Crucible supporting structure, crucible assembly and single crystal furnace

Abstract

The utility model discloses a crucible supporting structure, a crucible assembly and a single crystal furnace, and belongs to the technical field of monocrystalline silicon preparation. The crucible supporting structure comprises a crucible side, the crucible side comprises a first inner crucible layer and a first outer crucible layer which are connected, and a flow guide cavity is formed between the first inner crucible layer and the first outer crucible layer; the crucible support is mounted at the bottom of the crucible side and comprises a second inner support layer and a second outer support layer which are connected with each other, a liquid collecting cavity is formed between the second inner support layer and the second outer support layer, and the liquid collecting cavity is communicated with the flow guide cavity. Through the arrangement of the flow guide cavity and the liquid collection cavity which are communicated with each other, leaked silicon liquid can be effectively guided and collected, and the risk that the silicon liquid directly leaks out and burns through a bottom thermal insulation material is remarkably reduced.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of single crystal silicon preparation, and particularly relates to a crucible supporting structure, a crucible assembly and a single crystal furnace. BACKGROUND

[0002] With the rapid development of the single crystal industry, the size of the single crystal furnace is continuously increasing, and the updating speed of the thermal field accessories is accelerating. In order to reduce costs and increase efficiency, the operation time of the single crystal furnace is also being extended, which causes the phenomenon of crucible silicon leakage or silicon infiltration to occur from time to time. Once the silicon liquid leaks out of the crucible supporting structure, it will directly scald through the bottom insulation material, which not only causes production interruption and increases production costs, but also may affect product quality and production efficiency. CONTENT OF THE UTILITY MODEL

[0003] The application aims to at least solve one of the technical problems existing in the prior art. To this end, the application provides a crucible supporting structure, a crucible assembly and a single crystal furnace, so that the leaked silicon liquid can be effectively guided and collected, reducing the risk of direct leakage of the silicon liquid and scalding through the bottom insulation material.

[0004] In a first aspect, the application provides a crucible supporting structure, comprising:

[0005] a crucible body, the crucible body comprising a first inner crucible layer and a first outer crucible layer connected together, a flow guide cavity being formed between the first inner crucible layer and the first outer crucible layer;

[0006] a crucible support, the crucible support being installed at the bottom of the crucible body, and the crucible support comprising a second inner support layer and a second outer support layer connected together, a liquid collecting cavity being formed between the second inner support layer and the second outer support layer, the liquid collecting cavity being in communication with the flow guide cavity.

[0007] According to the crucible supporting structure of the application, by the arrangement of the above-mentioned communicated flow guide cavity and liquid collecting cavity, the leaked silicon liquid can be effectively guided and collected, significantly reducing the risk of direct leakage of the silicon liquid and scalding through the bottom insulation material, and by the sandwich design of the crucible body and the crucible support, equal stress of the crucible body and the crucible support is realized, the problem of silicon leakage caused by excessive local stress is alleviated, and in the case of slight silicon infiltration or silicon leakage, the crucible supporting structure can still work normally, without affecting the single crystal pulling process, thereby improving production efficiency and product quality while reducing production costs.

[0008] According to an embodiment of the application, the crucible body further comprises:

[0009] at least one first support rib, the first support rib being connected between the first inner crucible layer and the first outer crucible layer, for dividing the flow guide cavity into a plurality of sub-flow guide cavities, the first support rib being provided with a first flow hole, and adjacent two of the sub-flow guide cavities being in communication through the first flow hole.

[0010] According to one embodiment of the present application, the crucible support further comprises:

[0011] at least one second supporting rib connected between the second inner support layer and the second outer support layer for dividing the collecting cavity into a plurality of sub-collecting cavities, the second supporting rib being provided with a second flow hole through which adjacent two of the sub-collecting cavities are communicated.

[0012] According to one embodiment of the present application, the crucible support further comprises;

[0013] a base located at the bottom center of the crucible support, one end of the second inner support layer and the second outer support layer being connected with the crucible support, and the other end being connected with the sidewall of the base; the collecting cavity being arranged around the base.

[0014] According to one embodiment of the present application, a down- concave and around-the-base overflow groove is formed between the second outer support layer and the base, and the overflow groove is communicated with the collecting cavity.

[0015] According to one embodiment of the present application, the crucible support extends in the vertical direction, and comprises an assembled segment and a chamfered segment connected with each other, the assembled segment extending in the vertical direction and being connected with the crucible support in vertical abutment.

