PVD (Physical Vapor Deposition) equipment for preventing back plating of wafer

Abstract

The utility model relates to the technical field of PVD (Physical Vapor Deposition) equipment, in particular to PVD equipment for preventing back plating of a wafer, which comprises a cavity, a target material and a base, the target material and the base are arranged in the cavity, a bearing part is fixedly arranged on a connecting part of the base, a shielding ring is connected above the bearing part through at least two adjusting assemblies, and the shielding ring is connected with the target material through the adjusting assemblies. The shielding ring is arranged on the outer side of the base in a sleeving manner; according to the utility model, the shielding ring is used for realizing bearing and shielding when the wafer is coated, the front surface area of the wafer is not contacted with the base by matching with the adjusting assembly, and meanwhile, the edge of the wafer is contacted with the inner shrinkage part, so that the back coating condition of the front surface of the wafer is effectively prevented, and the service life of the wafer is prolonged. By adopting the equipment, PVD (Physical Vapor Deposition) back plating on the back surface can be avoided, and the number of effective wafers on the front surface can be increased, so that the product quality is ensured while the yield is increased.

Description

TECHNICAL FIELD

[0001] The utility model relates to PVD equipment technical field especially relates to a kind of PVD equipment for preventing wafer back plating. BACKGROUND

[0002] With the development of semiconductor technology, physical vapor deposition (PVD) technology plays an important role in integrated circuit manufacturing. In particular, in the back gold process of 6-inch and 8-inch wafers, the design of the PVD process kit directly affects the quality and production efficiency of the product.

[0003] There is a significant defect in the existing design of 6-inch and 8-inch wafer back gold PVD process kit: during the back gold operation, some metal overspill will be deposited unnecessarily on the front edge of the wafer, with a width of 1-5 mm. This overspill not only affects the appearance of the wafer, but more importantly, it seriously interferes with the regular process flow on the front of the wafer and reduces the number of effective wafers.

[0004] Analysis shows that the main cause of this problem is the defect in the design of the shadow shield in the PVD cavity. Some cavity shield designs use a larger opening diameter, which cannot effectively prevent metal overspill during normal back gold operation, affecting the area up to 5 mm from the edge of the wafer front. This design not only reduces production efficiency, but also increases production cost, as the industry often has to sacrifice some of the effective wafer front to cover this problem. SUMMARY

[0005] The utility model aims at solving the defect of larger opening diameter in the prior art, which cannot effectively prevent metal overspill during normal back gold operation, and proposes a PVD equipment for preventing wafer back plating.

[0006] To achieve the above-mentioned purpose, the utility model adopts the following technical solutions:

[0007] A PVD equipment for preventing wafer back plating is designed, including a chamber, a target material installed in the chamber, and a base:

[0008] A bearing is fixedly installed on the connecting part of the base, and a shielding ring is connected to the upper part of the bearing through at least two adjusting assemblies. The shielding ring is sleeved on the outer side of the base.

[0009] A synchronous assembly is further provided at the bottom of the shielding ring, which is used to keep the at least two adjusting assemblies rotating synchronously.

[0010] Furthermore, the shielding ring includes a main body and an inwardly recessed portion formed on the inner ring of the main body, the inwardly recessed portion being used to support the wafer.

[0011] Furthermore, the adjusting assembly includes a rod rotatably connected to the bottom of the shielding ring, and a threaded section is formed at the bottom end of the rod;

[0012] The end face of the carrier has a threaded hole that is adapted to the threaded segment.

[0013] Furthermore, a locking bolt is threaded onto the outer side of the threaded section, the locking bolt being used to abut against the upper end face of the bearing member.

[0014] Furthermore, two notches are symmetrically provided on the outer side of the rod, and the two notches form a locking part for adapting a wrench.

[0015] Furthermore, the synchronization component is fixedly connected to the gear on the outside of the rod, and a gear ring is rotatably connected to the bottom of the shielding ring, with at least two of the gears meshing on the inner side of the gear ring.

[0016] Furthermore, the inner diameter of the shielding ring is 147mm, and the distance between the bottom of the shielding ring and the surface of the base is 1.5mm.

