Photoelectric device and display device

Abstract

The utility model discloses a photoelectric device and a display device, and the photoelectric device comprises an anode and a cathode which are disposed at an interval in a first direction, a hole function layer disposed at one side of the anode, an electronic function layer disposed at one side of the cathode, and an insulating layer which is disposed between the anode and the cathode and extends to a position between the electronic function layer and the hole function layer. The electron function layer and the hole function layer are arranged on the same side of the insulating layer at intervals in the first direction, the hole function layer and the electron function layer are respectively connected with the light-emitting layer, and in the second direction perpendicular to the first direction, the anode and the light-emitting layer are arranged at intervals. In the second direction, the cathode and the light-emitting layer are arranged at intervals, and the electronic function layer is located between the cathode and the light-emitting layer, so that emergent light of the light-emitting layer does not need to pass through other function layers, and the light-emitting efficiency of the photoelectric device is effectively improved.

Description

Technical Field

[0001] This application relates to the field of optoelectronic technology, specifically to an optoelectronic device and display apparatus. Background Technology

[0002] Optoelectronic devices refer to a class of devices made using the photoelectric effect of semiconductors, including but not limited to optoelectronic devices, solar cells, or photodetectors. In existing technologies, taking light-emitting devices as an example, light-emitting devices include, but are not limited to, Organic Light-Emitting Diodes (OLEDs) and Quantum Dot Light-Emitting Diodes (QLEDs). OLEDs or QLEDs have a "sandwich" structure, comprising an anode, a cathode, and a light-emitting layer. The anode and cathode are positioned opposite each other, and the light-emitting layer is positioned between the anode and cathode. The light-emitting principle of OLEDs or QLEDs is as follows: electrons are injected from the cathode into the light-emitting region, and holes are injected from the anode into the light-emitting region. Electrons and holes recombine in the light-emitting region to form excitons, which then release photons through radiative transitions, thereby emitting light.

[0003] After years of development, optoelectronic devices have made significant progress in performance indicators and demonstrated enormous application potential. However, shortcomings still exist, such as the need for further improvement in device efficiency. Therefore, how to further improve the device efficiency of optoelectronic devices is of great significance to their application and development. Utility Model Content

[0004] In view of the shortcomings of the prior art, this application provides an optoelectronic device and a display device.

[0005] In a first aspect, this application provides an optoelectronic device, comprising:

[0006] An anode and a cathode are spaced apart in the first direction;

[0007] A hole-functional layer is disposed on one side of the anode;

[0008] An electronic functional layer is disposed on one side of the cathode and is disposed on the same side as the hole functional layer and spaced apart in the first direction;

[0009] An insulating layer is disposed between the anode and the cathode, and extends between the electronic functional layer and the hole functional layer; and

[0010] A light-emitting layer is disposed on one side of the insulating layer;

[0011] The hole functional layer and the electron functional layer are respectively connected to the light-emitting layer; in a second direction perpendicular to the first direction, the anode and the light-emitting layer are spaced apart, and the hole functional layer is located between the anode and the light-emitting layer; in the second direction, the cathode and the light-emitting layer are spaced apart, and the electron functional layer is located between the cathode and the light-emitting layer.

[0012] In a second aspect, this application provides a display device, the display device including a display panel, the display panel including a plurality of pixel units arranged in an array, each pixel unit independently including an optoelectronic device as described in the first aspect.

[0013] This application provides an optoelectronic device and a display apparatus, which have the following technical advantages:

[0014] In the optoelectronic device provided in this application, the light-emitting layer is disposed on the top or bottom of the anode, cathode, hole functional layer and electron functional layer, which enables the light emitted from the light-emitting layer to pass through other functional layers, effectively improving the luminous efficiency of the optoelectronic device. In addition, the use of an insulating layer to isolate the electron functional layer and the hole functional layer can form a single-loop carrier movement path, effectively improving the problem of carrier injection imbalance, which is beneficial to improving the device life and performance stability of the optoelectronic device. Attached Figure Description

[0015] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0016] Figure 1 This is a schematic diagram of the structure of a first type of optoelectronic device with an upright structure provided in the embodiments of this application.

[0017] Figure 2 This is a schematic diagram of the structure of a first type of optoelectronic device with an inverted structure provided in the embodiments of this application.

[0018] Figure 3 This is a schematic diagram of the structure of a second type of optoelectronic device with an upright structure provided in the embodiments of this application.

[0019] Figure 4 This is a schematic diagram of the structure of a second type of optoelectronic device with an inverted structure provided in the embodiments of this application.

[0020] Figure 5 This is a schematic diagram of the structure of a third type of optoelectronic device with an upright structure provided in the embodiments of this application.

[0021] Figure 6 This is a schematic diagram of the structure of a third type of optoelectronic device with an inverted structure provided in the embodiments of this application.

[0022] Figure 7 This is a schematic diagram of the structure of an optoelectronic device provided as a comparative example of this application.

[0023] The attached figures are labeled as follows:

[0024] 10. Optoelectronic device; 100. Glass substrate; 101. Anode; 102. Cathode; 103. Light-emitting layer; 104. Insulating layer; 105. Hole functional layer; 106. Electron functional layer; 107. Encapsulation layer; 1031. Base; 1032. Protrusion; 1033. First region; 1034. Second region; 1051. Hole injection layer; 1052. Hole transport layer; 1061. Electron injection layer; 1062. Electron transport layer; 10521. First notch; 10621. Second notch. Detailed Implementation

[0025] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those familiar to those skilled in the art. Furthermore, any methods and materials similar to or equivalent to those described herein may be applied to this invention. The preferred embodiments and materials described herein are for illustrative purposes only and do not limit the scope of this application.

[0027] It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of embodiments. The various embodiments of this application may exist in a range format. It should be understood that the description in a range format is merely for convenience and simplicity and should not be construed as a rigid limitation on the scope of this utility model. Therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is indicated herein, it means including any referenced number (fraction or integer) within the indicated range.

[0028] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the optoelectronic device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the optoelectronic device. The terms "first," "second," "third," etc., are used merely as indications and do not impose numerical requirements or establish a sequence.

[0029] In this application, descriptions such as "layer A is formed on one side of layer B," "layer A is formed on the side of layer B away from layer C," or similar expressions can mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, i.e., layer A and layer B are in direct contact; or they can mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, i.e., other spacer structures can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B" or "layer A is disposed on the side of layer B away from layer C" can mean that layer A and layer B are in direct contact, or that other spacer structures are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can mean that layer A and layer B are in direct contact and layer A and layer C are in direct contact, or layer A and layer B are in direct contact and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and layer A and layer C are in direct contact.

[0030] The term "including" means "including but not limited to". The term "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. A and B can be singular or plural. The term "at least one" means one or more, and "more than one" means two or more. The terms "at least one", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of a single or plural type. For example, "at least one of a, b, or c" or "at least one of a, b, and c" can be expressed as: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can each be a single or multiple type.

