Bipolar driving circuit of full-bridge and half-bridge control converter
By using the bipolar drive circuit of the full-half-bridge control converter, and utilizing a single drive transformer T1 to output positive and negative voltages, combined with the energy discharge unit and signal output unit, the reliability problem of the MOSFET is solved, and the reliable turn-on and turn-off of the MOSFET and the high reliability of the full-half-bridge circuit are achieved.
Patent Information
- Application Number
- CN202520168629.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-24
- Publication Date
- 2026-02-24
- Estimated Expiration
- 2035-01-24
AI Technical Summary
Existing magnetically isolated drive circuits cannot guarantee reliable turn-on and turn-off of MOSFETs, especially in IGBT drive circuits which require negative voltage turn-off and cannot output dual polarity, resulting in increased switching transistor temperature and low reliability.
A bipolar drive circuit using a full-half-bridge control converter is employed. A single drive transformer T1 outputs positive and negative voltages, and reliable turn-on and turn-off of the MOSFET are achieved through an energy discharge unit and a signal output unit. The circuit includes a combination design of an energy discharge unit, a signal output unit, and a Zener diode.
This achieves reliable turn-on and turn-off of MOSFETs, avoids simultaneous conduction of upper and lower transistors, reduces costs, expands the operating frequency range, and improves the reliability and safety of the full-half-bridge circuit.
Smart Images
Figure CN223942590U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of full-half-bridge control converter technology, specifically a bipolar drive circuit for a full-half-bridge control converter. Background Technology
[0002] In existing technologies, isolation drivers are mainly divided into three types: bootstrap drivers, driver chip drivers, and magnetic isolation drivers. Among them, bootstrap drivers are the most commonly used driving solutions in bridge topologies, but their isolation withstand voltage is low, and they can only be used in conventional low-voltage driving applications. Driver chip drivers have high driving costs and withstand voltage limitations, resulting in low overall reliability. Magnetic isolation drivers are a solution that is applicable to all scenarios and has relatively low cost and size, but current solutions still have defects, such as the inability to output dual polarities and the inability to turn off under negative voltage, which cannot guarantee the reliable turn-on and turn-off of MOSFETs.
[0003] Specifically, commonly used magnetically isolated drive circuits include... Figure 1 As shown, Vsw is the input pulse drive signal, C1 is the input-side DC blocking capacitor, C2 is the output-side DC blocking capacitor, transformer T1 is the isolation drive transformer, and switch Q1 is the main switch of the main power circuit. This drive circuit only has positive voltage drive and no negative voltage turn-off, which cannot guarantee the reliable turn-off of MOSFETs and IGBTs. Especially in IGBT drive circuits, a certain negative voltage is required to ensure the reliable turn-off of IGBTs. At the same time, this type of drive circuit can only output a single channel and a single polarity, and cannot realize the drive of the switch of switching circuits such as full-bridge and half-bridge. After the drive signal disappears, the energy on the input-side capacitor C1 cannot be discharged immediately. The input-side capacitor C1 will oscillate with the inductance of the isolation drive transformer T1, causing the secondary-side switch to be mis-turned on. The output-side DC blocking capacitor C2 and the parasitic capacitance of the switch drive cannot discharge quickly, resulting in the switch not being able to turn off quickly. There are problems such as high temperature rise of the switch and low reliability, which may cause power supply damage and endanger personal safety. Utility Model Content
[0004] To address the problem that existing magnetic isolation drives cannot guarantee the reliable turn-on and turn-off of MOSFETs, this invention provides a bipolar drive circuit for a full-half-bridge control converter, ensuring the reliable turn-on and turn-off of MOSFETs.
[0005] The technical solution adopted by this utility model to solve the above-mentioned technical problems is as follows: a bipolar drive circuit for a full-half-bridge control converter, including a drive transformer T1, an input module connected to the primary winding of the drive transformer T1, and two drive modules connected to the secondary winding of the drive transformer T1.
