Discrete device with insulation

Abstract

The utility model provides a discrete device with insulation, which comprises a metal radiating plate fixed on the upper end face of a copper-clad ceramic substrate, and a power chip fixed on the upper end face of the metal radiating plate. The metal pin is fixedly connected with one side end of the metal heat dissipation plate; the plastic package shell comprises a copper-clad ceramic substrate, a metal heat dissipation plate and a power chip; the lower end face of the copper-clad ceramic substrate is exposed out of the plastic package shell, and the bottom of the plastic package shell is flush. The utility model provides a discrete device with insulation capability after leaving a factory, an insulation spacer does not need to be installed, the phenomenon that the thickness of coated heat-conducting silicone grease is not uniform is reduced, the production cost is reduced, and the production efficiency is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor devices, especially to a discrete device with insulation. BACKGROUND

[0002] At present, IGBT modules are more and more widely used in the fields of frequency converters, welding machines, induction heating, photovoltaic inversion, wind power inversion and electric vehicles, and the requirements for volume, output efficiency and reliability of discrete devices are becoming more and more stringent.

[0003] At present, the discrete devices of IGBT (Insulated Gate Bipolar Transistor) do not have insulation capability when they are shipped, and the back of the discrete device is exposed and not insulated during use, that is, the back is conductive, so that the customer needs to apply thermal silicone grease to the heat dissipation surface of the discrete device during installation, install an insulating gasket on the thermal silicone grease, and then apply thermal silicone grease to the insulating gasket before installing it on the heat sink, which increases the material cost, increases the process, and ultimately increases the whole machine production link and production cost, affecting the production efficiency. UTILITY MODEL CONTENTS

[0004] Based on the above problems, the utility model provides a discrete device with insulation, aiming to solve the technical problems of complex production of discrete devices of IGBT in the prior art.

[0005] A discrete device with insulation, comprising:

[0006] A copper-clad ceramic substrate;

[0007] A metal heat sink fixed to the upper end surface of the copper-clad ceramic substrate, and the upper end surface of the metal heat sink is fixed with a power chip;

[0008] A metal pin fixedly connected to one side end of the metal heat sink;

[0009] A plastic encapsulation shell including the copper-clad ceramic substrate, the metal heat sink and the power chip;

[0010] The lower end surface of the copper-clad ceramic substrate is exposed outside the plastic encapsulation shell and the bottom of the plastic encapsulation shell is flat.

[0011] Further, the power chip includes an insulated gate bipolar transistor chip and a diode chip;

[0012] The insulated gate bipolar transistor chip and the diode chip are connected by a metal lead;

[0013] The insulated gate bipolar transistor chip is connected to the metal pin by a metal lead.

[0014] Further, the copper-clad ceramic substrate is a double-sided copper-clad ceramic substrate composed of a lower metal layer, an intermediate insulating layer and an upper metal layer.

[0015] The bottom surface of the lower metal layer is exposed outside the plastic package shell and is flush with the bottom of the plastic package shell.

[0016] Further, the length of the upper metal layer is less than the length of the intermediate insulating layer, and the width of the upper metal layer is less than the width of the intermediate insulating layer.

[0017] The length of the lower metal layer is less than the length of the intermediate insulating layer, and the width of the lower metal layer is less than the width of the intermediate insulating layer.

[0018] Further, the thickness of the metal heat sink and the thickness of the metal pin are consistent.

[0019] Further, the metal heat sink is fixed on the upper end surface of the copper-clad ceramic substrate by solder.

[0020] Further, the power chip is welded to the upper surface of the metal heat sink by soldering.

[0021] Further, the thickness of the metal heat sink ranges from 0.4 to 2 mm.

[0022] Further, the length of the metal heat sink is 16-18 cm, and the width of the metal heat sink is 12-15 cm.

[0023] Further, the material of the metal layer is pure copper or copper alloy, and the material of the insulating layer is silicon nitride, aluminum oxide or aluminum nitride.

[0024] The beneficial technical effects of the utility model lie in that the metal heat sink is arranged on the copper-clad ceramic substrate, the metal heat sink is wrapped by resin on the copper-clad ceramic substrate, and only the bottom surface of the copper-clad ceramic substrate is exposed, thereby providing a discrete device with insulation capacity, eliminating the need for installing an insulating gasket, and enabling the discrete device to be installed on a heat sink by coating only one layer of thermal conductive silicone grease, solving the problem of complex installation process in the installation process of customers, greatly reducing the phenomenon of uneven thickness of the coated thermal conductive silicone grease, reducing production cost and improving production efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figures 1-5 It is a structure diagram of the discrete device with insulation of the utility model;

[0026] Among them,

[0027] 1 - device body;

[0028] 2 - metal pin;

[0029] 3-metal heat sink plate;

[0030] 4-copper clad ceramic substrate;

[0031] 5-plastic package shell;

[0032] 6-metal lead;

[0033] 7-insulated gate bipolar transistor chip;

[0034] 8-diode chip;

[0035] 4A-insulating layer;

[0036] 4B-intermediate layer;

[0037] 9-first solder;

[0038] 10-second solder. DETAILED DESCRIPTION

[0039] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0040] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0041] The present application will be further described below with reference to the drawings and specific embodiments, but is not limited to the present application.

