Bonding head calibration mechanism

Abstract

The utility model discloses a bonding head calibration mechanism, and relates to the technical field of semiconductor chip packaging. The bonding head calibration mechanism comprises a bonding head and a bearing table arranged below the bonding head, a light beam emitting assembly and a light beam receiving assembly are arranged above the bonding head, a reflecting mirror group is arranged on the bonding head, and a light beam emitted by the light beam emitting assembly is reflected to the light beam receiving assembly at a reference point of the reflecting mirror group; an emission light beam of the light beam emission assembly is parallel to a receiving light beam of the light beam receiving assembly, and the parallel distance between the emission light beam of the light beam emission assembly and the receiving light beam of the light beam receiving assembly is a first parallel distance; and the remote analysis module calculates the offset of the bonding head according to the difference between the first parallel distance and the real-time distance between the emitted light beam and the received light beam in the change process of the distance between the bonding head and the bearing table. The bonding process can be monitored in real time and adjusted in real time, the bonding offset is reduced, and the bonding precision is greatly improved.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of semiconductor chip packaging, in particular to a bonding head calibration mechanism. BACKGROUND

[0002] Advanced packaging technology breaks the limitation of relying on chip process upgrading in the past. It starts from the packaging link of the chip, optimizes the connection mode between the chip and the external world, and improves the integration, thereby opening up a new world for the improvement of chip performance. Among them, W2W (wafer-to-wafer bonding) and D2W (die-to-wafer bonding) are the most advanced technologies in the field of advanced packaging.

[0003] The core of D2W technology focuses on the chip-wafer bonding link. This process is like building a precise bridge in the microscopic world, which accurately and stably connects a small chip to the wafer, and builds a complex and efficient circuit system. However, the widely used bonding method at present has a rather troublesome problem, that is, the bonding offset is large. In the nanometer or sub-nanometer bonding operation, a small offset can cause disastrous consequences, such as signal transmission delay, circuit short circuit, chip function failure, etc., which not only greatly reduces the yield of the chip, but also seriously hinders the further development of advanced packaging technology towards higher performance and higher integration. Therefore, a new solution is urgently needed to overcome this difficulty. CONTENT OF THE UTILITY MODEL

[0004] The purpose of the application is to provide a bonding head calibration mechanism which can calibrate the precision of the bonding head.

[0005] The embodiment of the application is implemented as follows:

[0006] The embodiment of the application provides a bonding head calibration mechanism, which comprises a bonding head and a bearing table arranged below the bonding head. A light beam emitting assembly and a light beam receiving assembly are arranged above the bonding head. A mirror group is arranged on the bonding head. The light beam emitted by the light beam emitting assembly is reflected to the light beam receiving assembly at a reference point of the mirror group. The emitting light beam of the light beam emitting assembly and the receiving light beam of the light beam receiving assembly are parallel. The parallel distance between the emitting light beam of the light beam emitting assembly and the receiving light beam of the light beam receiving assembly is a first parallel distance.

[0007] The remote analysis module calculates the offset of the bonding head according to the difference between the real-time distance of the emitting light beam and the receiving light beam in the distance change process between the bonding head and the bearing table and the first parallel distance.

[0008] Optionally, as an implementable mode, the bonding head has a bonding surface corresponding to the carrier table and a calibration surface arranged away from the bonding surface, and the mirror group is arranged on the calibration surface.

[0009] Optionally, as an implementable mode, the mirror group comprises a first V-shaped mirror and a second V-shaped mirror arranged on the calibration surface, and V-shaped grooves of the first V-shaped mirror and the second V-shaped mirror are perpendicular to each other.

[0010] Optionally, as an implementable mode, the light beam emitting assembly comprises a first light beam emitting assembly corresponding to the first V-shaped mirror and a second light beam emitting assembly corresponding to the first V-shaped mirror, and the light beam receiving assembly comprises a first light beam receiving assembly corresponding to the first V-shaped mirror and a second light beam receiving assembly corresponding to the first V-shaped mirror.

[0011] Optionally, as an implementable mode, the first V-shaped mirror has a first reflecting surface and a second reflecting surface perpendicular to each other, the second V-shaped mirror has a third reflecting surface and a fourth reflecting surface perpendicular to each other, and the first reflecting surface and the second reflecting surface have the same angle with the calibration surface, and the third reflecting surface and the fourth reflecting surface have the same angle with the calibration surface.

[0012] Optionally, as an implementable mode, the calibration surface is rectangular, the first reflecting surface and the second reflecting surface are arranged along the long side direction of the rectangle, and the third reflecting surface and the fourth reflecting surface are arranged along the short side direction of the rectangle.

