L-band ultra-low noise coefficient amplifier

Abstract

The utility model relates to the technical field of ultra-low noise coefficient amplification, in particular to an L-band ultra-low noise coefficient amplifier which comprises a bearing mechanism, and a substrate is arranged on the bearing mechanism. A gallium arsenide transistor, an input matching circuit, an output matching circuit, a power supply bias circuit and a static bias circuit are arranged on the substrate; the input matching circuit comprises a first ceramic capacitor, a second ceramic capacitor and a first wire-wound inductor; the gallium arsenide transistor is connected with the first wire-wound inductor, and the first wire-wound inductor and the first ceramic capacitor are connected in series; and the second ceramic capacitor and the first wire-wound inductor are arranged in parallel. According to the invention, by optimizing device type selection, matching network design and a biasing circuit, an ultra-low noise coefficient and high gain performance are realized; the noise coefficient is reduced, and meanwhile, the optimal noise system at the L wave band can be lower than 0.3 dB; and meanwhile, quick assembly is facilitated, and firmness and stability of connection are guaranteed.

Description

TECHNICAL FIELD

[0001] The utility model relates to ultra -low noise coefficient amplification technical field especially relates to a L wave band ultra -low noise coefficient amplifier. BACKGROUND

[0002] In microwave communication and remote sensing system, the noise coefficient of amplifier is one of the key parameters to determine the sensitivity of system. L wave band is widely used in satellite communication, weather radar, soil moisture measurement and other fields, but due to its low frequency, it is easy to be affected by environmental noise and device noise itself. Although the existing L wave band amplifier can meet certain gain requirement, its noise coefficient is high, and it is difficult to meet the requirement of high sensitivity system.

[0003] Traditional low noise amplifier adopts high electron mobility transistor (HEMT) or field effect transistor (FET) technology, but the noise performance of these devices in L wave band still has room for improvement. In addition, the existing design has optimization deficiency in the design of matching network and bias circuit, which leads to the difficulty of further reducing the noise coefficient. Therefore, there is an urgent need for an amplifier with ultra -low noise coefficient, high gain and high stability in L wave band. SUMMARY

[0004] The utility model discloses a L wave band ultra -low noise coefficient amplifier to solve the shortcoming in prior art.

[0005] In order to realize the above-mentioned purpose, the utility model adopts the following technical scheme:

[0006] A kind of L wave band ultra -low noise coefficient amplifier, including bearing mechanism, the bearing mechanism is equipped with substrate;

[0007] The substrate is equipped with gallium arsenide transistor, input matching circuit, output matching circuit, power supply bias circuit and static bias circuit;

[0008] The input matching circuit includes first ceramic capacitor, second ceramic capacitor and first wire-wound inductor;The gallium arsenide transistor and first wire-wound inductor are connected, and the first wire-wound inductor and first ceramic capacitor are connected in series;Second ceramic capacitor and first wire-wound inductor are connected in parallel;

[0009] The output matching circuit includes fourth ceramic capacitor and third ceramic capacitor;The third ceramic capacitor and gallium arsenide transistor are connected, and the fourth ceramic capacitor and third ceramic capacitor are connected in parallel;

[0010] The power supply bias circuit comprises a second wire-wound inductor and a second thick film resistor, which are connected in parallel, and the second wire-wound inductor and the second thick film resistor are connected with the output matching circuit, and the second wire-wound inductor is connected in parallel with a fifth ceramic capacitor and a sixth ceramic capacitor;

[0011] The static bias circuit comprises a first thick film resistor, and the first thick film resistor is connected with a gallium arsenide transistor.

[0012] Compared with the prior art, the device selection, the matching network design and the bias circuit are optimized to realize the super low noise coefficient and the high gain performance, so that the noise coefficient is reduced, and the noise coefficient can be lower than 0.3 dB in the L wave band; meanwhile, the device is convenient to quickly assemble, and the firmness and stability of the connection are ensured.