[0017] The present invention provides a PVD device for preventing back-plating of wafers. The advantages of this device are as follows: the shielding ring is used to support and shield the wafer during the plating process. With the adjustment component, the front area of ​​the wafer can be kept from contacting the substrate. At the same time, the wafer contacts the inward-recessed part at the edge, which effectively prevents back-plating from occurring on the front of the wafer. Using this device can eliminate back-plating of PVD on the back and increase the number of effective wafers on the front, thereby increasing production while ensuring product quality. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of this utility model;

[0019] Figure 2 This is a schematic diagram of the shielding ring structure of this utility model;

[0020] Figure 3 This is a schematic diagram of the synchronization component structure of this utility model;

[0021] Figure 4 A schematic diagram showing the back plating values ​​for different inner diameters of the shielding ring openings.

[0022] In the figure: 1. Chamber; 2. Target material; 3. Base; 4. Bearing component; 5. Adjustment component; 51. Rod; 52. Threaded section; 53. Locking bolt; 54. Notch; 6. Shielding ring; 61. Main body; 62. Inner section; 7. Synchronization component; 71. Gear; 72. Gear ring. Detailed Implementation

[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.

[0024] Reference Figures 1-4 As one embodiment of this utility model, a PVD device for preventing wafer back-plating is disclosed. Specifically, the device includes a chamber 1 and a target 2 and a base 3 installed in the chamber 1. It also includes a vacuum device and a gas supply device, etc. The specific connection method is conventional for those skilled in the art and will not be described in detail here.

[0025] Furthermore, in this embodiment, a support member 4 is fixedly installed on the connecting part of the base 3, and a shielding ring 6 is connected above the support member 4 through at least two adjusting components 5. The shielding ring 6 is sleeved on the outside of the base 3.

[0026] A synchronization component 7 is also provided at the bottom of the shielding ring 6, which is used to keep at least two of the adjustment components 5 rotating synchronously.

[0027] In some embodiments, the shielding ring 6 of this invention includes a main body 61 and an inwardly recessed portion 62 formed on the inner ring of the main body 61. The inwardly recessed portion 62 is used to support the wafer. The shielding ring 6 is generally ring-shaped, and the inwardly recessed portion 62 is formed on its inner ring side and recessed downward to support the wafer. Furthermore, the other part of the main body 61 is used to shield the wafer during coating. With the adjustment component 5, the front area of ​​the wafer can be kept out of contact with the base 3, while the wafer contacts the inwardly recessed portion 62 at the edge, effectively preventing back coating from occurring on the front of the wafer.

[0028] Based on the above embodiments, the adjustment component 5 in this embodiment includes a rod 51 rotatably connected to the bottom of the shielding ring 6. A threaded section 52 is formed at the bottom end of the rod 51. The diameter of the threaded section 52 is smaller than the diameter of the rod 51, so that a stepped portion can be formed at the bottom of the rod 51 for stopping the screwing of the rod 51.

[0029] The end face of the bearing member 4 has a threaded hole that matches the threaded section 52. Specifically, in this embodiment, there are two adjusting components 5, that is, two rods 51 and two threaded holes are arranged opposite each other, and the two rods 51 are circumferentially distributed.

[0030] Furthermore, in this embodiment, a locking bolt 53 is threadedly connected to the outside of the threaded section 52. The locking bolt 53 is used to abut against the upper end face of the bearing member 4. In this embodiment, the locking bolt 53 is designed to lock and fix the rod 51 after the height is adjusted. Specifically, during adjustment, the locking bolt 53 is first loosened, and then the rod 51 is rotated. When the rod 51 is adjusted to the predetermined height of the shielding ring 6, the locking bolt 53 is reset so that it abuts against the top of the bearing member 4, thereby achieving the locking and fixing of the rod 51.

[0031] Of course, in order to facilitate the rotation of the rod 51, two notches 54 are symmetrically provided on the outer side of the rod 51 in this embodiment. The two notches 54 form a locking part for a wrench. That is, when it is necessary to adjust the rotation of the rod 51, a wrench can be used to lock the rod 51 at the two notches 54. The circumferential position of the rod 51 can be adjusted by rotating the wrench, thus improving the convenience of adjustment.