[0013] Optionally, as an implementable mode, the first V-shaped mirror and the second V-shaped mirror are both four in number, and the first V-shaped mirror and the second V-shaped mirror are both arranged at four corners of the calibration surface.

[0014] Optionally, as an implementable mode, the bonding head is provided with a first mounting groove and a second mounting groove, the first V-shaped mirror is mounted through the first mounting groove, and the second V-shaped mirror is mounted through the second mounting groove.

[0015] Optionally, as an implementable mode, the bonding head is provided with a first V-shaped mounting seat and a second V-shaped mounting seat, the first V-shaped mirror is mounted through the first V-shaped mounting seat, and the second V-shaped mirror is mounted through the second V-shaped mounting seat.

[0016] Optionally, as an implementable mode, a driving mechanism is further included, and the bonding head is driven to move by the driving mechanism.

[0017] The beneficial effects of the embodiments of the present application include:

[0018] The bonding head calibration mechanism provided by the application comprises a bonding head, a bearing table arranged below the bonding head, a light beam emitting assembly and a light beam receiving assembly arranged above the bonding head, and a mirror group arranged on the bonding head, wherein the light beam emitted by the light beam emitting assembly is reflected to the light beam receiving assembly at a reference point of the mirror group, the emitting light beam of the light beam emitting assembly and the receiving light beam of the light beam receiving assembly are parallel, and the parallel distance of the emitting light beam of the light beam emitting assembly and the receiving light beam of the light beam receiving assembly is a first parallel distance.

[0019] The remote analysis module calculates the offset of the bonding head according to the difference between the real-time distance of the emitting light beam and the receiving light beam in the distance change process between the bonding head and the bearing table and the first parallel distance, monitors the state of the bonding head in real time during the bonding process, and corrects the offset immediately once the offset is found, thereby avoiding accumulated errors and guaranteeing the continuity and stability of chip-wafer bonding and improving production efficiency. The optical measurement principle can sensitively capture the nanometer and sub-nanometer level offset of the bonding head, greatly improves the calibration accuracy compared with the traditional mechanical positioning or rough detection method, and effectively reduces the problem of chip yield reduction caused by bonding offset. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the application, the drawings needed in the embodiments will be briefly introduced as follows. It should be understood that the following drawings only show some embodiments of the application, and therefore should not be regarded as a limitation on the scope. Other related drawings can also be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0021] Figure 1 The structure schematic diagram of the bonding head calibration mechanism provided by the embodiments of the application is shown in the figure.

[0022] Figure 2 The structure schematic diagram of the bonding head in the bonding head calibration mechanism provided by the embodiments of the application is shown in the figure.

[0023] Figure 3 The structure schematic diagram of the bonding head in the bonding head calibration mechanism provided by the embodiments of the application is shown in the figure.

[0024] Figure 4 The structure schematic diagram of the bonding head in the bonding head calibration mechanism provided by the embodiments of the application is shown in the figure.

[0025] Icon: 100 - Bonding head calibration mechanism; 110 - Bonding head; 111 - Bonding surface; 112 - Calibration surface; 120 - Carrying table; 130 - Mirror set; 131 - First V-shaped mirror; 1311 - First reflecting surface; 1312 - Second reflecting surface; 132 - Second V-shaped mirror; 1321 - Third reflecting surface; 1322 - Fourth reflecting surface; 140 - Light beam emitting assembly; 150 - Light beam receiving assembly. DETAILED DESCRIPTION

[0026] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the following will be combined with the accompanying drawings for the embodiments of the present application to make a clear and complete description of the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the accompanying drawings can be arranged and designed in various different configurations.

[0027] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without making creative efforts fall within the scope of protection of the present application.

[0028] It should be noted that: similar reference numerals and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings. In addition, the terms "first", "second", "third" and the like are only used to distinguish description, and cannot be understood as indicating or implying relative importance.

[0029] In the description of the present application, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set", "install", "connect", "connect" should be understood broadly, for example, can be fixedly connected, can be detachably connected, or integrally connected; can be mechanically connected, or electrically connected; can be directly connected, or indirectly connected through an intermediate medium, can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0030] Please refer to Figure 1 and Figure 2The embodiment provides a bonding head calibration mechanism 100, which comprises a bonding head 110, a bearing table 120 arranged below the bonding head 110, a light beam emitting assembly 140 and a light beam receiving assembly 150 arranged above the bonding head 110, a mirror group 130 arranged on the bonding head 110, a light beam emitted by the light beam emitting assembly 140 is reflected to the light beam receiving assembly 150 at a reference point of the mirror group 130, the emitted light beam of the light beam emitting assembly 140 is parallel to the received light beam of the light beam receiving assembly 150, and the parallel distance of the emitted light beam of the light beam emitting assembly 140 and the received light beam of the light beam receiving assembly 150 is a first parallel distance.