[0013] Preferably, the bearing mechanism comprises a mounting box, four clamping mechanisms are arranged on the bottom of the mounting box, and the substrate is located in the four clamping mechanisms.

[0014] The upper end of the mounting box is detachably connected with a cover plate.

[0015] Further, the clamping mechanism can quickly realize the installation and fixation of the substrate, and the substrate can be quickly disassembled.

[0016] Preferably, bolts are arranged at four corners of the cover plate, and the bolts are screwed into the mounting box.

[0017] Further, the bolts can realize the connection and fixation of the mounting box and the cover plate, and after the connection, the lower end of the cover plate can abut against the clamping mechanism, so as to effectively realize the stability of the substrate installation.

[0018] Preferably, the clamping mechanism comprises four fixed plates fixed on the bottom of the mounting box, a reset mechanism is arranged on one side of the fixed plate, a conical rotating block is arranged on the reset mechanism, the conical rotating block is hinged on one side of the upper end of the fixed plate, the upper and lower ends of the conical rotating block are arranged in an inclined manner, and the substrate is located between the fixed plate and the conical rotating block.

[0019] Further, the fixed plate is fixedly connected with the mounting box, and the upper and lower ends of the conical rotating block are arranged in an inclined manner, so that the substrate can be clamped, the upper end inclined surface of the conical rotating block can be pressed by the substrate, the conical rotating block can be turned over, the substrate can be lowered, the substrate abuts against the fixed plate, the conical rotating block can be turned towards the fixed plate through the action of the reset mechanism, the lower end of the conical rotating block can press the substrate, and the clamping of the substrate is completed.

[0020] Preferably, the reset mechanism comprises a connecting plate fixed on one side of the fixed plate, and a flexible telescopic rod member is rotatably connected to the end of the connecting plate away from the fixed plate, and the piston rod of the flexible telescopic rod member is rotatably connected to one side of the conical rotating block.

[0021] Further, in actual production, the flexible telescopic rod member is composed of a tube body, a spring member and a piston rod, the piston rod is slidably installed in the tube body, the spring member is also arranged in the tube body, and the upper and lower ends of the spring member are fixedly connected with the bottom of the tube body and the end of the piston rod located in the tube body respectively, so as to adapt to the overturning of the conical rotating block and push the conical rotating block to rotate and clasp the base plate towards the fixed plate.

[0022] Preferably, the lower end of the conical rotating block and the upper end of the fixed plate are fixed with rubber pads respectively, and the upper ends of the base plate are respectively in abutment with the two rubber pads.

[0023] Further, the rubber pads help to protect the base plate.

[0024] The utility model discloses the beneficial effect is:

[0025] 1, install integrated radiating fin at the bottom of base plate, reduce device operating temperature, reduce thermal noise, adopt the mode that distributed matching network and lumped parameter component combine, realize wideband impedance matching, reduce signal reflection and noise introduction, low noise bias circuit is designed simultaneously, adopt low noise stabilized power supply and filter capacitor, reduce the influence of power supply noise on amplifier performance, through the design can make noise coefficient extremely low, and the noise coefficient optimum in L wave band can be below 0.3dB;

[0026] 2, fixed plate and installation box are fixedly connected, and the upper and lower ends of the conical rotating block are obliquely arranged, so that the base plate can be clamped, the upper end inclined surface of the conical rotating block can be pressed by the base plate, the conical rotating block can be overturned, the base plate can be lowered, the base plate abuts against the fixed plate, the conical rotating block can be rotated towards the fixed plate through the reset mechanism, the lower end of the conical rotating block can press the base plate, and the clamping of the base plate is completed. ACCURATE DRAWINGS

[0027] Figure 1 An equivalent circuit block diagram of the L wave band ultra-low noise coefficient amplifier is provided for the utility model;

[0028] Figure 2 A top view of the L wave band ultra-low noise coefficient amplifier is provided for the utility model;

[0029] Figure 3 A sectional view of the L wave band ultra-low noise coefficient amplifier is provided for the utility model;