[0006] The input module is used to receive pulse signals, generate drive signals based on the pulse signals, and send the drive signals to the primary winding of drive transformer T1.
[0007] The driving module is used to control the MOSFETs of the full-half-bridge control converter to turn on or off according to the driving signal. The driving module includes an energy discharge unit, a signal output unit, and a first Zener diode. The energy discharge unit is connected to the first Zener diode, the same-name terminal of the secondary winding, and the source of the MOSFET. The signal output unit is connected to the first Zener diode, the same-name terminal of the secondary winding, the opposite-name terminal of the secondary winding, the gate of the MOSFET, and the source of the MOSFET.
[0008] As a further optimization of the bipolar drive circuit of a full-half-bridge control converter of the utility model: the energy discharge unit includes a current-limiting resistor, a switching transistor, and a second Zener diode. One end of the current-limiting resistor is connected to the first Zener diode, the same-name terminal of the secondary winding, and the signal output unit. The other end of the current-limiting resistor is connected to the drain of the switching transistor. The gate of the switching transistor is connected to the opposite-name terminal of the secondary winding and the second Zener diode. The source of the switching transistor is connected to the second Zener diode, the signal output unit, and the source of the MOS transistor.
[0009] As a further optimization of the bipolar drive circuit of a full-half-bridge control converter of the utility model: the signal output unit includes a driving DC blocking capacitor and a MOS transistor parasitic capacitor. One end of the driving DC blocking capacitor is connected to the first Zener diode, the same-name terminal of the secondary winding and the energy discharge unit. The other end of the driving DC blocking capacitor is connected to the first Zener diode, the MOS transistor parasitic capacitor and the gate of the MOS transistor. The MOS transistor parasitic capacitor is connected to the energy discharge unit, the gate of the MOS transistor and the source of the MOS transistor.
[0010] As a further optimization of the bipolar drive circuit of a full-half-bridge control converter of the utility model: the secondary winding includes a first secondary winding and a second secondary winding, wherein one drive module is connected to the first secondary winding and the other drive module is connected to the second secondary winding.
[0011] As a further optimization of the bipolar drive circuit of the full-half-bridge control converter of the utility model: an input DC blocking capacitor is connected between the input module and the same-name terminal of the primary winding of the drive transformer T1.
[0012] As a further optimization of the bipolar drive circuit of the full-half-bridge control converter of the utility model: the pulse signal is set to two types, and the two pulse signals are complementary.
[0013] As a further optimization of the bipolar drive circuit of the full-half-bridge control converter of the utility model: the first Zener diode is set to a 3.3V Zener diode.
[0014] As a further optimization of the bipolar drive circuit of the full-half-bridge control converter of the utility model: the second Zener diode is set to a 15V Zener diode.
[0015] Compared with the prior art, the beneficial effects of this utility model are as follows:
[0016] This invention utilizes a single drive transformer T1, an upper transistor, and a lower transistor to output bipolar positive and negative voltages for driving. Simultaneously, in a full-half-bridge circuit, while one of the upper or lower transistors is conducting, it provides a continuous negative voltage to the other transistor, preventing simultaneous conduction and ensuring reliable turn-on and turn-off of the MOSFETs. Furthermore, this invention features simple and low-cost components, a wide operating frequency range, and high reliability, achieving the goal of complementary driving in a full-half-bridge circuit and guaranteeing continuous high-reliability operation of the product. Attached Figure Description
[0017] Figure 1 It is a circuit schematic diagram of existing technology;
[0018] Figure 2 This is the circuit schematic diagram of this utility model. Detailed Implementation
[0019] The technical solution of this utility model will be further described in detail below with reference to specific embodiments. Parts not described or disclosed in detail in the following embodiments of this utility model should be understood as prior art known or should be known by those skilled in the art.