[0016] According to one embodiment of the present application, the crucible support further comprises a first connecting rib connected with the first inner crucible layer and the first outer crucible layer and located at the lower end of the crucible support, and a second connecting rib connected with the second inner support layer and the second outer support layer and located at the upper end of the assembled segment, one of the first connecting rib and the second connecting rib being provided with a protrusion, and the other being provided with a groove for vertical abutment with the protrusion.

[0017] According to one embodiment of the present application, the first inner crucible layer and the second inner support layer are made of carbon / carbon composite material, the first outer crucible layer and the second outer support layer are made of graphite material, and the crucible support further comprises an upper edge segment connecting the upper end of the first inner crucible layer and the upper end of the first outer crucible layer, the upper edge segment being made of graphite material.

[0018] In a second aspect, the present application provides a crucible assembly, which comprises:

[0019] a crucible support structure as in any one of the preceding items;

[0020] a crucible arranged in the crucible support structure.

[0021] According to the crucible assembly provided in the application, the leaked silicon liquid can be effectively guided and collected by the arrangement of the crucible supporting structure, the risk of the silicon liquid directly leaking out and burning through the bottom heat insulation material is significantly reduced, the equal stress of the crucible block and the crucible support is realized by the sandwich design of the crucible block and the crucible support, the leakage problem caused by the excessive local stress is alleviated, the crucible supporting structure can still work normally in the case of slight silicon leakage or silicon leakage, and the single crystal pulling process is not affected, so that the production efficiency and product quality are improved, and the production cost is reduced.

[0022] In a third aspect, the application provides a single crystal furnace, comprising:

[0023] a furnace body;

[0024] a crucible assembly as described above, which is arranged in the furnace body.

[0025] According to the single crystal furnace provided in the application, the leaked silicon liquid can be effectively guided and collected by the arrangement of the crucible assembly, the risk of the silicon liquid directly leaking out and burning through the bottom heat insulation material is significantly reduced, a more reliable thermal field accessory support is provided for single crystal production, and the equal stress of the crucible block and the crucible support is realized by the sandwich design of the crucible block and the crucible support, the leakage problem caused by the excessive local stress is alleviated, the crucible supporting structure can still work normally in the case of slight silicon leakage or silicon leakage, and the single crystal pulling process is not affected, so that the production efficiency and product quality are improved, and the production cost is reduced.

[0026] Additional aspects and advantages of the application will be in part apparent and in part pointed out hereinafter in the description. BRIEF DESCRIPTION OF DRAWINGS

[0027] The above and / or additional aspects and advantages of the application will become apparent and be readily appreciated from the description of the embodiments, taken in conjunction with the following drawings in which:

[0028] Figure 1 is a structural schematic diagram of the crucible supporting structure provided by the embodiments of the application;

[0029] Figure 2 is an exploded view of the crucible supporting structure provided by the embodiments of the application;

[0030] Figure 3 is Figure 1 the enlarged view of the structure at A in FIG. 6.

[0031] REFERENCE NUMERALS:

[0032] crucible supporting structure 10;

[0033] The pot country 11 includes a first inner pot layer 111 and a first outer pot layer 112 connected to each other, and a flow guide cavity 113 is formed between the first inner pot layer 111 and the first outer pot layer 112.

[0034] The pot support 12 includes a second inner support layer 121 and a second outer support layer 122 connected to each other, and a liquid collecting cavity 123 is formed between the second inner support layer 121 and the second outer support layer 122. DETAILED DESCRIPTION

[0035] The embodiments of the present application are described in detail below with reference to the accompanying drawings. The embodiments described below are examples for explaining the present application and should not be construed as limiting the present application.

[0036] The present application discloses a crucible support structure 10 for supporting and carrying a crucible.

[0037] Reference is made below to Figures 1-3 The crucible support structure 10 according to the embodiments of the present application is described.

[0038] In some embodiments, as shown in Figure 1 and Figure 2 The crucible support structure 10 includes a pot country 11 and a pot support 12.

[0039] As shown in Figure 1 and Figure 2 The pot country 11 includes a first inner pot layer 111 and a first outer pot layer 112 connected to each other, and a flow guide cavity 113 is formed between the first inner pot layer 111 and the first outer pot layer 112.

[0040] The pot country 11 is wrapped around the outer sidewall of the crucible, the first inner pot layer 111 serves as the inner layer of the pot country 11 and directly contacts the outer sidewall of the crucible, and the first outer pot layer 112 serves as the outer layer of the pot country 11 and mainly plays a supporting and protecting role. In addition, the first outer pot layer 112 and the first inner pot layer 111 have good connectivity to form a stable flow guide cavity 113 for guiding the flow of leaked silicon liquid.

