Voltage stabilizing circuit, integrated chip and electronic equipment

The voltage regulator circuit, composed of a current mirror module and a potential adjustment module, solves the problems of high compatibility and cost of voltage reference circuits in CMOS process, and achieves constant output voltage and reduced cost of the voltage regulator circuit.

CN223941281UActive Publication Date: 2026-02-24TIANSHUI TIANGUANG SEMICON
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Patent Information

Application Number
CN202520826164.3
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-04-28
Publication Date
2026-02-24
Estimated Expiration
2035-04-28

AI Technical Summary

Technical Problem

Existing voltage reference circuits face difficulties in being compatible with CMOS processes and reducing production costs, resulting in complex circuit structures or high production costs.

Method used

A voltage regulator circuit consisting of a current mirror module, a voltage divider module, and a potential adjustment module is used. The current is fed back to the potential adjustment module through the current mirror module, which adjusts the output voltage of the voltage regulator circuit to keep it constant, thus realizing the function of a Zener diode.

Benefits of technology

It achieves compatibility with complementary metal-oxide-semiconductor (CMOS) processes, replacing Zener diodes and reducing the production cost of voltage regulator circuits.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides a voltage stabilizing circuit, an integrated chip and electronic equipment, and belongs to the technical field of integrated circuits. Wherein the first end of the current mirror module is used for accessing power supply voltage, the second end of the current mirror module is connected with the second end of the voltage dividing module, the third end of the current mirror module is connected with the first end of the potential adjusting module, and the fourth end of the current mirror module is connected with the second end of the potential adjusting module; the fourth end of the potential adjusting module and the first end of the voltage dividing module are connected to the output end of the voltage stabilizing circuit. The current mirror module is used for feeding back the current to the potential adjusting module by mirroring the current when the current at the output end of the voltage stabilizing circuit is greater than a preset value; and the potential adjusting module is used for pulling down the voltage of the output end of the voltage stabilizing circuit under the action of the current so as to keep the output voltage of the voltage stabilizing circuit constant. The voltage stabilizing circuit can achieve the effects of being compatible with a complementary metal oxide semiconductor technology, replacing a Zener diode and reducing the production cost of the voltage stabilizing circuit.
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Description

Technical Field

[0001] This application relates to the field of integrated circuit technology, and more specifically, to a voltage regulator circuit, an integrated chip, and an electronic device. Background Technology

[0002] In recent years, with the rapid development of science and technology, chip research and development technologies have emerged in an endless stream, and various types of chips have been widely used in various fields, such as communications, smart homes, and industrial automation. However, as chip research and development technologies mature, market competition among chips is becoming increasingly fierce, and chips with low cost and high reliability in circuit function implementation are highly sought after. Among them, voltage references are important reference measurements for circuit potentials. Different circuits have different requirements for voltage references, which requires chips to balance potential accuracy with cost and power consumption to meet the needs of chip applications.

[0003] In related technologies, the voltage reference circuit of the chip is often implemented by three schemes. The first is to use a voltage with a positive temperature coefficient superimposed on the base-emitter voltage of the transistor with a negative temperature coefficient in an appropriate ratio to generate a medium-precision bandgap reference as a voltage reference. The second is to directly generate a voltage reference with low precision through a Zener diode. The third is to build a series voltage reference through a transistor circuit to replace the Zener diode.

[0004] However, when implementing voltage reference circuits based on related technologies, the first approach requires transistors and operational amplifiers, resulting in a complex circuit structure and incompatibility with Complementary Metal-Oxide-Semiconductor Technology (CMOS). The second approach, while incompatible with CMOS technology, also necessitates modifications to the manufacturing process of nanodiodes, increasing production costs. The third approach requires the use of bipolar technology. Therefore, these related technologies suffer from incompatibility with CMOS technology and high production costs. Utility Model Content

[0005] The purpose of this application is to provide a voltage regulator circuit and integrated chip that can be compatible with complementary metal-oxide-semiconductor (CMOS) technology, replace Zener diodes, and reduce the production cost of the voltage regulator circuit.

[0006] The embodiments of this application are implemented as follows:

[0007] A first aspect of this application provides a voltage regulator circuit, which includes: a current mirror module, a voltage divider module, and a potential adjustment module.

[0008] The first terminal of the current mirror module is used to connect to the power supply voltage. The second terminal of the current mirror module is connected to the second terminal of the voltage divider module. The third terminal of the current mirror module is connected to the first terminal of the potential adjustment module. The fourth terminal of the current mirror module is connected to the second terminal of the potential adjustment module. The fifth terminal of the current mirror module, the third terminal of the voltage divider module, and the third terminal of the potential adjustment module are all grounded.

[0009] The fourth terminal of the potential adjustment module and the first terminal of the voltage divider module are both connected to the output terminal of the voltage regulator circuit;

[0010] The current mirror module is used to feed the current back to the potential adjustment module by mirroring the current when the current at the output of the voltage regulator circuit is greater than a preset value.

[0011] The voltage regulation module is used to pull down the voltage at the output terminal of the voltage regulator circuit under the action of current, so as to keep the output voltage of the voltage regulator circuit constant.

[0012] As one possible implementation, the current mirror module includes: a first current mirror and a second current mirror;

[0013] The first end of the first current mirror is used to connect to the power supply voltage. The second end of the first current mirror is connected to the first end of the second current mirror. The third end of the first current mirror is connected to the second end of the second current mirror and the first end of the potential adjustment module, respectively. The fourth end of the first current mirror is connected to the second end of the potential adjustment module.