[0020] A bipolar drive circuit for a full-half-bridge controlled converter, such as Figure 2As shown, the system includes a drive transformer T1, an input module connected to the primary winding of the drive transformer T1, and two drive modules connected to the secondary winding of the drive transformer T1. The input module receives pulse signals, generates drive signals based on the pulse signals, and transmits the drive signals to the primary winding of the drive transformer T1. Two types of pulse signals are provided, and these two pulse signals are complementary. Both pulse signals are generated by a drive chip or a self-excited circuit. The drive modules control the MOSFETs of the full-half-bridge control converter to turn on or off according to the drive signals. The drive modules include an energy discharge unit, a signal output unit, and a first Zener diode. The energy discharge unit is connected to the first Zener diode, the corresponding terminal of the secondary winding, and the source of the MOSFET. The energy dissipation unit includes a current-limiting resistor, a switching transistor, and a second Zener diode. One end of the current-limiting resistor is connected to the first Zener diode, the same-name terminal of the secondary winding, and the signal output unit; the other end of the current-limiting resistor is connected to the drain of the switching transistor, the gate of the switching transistor is connected to the opposite-name terminal of the secondary winding and the second Zener diode, and the source of the switching transistor is connected to the second Zener diode, the signal output unit, and the source of the MOSFET. The first Zener diode is configured as a 3.3V Zener diode, and the second Zener diode is configured as a 15V Zener diode.
[0021] The secondary winding includes a first secondary winding and a second secondary winding. One drive module is connected to the first secondary winding. Specifically, the drive DC blocking capacitor is connected to the same-name terminal of the first secondary winding as an output DC blocking filter. The other drive module is connected to the second secondary winding. The signal output unit includes a drive DC blocking capacitor and a MOSFET parasitic capacitance. One end of the drive DC blocking capacitor is connected to the first Zener diode, the same-name terminal of the secondary winding, and the energy discharge unit. The other end of the drive DC blocking capacitor is connected to the first Zener diode, the MOSFET parasitic capacitance, and the gate of the MOSFET. The MOSFET parasitic capacitance is connected to the energy discharge unit, the gate of the MOSFET, and the source of the MOSFET. One end of the first Zener diode is connected to the drive DC blocking capacitor, the MOSFET parasitic capacitance, and the gate of the MOSFET. The other end of the first Zener diode is connected to the drive DC blocking capacitor, the current limiting resistor, and the same-name terminal of the first secondary winding. The drive DC blocking capacitor is connected to the gate of the MOSFET as a MOSFET drive signal.
[0022] There are two driver modules, in Figure 2 In the diagram, the first Zener diode of the first driver module is represented by DZ1, also known as Zener diode DZ1; the DC blocking capacitor is represented by C2, also known as DC blocking capacitor C2; and the parasitic capacitance of the MOSFET is represented by C4, also known as MOSFET parasitic capacitance C4. In the second driver module, the first Zener diode is represented by DZ2, also known as Zener diode DZ2; the DC blocking capacitor is represented by C3, also known as DC blocking capacitor C3; and the parasitic capacitance of the MOSFET is represented by C5, also known as MOSFET parasitic capacitance C5. There are two MOSFETs... Figure 2In this diagram, Q3 and Q4 are used, also known as MOSFETs Q3 and Q4. The first drive module works with MOSFET Q3, and the second drive module works with MOSFET Q4. The drive transformer T1 isolates the primary and secondary sides, preventing insufficient isolation voltage, and enables floating drive of MOSFETs Q3 and Q4.
[0023] like Figure 2 As shown, this utility model also has two signal output units. The current-limiting resistor of the first energy discharge unit is represented by R1, also called resistor R1; the switching transistor is represented by Q1, also called switching transistor Q1; and the second Zener diode is represented by DZ3, also called Zener diode DZ3. The current-limiting resistor of the second energy discharge unit is represented by R2, also called current-limiting resistor R2; the switching transistor is represented by Q2, also called switching transistor Q2; and the second Zener diode is represented by DZ4, also called Zener diode DZ4.