[0041] The thickness of the first inner pot layer 111 can be 12mm-18mm, and the thickness of the second outer pot layer can be 12mm-18mm.

[0042] For example, in some embodiments, the thickness of the first inner pot layer 111 is 15mm, and the thickness of the second outer pot layer is 15mm.

[0043] As shown in Figure 1 and Figure 2 The crucible support structure 10 comprises a crucible base 11 and a crucible support 12. The crucible base 11 is installed on the bottom of the crucible, and the crucible base 11 comprises a first inner support layer 111 and a first outer support layer 112 connected to each other, and a liquid collecting cavity 113 is formed between the first inner support layer 111 and the first outer support layer 112. The liquid collecting cavity 113 is in communication with the flow guide cavity 113.

[0044] The crucible support 12 is wrapped around the outer bottom wall of the crucible, and the second inner support layer 121 serves as the inner layer of the crucible support 12 and directly contacts the outer bottom wall of the crucible; the second outer support layer 122 serves as the outer layer of the crucible support 12 and mainly plays a supporting and protecting role. And the second inner support layer 121 and the second outer support layer 122 have good connectivity to form a stable liquid collecting cavity 123 for receiving the silicon liquid flowing from the flow guide cavity 113 and temporarily storing the silicon liquid for subsequent processing.

[0045] The thickness of the first inner support layer can be 12mm-18mm, and the thickness of the second outer support layer 122 can be 12mm-18mm.

[0046] For example, in some embodiments, the thickness of the first inner support layer is 15mm, and the thickness of the second outer support layer 122 is 15mm.

[0047] It can be understood that in the process of preparing single crystal silicon, when the crucible appears to leak or seep silicon, due to the presence of the flow guide cavity 113, the silicon liquid will not directly leak out of the crucible support structure, and the silicon liquid can first enter the flow guide cavity 113 of the crucible base 11, and then the silicon liquid flows into the liquid collecting cavity 123 of the crucible support 12 along the flow guide cavity 113 and is collected, thereby effectively avoiding the condition that the silicon liquid directly contacts the bottom insulation material, thereby significantly reducing the risk of being scalded by the bottom insulation material. At the same time, since the crucible base 11 and the crucible support 12 are designed as a sandwich structure, the silicon liquid can flow in the sandwich, which helps to achieve equal stress on the crucible base 11 and the crucible support 12, reducing the problem of silicon leakage caused by excessive local stress. In this way, even if there is a slight seepage or leakage of silicon during the entire crystal pulling process, the present crucible support structure 10 can still maintain normal production, and will not have a significant impact on product quality, while improving production efficiency and reducing the risk of production interruption and cost increase caused by silicon leakage.

[0048] The crucible supporting structure 10 provided by the embodiments of the present application can effectively guide and collect the leaked silicon liquid, significantly reduce the risk of direct leakage of the silicon liquid and burning through the bottom heat preservation material, and realize equal stress of the crucible band 11 and the crucible support 12 by the sandwich design of the crucible band 11 and the crucible support 12, thereby relieving the leakage problem caused by excessive local stress, and the crucible supporting structure 10 can still work normally in the case of slight silicon leakage or silicon leakage, without affecting the single crystal pulling process, thereby improving the production efficiency and product quality and reducing the production cost.

[0049] In some embodiments, as shown in Figure 1 and Figure 2 , the crucible band 11 further comprises at least one first support rib 114.

[0050] The first support rib 114 is connected between the first inner crucible layer 111 and the first outer crucible layer 112, and the first support rib 114 is used to divide the flow guide cavity 113 into a plurality of sub-flow guide cavities 1131. The first support rib 114 is provided with a first flow hole 1141, and the adjacent two sub-flow guide cavities 1131 are communicated through the first flow hole 1141.

[0051] Exemplarily, as shown in Figure 1 and Figure 2 , the crucible band 11 comprises three first support ribs 114, and the three first support ribs 114 divide the flow guide cavity 113 into four sub-flow guide cavities 1131.

[0052] The first support rib 114 can be connected with the first inner crucible layer 111 and the first outer crucible layer 112 by integral molding, clamping or other ways, which is not limited here.

[0053] For example, in some embodiments, the first support rib 114, the first inner crucible layer 111 and the first outer crucible layer 112 are integrally formed by isostatic pressing.

[0054] In this embodiment, as shown in Figure 1 and Figure 2 , the plurality of sub-flow guide cavities 1131 can be sequentially distributed along the extension direction of the crucible band 11, and the width of each sub-flow guide cavity 1131 can be the same, in other words, the width of the flow guide cavity 113 is consistent at each place in the vertical direction, and the first support rib 114 can divide the flow guide cavity 113 into unequal parts, that is, the lengths of at least two of the plurality of sub-flow guide cavities 1131 are different.

