Perovskite etching device

Abstract

The utility model discloses a perovskite etching device, which comprises a shell, an etching piece, an inert gas supply device and a gas collection assembly, the shell is provided with an accommodating cavity for accommodating the perovskite layer; the etching piece is used for etching the perovskite layer; the inert gas supply device is used for blowing inert gas towards the etching position of the perovskite layer so as to remove pollutants generated by etching, and the inert gas supplied by the inert gas supply device fills the accommodating cavity; the gas collection assembly comprises a gas collection port located at one side of the etching position of the perovskite layer, and the gas collection port absorbs gas and pollutants at the etching position. The perovskite etching device provided by the utility model is used for reducing the decomposition and oxidation degree of the perovskite layer during etching and improving the quality of the perovskite layer.

Description

TECHNICAL FIELD

[0001] The utility model relates to perovskite solar cell manufacturing technical field especially relates to a perovskite etching device. BACKGROUND

[0002] Perovskite solar cell has excellent photoelectric conversion efficiency compared with traditional thin film solar cell, and is gradually widely used. Etching operation needs to be carried out on perovskite layer in the manufacturing process of perovskite solar cell to form insulating channel on perovskite layer.

[0003] When etching operation is carried out, the surface layer of perovskite layer is etched, and the perovskite material below the surface layer is exposed after the surface layer of perovskite layer is etched. Perovskite layer generally needs about 20 minutes when etching, and the perovskite material in perovskite layer reacts with water and oxygen in air when exposed to air, thereby accelerating decomposition and oxidation of perovskite material, affecting the performance of perovskite layer and reducing the photoelectric conversion efficiency of prepared perovskite solar cell. SUMMARY

[0004] The utility model discloses a perovskite etching device for reducing the decomposition and oxidation degree of perovskite layer when etching and improving the quality of perovskite layer.

[0005] The utility model discloses the following technical scheme is adopted to realize the purpose:

[0006] A perovskite etching device comprises:

[0007] A shell is provided with a containing cavity for accommodating perovskite layer.

[0008] An etching piece is used for etching perovskite layer.

[0009] An inert gas supply device is used for blowing inert gas towards the etching position of perovskite layer to remove pollutants generated by etching, and the inert gas supplied by the inert gas supply device fills the containing cavity.

[0010] A gas collecting assembly comprises a gas collecting port located on one side of the etching position of perovskite layer, and the gas collecting port absorbs the gas and pollutants of the etching position.

[0011] Preferably, it further comprises a mounting frame, and the etching piece, the inert gas supply device and the gas collecting assembly are respectively installed on the mounting frame, and the etching piece, the inert gas supply device and the gas collecting assembly move synchronously with the mounting frame.

[0012] Preferably, the inert gas supply device and the gas collecting assembly are located on opposite sides of the etching piece.

[0013] Preferably, the etching device is a laser etching device, the etching device emits a laser beam towards the perovskite layer to perform laser etching on the perovskite layer; the inert gas supply device and the gas collection assembly are located on opposite sides of the laser beam.

[0014] Preferably, the horizontal interval between the inert gas supply device and the laser beam is the same as the horizontal interval between the gas collection assembly and the laser beam.

[0015] Preferably, the vertical interval between the inert gas supply device and the perovskite layer is the same as the vertical interval between the gas collection assembly and the perovskite layer.

[0016] Preferably, the horizontal interval between the inert gas supply device and the laser beam and the horizontal interval between the gas collection assembly and the laser beam are 4-6 cm respectively, and the angle between the blowing direction of the inert gas supply device and the horizontal plane is 25-35°.

[0017] The vertical interval between the inert gas supply device and the perovskite layer and the vertical interval between the gas collection assembly and the perovskite layer are 4-6 cm respectively.