[0031] The remote analysis module calculates the offset of the bonding head 110 according to the difference between the first parallel distance and the real-time distance between the emitted light beam and the received light beam in the distance change process between the bonding head 110 and the bearing table 120.

[0032] In the chip wafer bonding process, a chip is assembled on the side of the bonding head 110 facing the bearing table 120, and a wafer to be bonded is assembled on the bearing table 120. When bonding, the bonding head 110 is driven to move linearly towards the bearing table 120. Initially, the point where the light beam emitted by the light beam emitting assembly 140 is projected to the mirror group 130 is the reference point. The light beam emitted by the light beam emitting assembly 140 is reflected to the light beam receiving assembly 150 at the reference point of the mirror group 130. The parallel distance of the emitted light beam of the light beam emitting assembly 140 and the received light beam of the light beam receiving assembly 150 is the first parallel distance. During the movement process, the emitted light beam of the light beam emitting assembly 140 is parallel to the received light beam of the light beam receiving assembly 150. In the distance change process between the bonding head 110 and the bearing table 120, the distance between the emitted light beam and the received light beam is the real-time distance. The remote analysis module calculates the offset of the bonding head 110 according to the difference between the first parallel distance and the real-time distance between the emitted light beam and the received light beam in the distance change process between the bonding head 110 and the bearing table 120. The offset is corrected and compensated, so as to calibrate the precision of the bonding head 110 and ensure the bonding precision.

[0033] The bonding head calibration mechanism 100 provided by the application comprises a bonding head 110, a bearing table 120 arranged below the bonding head 110, a light beam emitting assembly 140 and a light beam receiving assembly 150 arranged above the bonding head 110, a mirror group 130 arranged on the bonding head 110, a light beam emitted by the light beam emitting assembly 140 is reflected to the light beam receiving assembly 150 at a reference point of the mirror group 130, the emitted light beam of the light beam emitting assembly 140 is parallel to the received light beam of the light beam receiving assembly 150, and the parallel distance of the emitted light beam of the light beam emitting assembly 140 and the received light beam of the light beam receiving assembly 150 is a first parallel distance.

[0034] The remote analysis module calculates the offset of the bonding head 110 according to the difference between the real-time distance of the emitted light beam and the received light beam in the process of changing the distance between the bonding head 110 and the carrier table 120, monitors the state of the bonding head 110 in real time during the bonding process, and corrects the offset immediately once the offset is found, thereby avoiding accumulated errors and ensuring the continuity and stability of the chip-wafer bonding and improving the production efficiency. By using the optical measurement principle, the nanometer and sub-nanometer level offset of the bonding head 110 can be captured sensitively, and compared with the traditional mechanical positioning or rough detection method, the calibration accuracy is greatly improved, and the problem of chip yield reduction caused by bonding offset is effectively reduced.

[0035] In an embodiment of the present application, as shown in Figure 1 and Figure 2 , the bonding head 110 has a bonding surface 111 corresponding to the carrier table 120 and a calibration surface 112 arranged away from the bonding surface 111, and the mirror group 130 is arranged on the calibration surface 112.

[0036] In actual operation, the bonding surface 111 directly participates in the bonding process of the chip and the wafer, and the calibration surface 112 is specially used to carry the mirror group 130, which provides a key optical reflection basis for accurately measuring the offset of the bonding head 110. Separating the mirror group 130 from the bonding operation surface can avoid damage or precision interference of the mirror group 130 arranged on the calibration surface 112 caused by physical impact, impurity contamination and other factors during the bonding process, and can provide convenience for subsequent maintenance, debugging and upgrading of the mirror group 130 without disassembling the key bonding parts.

[0037] In an embodiment of the present application, as shown in Figure 1 and Figure 2 , the mirror group 130 includes a first V-shaped mirror 131 and a second V-shaped mirror 132 arranged on the calibration surface 112, and the V-shaped grooves of the first V-shaped mirror 131 and the second V-shaped mirror 132 are perpendicular to each other. In operation, the light beam from the light beam emitting assembly 140 is irradiated onto the V-shaped mirror, and due to the special reflection characteristics of the V-shaped structure, the light beam can be reflected to the light beam receiving assembly 150 at a specific angle. The first V-shaped mirror 131 is mainly responsible for capturing the displacement information of the bonding head 110 in one direction (such as the horizontal X-axis direction), and the perpendicular V-shaped groove makes the light beam reflection path extremely sensitive to the displacement in this direction; similarly, the second V-shaped mirror 132 is responsible for displacement monitoring perpendicular to the first direction (such as the horizontal Y-axis direction), and the two cooperate with each other to comprehensively cover the two-dimensional plane offset of the bonding head 110 that may occur through accurate light beam reflection in different directions.