[0014] The third terminal of the second current mirror is connected to the second terminal of the voltage divider module, and the fourth terminal of the second current mirror is grounded.

[0015] As one possible implementation, the first current mirror includes: a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, a third P-type metal-oxide-semiconductor transistor, a fourth P-type metal-oxide-semiconductor transistor, a fifth P-type metal-oxide-semiconductor transistor, and a sixth P-type metal-oxide-semiconductor transistor.

[0016] The source of the first P-type metal-oxide-semiconductor transistor, the source of the second P-type metal-oxide-semiconductor transistor, and the source of the third P-type metal-oxide-semiconductor transistor are all used to connect to the power supply voltage.

[0017] The gate of the first P-type metal-oxide-semiconductor transistor is connected to the gate of the second P-type metal-oxide-semiconductor transistor, the gate of the third P-type metal-oxide-semiconductor transistor, and the drain of the first P-type metal-oxide-semiconductor transistor, respectively. The drain of the first P-type metal-oxide-semiconductor transistor is also connected to the source of the fourth P-type metal-oxide-semiconductor transistor.

[0018] The gate of the fourth P-type metal oxide semiconductor transistor is connected to the gate of the fifth P-type metal oxide semiconductor transistor, the gate of the sixth P-type metal oxide semiconductor transistor, and the drain of the fourth P-type metal oxide semiconductor transistor, respectively. The drain of the fourth P-type metal oxide semiconductor transistor is also connected to the first end of the second current mirror.

[0019] The drain of the second P-type metal-oxide-semiconductor transistor is connected to the source of the fifth P-type metal-oxide-semiconductor transistor. The drain of the fifth P-type metal-oxide-semiconductor transistor is connected to the second terminal of the second current mirror and the first terminal of the potential adjustment module. The drain of the third P-type metal-oxide-semiconductor transistor is connected to the source of the sixth P-type metal-oxide-semiconductor transistor. The drain of the sixth P-type metal-oxide-semiconductor transistor is connected to the second terminal of the potential adjustment module.

[0020] As one possible implementation, the second current mirror includes: a first N-type metal-oxide-semiconductor transistor and a second N-type metal-oxide-semiconductor transistor;

[0021] The source of the first N-type metal-oxide-semiconductor transistor and the source of the second N-type metal-oxide-semiconductor transistor are both grounded. The gate of the first N-type metal-oxide-semiconductor transistor and the gate of the second N-type metal-oxide-semiconductor transistor are both connected to the second terminal of the voltage divider module. The drain of the first N-type metal-oxide-semiconductor transistor is connected to the drain of the fourth P-type metal-oxide-semiconductor transistor, and the drain of the second N-type metal-oxide-semiconductor transistor is connected to the drain of the fifth P-type metal-oxide-semiconductor transistor.

[0022] As one possible implementation, the potential adjustment module includes: a feedback component and a pull-down component;

[0023] The control terminal of the feedback component is connected to the third terminal of the first current mirror and the second terminal of the second current mirror, respectively. The input terminal of the feedback component is connected to the control terminal of the pull-down component and the fourth terminal of the first current mirror, respectively. The input terminal of the pull-down component is connected to the output terminal of the voltage regulator circuit. The output terminals of the feedback component and the pull-down component are both grounded.

[0024] The pull-down component is used to pull down the voltage at the output of the voltage regulator circuit when the current at the output of the voltage regulator circuit is greater than a preset value, so as to keep the output voltage of the voltage regulator circuit constant.

[0025] As one possible implementation, the feedback component is a third N-type metal-oxide-semiconductor transistor;

[0026] The gate of the third N-type metal-oxide-semiconductor transistor is connected to the third terminal of the first current mirror and the second terminal of the second current mirror, respectively. The drain of the third N-type metal-oxide-semiconductor transistor is connected to the control terminal of the pull-down assembly and the fourth terminal of the first current mirror, respectively. The source of the third N-type metal-oxide-semiconductor transistor is grounded.

[0027] As one possible implementation, the pull-down component is a fourth N-type metal-oxide-semiconductor transistor;

[0028] The gate of the fourth N-type metal-oxide-semiconductor transistor is connected to the fourth terminal of the first current mirror and the drain of the third N-type metal-oxide-semiconductor transistor, respectively. The drain of the fourth N-type metal-oxide-semiconductor transistor is connected to the output terminal of the voltage regulator circuit, and the source of the fourth N-type metal-oxide-semiconductor transistor is grounded.

[0029] As one possible implementation, the voltage divider module includes: a first resistor and a second resistor;

[0030] One end of the first resistor is connected to the output terminal of the voltage regulator circuit, and the other end of the first resistor is connected to the gate of the first N-type metal oxide semiconductor transistor, the gate of the second N-type metal oxide semiconductor transistor, and one end of the second resistor, respectively. The other end of the second resistor is grounded.

[0031] The second resistor is used so that when the current at the output of the voltage regulator circuit increases, the voltage across the second resistor increases synchronously.

[0032] A second aspect of this application provides an integrated chip that includes the voltage regulator circuit described in the first aspect.

[0033] A third aspect of this application provides an electronic device in which the integrated chip described in the second aspect is deployed.