[0031] The term "average particle size" refers to the area-average particle size of a particle swarm. Area-average particle size is calculated by dividing the total volume of the particle swarm by its total area, which is the reciprocal of the surface area per unit volume. If an imaginary swarm of particles with uniform size is used to replace the original swarm, and the total volume and area of ​​this imaginary swarm are identical to the original swarm, then the diameter of this imaginary swarm is the area-average particle size of the original swarm. Area-average particle size can be obtained through statistical analysis, using transmission electron microscopy to statistically analyze the particle size of each particle in the swarm.

[0032] In this application, the thickness of the thin film refers to the average thickness of the thin film, and the thickness of a certain functional layer refers to the average thickness of the functional layer. The thickness is obtained by measuring a step tester.

[0033] The terms “combinations thereof,” “any combination thereof,” and “any combination thereof” as used in this application include all suitable combinations of any two or more of the listed items.

[0034] Based on this, embodiments of this application provide an optoelectronic device, such as... Figures 1 to 6 As shown, the optoelectronic device 10 includes an anode 101, a cathode 102, a light-emitting layer 103, an insulating layer 104, a hole functional layer 105, and an electronic functional layer 106. The anode 101 and cathode 102 are spaced apart in a first direction; the hole functional layer 105 is disposed on one side of the anode 101, and the electronic functional layer 106 is disposed on one side of the cathode 102, with the electronic functional layer 106 and hole functional layer 105 on the same side and spaced apart in the first direction; the insulating layer 104 is disposed between the anode 101 and cathode 102, and extends between the electronic functional layer 106 and hole functional layer 105; the light-emitting layer 103 is disposed on one side of the insulating layer 104. The electronic functional layer 106 and the hole functional layer 105 are respectively connected to the light-emitting layer 103. In the second direction perpendicular to the first direction, the anode 101 and the light-emitting layer 103 are spaced apart, and the hole functional layer 105 is located between the anode 101 and the light-emitting layer 103. In the second direction, the cathode 102 and the light-emitting layer 103 are spaced apart, and the electronic functional layer 106 is located between the cathode 102 and the light-emitting layer 103.

[0035] In the optoelectronic device 10 of this application embodiment, the light-emitting layer 103 is disposed on the top (for upright optoelectronic devices) or bottom (for inverted optoelectronic devices) of the anode 101, cathode 102, hole functional layer 105 and electron functional layer 106, which enables the light emitted by the light-emitting layer 103 to pass through other functional layers, effectively improving the luminous efficiency of the optoelectronic device 10; in addition, the use of the insulating layer 104 to isolate the electron functional layer 106 and the hole functional layer 105 can form a single-loop carrier movement path, effectively improving the problem of carrier injection imbalance, which is beneficial to improving the device life and performance stability of the optoelectronic device 10.

[0036] It should be noted that the spacing between the anode 101 and the light-emitting layer 103, and the spacing between the cathode 102 and the light-emitting layer 103, helps to control the thickness of the light-emitting layer 103 and improve the problem of carrier injection imbalance. The reason is that if the light-emitting layer 103 covers the anode 101 and the cathode 102, the thickness of the light-emitting layer 103 in the second direction needs to be greater than the thickness of the hole functional layer 105 in the second direction, and the thickness of the light-emitting layer 103 in the second direction needs to be greater than the thickness of the electron functional layer 106 in the second direction. Furthermore, the carriers will move along one or more unexpected paths, which may lead to excessive hole injection or excessive electron injection.

[0037] There may be no gap or a gap between the insulating layer 104 and the anode 101, between the insulating layer 104 and the cathode 102, between the insulating layer 104 and the hole functional layer 105, and between the insulating layer 104 and the electronic functional layer 106. To further improve the structural strength of the optoelectronic device 10, in some embodiments of this application, the insulating layer 104 fills the space between the anode 101 and the cathode 102, and the insulating layer 104 fills the space between the hole functional layer 105 and the electronic functional layer 106.

[0038] In order to further improve the compactness and aesthetics of the overall structure of the optoelectronic device 10, and to facilitate the control of the thickness of the light-emitting layer 103 in the second direction, in some embodiments of this application, the side of the anode 101 away from the hole functional layer 105, the side of the cathode 102 away from the electron functional layer 106, and the side of the insulating layer 104 away from the light-emitting layer 103 are flush.

[0039] In order to further improve the thickness uniformity of the light-emitting layer 103 in the second direction, in some embodiments of this application, the sum of the thicknesses of the anode 101 and the hole functional layer 105 in the second direction is the first thickness, and the sum of the thicknesses of the cathode 102 and the electron functional layer 106 in the second direction is the second thickness. The ratio between the first thickness and the second thickness is 1:(0.8~1.2), for example, the first thickness and the second thickness are the same.

[0040] In some embodiments of this application, see further reference. Figure 1 and Figure 2 The light-emitting layer 103 is stacked on the side of the hole functional layer 105 away from the anode 101, and the light-emitting layer 103 is stacked on the side of the electron functional layer 106 away from the cathode 102.

[0041] Furthermore, the side of the hole functional layer 105 away from the anode 101, the side of the electron functional layer 106 away from the cathode 102, and the side of the insulating layer 104 close to the light-emitting layer 103 are flush, so as to further improve the thickness uniformity of the light-emitting layer 103 in the second direction and promote carrier injection balance.

[0042] In other embodiments of this application, see further reference. Figures 3 to 6 The light-emitting layer 103 includes a base 1031 and a protrusion 1032 connected to each other. An electronic functional layer 106 and a hole functional layer 105 are respectively connected to the protrusion 1032 and to the base 1031. In a second direction, the protrusion 1032 is located between the base 1031 and the insulating layer 104, and in a first direction, the protrusion 1032 is located between the electronic functional layer 106 and the hole functional layer 105, so that the light-emitting layer 103 has two carrier recombination paths, namely a first carrier recombination path and a second carrier recombination path. The first carrier recombination path is located in the protrusion 1032, and the second carrier recombination path is located in the base 1031.

[0043] Continue reading Figures 3 to 6 , Figure 3The arrows indicate the first and second carrier recombination paths. Since the length of the protrusion 1032 in the first direction is less than the length of the base 1031 in the first direction, the second carrier recombination path is longer than the first carrier recombination path. It can be understood that the longer the carrier recombination path, the greater the resistance. That is, the resistance corresponding to the second carrier recombination path is greater than the resistance corresponding to the first carrier recombination path. Therefore, when the optoelectronic device 10 is first powered on, most of the electrons and holes will recombine and emit light through the first carrier recombination path, which has a shorter path and lower resistance. The first region 1033 becomes the recombination and emission center, and the first region 1033 has the highest emission brightness. Other regions in the emission layer 103 only have a small number of electrons and holes recombine and emit light, becoming low-brightness regions or not emitting light at all. As the brightness of the first region 1033 decreases, the resistance increases, the voltage increases, and the luminescent material of the first region 1033 degrades, the ratio of the resistances corresponding to the first carrier recombination path and the second carrier recombination path also changes. When the resistance corresponding to the first carrier recombination path is greater than the resistance corresponding to the second carrier recombination path, most of the electrons and holes will recombine and emit light through the second carrier recombination path, and the second region 1034 becomes the recombination and emission center. The luminescence brightness of the second region 1034 is the highest, thereby improving the high brightness maintenance time of the optoelectronic device 10, and improving the maximum brightness and device life of the optoelectronic device 10.

