collector Connecting Plate; 50, Emitter Connecting Plate; 60, Pin; 70, Lead Terminal; 80, Pin Socket; 200, Heat Dissipation Base Plate. Detailed Implementation

[0025] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0026] Firstly, such as Figures 2-4 As shown, the present application provides a sub-power module with pins extending directly out, including: an insulating plate 10, multiple IGBT chips 21, multiple FRD chips 22, multiple metal sheets 30, and multiple pins 60. The insulating plate 10 is provided with multiple collector connection plates 40 and multiple emitter connection plates 50. An IGBT chip 21 and an FRD chip 22 are connected in parallel with the emitter connection plate 50 through the metal sheet 30. The pins 60 extend directly out from the top of the module.

[0027] Compared with the prior art, the sub-power module 100 provided in this application uses metal sheet 30 bonding instead of traditional wire bonding, which can avoid the limitation of small current carrying capacity of wires, improve current carrying capacity, enhance the short-circuit capability and current sharing capability of semiconductor power module, and increase the surface heat capacity of chips (IGBT chip 21, FRD chip 22), which can reduce the transient junction temperature of chips under extreme conditions. By changing the size (including area and thickness) of metal sheet 30, the surge resistance and extreme condition capability of power module can be further improved, and the reliability of power sub-module 100 can be further improved.

[0028] It should be noted that the pins 60 are vertically connected to multiple collector connection plates 40 and multiple emitter connection plates 50 respectively, which greatly increases the compactness of the module and improves the power density of the power submodule 100.

[0029] In one embodiment, such as Figure 2 As shown, there are four IGBT chips 21 and four FRD chips 22, forming a total of chipsets 1.2.1, 2.2.2, 2.3.3, and 2.4, each containing one IGBT chip 21 and one FRD chip 22. There are three collector connection plates 40 and two emitter connection plates 50. Chipset 1.2.1 and chipset 2.2 are connected to one collector connection plate 40, while chipset 3.3 and chipset 4.4 are connected to the other two collector connection plates 40 respectively. The emitters of chipset 1.2.1 and chipset 2.2 are connected in parallel to the emitter connection plate 50 via metal sheets 30, and the emitters of chipset 3.3 and chipset 4.4 are connected in parallel to another emitter connection plate 50 and another collector connection plate 40 via metal sheets 30, respectively. The interconnection between the metal sheet 30 and the chip emitter can be achieved using techniques such as welding, silver sintering, and copper sintering. The interconnection between the metal sheet 30 and the collector connection plate 40 and the emitter connection plate 50 can be achieved using techniques such as ultrasonic welding and laser welding, thereby improving the reliability of the power submodule 100.

[0030] In one embodiment, the collector connection plate 40 and / or the emitter connection plate 50 are DBC liners, DBA liners, or AMB liners.

[0031] In one embodiment, the collector connection plate 40 and / or the emitter connection plate 50 include an intermediate ceramic layer and a surface metal layer.

[0032] In one embodiment, the intermediate ceramic layer is made of alumina, aluminum nitride, or silicon nitride, and the surface metal layer is made of copper, copper-molybdenum alloy, or aluminum.

[0033] In one embodiment, the pin 60 is a PressFit fisheye pin or a C-type pin. Specifically, the surface of the pin 60 has a plating layer, which can be tin or gold. The pin 60 extends directly from the top of the module, either as an integrated pin or by connecting to the pin holder 80, greatly increasing the module's compactness and power density. The pin holder 80 can be designed as a circular pin holder or a T-shaped pin holder, and the connection with the collector connection plate 40 and the emitter connection plate 50 can be achieved using welding or ultrasonic welding.

[0034] In one embodiment, the material of the metal sheet 30 is aluminum or copper, the interconnection between the metal sheet 30 and the chip emitter can adopt welding, silver sintering, copper sintering and other technologies, and the interconnection with the surface metal layer can adopt ultrasonic welding and laser welding and other technologies to improve the reliability of the module. The module adopts a transfer molding process to reduce the deformation of the metal sheet 30 and reduce the stress on the chip, thereby improving the reliability of the power sub-module 100.

[0035] In one embodiment, the metal sheet 30 includes a plurality of flat plates 31 and a plurality of curved connecting ribs 32, at least one curved connecting rib 32 is connected between two adjacent flat plates 31, and the plurality of flat plates 31 are respectively connected with the IGBT chip 21, the FRD chip 22, the collector connecting plate 40 and the emitter connecting plate 50. By reducing the width of the connecting rib, the rigidity of the metal sheet 30 is reduced, the surface metal layer after welding is raised, the welding area with the chip is increased, the through hole 311 design is increased, the stress is buffered, and the damage of the metal sheet 30 to the chip is reduced. This is only one scheme, and the metal sheet 30 can have various structures. In the case of the same width, a single curved connecting rib 32 and a plurality of curved connecting ribs 32 can be used. The shape of the curved connecting rib 32 is C-shaped or V-shaped.

[0036] In one embodiment, a plurality of through holes 311 are formed in the flat plate 31, which can also reduce the rigidity of the metal sheet 30 and reduce the raising of the surface metal layer after welding.