[0018] Preferably, the gas collection assembly comprises a gas collection member and a gas collection pipe connected to the gas collection member, the gas collection member comprises opposite first and second ends, the first end of the gas collection member forms the gas collection port and is adjacent to the etching position of the perovskite layer, and the second end of the gas collection member is connected to the gas collection pipe, the gas collection pipe is in communication with an external collection cavity to collect the gas and pollutants collected by the gas collection assembly into the collection cavity.

[0019] Preferably, the gas collection member gradually shrinks from the first end to the second end, and the gas collection member forms a horn-shaped structure.

[0020] Preferably, the support table is provided in the shell and is used for supporting the perovskite layer, and the support table is provided with a positioning part for positioning the perovskite layer.

[0021] Preferably, the positioning part comprises a first abutting part and a second abutting part, and the first abutting part and the second abutting part are used for abutting different sides of the perovskite layer.

[0022] The perovskite layer is provided with a marking part, and when the perovskite layer is installed on the support table, the marking part is adjacent to the positioning part.

[0023] Compared with the prior art, the utility model has at least the following beneficial effects:

[0024] The inert gas supply device is arranged to supply inert gas into the accommodating cavity, so that the concentration of the inert gas in the accommodating cavity is increased, the reaction speed of the exposed perovskite material on the perovskite layer with water and oxygen is reduced, the decomposition and oxidation of the perovskite material are inhibited, the performance of the perovskite layer after etching is improved, and the photoelectric conversion efficiency of the perovskite solar cell formed by using the perovskite layer is ensured. Through the cooperation of the inert gas supply device and the gas collecting assembly, the pollutants generated in the etching process are further removed in time, the influence of the pollutants on the etching operation is prevented, and the quality of the perovskite layer is ensured. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 is a structure schematic view of a perovskite etching device according to an embodiment of the present application;

[0026] Figure 2 is a partial structure schematic view of a perovskite etching device according to an embodiment of the present application;

[0027] Figure 3 is another partial structure schematic view of a perovskite etching device according to an embodiment of the present application;

[0028] Figure 4 is a structure schematic view of a support table and a perovskite layer according to an embodiment of the present application;

[0029] Figure 5 is a structure schematic view of a support table according to an embodiment of the present application.

[0030] In the figure: 100, perovskite layer; 101, marking part; 1, shell; 11, accommodating cavity; 2, etching piece; 21, laser beam; 3, inert gas supply device; 31, gas supply piece; 311, gas outlet; 32, connecting pipe; 4, gas collecting assembly; 41, gas collecting piece; 42, gas collecting pipe; 43, gas collecting port; 5, support table; 51, positioning part; 511, first abutting part; 512, second abutting part; 52, vacuum suction port. DETAILED DESCRIPTION

[0031] Example implementations will now be described more fully with reference to the accompanying drawings. Example implementations can be implemented in any number of manners, and are not limited to the embodiments described herein; rather, these embodiments are provided so that this application will be thorough and complete, and will fully convey the concept of example implementations to those skilled in the art. Like reference numerals refer to like elements throughout the drawings, and a repeated description will be omitted.

[0032] The words expressing position and direction described in the present application are illustrated by taking the drawings as an example, but changes can also be made as needed, and the changes made are included in the protection scope of the present application.

[0033] As Figure 1 and Figure 2 The utility model provides a perovskite etching device for etching perovskite layer 100. The perovskite etching device includes a housing 1, an etching element 2, an inert gas supply device 3, and a gas collection assembly 4. It can also include a mounting rack (not shown) and a support table 5.

[0034] The housing 1 has a receiving cavity 11 for receiving at least part of the etching element 2, at least part of the inert gas supply device 3, at least part of the gas collection assembly 4, at least part of the mounting rack, and the support table 5. When etching the perovskite layer 100, the perovskite layer 100 is placed in the receiving cavity 11. The housing 1 can be provided with a switch door. When the switch door is opened, the receiving cavity 11 in the housing 1 is in communication with the outside world. At this time, the perovskite layer 100 can be placed in the receiving cavity 11 or taken out of the receiving cavity 11. When the switch door is closed, the receiving cavity 11 in the housing 1 can form a sealed chamber. When the switch door is closed, due to processing errors and other reasons, there may be a small gap at the connection between the side walls of the housing 1, the connection between the switch door and the main body of the housing 1, etc. At this time, the receiving cavity 11 in the housing 1 can also not be a completely sealed chamber.