[0055] The width of the flow guide cavity 113 can be 8mm-15mm.

[0056] For example, in some embodiments, the width of the flow guide cavity 113 can be 10mm.

[0057] In other embodiments, the first support rib 114 may also divide the flow guide cavity 113 into equal parts, that is, each sub-flow guide cavity 1131 has the same length.

[0058] The first flow passage 1141 can take many forms, such as a circular hole, a square hole, an oblong hole, an arc-shaped hole, or an irregularly shaped hole, etc., and this application does not limit it.

[0059] The first flow passage 1141 can be set to one or more, where multiple means two or more.

[0060] For example, in some embodiments, a first support rib 114 is provided with twenty-five first flow holes 1141 distributed circumferentially on a first support rib 114.

[0061] For example, in some other embodiments, a first flow hole 1141 is provided on a first support rib 114, the first flow hole 1141 surrounding the first inner crucible layer 111.

[0062] It should be noted that the number of first flow passages 1141 can be distributed according to the size of the flow guide cavity 113 and the expected flow rate of the silicon liquid. They are usually evenly distributed on the first support rib 114 so that the silicon liquid can flow evenly and smoothly between each sub-flow guide cavity 1131, and avoid local silicon liquid accumulation or poor flow as much as possible.

[0063] The width of the first flow passage 1141 can be 5mm to 8mm.

[0064] For example, in some embodiments, the width of the first flow hole 1141 can be 8 mm.

[0065] The crucible support structure 10 provided in this embodiment of the application, through the arrangement of the first support rib 114 and the first flow hole 1141, can effectively resist the deformation trend of the first inner crucible layer 111 and the first outer crucible layer 112 without affecting the smooth flow of silicon liquid, maintain the shape and size stability of the crucible liner 11, enhance the overall structural strength of the crucible liner 11, thereby improving the long-term reliability and stability of the crucible liner 11. Furthermore, by using the first support rib 114 to divide the flow guiding cavity 113 into multiple sub-flow guiding cavities 1131, the silicon liquid can be more evenly distributed inside the crucible liner 11 during the flow guiding process, reducing the risk of damage to the flow guiding cavity 113 or increased leakage caused by concentrated impact of silicon liquid.

[0066] In some embodiments, such as Figure 1 and Figure 2 As shown, the crucible support 12 also includes at least one second support rib 124.

[0067] The second support rib 124 is connected between the second inner support layer 121 and the second outer support layer 122. The second support rib 124 is used to divide the liquid collection chamber 123 into multiple sub-liquid collection chambers 1231. The second support rib 124 is provided with a second flow hole 1241, and two adjacent sub-liquid collection chambers 1231 are connected through the second flow hole 1241.

[0068] For example, such as Figure 1 and Figure 2 As shown, the crucible 11 includes three second support ribs 124, which divide the liquid collection chamber 123 into four sub-liquid collection chambers 1231.

[0069] The second support rib 124 can be connected to the first inner support layer and the first outer support layer by integral molding, snap-fit, or other means, which is not limited here.

[0070] For example, in some embodiments, the second support rib 124, the first inner support layer, and the first outer support layer are integrally formed by isostatic pressing.

[0071] In this embodiment, such as Figure 1 and Figure 2 As shown, multiple sub-collecting cavities 1231 can be distributed sequentially along the extension direction of the crucible support 12. The width of each collecting cavity 123 can be different. Specifically, the width of the collecting cavity 123 can gradually decrease from the end near the crucible support 11 to the end away from the crucible support 11.

[0072] In other embodiments, the width of the liquid collecting cavity 123 may be the same at all locations.

[0073] The second flow passage 1241 can take many forms, such as a circular hole, a square hole, an oblong hole, an arc-shaped hole, or an irregularly shaped hole, etc., and this application does not limit it.

[0074] The second flow passage 1241 can be set to one or more, where multiple means two or more.

[0075] For example, in some embodiments, a second support rib 124 is provided with twenty second flow holes 1241 distributed circumferentially.

[0076] For example, in some other embodiments, a second flow hole 1241 is provided on a second support rib 124, the second flow hole 1241 surrounding the first inner support layer.

[0077] It should be noted that the number of second flow holes 1241 can be distributed according to the size of the liquid collection chamber 123 and the expected flow rate of the silicon liquid. They are usually evenly distributed on the second support rib 124 so that the silicon liquid can flow evenly and smoothly between each sub-liquid collection chamber 1231, and avoid local silicon liquid accumulation or poor flow as much as possible.