[0044] To further improve the structural compactness of the optoelectronic device 10 and reduce the fabrication difficulty of the optoelectronic device 10, reference continues to be made to some embodiments of this application. Figures 3 to 6 The protrusion 1032 is stacked on the side of the insulating layer 104 near the light-emitting layer 103.

[0045] In some embodiments of this application, see further reference. Figures 3 to 6 In the second direction, the anode 101 and the base 1031 are spaced apart, and the hole functional layer 105 is located between the anode 101 and the base 1031.

[0046] In some embodiments of this application, see further reference. Figures 3 to 6 In the second direction, the anode 101 and the base 1031 are spaced apart, and the electronic functional layer 106 is located between the cathode 102 and the base 1031.

[0047] In some embodiments of this application, see further reference. Figure 5 and Figure 6 The hole functional layer 105 is provided with a first notch 10521 that is adapted to and stacked with the protrusion 1032 to extend the length of the first carrier recombination path, increase the area of ​​the first region 1033, improve the recombination rate of electrons and holes in the first region 1033, further improve the device life of the optoelectronic device 10, and at the same time, it is beneficial to reduce the overall thickness of the optoelectronic device 10 in the second direction.

[0048] In some embodiments of this application, see further reference. Figure 5 and Figure 6 The electronic functional layer 106 is provided with a second notch 10621 that is adapted to and stacked with the protrusion 1032 to extend the length of the first carrier recombination path, increase the area of ​​the first region 1033, improve the recombination rate of electrons and holes in the first region 1033, further improve the device life of the optoelectronic device 10, and at the same time, it is beneficial to reduce the overall thickness of the optoelectronic device 10 in the second direction.

[0049] In some embodiments of this application, the ratio between the thickness of the protrusion 1032 in the second direction and the thickness of the base 1031 in the second direction is 1:(1 to 1.5), for example, 1:1, 1:1.1, 1:1.2, 1:1.3, 1:1.4, 1:1.5 or any two of the aforementioned values. The ratio between the length of the base 1031 in the first direction and the length of the protrusion 1032 in the first direction is 1:(0.5 to 0.75), for example, 1:0.5, 1:0.6, 1:0.75 or any two of the aforementioned values. This is to ensure that the first region 1033 and the second region 1034 have more suitable high brightness maintenance time, avoiding excessively short or long high brightness maintenance time in a certain region, and further improving the device life and performance stability of the optoelectronic device 10.

[0050] To further improve the structural symmetry of the optoelectronic device 10, thereby further promoting carrier injection balance, further reference is made to some embodiments of this application. Figure 5 and Figure 6 The hole functional layer 105 is provided with a first notch 10521 that is adapted to and stacked with the protrusion 1032, and the electronic functional layer 106 is provided with a second notch 10621 that is adapted to and stacked with the protrusion 1032.

[0051] Optionally, the ratio between the thickness of the hole functional layer 105 in the second direction and the depth of the first notch 10521 in the second direction is 1:(0.2 to 0.5), for example, it can be 1:0.2, 1:0.3, 1:0.4, 1:0.5 or any two of the aforementioned values, which can ensure that the hole functional layer 105 has good hole transport and / or hole injection capabilities while enabling the first region 1033 to have a suitable high brightness maintenance time.

[0052] Optionally, the ratio between the thickness of the electronic functional layer 106 in the second direction and the depth of the second notch 10621 in the second direction is 1:(0.2 to 0.5), for example, it can be 1:0.2, 1:0.3, 1:0.4, 1:0.5 or any two of the aforementioned values, which can ensure that the electronic functional layer 106 has good electron transport and / or electron injection capabilities while enabling the first region 1033 to have a suitable high brightness maintenance time.

[0053] To further improve the structural symmetry of the optoelectronic device 10, thereby further promoting carrier injection balance, further reference is made to some embodiments of this application. Figure 5 and Figure 6 The depth of the first notch 10521 in the second direction is the same as the depth of the second notch 10621 in the second direction.

[0054] In some embodiments of this application, see further reference. Figures 1 to 6 The material of the light-emitting layer 103 includes one or more of organic light-emitting materials and quantum dots, and the thickness of the light-emitting layer 103 in the second direction is, for example, 10 nm to 100 nm.

[0055] Among them, organic light-emitting materials include, but are not limited to, one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridinium(III), 4,4',4”-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid local charge transfer excited state materials, excitopolymer light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0056] Quantum dots include, but are not limited to, one or more of red, green, and blue quantum dots, and include, but are not limited to, single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, wherein the shell of the core-shell quantum dot has one or more layers. The average particle size of the quantum dots can be, for example, 2 nm to 30 nm, with examples being 2 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, or any two of the aforementioned values.

[0057] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dot, the material of the core of the core-shell quantum dot, or the material of the shell of the core-shell quantum dot includes, but is not limited to, at least one of group II-VI compounds, group III-V compounds, group III-VI compounds, group IV-VI compounds, or group I-III-VI compounds. Among them, the II-VI group compounds include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. III-VI group compounds include, but are not limited to, one or more of In2S3, In2Se3, InGaS3, and InGaSe3. III-V group compounds include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. Group IV-VI compounds include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. Group I-III-VI compounds include, but are not limited to, one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2.

[0058] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. It should be noted that in the core-shell structured quantum dots, " / " represents a shell. Taking CdSe / CdSeS / CdS as an example, CdSe is the quantum dot core, CdSeS is the first shell, and CdS is the second shell.

[0059] For inorganic perovskite quantum dots, the general structural formula is QJT3, where Q is Cs. + J is a divalent metal cation, and each occurrence of J is independently selected from Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ T is a halide anion, and each time T appears, it is independently selected from Cl. - ,Br - Or I - .

[0060] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is LJT3, where L is a formamidinyl group, and the range of choices for J and T is as described above.

[0061] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is GJT3, where B is selected from organic amine cations, including but not limited to CH3(CH2). n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+(n≥2), the selection range of J and T is described above. When n=2, the inorganic metal halide octahedrons JT64- are connected by a common vertex, the metal cation M is located at the body center of the halogen octahedron, and the organic amine cation B fills the gaps between the octahedrons, forming an infinitely extended three-dimensional structure; when n>2, the inorganic metal halide octahedrons JT64- connected by a common vertex extend in the two-dimensional direction to form a layered structure, with organic amine cation bilayers (protonated monoamines) or organic amine cation monolayers (protonated diamines) inserted between the layers, and the organic and inorganic layers overlap to form a stable two-dimensional layered structure.