[0035] The etching element 2 is used for etching the perovskite layer 100. The etching element 2 can be a laser etching element 2. The etching element 2 can emit a laser beam 21 towards the perovskite layer 100. The laser beam 21 performs laser etching on the perovskite layer 100 to form an insulating channel on the perovskite layer 100. The etching element 2 can be directly opposite the perovskite layer 100, and the etching element 2 can emit a laser beam 21 perpendicular to the perovskite layer 100. The etching element 2 can be received in the receiving cavity 11.

[0036] The inert gas supply device 3 is used for blowing inert gas towards the etching position of the perovskite layer 100. When the etching element 2 etches the perovskite layer 100, dust, impurities, and other pollutants will be generated. The inert gas supply device 3 can blow up the dust, impurities, and other pollutants to clean them. The inert gas supplied by the inert gas supply device 3 can fill the receiving cavity 11, increasing the concentration of inert gas in the receiving cavity 11. At this time, the content of water and oxygen in the receiving cavity 11 is reduced, which can effectively inhibit the oxidation and decomposition of perovskite materials and improve the quality of the perovskite layer 100. The inert gas supplied by the inert gas supply device 3 can be nitrogen.

[0037] The horizontal interval between the inert gas supply device 3 and the laser beam 21 generated by the etching member 2 can be 4-6 cm, preferably 5 cm. The vertical interval between the inert gas supply device 3 and the perovskite layer 100 can be 4-6 cm, preferably 5 cm. The angle between the blowing direction of the inert gas supply device 3 and the horizontal plane can be 25-35°, preferably 30°. In the present embodiment, the upper surface of the perovskite layer 100 can be the horizontal plane, and the angle between the blowing direction of the inert gas supply device 3 and the upper surface of the perovskite layer 100 is 25-35°, preferably 30°.

[0038] With reference to Figure 1 and Figure 3 , the inert gas supply device 3 can specifically include a gas supply member 31 and a connecting pipe 32, one end of the connecting pipe 32 can extend to the outside of the housing 1 and be connected with an external inert gas generating member, and the other end of the connecting pipe 32 is connected with the gas supply member 31. The external inert gas generating member provides inert gas to the gas supply member 31 through the connecting pipe 32. The gas supply member 31 is accommodated in the accommodating cavity 11, and one end of the gas supply member 31 is connected with the connecting pipe 32, and the other end forms a gas outlet 311, and the inert gas provided to the gas supply member 31 is blown out from the gas outlet 311.

[0039] The horizontal interval between the inert gas supply device 3 and the laser beam 21 is the horizontal interval between the gas supply member 31 and the laser beam 21, and the vertical interval between the inert gas supply device 3 and the perovskite layer 100 is the vertical interval between the gas supply member 31 and the perovskite layer 100. The gas supply member 31 can be inclinedly arranged, and the angle between the gas supply member 31 and the horizontal plane can be 25-35°, thereby facilitating the inert gas to be blown out at an angle of 25-35° with the horizontal plane. The connecting pipe 32 can be a hose, and a certain length of the connecting pipe 32 can be reserved to prevent the connecting pipe 32 from being disconnected from the gas supply member 31 or the inert gas generating member when the inert gas supply device 3 moves.

[0040] With reference to Figure 1 and Figure 3 , the gas collecting assembly 4 is provided with a gas collecting port 43 located on the side of the etching position of the perovskite layer 100, and the gas collecting assembly 4 can absorb the gas at the etching position of the perovskite layer 100 and the pollutants mixed in the gas through the gas collecting port 43. Therefore, after the pollutants generated during the etching process are purged by the inert gas supply device 3, they are absorbed by the gas collecting assembly 4 and then discharged out of the accommodating cavity 11, preventing the pollutants from accumulating in the accommodating cavity 11 and affecting the etching operation of the perovskite layer 100.