[0078] The crucible supporting structure 10 provided by the embodiments of the present application can effectively resist the deformation trend of the first inner supporting layer and the first outer supporting layer, maintain the shape and size stability of the crucible supporting structure 12, and enhance the overall structural strength of the crucible supporting structure 12, thereby improving the long-term reliability and stability of the crucible supporting structure 12, by the arrangement of the second supporting rib 124 and the second flow hole 1241 without affecting the smooth flow of the silicon liquid. In addition, the second supporting rib 124 is used to divide the liquid collecting cavity 123 into a plurality of sub-liquid collecting cavities 1231, so as to realize the layered collection of the silicon liquid, so that the silicon liquid can be more uniformly distributed inside the crucible supporting structure 12 during the liquid collecting process, and the risk of damage or leakage of the liquid collecting cavity 123 caused by the concentrated impact of the silicon liquid is reduced.

[0079] In some embodiments, as shown in Figures 1-3 The crucible supporting structure 12 further comprises a base 128.

[0080] The base 128 is located at the bottom center of the crucible supporting structure 12, one end of the second inner supporting layer 121 and the second outer supporting layer 122 is connected with the crucible 11, and the other end is connected with the side wall of the base 128; and the liquid collecting cavity 123 is arranged around the base 128.

[0081] The base 128 is used to bear the weight of the crucible, the crucible 11, the crucible supporting structure 12 and the silicon liquid, and uniformly transmit the gravity to the supporting platform of the single crystal furnace.

[0082] The shape of the base 128 can be designed as a cylinder, a cone or other shapes suitable for matching the shape of the crucible supporting structure 12, which is not limited herein.

[0083] For example, in some embodiments, the base 128 is designed as a cylinder.

[0084] The base 128 can be manufactured by precision casting, mechanical processing or powder metallurgy process, and the base 128 can be connected with the crucible supporting structure 12 by reliable connection methods such as integral molding, riveting or high-strength bolt connection, which is not limited herein.

[0085] It should be noted that the connection part between the base 128 and the crucible supporting structure 12 needs to be finely processed and treated to maintain good sealing performance, so as to reduce the probability of leakage of the silicon liquid from the connection gap.

[0086] The crucible supporting structure 10 provided by the embodiment of the present application provides stable bottom support for the crucible support 12 through the setting of the base 128, enhances the stability of the whole crucible supporting structure 10, reduces the risk of structural damage caused by vibration or impact during the smelting process, and combines the layout design of the liquid collecting cavity 123 surrounding the base 128, so that the silicon liquid can form a relatively stable liquid flow distribution around the base 128 after entering the liquid collecting cavity 123, thereby facilitating the collection and storage of the silicon liquid, reducing the excessive shaking or overflow of the silicon liquid in the liquid collecting cavity 123, and the surrounding liquid collecting cavity 123 design can fully utilize the space of the crucible support 12, providing greater silicon liquid capacity in a limited volume.

[0087] In some embodiments, as shown in Figure 1 and Figure 3 , the second outer support layer 122 and the base 128 form a downwardly recessed and surrounding base 128 overflow groove 129, and the overflow groove 129 is in communication with the liquid collecting cavity 123.

[0088] In this embodiment, as shown in Figure 3 , the bottom of the second outer support layer 122 has a part bent downwardly to form the outer side wall and bottom wall of the overflow groove 129, and a part of the outer side wall of the base 128 forms the inner side wall of the overflow groove 129, and the upper opening of the overflow groove 129 is in communication with the farthest sub-liquid collecting cavity 1231 from the crucible support 11.

[0089] It should be noted that the depth and width of the overflow groove 129 can be designed according to the volume of the liquid collecting cavity 123, the expected flow of the silicon liquid, and the maximum amount of silicon liquid that may occur. Specifically, the depth of the overflow groove 129 should be sufficient to accommodate a certain amount of silicon liquid to prevent the silicon liquid from leaking directly to the outside when the liquid collecting cavity 123 is full, and the width of the overflow groove 129 should be wide enough to allow the silicon liquid to flow smoothly without being blocked.

[0090] The crucible supporting structure 10 provided by the embodiment of the present application provides additional storage space for the silicon liquid through the setting of the overflow groove 129, which can more effectively collect excess silicon liquid, reduce the risk of silicon liquid overflow, and provide greater silicon liquid capacity in a limited volume, thereby optimizing the response capability of the crucible supporting structure 10 to the silicon leakage.