[0034] The beneficial effects of the embodiments of this application include:

[0035] This application provides a voltage regulator circuit comprising a current mirror module, a voltage divider module, and a potential adjustment module. The first terminal of the current mirror module is connected to the operating voltage provided by an external power supply. The second terminal of the current mirror module is connected to the second terminal of the voltage divider module. The third terminal of the current mirror module is connected to the first terminal of the potential adjustment module, and the fourth terminal of the current mirror module is connected to the second terminal of the potential adjustment module. Both the fourth terminal of the potential adjustment module and the first terminal of the voltage divider module are connected to the output terminal of the voltage regulator circuit. When the voltage regulator circuit is in the reverse breakdown state of the Zener diode, the current at the output terminal of the voltage regulator circuit increases sharply. If the current at the output terminal of the voltage regulator circuit exceeds a preset value, the second terminal of the current mirror module obtains the current at the output terminal of the voltage regulator circuit via the second terminal of the voltage divider module. The current mirror module mirrors the current obtained at its second terminal and feeds the mirrored current back to the potential adjustment module via its third and fourth terminals. Under the influence of the received feedback current, the potential adjustment module adjusts the voltage at the output terminal of the voltage regulator circuit to maintain a constant output voltage. The voltage regulator circuit is built using complementary metal-oxide-semiconductor (CMOS) technology and can perform the function of a Zener diode. This achieves compatibility with CMOS technology, replaces Zener diodes, and reduces the production cost of the voltage regulator circuit. Attached Figure Description

[0036] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a schematic diagram of the structure of the first voltage regulator circuit provided in the embodiments of this application;

[0038] Figure 2 This is a schematic diagram of the structure of the second voltage regulator circuit provided in the embodiments of this application;

[0039] Figure 3 This is a schematic diagram of the third voltage regulator circuit provided in the embodiments of this application;

[0040] Figure 4 This is a schematic diagram of the structure of the fourth voltage regulator circuit provided in the embodiments of this application;

[0041] Figure 5 This is a schematic diagram of the structure of the fifth voltage regulator circuit provided in the embodiments of this application;

[0042] Figure 6This is a schematic diagram of the sixth voltage regulator circuit provided in the embodiments of this application;

[0043] Figure 7 This is a schematic diagram of the structure of an integrated chip provided in an embodiment of this application;

[0044] Figure 8 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.

[0045] Figure Descriptions: 10: Voltage regulator circuit; 101: Current mirror module; 1011: First current mirror; 111: First P-type metal-oxide-semiconductor transistor; 112: Second P-type metal-oxide-semiconductor transistor; 113: Third P-type metal-oxide-semiconductor transistor; 114: Fourth P-type metal-oxide-semiconductor transistor; 115: Fifth P-type metal-oxide-semiconductor transistor; 116: Sixth P-type metal-oxide-semiconductor transistor; 1012: Second current mirror; 121: First N-type metal-oxide-semiconductor transistor; 122: Second N-type metal-oxide-semiconductor transistor; 102: Voltage divider module; 1021: First resistor; 1022: Second resistor; 103: Potential adjustment module; 1031: Feedback component; 311: Third N-type metal-oxide-semiconductor transistor; 1032: Pull-down component; 321: Fourth N-type metal-oxide-semiconductor transistor; 20: Integrated chip; 30: Electronic device. Detailed Implementation

[0046] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0047] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0048] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0049] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of the invention is in use. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. In addition, the terms "first," "second," and "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0050] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0051] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0052] Currently, voltage reference circuits in integrated chips are often constructed in three ways. The first is to superimpose a voltage with a positive temperature coefficient onto the base-emitter voltage of a transistor with a negative temperature coefficient in an appropriate ratio to generate a medium-precision bandgap reference. The second is to directly use a Zener diode to generate a voltage reference with lower precision. The third is to build a series voltage reference circuit using transistors to replace the Zener diode. However, the first approach requires transistors and operational amplifiers, which leads to a complex circuit structure and incompatibility with CMOS technology. The second approach is incompatible with CMOS technology and requires changes to the manufacturing process of the Zener diode, increasing the production cost of the voltage reference circuit. The third approach requires the use of bipolar technology. This results in the current voltage reference circuits being incompatible with CMOS technology and having high production costs.

[0053] To address this, this application provides a voltage regulator circuit comprising a current mirror module, a voltage divider module, and a potential adjustment module. The current mirror module obtains the output current of the voltage regulator circuit through the voltage divider module. When the output current of the voltage regulator circuit exceeds a preset value, the current mirror module mirrors the current to the potential adjustment module based on the voltage divider circuit. The potential adjustment module adjusts the output voltage of the voltage regulator circuit based on the received feedback current, thereby maintaining a constant output voltage. This achieves compatibility with complementary metal-oxide-semiconductor (CMOS) technology, replaces Zener diodes, and reduces the production cost of the voltage regulator circuit.

[0054] The voltage regulator circuit, integrated chip, and electronic device provided in the embodiments of this application will be explained in detail below with reference to the accompanying drawings.

[0055] Figure 1 For a schematic diagram of a voltage regulator circuit provided in this application, see [link to schematic diagram]. Figure 1 This application provides a voltage regulator circuit 10, which includes a current mirror module 101, a voltage divider module 102, and a potential adjustment module 103.

[0056] The first terminal of the current mirror module 101 is used to connect to the power supply voltage. The second terminal of the current mirror module 101 is connected to the second terminal of the voltage divider module 102. The third terminal of the current mirror module 101 is connected to the first terminal of the potential adjustment module 103. The fourth terminal of the current mirror module 101 is connected to the second terminal of the potential adjustment module 103. The fifth terminal of the current mirror module 101, the third terminal of the voltage divider module 102, and the third terminal of the potential adjustment module 103 are all grounded.

