Smelting furnace for semiconductor material processing

Abstract

The utility model discloses a smelting furnace for semiconductor material processing, which comprises a processing furnace, an induction heating coil is arranged on the inner side of the processing furnace, a material barrel is arranged on the inner side of the induction heating coil, and the smelting furnace further comprises a limiting cover body which is arranged on the upper side of the material barrel, covers the upper side of the material barrel and reduces the heat dissipation efficiency, the limiting cover body comprises a limiting strip, an extending cover is installed on one side of the limiting strip, an opening structure is formed in one side of the limiting strip, a sealing cover is correspondingly arranged at the opening of the limiting strip, and the sealing cover is rotationally connected with the extending cover. The semiconductor material heating device at least has the following beneficial effects that the limiting cover body is installed on the upper side of the material barrel, heat dissipation is effectively reduced, the heating efficiency is improved, energy consumption is reduced, the sealing cover in the limiting cover body can seal the opening in the upper side of the material barrel, molten semiconductor materials are prevented from making contact with external air, and the service life of the semiconductor materials is prolonged. Oxidation reaction is prevented, and the purity and performance of the material are ensured.

Description

Technical Field

[0001] This application relates to the field of semiconductor material processing technology, and specifically to a furnace for semiconductor material processing. Background Technology

[0002] Semiconductor material processing is one of the key steps in semiconductor manufacturing. Among them, the furnace is an important processing equipment used to heat semiconductor materials to a molten state for subsequent shaping and processing.

[0003] Traditional semiconductor material processing furnaces often suffer from significant heat loss during the heating process, resulting in low energy efficiency. Furthermore, the molten semiconductor material is easily exposed to outside air, leading to oxidation and affecting its purity and performance. In addition, during transportation, the semiconductor material in existing furnaces is prone to hardening due to rapid temperature drops, impacting processing efficiency and quality.

[0004] Therefore, there is an urgent need for a semiconductor material processing furnace that can effectively reduce heat loss, prevent material oxidation, and improve energy efficiency. Utility Model Content

[0005] Therefore, this application provides a furnace for processing semiconductor materials to solve the problems existing in the prior art.

[0006] To achieve the above objectives, this application provides the following technical solution:

[0007] A semiconductor material processing furnace includes a processing furnace, an induction heating coil installed inside the processing furnace, a material container disposed inside the induction heating coil, and further includes:

[0008] A limiting cover is installed on the upper side of the material barrel to cover the upper side of the material barrel and reduce the efficiency of heat dissipation. The limiting cover includes a limiting strip, an extension cover is installed on one side of the limiting strip, an opening structure is opened on one side of the limiting strip, and a closing cover is correspondingly provided at the opening of the limiting strip. The closing cover and the extension cover are rotatably connected.

[0009] Optionally, an installation strip is fixed to the outer side of the upper end of the material bucket, and the installation strip is engaged with the groove-shaped structure inside the closed cover.

[0010] Optionally, a baffle plate is installed at the lower end of the limiting strip, and a groove-shaped structure corresponding to the baffle plate is opened on the inner side of the processing furnace. The cross-section of the baffle plate is arc-shaped, and a compensation plate is installed at the lower end of the sealing cover. The compensation plate is also arc-shaped, and the compensation plate compensates for the gap of the baffle plate.

[0011] Optionally, both the limiting strip and the outer side of the sealing cover are provided with a protruding structure.

[0012] Optionally, a top seat installed inside the processing furnace is also provided on the lower side of the material barrel.

[0013] Optionally, a water tank is installed at the lower end of the processing furnace, the inside of the water tank is filled with water, a negative pressure pump is installed inside the water tank, and the outlet of the negative pressure pump is connected to the inlet of the heat exchange tube. The heat exchange tube is installed in the cavity in the middle of the processing furnace.

[0014] Optionally, the lower end of the processing furnace is also fixed with a sealing block corresponding to the upper opening of the water tank to seal the upper opening of the water tank.