[0091] In some embodiments, as shown in Figure 2 , the crucible support 11 extends in the vertical direction, and the crucible support 12 includes an assembly segment 125 and a chamfer segment 126 connected thereto, the assembly segment 125 extends in the vertical direction, and the assembly segment 125 and the crucible support 11 are connected in vertical abutment.

[0092] In the related art, in some crucible supporting structures, the crucible block and the crucible support are matched at the chamfered position, so that the matching gap between the crucible block and the crucible support is inclined, resulting in a too large matching gap, usually greater than 5 mm. When the matching gap is stressed the most when the silicon material is filled with the melt, it is a dangerous area of silicon infiltration or silicon leakage.

[0093] In this embodiment, as shown in Figure 2 The vertical section of the chamfered section 126 is partially arc-shaped, and specifically, the chamfered section 126 can include a curved portion and a straight wall portion connected between the crucible block 11 and the curved portion, so as to better transition the curved portion and the crucible block 11.

[0094] In some other embodiments, the vertical section of the chamfered section 126 is entirely arc-shaped, and specifically, the tangent line at the uppermost end of the arc shape can be parallel to the vertical direction, thereby providing structural support for the abutting connection of the assembly section 125 and the crucible block 11 in the vertical direction.

[0095] It should be noted that the assembly section 125 and the chamfered section 126 are both sandwich structures, and specifically, the inner side portion of the assembly section 125 and the inner side portion of the chamfered section 126 form the aforementioned first inner support layer, and the outer side portion of the assembly section 125 and the outer side portion of the chamfered section 126 form the aforementioned first outer support layer.

[0096] It can be understood that by abutting and connecting the assembly section 125 and the crucible block 11 in the vertical direction, the matching gap between the crucible block 11 and the crucible support 12 can be significantly reduced compared to the matching at the chamfered position in the prior art. For example, the matching gap in the related art is greater than 5 mm, while the matching gap in the present application can be controlled within 2 mm to 3 mm, greatly reducing the possibility of silicon liquid leakage from the matching gap and improving the sealing performance of the crucible supporting structure 10.

[0097] The crucible supporting structure 10 provided by the embodiments of the present application can significantly reduce the matching gap between the crucible block 11 and the crucible support 12 by the structural design of the abutting and connecting of the assembly section 125 and the crucible block 11 in the vertical direction, greatly reducing the possibility of silicon liquid leakage from the matching gap, thereby improving the sealing performance of the crucible supporting structure 10.

[0098] In some embodiments, as shown in Figure 2As shown, the inner pot 11 further comprises a first connecting rib 115 connected with the first inner pot layer 111 and the first outer pot layer 112, and the first connecting rib 115 is located at the lower end of the inner pot 11. The inner holder 12 further comprises a second connecting rib 127 connected with the second inner holder layer 121 and the second outer holder layer 122, and the second connecting rib 127 is located at the upper end of the assembly section 125. One of the first connecting rib 115 and the second connecting rib 127 is provided with a protrusion 1271, and the other is provided with a groove 1152 for vertically butting against the protrusion 1271.

[0099] The first connecting rib 115 can be connected with the first inner pot layer 111 and the first outer pot layer 112 by integral molding, clamping or other manners, which is not limited herein.

[0100] For example, in some embodiments, the first connecting rib 115, the first inner pot layer 111 and the first outer pot layer 112 are integrally molded by isostatic pressing.

[0101] The second connecting rib 127 can be connected with the first inner holder layer and the first outer holder layer by integral molding, clamping or other manners, which is not limited herein.

[0102] For example, in some embodiments, the second connecting rib 127, the first inner holder layer and the first outer holder layer are integrally molded by isostatic pressing.

[0103] As shown, Figures 1-3 the first connecting rib 115 is connected with the lower end of the first inner pot layer 111 and the first outer pot layer 112, and the second connecting rib 127 is connected with the upper end of the first inner holder layer and the second inner holder layer 121. The first connecting rib 115 is provided with a third overflow hole 1151, and the second connecting rib 127 is provided with a fourth overflow hole 1271. The third overflow hole 1151 and the fourth overflow hole 1271 are vertically opposite and communicate with each other, thereby realizing the communication between the flow guide cavity 113 and the liquid collecting cavity 123.

[0104] The related structural characteristics of the third overflow hole 1151 and the fourth overflow hole 1271 can refer to the description of the first overflow hole 1141 and the second overflow hole 1241, which will not be repeated herein.

[0105] In this embodiment, as shown, Figure 2 the first connecting rib 115 forms the groove 1152, and the second connecting rib 127 is provided with the protrusion 1271 vertically butting against the groove 1152.