[0057] Optionally, the power supply voltage VDD is the operating voltage provided by an external power supply to the voltage regulator circuit 10. The power supply voltage can be 5V, 10V, 12V, etc., and this application does not make a specific limitation on it.

[0058] Optionally, the current mirror module 101 is composed of multiple current mirrors, each containing multiple metal-oxide-semiconductor transistors. The current mirror module 101 is used to mirror the current at the second terminal of the voltage divider module 102 and feed the mirrored current back to the potential adjustment module 103. Under the action of the feedback loop, the potential adjustment module 103 adjusts the output voltage of the voltage regulator circuit 10 so that the output voltage of the voltage regulator circuit 10 is constant.

[0059] Optionally, the current mirror module 101 is connected to the power supply voltage provided by an external power source via its first terminal; the second terminal of the current mirror module 101 is connected to the second terminal of the voltage divider module 102, and the current mirror module 101 mirrors and replicates the current at the second terminal of the voltage divider module 102 via its second terminal, that is, the current mirror module 101 obtains the current at the output terminal of the voltage regulator circuit 10 via the voltage divider module 102; the third terminal of the current mirror module 101 is connected to the first terminal of the potential adjustment module 103, and the current mirror module 101 feeds back the mirrored current to the first terminal of the potential adjustment module 103 via its third terminal; the fourth terminal of the current mirror module 101 is connected to the second terminal of the potential adjustment module 103, and the potential adjustment module 103 also receives the current fed back by the current mirror module 101 via its second terminal, and the potential adjustment module 103 adjusts the output voltage of the voltage regulator circuit 10 under the action of the feedback current received at the first and second terminals.

[0060] Optionally, the first and second ends of the current mirror module 101 can be regarded as the input ends of the current mirror module 101, and the third and fourth ends of the current mirror module 101 can be regarded as the output ends of the current mirror module 101; the first end of the potential adjustment module 103 serves as the control end of the potential adjustment module 103, and the second end of the potential adjustment module 103 serves as both the control end and the input end of the potential adjustment module 103.

[0061] The fourth terminal of the potential adjustment module 103 and the first terminal of the voltage divider module 102 are both connected to the output terminal of the voltage regulator circuit 10.

[0062] Optionally, the first end of the voltage divider module 102 is connected to the output end of the voltage regulator circuit 10. The voltage divider module 102 is used to divide the voltage at the output end of the voltage regulator circuit 10 and to limit the current transmission at the output end of the voltage regulator circuit 10.

[0063] Optionally, the fourth terminal of the potential adjustment module 103 is connected to the output terminal of the voltage regulator circuit 10. The fourth terminal of the potential adjustment module 103 serves as the output terminal of the potential adjustment module 103, and the potential adjustment module 103 can adjust the output voltage of the voltage regulator circuit 10 through the fourth terminal.

[0064] The current mirror module 101 is used to feed the current back to the potential adjustment module 103 by mirroring the current when the current at the output terminal of the voltage regulator circuit 10 is greater than a preset value.

[0065] Optionally, the voltage regulator circuit 10 is a Zener diode circuit. Essentially, the voltage regulator circuit 10 functions as a Zener diode, providing a reliable voltage reference. When the voltage regulator circuit 10, simulating a Zener diode, is in a reverse bias state, the voltage of the voltage regulator circuit 10 reaches the breakdown voltage threshold, and the voltage regulator circuit 10 is in a reverse breakdown state, causing a sharp increase in the current at the output terminal of the voltage regulator circuit 10.

[0066] Optionally, the preset value is a current threshold set by the user. When the current at the output terminal of the voltage regulator circuit 10 is greater than the preset value, it is determined that the current voltage regulator circuit 10 is used to simulate the reverse breakdown state of the Zener diode. At this time, the voltage regulator circuit 10 needs to maintain the output voltage of the voltage regulator circuit 10 constant.

[0067] Optionally, when the current at the output of the voltage regulator circuit 10 is greater than a preset value, the voltage regulator circuit 10 is in the reverse breakdown state of the Zener diode, and the current mirror module 101 obtains the current through the voltage divider module 102 and feeds it back to the potential adjustment module 103.

[0068] The potential adjustment module 103 is used to pull down the voltage at the output terminal of the voltage regulator circuit 10 under the action of current, so as to keep the output voltage of the voltage regulator circuit 10 constant.

[0069] Optionally, under the influence of the current fed back from the current mirror module 101, the potential adjustment module 103 pulls down the voltage at the output terminal of the voltage regulator circuit 10, so that the output voltage of the voltage regulator circuit 10 remains constant. Here, constant voltage means keeping the voltage clamp of the output voltage of the voltage regulator circuit 10 within a preset voltage threshold. It is worth noting that the preset voltage threshold is determined by the resistance values ​​of the voltage divider resistors in the voltage divider module 102, and this application does not specifically limit it.