[0041] The horizontal distance between the gas collection assembly 4 and the laser beam 21 generated by the etching member 2 can be 4-6 cm, preferably 5 cm. The vertical distance between the gas collection assembly 4 and the perovskite layer 100 can be 4-6 cm, preferably 5 cm. In addition, the gas collection assembly 4 and the inert gas supply device 3 can be located on opposite sides of the etching member 2, specifically, the gas collection assembly 4 and the inert gas supply device 3 can be located on opposite sides of the laser beam 21 generated by the etching member 2, so as to optimize the flow path of the gas between the gas collection assembly 4 and the inert gas supply device 3, and facilitate the collection of the gas and the contaminants at the etching position by the gas collection assembly 4. Preferably, the horizontal distance between the inert gas supply device 3 and the laser beam 21 can be the same as the horizontal distance between the gas collection assembly 4 and the laser beam 21; the vertical distance between the inert gas supply device 3 and the perovskite layer 100 can be the same as the vertical distance between the gas collection assembly 4 and the perovskite layer 100.

[0042] The gas collection assembly 4 includes a gas collection member 41 and a gas collection pipe 42 connected to the gas collection member 41. The gas collection member 41 is accommodated in the accommodating cavity 11 of the shell 1, and includes opposite first and second ends. The first end of the gas collection member 41 is adjacent to the etching position of the perovskite layer 100, i.e., adjacent to the laser beam 21. The first end of the gas collection member 41 is provided with a gas collection port 43, and the gas and the contaminants at the etching position of the perovskite layer 100 are sucked into the gas collection member 41 from the gas collection port 43 of the first end of the gas collection member 41. The second end of the gas collection member 41 is connected to the gas collection pipe 42, and the gas collection pipe 42 is connected to an external collection cavity. The gas and the contaminants sucked into the gas collection member 41 are collected into the external collection cavity through the gas collection pipe 42. Preferably, the gas collection member 41 is gradually tapered from the first end to the second end, and forms a horn-shaped structure. By setting the gas collection member 41 to be gradually tapered from the first end to the second end, the gas and the contaminants collected by the gas collection member 41 are gradually converged and guided when flowing in the gas collection member 41, thereby facilitating the flow of the contaminants and the gas.

[0043] The horizontal distance between the gas collection assembly 4 and the laser beam 21 is the horizontal distance between the gas collection member 41 and the laser beam 21, and the vertical distance between the gas collection assembly 4 and the perovskite layer 100 is the vertical distance between the gas collection member 41 and the perovskite layer 100. The gas collection pipe 42 can be a hose, and a certain length of the gas collection pipe 42 can be reserved to prevent the gas collection pipe 42 from being excessively pulled and separated from the gas collection member 41 when the gas collection assembly 4 moves.

[0044] In the etching process, the opening and closing door of the shell 1 is closed, and the accommodating cavity 11 in the shell 1 is in a sealed state, or the accommodating cavity 11 is connected with the outside through a narrow gap caused by the machining error of the shell 1 and the like, so that the accommodating cavity 11 is approximately in a sealed state. When the inert gas supply device 3 blows out the inert gas to the etching position, part of the inert gas is absorbed by the gas collection assembly 4, and the remaining part of the inert gas fills in the accommodating cavity 11, so that the concentration of the inert gas in the accommodating cavity 11 gradually increases, the speed of the reaction of the exposed perovskite material on the perovskite layer 100 with water and oxygen is reduced, the decomposition and oxidation of the perovskite material are inhibited, and then the performance of the perovskite layer 100 after etching is improved, and the photoelectric conversion efficiency of the perovskite solar cell formed by using the perovskite layer 100 is ensured.