[0106] In other embodiments, the first connecting rib 115 forms the protrusion 1271, and the second connecting rib 127 is provided with the groove 1152 vertically butting against the protrusion 1271.

[0107] The crucible supporting structure 10 provided by the embodiments of the present application significantly enhances the connection stability between the crucible 11 and the crucible support 12 through the vertical butt joint of the first connecting rib 115 and the second connecting rib 127 and the cooperation of the protrusion 1271 and the groove 1152. The design can reduce the probability of relative displacement or loosening between the crucible 11 and the crucible support 12 under high temperature or heavy load conditions, and makes the assembly process of the crucible 11 and the crucible support 12 more convenient and efficient. During assembly, the operator only needs to align the protrusion 1271 with the groove 1152, and then perform a simple operation to achieve accurate connection, thereby reducing the assembly difficulty and labor intensity.

[0108] In some embodiments, the first inner crucible layer 111 and the second inner support layer 121 are made of carbon / carbon composite material, the first outer crucible layer 112 and the second outer support layer 122 are made of graphite material, and the crucible 11 further comprises an upper edge section 116, the upper end of the first inner crucible layer 111 and the upper end of the first outer crucible layer 112 are connected through the upper edge section 116, and the upper edge section 116 is made of graphite material.

[0109] As shown in Figure 1 and Figure 2 The upper edge section 116 is connected to the upper ends of the first inner crucible layer 111 and the first outer crucible layer 112, and is used to block the upper opening of the flow guide cavity 113.

[0110] The upper edge section 116 can be connected to the first inner crucible layer 111 and the first outer crucible layer 112 by one-piece forming, clamping or other means, which is not limited here.

[0111] Exemplarily, in the case where the crucible supporting structure 10 comprises the first support rib 114, the second support rib 124, the first connecting rib 115 and the second connecting rib 127, the first support rib 114, the second support rib 124, the first connecting rib 115 and the second connecting rib 127 can be made of carbon / carbon composite material.

[0112] It can be understood that the first inner crucible layer 111 and the second inner crucible layer 121 adopt carbon / carbon composite material, and by using the good mechanical properties, high temperature stability and thermal shock resistance of the carbon / carbon composite material, the first inner crucible layer 111 and the second inner crucible layer 121 can effectively withstand the erosion and thermal stress of the silicon liquid, and protect the internal structure of the crucible from being eroded and damaged by the silicon liquid. At the same time, due to the relatively large porosity of the carbon / carbon composite material, the first inner crucible layer 111 and the second inner crucible layer 121 can absorb impurities or gas in the silicon liquid to some extent, and play a role in purifying the silicon liquid, which is beneficial to improve the quality of single crystal silicon growth. The first outer crucible layer 112 and the second outer crucible layer 122 and the upper edge section 116 adopt graphite material, based on the good electrical conductivity, thermal conductivity and chemical stability of the graphite material, the heat can be quickly and uniformly transferred, so that the temperature distribution in the crucible is more uniform, which is beneficial to the melting and crystallization process of the silicon liquid. In addition, the low porosity characteristics of the graphite material can effectively reduce the leakage of the silicon liquid, and complement the inner layer of the carbon / carbon composite material, thereby improving the overall sealing performance and reliability of the crucible support structure 10.

[0113] The application also provides a crucible assembly.

[0114] In some embodiments, the crucible assembly comprises a crucible and the crucible support structure 10 as in any of the preceding embodiments.

[0115] The crucible is arranged in the crucible support structure 10.

[0116] The crucible assembly provided by the embodiments of the application can effectively guide and collect the leaked silicon liquid, significantly reduce the risk of direct leakage of the silicon liquid and burning through the bottom insulation material, and realize equal stress of the crucible band 11 and the crucible holder 12 by the sandwich design of the crucible band 11 and the crucible holder 12, thereby alleviating the leakage problem caused by excessive local stress, and the crucible support structure 10 can still work normally in the case of slight silicon leakage or silicon leakage, without affecting the single crystal pulling process, thereby improving the production efficiency and product quality while reducing the production cost.

[0117] The application also provides a single crystal furnace.

[0118] In some embodiments, the single crystal furnace comprises a furnace body and the crucible assembly as described above.

[0119] The crucible assembly is arranged in the furnace body.

[0120] The single crystal furnace provided by the embodiment of the present application can effectively guide and collect the leaked silicon liquid, significantly reduces the risk of the silicon liquid directly leaking out and burning through the bottom heat preservation material, provides more reliable thermal field accessory support for single crystal production, and utilizes the sandwich design of the crucible block 11 and the crucible support 12 to realize equal stress of the crucible block 11 and the crucible support 12, relieve the leakage problem caused by excessive local stress, and ensure that the crucible supporting structure 10 can still work normally in the case of slight silicon leakage or silicon leakage, thereby not affecting the single crystal drawing process, improving the production efficiency and product quality, and reducing the production cost.