[0030] Figure 4The utility model provides a kind of L wave band ultra-low noise factor amplifier's fixed plate and the connecting structure diagram of conical rotating block of the utility model;

[0031] Figure 5 The utility model provides a kind of L wave band ultra-low noise factor amplifier simulates band-pass filter simulation graph by simulation software;

[0032] In the drawing: 1 first ceramic capacitor, 2 second ceramic capacitor, 3 first wire-wound inductor, 4 first thick film resistor, 5 gallium arsenide transistor, 6 second wire-wound inductor, 7 second thick film resistor, 8 third ceramic capacitor, 9 fourth ceramic capacitor, 10 fifth ceramic capacitor, 11 sixth ceramic capacitor, 12 mounting box, 13 conical rotating block, 14 cover plate, 15 base plate, 16 fixed plate, 17 elastic telescopic rod piece, 18 rubber pad, 19 integrated heat sink. DETAILED DESCRIPTION

[0033] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all the embodiments.

[0034] REFERENCE Figures 1-5 An L wave band ultra-low noise factor amplifier, including bearing mechanism, bearing mechanism is equipped with base plate 15;Convenient for quick installation and removal base plate 15;Base plate 15 is equipped with gallium arsenide transistor 5, input matching circuit, output matching circuit, power supply bias circuit and static bias circuit;Input matching circuit includes first ceramic capacitor 1, second ceramic capacitor 2 and first wire-wound inductor 3;Gallium arsenide transistor 5 and first wire-wound inductor 3 are connected, and first wire-wound inductor 3 and first ceramic capacitor 1 are connected in series;Second ceramic capacitor 2 and first wire-wound inductor 3 are connected in parallel;First ceramic capacitor 1, second ceramic capacitor 2 and first wire-wound inductor 3 in input matching circuit all adopt high Q value capacitor and inductor;

[0035] Power supply bias circuit includes second wire-wound inductor 6 and second thick film resistor 7, and second wire-wound inductor 6 and second thick film resistor 7 are connected in parallel, and second wire-wound inductor 6 and second thick film resistor 7 are connected with output matching circuit, and fifth ceramic capacitor 10 and sixth ceramic capacitor 11 are connected in parallel on second wire-wound inductor 6;Static bias circuit includes first thick film resistor 4, and first thick film resistor 4 and gallium arsenide transistor 5 are connected;Through the above low-noise bias circuit, low-noise stabilized power supply and filter capacitor are used, and the influence of power supply noise on amplifier performance is reduced;

[0036] The input matching circuit is composed of a first ceramic capacitor 1 in series, a second ceramic capacitor 2 in parallel to the ground, and a first wire-wound inductor 3 in series; the output matching circuit is composed of a third ceramic capacitor 8 in series, and a fourth ceramic capacitor 9 in parallel to the ground; the power supply bias circuit is composed of a second wire-wound inductor 6 and a second thick-film resistor 7 in parallel, a fifth ceramic capacitor 10, and a sixth ceramic capacitor 11 to the ground; the static bias circuit is composed of a first thick-film resistor 4 in series to the power supply; the low-noise device of GaAs transistor 5 is used as the main device of the amplifier, the high electron mobility and low noise characteristics of which are used to significantly reduce the noise coefficient of the amplifier, the matching network is designed by combining the distributed matching network and the lumped parameter components to realize impedance matching, reduce signal reflection and noise introduction, and the input and output impedance matching is realized by the first ceramic capacitor 1, the second ceramic capacitor 2, the first wire-wound inductor 3, the third ceramic capacitor 8, and the fourth ceramic capacitor 9; the second wire-wound inductor 6, the second thick-film resistor 7, the fifth ceramic capacitor 10, and the sixth ceramic capacitor 11 of the bias circuit are optimized to design a low-noise bias circuit, a low-noise stabilized power supply, and a filter capacitor are used to reduce the influence of power supply noise on the performance of the amplifier, and the first thick-film resistor 4 provides a suitable operating point such as static current and voltage for the transistor to achieve the design of the lowest noise coefficient, Figure 5 The noise coefficient of the amplifier in the range of 1100-1600MHz in the application is simulated by simulation software.