[0045] In addition, in the etching process, the etching piece 2 needs to move to etch different positions of the perovskite layer 100 to form a plurality of parallel and spaced insulating channels on the perovskite layer 100. In the moving process of the etching piece 2, the position of the perovskite layer 100 etched by the etching piece 2 also changes, at this time, the inert gas supply device 3 and the gas collection assembly 4 move with the etching piece 2, so that the inert gas supply device 3 can blow inert gas to the etching position in real time, and the gas collection assembly 4 can absorb the gas and pollutants of the etching position in real time.

[0046] In order to make the etching piece 2, the inert gas supply device 3 and the gas collection assembly 4 move synchronously, the perovskite etching device is provided with a mounting rack, and the etching piece 2, the inert gas supply device 3 and the gas collection assembly 4 are respectively installed on the mounting rack. The mounting rack is connected with a driving piece, and the mounting rack moves along the etching path of the etching piece 2 under the driving of the driving piece, so that the etching piece 2, the inert gas supply device 3 and the gas collection assembly 4 mounted on the mounting rack move synchronously along the etching path. The mounting rack is a mounting rack structure composed of one or more plate bodies, and the driving piece can drive a motor, a driving cylinder and the like driving structure.

[0047] In addition, in other embodiments, the etching piece 2, the inert gas supply device 3 and the gas collection assembly 4 can also not be installed on the same mounting rack, and the etching piece 2, the inert gas supply device 3 and the gas collection assembly 4 can be respectively connected with corresponding driving pieces, and move synchronously under the driving of the corresponding driving pieces.

[0048] Reference Figure 4 and Figure 5The support table 5 is arranged in the shell 1 and is used for supporting the perovskite layer 100. A plurality of vacuum suction ports 52 can be arranged on the support table 5, and the vacuum suction ports 52 can be connected with the vacuum generating device and can generate suction force under the action of the vacuum generating device. When the perovskite layer 100 is placed on the support table 5, the vacuum suction ports 52 can generate adsorption force to adsorb and fix the perovskite layer 100.

[0049] In order to facilitate positioning of the perovskite layer 100, the support table 5 can be provided with a positioning portion 51. When the perovskite layer 100 is placed, the perovskite layer 100 can abut against the positioning portion 51 to limit further movement of the perovskite layer 100 and complete positioning of the perovskite layer 100, and when the perovskite layer 100 abuts against the positioning portion 51, the perovskite layer 100 is in the required position. Through the limiting of the positioning portion 51, the placement of the perovskite layer 100 is completed conveniently and quickly. The positioning portion 51 can include a first abutting portion 511 and a second abutting portion 512, and the first abutting portion 511 and the second abutting portion 512 can be used to abut against different side edges of the perovskite layer 100 to position different directions of the perovskite layer 100. The first abutting portion 511 and the second abutting portion 512 can be perpendicular to each other and integrally connected.

[0050] The perovskite layer 100 can be provided with a marking portion 101, and the marking portion 101 can be arranged at a corner of the perovskite layer 100. When the perovskite layer 100 is installed on the support table 5, the marking portion 101 faces upward and is adjacent to the positioning portion 51. The marking portion 101 is arranged to indicate the placement direction of the perovskite layer 100, so as to prevent incorrect placement positions such as reverse placement of the perovskite layer 100.

[0051] When etching operation needs to be performed on the perovskite layer 100, the switch door of the shell 1 is opened, the perovskite layer 100 is placed on the support table 5, the marking portion 101 of the perovskite layer 100 faces upward and is positioned with the positioning portion 51, the perovskite layer 100 abuts against the positioning portion 51, the vacuum suction port 52 of the support table 5 adsorbs and fixes the perovskite layer 100, and the switch door is closed. The inert gas supply device 3, the gas collecting assembly 4 and the etching piece 2 are opened, and the inert gas supply device 3, the gas collecting assembly 4 and the etching piece 2 are driven to move along the etching path to complete the etching operation on the perovskite layer 100.