[0024] Specifically, one end of the current-limiting resistor R1 is connected to the same-name terminal of the first secondary winding, and the other end is connected to the drain of the switching transistor Q1. The gate of the switching transistor Q1 is connected to the opposite-name terminal of the first secondary winding and the cathode of the Zener diode DZ3. The source of the switching transistor Q1 is connected to the anode of the Zener diode DZ3, the parasitic capacitance C4 of the MOSFET in the signal output unit of the first drive module, and the source of the MOSFET Q3. The value of the Zener diode DZ3 must be greater than the gate drive voltage of the switching transistor Q1 to provide the gate drive voltage for the switching transistor Q1. The Zener diode DZ1, Zener diode DZ3, current-limiting resistor R1, and switching transistor Q1 constitute the discharge circuit of the MOSFET Q3, serving as a path for energy discharge from the parasitic capacitance C4 of the MOSFET and as a drive signal for the discharge of the MOSFET Q3.
[0025] One end of the current-limiting resistor R2 is connected to the opposite-named terminal of the second secondary winding, and the other end is connected to the drain of the switching transistor Q2. The gate of the switching transistor Q2 is connected to the same-named terminal of the second secondary winding and the cathode of the Zener diode DZ4. The source of the switching transistor Q2 is connected to the anode of the Zener diode DZ4, the parasitic capacitance C5 of the MOSFET in the signal output unit of the second drive module, and the source of the MOSFET Q4. The Zener diode DZ2, the Zener diode DZ4, the current-limiting resistor R2, and the switching transistor Q2 constitute the discharge circuit of the MOSFET Q4, serving as a path for energy dissipation from the parasitic capacitance C5 and as a drive signal for the discharge of the MOSFET Q4.
[0026] An input DC blocking capacitor is connected between the input module and the corresponding terminal of the primary winding of the drive transformer T1. For example... Figure 2As shown, the input DC blocking capacitor is represented by C1 in the diagram, also known as capacitor C1. The input module includes pulse signal output circuits Vi1 and Vi2, which are complementary output circuits. One end of pulse signal output circuit Vi1 is connected to capacitor C1, and the other end is connected to the common ground of pulse signal output circuits Vi1 and Vi2. Pulse signal output circuit Vi2 is connected to the opposite-named terminal of the primary winding of drive transformer T1, and the other end is connected to the common ground of pulse signal output circuits Vi1 and Vi2. One end of capacitor C1 is connected to the output of pulse signal output circuit Vi1 to form input DC blocking filter, and the other end is connected to the same-named terminal of drive transformer T1, serving as the input signal for the primary winding of drive transformer T1.
[0027] like Figure 2 As shown, the switching transistor Q1, current-limiting resistor R1, Zener diodes DZ1 and DZ3, the parasitic capacitance C4 of the MOSFET, and MOSFET Q3 constitute the first negative voltage turn-off circuit. The current-limiting resistor R1 serves as the current-limiting resistor for the discharge circuit of the parasitic capacitance C4 of the MOSFET and MOSFET Q3, and also provides a negative voltage clamping loop path for the switching transistor Q1. When the winding voltage is negative, the gate and source of the switching transistor Q1 are clamped to the voltage of the Zener diode DZ3, thus turning on the switching transistor Q1. The driving DC blocking capacitor C2 serves as both the output signal DC blocking capacitor and the negative voltage turn-off clamping capacitor, providing a negative voltage for the MOSFET Q3 to turn off. The other end of the driving DC blocking capacitor C2 is connected to the anode of the Zener diode DZ1, one end of the MOSFET parasitic capacitance C4, and the gate of the MOSFET Q3, acting as the upper transistor output drive signal clamping Zener diode, clamping the driving DC blocking capacitor C2 to 3.3V. The other end of the current limiting resistor R1 is connected to the drain of the switching transistor Q1. The current limiting resistor R1 has a small value, which pulls the voltage of the driving DC blocking capacitor C2 to the source of the MOSFET Q3 when the switching transistor Q1 is turned on, making the gate-source voltage of the MOSFET Q3 -3.3V, thus achieving negative voltage turn-off. The source of the switching transistor Q1 is connected to the anode of the Zener diode DZ3, the other end of the parasitic capacitance C4 of the MOSFET, and the source of the MOSFET Q3. The parasitic capacitance C4 of the MOSFET simulates the gate-source parasitic capacitance of the MOSFET Q3. The drain of the MOSFET Q3 is connected to the positive terminal of the power supply of the half-bridge main power circuit and named Vin+. The source of the MOSFET Q3 is connected to the drain of the MOSFET Q4 and named Vmid.