[0062] It is understandable that ligands can also be attached to the surface of quantum dots. These ligands can be common in the field, including but not limited to C1 to C2. 30 aliphatic carboxylic acid ligands, C6-C 30 Aromatic carboxylic acid ligands, C1-C 30 Aliphatic thiol ligands, C6-C 30 Thiol aromatic ligands, C1-C 30 fatty amine ligands, C6-C 30 Aromatic amine ligands, C1-C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6-C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0063] Among them, C1~C 30 The aliphatic carboxylic acid ligands include, but are not limited to, one or more of the following: octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, teicosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; C6~C 30 Aromatic carboxylic acid ligands include, but are not limited to, one or more of benzoic acid, biphenylic acid, and 1-naphthoic acid. (C1-C2) 30 The aliphatic thiol ligands include, but are not limited to, one or more of hexamethylenetetramine, octanethiol, nonanethiol, decanethiol, undecylthiol, dodecathiol, hexadecylthiol, and octadecylthiol, C6–C6. 30 Thiol aromatic ligands include, but are not limited to, one or more of benzenethiol, triphenylmethanethiol, and p-terphenyl-4,4”-dithiol. C1~C 30 The aliphatic amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, trideamine, tetradeamine, pentadecylamine, hexadecylamine, heptadecanamine, octadecylamine, and oleylamine, C6-C6. 30The aromatic amine ligands include, but are not limited to, one or more of aniline, indenepropylamine, 4-octylaniline, and benzidine. (C1-C2) 30 The aliphatic phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6–C6. 30 Aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphineethyl)phenylphosphine and triphenylphosphine oxide, C6-C6. 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. Halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0064] In the optoelectronic device 10 of this application embodiment, the electronic functional layer 106 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 106 in the second direction is 10nm to 100nm, for example, 40nm to 70nm. As an example, the electronic functional layer 106 is a single-layer structure and is an electron transport layer.

[0065] When the electronic functional layer 106 has a multilayer structure, it may include, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For an electronic functional layer 106 including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, with the hole blocking layer closer to the anode 101 than the electron injection layer. For an electronic functional layer 106 including both an electron transport layer and a hole blocking layer, the hole blocking layer is closer to the anode 101 than the electron transport layer. For an electronic functional layer 106 including both an electron injection layer and an electron transport layer, the electron transport layer is closer to the anode 101 than the electron injection layer. See also: Figures 1 to 6 The electronic functional layer 106 includes an electron injection layer 1061 and an electron transport layer 1062 stacked sequentially, with the electron injection layer 1061 being closer to the cathode 102 than the electron transport layer 1062.

[0066] In some embodiments of this application, the material of the electronic functional layer 106 includes one or more of a first inorganic material and a second inorganic material. The first inorganic material includes one or more of an undoped first metal oxide and a group IIB-VIA semiconductor material. The undoped first metal oxide is selected from one or more of ZnO, TiO2, and SnO2, and the group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, and CdS. The second inorganic material includes one or more doped first compounds, the general formula of which is A. (1-x) Mx O, where 0 < x ≤ 0.5, A and M are not the same, and A and M are independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In and Y.

[0067] In some embodiments of this application, the doped first compound is selected from Zn. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where x is greater than 0 and not greater than 0.2 each time it appears.

[0068] In the optoelectronic device 10 of this application embodiment, the hole functional layer 105 can be a single-layer structure or a multi-layer structure. The thickness of the hole functional layer 105 is, for example, 10nm to 100nm, or 40nm to 70nm. When the hole functional layer 105 is a multi-layer structure, the hole functional layer 105 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For a hole functional layer 105 including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode 101 than the electron blocking layer. For a hole functional layer 105 including a hole transport layer and an electron blocking layer, the hole transport layer is closer to the anode 101 than the electron blocking layer. For a hole functional layer 105 including a hole injection layer and a hole transport layer, the hole injection layer is closer to the anode 101 than the hole transport layer. As an example, see further. Figures 1 to 6 The hole functional layer 105 includes a hole injection layer 1051 and a hole transport layer 1052 stacked sequentially. The hole injection layer 1051 is closer to the anode 101 than the hole transport layer 1052. The thickness of the hole injection layer 1051 in the second direction is, for example, 20 nm to 30 nm, and the thickness of the hole transport layer 1052 in the second direction is, for example, 20 nm to 40 nm.

[0069] In some embodiments of this application, the material of the hole functional layer 105 includes one or more of organic materials, a third inorganic material, and a fourth inorganic material. The organic materials include, but are not limited to, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), and polypyrrole (…). CAS No. 30604-81-0), 3-hexyl-substituted polythiophene (CAS No. 104934-50-1), poly(9-vinylcarbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis(9-carbazole)biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine] (abbreviated as Poly-TPD, CAS No. 472960-35-3), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly[(9,9-dioctylfluorenyl-2,7-diyl) -Co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviated as TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)] (CAS No. 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4”-tris(carbazole-9-yl)triphenylamine (abbreviated as TCTA, CAS No. 139092-78-7), 4,4',4'-tris(2-naphthalene) N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-Diamine (Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTTA, CAS No. 1333317-99-9), 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-omeTAD, CAS No. 207739-72-8), N,N,N',N'-tetraarylbenzidine One or more of the following: (CAS No. 15546-43-7), 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), N,N'-diphenyl-N,N'-di-[4-(N,N-diphenylamino)phenyl]benzidine (CAS No. 167218-46-4), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (CAS No. 138184-36-8), and poly[2-methoxy-5-[(3,7-dimethyloctyloxy)-1,4-phenyl]-1,2-vinyldiyl] (CAS No. 177716-59-5).

[0070] The third inorganic material includes, for example, one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide. The fourth inorganic material includes, for example, one or more doped second compounds. The host compound of the doped second compound includes graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide. The doping element of the doped second compound is selected from one or more of boron, nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals. The molar amount of the doping element accounts for less than or equal to 50% of the total molar amount of the doped second compound.

[0071] In some embodiments of this application, the material of the insulating layer 104 includes, but is not limited to, one or more of organic polymer insulating materials, composite insulating materials, and organic / inorganic hybrid insulating materials. For example, the material of the insulating layer 104 is selected from one or more of polymethyl methacrylate, polycarbonate, polyethylene terephthalate, polyethylene naphthalate, and polyethersulfone.