[0052] Although the embodiments of the present application have been shown and described above, it should be understood that the above embodiments are exemplary and should not be construed as limiting the present application. Those skilled in the art can make changes, modifications, replacements and variations to the above embodiments without departing from the principles and purposes of the present application, and all these changes should be within the scope of the present application.

Claims

1. A perovskite etching apparatus, characterized by, The application relates to a device for etching a perovskite layer (100), comprising: a housing (1) provided with a containing cavity (11) for containing the perovskite layer (100); an etching member (2) for etching the perovskite layer (100); an inert gas supply device (3) for blowing inert gas towards an etching position of the perovskite layer (100) to remove contaminants generated by etching, the inert gas supplied by the inert gas supply device (3) filling the containing cavity (11); a gas collection assembly (4) comprising a gas collection port (43) located on one side of the etching position of the perovskite layer (100), the gas collection port (43) sucking gas and contaminants at the etching position.

2. The perovskite etching apparatus of claim 1, wherein, Further comprising a mounting frame, the etching member (2), the inert gas supply device (3) and the gas collection assembly (4) are respectively mounted on the mounting frame, and the etching member (2), the inert gas supply device (3) and the gas collection assembly (4) move synchronously with the mounting frame.

3. The perovskite etching apparatus of claim 1, wherein, The inert gas supply device (3) and the gas collection assembly (4) are located on opposite sides of the etching member (2).

4. The perovskite etching apparatus of claim 3, wherein, The etching member (2) is a laser etching member (2), the etching member (2) emits a laser beam (21) towards the perovskite layer (100) to perform laser etching on the perovskite layer (100), and the inert gas supply device (3) and the gas collection assembly (4) are located on opposite sides of the laser beam (21).

5. The perovskite etching apparatus of claim 4, wherein, The horizontal interval between the inert gas supply device (3) and the laser beam (21) is the same as the horizontal interval between the gas collection assembly (4) and the laser beam (21). And / or, the vertical interval between the inert gas supply device (3) and the perovskite layer (100) is the same as the vertical interval between the gas collection assembly (4) and the perovskite layer (100).

6. The perovskite etching apparatus of claim 4, wherein, The horizontal interval between the inert gas supply device (3) and the laser beam (21) and the horizontal interval between the gas collection assembly (4) and the laser beam (21) are respectively 4-6 cm, and the included angle between the blowing direction of the inert gas supply device (3) and the horizontal plane is 25-35 degrees. The vertical interval between the inert gas supply device (3) and the perovskite layer (100) and the vertical interval between the gas collection assembly (4) and the perovskite layer (100) are respectively 4-6 cm.

7. The perovskite etching apparatus of claim 1, wherein, The gas collection assembly (4) comprises a gas collection member (41) and a gas collection pipe (42) connected with the gas collection member (41), the gas collection member (41) comprises opposite first and second ends, the first end of the gas collection member (41) forms the gas collection port (43) and is adjacent to the etching position of the perovskite layer (100), the second end of the gas collection member (41) is connected with the gas collection pipe (42), and the gas collection pipe (42) is in communication with an external collection cavity to collect gas and contaminants collected by the gas collection assembly (4) into the collection cavity.

8. The perovskite etching apparatus of claim 7, wherein, The gas collection member (41) is gradually tapered from the first end towards the second end, and the gas collection member (41) forms a horn-shaped structure.

9. The perovskite etching apparatus of claim 1, wherein, Further comprising a support table (5) arranged in the shell (1) and used for supporting the perovskite layer (100), the support table (5) is provided with a positioning portion (51) used for positioning the perovskite layer (100).

10. The perovskite etching apparatus of claim 9, wherein, The positioning portion (51) comprises a first abutting portion (511) and a second abutting portion (512), the first abutting portion (511) and the second abutting portion (512) are used for abutting different side edges of the perovskite layer (100); The perovskite layer (100) is provided with a marking portion (101), when the perovskite layer (100) is installed on the support table (5), the marking portion (101) is adjacent to the positioning portion (51).

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