Compound semiconductor sputtering equipment and semiconductor equipment

Abstract

The utility model discloses compound semiconductor sputtering equipment and semiconductor equipment, and belongs to the technical field of semiconductors. The compound semiconductor sputtering equipment at least comprises a cavity; the at least one first target material is arranged on the first side in the cavity; the at least one second target material is arranged on the second side in the cavity; the at least one reaction gas source is used for introducing at least one reaction gas into the cavity; and the carrying table is arranged on the third side of the cavity, and a substrate is placed on the carrying table. According to the compound semiconductor sputtering equipment and the semiconductor equipment provided by the utility model, a multi-component compound film can be formed through reaction.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the technical field of semiconductor, especially relates to a compound semiconductor sputtering device and semiconductor equipment. BACKGROUND

[0002] When forming a semiconductor thin film using a semiconductor sputtering device, the target material is usually heated so that the atoms or molecules on the surface of the target material have enough energy to be released. Then, the atoms or molecules on the surface of the target are sputtered onto the substrate by ion or neutral ion bombardment, forming a semiconductor thin film.

[0003] However, when forming a semiconductor thin film, factors such as thin film deposition quality, particle defects, deposition efficiency, and compound materials need to be considered simultaneously, so there is still room for improvement in current semiconductor sputtering devices. SUMMARY

[0004] The utility model aims at providing a compound semiconductor sputtering device and semiconductor equipment, which can solve the problem of complex equipment use during deposition and too many variables to control during the reaction process.

[0005] To solve the above technical problems, the utility model is realized by the following technical solutions:

[0006] The utility model provides a deposition chamber, which comprises:

[0007] A cavity;

[0008] At least one first target material is arranged on the first side of the cavity;

[0009] At least one second target material is arranged on the second side of the cavity;

[0010] At least one reaction gas source is arranged to introduce at least one reaction gas into the cavity

[0011] A carrier is arranged on the third side of the cavity, and a substrate is placed on the carrier.

[0012] A cavity;

[0013] At least one first target material is arranged on the first side of the cavity;

[0014] At least one second target material is arranged on the second side of the cavity;

[0015] At least one reaction gas source is arranged to introduce at least one reaction gas into the cavity

[0016] A carrier is arranged on the third side of the cavity, and a substrate is placed on the carrier.

[0017] In an embodiment of the present application, the first target is arranged on the bottom wall in the cavity.

[0018] In an embodiment of the present application, the second target is arranged on the side wall in the cavity.

[0019] In an embodiment of the present application, the carrier is arranged on the top wall of the cavity.

[0020] In an embodiment of the present application, the compound semiconductor sputtering device further comprises a base, and the first target and the second target are arranged on the base.

[0021] In an embodiment of the present application, a first electrode is arranged in the base and laid on the cross section of the base.

[0022] In an embodiment of the present application, a magnetron is arranged in the base and located on part of the cross section of the base.

[0023] In an embodiment of the present application, the compound semiconductor sputtering device further comprises a pre-sputtering window, and the pre-sputtering window is allowed to rotate to the sputtering path from the second target to the substrate.

[0024] In an embodiment of the present application, the compound semiconductor sputtering device further comprises a lifting structure, and the carrier is connected to the top wall of the cavity through the lifting structure.

[0025] The present application further provides a semiconductor device, which at least comprises:

[0026] a transfer cavity; and

[0027] a plurality of growth cavities arranged around the transfer cavity, and at least one of the growth cavities is the compound semiconductor sputtering device according to any one of the above.

[0028] In summary, the compound semiconductor sputtering device and the semiconductor device provided by the present application can realize the sputtering deposition of multi-component compound films by using one reaction cavity, which can avoid the need for complex settings and the formation of a reaction source, thereby solving the problems of complex equipment used in the deposition process and too many variables to be controlled in the reaction process.

[0029] Of course, it is not necessary to achieve all the advantages described above when implementing any product of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed for the embodiment description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained from these drawings without creative labor.

[0031] Figure 1 It is a structural schematic diagram of a semiconductor device in an embodiment.

[0032] Figure 2 It is a structural schematic diagram of a compound semiconductor sputtering device in an embodiment.

[0033] Figure 3 It is a layout schematic diagram of a magnetron in an embodiment.

[0034] Figure 4 It is a layout schematic diagram of a magnetron in another embodiment.

[0035] Figure 5 It is a structural schematic diagram of an electrode assembly in an embodiment.

[0036] Figure 6 It is a structural schematic diagram of an electrode assembly and a dielectric layer in an embodiment.

[0037] Figure 7 It is a structural schematic diagram of an anode sheet in an embodiment.

[0038] Figure 8 It is a structural schematic diagram of an electrostatic chuck in an embodiment.

[0039] Figure 9 It is a structural schematic diagram of an electrode assembly and a substrate in an electrostatic chuck in an embodiment.

[0040] Figure 10 It is a distribution schematic diagram of a positive electrode sheet and a negative electrode sheet on a chuck in an embodiment.