[0072] In some embodiments of this application, the materials of the anode 101 and the cathode 102 are independently selected from one or more of metals, carbon materials, metal oxides, metal fluorides, metal carbonates, and metal sulfides. The metals include, but are not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg. The carbon materials include, but are not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxides include, but are not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), TiO2, SnO2, ZnO, and In2O3. The metal fluorides include, but are not limited to, one or more of LiF, BaF2, and CsF. The metal carbonates include, but are not limited to, CaCO3. The metal sulfides include, but are not limited to, ZnS.

[0073] The anode 101 and the cathode 102 can also be composite electrodes. The composite electrode can be a double-layer structure or have a "sandwich"-like structure. The material of each layer in the composite electrode is independently selected from one or more of the following: metal, carbon material, metal oxide, metal fluoride, metal carbonate and metal sulfide. The composite electrode with a bilayer structure includes, but is not limited to, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, or CaCO3 / Al. ​​Composite electrodes with a sandwich-like structure include, but are not limited to, one or more of BaF2 / Ca / Al, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2, with the thickness of the intermediate layer not exceeding 35 nm. The thickness of the anode 101 in the second direction can, for example, be 100 nm to 150 nm, and the thickness of the cathode 102 in the second direction can, for example, be 100 nm to 150 nm.

[0074] It is understood that the optoelectronic device 10 may also include a substrate, which is disposed on the side of the anode 101 away from the hole functional layer 105 or the side of the cathode 102 away from the electron functional layer 106. The substrate may be a rigid substrate or a flexible substrate. The material of the rigid substrate includes, but is not limited to, one or more of glass, ceramic and silicon wafer. The material of the flexible substrate includes, but is not limited to, one or more of polyimide, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate and polyethersulfone.

[0075] It should be noted that the fabrication methods for each functional layer in the optoelectronic device 10 include, but are not limited to, chemical and / or physical methods. Chemical methods include, but are not limited to, one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include, but are not limited to, physical deposition and solution methods. Physical deposition methods include, but are not limited to, one or more of thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. Solution methods include, but are not limited to, one or more of spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spray coating, roller coating, casting, slot coating, and strip coating. It should be noted that when using solution methods to fabricate functional layers, a drying process can be added to form a cured film. The drying process includes, but is not limited to, one or more of heat treatment, vacuum drying, and photocuring. In addition, the first notch 10521 and the second notch 10621 can be formed by etching process.

[0076] After fabricating all functional layers of the optoelectronic device, an encapsulation process is required. Encapsulation can be performed using conventional machine encapsulation or manual encapsulation. In the encapsulation environment, both oxygen and water content must be below 0.1 ppm to ensure the stability of the optoelectronic device. For upright optoelectronic devices, please refer to [link to relevant documentation]. Figure 1 , Figure 3 and Figure 5 The encapsulation layer 107 covers the light-emitting layer 103; for inverted optoelectronic devices, please refer to [link / reference needed]. Figure 2 , Figure 4 and Figure 6 The encapsulation layer 107 covers the anode 101, the cathode 102 and the insulating layer 104.

[0077] Specifically, the encapsulation material used to form the encapsulation layer 107 is selected from one or more of UV adhesive, metal film and glass adhesive. For example, the encapsulation material is acrylic resin or epoxy resin.

[0078] This application also provides a display device, which includes a display panel. The display panel includes a plurality of pixel units arranged in an array, and each pixel unit independently includes the optoelectronic device as described above. The display device can be any electronic product with display function, including but not limited to smartphones, tablet personal computers, mobile phones, video phones, e-book readers, laptop PCs, netbook computers, workstations, servers, personal digital assistants, portable multimedia players, MP3 players, mobile medical devices, cameras, game consoles, digital cameras, car navigation systems, electronic billboards, ATMs, smart bracelets, smartwatches, virtual reality (VR) devices, or wearable devices.

[0079] The technical solutions and effects of this application will be described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of this application and are not intended to limit this application.

[0080] Example 1

[0081] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 1As shown, the optoelectronic device 10 includes a glass substrate 100, an anode 101, a cathode 102, a light-emitting layer 103, an insulating layer 104, a hole functional layer 105, an electronic functional layer 106, and an encapsulation layer 107. In a first direction, the anode 101 and cathode 102 are spaced apart on the glass substrate 100; the hole functional layer 105 is disposed on the side of the anode 101 away from the glass substrate 100, and the electronic functional layer 106 is disposed on the side of the cathode 102 away from the glass substrate 100. The hole functional layer 105 and the electronic functional layer 106 are on the same side and spaced apart in the first direction; the insulating layer 104 is disposed on the glass substrate 100 and located in the middle of the glass substrate 100, filling the space between the anode 101 and the cathode 102 and extending into the hole space. Between functional layer 105 and electronic functional layer 106; light-emitting layer 103 is stacked on the side of insulating layer 104 away from glass substrate 100, light-emitting layer 103 is stacked on the side of hole functional layer 105 away from anode 101, and light-emitting layer 103 is stacked on the side of electronic functional layer 106 away from cathode 102, and the side of insulating layer 104 away from glass substrate 100, the side of hole functional layer 105 away from anode 101, and the side of electronic functional layer 106 away from cathode 102 are flush with each other, and encapsulation layer 107 covers light-emitting layer 103. Based on the fact that anode 101, cathode 102, and insulating layer 104 are respectively disposed on glass substrate 100, and the side of anode 101 away from hole functional layer 105, the side of cathode 102 away from electronic functional layer 106, and the side of insulating layer 104 away from light-emitting layer 103 are flush with each other.

[0082] In the second direction, the anode 101 and the light-emitting layer 103 are spaced apart, and a hole functional layer 105 is located between the anode 101 and the light-emitting layer 103. The hole functional layer 105 includes a stacked hole injection layer 1051 and a hole transport layer 1052, with the hole transport layer 1052 being closer to the light-emitting layer 103 than the hole injection layer 1051. In the second direction, the cathode 102 and the light-emitting layer 103 are spaced apart, and an electron functional layer 106 is located between the anode 101 and the light-emitting layer 103. The electron functional layer 106 includes a stacked electron injection layer 1061 and an electron transport layer 1062, with the electron transport layer 1062 being closer to the light-emitting layer 103 than the electron injection layer 1061.

[0083] The light-emitting area is defined as a 2mm × 2mm square. The materials and thicknesses of each layer in the optoelectronic device 10 are as follows:

[0084] The anode 101 is made of ITO, has a thickness of 100 nm in the second direction, and has a length of 0.75 mm in the first direction.

[0085] The cathode 102 is made of Ag, the anode 101 has a thickness of 100 nm in the second direction, and the anode 101 has a length of 0.75 mm in the first direction;

[0086] The hole injection layer 1051 is made of PEDOT:PSS, has a thickness of 30 nm in the second direction, and has a length of 0.75 mm in the first direction.

[0087] The hole transport layer 1052 is made of TFB material, has a thickness of 40 nm in the second direction, and has a length of 0.75 mm in the first direction.

