Substrate bearing seat and vapor phase growth equipment

Abstract

The utility model provides a substrate bearing seat and vapor phase growth equipment. The substrate bearing seat comprises a base, a shaft body, a tray and a height adjusting mechanism, the shaft body fixedly penetrates through the middle of the bottom face of the base, a first groove for containing the tray is formed in the top face of the base, and the side wall, facing the shaft body, of the first groove is an open side wall. A second groove is formed in the top surface of the tray, the tray comprises a near-end part and a far-end part, the near-end part is movably matched with the shaft body through the side wall of the opening, and the far-end part is a free end; the height adjusting mechanism comprises an execution part and a medium channel which are communicated with each other, the execution part is located below the far end part, and a driving medium provided in the medium channel can provide power for the execution part to enable the execution part to lift the far end part, so that a height difference is formed between the far end part and the near end part, and the depletion trend of process gas during deposition on a substrate can be changed; and the uniformity of the thickness of the substrate film layer is improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and in particular to a substrate carrier and a vapor phase growth device. Background Technology

[0002] In the field of semiconductor material growth and thin film preparation technology, horizontal flow equipment is widely used to achieve high-quality material growth and thin film deposition because it can provide a uniform gas flow environment. This type of equipment includes two types: center-inlet and side-inlet. The growth surface of the substrate is set parallel to the flow direction of the process gas to control the uniformity of gas flow.

[0003] However, during the process gas supply process, the process gas concentration is relatively high when it reaches the upstream region of the substrate (i.e., the substrate support structure), and the process gas shows a depletion trend when it reaches the downstream region of the substrate.

[0004] This phenomenon of upstream process gas enrichment and downstream process gas depletion has a significant adverse impact on the uniformity and quality of the thin film. Specifically, because the upstream reaction at the substrate center dominates, the process gas gradually depletes along the gas flow direction during deposition. This not only leads to uneven film thickness between the upstream and downstream sides of the substrate but may also affect the performance and reliability of the final product. Utility Model Content

[0005] In view of the defects and deficiencies in the prior art, this application provides a substrate support and a vapor phase growth device, which can adjust the tilt angle of the substrate in real time according to the deposition situation during the process through a height adjustment mechanism. This is beneficial to the depletion trend of process gas during deposition on the substrate and improves the uniformity of the substrate film thickness.

[0006] A first aspect of this application provides a substrate carrier, comprising:

[0007] The base has a first groove on its top surface and a shaft fixedly inserted through the middle of its bottom surface. The side wall of the first groove facing the shaft is an open side wall.

[0008] A tray is disposed in the first groove, and a second groove is provided on the top surface of the tray to place the substrate; the tray includes a proximal end and a distal end, the proximal end being movably adapted to the shaft via the opening sidewall, and the distal end being a free end;

[0009] A height adjustment mechanism is disposed on the base and includes an actuator and a medium channel that are connected to each other. The medium channel is used to provide a driving medium. The actuator is located below the distal end and is used to raise the distal end under the action of the driving medium, so that there is a height difference between the proximal end and the distal end.

[0010] In one embodiment, the medium channel includes a driving gas channel, and the actuator includes an outlet communicating with the driving gas channel;

[0011] The driving gas channel extends within the base and through the shaft to the outside. The gas outlet is located at the bottom of the first groove, and the distal end covers the gas outlet.

[0012] In one embodiment, the actuator includes a drive cylinder and a piston movably disposed in the drive cylinder. The piston is located below the distal end. The drive cylinder is disposed within the base. The medium channel communicates with the drive cylinder to provide a driving force that causes the piston to move toward or away from the distal end. The bottom of the first groove is provided with a piston outlet for the piston to move through.

[0013] In one embodiment, the medium channel is disposed within the base and extends to the outside via the shaft.

[0014] In one embodiment, the top of the shaft protrudes beyond the top surface of the base, and the proximal end includes a proximal sidewall close to the shaft, the shape of which is in a concave-convex fit with the shape of the shaft sidewall.

[0015] In one embodiment, the proximal sidewall and the shaft sidewall are slidably fitted together.

