Carrier plate for hot filament chemical vapor deposition equipment and equipment using carrier plate
By increasing the surface roughness of the carrier plate through sandblasting, the problems of uneven heating and film detachment in hot filament chemical vapor deposition equipment are solved, achieving efficient heating control and high-volume production.
Patent Information
- Application Number
- CN202520119243.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-17
- Publication Date
- 2026-02-10
- Estimated Expiration
- 2035-01-17
AI Technical Summary
Existing hot filament chemical vapor deposition equipment with vertical carrier plates suffers from film cracking and delamination during the heating process, and the heating is uneven, which cannot meet the needs of high-volume production.
Sandblasting increases the roughness of the back surface of the carrier plate, reduces specular reflection, increases radiation absorption, and improves the heating rate, keeping it within the process cycle time.
It effectively reduces film cracking and delamination on the front side of the carrier plate, accelerates the heating of the carrier plate, and meets the requirements of high-volume production.
Smart Images
Figure CN223892855U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of photovoltaic module conveying and transporting, in particular to a carrier plate for hot filament chemical vapor deposition equipment and a hot filament chemical vapor deposition equipment using the same. BACKGROUND
[0002] Hot Filament Chemical Vapor Deposition (HoFCVD) is a kind of vacuum equipment that can realize large-scale production of silicon wafer coating. The key point of its high yield is that the carrier plate of other silicon wafer coating equipment (such as PECVD) is in a horizontal lying type, so that only one carrier plate can be coated in one process. The carrier plate used in HoFCVD is a vertical double-sided carrier plate, which can realize coating on two opposite carrier plates in one process, so that the production capacity can be doubled compared with the horizontal carrier plate. The front surface of the carrier plate does not receive radiation in the heating cavity and is opposite to the hot filament, and the back surface of the carrier plate receives radiation in the process cavity and is opposite to the hot filament, so that the carrier plate is heated and uniformed.
[0003] In the actual production process, the silicon wafer is placed in the silicon wafer groove (placement area) on the front surface of the HoFCVD carrier plate, and the area outside the silicon wafer groove (referred to as the blank area) will inevitably be coated with a film layer during the process. Since the initial carrier plate is relatively smooth (roughness Ra = 0.1-1 μm), as the film layer thickness accumulates on the front surface of the carrier plate, the adhesion of the film layer on the carrier plate becomes weak, which will lead to film cracking and film fragment shedding, which is extremely detrimental to silicon wafer coating. Moreover, once the film fragments fall into the cavity, it will cause contamination of the cavity. That is, the ordinary carrier plate is made of aluminum-silicon alloy, and the film on the front surface of the blank area will crack and peel off when the film accumulates to a certain thickness (15-30 μm). The back surface of the ordinary carrier plate heats up slowly due to receiving heat from the hot filament, and the heating time is long (100-200 s), which does not meet the process beat requirements. Therefore, the optimization design of the vertical carrier plate is crucial to meet the actual production requirements of HoFCVD. CONTENT OF THE UTILITY MODEL
[0004] In order to solve the problems existing in the prior art, the present application provides a carrier plate for hot filament chemical vapor deposition equipment, which increases the roughness of the back surface of the carrier plate by sandblasting, and enhances the light trapping effect in the heating cavity by the concave-convex surface after sandblasting, so that less specular reflection light is generated compared with the ordinary carrier plate, the light is trapped in the carrier plate to receive more radiation, the heating rate of the carrier plate is accelerated, and the heating time is controlled within the process beat.
[0005] In a first aspect, some embodiments of the present application provide a carrier plate for a hot filament chemical vapor deposition device, comprising: a body which is generally flat; a first surface which is located on one side of the body and comprises a plurality of placement areas for placing materials to be processed and blank areas outside the placement areas; and a second surface which is located on the other side of the body and faces away from the first surface; the blank areas of the first surface are subjected to sand blasting treatment; and the second surface is subjected to sand blasting treatment.
[0006] Embodiments of the present application increase the roughness of the back surface of the carrier plate by sand blasting, thereby generating less specularly reflected light, light is trapped in the carrier plate to receive more radiation, and the heating rate of the carrier plate is accelerated, so that the heating time is controlled within the process cycle.
[0007] In some embodiments, the sand blasting treatment is performed by using 46# white corundum.