[0028] like Figure 2As shown, the switching transistor Q2, current-limiting resistor R2, Zener diodes DZ2 and DZ4, the parasitic capacitance C5 of the MOSFET, and MOSFET Q4 constitute the second negative voltage turn-off circuit. The current-limiting resistor R2 serves as the current-limiting resistor for the discharge circuit of the parasitic capacitance C5 of the MOSFET and MOSFET Q4, while also providing a negative voltage clamping loop path for the switching transistor Q2. The value of Zener diode DZ4 must be greater than the gate drive voltage of the switching transistor Q2 to provide the gate drive voltage for the switching transistor Q2 and a discharge loop for the parasitic capacitance C5 of the MOSFET. When the winding voltage is positive, the gate and source of the switching transistor Q2 are clamped to the voltage of Zener diode DZ4, thus turning on the switching transistor Q2. The driving DC blocking capacitor C3 serves as both the output signal DC blocking capacitor and the negative voltage turn-off clamping capacitor, providing a negative voltage for the MOSFET Q4 to turn off. The other end of the driving DC blocking capacitor C3 is connected to the anode of the Zener diode DZ2, one end of the MOSFET parasitic capacitance C5, and the gate of the MOSFET Q4. The Zener diode DZ2 is a 3.3V Zener diode, which acts as the lower-transistor output drive signal clamping Zener diode, clamping the driving DC blocking capacitor C3 to 3.3V. The other end of the current limiting resistor R2 is connected to the drain of the switching transistor Q2. The current limiting resistor R2 has a small value. When the switching transistor Q2 is turned on, it pulls the voltage of the driving DC blocking capacitor C3 to the source of the MOSFET Q4, making the gate-source voltage of the MOSFET Q4 -3.3V, thus achieving negative voltage turn-off. The source of switching transistor Q2 is connected to the anode of Zener diode DZ4, the other end of the parasitic capacitance C5 of MOSFET, and the source of MOSFET Q4. The parasitic capacitance C5 of MOSFET simulates the gate-source parasitic capacitance of MOSFET Q4. The drain of MOSFET Q4 is connected to the source of MOSFET Q3 and named Vmid. The source of MOSFET Q4 is connected to the negative power supply terminal of the half-bridge main power circuit and named Vin-.
[0029] This invention utilizes a single drive transformer T1 to provide bipolar drive with both positive and negative voltages. Simultaneously, in a full-half-bridge circuit, while one transistor is conducting, it provides a continuous negative voltage to turn off the other, avoiding the problem of simultaneous conduction of both transistors. This invention features simple and low-cost components, a wide operating frequency range, and high reliability, achieving the goal of complementary drive in a full-half-bridge circuit and ensuring continuous high-reliability operation of the product.
[0030] The principle of this utility model is as follows:
[0031] The pulse signal output circuit Vi1 and the pulse signal output circuit Vi2 are complementary output circuits. When the pulse signal output circuit Vi1 is at a high level, the pulse signal output circuit Vi2 is at a low level, the capacitor C1 is charged, and the voltage direction is positive on the left and negative on the right. At this time, the same-name terminal of the primary side of the drive transformer T1 is positive, and the opposite-name terminal is negative. The voltage direction of the primary winding is positive at the top and negative at the bottom.