[0016] In one embodiment, there is a gap between the proximal sidewall and the shaft sidewall, the gap not exceeding 0.2 mm, such that when the proximal end is raised relative to the distal end, the tray moves toward the top of the shaft and causes the proximal sidewall to slide against the shaft sidewall.

[0017] In one embodiment, the number of the first grooves is at least two, and they are evenly distributed around the shaft. Both the first grooves and the corresponding trays are fan-shaped.

[0018] A second aspect of this application provides a vapor phase growth apparatus, including a growth chamber, a gas injection device, and a substrate carrier disposed within the growth chamber, the substrate carrier including a tray, the tray including a proximal end and a distal end;

[0019] The gas injection device is located at the top of the growth chamber and is positioned opposite the middle of the substrate support to provide process gas and to make the process gas flow in the direction from the proximal end to the distal end.

[0020] In one embodiment, the substrate carrier includes a base and a shaft fixedly inserted through the middle of the base. The shaft dynamically seals through the bottom of the growth chamber to drive the base to rotate.

[0021] As described above, the substrate carrier and vapor phase growth apparatus of this application have the following beneficial effects:

[0022] The substrate carrier of this application has a shaft fixedly inserted through the middle of the bottom surface of the base; a first groove for placing the substrate is provided on the top surface of the base, and the side wall of the first groove facing the shaft is an open side wall; a second groove for placing the substrate is provided on the top surface of the tray, and the tray includes a proximal end and a distal end, the proximal end being movably adapted to the shaft through the open side wall, and the distal end being a free end; a height adjustment structure is provided on the base, including an actuator and a medium channel connected to each other, the actuator being located below the distal end, and the driving medium in the medium channel being used to provide power to the actuator, causing the actuator to raise the distal end, thereby creating a height difference between the distal end and the proximal end, which can change the depletion trend of the process gas during deposition on the substrate and improve the uniformity of the substrate film thickness. Attached Figure Description

[0023] Figure 1 The diagram shown is a three-dimensional structural schematic of the substrate carrier provided in Embodiment 1 of this utility model.

[0024] Figure 2 The diagram shown is a partial top view of the substrate support provided in Embodiment 1 of this utility model.

[0025] Figure 3 The diagram shown is a cross-sectional view of a substrate support provided in Embodiment 2 of this utility model.

[0026] Figure 4 The diagram shown is a cross-sectional view of another substrate support provided in Embodiment 2 of this utility model.

[0027] Figure 5 The diagram shown is a cross-sectional view of a substrate support provided in Embodiment 3 of this utility model.

[0028] Figure 6 The diagram shown is a cross-sectional view of another substrate support provided in Embodiment 3 of this utility model.

[0029] Figure 7 The diagram shown is a structural schematic of the vapor phase growth apparatus provided in Embodiment 4 of this utility model.

[0030] Component designation explanation

[0031] 10, Growth chamber; 20, Gas injection device; 30, Heating device; 100, Base; 110, First groove; 200, Shaft; 210, Shaft top; 220, Shaft sidewall; 300, Tray; 301, Proximal end; 302, Distal end; 310, Second groove; 400, Substrate; 511, Gas outlet; 512, Drive cylinder; 513, Piston; 520, Medium channel; 521, Drive gas channel; 600, Countersunk hole; 3011, Proximal sidewall; 5211, Drive gas main channel; 5212, Drive gas branch channel; 320, Rotation drive gas channel; 3201, Rotation drive main channel; 3202, Rotation drive branch channel; 3203, Rotation drive gas channel outlet. Detailed Implementation

[0032] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model.

[0033] Please see Figures 1 to 7 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this utility model. Therefore, the illustrations only show the components related to this utility model and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0034] The following examples will now be used to illustrate the concept in detail.

[0035] Example 1

[0036] This embodiment provides a substrate carrier, such as Figure 1 and Figure 2 As shown, the substrate carrier includes a base 100, a shaft 200, a tray 300, and a height adjustment mechanism.

[0037] like Figure 1 As shown, the top surface of the base 100 is provided with a first groove 110 for placing the tray 300, and the shaft 200 is fixedly inserted through the middle of the bottom surface of the base 100. The side wall of the first groove 110 facing the shaft 200 is an open side wall.