[0037] In one embodiment, the collector connecting plate 40 and the emitter connecting plate 50 are connected with the lead terminal 70. The lead terminal 70 is made of pure copper material, and the connection between the collector connecting plate 40 and the emitter connecting plate 50 can adopt welding, sintering, ultrasonic welding and other technologies, and the external connection can adopt laser welding and screwing.

[0038] In some embodiments, the number of chips can be increased or decreased according to actual application requirements.

[0039] In one embodiment, the collector connecting plate 40 and the emitter connecting plate 50 are connected with the lead terminal 70. The lead terminal 70 is made of pure copper material, and the connection between the collector connecting plate 40 and the emitter connecting plate 50 can adopt welding, sintering, ultrasonic welding and other technologies, and the external connection can adopt laser welding and screwing. Figure 5 As shown in FIG. 1, the present application provides a three-phase full-bridge power module, which includes three sub-power modules 100, and each sub-power module 100 is for one phase. It should be noted that this is only one scheme, and the number of sub-power modules can be increased or decreased according to actual application requirements. The sub-power modules are welded on a heat dissipation bottom plate 200, which can be a pure metal structure (such as copper or aluminum alloy) or an AlSiC material. In order to enhance the oxidation resistance and corrosion resistance of the heat dissipation bottom plate, a protective layer (such as nickel plating) can be added to the surface thereof.

[0040] Those skilled in the art should understand that the above discussion of any embodiment is only intended to be illustrative and is not intended to be limiting to the scope of the present application; the above embodiments or technical features among different embodiments can also be combined, the steps can be implemented in any order, and there are many other changes to different aspects of one or more embodiments of the present application as described above, which are not provided in details for the sake of brevity.

[0041] One or more embodiments of the present application are intended to cover all such alternatives, modifications, and variations as falling within the broad scope of the application. Accordingly, any omission, modification, equivalent replacement, improvement, etc. made within the spirit and principle of one or more embodiments of the present application should be included in the scope of the present application.

Claims

1. A pin straight out sub-power module, characterized in that, It comprises: An insulating plate (10), a plurality of IGBT chips (21), a plurality of FRD chips (22), a plurality of metal sheets (30) and a plurality of Pin needles (60), the insulating plate (10) is provided with a plurality of collector connecting plates (40) and a plurality of emitter connecting plates (50), one IGBT chip (21) and one FRD chip (22) are connected in parallel through a metal sheet (30) and an emitter connecting plate (50), and the Pin needle (60) is directly led out from the top of the module.

2. The sub-power module according to claim 1, characterized by, The IGBT chip (21) is four, the FRD chip (22) is four, and a total of four chip groups including one IGBT chip (21) and one FRD chip (22) are divided into chip group one (2.1), chip group two (2.2), chip group three (2.3) and chip group four (2.4); the collector connecting plate (40) is three, the emitter connecting plate (50) is two, the chip group one (2.1) and the chip group two (2.2) are connected on one collector connecting plate (40), the chip group three (2.3) and the chip group four (2.4) are connected on the other two collector connecting plates (40), and the emitter of the chip group one (2.1) and the chip group two (2.2) is connected in parallel through a metal sheet (30) and an emitter connecting plate (50), and the emitter of the chip group three (2.3) and the chip group four (2.4) is connected in parallel through a metal sheet (30) and another emitter connecting plate (50) and another collector connecting plate (40).

3. The sub-power module of claim 1, wherein, The collector connecting plate (40) is a DBC backing plate, a DBA backing plate or an AMB backing plate; And / or, the emitter connecting plate (50) is a DBC backing plate, a DBA backing plate or an AMB backing plate.

4. The sub-power module of claim 1, wherein, The collector connecting plate (40) and / or the emitter connecting plate (50) comprises an intermediate ceramic layer and a surface metal layer; And / or, the Pin needle (60) is a PressFit fish eye needle or a C-shaped needle.

5. The sub-power module of claim 4, wherein, The material of the intermediate ceramic layer is aluminum oxide, aluminum nitride or silicon nitride, and the material of the surface metal layer is copper, copper-molybdenum alloy or aluminum.

6. The sub-power module according to any one of claims 1 to 5, characterized by, The material of the metal sheet (30) is aluminum or copper.

7. The sub-power module according to any one of claims 1 to 5, characterized by, The metal sheet (30) comprises a plurality of flat plates (31) and a plurality of curved connecting ribs (32), at least one curved connecting rib (32) is connected between two adjacent flat plates (31), and a plurality of flat plates (31) are connected with IGBT chips (21), FRD chips (22), collector connecting plates (40) and emitter connecting plates (50) respectively.

8. The sub-power module of claim 7, wherein, A plurality of through holes (311) are formed on the flat plate (31).

9. The sub-power module according to any one of claims 1 to 5, characterized by, The collector connecting plate (40) and the emitter connecting plate (50) are connected with a lead terminal (70).

10. A three-phase full-bridge power module comprising three sub-power modules (100) as claimed in any one of claims 1-9, each of the sub-power modules (100) being a phase.

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