[0037] With reference to Figures 2-4 The bearing mechanism comprises a mounting box 12, four clamping mechanisms are arranged on the bottom of the mounting box 12, a substrate 15 is arranged in the four clamping mechanisms, and an integrated heat sink 19 is arranged at the lower end of the substrate 15; the working temperature of the device is reduced, and the thermal noise is further reduced; a cover plate 14 is detachably connected to the upper end of the mounting box 12, bolts are arranged at the four corners of the cover plate 14, and the bolts are screwed into the mounting box 12; the mounting box 12 and the cover plate 14 can be connected and fixed through the bolts, and after being connected, the lower end of the cover plate 14 can abut against the clamping mechanisms, so that the stability of the installation of the substrate 15 is effectively realized.

[0038] With reference to Figures 2-4The clamping mechanism comprises four fixed plates 16 fixed at the bottom of the mounting box 12, a reset mechanism is arranged on one side of the fixed plate 16, a conical rotating block 13 is arranged on the reset mechanism, the conical rotating block 13 is hinged to one side of the upper end of the fixed plate 16, the upper and lower ends of the conical rotating block 13 are both arranged in an inclined manner, and the base plate 15 is located between the fixed plate 16 and the conical rotating block 13; the fixed plate 16 is fixedly connected with the mounting box 12, and the upper and lower ends of the conical rotating block 13 are arranged in an inclined manner, so that the base plate 15 can be clamped, the upper end of the conical rotating block 13 can be pressed by the base plate 15, the conical rotating block 13 can be turned over, the base plate 15 can be lowered, the base plate 15 abuts against the fixed plate 16, the conical rotating block 13 can be turned to the fixed plate 16 through the reset mechanism, the lower end of the conical rotating block 13 can press the base plate 15, and the base plate 15 can be clamped and fixed.

[0039] With reference to Figures 2-4 The reset mechanism comprises a connecting plate fixed to one side of the fixed plate 16, and an elastic telescopic rod 17 is rotatably connected to one end of the connecting plate away from the fixed plate 16; in actual production and preparation, the elastic telescopic rod 17 is composed of a pipe body, a spring and a piston rod, the piston rod is slidably arranged in the pipe body, the spring is arranged in the pipe body, and the upper and lower ends of the spring are fixedly connected with the bottom of the pipe body and one end of the piston rod located in the pipe body, so that the conical rotating block 13 can be turned over and pushed to clamp the base plate 15.

[0040] With reference to Figures 2-4 The lower end of the conical rotating block 13 and the upper end of the fixed plate 16 are both fixedly provided with rubber pads 18, the upper ends of the two rubber pads 18 are respectively abutted against the base plate 15, the rubber pads 18 can protect the edges of the base plate 15, and the base plate 15 can be fully pressed, so that the base plate 15 is firmly installed.

[0041] In the utility model, low noise device of gallium arsenide transistor 5 is used as amplifier main device, high electron mobility and low noise characteristics are utilized, noise coefficient of amplifier is reduced obviously, matching network design is adopted, distributed matching network and lumped parameter element are combined, impedance matching is realized, signal reflection and noise introduction are reduced, first ceramic capacitor 1, second ceramic capacitor 2, first wire wound inductance 3, third ceramic capacitor 8 and fourth ceramic capacitor 9 realize input and output impedance matching; second wire wound inductance 6, second thick film resistance 7, fifth ceramic capacitor 10 and sixth ceramic capacitor 11 are optimized, low noise bias circuit is designed, low noise stabilized power supply and filter capacitor are adopted, influence of power supply noise on amplifier performance is reduced, first thick film resistance 4 provides suitable working point such as static current and voltage for transistor, and the design of minimum noise coefficient is achieved.