[0070] In this embodiment, a voltage regulator circuit is composed of a current mirror module, a voltage divider module, and a potential adjustment module. The first terminal of the current mirror module is used to connect to the operating voltage provided by an external power supply. The second terminal of the current mirror module is connected to the second terminal of the voltage divider module. The third terminal of the current mirror module is connected to the first terminal of the potential adjustment module. The fourth terminal of the current mirror module is connected to the second terminal of the potential adjustment module. The fourth terminal of the potential adjustment module and the first terminal of the voltage divider module are both connected to the output terminal of the voltage regulator circuit. When the voltage regulator circuit is in the reverse breakdown state of the Zener diode, the current at the output terminal of the voltage regulator circuit increases sharply. If the current at the output terminal of the voltage regulator circuit is greater than a preset value, the second terminal of the current mirror module obtains the current at the output terminal of the voltage regulator circuit through the second terminal of the voltage divider module. The current mirror module mirrors the current obtained by the second terminal of the current mirror module and feeds the mirrored current back to the potential adjustment module through the third and fourth terminals of the current mirror module. Under the action of the received feedback current, the potential adjustment module adjusts the voltage at the output terminal of the voltage regulator circuit to keep the output voltage of the voltage regulator circuit constant. The voltage regulator circuit is built using complementary metal-oxide-semiconductor (CMOS) technology and can perform the function of a Zener diode. This achieves compatibility with CMOS technology, replaces Zener diodes, and reduces the production cost of the voltage regulator circuit.

[0071] In one alternative implementation, see [link to implementation details]. Figure 2 The current mirror module 101 in the voltage regulator circuit 10 provided in this application embodiment includes: a first current mirror 1011 and a second current mirror 1012.

[0072] The first end of the first current mirror 1011 is used to connect to the power supply voltage. The second end of the first current mirror 1011 is connected to the first end of the second current mirror 1012. The third end of the first current mirror 1011 is connected to the second end of the second current mirror 1012 and the first end of the potential adjustment module 103 respectively. The fourth end of the first current mirror 1011 is connected to the second end of the potential adjustment module 103.

[0073] Optionally, the first end of the first current mirror 1011 is used to connect to the working voltage provided by an external power supply, the second end of the first current mirror 1011 is connected to the first end of the second current mirror 1012, the first current mirror 1011 obtains the current mirrored by the second current mirror 1012 through the second end, and the current flowing through the first current mirror 1011 is equal to the current at the first end of the second current mirror 1012.

[0074] Optionally, the third end of the first current mirror 1011 and the second end of the second current mirror 1012 are both connected to the first end of the potential adjustment module 103. The potential adjustment module 103 obtains the current mirrored by the first current mirror 1011 and the second current mirror 1012 through the first end. The fourth end of the first current mirror 1011 is connected to the second end of the potential adjustment module 103. The potential adjustment module 103 also obtains the current mirrored by the first current mirror 1011 through the second end.

[0075] The third terminal of the second current mirror 1012 is connected to the second terminal of the voltage divider module 102, and the fourth terminal of the second current mirror 1012 is grounded.

[0076] Optionally, the third terminal of the second current mirror 1012 is connected to the second terminal of the voltage divider module 102. The second current mirror 1012 obtains the current at the second terminal of the voltage divider module 102 via the third terminal and performs a current mirroring copy of the current. The third terminal of the second current mirror 1012 serves as its control terminal, and is turned on or off under the voltage applied to the second terminal of the voltage divider module 102.

[0077] In one alternative implementation, see [link to implementation details]. Figure 3The first current mirror 1011 in the current mirror module 101 of the voltage regulator circuit 10 provided in this application embodiment includes: a first P-type metal oxide semiconductor transistor 111, a second P-type metal oxide semiconductor transistor 112, a third P-type metal oxide semiconductor transistor 113, a fourth P-type metal oxide semiconductor transistor 114, a fifth P-type metal oxide semiconductor transistor 115, and a sixth P-type metal oxide semiconductor transistor 116.

[0078] The source of the first P-type metal-oxide-semiconductor transistor 111, the source of the second P-type metal-oxide-semiconductor transistor 112, and the source of the third P-type metal-oxide-semiconductor transistor 113 are all used to connect to the power supply voltage.

[0079] The gate of the first P-type metal-oxide-semiconductor transistor 111 is connected to the gate of the second P-type metal-oxide-semiconductor transistor 112, the gate of the third P-type metal-oxide-semiconductor transistor 113, and the drain of the first P-type metal-oxide-semiconductor transistor 111, respectively. The drain of the first P-type metal-oxide-semiconductor transistor 111 is also connected to the source of the fourth P-type metal-oxide-semiconductor transistor 114.

[0080] The gate of the fourth P-type metal oxide semiconductor transistor 114 is connected to the gate of the fifth P-type metal oxide semiconductor transistor 115, the gate of the sixth P-type metal oxide semiconductor transistor 116, and the drain of the fourth P-type metal oxide semiconductor transistor 114, respectively. The drain of the fourth P-type metal oxide semiconductor transistor 114 is also connected to the first end of the second current mirror 1012.

[0081] The drain of the second P-type metal-oxide-semiconductor transistor 112 is connected to the source of the fifth P-type metal-oxide-semiconductor transistor 115. The drain of the fifth P-type metal-oxide-semiconductor transistor 115 is connected to the second terminal of the second current mirror 1012 and the first terminal of the potential adjustment module 103, respectively. The drain of the third P-type metal-oxide-semiconductor transistor 113 is connected to the source of the sixth P-type metal-oxide-semiconductor transistor 116. The drain of the sixth P-type metal-oxide-semiconductor transistor 116 is connected to the second terminal of the potential adjustment module 103.