[0088] The electron injection layer 1061 is made of nano-SnO2 (average particle size of 5nm), the electron injection layer 1061 has a thickness of 30nm in the second direction, and the electron injection layer 1061 has a length of 0.75mm in the first direction.

[0089] The electron transport layer 1062 is made of nano-ZnO (average particle size of 4.4 nm), the electron transport layer 1062 has a thickness of 40 nm in the second direction, and the electron transport layer 1062 has a length of 0.75 mm in the first direction.

[0090] The material of the light-emitting layer 103 includes CdSe quantum dots, the light emission color is green, the thickness of the light-emitting layer 103 in the second direction is 50nm, and the length of the light-emitting layer 103 in the first direction is 2mm;

[0091] The insulating layer 104 is made of polymethyl methacrylate, has a thickness of 170 nm in the second direction, and has a length of 0.5 mm in the first direction.

[0092] The method for fabricating the optoelectronic device in this embodiment includes the following steps:

[0093] S1.1 Provide a glass substrate, immerse the glass substrate in deionized water and add sodium hydroxide aqueous solution (sodium hydroxide concentration is 20mol / L), ultrasonically clean for 15min, then rinse the glass substrate with deionized water to remove sodium hydroxide aqueous solution, then immerse it in isopropanol and ultrasonically clean for 15min, and blow dry with nitrogen to obtain a clean glass substrate; under normal temperature and pressure air environment, inkjet print polymethyl methacrylate solution (solvent is anisole, polymethyl methacrylate concentration is 50mg / mL) in the middle of the glass substrate, and then place it at 130℃ for constant temperature heat treatment for 30min to obtain an insulating layer;

[0094] S1.2, with a vacuum degree not exceeding 3×10 -4Under vacuum conditions of Pa, ITO is sputtered on one side of the insulating layer to obtain the anode, and Ag is thermally evaporated on the opposite side of the insulating layer to obtain the cathode;

[0095] S1.3. Under normal temperature and pressure air environment, inkjet print PEDOT:PSS aqueous solution on the side of the anode away from the glass substrate, and then place it in a constant temperature heat treatment at 150℃ for 15 min to obtain hole injection layer.

[0096] S1.4 Under normal temperature and pressure nitrogen atmosphere, inkjet print TFB solution on the side of hole injection layer away from anode. The solvent of TFB solution is chlorobenzene and the concentration of TFB in TFB solution is 7.5 mg / mL. Then place it in a nitrogen atmosphere at 150℃ for constant temperature heat treatment for 30 min to obtain hole transport layer.

[0097] S1.5 Under normal temperature and pressure nitrogen atmosphere, inkjet print nano SnO2 solution on the side of the cathode away from the glass substrate. The solvent of nano SnO2 solution is methanol. The concentration of nano SnO2 in nano SnO2 solution is 15 mg / mL. Then, place it in a nitrogen atmosphere at 120℃ for constant temperature heat treatment for 15 min to obtain electron injection layer.

[0098] S1.6 Under normal temperature and pressure nitrogen atmosphere, inkjet print nano ZnO solution on the side of electron injection layer away from electron transport layer. The concentration of nano ZnO in nano ZnO solution is 25 mg / mL. The solvent of nano ZnO solution is ethanol. Then place it in nitrogen atmosphere at 80℃ for constant temperature heat treatment for 30 min to obtain electron transport layer.

[0099] S1.7 Under normal temperature and pressure nitrogen atmosphere, inkjet print quantum dot solution on the side of hole transport layer away from hole injection layer, the side of electron transport layer away from electron injection layer, and the side of insulating layer away from glass substrate. The concentration of quantum dots in quantum dot solution is 25 mg / mL, and the solvent of quantum dots is n-heptane. Then, place it in a nitrogen atmosphere at 80℃ for constant temperature heat treatment for 10 min to obtain the light-emitting layer.

[0100] S1.8. An epoxy resin encapsulation layer is formed to obtain an optoelectronic device.

[0101] Example 2

[0102] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 2 As shown, compared to the optoelectronic device in Example 1, the main difference in this optoelectronic device lies in the fact that the light-emitting layer 103 and the insulating layer 104 are different. The structural composition and preparation method of the anode 101, cathode 102, hole functional layer 105, and electron functional layer 106 are the same as in Example 1, and will not be described again here.

[0103] In the optoelectronic device of this embodiment, see further reference. Figure 3 The light-emitting layer 103 includes a base 1031 and a protrusion 1032 connected to each other. A hole transport layer 1052 and an electron transport layer 1062 are respectively connected to the protrusion 1032, and the hole transport layer 1052 and the electron transport layer 1062 are respectively connected to the base 1031. In a second direction, the anode 101 is spaced apart from the base 1031, and the hole functional layer 105 is located between the anode 101 and the base 1031. In the second direction, the cathode 102 is spaced apart from the base 1031, and the electron functional layer 106 is located between the cathode 102 and the base 1031. The base 1031 is stacked on the same side of the hole transport layer 1052 and the electron transport layer 1062, and the base 1031 covers the hole transport layer 1052 and the electron transport layer 1062.

[0104] In the first direction, the protrusion 1032 is located between the base 1031 and the insulating layer 104. In the first direction, the protrusion 1032 fills the space between the hole transport layer 1052 and the electron transport layer 1062. The protrusion 1032 is stacked on the side of the insulating layer 104 away from the glass substrate 100.

[0105] The base 1031 is made of CdSe quantum dots (same as in Example 1), emits green light, has a thickness of 30 nm in the second direction, and a length of 2 mm in the first direction. The protrusion 1032 is made of CdSe quantum dots (same as in Example 1), emits green light, has a thickness of 25 nm in the second direction, and a length of 0.5 mm in the first direction. The insulating layer 104 is made of polymethyl methacrylate, has a thickness of 14 nm in the second direction, and a length of 0.5 mm in the first direction.

[0106] The method for fabricating the optoelectronic device in this embodiment is the same as that for the optoelectronic device in Example 1.

[0107] Example 3

[0108] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 3As shown, compared with the optoelectronic device in Embodiment 2, the only difference of the optoelectronic device in this embodiment is that: the length of the protrusion 1032 in the first direction is 1mm, the hole transport layer 1052 is provided with a first notch 10521 adapted to and stacked with the protrusion of the protrusion 1032, and the electron transport layer 1062 is provided with a second notch 10621 adapted to and stacked with the protrusion of the protrusion 1032. The first notch 10521 and the second notch 10621 have the same size, that is: the length in the first direction is 0.25mm, and the thickness in the second direction is 25nm.

[0109] In this embodiment, the preparation method of the optoelectronic device is the same as that of the optoelectronic device in Embodiment 1. The first notch 10521 and the second notch 10621 can be formed by etching process respectively.