[0038] In some embodiments, the first groove 110 is a groove formed on the top surface of the base 100, and the top of the first groove 110 is open. Specifically, the top surface of the base 100 is provided with a plurality of radial sidewalls extending radially along the top surface of the base 100, which are radially distributed around the shaft 200. Adjacent radial sidewalls and the edge of the base 100 form the first groove 110, and the sidewall of the first groove 110 near the shaft 200 is an open sidewall.

[0039] like Figure 2 As shown, the tray 300 is placed within the first groove 110, including a proximal end 301 and a distal end 302. The proximal end 301 is the end closest to the shaft 200, and the distal end 302 is the end opposite to the proximal end 301 radially along the first groove 110 (i.e., from the shaft 200 towards the outer edge of the base 100). The proximal end 301 is movably adapted to the shaft 200 via an open sidewall, while the distal end 302 is a free end. The tray 300, placed within the first groove 110, can move relative to the first groove 110, possessing a certain degree of freedom of movement. In some specific embodiments, the bottom surface of the tray 300 contacts the bottom surface of the first groove 110, and each side of the tray 300 has a certain gap relative to the first groove 110. The gap is set so as not to affect the movement of the distal end 302 relative to the base 100 through the height adjustment mechanism. When the shaft 200 is set as a rotatable shaft, the rotation of the base 100 is necessary to enable the tray 300 in the first groove 110 to rotate synchronously and remain stable.

[0040] The top surface of the tray 300 is provided with a second groove 310 for placing the substrate 400.

[0041] A height adjustment mechanism is disposed on the base 100 and includes a communicating actuator and a medium channel 520. The medium channel 520 is used to provide a driving medium. The actuator is located below the distal end 302. Under the action of the driving medium, the actuator raises the distal end 302, creating a height difference between the distal end 302 and the proximal end 301. Therefore, an angle α is formed between the bottom surface of the tray 300 and the bottom surface of the first groove 110. Reducing the flow rate of the driving medium or stopping the supply of the driving medium can lower the distal end 302.

[0042] When the flow direction of the process gas supplied to the substrate 400 is from the proximal end 301 to the distal end 302, the actuator of the height adjustment mechanism raises the distal end 302 relative to the proximal end 301, thereby adjusting the depletion trend of the process gas during deposition on the substrate 400 and improving the uniformity of the film thickness of the substrate 400.

[0043] In some embodiments, the shaft 200 includes a shaft top 210 and a shaft sidewall 220. The shaft top 210 protrudes from the top surface of the base 100, and the shaft sidewall 220 specifically refers to the sidewall of the shaft top 210. The proximal end 301 of the tray 300 includes a proximal sidewall 3011 near the shaft 200, and the shape of the proximal sidewall 3011 and the shape of the shaft sidewall 220 are in a concave-convex fit relationship. In some specific embodiments, the proximal sidewall 3011 is a concave arc surface, and the shaft sidewall 220 is a convex arc surface, and the radii of curvature of both are the same.

[0044] In some embodiments, the proximal sidewall 3011 is slidably attached to the shaft sidewall 220. When the distal end 302 is lifted relative to the substrate 100, the proximal sidewall 3011 slides along at least a portion of the sidewall of the shaft sidewall 220, such that the height of the distal end 302 is higher than the height of the proximal end 301.

[0045] In some embodiments, there is a gap between the proximal sidewall 3011 and the shaft sidewall 220. As the distal end 302 is raised relative to the base 100, the tray 300 moves toward the shaft sidewall 220, causing the proximal sidewall 3011 to slide against at least a portion of the sidewall of the shaft sidewall 220. In some embodiments, the gap does not exceed 0.2 mm.

[0046] In some embodiments, the top surface height of the shaft sidewall 220 is the same as the top surface height of the proximal end 301.

[0047] In some embodiments, the bottom surface of the shaft sidewall 220 is flush with the bottom surface of the proximal end 301, and the difference between the height of the top surface of the shaft sidewall 220 and the height of the proximal end 301 is greater than or equal to 0 and less than 2 cm. Controlling the difference between the height of the top surface of the shaft sidewall 220 and the height of the proximal end 301 to no more than 2 cm ensures that the convexity of the top surface of the shaft sidewall 220 does not cause turbulence in the process gas flow that is detrimental to the deposition reaction, thus ensuring the stability of the deposition reaction. Controlling the bottom surface of the shaft sidewall 220 to be flush with the bottom surface of the proximal end 301 ensures the smoothness of the movement of the tray 300 toward the shaft sidewall 220 when the distal end 302 is lifted by the actuator of the height adjustment mechanism.