[0008] In some embodiments, the roughness of the first surface and the second surface after sand blasting treatment is 3-5 μm.
[0009] In some embodiments, the body is a cuboid.
[0010] In some embodiments, the sand blasting treatment is performed by using copper ore sand.
[0011] In some embodiments, the roughness of the first surface and the second surface after sand blasting treatment is 3.5-4.5 μm.
[0012] In some embodiments, the body is a cube.
[0013] In a second aspect, some embodiments of the present application provide a hot filament chemical vapor deposition device using the above-mentioned carrier plate in a heating chamber.
[0014] Embodiments of the present application use the above-mentioned carrier plate, so that the heating time is controlled within the process cycle.
[0015] In some embodiments, two carrier plates in the heating chamber are mirror-symmetrically arranged vertically and parallel at a distance of 10-30 cm.
[0016] In some embodiments, the heating chamber further comprises a plurality of hot filaments which are parallel and vertically arranged at a distance of 5-20 cm from the second surface of the carrier plate, and the hot filaments are mirror-symmetrically arranged.
[0017] The present application provides a carrier plate for a hot filament chemical vapor deposition device. It mainly has the following advantages: reducing the phenomenon of carrier plate front film cracking and film peeling; accelerating the heating of the carrier plate in the heating chamber and controlling it within the process cycle. BRIEF DESCRIPTION OF DRAWINGS
[0018] The accompanying drawings, which are incorporated herein and constitute part of the specification, illustrate embodiments consistent with the application and, together with the description, serve to explain the principles of the application.
[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the accompanying drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced. Obviously, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative effort.
[0020] Figure 1 A schematic view of a carrier plate for a hot filament chemical vapor deposition apparatus.
[0021] In the figure: 1-first surface, 2-second surface, 3-hot filament, 10-body. DETAILED DESCRIPTION
[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the accompanying drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced. Obviously, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative effort.
[0023] In the following description, a large number of specific details are set forth in order to facilitate a thorough understanding of the present application, but the present application can also be implemented in other ways different from those described herein; obviously, the embodiments described in the specification are only some of the embodiments of the present application, not all the embodiments.
[0024] At least to increase the roughness of the back surface of the carrier plate by sandblasting, and to enhance the light trapping effect in the heating cavity by the concave-convex surface after sandblasting, so as to produce less specular reflection light compared with the ordinary carrier plate, the light is trapped into the carrier plate to receive more radiation, to speed up the heating rate of the carrier plate, to control the heating time within the process cycle, the first embodiment of the present application provides a carrier plate for a hot filament chemical vapor deposition apparatus, comprising: a body which is generally flat; a first surface which is located on one side of the body and comprises a plurality of placement areas for placing materials to be processed and a blank area outside the placement area; and a second surface which is located on the other side of the body and faces away from the first surface; the blank area of the first surface is subjected to sandblasting treatment; and the second surface is subjected to sandblasting treatment.
[0025] It can be understood that the carrier plate for a hot filament chemical vapor deposition apparatus provided by the embodiments of the present application can effectively improve the technical defects existing in the carrier plate structure of the related art.
[0026] The following will be described in conjunction with Figure 1The above-mentioned carrier plate is exemplarily described, and the structure of the carrier plate is exemplarily described. It should be noted that those skilled in the art can design a carrier plate different from the carrier plate of the above-mentioned carrier plate according to specific needs based on the concept of the above-mentioned carrier plate. Figure 1
[0027] Firstly, the corresponding components or units of the carrier plate are briefly introduced in combination with the reference signs. Figure 1
[0028] The reference sign 1 is used to represent the first surface, which is the front surface of the carrier plate, i.e., the surface on which the material to be processed is placed; the reference sign 2 is used to represent the second surface, which is the back surface of the carrier plate, i.e., the opposite surface of the front surface; the reference sign 3 is used to represent the hot wire, which is the hot wire in the heating cavity of the hot wire chemical vapor deposition device; and the reference sign 10 is used to represent the body, which is the body of the carrier plate.
[0029] Secondly, the carrier plate of some embodiments of the present application is exemplarily described in combination with the above-mentioned reference signs.
[0030] Figure 1 It is a schematic view of the carrier plate for the hot wire chemical vapor deposition device involved in the present application.