[0110] Example 4

[0111] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 3 As shown, compared with the optoelectronic device in Embodiment 2, the only difference of the optoelectronic device in this embodiment is that: the length of the protrusion 1032 in the first direction is 1.5mm, the hole transport layer 1052 is provided with a first notch 10521 adapted to and stacked with the protrusion of the protrusion 1032, and the electron transport layer 1062 is provided with a second notch 10621 adapted to and stacked with the protrusion of the protrusion 1032. The first notch 10521 and the second notch 10621 have the same size, that is: the length in the first direction is 0.5mm, and the thickness in the second direction is 25nm.

[0112] In this embodiment, the preparation method of the optoelectronic device is the same as that of the optoelectronic device in Embodiment 1. The first notch 10521 and the second notch 10621 can be formed by etching process respectively.

[0113] Example 5

[0114] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 3 As shown, compared with the optoelectronic device in Embodiment 2, the only difference of the optoelectronic device in this embodiment is that: the length of the protrusion 1032 in the first direction is 1mm, the hole transport layer 1052 is provided with a first notch 10521 adapted to and stacked with the protrusion of the protrusion 1032, and the electron transport layer 1062 is provided with a second notch 10621 adapted to and stacked with the protrusion of the protrusion 1032. The first notch 10521 and the second notch 10621 have the same size, that is: the length in the first direction is 0.25mm, and the thickness in the second direction is 15nm.

[0115] In this embodiment, the preparation method of the optoelectronic device is the same as that of the optoelectronic device in Embodiment 1. The first notch 10521 and the second notch 10621 can be formed by etching process respectively.

[0116] Example 6

[0117] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 5 As shown, compared with the optoelectronic device in Embodiment 2, the only difference of the optoelectronic device in this embodiment is that: the length of the protrusion 1032 in the first direction is 1mm, the hole transport layer 1052 is provided with a first notch 10521 adapted and stacked with the protrusion of the protrusion 1032, and the electron transport layer 1062 is provided with a second notch 10621 adapted and stacked with the protrusion of the protrusion 1032. The first notch 10521 and the second notch 10621 have the same size, that is: the length in the first direction is 0.25mm, and the thickness in the second direction is 20nm.

[0118] In this embodiment, the preparation method of the optoelectronic device is the same as that of the optoelectronic device in Embodiment 1. The first notch 10521 and the second notch 10621 can be formed by etching process respectively.

[0119] Example 7

[0120] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 5 As shown, compared to the optoelectronic device in Embodiment 2, the only difference in this embodiment is that: the length of the protrusion 1032 in the first direction is 1 mm, the hole transport layer 1052 is provided with a first notch 10521 that is adapted to and stacked with the protrusion of the protrusion 1032, and the electron transport layer 1062 is provided with a second notch 10621 that is adapted to and stacked with the protrusion of the protrusion 1032. The first notch 10521 and the second notch 10621 have the same size, that is: the length in the first direction is 0.25 mm, and the thickness in the second direction is 13 nm; and the material of the light-emitting layer is replaced with "CdTe quantum dots, and the light-emitting color is red".

[0121] In this embodiment, the preparation method of the optoelectronic device is the same as that of the optoelectronic device in Embodiment 1. The first notch 10521 and the second notch 10621 can be formed by etching process respectively.

[0122] Example 8

[0123] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 5As shown, compared to the optoelectronic device in Embodiment 2, the only difference in this embodiment is that: the length of the protrusion 1032 in the first direction is 1 mm, the hole transport layer 1052 is provided with a first notch 10521 that is adapted to and stacked with the protrusion of the protrusion 1032, and the electron transport layer 1062 is provided with a second notch 10621 that is adapted to and stacked with the protrusion of the protrusion 1032. The first notch 10521 and the second notch 10621 have the same size, that is: the length in the first direction is 0.25 mm, and the thickness in the second direction is 13 nm; and the material of the light-emitting layer is replaced with "ZnCdS quantum dots, and the light emission color is blue".

[0124] In this embodiment, the preparation method of the optoelectronic device is the same as that of the optoelectronic device in Embodiment 1. The first notch 10521 and the second notch 10621 can be formed by etching process respectively.

[0125] Comparative Example 1

[0126] This comparative example provides an optoelectronic device, which is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 7 As shown, the optoelectronic device includes an anode 101, a hole functional layer 105, a light-emitting layer 103, an electron functional layer 106, and a cathode 102, which are stacked sequentially. The light-emitting layer 103 is the light-emitting layer; the hole functional layer 105 includes a hole injection layer 1051 and a hole transport layer 1052 stacked together, with the hole injection layer 1051 closer to the anode 101 than the hole transport layer 1052; the electron functional layer 106 includes an electron injection layer 1061 and an electron transport layer 1062 stacked together, with the electron injection layer 1061 closer to the cathode 102 than the electron transport layer 1062.

[0127] The materials and thicknesses of each layer in optoelectronic device 10 are as follows:

[0128] The anode 101 is made of ITO and has a thickness of 100 nm.

[0129] The cathode 102 is made of Ag and has a thickness of 100 nm.

[0130] The hole injection layer 1051 is made of PEDOT:PSS and has a thickness of 20nm.

[0131] The hole transport layer 1052 is made of TFB material and has a thickness of 25 nm.

[0132] The material of the light-emitting layer 103 includes green quantum dots (the same as the quantum dots in Example 1), and the thickness of the light-emitting layer 103 is 35 nm;

[0133] The electron injection layer 1061 is made of nano-SnO2 (the same as in Example 1), and the thickness of the electron injection layer 1061 is 20 nm.

[0134] The electron transport layer 1062 is made of nano-ZnO (the same as in Example 1), and the thickness of the electron transport layer 1062 is 25 nm.

[0135] Comparative Example 2

[0136] This comparative example provides an optoelectronic device. Compared with the optoelectronic device in Comparative Example 1, the only difference in this optoelectronic device is that the electron injection layer is omitted and the thickness of the electron transport layer is replaced with "45nm".

[0137] Comparative Example 3

[0138] This comparative example provides an optoelectronic device. Compared with the optoelectronic device in Comparative Example 1, the only difference in this comparative example is that the material of the light-emitting layer is replaced with the red quantum dots in Example 7.

[0139] Comparative Example 4

[0140] This comparative example provides an optoelectronic device. Compared with the optoelectronic device in Comparative Example 1, the only difference in this optoelectronic device is that the material of the light-emitting layer is replaced with the blue quantum dots in Example 8.

[0141] Experimental Example

[0142] The performance of the optoelectronic devices in Examples 1 to 8 and Comparative Examples 1 to 4 was tested after 1 hour of packaging. The performance tests were conducted at a temperature of 25°C and a relative humidity of 40%.

[0143] The photoelectric performance was tested using a Fostar FPD optical characteristic measurement system (comprising a Marine Optics USB2000, a LabVIEW-controlled QE-PRO spectrometer, a Keithley 2400, a high-precision digital source meter Keithley 6485, a 50μm inner diameter optical fiber, device test probes and fixtures, various connecting cables and data cards, an efficiency test cassette, and a data acquisition system). The system acquired parameters such as the turn-on voltage, current, brightness, and emission spectrum of each photoelectric device, and also obtained the maximum brightness (L). max Then, key parameters such as external quantum efficiency and power efficiency are calculated.

