Separated gate super-junction IGBT (Insulated Gate Bipolar Translator) device

Abstract

The utility model discloses a split gate super junction I-GBT device, which comprises a first P + layer and an epitaxial layer arranged on the first P + layer, a P-type base region is formed at the upper part of the epitaxial layer through injection, P columns and N columns are periodically arranged below the P-type base region along a first direction, and the upper ends of the P columns and the N columns are connected with the P-type base region; separation gate structures are arranged above the N columns, and an N-type base region and a second P + region are sequentially formed on the P-type base region in an injection mode between every two adjacent separation gate structures. The lower end of the first P + layer is provided with back metal, and the upper ends of the separation gate structure and the second P + region are provided with emitter metal. According to the utility model, an additional hole extraction channel can be formed when the device is turned off, so that the current turn-off is accelerated, and the turn-off loss is reduced; miller capacitance can be reduced, and switching loss is reduced.

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