[0041] Figure 11 It is a structural schematic diagram of a base in an electrostatic chuck in an embodiment. DETAILED DESCRIPTION

[0042] The embodiments of the present application will be described in detail through specific concrete examples. Those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in the present specification. The present application can also be implemented or applied through other different specific embodiments, and each detail in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present application.

[0043] It needs to be explained that the diagram provided in the embodiment only illustrates the basic concept of the utility model in a schematic way, only the components related to the utility model are shown in the diagram, and the diagram is not drawn according to the number, shape and size of the components in actual implementation, the type, number and proportion of each component in actual implementation can be changed at will, and the component layout type can be more complex.

[0044] In the utility model, it needs to be explained that if the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like appear, the indicated orientation or position relationship is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the application and simplifying the description, and does not indicate or imply that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the application. In addition, if the terms "first" and "second" appear, they are only used for description and differentiation purposes, and cannot be understood as indicating or implying relative importance.

[0045] Please refer to Figure 1 As shown in the drawings, the semiconductor equipment 100 provided in the application can complete the transmission of wafers and the deposition of various common semiconductor films. In an embodiment of the utility model, the semiconductor equipment 100 can include a physical vapor deposition equipment, a chemical vapor deposition equipment, an atomic layer deposition (ALD) equipment, a transfer equipment and / or a combined system of other semiconductor equipment 100, forming a semiconductor equipment system.

[0046] Please refer to Figure 1 As shown in the drawings, in an embodiment of the utility model, the semiconductor equipment 100 is provided with a plurality of chambers. Specifically, the semiconductor equipment 100 can include a transfer chamber and a plurality of growth chambers arranged around the transfer chamber. The growth chamber can be a physical vapor deposition chamber, a chemical vapor deposition chamber, an atomic layer deposition (ALD) growth chamber or other deposition working chamber. The number of transfer chambers and growth chambers can be set according to requirements.

[0047] Please refer to Figure 1As shown in the utility model one embodiment, the semiconductor equipment 100 includes two transfer cavities, namely a first transfer cavity 101 and a second transfer cavity 102, and the first transfer cavity 101 and the second transfer cavity 102 are communicated through a connecting channel 103. The growth cavity arranged around the first transfer cavity 101 is, for example, a plasma sputtering cavity 104, to realize physical deposition of semiconductor thin film on a wafer. The second transfer cavity 102 is communicated with the first transfer cavity 101 through two connecting channels 103, one of which is used as a transfer path from the first transfer cavity 101 to the second transfer cavity 102, and the other is used as a transfer path from the second transfer cavity 102 to the first transfer cavity 101. The growth cavity arranged around the second transfer cavity 102 is, for example, a compound deposition cavity 105, to realize chemical deposition of semiconductor thin film on a wafer. The compound deposition cavity 105 may, for example, include an aluminum nitride deposition cavity, an N-type gallium nitride deposition cavity, a P-type gallium nitride deposition cavity and an aluminum gallium nitride deposition cavity. In other embodiments, according to actual needs, a third transfer cavity and a fourth transfer cavity or more transfer cavities can be arranged in the semiconductor equipment 100, and two adjacent cavities are communicated through two connecting channels.

[0048] It should be noted that in some embodiments, a cleaning cavity or a preheating cavity or other auxiliary cavities can also be arranged around the transfer cavity to realize cleaning or preheating of the semiconductor structure. In other embodiments, a mechanical arm is arranged in the transfer cavity to realize the flow of the wafer in each growth cavity or adjacent transfer cavity.

[0049] Please refer to Figure 1 As shown in the utility model one embodiment, an inlet 106 and an outlet 107 are arranged at the inlet of the transfer cavity for wafer entry and exit. In this embodiment, the first transfer cavity 101 is used as the transfer cavity for wafer entry and exit, that is, the inlet 106 and the outlet 107 are arranged at the inlet of the first transfer cavity 101. The wafer enters the transfer cavity from the inlet 106 and is transferred out of the transfer cavity from the outlet 107. In all transfer cavities, a transfer station 108 is arranged to communicate with other semiconductor equipment 100. The wafer is transferred from the transfer station 108 before entering other semiconductor equipment 100, to avoid mutual contamination between adjacent semiconductor equipment 100.

[0050] It should be noted that in other embodiments, the transfer cavity for wafer entry and exit can also be the second transfer cavity, the third transfer cavity or the fourth transfer cavity or other transfer cavities, and the inlet and the outlet are arranged at the inlet of the other transfer cavities.

[0051] Please refer to Figure 1As shown, in one embodiment of this utility model, a transition cavity (not shown in the figure) may also be provided at the inlet of the first transfer cavity 101. The transition cavity is located between the external environment and the transfer cavity, and can provide a vacuum space. A wafer loading device is provided at the inlet of the transition cavity, and each wafer loading device may be provided with one, two or more wafer carriers to realize the loading of one, two or more wafers.

[0052] Please see Figure 1 and Figure 2 As shown, in one embodiment of this utility model, a growth cavity surrounding the transfer cavity is a semiconductor sputtering device 200, which can realize the fabrication of binary compound, ternary compound, quaternary compound or other multi-component compound thin films.