[0032] The same-name terminal of the first secondary winding of the drive transformer T1 is in the same direction as the same-name terminal of the primary winding. The voltage of the first secondary winding of the drive transformer T1 is in the same direction as the voltage of the primary winding, both being positive at the top and negative at the bottom. The voltage of the first secondary winding charges the drive DC blocking capacitor C2 and the parasitic capacitance C4 of the MOSFET. The drive DC blocking capacitor C2 is connected in parallel with the Zener diode DZ1, which is a 3.3V Zener diode. After the voltage of the drive DC blocking capacitor C2 is charged to 3.3V, it is clamped. The voltage of the parasitic capacitance C4 of the MOSFET Q3 rises, and the MOSFET Q3 turns on.
[0033] The same-name terminal of the second secondary winding of the drive transformer T1 is in the same direction as the same-name terminal of the primary winding, and the voltage of the second secondary winding of the drive transformer T1 is consistent with the voltage of the primary winding, both being positive at the top and negative at the bottom. The Zener diode DZ4 is generally selected as a 15V Zener diode. The driving voltage of the second secondary winding of the driving transformer T1 is 12V, which is less than the breakdown voltage of the Zener diode DZ4. The voltage of the Zener diode DZ4 is clamped to the winding driving voltage of 12V. The Zener diode DZ4 is connected in parallel with the gate and source of the switching transistor Q2. The gate and source voltage of the switching transistor Q2 is also clamped to 12V, and the switching transistor Q2 is turned on. The driving DC blocking capacitor C3 is connected to the source of the MOSFET Q4 through the current limiting resistor R2 and the gate and source of the switching transistor Q2. The current limiting resistor R2 has a small value, which is generally 1 ohm. It can be regarded as the driving DC blocking capacitor C3 being directly connected to the source of the MOSFET Q4. The gate and source voltage of the MOSFET Q4 is clamped to the voltage of the driving DC blocking capacitor C3, which is -3.3V, realizing negative voltage turn-off.
[0034] When the switching transistor Q2 is turned on, the parasitic capacitance C5 of the MOSFET is rapidly discharged through the Zener diode DZ2, the current limiting resistor R2, and the drain and source of the switching transistor Q2, thereby achieving reliable turn-off of the MOSFET Q4.
[0035] When the pulse signal output circuit Vi1 is at a low level, the pulse signal output circuit Vi2 is at a high level, capacitor C1 discharges, and the voltage direction changes from left positive and right negative to left negative and right positive. At this time, the same-name terminal of the drive transformer T1 is negative and the opposite-name terminal is positive, and the voltage direction of the primary winding changes from top positive and bottom negative to top negative and bottom positive.
[0036] The secondary winding of the drive transformer T1 has the same direction as the primary winding. The voltage of the secondary winding of the drive transformer T1 is in the same direction as the primary voltage, both being negative at the top and positive at the bottom. The voltage of the secondary winding charges the DC blocking capacitor C3 and the parasitic capacitance C5 of the MOSFET. The DC blocking capacitor C3 is connected in parallel with the Zener diode DZ2, which is a 3.3V Zener diode. After the voltage of the DC blocking capacitor C3 is charged to 3.3V, it is clamped. The voltage of the parasitic capacitance C5 of the MOSFET rises, and the MOSFET Q4 turns on.