[0144] The method for detecting current efficiency includes the following steps: setting the luminous area to 4 mm². 2The brightness values ​​of the optoelectronic device were intermittently collected within a voltage range of 0V to 8V, with a collection every 0.2V. The current efficiency of the optoelectronic device under that collection condition was obtained by dividing the brightness value collected each time by the corresponding current density. The maximum current efficiency (CE) was then obtained. max ,cd / A).

[0145] The device lifetime testing method includes the following steps: Under constant current (2mA) driving, electroluminescence lifetime analysis is performed on each optoelectronic device using lifetime testing equipment. The time (T95,h) required for each optoelectronic device to decay from its maximum brightness to 95% is recorded. Then, the device lifetime (T95@1000nit,h) at a brightness of 1000nit is obtained through the extended exponential decay brightness decay fitting formula. The specific calculation formula is as follows:

[0146]

[0147] Among them, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, L L It is 1000 nits, and A is the acceleration factor with a value of 1.7.

[0148] The performance test results of each optoelectronic device are shown in Table 1 below:

[0149] Table 1

[0150]

[0151]

[0152] As shown in Table 1, compared with the optoelectronic devices in Comparative Examples 1 and 2, the optoelectronic devices in Examples 1 to 6 have longer device lifespan, higher device efficiency, and higher maximum brightness; compared with the optoelectronic device in Comparative Example 3, the electrical device in Example 7 has longer device lifespan, higher device efficiency, and higher maximum brightness; compared with the optoelectronic device in Comparative Example 4, the electrical device in Example 8 has longer device lifespan, higher device efficiency, and higher maximum brightness.

[0153] This demonstrates that, compared to conventional multilayer optoelectronic devices, the optoelectronic devices in this embodiment exhibit superior overall performance. This is because: the light-emitting layer is positioned at the top or bottom of the anode, cathode, hole functional layer, and electron functional layer, allowing the light emitted from the light-emitting layer to bypass other functional layers, effectively improving the luminous efficiency of the optoelectronic device; and the use of an insulating layer to isolate the electron functional layer from the hole functional layer creates a single-loop carrier movement path, effectively mitigating the problem of carrier injection imbalance and improving the device lifespan and performance stability of the optoelectronic device.

[0154] The foregoing has provided a detailed description of an optoelectronic device and display apparatus provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are merely for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. An optoelectronic device, characterized in that, include: An anode and a cathode are spaced apart in the first direction; A hole-functional layer is disposed on one side of the anode; An electronic functional layer is disposed on one side of the cathode and is disposed on the same side as the hole functional layer and spaced apart in the first direction; An insulating layer is disposed between the anode and the cathode, and extends between the electronic functional layer and the hole functional layer; as well as A light-emitting layer is disposed on one side of the insulating layer; The hole functional layer and the electron functional layer are respectively connected to the light-emitting layer; in a second direction perpendicular to the first direction, the anode and the light-emitting layer are spaced apart, and the hole functional layer is located between the anode and the light-emitting layer; in the second direction, the cathode and the light-emitting layer are spaced apart, and the electron functional layer is located between the cathode and the light-emitting layer.

2. The optoelectronic device according to claim 1, characterized in that, At least one of the following conditions must be met: (1) The insulating layer is filled between the anode and the cathode, and the insulating layer is filled between the electron functional layer and the hole functional layer; (2) The side of the anode away from the hole functional layer, the side of the cathode away from the electron functional layer, and the side of the insulating layer away from the light-emitting layer are flush; (3) The sum of the thicknesses of the anode and the hole functional layer in the second direction is the first thickness, and the sum of the thicknesses of the cathode and the electron functional layer in the second direction is the second thickness. The ratio between the first thickness and the second thickness is 1:(0.8~1.2).

3. The optoelectronic device according to claim 1 or 2, characterized in that, The light-emitting layer is stacked on the side of the hole functional layer away from the anode, and the light-emitting layer is stacked on the side of the electron functional layer away from the cathode.

4. The optoelectronic device according to claim 3, characterized in that, The side of the hole functional layer away from the anode, the side of the electron functional layer away from the cathode, and the side of the insulating layer close to the light-emitting layer are flush.

5. The optoelectronic device according to claim 1 or 2, characterized in that, The light-emitting layer includes a base and a protrusion connected to each other. The hole functional layer and the electron functional layer are respectively connected to the protrusion, and the hole functional layer and the electron functional layer are respectively connected to the base. In the second direction, the protrusion is located between the base and the insulating layer; in the first direction, the protrusion is located between the hole functional layer and the electron functional layer.

6. The optoelectronic device according to claim 5, characterized in that, At least one of the following conditions must be met: (1) The protrusions are stacked on the side of the insulating layer near the light-emitting layer; (2) In the second direction, the anode and the base are spaced apart, and the hole functional layer is located between the anode and the base; (3) In the second direction, the cathode and the base are spaced apart, and the electronic functional layer is located between the cathode and the base.

7. The optoelectronic device according to claim 5, characterized in that, It has at least one of the following technical features: (1) The cavity functional layer is provided with a first notch portion that is adapted to be stacked with the protrusion; (2) The electronic functional layer is provided with a second notch that is adapted to and stacked with the protrusion; (3) The ratio between the thickness of the protrusion in the second direction and the thickness of the base in the second direction is 1:(1 to 1.5), and the ratio between the length of the base in the first direction and the length of the protrusion in the first direction is 1:(0.5 to 0.75).

8. The optoelectronic device according to claim 7, characterized in that, When the hole functional layer has a first notch that is adapted to stack with the protrusion, and the electronic functional layer has a second notch that is adapted to stack with the protrusion, at least one of the following conditions is satisfied: (1) The ratio between the thickness of the cavity functional layer in the second direction and the depth of the first notch in the second direction is 1:(0.2~0.5); (2) The ratio between the thickness of the electronic functional layer in the second direction and the depth of the second notch in the second direction is 1:(0.2~0.5); (3) The depth of the first notch in the second direction is the same as the depth of the second notch in the second direction.

9. The optoelectronic device according to claim 1 or 2, characterized in that, At least one of the following conditions must be met: (1) The hole functional layer includes a hole injection layer and a hole transport layer stacked together, wherein the hole injection layer is closer to the anode than the hole transport layer; (2) The electronic functional layer includes an electron injection layer and an electron transport layer stacked together, wherein the electron injection layer is closer to the cathode than the electron transport layer.

10. A display device, characterized in that, The display device includes a display panel, the display panel including a plurality of pixel units arranged in an array, each pixel unit independently including an optoelectronic device as described in any one of claims 1 to 9.

Images