[0053] For details, please refer to Figure 2 As shown, in one embodiment of this utility model, a semiconductor sputtering apparatus 200 includes a cavity 201, a first target 202 disposed within the cavity 201, a second target 203 disposed within the cavity 201, a reaction gas source 204 introduced into the cavity 201, and a stage 205. The first target 202 is disposed on a first side within the cavity 201, the second target 203 is disposed on a second side within the cavity 201, and the stage 205 is disposed on a third side within the cavity 201. A substrate 206 is disposed on the stage 205. The first side, second side, and third side represent different positions within the cavity 201, allowing the first target 202 on the first side and the second target 203 on the second side to be sputtered onto the surface of the substrate 206 on the stage 205 on the third side.

[0054] It should be noted that this application does not limit the number and location of the target material and the reactive gas source. This embodiment is illustrated by setting one first target material and one second target material in the cavity. In other embodiments, two or more first targets and two or more second targets may be set in the cavity, so that the ions of the target material can be sputtered onto the substrate, and the reactive gas source can also be set according to requirements.

[0055] Please see Figure 2 As shown, in one embodiment of this utility model, the cavity 201 is made of a high-temperature resistant material, specifically an alloy or other high-temperature resistant material, so that the cavity 201 can withstand temperatures of, for example, 1200°C or higher.

[0056] Please see Figure 2As shown in the utility model one embodiment, the first target material 202 is liquid target material at normal temperature, and the first target material 202 is arranged on the bottom wall inside the cavity 201, to ensure that the liquid target material is placed stably.In other embodiments, if the first target material 202 is non-liquid target material, the first target material 202 can also be arranged on the side wall inside the cavity 201, or the first target material 202 is placed obliquely at the junction of the bottom wall and the side wall inside the cavity 201, or the first target material 202 is placed obliquely at the junction of the top wall and the side wall inside the cavity 201.

[0057] Please refer to Figure 2 As shown in the utility model one embodiment, the first base 207 is arranged on the bottom wall of the cavity 201, and the first target material 202 is placed on the surface of the first base 207.The diameter of the first target material 202 is, for example, 150mm-400mm, and in the embodiment, the first target material 202 is, for example, gallium.Gallium is in liquid state at normal temperature.The semiconductor sputtering device 200 provided in the embodiment can realize the preparation of gallium-containing compounds, wherein the purity of gallium is greater than or equal to 99.999%.

[0058] Please refer to Figure 2 As shown in the utility model one embodiment, the first electrode 208 is arranged in the first base 207, and the first electrode 208 is, for example, a cathode.An electric field is formed between the first electrode 208 and the anode arranged on the carrier 205, so that the electrons move in the direction of the carrier 205.In the embodiment, to increase the uniformity and intensity of the electric field between the first base 207 and the carrier 205, the first electrode 208 is laid on the cross section of the first base 207.The orthographic projection of the first electrode 208 in the first base 207 on the surface of the first base 207 coincides with the first target material 202, so that the electrons can be constrained between the minimum range electric field between the first base 207 and the carrier 205, to increase the sputtering efficiency of ions.The diameter of the first electrode 208 in the first base 207 is the same as that of the first target material 202, and is, for example, 150mm-400mm.

[0059] Please refer to Figure 2 As shown in the utility model one embodiment, the magnetron 209 is also arranged in the first base 207.The plane where the magnetron 209 is arranged is parallel to the plane where the first electrode 208 is arranged.In the embodiment, the first base 207 is arranged in a cylindrical shape, and the cross section of the first base 207 is circular.Combined with Figure 3 and Figure 4As shown, the magnetron 209 is located in a sector section of the first base 207, with the center of the sector section being the center of the first base 207 and the radius of the sector section being any length greater than 0. In the sector section, the magnetron 209 is arranged in an S shape, or the magnetron 209 covers the sector section. When the first base 207 rotates around the center of the first base 207 under the driving of the direct current power supply 211, the first magnetron rotates accordingly, and the magnetic field generated thereby is parallel to the cross section of the first base 207. Compared with covering the cross section of the first base 207 with the magnetron 209, arranging the magnetron 209 in the sector section of the first base 207 and rotating the first base 207 to generate the magnetic field can make the magnetic field more uniform, thereby improving the uniformity of the thin film formed on the substrate 206. In some embodiments, the position and / or number of the magnetron 209 can be adjusted to correspond to the adjustment of the magnetic field in the cavity.

[0060] As shown in FIG. 1, the semiconductor sputtering device 200 comprises a cavity 201, a first base 207, a second base 202, a first electrode 208, a second electrode 204, a first target material 205, a second target material 203, a substrate 206, a magnetron 209, a cooling water circuit 210, a direct current (DC) power supply 211, and a radio frequency (RF) power supply 212. Figure 2 As shown in the embodiment of the utility model, the cooling water circuit 210 is further arranged in the first base 207, and cooling water flows in the cooling water circuit 210 to ensure that the temperature of the first base 207 and the device on the first base 207 is stable within a certain range. In this embodiment, the temperature of the cooling water is, for example, 18 DEG C to 20 DEG C.