[0121] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be exchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally a class and do not limit the number of objects, for example, the first object can be one or more. In addition, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / ", generally indicates that the front and rear associated objects are in an "or" relationship.

[0122] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential" and the like are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0123] In the description of the present application, "first feature" and "second feature" can include one or more features.

[0124] In the description of the present application, "a plurality of" means two or more.

[0125] In the description of the present application, "above", "over" and "on" of the first feature to the second feature can include that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact through another feature between them.

[0126] In the description of the present application, "above", "over" and "on" of the first feature to the second feature include that the first feature is directly above and obliquely above the second feature, or only means that the first feature is higher than the second feature in horizontal height.

[0127] Other configurations, such as … and …, and operations according to embodiments of the present application are known to those skilled in the art and are not described in detail here.

[0128] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the exemplary description of the above terms does not necessarily mean the same embodiment or example. Also, the specific features, structures, materials or characteristics described can be combined in any appropriate way in one or more embodiments or examples.

[0129] Although the embodiments of the present application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions, and alterations can be made thereto without departing from the principles and spirit of the application, the scope of which is defined by the claims and their equivalents.

Claims

1. A crucible support structure, characterized by, The application relates to a crucible support structure, comprising: a crucible body, which comprises a first inner crucible layer and a first outer crucible layer connected together, and a flow guide cavity formed between the first inner crucible layer and the first outer crucible layer; a crucible holder, which is installed at the bottom of the crucible body, and comprises a second inner holder layer and a second outer holder layer connected together, and a liquid collecting cavity formed between the second inner holder layer and the second outer holder layer, and the liquid collecting cavity is communicated with the flow guide cavity.

2. The crucible support structure of claim 1, wherein The crucible body further comprises: at least one first supporting rib, which is connected between the first inner crucible layer and the first outer crucible layer, and is used for dividing the flow guide cavity into a plurality of sub-flow guide cavities, and the first supporting rib is provided with a first flow hole, and adjacent two sub-flow guide cavities are communicated through the first flow hole.

3. The crucible support structure of claim 1, wherein The crucible holder further comprises: at least one second supporting rib, which is connected between the second inner holder layer and the second outer holder layer, and is used for dividing the liquid collecting cavity into a plurality of sub-liquid collecting cavities, and the second supporting rib is provided with a second flow hole, and adjacent two sub-liquid collecting cavities are communicated through the second flow hole.

4. The crucible support structure of claim 1, wherein The crucible holder further comprises: a base, which is located at the bottom center of the crucible holder, and one end of the second inner holder layer and the second outer holder layer is connected with the crucible body, and the other end is connected with the side wall of the base; and the liquid collecting cavity is arranged around the base.

5. The crucible support structure of claim 4, wherein A down concave overflow groove is formed between the second outer holder layer and the base and around the base, and the overflow groove is communicated with the liquid collecting cavity.

6. The crucible support structure of any one of claims 1-5, wherein, The crucible body extends in the vertical direction, and the crucible holder comprises an assembly section and a chamfer section connected together, the assembly section extends in the vertical direction, and is connected with the crucible body in the vertical direction.

7. The crucible support structure of claim 6, wherein The crucible body further comprises a first connecting rib connected with the first inner crucible layer and the first outer crucible layer and located at the lower end of the crucible body, and the crucible holder further comprises a second connecting rib connected with the second inner holder layer and the second outer holder layer and located at the upper end of the assembly section, and one of the first connecting rib and the second connecting rib is provided with a protrusion, and the other is provided with a groove used for vertically butting with the protrusion.

8. The crucible support structure of any one of claims 1-5, wherein, The first inner crucible layer and the second inner holder layer are made of carbon / carbon composite material, the first outer crucible layer and the second outer holder layer are made of graphite material, and the crucible body further comprises an upper edge section, and the upper end of the first inner crucible layer and the upper end of the first outer crucible layer are connected through the upper edge section, and the upper edge section is made of graphite material.

9. A crucible assembly characterized by, The application further relates to a crucible assembly, comprising: the crucible support structure as claimed in any one of claims 1-8; a crucible, which is arranged in the crucible support structure.

10. A single crystal furnace characterized by comprising: The application further relates to a furnace body, comprising: the crucible assembly as claimed in claim 9, which is arranged in the furnace body. ​

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