[0082] Optionally, the first current mirror 1011 includes two stages of current mirrors, both of which are common-source and common-gate structures. The first P-type metal-oxide-semiconductor transistor 111 and the fourth P-type metal-oxide-semiconductor transistor 114 form a first-stage current mirror with the second P-type metal-oxide-semiconductor transistor 112 and the fifth P-type metal-oxide-semiconductor transistor 115. The first P-type metal-oxide-semiconductor transistor 111 and the fourth P-type metal-oxide-semiconductor transistor 114 also form a first-stage current mirror with the third P-type metal-oxide-semiconductor transistor 113 and the sixth P-type metal-oxide-semiconductor transistor 116.

[0083] Optionally, the currents in the first P-type metal-oxide-semiconductor transistor 111, the second P-type metal-oxide-semiconductor transistor 112, the third P-type metal-oxide-semiconductor transistor 113, the fourth P-type metal-oxide-semiconductor transistor 114, the fifth P-type metal-oxide-semiconductor transistor 115, and the sixth P-type metal-oxide-semiconductor transistor 116 in the first current mirror 1011 are all equal, and the first current mirror 1011 obtains the current mirrored by the second current mirror 1012 through the drain of the fourth P-type metal-oxide-semiconductor transistor 114.

[0084] In one alternative implementation, see [link to implementation details]. Figure 3 The second current mirror 1012 in the current mirror module 101 of the voltage regulator circuit 10 provided in this application embodiment includes: a first N-type metal oxide semiconductor transistor 121 and a second N-type metal oxide semiconductor transistor 122.

[0085] The source of the first N-type metal-oxide-semiconductor transistor 121 and the source of the second N-type metal-oxide-semiconductor transistor 122 are both grounded. The gate of the first N-type metal-oxide-semiconductor transistor 121 and the gate of the second N-type metal-oxide-semiconductor transistor 122 are both connected to the second terminal of the voltage divider module 102. The drain of the first N-type metal-oxide-semiconductor transistor 121 is connected to the drain of the fourth P-type metal-oxide-semiconductor transistor 114, and the drain of the second N-type metal-oxide-semiconductor transistor 122 is connected to the drain of the fifth P-type metal-oxide-semiconductor transistor 115.

[0086] Optionally, the second current mirror 1012 is a cascode current mirror structure composed of a first N-type metal-oxide-semiconductor transistor 121 and a second N-type metal-oxide-semiconductor transistor 122. The first N-type metal-oxide-semiconductor transistor 121 and the second N-type metal-oxide-semiconductor transistor 122 have the same current.

[0087] In one alternative implementation, see [link to implementation details]. Figure 4The voltage regulation module 103 in the voltage regulator circuit 10 provided in this application embodiment includes: a feedback component 1031 and a pull-down component 1032.

[0088] The control terminal of the feedback component 1031 is connected to the third terminal of the first current mirror 1011 and the second terminal of the second current mirror 1012, respectively. The input terminal of the feedback component 1031 is connected to the control terminal of the pull-down component 1032 and the fourth terminal of the first current mirror 1011, respectively. The input terminal of the pull-down component 1032 is connected to the output terminal of the voltage regulator circuit 10. The output terminals of both the feedback component 1031 and the pull-down component 1032 are grounded.

[0089] The pull-down component 1032 is used to pull down the voltage at the output terminal of the voltage regulator circuit 10 when the current at the output terminal of the voltage regulator circuit 10 is greater than a preset value, so as to keep the output voltage of the voltage regulator circuit 10 constant.

[0090] Optionally, the feedback component 1031 adjusts the current between its source and drain under the mirror current of the first current mirror 1011 and the second current mirror 1012, and the pull-down component 1032 pulls down the voltage at the output terminal of the voltage regulator circuit 10 under the mirror current of the feedback component 1031 and the first current mirror 1011, so that the output voltage of the voltage regulator circuit 10 is constant.

[0091] In one alternative implementation, see [link to implementation details]. Figure 5 In the voltage regulator circuit 10 provided in this application embodiment, the feedback component 1031 in the potential adjustment module 103 is a third N-type metal-oxide-semiconductor transistor 311.

[0092] The gate of the third N-type metal-oxide-semiconductor transistor 311 is connected to the third terminal of the first current mirror 1011 and the second terminal of the second current mirror 1012, respectively. The drain of the third N-type metal-oxide-semiconductor transistor 311 is connected to the control terminal of the pull-down assembly 1032 and the fourth terminal of the first current mirror 1011, respectively. The source of the third N-type metal-oxide-semiconductor transistor 311 is grounded.

[0093] In one alternative implementation, see [link to implementation details]. Figure 5 In the voltage regulator circuit 10 provided in this application embodiment, the pull-down component 1032 in the potential adjustment module 103 is a fourth N-type metal-oxide-semiconductor transistor 321.

[0094] The gate of the fourth N-type metal-oxide-semiconductor transistor 321 is connected to the fourth terminal of the first current mirror 1011 and the drain of the third N-type metal-oxide-semiconductor transistor 311, respectively. The drain of the fourth N-type metal-oxide-semiconductor transistor 321 is connected to the output terminal of the voltage regulator circuit 10, and the source of the fourth N-type metal-oxide-semiconductor transistor 321 is grounded.

[0095] In one alternative implementation, see [link to implementation details]. Figure 6 The voltage divider module 102 in the voltage regulator circuit 10 provided in this application embodiment includes: a first resistor 1021 and a second resistor 1022.