[0042] Referring to Figures 1-5 , the present application provides a discrete device with insulation, comprising:

[0043] copper clad ceramic substrate (4);

[0044] metal heat sink plate (3), the metal heat sink plate (3) is fixed on the upper end surface of the copper clad ceramic substrate (4), and the upper end surface of the metal heat sink plate (3) is fixed with a power chip;

[0045] metal pin (2), the metal pin and one side end of the metal heat sink plate (3) are fixedly connected;

[0046] plastic package shell (5), the plastic package shell (5) comprises the copper clad ceramic substrate (4), the metal heat sink plate (3) and the power chip;

[0047] The lower end surface of the copper clad ceramic substrate (4) is exposed outside the plastic package shell (5) and the bottom of the plastic package shell (5) is flat.

[0048] The discrete device with insulation includes a device body (1) and a metal pin (2) fixedly arranged at one end of the device body (1), the device body (1) includes a metal heat dissipation plate (3), a copper clad ceramic substrate DBC (4), a power chip and a plastic sealing shell (5).

[0049] The metal heat dissipation plate (3) and the metal pin (2) form a heat dissipation frame, the frame is a non-profile material, the metal heat dissipation plate, the DBC and the power chip are covered in the plastic sealing shell by welding the DBC at the bottom of the heat dissipation surface of the frame, and the bottom end of the DBC is exposed outside the plastic sealing shell and is flush with the bottom of the plastic sealing shell, so that the discrete device has the insulation capacity, the discrete device with the insulation capacity is provided, and the discrete device does not need to be installed with an insulation gasket, and only needs to be coated with one layer of thermal conductive silicone grease to be installed on a heat sink, the complex installation process of a customer in the installation process is solved, the phenomenon that the thickness of the thermal conductive silicone grease is uneven is greatly reduced, the production cost is reduced, and the production efficiency is improved.

[0050] Further, the power chip includes an insulated gate bipolar transistor chip (7) and a diode chip (8);

[0051] The insulated gate bipolar transistor chip (7) and the diode chip (8) are connected through a metal lead (6);

[0052] The insulated gate bipolar transistor chip (7) is connected to the metal pin (2) through the metal lead (6).

[0053] One side end of the metal heat dissipation plate (3) is connected with the metal pin (2), and the power chip is fixedly welded on the top of the metal heat dissipation plate (3) through the first solder (9), and the power chip is electrically connected with the metal pin (2) through the lead (6).

[0054] The plastic sealing material is used to improve the voltage resistance between the chips, between the metal pins and between the metal heat dissipation plate and the metal pin.

[0055] Further, the copper clad ceramic substrate (4) is a double-sided copper plated ceramic substrate composed of a lower metal layer (4B), an intermediate insulating layer (4A) and an upper metal layer (4B).

[0056] The bottom surface of the lower metal layer (4B) serves as the lower end surface of the copper clad ceramic substrate (4), is exposed outside the plastic sealing shell (5) and is flush with the bottom of the plastic sealing shell (5).

[0057] Further, the metal layer (4B) is made of pure copper, copper alloy or a weldable metal plating layer.

[0058] Further, the insulating layer is made of silicon nitride, aluminum oxide or aluminum nitride.

[0059] Specifically, the thickness of the metal layer (4B) is 0.1mm-0.4mm, and the thickness of the insulating layer (4A) is 0.3-1mm.

[0060] Further, the length of the upper metal layer (4B) is less than the length of the middle insulating layer (4A), and the width of the upper metal layer (4B) is less than the width of the middle insulating layer (4A).

[0061] The length of the lower metal layer (4B) is less than the length of the middle insulating layer (4A), and the width of the lower metal layer (4B) is less than the width of the middle insulating layer (4A).

[0062] Specifically, the length of the insulating layer (4A) is 16-18cm, and the width is 12-15cm. It is fixed and welded to the bottom of the metal heat sink by the welding method of the second solder (10).

