Chemical mechanical polishing equipment with crystal cleaning device

Abstract

The utility model provides chemical mechanical grinding equipment with a crystal cleaning device. The chemical mechanical grinding equipment comprises a grinding disc, a grinding pad, a grinding head, a grinding frame, a grinding pad adjuster and a grinding liquid supplier, and at least one group of crystal cleaning device is also arranged, and the crystal cleaning device is used for washing the grinding frame, the grinding pad adjuster and the grinding liquid supplier. By additionally arranging the crystal cleaning device, the surfaces of the grinding frame, the grinding pad adjuster and the grinding liquid supplier which are prone to generating crystal substances are flushed, and scratches of wafers can be effectively reduced.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a chemical mechanical polishing apparatus with a crystallization cleaning device. Background Technology

[0002] Chemical mechanical polishing (CMP) is a powerful manufacturing technique that uses chemical oxidation and mechanical polishing to remove material and achieve a high level of flatness. This technique is widely used in semiconductor manufacturing for the selective removal of material to achieve flattened topography and the formation of device structures.

[0003] The equipment used for chemical mechanical polishing (CMP) technology generally includes components such as a polishing head, polishing disc, polishing pad, polishing head cleaning unit, polishing cross, pad conditioner, and polishing slurry supply. During the polishing process, the polishing slurry and byproducts from the wafer polishing process inevitably contaminate the equipment components. Furthermore, after each polishing cycle, the polishing pad is typically rinsed with high-pressure water; the splashes and steam from this process carry slurry or polishing byproducts that adhere to the surfaces of various components. Since both the polishing slurry and byproducts from the wafer polishing process are prone to crystallization, these crystals, after adhering to the component surfaces and slowly drying, may fall off during production, potentially scratching the wafer.

[0004] It should be noted that the above introduction to the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of this application and facilitating understanding by those skilled in the art. It should not be assumed that these technical solutions are known to those skilled in the art simply because they have been described in the background section of this application. Utility Model Content

[0005] To solve all or part of the problems of the prior art, this utility model provides a chemical mechanical polishing device with a crystallization cleaning device, including a polishing disc, a polishing pad, a polishing head, a polishing frame, a polishing pad adjuster, and a polishing fluid supplier.

[0006] At least one set of crystal cleaning devices is also provided, which are used to rinse the grinding rack, grinding pad adjuster, and grinding slurry supplier. By adding crystal cleaning devices to rinse the surfaces of the grinding rack, grinding pad adjuster, and grinding slurry supplier, which are prone to crystal formation, scratches on the wafer can be effectively reduced.

[0007] The crystallization cleaning device includes a base and multiple nozzles disposed on the base. These nozzles spray liquid to clean the grinding frame, grinding pad adjuster, and grinding fluid supply. The multiple nozzles ensure uniform and thorough rinsing of the surfaces of the grinding frame, grinding pad adjuster, and grinding fluid supply, minimizing crystal formation.

[0008] The crystallization cleaning device is installed above the baffle base of the grinding pad adjuster. The actual installation position of the crystallization cleaning device can be determined according to the actual situation. Installing the crystallization cleaning device above the baffle base of the grinding pad adjuster can achieve rinsing of the surfaces of the grinding rack, grinding pad adjuster and grinding fluid supply without hindering the normal operation of the CMP machine.

[0009] The base includes a fixing part and a cavity; the fixing part is used to fix the crystallization cleaning device; the cavity is a hollow shell structure, with at least one water inlet at the bottom for connecting to an external water source, and multiple water outlets at the top for connecting to the nozzles. The fixing part facilitates the installation of the crystallization cleaning device, while the cavity allows one water inlet to supply multiple nozzles, reducing the hassle of individual water supply.

[0010] The nozzle is an adjustable nozzle. Adjustable nozzles allow for easy adjustment of the spray height, angle, and water volume, enabling adjustments based on actual conditions to ensure effective cleaning of the grinding frame, grinding pad adjuster, and grinding fluid supply.