[0038] In an embodiment of the present application, as shown inFigure 1 and Figure 2 As shown, the beam emitting assembly 140 includes a first beam emitting assembly 140 corresponding to the first V-shaped reflector 131 and a second beam emitting assembly 140 corresponding to the first V-shaped reflector 131. The beam receiving assembly 150 includes a first beam receiving assembly 150 corresponding to the first V-shaped reflector 131 and a second beam receiving assembly 150 corresponding to the first V-shaped reflector 131. The first beam emitting assembly 140 and the first beam receiving assembly 150 focus on the reflected light path through the first V-shaped reflector 131 to monitor the displacement of the bonding head 110 in a specific direction (such as the X-axis). Similarly, the second beam emitting assembly 140 and the second beam receiving assembly 150 perform high-precision monitoring of the other direction (such as the Y-axis) covered by the second V-shaped reflector 132. The components work together without interfering with each other, accurately capturing minute offsets of the bonding head 110.

[0039] In one possible embodiment of this application, such as Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, the first V-shaped reflector 131 has a first reflecting surface 1311 and a second reflecting surface 1312 that are perpendicular to each other, and the second V-shaped reflector 132 has a third reflecting surface 1321 and a fourth reflecting surface 1322 that are perpendicular to each other. The angles between the first reflecting surface 1311 and the second reflecting surface 1312 and the calibration surface 112 are the same, and the angles between the third reflecting surface 1321 and the fourth reflecting surface 1322 and the calibration surface 112 are the same.

[0040] Specifically, the first reflecting surface 1311 and the second reflecting surface 1312 are perpendicular to each other, and the angles between the first reflecting surface 1311, the second reflecting surface 1312 and the calibration surface 112 are the same. The beam emitted by the first beam emitting assembly 140 is projected onto the first reflecting surface 1311, reflected by the first reflecting surface 1311 to the second reflecting surface 1312, and then reflected by the second reflecting surface 1312 to the first beam receiving assembly 150, thereby ensuring that the emitted beam emitted by the first beam emitting assembly 140 and the received beam received by the first beam receiving assembly 150 are parallel.

[0041] The third reflecting surface 1321 and the fourth reflecting surface 1322 are perpendicular to each other, and the angles between the third reflecting surface 1321, the fourth reflecting surface 1322 and the calibration surface 112 are the same. The beam emitted by the second beam emitting component 140 is projected onto the third reflecting surface 1321, reflected by the third reflecting surface 1321 to the fourth reflecting surface 1322, and then reflected by the fourth reflecting surface 1322 to the second beam receiving component 150, thereby ensuring that the emitted beam emitted by the second beam emitting component 140 and the received beam received by the second beam receiving component 150 are parallel.

[0042] In one possible embodiment of this application, such asFigure 1 , Figure 2 , Figure 3 and Figure 4 As shown, the calibration surface 112 is rectangular, the first reflective surface 1311 and the second reflective surface 1312 are arranged along the long side of the rectangle, and the third reflective surface 1321 and the fourth reflective surface 1322 are arranged along the short side of the rectangle.

[0043] Furthermore, there are four of each of the first V-shaped reflector 131 and the second V-shaped reflector 132, and each of the first V-shaped reflector 131 and the second V-shaped reflector 132 is disposed at the four corners of the calibration surface 112.

[0044] In practical applications, the four-corner reflector layout forms a comprehensive monitoring network. For a high-precision operating component like the bonding head 110, slight offsets may occur at any corner of the plane. The V-shaped reflectors at the four corners simultaneously capture beam reflection information from different directions. Whether the bonding head 110 is offset towards the center, stretched at the edge, or irregularly tilted, it can be sensitively detected by the reflector and the corresponding beam assembly in at least one direction, achieving monitoring without blind spots.