[0015] Compared with the prior art, this application has at least the following beneficial effects:

[0016] 1. By installing a limiting cover on the upper side of the material barrel, heat loss is effectively reduced, heating efficiency is improved, and energy consumption is reduced. In addition, the sealing cover in the limiting cover can seal the upper opening of the material barrel, preventing the molten semiconductor material from contacting the outside air, preventing oxidation reaction, and ensuring the purity and performance of the material.

[0017] 2. The outer shielding formed by the limiting strip and the compensation plate reduces the contact area between the material barrel and the outside air during transportation, reduces the cooling efficiency of the semiconductor material, avoids the material from hardening too quickly, and improves the stability of transportation.

[0018] 3. The water tank and heat exchange tubes installed at the bottom of the furnace can absorb the waste heat inside the furnace and discharge the heated water through a negative pressure pump, realizing the recovery and utilization of waste heat and further improving energy efficiency. Attached Figure Description

[0019] To more intuitively illustrate the prior art and this application, exemplary drawings are provided below. It should be understood that the specific shapes and structures shown in the drawings should not generally be regarded as limiting conditions for implementing this application; for example, based on the technical concept disclosed in this application and the exemplary drawings, those skilled in the art are able to easily make conventional adjustments or further optimizations to the addition / reduction / classification, specific shapes, positional relationships, connection methods, size ratios, etc. of certain units (components).

[0020] Figure 1 This application provides an overall structural schematic diagram of a furnace for processing semiconductor materials.

[0021] Figure 2 This application provides an overall exploded structural diagram of a semiconductor material processing furnace.

[0022] Figure 3A schematic diagram of the overall structure of a limiting cover for a semiconductor material processing furnace provided in this application;

[0023] Figure 4 A front cross-sectional view of a semiconductor material processing furnace provided in this application;

[0024] Figure 5 This is a top cross-sectional view of the limiting cover of a semiconductor material processing furnace provided in this application.

[0025] Explanation of reference numerals in the attached figures:

[0026] 1. Processing furnace; 2. Induction heating coil; 3. Material bucket; 4. Limiting cover; 401. Limiting strip; 402. Baffle plate; 403. Extension cover; 404. Sealing cover; 405. Compensating plate; 5. Mounting strip; 6. Top seat; 7. Sealing block; 8. Water tank; 9. Heat exchange tube; 10. Negative pressure pump; 11. Water outlet. Detailed Implementation

[0027] The following is in conjunction with the appendix Figure 1-5 The present application will be further described in detail through specific embodiments.

[0028] The present invention provides a semiconductor material processing furnace, including a processing furnace 1, an induction heating coil 2 installed inside the processing furnace 1, and a material bucket 3 disposed inside the induction heating coil 2, wherein the semiconductor material in the material bucket 3 is induction heated by the induction heating coil 2.

[0029] A limiting cover 4 is installed on the upper side of the material barrel 3 to cover the upper side of the material barrel 3 and reduce the efficiency of heat dissipation. The limiting cover 4 includes a limiting strip 401, an extension cover 403 is installed on one side of the limiting strip 401, and an opening structure is opened on one side of the limiting strip 401 to facilitate material discharge. A closing cover 404 is correspondingly provided at the opening of the limiting strip 401, and the closing cover 404 and the extension cover 403 are rotatably connected so that the closing cover 404 can close the opening. In this way, during the heating process of the induction heating coil 2, the upper opening of the material barrel 3 is closed to prevent oxidation when the molten semiconductor material comes into contact with the outside air.

[0030] An installation strip 5 is fixed to the upper outer side of the material bucket 3, and the installation strip 5 and the groove structure inside the sealing cover 404 form a snap-fit ​​connection. By utilizing the snap-fit ​​connection between the sealing cover 404 and the installation strip 5, the limiting cover 4 can be easily removed as a whole, thereby pouring out the molten semiconductor material in the material bucket 3.