[0061] As shown in FIG. 1, the semiconductor sputtering device 200 comprises a cavity 201, a first base 207, a second base 202, a first electrode 208, a second electrode 204, a first target material 205, a second target material 203, a substrate 206, a magnetron 209, a cooling water circuit 210, a direct current (DC) power supply 211, and a radio frequency (RF) power supply 212. Figure 2 As shown in the embodiment of the utility model, the direct current power supply 211 and the radio frequency power supply 212 are further arranged in the semiconductor sputtering device 200, and the direct current power supply 211 and the radio frequency power supply 212 are electrically connected to the first electrode 208 to provide power supply and bias for the first electrode 208, so as to adjust the electric field and further adjust the ion sputtering path. The direct current power supply 211 and the radio frequency power supply 212 can be arranged outside the cavity 201 and are electrically connected to the first electrode 208 in the cavity 201. The maximum power of the direct current power supply 211 is, for example, 15000W, and the maximum power of the radio frequency power supply 212 is, for example, 8000W. In operation, the specific power of the direct current power supply 211 and the radio frequency power supply 212 can be adjusted according to actual needs.

[0062] As shown in FIG. 1, the semiconductor sputtering device 200 comprises a cavity 201, a first base 207, a second base 202, a first electrode 208, a second electrode 204, a first target material 205, a second target material 203, a substrate 206, a magnetron 209, a cooling water circuit 210, a direct current (DC) power supply 211, and a radio frequency (RF) power supply 212. Figure 2 As shown in the embodiment of the utility model, the second target material 203 is a solid target material at room temperature, and the second target material 203 is arranged on the side wall in the cavity 201. In other embodiments, the second target material 203 can also be arranged on the bottom wall in the cavity 201, or the second target material 203 is arranged obliquely at the connection between the bottom wall and the side wall in the cavity 201, or the second target material 203 is arranged obliquely at the connection between the top wall and the side wall in the cavity 201.

[0063] Referring to Figure 2 As shown in the utility model one embodiment, to realize the fixed of second target material 203, in the cavity 201 inside the side wall still is provided with second pedestal 213. Second pedestal 213 is fixed in the side wall of cavity 201, and second target material 203 is fixed on the surface of second pedestal 213. The diameter of second target material 203 is for example 50mm~300mm, in this embodiment, first target material 202 is for example aluminum. Among them, the purity of aluminum is greater than or equal to 99.999%.

[0064] Referring to Figure 2 As shown in the utility model one embodiment, in second target material 203, it is provided with first electrode 208, and first electrode 208 is for example cathode, and the anode formed on the stage 205 forms electric field, and then makes the electron movement to the direction of stage 205. In this embodiment, first electrode 208 is laid on the cross section of second pedestal 213. The orthographic projection of first electrode 208 in second pedestal 213 on the surface of second pedestal 213 coincides with second target material 203, can be confined between the minimum range electric field between second pedestal 213 and stage 205, and then increase the sputtering efficiency of ion. That is, the diameter of first electrode 208 in second pedestal 213 is same with second target material 203, and for example 50mm~300mm.

[0065] Referring to Figure 2 As shown in the utility model one embodiment, in second pedestal 213, it is also provided with magnetron 209. Magnetron 209 is arranged in second pedestal 213, and the plane where magnetron 209 is arranged is parallel to the plane where first electrode 208 is arranged. In this embodiment, second pedestal 213 is arranged in a cylindrical shape, and the cross section of second pedestal 213 is circular. In combination with Figure 3 And Figure 4 As shown in the utility model one embodiment, magnetron 209 is located in the sector section with the center of second pedestal 213 as the center and any length greater than 0 as the radius, and the central angle of the sector section is greater than zero. In the sector section, magnetron 209 is arranged in an S shape, or magnetron 209 covers the sector section. When second pedestal 213 rotates around the center of second pedestal 213 under the drive of direct current power supply 211, second magnetron rotates accordingly, and the magnetic field generated thereby is parallel to the cross section of second pedestal 213. Compared with the case where magnetron 209 covers the cross section of second pedestal 213, the magnetic field generated by rotating second pedestal 213 will be more uniform when magnetron 209 is arranged in the sector section of second pedestal 213, thereby improving the uniformity of the film formed on substrate 206.

[0066] Referring to Figure 2As shown in the utility model one embodiment, semiconductor sputtering equipment 200 still be provided with direct current source 211 and radio frequency power supply 212 that electrically connected to second first electrode 208, direct current source 211 and radio frequency power supply 212 provide power supply and bias for first electrode 208, to realize the adjustment of electric field, and then adjust the path of ion sputtering. Wherein, the maximum power of direct current source 211 is for example 15000W, the maximum power of radio frequency power supply 212 is for example 8000W. When working, the specific power of direct current source 211 and radio frequency power supply 212 can be adjusted according to actual demand.

[0067] Please refer to Figure 2 As shown in the utility model one embodiment, in second base 213 still be provided with cooling water circuit 210, cooling water circuit 210 is provided with flowing cooling water, to ensure that the temperature of second base 213 and the device on second base 213 is stable within a certain range. In this embodiment, the temperature of cooling water is for example 18~20 DEG C.