[0042] In the installation, the staff can make the base plate 15 extrude the conical rotating block 13, make the conical rotating block 13 overturn, move the base plate 15 to the conical rotating block 13 and the fixed plate 16, make the conical rotating block 13 extrude the base plate 15 through the elastic expansion rod 17, and when installing the cover plate 14, make the cover plate 14 extrude the conical rotating block 13, facilitate the rubber pad 18 extruding the base plate 15, ensure the stability of the base plate 15 installation, set the integrated heat sink 19 at the lower end of the base plate 15 to improve the heat dissipation effect.

[0043] The above only describes the preferred embodiment of the present application, but the protection scope of the present application is not limited to this. Any person skilled in the art can make equivalent replacement or change according to the technical scheme and the inventive concept of the present application within the technical range disclosed by the present application, which should be covered by the protection scope of the present application.

Claims

1. An L-band ultra low noise figure amplifier comprising a support mechanism, characterized in that: The bearing mechanism is provided with a substrate (15); The substrate (15) is provided with a gallium arsenide transistor (5), an input matching circuit, an output matching circuit, a power supply bias circuit and a static bias circuit; The input matching circuit comprises a first ceramic capacitor (1), a second ceramic capacitor (2) and a first wire-wound inductor (3); the gallium arsenide transistor (5) is connected with the first wire-wound inductor (3); the first wire-wound inductor (3) is connected in series with the first ceramic capacitor (1); the second ceramic capacitor (2) is connected in parallel with the first wire-wound inductor (3); The output matching circuit comprises a fourth ceramic capacitor (9) and a third ceramic capacitor (8); the third ceramic capacitor (8) is connected with the gallium arsenide transistor (5); the fourth ceramic capacitor (9) is connected in parallel with the third ceramic capacitor (8); The power supply bias circuit comprises a second wire-wound inductor (6) and a second thick-film resistor (7); the second wire-wound inductor (6) and the second thick-film resistor (7) are connected in parallel; the second wire-wound inductor (6) and the second thick-film resistor (7) are connected with the output matching circuit; the second wire-wound inductor (6) is provided with a fifth ceramic capacitor (10) and a sixth ceramic capacitor (11) connected in parallel; The static bias circuit comprises a first thick-film resistor (4); the first thick-film resistor (4) is connected with the gallium arsenide transistor (5).

2. A L-band ultra low noise figure amplifier as claimed in claim 1, characterized in that: The bearing mechanism comprises a mounting box (12); the bottom of the mounting box (12) is provided with four clamping mechanisms; the substrate (15) is located in the four clamping mechanisms; the lower end of the substrate (15) is provided with an integrated heat sink (19); The upper end of the mounting box (12) is detachably connected with a cover plate (14).

3. A L-band ultra low noise figure amplifier according to claim 2, characterized in that: The cover plate (14) is provided with bolts at four corners; the bolts are screwed into the mounting box (12).

4. A L-band ultra low noise figure amplifier as recited in claim 2, characterized by: The clamping mechanism comprises four fixed plates (16) fixed to the bottom of the mounting box (12); one side of the fixed plate (16) is provided with a reset mechanism; the reset mechanism is provided with a conical rotating block (13); the conical rotating block (13) is hinged to one side of the upper end of the fixed plate (16); the upper and lower ends of the conical rotating block (13) are both inclined; the substrate (15) is located between the fixed plate (16) and the conical rotating block (13).

5. A L-band ultra low noise figure amplifier according to claim 4, characterized in that: The reset mechanism comprises a connecting plate fixed to one side of the fixed plate (16); the end of the connecting plate away from the fixed plate (16) is rotatably connected with an elastic telescopic rod (17); the piston rod of the elastic telescopic rod (17) is rotatably connected to one side of the conical rotating block (13).

6. A L-band ultra low noise figure amplifier as recited in claim 4, characterized by: The lower end of the conical rotating block (13) and the upper end of the fixed plate (16) are both fixed with rubber pads (18); the upper ends of the substrate (15) are respectively in contact with the two rubber pads (18).

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