[0031] A baffle plate 402 is installed at the lower end of the limiting strip 401, and a groove structure corresponding to the baffle plate 402 is opened on the inner side of the processing furnace 1. The cross-section of the baffle plate 402 is arc-shaped. A compensation plate 405 is installed at the lower end of the sealing cover 404, and the cross-section of the compensation plate 405 is arc-shaped. The compensation plate 405 compensates for the gap of the baffle plate 402 to form a complete circle. Specifically, the outer shielding cover formed by the baffle plate 402 and the compensation plate 405 can reduce the area of ​​the material barrel 3 in contact with the outside air during transportation, thereby reducing the cooling efficiency of the semiconductor material in the material barrel 3 and preventing it from hardening due to excessive temperature drop.

[0032] Both the limiting strip 401 and the closing cover 404 have raised structures on their outer sides to facilitate external clamping, thereby removing the material bucket 3 from the processing furnace 1;

[0033] The material barrel 3 is also provided with a top seat 6 installed in the processing furnace 1 on the lower side to raise the material barrel 3 and prevent it from being suspended in the air;

[0034] A water tank 8 is installed at the lower end of the processing furnace 1. The inside of the water tank 8 is filled with water. A sealing block 7 corresponding to the upper opening of the water tank 8 is also fixed at the lower end of the processing furnace 1 to seal the upper opening of the water tank 8. A negative pressure pump 10 is installed inside the water tank 8, and the outlet of the negative pressure pump 10 is connected to the inlet of the heat exchange tube 9. The heat exchange tube 9 is installed in the cavity in the middle of the processing furnace 1, so that the negative pressure pump 10 draws water from the water tank 8 into the heat exchange tube 9 to absorb the waste heat inside the processing furnace 1, thereby reusing the waste heat. The heated water is discharged from the outlet 11 of the heat exchange tube 9, which is also connected to the space inside the water tank 8.

[0035] The technical features of the above embodiments can be combined in any way (as long as there is no contradiction in the combination of these technical features). For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described; these embodiments not explicitly written should also be considered to be within the scope of this specification.

Claims

1. A furnace for processing semiconductor material, comprising a processing furnace (1), an induction heating coil (2) is installed on the inner side of the processing furnace (1), a material bucket (3) is arranged on the inner side of the induction heating coil (2), characterized in that, Also include: The upper side of the material bucket (3) is provided with a limiting cover (4) to cover the upper side of the material bucket (3) and reduce the heat dissipation efficiency, wherein the limiting cover (4) comprises a limiting strip (401), one side of the limiting strip (401) is provided with an extension cover (403), one side of the limiting strip (401) is provided with an opening structure, and the opening of the limiting strip (401) is provided with a closing cover (404) in correspondence, and the closing cover (404) and the extension cover (403) are rotatably connected.

2. The furnace for processing semiconductor material according to claim 1, wherein The upper end of the material bucket (3) is fixed with a mounting strip (5), and the mounting strip (5) and the groove structure in the inner side of the closing cover (404) are snap-connected.

3. The furnace of claim 1, wherein The lower end of the limiting strip (401) is provided with a blocking plate (402), and the inner side of the processing furnace (1) is provided with a groove structure corresponding to the blocking plate (402), the cross section of the blocking plate (402) is arc-shaped, the lower end of the closing cover (404) is provided with a compensation plate (405), and the cross section of the compensation plate (405) is arc-shaped, the compensation plate (405) compensates for the gap of the blocking plate (402).

4. The furnace of claim 1 wherein, The outer sides of the limiting strip (401) and the closing cover (404) are provided with protruding structures.

5. The furnace of claim 1 wherein, The lower side of the material bucket (3) is also provided with a top seat (6) mounted in the processing furnace (1).

6. The furnace of claim 1 wherein, The lower end of the processing furnace (1) is provided with a water tank (8), the inner side of the water tank (8) is filled with water, the inner side of the water tank (8) is provided with a negative pressure pump (10), and the water outlet of the negative pressure pump (10) is communicated with the water inlet of the heat exchange pipe (9), and the heat exchange pipe (9) is installed in the cavity of the middle part of the processing furnace (1).

7. A furnace for processing semiconductor material as defined in claim 6, wherein The lower end of the processing furnace (1) is also fixed with a closing block (7) corresponding to the upper end opening of the water tank (8), which closes the upper end opening of the water tank (8).

Images