[0068] Please refer to Figure 2 As shown in the utility model one embodiment, in semiconductor sputtering equipment 200 still be provided with pre-sputtering window 214, pre-sputtering window 214 is fixed on the side wall inside cavity 201 through first connecting rod 214. Specifically, pre-sputtering window 214 is fixed on motor 215 inside cavity 201 through first connecting rod 214, motor 215 is fixed on the side wall inside cavity 201, and motor 215 is close to second base 213. One end of first connecting rod 214 is fixedly connected to the output end of motor 215, when motor 215 rotates, first connecting rod 214 rotates with motor 215. The other end of first connecting rod 214 is fixedly connected with pre-sputtering window 214. And pre-sputtering window 214 is plate-shaped, and the orthographic projection of pre-sputtering window 214 on second target material 203 covers second target material 203. In this embodiment, pre-sputtering window 214 is circular plate-shaped, and the diameter of pre-sputtering window 214 is greater than the diameter of second target material 203, and the diameter of pre-sputtering window 214 is for example 70mm~330mm.

[0069] Please refer to Figure 2As shown, in an embodiment of the present application, when the first connecting rod 214 rotates with the motor 215, the pre-sputtering window 214 also rotates with the first connecting rod 214. When the pre-sputtering window 214 rotates with the first connecting rod 214, the pre-sputtering window 214 is allowed to cut off the sputtering path of the second target material 203 to the substrate 206, so that the ions generated by the second target material 203 are sputtered onto the pre-sputtering window 214. Therefore, between each sputtering, the motor 215 is driven to rotate, so that the pre-sputtering window 214 fixed on the first connecting rod 214 is rotated to the sputtering path of the second target material 203 to the substrate 206, at this time, the ions generated by the second target material 203 are sputtered onto the pre-sputtering window 214. When the sputtering of the oxidized substance on the surface of the second target material 203 is completed, the motor 215 is driven to rotate again, so that the pre-sputtering window 214 fixed on the first connecting rod 214 is rotated to a position away from the sputtering path, and the ions generated by the second target material 203 can be sputtered along the sputtering path to the surface of the substrate 206.

[0070] As shown in the drawings, Figure 2 As shown, in the embodiment of the present application, two target materials are arranged inside the cavity. In other embodiments, two or more first target materials 202 in liquid state at room temperature can also be arranged on the bottom wall of the cavity, and two or more second target materials 203 in solid state at room temperature can also be arranged on the side wall, bottom wall or top wall of the cavity.

[0071] As shown in the drawings, Figure 2 As shown, in an embodiment of the present application, a loading table 205 is arranged on the top wall inside the cavity 201. The substrate 206 is placed on the surface of the loading table 205. The substrate 206 can be fixed on the loading table 205 by structure clamping, electrostatic attraction or other arbitrary fixing methods. The loading table 205 is fixed on the top wall inside the cavity 201 by the lifting structure 216. The distance between the substrate 206 fixed on the loading table 205 and the top wall can be adjusted by the lifting structure 216, so as to adjust the distance between the substrate 206 and the target material. In some embodiments, the lifting structure 216 can also rotate, when the lifting structure 216 rotates, the loading table 205 rotates around the center, so that the substrate 206 on the loading table 205 rotates, and the deposited compound film is more uniform.

[0072] As shown in the drawings, Figure 2 As shown, in an embodiment of the present application, a heating base 217 is arranged on the top wall inside the cavity 201. The heating base 217 is located on the side of the loading table 205 away from the substrate 206, and an electric circuit is arranged in the heating base 217 to adjust the temperature of the heating base 217, so as to adjust the temperature of the substrate 206 and realize the heating of the substrate 206. In the embodiment, the heating base 217 is in a cylindrical shape, and the diameter of the heating base 217 is for example 250mm-350mm. One, two or more substrates 206 can be arranged on the surface of the heating base 2052.

[0073] In different embodiments, the growth temperature (substrate wafer temperature) in the cavity 201 can be greater than 650°C, for example 650°C ~ 1900°C. The substrate to be plated in the cavity 201 can be sapphire, silicon, silicon carbide, aluminum nitride or other substrates, wafers, and the size of the substrate to be plated in the cavity 201 can be, for example, 2 inches, 4 inches, 6 inches and / or 8 inches.

[0074] Please refer to Figure 2 As shown in the embodiment of the utility model, a second electrode 218 is further arranged on the top wall in the cavity 201, the second electrode 218 is a positive electrode, and forms an electric field with the first electrode 208 arranged in the first base 207 and the second base 213. The electrons move from the first target material 202 and the second target material 203 to the substrate 206 along the electric field, collide with the inert gas atoms, generate inert gas positive ions and new electrons, the new electrons move to the substrate 206, and the generated inert gas ions bombard the first target material 202 and the second target material 203 under the action of the electric field, so that the target material is sputtered.