[0031] As shown in Figure 1 , the carrier plate for the hot wire chemical vapor deposition device provided by the embodiments of the present application comprises: a body 10 which is generally flat; a first surface 1 which is located on one side of the body 10 and comprises a plurality of placement areas for placing the material to be processed (such as a silicon wafer) and a blank area outside the placement areas; and a second surface 2 which is located on the other side of the body 10 and faces away from the first surface 1; the blank area of the first surface 1 is subjected to sand blasting treatment; and the second surface 2 is subjected to sand blasting treatment.
[0032] Among them, the hot wire chemical vapor deposition device can use the existing known device.
[0033] In addition, the sand blasting treatment is performed by using 46# white corundum. Of course, it is not limited to this, and the sand blasting treatment can also be performed using other materials, such as copper ore sand, iron sand, sea sand, etc.
[0034] In addition, the roughness of the first surface 1 and the second surface 2 after the sand blasting treatment is 3-5 μm. Of course, other roughness can also be used, for example, preferably 3.5-4.5 μm.
[0035] The body 10 is a cuboid, for example, the size is 813*613*6 mm, of course, it is not limited to this, and other sizes can also be used. In addition, the body 10 can also be a square.
[0036] In addition, the embodiments of the present application provide a hot wire chemical vapor deposition device which uses the above-mentioned carrier plate in the heating cavity.
[0037] AsFigure 1 As shown, in the heating chamber of a hot-wire chemical vapor deposition apparatus, two carrier plates are arranged vertically and parallel to each other in a mirror-like manner, spaced 10–30 cm apart. Of course, the distance is not limited to 10–30 cm and can be adjusted as needed. Also, the number of carrier plates is not limited to two; it can be three, four, five, or more.
[0038] like Figure 1 As shown, the heating chamber of the hot-wire chemical vapor deposition apparatus also includes multiple hot wires 3. The hot wires 3 are parallel and vertically positioned at a distance of 5–20 cm from the second surface 2 of the carrier plate, and the hot wires 3 are mirror-symmetrical. Obviously, the distance is not limited to 5–20 cm and can be adjusted as needed.
[0039] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other.
[0040] In the description of this application, it should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.
[0041] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art will understand the specific meaning of the above terms in this application based on the specific circumstances.
[0042] For those skilled in the art, any modifications or alterations made based on the above embodiments of this application, without departing from the spirit of this application, should be included within the scope of protection of this application.
Claims
1. A carrier plate for a hot-wire chemical vapor deposition apparatus, characterized in that, include: The main body (10) is generally flat; The first surface (1), located on one side of the body (10), includes multiple placement areas for placing materials to be processed and blank areas outside the placement areas; and The second surface (2) is located on the other side of the body (10) and is opposite to the first surface (1); The blank area of the first surface (1) is sandblasted; The second surface (2) is sandblasted.
2. The carrier plate for the hot-wire chemical vapor deposition equipment according to claim 1, characterized in that: The sandblasting process is performed using 46# white corundum.
3. The carrier plate for the hot-wire chemical vapor deposition equipment according to claim 1, characterized in that: The roughness of the first surface (1) and the second surface (2) after sandblasting is 3 to 5 μm.
4. The carrier plate for the hot-wire chemical vapor deposition equipment according to claim 1, characterized in that: The main body (10) is a cuboid.
5. The carrier plate for the hot-wire chemical vapor deposition equipment according to claim 1, characterized in that: The sandblasting process is performed using copper ore sand.
6. The carrier plate for the hot-wire chemical vapor deposition equipment according to claim 1, characterized in that: The roughness of the first surface (1) and the second surface (2) after sandblasting is 3.5 to 4.5 μm.
7. The carrier plate for a hot-wire chemical vapor deposition apparatus according to claim 1, characterized in that: The main body (10) is a cube.
8. A hot-filament chemical vapor deposition apparatus, characterized in that, The carrier plate according to any one of claims 1-7 is used in the heating chamber.
9. The hot-filament chemical vapor deposition apparatus according to claim 8, characterized in that, In the heating chamber, the two carrier plates are mirror-symmetrical and vertically parallel, spaced 10 to 30 cm apart.
10. The hot-filament chemical vapor deposition apparatus according to claim 8, characterized in that, The heating chamber also includes a plurality of heating wires (3), which are parallel and vertically positioned at a distance of 5 to 20 cm from the second surface (2) of the carrier plate, and the heating wires (3) are mirror symmetrical.