[0048] In some embodiments, the bottom surface of the first groove 110 where the bottom surface of the proximal end 301 is located is flush with the bottom surface of the shaft sidewall 220.

[0049] In some embodiments, the number of first grooves 110 is at least 2, and they are evenly distributed around the shaft 200. The first grooves 110 and the corresponding placed trays 300 are both fan-shaped.

[0050] In some embodiments, the top surface of the base 100, excluding the first groove 110, is flush with the top surface of the tray 300. When the number of the first groove 110 and the corresponding tray 300 is at least two, the top surface of each tray 300 is flush with the top surface between adjacent trays 300 to reduce or even avoid adverse turbulence of process gases.

[0051] In some specific embodiments, the base 100 can be cylindrical in shape, and a plurality of fan-shaped first grooves 110 are provided in the base 100. Each fan-shaped first groove 110 has the same center, that is, the center of the base 100. A tray 300 is placed in each first groove 110. The shape of the tray 300 is adapted to the shape of the first groove 110. The proximal end 301 of the tray 300 is defined as the end close to the center of the base 100, and the distal end 302 of the tray 300 is the end away from the center of the base 100.

[0052] In some embodiments, at least one cylindrical second groove 310 is provided in each tray 300. For example, each tray 300 may have one cylindrical second groove 310, and the centers of all the second grooves 310 in the trays 300 are located circumferentially on the concentric circles of the base 100. As another example, each tray 300 may have two cylindrical second grooves 310, and the centers of the two second grooves 310 in the same tray 300 are located on the same radial direction of the tray 300. One of the second grooves 310 in the same tray 300 near the center of the base 100 is defined as the inner ring second groove, and the other second groove 310 in the same tray 300 is defined as the outer ring second groove. The centers of all the inner ring second grooves are located circumferentially on the same concentric circles of the trays 300, and the centers of all the outer ring second grooves are located circumferentially on the same concentric circles of the trays 300.

[0053] Example 2

[0054] This embodiment also provides a substrate carrier, such as Figure 3 and Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that:

[0055] like Figure 3 and Figure 4 As shown, the medium channel 520 includes a driving gas channel 521, and the actuator includes an outlet 511 that communicates with the driving gas channel 521.

[0056] The driving gas channel 521 extends within the base 100 and extends to the outside via the shaft 200, specifically to the outside of the growth chamber; the gas outlet 511 is located at the bottom of the first groove 110, and the distal end 302 shields the gas outlet.

[0057] In some embodiments, a driving gas channel 521 is disposed within the base 100, with its outlet extending near the distal end 302 and communicating with the first groove 110 through an outlet 511, and its inlet communicating with an external gas source through a shaft 200. Driving gas can be introduced into the driving gas channel 521 to guide the driving gas into the first groove 110. The driving gas channel 521 provides driving gas to raise the distal end 302 relative to the proximal end 301, so that an angle α is formed between the bottom surface of the tray 300 and the bottom of the first groove 110. Reducing the flow rate of the driving gas or stopping the introduction of the driving gas can cause the distal end 302 to descend.

[0058] When the flow direction of the process gas supplied to the substrate 400 is from the proximal end 301 to the distal end 302, the driving gas channel 521 can provide driving gas to raise the distal end 302 relative to the proximal end 301, thereby adjusting the depletion trend of the process gas during deposition on the substrate 400 and improving the uniformity of the film thickness of the substrate 400.

[0059] In some embodiments, the gas flow rate provided by the driving gas channel 521 is controlled to not exceed 15 liters / minute, so that the height of the distal end 302 relative to the proximal end 301 does not exceed 5 millimeters. If the height is too large, it will significantly obstruct the flow of process gas, causing poor laminar flow or even backflow of process gas.