[0075] Please refer to Figure 2 As shown in the embodiment, the range of the straight line distance from the center of the first target material 202 to the center of the substrate 206 is, for example, 10cm ~ 17cm, that is, the range of the straight line distance from the center of the gallium target material to the center of the substrate 206 is, for example, 10cm ~ 17cm. The range of the straight line distance from the center of the second target material 203 to the center of the substrate 206 is, for example, 10cm ~ 12cm, that is, the range of the straight line distance from the center of the aluminum target material to the center of the substrate 206 is, for example, 10cm ~ 12cm. By limiting the straight line distance from the center of the gallium target material to the center of the substrate 206 and the straight line distance from the center of the aluminum target material to the center of the substrate 206, it can be avoided that the distance between the target material and the substrate 206 is too small, so that the ions sputtered by the two target materials cannot react in a shorter path, and thus a compound thin film cannot be formed on the surface of the substrate 206. It can also be avoided that the distance between the target material and the substrate 206 is too large, so that the ions sputtered by the two target materials react and combine together in a longer path, and thus a granular protrusion is formed on the surface of the substrate 206, affecting the quality of the formed compound thin film.

[0076] Please refer to Figure 2 As shown in the embodiment of the utility model, an air inlet pipe 219 is further arranged in the semiconductor sputtering device 200, the air inlet pipe 219 communicates the external gas source body and the cavity 201, and realizes the supply of the inert gas and the reaction gas in the cavity 201. Among them, the external gas source includes an inert gas source and a reaction gas source 204. Before the reaction, the inert gas is introduced by using the air inlet pipe 219, so that the inside of the cavity 201 is close to vacuum. At this time, the pressure in the cavity 201 can be less than 10 -6Pa, for example, is 10 -7 Pa. When the reaction forms a compound film, the inlet pipe 219 is used to introduce the reaction gas, and the reaction gas is introduced into the cavity 201 to react with the ions sputtered from the target to form a compound film on the surface of the substrate 206. When the reaction gas is introduced into the cavity 201, the working pressure in the cavity 201 is set to 0.6 Pa to 1.2 Pa.

[0077] Please refer to Figure 2 As shown in the embodiment of the utility model, the inlet pipe 219 is arranged around the loading platform 205, and the inlet pipe 219 can form multiple gas rings, and the multiple gas rings are arranged side by side in the lifting direction of the loading platform 205. The diameter of the gas ring formed by the inlet pipe 219 is greater than the diameter of the loading platform 205, for example, the diameter of the gas ring formed by the inlet pipe 219 is 150 mm to 600 mm. On the side of each gas ring close to the substrate 206, multiple openings (not shown in the figure) are arranged, and the spacing between adjacent openings is equal, so that the openings are uniformly distributed on the gas ring. At this time, the inert gas or reaction gas introduced through the inlet pipe 219 can be more uniformly introduced into the chamber.

[0078] Please refer to Figure 2 As shown in the embodiment of the utility model, the type of the inert gas source and the reaction gas source 204 is not limited, and the inert gas source and the reaction gas source 204 can be introduced according to the compound film formed as needed. In this embodiment, the inert gas introduced into the cavity 201 is, for example, argon, and the reaction gas introduced into the cavity 201 is, for example, nitrogen. In combination with the materials of the first target 202 and the second target 203, an aluminum gallium nitride film can be formed on the substrate 206 in this embodiment. In other embodiments, the materials of the targets and the types of the introduced gases can be adjusted to form other compound films.

[0079] Please refer to Figure 2 As shown in the embodiment of the utility model, an air outlet 220 is further arranged in the chamber, the air outlet 220 is arranged on the side wall of the chamber, and the air outlet 220 is located on the side of the chamber close to the bottom wall. The air outlet 220 is connected with a power device 221, and the power device 221 can extract the gas in the chamber through the air outlet 220. A cover plate 222 is arranged on one side of the air outlet 220, and the cover plate 222 is movably connected to one side of the air outlet 220. The cover plate 222 is connected with a motor 224 through a second connecting rod 223. When the motor 224 rotates, the cover plate 222 is allowed to cover the air outlet 220. At the same time, when the motor 224 rotates, the cover plate 222 is also allowed to expose the air outlet 220.

[0080] Please refer to Figure 5 and Figure 5As shown, in one embodiment of this utility model, the stage 205 fixes the substrate 206 onto the stage 205 by electrostatic attraction. Correspondingly, an electrode assembly 300 is provided in the stage 205. The electrode assembly 300 is located on the side close to the surface of the stage 205 and can provide a large attraction force, so that the substrate 206 is fixed to the surface of the stage 205 by electrostatic attraction.

[0081] Please see Figure 6 and Figure 5 As shown, in one embodiment of this utility model, the electrode assembly 300 includes a positive electrode 301 and a negative electrode 302, which are stacked. An insulating dielectric layer 303 is disposed between the positive electrode 301 and the negative electrode 302, and on opposite sides of the positive electrode 301 and the negative electrode 302. The three insulating dielectric layers 303 enclose the positive electrode 301 and the negative electrode 302. A dielectric layer 304 is disposed on the insulating dielectric layer 303 on the side of the positive electrode 301 away from the negative electrode 302. The insulating dielectric layer 303 is the surface of the stage 205, so the substrate 206 is adsorbed onto the dielectric layer. When the substrate 206 is placed on the stage 205, connecting the positive electrode 301 to the positive terminal of the power supply, or connecting the negative electrode 302 to the negative terminal of the power supply, can create an electric field between the positive electrode 301 or the negative electrode 302, and the dielectric layer 304. Meanwhile, by connecting the positive electrode 301 to the positive terminal of the power supply and the negative electrode 302 to the negative terminal of the power supply, the charge can be released after free charges are generated in the dielectric layer 304, allowing for faster and more stable desorption processing.