[0032] In some embodiments, the synchronization component 7 of this invention is fixedly connected to the gear 71 on the outside of the rod 51, and a gear ring 72 is rotatably connected to the bottom of the shielding ring 6. Specifically, in this embodiment, a T-shaped groove is formed on the upper end face of the gear ring 72, and at least two T-shaped sliders are fixed to the bottom of the shielding ring 6. Through the cooperation of the T-shaped sliders and the T-shaped groove, the entire gear ring 72 can be stably rotated below the shielding ring 6. Specifically, at least two gears 71 mesh on the inner side of the gear ring 72.

[0033] Reference Figure 4 As shown, this illustrates different back plating conditions under different opening diameters of the shielding ring 6. It should be noted that the inner diameter of the shielding ring 6 in this embodiment is 147mm. Since the original shielding ring 6 has an opening diameter of 149mm, its larger diameter causes the back plating to affect the front side distance from the wafer edge by up to 5mm during normal back plating operations, which seriously affects the conventional front side process. Therefore, in this embodiment, the inner diameter is reduced accordingly to achieve a back plating-free effect.

[0034] In addition, the bottom of the shielding ring 6 in this invention is 1.5mm away from the surface of the base 3. By adaptively adjusting the height of the shielding ring 6, it is ensured that the bottom of the shielding ring 6 is 1.5mm away from the top of the base 3, thus ensuring no back plating while improving the uniformity of the coating.

[0035] In summary, the shielding ring 6 in this invention is used to support and shield the wafer during the coating process. Together with the adjustment component 5, it can prevent the front area of ​​the wafer from contacting the base 3. At the same time, the wafer contacts the inward portion 62 at the edge, which effectively prevents back coating from occurring on the front of the wafer. Using this equipment can eliminate back PVD back coating and increase the number of effective wafers on the front, so as to increase production while ensuring product quality.

[0036] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A PVD device for preventing wafer back plating, comprising a chamber (1) and a target material (2) and a susceptor (3) installed in the chamber (1), characterized in that: a bearing (4) is fixedly installed on the connecting portion of the susceptor (3), and an upper portion of the bearing (4) is connected with a shielding ring (6) through at least two adjusting assemblies (5), and the shielding ring (6) is sleeved on the outer side of the susceptor (3); wherein a synchronous assembly (7) is further arranged at the bottom of the shielding ring (6), and the synchronous assembly (7) is used for keeping the at least two adjusting assemblies (5) synchronously rotating.

2. The PVD apparatus for preventing backside plating of a wafer according to claim 1, wherein: The shielding ring (6) comprises a main body (61) and a retracted portion (62) formed at the inner circle of the main body (61), and the retracted portion (62) is used for bearing a wafer.

3. The PVD apparatus for preventing backside plating of a wafer according to claim 1, wherein: The adjusting assembly (5) comprises a rod (51) rotationally connected at the bottom of the shielding ring (6), and a threaded segment (52) is formed at the bottom end of the rod (51); wherein the end surface of the bearing (4) is provided with a threaded hole matched with the threaded segment (52).

4. The PVD apparatus for preventing backside plating of a wafer according to claim 3, wherein: A locking bolt (53) is further threadedly connected at the outer side of the threaded segment (52), and the locking bolt (53) is used for abutting against the upper end surface of the bearing (4).

5. The PVD apparatus for preventing backside plating of a wafer according to claim 3, wherein: Two notches (54) are symmetrically formed at the outer side of the rod (51), and the two notches (54) form a clamping portion matched with a wrench.

6. A PVD apparatus for preventing back-plating of a wafer according to any one of claims 3-5, characterized in that: The synchronous assembly (7) is fixedly connected with a gear (71) at the outer side of the rod (51), and a gear ring (72) is rotationally connected at the bottom of the shielding ring (6), and the at least two gears (71) are engaged at the inner side of the gear ring (72).

7. The PVD apparatus for preventing backside plating of a wafer of claim 1, wherein: The inner hole diameter of the shielding ring (6) is 147 mm, and the distance between the bottom of the shielding ring (6) and the surface of the susceptor (3) is 1.5 mm.

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