[0060] In some embodiments, one end of the driving gas channel 521 opens into the portion of the shaft 200 located outside the growth chamber to provide driving gas. The driving gas channel 521 extends within the shaft 200 to the fixed joint between the shaft 200 and the base 100 (located below the top 210 of the shaft) and then extends into the base 100. It extends radially along the base 100 until it approaches the proximal end 301 and is located below the tray 300, and then extends toward the bottom surface of the first groove 110 until it connects to the bottom surface of the first groove 110.

[0061] In some embodiments, the number of first grooves 110 is at least two, and the driving gas channels 521 are connected to the first grooves 110 in a one-to-one correspondence. Each driving gas channel 521 can be independently set and its ventilation controlled, which is beneficial for determining whether the distal end 302 needs to be raised based on the real-time deposition process, and which specific distal end 302 of the tray 300 placed in the first groove 110 needs to be raised.

[0062] In some embodiments, the driving gas channel 521 includes a driving gas main channel 5211 extending in the base 100 in the direction from the proximal end 301 to the distal end 302. The driving gas main channel 5211 is provided in a one-to-one correspondence with the first groove 110 to facilitate independent ventilation control.

[0063] In some embodiments, the main driving gas channel 5211 is located below the first groove 110.

[0064] In some embodiments, the driving gas channel 521 further includes at least two driving gas branch channels 5212 located near the distal end 302 and communicating with the main driving gas channel 5211. Each driving gas branch channel 5212 communicates with a first groove 110, and the bottom surface of the tray 300 on which the tray 300 is placed covers the outlet 511 of each driving gas branch channel 5212 on the first groove 110. The multiple driving gas branch channels 5212 lift the distal end 302, which can act on different areas of the bottom surface of the distal end 302 and the nearby tray 300 structure, which is beneficial to the stability of the lifting.

[0065] During the descent of the distal end 302 relative to the base 100, if there is only one driving gas branch channel 5212, the descent rate can be controlled by gradually slowing down the driving gas flow rate. If there are multiple driving gas branch channels 5212, the driving gas flow rate of each driving gas branch channel 5212 can be slowed down synchronously, or the ventilation of each driving gas branch channel 5212 can be closed sequentially, or the driving gas flow rate can be slowed down sequentially. The flow rate control principle is the same during the lifting of the distal end 302 relative to the base 100, and will not be repeated here.

[0066] In some embodiments, the driving gas in the driving gas channel 521 is selected from one or more of nitrogen, argon, and hydrogen.

[0067] In some embodiments, such as Figure 4 As shown, the second groove 310 on the top surface of the tray 300 is connected to the rotation-driven air passage 320 below. The second groove 310 is used to place the substrate 400 to define the position of the substrate 400 relative to the tray 300. The second groove 310 is a groove formed on the top surface of the tray 300. The rotation-driven air passage 320 is provided inside the tray 300. The rotation-driven air passage 320 is located in the shaft 200, extends into the tray 300 through the side wall of the shaft 200, and communicates with the second groove 310 to provide rotation-driven gas to make the substrate 400 rotate relative to the tray 300.

[0068] In some specific embodiments, one end of the self-rotating drive airway 320 is opened in the portion of the shaft 200 located outside the growth chamber to provide self-rotating drive gas. The self-rotating drive airway 320 extends within the shaft 200 to the top 210 of the shaft and then extends through the side wall 220 of the shaft into the base 100. It extends radially along the base 100 until it is located below the second groove 310, and then extends toward the bottom surface of the second groove 310 until it connects with the second groove 310.

[0069] The bottom surface of the second groove 310 has several rotational driving gas slots that communicate with the opening of the rotational driving gas passage 320 on the bottom surface of the second groove 310. The rotational driving gas enters each rotational driving gas slot through the rotational driving gas passage 320 to drive the substrate 400 to rotate relative to the tray 300. The specific implementation of the several rotational driving gas slots is a conventional technical means in this field.

[0070] In some embodiments, the proximal sidewall 3011 is slidably attached to at least a portion of the sidewall of the axial sidewall 220, and the outlet of the rotation-driven air passage 320 located on the axial sidewall 220 is connected to the outlet located on the proximal sidewall 3011. During the movement of the distal end 302 relative to the base 100, the outlet of the rotation-driven air passage 320 located on the axial sidewall 220 is connected to or opposite to the outlet located on the proximal sidewall 3011 to ensure effective transmission of the rotation-driven gas and effective driving of the substrate 400 to rotate.