[0063] Further, the thickness of the metal heat sink (3) and the thickness of the metal pin (2) are consistent.

[0064] Most of the frames of discrete devices on the market are profiled materials, and the thickness of the metal heat sink and the metal pin of the frame is inconsistent, and the metal heat sink is very thick. The frame used in the present scheme is a non-profiled material, and the thickness of the metal heat sink and the metal pin is consistent. The price will be lower, the processing will be simpler, and it is also convenient to weld DBC at the bottom of the heat sink, so that its appearance is consistent with the current market, and also makes it close to the original in terms of heat dissipation.

[0065] Further, the metal heat sink (3) is fixed to the upper end face of the copper-clad ceramic substrate (4) by solder (10).

[0066] Further, the power chip is welded to the upper surface of the metal heat sink (3) by soldering.

[0067] Further, the thickness of the metal heat sink (3) is 0.4-2mm.

[0068] Further, the length of the metal heat sink (3) is 16-18cm, and the width of the metal heat sink (3) is 12-15cm.

[0069] Specifically, the thickness of the plastic package shell (5) is more than 1.5mm.

[0070] The utility model discloses use plastic package shell and cover DBC, metal heat sink and chip together, only expose the bottom of DBC outside, through DBC and plastic package shell make it self -insulation. It is applied to the discrete device of IGBT, for example 247PLUS, standard 247, T0-263 etc. single tube use, but not limited to these, it realizes the insulating property of IGBT single tube through DBC, uses more convenient, greatly reduces the cost of installation.

[0071] The above is only the preferred embodiment of the utility model, and does not limit the implementation and protection scope of the utility model, and for those skilled in the art, it should be realized that the scheme obtained by equivalent replacement and obvious change of the utility model specification and drawing contents should be contained in the protection scope of the utility model.

Claims

1. An insulated discrete device, characterized by, include: Copper-clad ceramic substrate (4); Metal heat sink (3), the metal heat sink (3) is fixed on the upper surface of the copper-clad ceramic substrate (4), and a power chip is fixed on the upper surface of the metal heat sink (3); Metal pin (2), the metal pin and one side end of the metal heat sink (3) are fixedly connected; A plastic encapsulated housing (5), the plastic encapsulated housing (5) comprising the copper-clad ceramic substrate (4), the metal heat sink (3) and the power chip; The lower end face of the copper-clad ceramic substrate (4) is exposed outside the plastic encapsulation shell (5), and the bottom of the plastic encapsulation shell (5) is flat.

2. A discrete device with built-in insulation as defined in claim 1, characterized in that The power chip includes an insulated gate bipolar transistor chip (7) and a diode chip (8); The insulated gate bipolar transistor chip (7) and the diode chip (8) are connected by metal leads (6); The insulated gate bipolar transistor chip (7) is connected to the metal pin (2) via a metal lead (6).

3. A discrete device with built-in insulation as defined in claim 1, wherein, The copper-clad ceramic substrate (4) is a double-sided copper-plated ceramic substrate consisting of a lower metal layer (4B), a middle insulating layer (4A), and an upper metal layer (4B). The bottom surface of the lower metal layer (4B) serves as the lower end surface of the copper-clad ceramic substrate (4), is exposed outside the plastic encapsulation shell (5), and the bottom of the plastic encapsulation shell (5) is flat.

4. A discrete device with built-in insulation as defined in claim 3, wherein The length of the upper metal layer (4B) is less than the length of the middle insulating layer (4A), and the width of the upper metal layer (4B) is less than the width of the middle insulating layer (4A). The length of the lower metal layer (4B) is less than the length of the middle insulating layer (4A), and the width of the lower metal layer (4B) is less than the width of the middle insulating layer (4A).

5. The self-insulated discrete device of claim 1, wherein, The thickness of the metal heat sink (3) is consistent with the thickness of the metal pin (2).

6. An insulated discrete device as defined in claim 1, wherein The metal heat sink (3) is fixed to the upper surface of the copper-clad ceramic substrate (4) by solder (10).

7. An insulated discrete device as defined in claim 1, wherein The power chip is soldered to the upper surface of the metal heat sink (3) by soldering.

8. The self-insulated discrete device of claim 1, wherein, The thickness of the metal heat sink (3) ranges from 0.4 to 2 mm.

9. The self-insulated discrete device of claim 1, wherein, The length of the metal heat sink (3) is 16-18cm, and the width of the metal heat sink (3) is 12-15cm.

10. A discrete device with self-insulation as described in claim 3, characterized in that, The metal layer (4B) is made of pure copper or copper alloy, and the insulating layer is made of silicon nitride, aluminum oxide or aluminum nitride.

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