[0045] In one possible embodiment of this application, such as Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, the bonding head 110 is provided with a first mounting slot and a second mounting slot. A first V-shaped reflector 131 is installed through the first mounting slot, and a second V-shaped reflector 132 is installed through the second mounting slot. Ensuring reflector installation accuracy: The precisely designed mounting slots simplify and refine the reflector installation process, eliminating random installation errors caused by manual operation. This ensures high precision in the initial position and angle of the reflector, laying the foundation for long-term stable and accurate optical monitoring and reducing the probability of calibration system failures due to improper installation. Enhancing reflector operational stability: The physical constraints of the mounting slots effectively fix the reflector under complex movement conditions of the bonding head 110, resisting external vibrations and impacts. This ensures that the reflector and bonding head 110 move collaboratively as a whole, maintaining a stable optical path relationship and improving the reliability and durability of the entire calibration mechanism in harsh production environments.

[0046] In one possible embodiment of this application, such as Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, the bonding head 110 is provided with a first V-shaped mounting base and a second V-shaped mounting base. The first V-shaped reflector 131 is mounted through the first V-shaped mounting base, and the second V-shaped reflector 132 is mounted through the second V-shaped mounting base. This ensures the stable fixation of the first V-shaped reflector 131 and the second V-shaped reflector 132.

[0047] In one possible embodiment of the present application, as shown in Figure 1 , Figure 2 , Figure 3 and Figure 4 , a driving mechanism is further included to drive the bonding head 110 to move. In a chip-wafer bonding production line, the driving mechanism is a key component to realize the automatic and high-precision operation of the bonding head 110. It accurately controls the moving track of the bonding head 110 in the three-dimensional space according to the instruction of the control system, and can drive the bonding head 110 to reach the specified position with nanometer-level precision, no matter it is the rapid positioning before bonding, the fine adjustment during bonding, or the reset action after bonding.

[0048] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A bonding head calibration mechanism, characterized in that, The device includes a bonding head and a support platform disposed below the bonding head. A beam emitting component and a beam receiving component are disposed above the bonding head. A mirror group is disposed on the bonding head. The beam emitted by the beam emitting component is reflected at a reference point of the mirror group to the beam receiving component. The emitted beam of the beam emitting component and the received beam of the beam receiving component are parallel. The parallel distance between the emitted beam of the beam emitting component and the received beam of the beam receiving component is a first parallel distance. The remote analysis module calculates the offset of the bonding head based on the difference between the real-time distance between the transmitted beam and the received beam during the change of the distance between the first parallel distance and the bonding head and the carrier stage.

2. The bonding head calibration mechanism according to claim 1, characterized in that, The bonding head has a bonding surface corresponding to the carrier stage and a calibration surface disposed away from the bonding surface, and the mirror assembly is disposed on the calibration surface.

3. The bonding head calibration mechanism according to claim 2, characterized in that, The mirror assembly includes a first V-shaped mirror and a second V-shaped mirror disposed on the calibration surface, wherein the V-grooves of the first V-shaped mirror and the second V-shaped mirror extend perpendicularly to each other.

4. The bonding head calibration mechanism according to claim 3, characterized in that, The beam emitting assembly includes a first beam emitting assembly corresponding to the first V-shaped reflector and a second beam emitting assembly corresponding to the first V-shaped reflector; the beam receiving assembly includes a first beam receiving assembly corresponding to the first V-shaped reflector and a second beam receiving assembly corresponding to the first V-shaped reflector.

5. The bonding head calibration mechanism according to claim 3, characterized in that, The first V-shaped reflector has a first and a second reflecting surface that are perpendicular to each other, and the second V-shaped reflector has a third and a fourth reflecting surface that are perpendicular to each other. The angles between the first and second reflecting surfaces and the calibration surface are the same, and the angles between the third and fourth reflecting surfaces and the calibration surface are also the same.

6. The bonding head calibration mechanism according to claim 5, characterized in that, The calibration surface is rectangular, with the first and second reflective surfaces arranged along the long side of the rectangle, and the third and fourth reflective surfaces arranged along the short side of the rectangle.

7. The bonding head calibration mechanism according to claim 6, characterized in that, Both the first V-shaped reflector and the second V-shaped reflector comprise four of each, and both are positioned at the four corners of the calibration surface.

8. The bonding head calibration mechanism according to claim 3, characterized in that, The bonding head is provided with a first mounting slot and a second mounting slot. The first V-shaped reflector is installed through the first mounting slot, and the second V-shaped reflector is installed through the second mounting slot.

9. The bonding head calibration mechanism according to claim 3, characterized in that, The bonding head is provided with a first V-shaped mounting base and a second V-shaped mounting base. The first V-shaped reflector is mounted through the first V-shaped mounting base, and the second V-shaped reflector is mounted through the second V-shaped mounting base.

10. The bonding head calibration mechanism according to claim 1, characterized in that, It also includes a drive mechanism, which drives the bonding head to move.

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