[0082] Please see Figure 7 and Figure 5As shown in the utility model one embodiment, the negative plate 302 is set in a sheet shape, and the cross section of the negative plate 302 is set in a rectangular shape. The positive plate 301 comprises a plurality of first positive strips 3011 arranged side by side, and equal spacing is arranged between adjacent first positive strips 3011. One end of the plurality of first positive strips 3011 is connected through a second positive strip 3012. The positive plate 301 formed by the plurality of first positive strips 3011 with spacing makes the adsorption force of the stage 205 larger when the substrate 206 is within the adsorption range of the stage 205 (for example, the distance between the substrate 206 and the surface of the stage 205 is less than 0.05mm), and the adsorption force of the stage 205 is very small when the substrate 206 is away from the surface of the stage 205 by a preset distance (for example, the distance between the substrate 206 and the surface of the stage 205 is greater than 1mm). At this time, when the substrate 206 is placed on the stage 205, the stage 205 firmly fixes the substrate 206 by adsorption force, and when the substrate 206 is removed from the stage 205, the substrate 206 is easily peeled off from the stage 205 as long as the preset distance from the stage 205. In this embodiment, the positive plate 301 is for example a positive plate 301 arranged in a comb shape. In other embodiments, the first positive strip 3011 can be bent and deformed to form a positive plate 301 of other shapes, such as a fan shape, a wave shape, etc. The second positive strip 3012 realizes the connection of the plurality of first positive strips 3011.

[0083] Please refer to Figure 6 and Figure 8 As shown in the utility model one embodiment, in order to enhance the space electric field between the positive plate 301 and the negative plate 302, the cross section of the positive plate 301 is provided with a plurality of protrusions 3013, and the spacing between the plurality of protrusions 3013 is equal. That is, the cross section of the first positive strip 3011 is provided with a plurality of protrusions 3013. Specifically, in this embodiment, the cross section of the positive plate 301 is provided with for example 4 protrusions 3013, and the cross section of the positive plate 301 is set in a cross shape. In other embodiments, the cross section of the positive plate 301 can be provided with for example 6 protrusions 3013 or 8 protrusions 3013, etc. The cross section of the positive plate 301 is provided with a plurality of protrusions 3013, which enhances the space electric field and increases the adsorption force, so that the adsorption can be better controlled at a certain voltage. By providing the cross section of the positive plate 301 with a plurality of protrusions 3013, the uniformity of the electric field is changed, and compared with the cross section of the positive plate 301 set in a rectangular shape, the adsorption force of the cross section of the positive plate 301 provided with a plurality of protrusions 3013 is more uniform, and the plate is not easy to break.

[0084] Please refer to Figure 8As shown in the utility model one embodiment, the carrier 205 includes chuck 2051, base 2052 and multiple fixing members 2053. Among them, the chuck 2051 includes base material 305 and electrode assembly 300 arranged on the base material 305, and the base 2052 is connected with the chuck 2051. Multiple fixing members 2053 cooperate with each other to fix the chuck 2051 and the base 2052 together.

[0085] Specifically, please refer to Figure 9 , Figure 10 and Figure 8 As shown in the utility model one embodiment, the base material 305 is circularly arranged, the electrode assembly 300 is arranged on the base material 305, and the negative plate 302 contact point is arranged from the center of the base material 305. The positive plate 301 is curved and arranged in a ring shape, that is, multiple first positive strips 3011 are curved and arranged in a circular ring shape, and multiple second positive strips 3012 are used to connect the first positive strips 3011. Multiple second positive strips 3012 form a cross shape. The positive plate contact point can be arranged at the edge of the base material 305, and the negative plate contact point can be arranged at the center of the base material 305. At the bottom of the base material 305, a recessed plug 3051 is arranged. The negative plate contact point and the positive plate contact point are electrically connected to the recessed plug 3051 and connected to the outside through the recessed plug 3051.

[0086] Please refer to Figure 9 , Figure 10 , Figure 11 and Figure 8 As shown in the utility model one embodiment, the base 2052 is provided with a protruding plug 3081, and the protruding plug 3081 is matched with the recessed plug 3051, allowing the protruding plug 3081 to be inserted into the recessed plug 3051, thereby realizing power supply of the electrode assembly 300. In the base 2052, an airflow layer 308, a heating layer 307 and a cooling layer 306 are further arranged. The airflow layer 308 is arranged on the heating layer 307, the heating layer 307 is used to heat the airflow layer 308, and the preheating function of the carrier 205 is realized. The airflow layer 308 is provided with an airflow circuit, and heated airflow can be introduced into the airflow circuit as the main medium for heating. The cooling layer 306 is arranged on the side of the heating layer 307 away from the airflow layer 308, and the cooling layer 306 is provided with a cooling circuit, which can quickly cool the heating layer 307 when heating is not required.