[0096] One end of the first resistor 1021 is connected to the output terminal of the voltage regulator circuit 10, and the other end of the first resistor 1021 is connected to the gate of the first N-type metal oxide semiconductor transistor 121, the gate of the second N-type metal oxide semiconductor transistor 122, and one end of the second resistor, respectively. The other end of the second resistor 1022 is grounded.

[0097] The second resistor 1022 is used so that when the current at the output terminal of the voltage regulator circuit 10 increases, the voltage of the second resistor 1022 increases synchronously.

[0098] Optionally, the voltage divider network formed by the first resistor 1021 and the second resistor 1022 can clamp the voltage of the potential node connected to one end of the first resistor 1021 and one end of the second resistor 1022 at the threshold voltage of the third N-type metal-oxide-semiconductor transistor 311 and the fourth N-type metal-oxide-semiconductor transistor 321, and clamp the output voltage of the voltage regulator circuit 10 at a preset voltage threshold. The preset voltage threshold is determined by the resistance values ​​of the first resistor 1021 and the second resistor 1022, and is equal to the ratio between the sum of the resistance values ​​of the first resistor and the second resistor and the resistance value of the second resistor.

[0099] Optionally, when the current at the output terminal of the voltage regulator circuit 10 is greater than a preset value and the voltage regulator circuit 10 is in a reverse breakdown state, the voltage divider module 102 obtains the current at the output terminal of the voltage regulator circuit 10 through one end of the first resistor 1021. Under the action of this current, the voltage of the second resistor 1022 increases significantly, which leads to an increase in the voltage between the gate and source of the first N-type metal-oxide-semiconductor transistor 121 and the second N-type metal-oxide-semiconductor transistor 122. The drain current of the first N-type metal-oxide-semiconductor transistor 121 and the drain current of the second N-type metal-oxide-semiconductor transistor 122 increase simultaneously. The first current mirror 1011 obtains the drain current of the first N-type metal-oxide-semiconductor transistor 121 through the fourth P-type metal-oxide-semiconductor transistor 114, and mirrors and replicates the drain current of the first N-type metal-oxide-semiconductor transistor 121 through a common-source common-gate mirror structure. At this time, the first P-type metal-oxide-semiconductor transistor 111, the second P-type metal-oxide-semiconductor transistor 112, the third P-type metal-oxide-semiconductor transistor 113, the fourth P-type metal-oxide-semiconductor transistor 114, and the fifth P-type metal-oxide-semiconductor transistor 112... The currents of metal-oxide-semiconductor transistors 115 and 116 are equal to the drain current of the first N-type transistor 121; the current of the fifth P-type transistor 115 is equal to the current of the second N-type transistor 122, and no electromotive force is generated between the fifth P-type transistor 115 and the second N-type transistor 122; the gate voltage of the third N-type transistor 311 remains unchanged, the gate current of the third N-type transistor 311 increases, the current between the source and drain of the third N-type transistor 311 increases, the drain current of the third N-type transistor 311 increases, and the drain voltage of the third N-type transistor 311 also increases; the voltage between the gate and source of the fourth N-type transistor 321 increases, the impedance of the fourth N-type transistor 321 decreases, and the voltage at the output of the voltage regulator circuit 10 is pulled down by the fourth N-type transistor 321.

[0100] Optionally, the common-source cascode current mirror structure in the current mirror module 101 plays an amplification role. When the current mirror module 101 detects a significant increase in the current at the output terminal of the voltage regulator circuit 10, the current mirror module 101 feeds the current back to the potential adjustment module 103 via mirror replication. Under the action of the feedback current, the potential adjustment module 103 dynamically adjusts the output impedance of the fourth N-type metal-oxide-semiconductor transistor 321 so that the output voltage of the voltage regulator circuit 10 remains constant.

[0101] Figure 7A schematic diagram of an integrated chip provided in this application is shown below. Figure 7 The integrated chip 20 provided in this application embodiment includes the above-mentioned voltage regulator circuit 10. How the voltage reference of the integrated chip 20 is provided is consistent with the working principle of the above-mentioned voltage regulator circuit 10, and will not be described in detail here.

[0102] Figure 8 A schematic diagram of the structure of an electronic device provided in this application is shown below. Figure 8 The electronic device 30 provided in this application embodiment has the aforementioned integrated chip 20 deployed in it.

[0103] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

[0104] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A voltage regulator circuit, characterized in that, The voltage regulator circuit includes: a current mirror module, a voltage divider module, and a potential adjustment module; The first terminal of the current mirror module is used to connect to the power supply voltage. The second terminal of the current mirror module is connected to the second terminal of the voltage divider module. The third terminal of the current mirror module is connected to the first terminal of the potential adjustment module. The fourth terminal of the current mirror module is connected to the second terminal of the potential adjustment module. The fifth terminal of the current mirror module, the third terminal of the voltage divider module, and the third terminal of the potential adjustment module are all grounded. The fourth terminal of the potential adjustment module and the first terminal of the voltage divider module are both connected to the output terminal of the voltage regulator circuit. The current mirror module is used to feed the current back to the potential adjustment module by mirroring the current when the current at the output terminal of the voltage regulator circuit is greater than a preset value. The potential adjustment module is used to pull down the voltage at the output terminal of the voltage regulator circuit under the action of the current, so as to keep the output voltage of the voltage regulator circuit constant.