[0071] In some embodiments, a gap of no more than 0.2 mm exists between the proximal sidewall 3011 and the axial sidewall 211. The outlet of the rotation-driven air passage 320 located on the axial sidewall 220 is opposite to the outlet located on the proximal sidewall 3011 to ensure effective gas transmission through the rotation-driven air passage 320 and effective rotation of the substrate 400. During the movement of the distal end 302 relative to the base 100, the outlet of the rotation-driven air passage 320 located on the axial sidewall 220 is opposite to or connected to the outlet located on the proximal sidewall 3011 to ensure effective transmission of the rotation-driven gas and effective rotation of the substrate 400.

[0072] In some embodiments, the self-rotating air passage 320 includes a self-rotating main air passage 3201 and a self-rotating branch air passage 3202. The self-rotating main air passage 3201 is a main air passage located on the tray 300 and extends radially along the tray 300. In some specific embodiments, the extending direction of the self-rotating main air passage 3201 is parallel to the upper or lower surface of the tray 300, that is, the direction of gas flow within it is parallel to the upper or lower surface of the tray 300.

[0073] In some embodiments, the opening direction of the self-rotating branch airway 3202 is perpendicular to the direction of the self-rotating main airway 3201 or there is a certain angle between them, and at least two self-rotating branch airways 3202 are included. The distribution position of the multiple self-rotating branch airways 3202 can be symmetrical about the center of the substrate 400 so that the substrate 400 can achieve a better self-rotation effect. The inlet of each self-rotating branch airway 3202 is connected to the outlet of the self-rotating main airway 3201.

[0074] In an optional embodiment, the gas in the self-rotating drive airway 320 is selected from one or more of nitrogen, argon, and hydrogen.

[0075] Example 3

[0076] This embodiment also provides a substrate carrier, such as Figure 5 and Figure 6 As shown, the difference between this embodiment and Embodiments 1 and 2 is that:

[0077] like Figure 5 and Figure 6 As shown, the actuator includes a drive cylinder 512 and a piston 513 movably disposed in the drive cylinder 512. The piston 513 is located below the distal end 302. The drive cylinder 512 is disposed in the base 100. The medium channel 520 communicates with the drive cylinder 512 to provide a driving force for the piston 513 to move toward or away from the distal end 302. The bottom of the first groove 110 is provided with a piston outlet for the piston 513 to move through. The bottom surface of the substrate 400 covers the piston outlet.

[0078] In some embodiments, the media channel 520 is disposed within the base 100 and located below the tray 300. The media channel 520 also extends into the shaft 200 and extends through the shaft 200 to the outside of the growth chamber.

[0079] In some embodiments, the number of first grooves 110 and actuators is at least two, and they are arranged in a one-to-one correspondence. The number of first grooves 110 and actuators is the same, with one actuator corresponding to one first groove 110. In this way, the actuator can determine whether it is necessary to lift the distal end 302 according to the real-time deposition process, and which specific first groove 110 is used to lift the distal end 302 of the tray 300.

[0080] In some embodiments, the drive cylinder 512, piston 513, base 100, and tray 300 have the same constituent materials. For example, the constituent material can be graphite, and the graphite can be coated with pyrolytic carbon, silicon carbide, or other surface coatings depending on the growth material.

[0081] In some embodiments, the medium within the medium channel 520 may be a gas, selected from one or more of nitrogen, argon, and hydrogen.

[0082] Example 4

[0083] This embodiment provides a vapor phase growth device, such as... Figure 7 As shown, the vapor phase growth apparatus includes a growth chamber 10, a gas injection device 20, a substrate carrier as described in Embodiments 1 to 3 disposed in the growth chamber 10, and a heating device 30 for heating the substrate 400 in the substrate carrier.

[0084] The substrate carrier includes a tray 300, which includes a proximal end 301 and a distal end 302.

[0085] The gas injection device 20 is located at the top of the growth chamber 10 and is positioned opposite the middle of the substrate carrier to provide process gas and to make the process gas flow in the direction from the proximal end 301 to the distal end 302.