[0037] The primary winding of the first secondary winding of the drive transformer T1 has the same direction as the primary winding, and the voltage of the primary winding is consistent with the voltage of the primary winding, both being negative at the top and positive at the bottom. The Zener diode DZ3 is typically a 15V Zener diode. The drive voltage of the primary winding of the drive transformer T1 is 12V, which is less than the breakdown voltage of the Zener diode DZ3. The voltage of the Zener diode DZ3 is clamped to the winding drive voltage of 12V. The Zener diode DZ3 is connected in parallel with the gate and source of the switching transistor Q1, and the gate and source voltage of the switching transistor Q1 is also clamped to 12V, turning on the switching transistor Q1. The drive DC blocking capacitor C2 is connected to the source of the MOSFET Q3 through the current-limiting resistor R1 and the gate and source of the switching transistor Q1. The current-limiting resistor R1 has a small value, typically 1 ohm, and can be considered as C2 being directly connected to the source of the MOSFET Q3. The gate and source voltage of the MOSFET Q3 is clamped to the voltage of the drive DC blocking capacitor C2, which is -3.3V, achieving negative voltage turn-off.
[0038] When the switching transistor Q1 is turned on, the parasitic capacitance C4 of the MOSFET is rapidly discharged through the Zener diode DZ1, the current limiting resistor R1, and the drain and source of the switching transistor Q1, thereby achieving reliable turn-off of the MOSFET Q3.
[0039] The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A bipolar drive circuit for a full-half-bridge controlled converter, characterized in that: It includes a drive transformer T1, an input module connected to the primary winding of the drive transformer T1, and two drive modules connected to the secondary winding of the drive transformer T1. The input module is used to receive pulse signals, generate drive signals based on the pulse signals, and send the drive signals to the primary winding of drive transformer T1. The driving module is used to control the MOSFETs of the full-half-bridge control converter to turn on or off according to the driving signal. The driving module includes an energy discharge unit, a signal output unit, and a first Zener diode. The energy discharge unit is connected to the first Zener diode, the same-name terminal of the secondary winding, and the source of the MOSFET. The signal output unit is connected to the first Zener diode, the same-name terminal of the secondary winding, the opposite-name terminal of the secondary winding, the gate of the MOSFET, and the source of the MOSFET.
2. The bipolar drive circuit of the full-half-bridge controlled converter as described in claim 1, characterized in that: The energy discharge unit includes a current-limiting resistor, a switching transistor, and a second Zener diode. One end of the current-limiting resistor is connected to the first Zener diode, the same-name terminal of the secondary winding, and the signal output unit. The other end of the current-limiting resistor is connected to the drain of the switching transistor. The gate of the switching transistor is connected to the opposite-name terminal of the secondary winding and the second Zener diode. The source of the switching transistor is connected to the second Zener diode, the signal output unit, and the source of the MOS transistor.
3. The bipolar drive circuit of the full-half-bridge controlled converter as described in claim 1, characterized in that: The signal output unit includes a driving DC blocking capacitor and a MOS transistor parasitic capacitor. One end of the driving DC blocking capacitor is connected to the first Zener diode, the same-name terminal of the secondary winding, and the energy discharge unit. The other end of the driving DC blocking capacitor is connected to the first Zener diode, the MOS transistor parasitic capacitor, and the gate of the MOS transistor. The MOS transistor parasitic capacitor is connected to the energy discharge unit, the gate of the MOS transistor, and the source of the MOS transistor.
4. The bipolar drive circuit of the full-half-bridge controlled converter as described in claim 1, characterized in that: The secondary winding includes a first secondary winding and a second secondary winding, wherein one of the drive modules is connected to the first secondary winding and the other drive module is connected to the second secondary winding.
5. The bipolar drive circuit of the full-half-bridge controlled converter as described in claim 1, characterized in that: An input DC blocking capacitor is connected between the input module and the corresponding terminal of the primary winding of the drive transformer T1.
6. The bipolar drive circuit of the full-half-bridge controlled converter as described in claim 1, characterized in that: The pulse signal is configured in two types, and the two pulse signals are complementary.
7. The bipolar drive circuit of the full-half-bridge controlled converter as described in claim 1, characterized in that: The first Zener diode is set to a 3.3V Zener diode.
8. The bipolar drive circuit of the full-half-bridge controlled converter as described in claim 2, characterized in that: The second Zener diode is set to a 15V Zener diode.