2. The voltage regulator circuit according to claim 1, characterized in that, The current mirror module includes: a first current mirror and a second current mirror; The first end of the first current mirror is used to connect to the power supply voltage, the second end of the first current mirror is connected to the first end of the second current mirror, the third end of the first current mirror is connected to the second end of the second current mirror and the first end of the potential adjustment module, and the fourth end of the first current mirror is connected to the second end of the potential adjustment module. The third terminal of the second current mirror is connected to the second terminal of the voltage divider module, and the fourth terminal of the second current mirror is grounded.

3. The voltage regulator circuit according to claim 2, characterized in that, The first current mirror includes: a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, a third P-type metal-oxide-semiconductor transistor, a fourth P-type metal-oxide-semiconductor transistor, a fifth P-type metal-oxide-semiconductor transistor, and a sixth P-type metal-oxide-semiconductor transistor; The source of the first P-type metal-oxide-semiconductor transistor, the source of the second P-type metal-oxide-semiconductor transistor, and the source of the third P-type metal-oxide-semiconductor transistor are all used to connect to the power supply voltage. The gate of the first P-type metal-oxide-semiconductor transistor is connected to the gate of the second P-type metal-oxide-semiconductor transistor, the gate of the third P-type metal-oxide-semiconductor transistor, and the drain of the first P-type metal-oxide-semiconductor transistor, respectively. The drain of the first P-type metal-oxide-semiconductor transistor is also connected to the source of the fourth P-type metal-oxide-semiconductor transistor. The gate of the fourth P-type metal-oxide-semiconductor transistor is connected to the gate of the fifth P-type metal-oxide-semiconductor transistor, the gate of the sixth P-type metal-oxide-semiconductor transistor, and the drain of the fourth P-type metal-oxide-semiconductor transistor, respectively. The drain of the fourth P-type metal-oxide-semiconductor transistor is also connected to the first end of the second current mirror. The drain of the second P-type metal-oxide-semiconductor transistor is connected to the source of the fifth P-type metal-oxide-semiconductor transistor. The drain of the fifth P-type metal-oxide-semiconductor transistor is connected to the second terminal of the second current mirror and the first terminal of the potential adjustment module. The drain of the third P-type metal-oxide-semiconductor transistor is connected to the source of the sixth P-type metal-oxide-semiconductor transistor. The drain of the sixth P-type metal-oxide-semiconductor transistor is connected to the second terminal of the potential adjustment module.

4. The voltage regulator circuit according to claim 3, characterized in that, The second current mirror includes: a first N-type metal-oxide-semiconductor transistor and a second N-type metal-oxide-semiconductor transistor; The source of the first N-type metal-oxide-semiconductor transistor and the source of the second N-type metal-oxide-semiconductor transistor are both grounded. The gate of the first N-type metal-oxide-semiconductor transistor and the gate of the second N-type metal-oxide-semiconductor transistor are both connected to the second terminal of the voltage divider module. The drain of the first N-type metal-oxide-semiconductor transistor is connected to the drain of the fourth P-type metal-oxide-semiconductor transistor, and the drain of the second N-type metal-oxide-semiconductor transistor is connected to the drain of the fifth P-type metal-oxide-semiconductor transistor.

5. The voltage regulator circuit according to claim 2, characterized in that, The potential adjustment module includes: a feedback component and a pull-down component; The control terminal of the feedback component is connected to the third terminal of the first current mirror and the second terminal of the second current mirror, respectively. The input terminal of the feedback component is connected to the control terminal of the pull-down component and the fourth terminal of the first current mirror, respectively. The input terminal of the pull-down component is connected to the output terminal of the voltage regulator circuit. The output terminals of the feedback component and the pull-down component are both grounded. The pull-down component is used to pull down the voltage at the output terminal of the voltage regulator circuit when the current at the output terminal of the voltage regulator circuit is greater than a preset value, so as to keep the output voltage of the voltage regulator circuit constant.

6. The voltage regulator circuit according to claim 5, characterized in that, The feedback component is a third type N-type metal-oxide-semiconductor transistor; The gate of the third N-type metal-oxide-semiconductor transistor is connected to the third terminal of the first current mirror and the second terminal of the second current mirror, respectively. The drain of the third N-type metal-oxide-semiconductor transistor is connected to the control terminal of the pull-down assembly and the fourth terminal of the first current mirror, respectively. The source of the third N-type metal-oxide-semiconductor transistor is grounded.

7. The voltage regulator circuit according to claim 6, characterized in that, The pull-down component is a fourth type N metal-oxide-semiconductor transistor; The gate of the fourth N-type metal-oxide-semiconductor transistor is connected to the fourth terminal of the first current mirror and the drain of the third N-type metal-oxide-semiconductor transistor, respectively. The drain of the fourth N-type metal-oxide-semiconductor transistor is connected to the output terminal of the voltage regulator circuit, and the source of the fourth N-type metal-oxide-semiconductor transistor is grounded.

8. The voltage regulator circuit according to claim 4, characterized in that, The voltage divider module includes: a first resistor and a second resistor; One end of the first resistor is connected to the output terminal of the voltage regulator circuit, and the other end of the first resistor is connected to the gate of the first N-type metal-oxide-semiconductor transistor, the gate of the second N-type metal-oxide-semiconductor transistor, and one end of the second resistor, respectively. The other end of the second resistor is grounded. The second resistor is used so that when the current at the output terminal of the voltage regulator circuit increases, the voltage across the second resistor increases synchronously.

9. An integrated chip, characterized in that, The integrated chip includes the voltage regulator circuit according to any one of claims 1-8.

10. An electronic device, characterized in that, The electronic device is equipped with the integrated chip of claim 9.