[0087] Please refer to Figure 8 As shown in the utility model one embodiment, the fixing member 2053 includes multiple buckles, and the multiple buckles on both sides of the chuck 2051 and the base 2052 are buckled to each other to fix the chuck 2051 and the base 2052 together. The multiple buckles can be connected by mortise and tenon structure or other structures such as bolts.

[0088] Please refer to ​As shown in the embodiment of the utility model, the pressure sensor (not shown in the figure) can also be arranged on the clamping ring close to the surface of the chuck 2051. When the pressure sensor senses that the substrate 206 on the chuck 2051 has been adsorbed, the clamping ring can fall down for secondary fixation to prevent accidents. If the pressure does not change significantly when the substrate 206 just enters the chuck 2051, an alarm is given to avoid problems in adsorption.

[0089] In one embodiment, the growth rate of the thin film is, for example, 0.1 nm / s-1.5 nm / s, and for example, 0.3 nm / s-1.2 nm / s, by the apparatus of the present application. In one embodiment, the full width at half maximum (FWHM) in the (002) direction of the thin film (e.g., AlN, GaN or other thin film) with a thickness of 1.1 um-200 nm can be less than or equal to 1°, and for example, less than or equal to 0.7°. In one embodiment, the full width at half maximum (FWHM) in the (002) direction of the thin film (e.g., AlN, GaN or other thin film) with a thickness of 150 nm-210 nm can be less than or equal to 1.5°, and for example, less than or equal to 0.9°. In one embodiment, the full width at half maximum (FWHM) in the (002) direction of the thin film (e.g., AlN, GaN or other thin film) with a thickness of 50 nm-100 nm can be less than or equal to 0.5°, and for example, less than or equal to 0.1°. In addition, the uniformity RMS value of the thin film can be less than or equal to 1 nm, and for example, less than or equal to 0.7 nm, and the number of particle defects (particle > 0.3 um) on the thin film can be, for example, 50-150, by the apparatus of the present application.

[0090] In different embodiments, the temperature inside the cavity can be detected, and the temperature of the components inside the cavity can be controlled according to the detected temperature, so that excessive temperature difference does not occur in the high-temperature environment inside the reaction chamber, thereby reducing the particle problem. For example, during the growth process, the working temperature of the substrate can be lower than the working temperature of the target material.

[0091] In one embodiment, the shielding member inside the reaction chamber can be connected to the potential of the cavity to reduce the arc, thereby reducing the generation of particle defects.

[0092] In one embodiment, when the apparatus of the present application is a multi-target material system, the grown thin film can be, for example, AlGaN, AlScN, P-type GaN, N-type GaN or other material thin film.

[0093] In one embodiment, the substrate for growing the thin film can be, for example, a deep-width ratio of 1:1-5:1, by the apparatus of the present application.

[0094] The above disclosed embodiments of the utility model are only used for helping to set forth the utility model. The embodiments do not describe all the details exhaustively, and also do not limit the utility model to be only the specific implementation mode. Apparently, according to the content of the specification, many modifications and changes can be made. The specification selects and specifically describes these embodiments, in order to better explain the principle and practical application of the utility model, so that the person skilled in the art can well understand and utilize the utility model. The utility model is limited by the claims and the whole scope and equivalents.

Claims

1. A compound semiconductor sputtering apparatus characterized by comprising: At least comprising: a cavity; at least one first target material disposed on a first side of the cavity; at least one second target material disposed on a second side of the cavity; at least one source of reactive gas for introducing at least one reactive gas into the cavity; a stage disposed on a third side of the cavity, the stage being configured to hold a substrate.

2. The compound semiconductor sputtering apparatus according to claim 1, wherein The first target material is disposed on a bottom wall of the cavity.

3. The compound semiconductor sputtering apparatus according to claim 1, wherein The second target material is disposed on a side wall of the cavity.

4. The compound semiconductor sputtering apparatus according to claim 1, wherein The stage is disposed on a top wall of the cavity.

5. The compound semiconductor sputtering apparatus according to claim 1, wherein The compound semiconductor sputtering apparatus further comprises a base, the first target material and the second target material being disposed on the base.

6. The compound semiconductor sputtering apparatus according to claim 5, wherein The base is provided with a first electrode, the first electrode being disposed on a cross section of the base.

7. The compound semiconductor sputtering apparatus according to claim 5, wherein The base is provided with a magnetron, the magnetron being disposed on a portion of the cross section of the base.

8. The compound semiconductor sputtering apparatus according to claim 1, wherein The compound semiconductor sputtering apparatus further comprises a pre-sputtering window, the pre-sputtering window being rotatable to a sputtering path of the second target material to the substrate.

9. The compound semiconductor sputtering apparatus according to claim 1, wherein The compound semiconductor sputtering apparatus further comprises a lifting structure, the stage being connected to the top wall of the cavity by the lifting structure.

10. A semiconductor device, characterized by comprising: At least comprising: a transfer cavity; and a plurality of growth cavities disposed around the transfer cavity, at least one of the growth cavities being the compound semiconductor sputtering apparatus as claimed in any one of claims 1 to 9.

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