[0086] In some embodiments, the substrate carrier includes a base 100 and a shaft 200 fixedly disposed in the middle of the base 100. The shaft 200 dynamically seals through the bottom of the growth chamber 10 to drive the base 100 to rotate. Specifically, a rotary seal assembly is provided on the portion of the shaft 200 extending outside the growth chamber 10 to drive the shaft 200 to rotate and ensure airtightness between the shaft 200 and the growth chamber 10. This is achieved using conventional techniques in the art. In some specific embodiments, the rotary seal assembly is a magnetohydrodynamic rotary seal assembly.

[0087] In some embodiments, the rotational speed of the shaft 200 is controlled to not exceed 100 rpm. Excessive rotational speed can easily cause significant displacement or even ejection of the tray 300 and / or the substrate 400 carried by the tray 300 relative to the base 100.

[0088] In some specific embodiments, an optical detection device is installed on the gas injection device 20 outside the growth chamber 10 to detect the reflectivity of different regions on the substrate 400 where the thin film is deposited in real time to calculate the growth rate, thereby evaluating the uniformity of the thin film growth on the substrate 400 in real time. The specific implementation method is a conventional technique in the art.

[0089] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A substrate carrier, characterized in that, include: The base has a first groove on its top surface and a shaft fixedly inserted through the middle of its bottom surface. The side wall of the first groove facing the shaft is an open side wall. A tray is disposed in the first groove, and a second groove is provided on the top surface of the tray to place the substrate; the tray includes a proximal end and a distal end, the proximal end being movably adapted to the shaft via the opening sidewall, and the distal end being a free end; A height adjustment mechanism is disposed on the base and includes an actuator and a medium channel that are connected to each other. The medium channel is used to provide a driving medium. The actuator is located below the distal end and is used to raise the distal end under the action of the driving medium, so that there is a height difference between the proximal end and the distal end.

2. The substrate carrier according to claim 1, characterized in that, The medium channel includes a driving gas channel, and the actuator includes an outlet communicating with the driving gas channel; The driving gas channel extends within the base and through the shaft to the outside. The gas outlet is located at the bottom of the first groove, and the distal end covers the gas outlet.

3. The substrate carrier according to claim 1, characterized in that, The actuator includes a drive cylinder and a piston movably disposed in the drive cylinder. The piston is located below the distal end. The drive cylinder is disposed within the base. The medium channel communicates with the drive cylinder to provide a driving force that causes the piston to move toward or away from the distal end. The bottom of the first groove is provided with a piston outlet for the piston to move through.

4. The substrate carrier according to claim 3, characterized in that, The medium channel is disposed within the base and extends to the outside via the shaft.

5. The substrate carrier according to claim 1, characterized in that, The top of the shaft protrudes from the top surface of the base, and the proximal end includes a proximal sidewall close to the shaft, the shape of which is in a concave-convex fit with the shape of the shaft sidewall.

6. The substrate carrier according to claim 5, characterized in that, The proximal sidewall and the shaft sidewall are slidably fitted together.

7. The substrate carrier according to claim 5, characterized in that, There is a gap between the proximal sidewall and the shaft sidewall, the gap not exceeding 0.2 mm, such that when the proximal end is raised relative to the distal end, the tray moves toward the top of the shaft and the proximal sidewall slides into contact with the shaft sidewall.

8. The substrate carrier according to claim 1, characterized in that, The number of the first grooves is at least 2, and they are evenly distributed around the shaft. Both the first grooves and the corresponding trays are fan-shaped.

9. A vapor phase growth apparatus, characterized in that, The invention includes a growth chamber, a gas injection device, and a substrate carrier as described in any one of claims 1 to 8 disposed within the growth chamber, wherein the substrate carrier includes a tray, and the tray includes a proximal end and a distal end; The gas injection device is located at the top of the growth chamber and is positioned opposite the middle of the substrate support to provide process gas and to make the process gas flow in the direction from the proximal end to the distal end.

10. The vapor phase growth apparatus according to claim 9, characterized in that, The substrate carrier includes a base and a shaft fixedly inserted through the middle of the base. The shaft dynamically seals through the bottom of the growth chamber to drive the base to rotate.

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