[0011] The adjustable nozzle includes a nozzle mounting base and a nozzle. The nozzle mounting base connects the water outlet and the nozzle, and the nozzle mounting base is formed by combining two rotary joints. The structure is simple and the modification cost is low.

[0012] The inlet of the crystallization cleaning device is connected to the high-pressure water pipeline of the polishing slurry supplier. This reduces the cost of modification and allows for the simultaneous rinsing of the polishing frame, polishing pad adjuster, and polishing slurry supplier while the polishing pad is being high-pressure rinsed by the polishing slurry supplier.

[0013] A pressure regulating valve is installed between the water inlet of the crystallization cleaning device and the high-pressure water pipeline of the grinding fluid supplier. This valve allows for adjustment of the rinsing effect of the crystallization cleaning device.

[0014] The grinding frame has a cross-shaped structure, and a grinding head is provided at each of the four ends of the grinding frame.

[0015] The fixing part and the cavity are integrally formed.

[0016] Compared with the prior art, the main beneficial effects of this utility model are: it provides a chemical mechanical polishing equipment with a crystallization cleaning device, which can effectively reduce wafer scratches by rinsing the surfaces of the polishing rack, polishing pad adjuster and polishing fluid supply that are prone to crystal formation; the crystallization cleaning device has a simple structure, is easy to modify and has good compatibility with existing equipment. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the specific embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the structure of an existing chemical mechanical grinding device.

[0019] Figure 2 This is a schematic diagram of the working process of a chemical mechanical grinding (CMP) machine.

[0020] Figure 3 This is a schematic diagram of the crystallization cleaning device provided in this embodiment. Detailed Implementation

[0021] The foregoing and other technical contents, features, and effects of this utility model will be clearly presented in the following detailed description of the preferred embodiments with reference to the accompanying drawings. The directional terms mentioned in the following embodiments, such as up, down, left, right, front, or back, are only for reference to the accompanying drawings. Therefore, the directional terms used are for illustrative purposes and not for limiting the scope of this utility model.

[0022] Example 1:

[0023] Figure 1 This is a schematic diagram of a chemical mechanical grinding device in the prior art. (Reference) Figure 1 In this embodiment, taking the AMAT Reflexion LK CMP polishing machine as an example, the CMP equipment includes multiple polishing zones, each including a polishing disc 10 with a polishing pad 11 fixed on it; a polishing head 12, used to perform CMP processing on the wafer in conjunction with the polishing pad 11; a polishing pad adjuster 14, mainly used to level the polishing pad 11 to ensure the stability of the CMP process; and a polishing slurry supplier 15, mainly used to provide polishing slurry or other cleaning solutions. (Reference) Figure 1It can be observed that this equipment has three grinding zones, i.e., three grinding discs 10, each equipped with a grinding pad adjuster 14 and a grinding fluid supply 15. Furthermore, the equipment has four grinding heads 12, which are respectively located at the four ends of a cross-shaped grinding frame 13. The grinding head 12 can be switched between different grinding discs 10 via the grinding frame 13. The three grinding zones of this CMP equipment can perform CMP processing simultaneously, and the remaining grinding heads 12 can be used as preparation during the processing, such as for cleaning or other treatments.

[0024] refer to Figure 2 Taking one grinding zone as an example, a grinding pad 11 is fixed on the grinding disk 10, and a wafer 2 is fixed to the bottom of the grinding head 12. During the grinding process, the grinding head 12 is subjected to a certain pressure to make the wafer 2 contact the grinding pad 11. Grinding slurry is supplied to the surface of the grinding pad 11 through the grinding slurry supply 15 (not shown in the figure). Through the relative movement of the grinding head 12 and the grinding disk 10, combined with the supplied grinding slurry, the wafer 2 is subjected to CMP treatment. During this process, the grinding pad adjuster 14 also contacts the grinding pad 11 and adjusts the grinding pad 11 to a suitable state. The grinding pad adjuster 14 typically includes an adjustment disk 140 and a grinding pad adjustment arm 141 connected to the grinding pad adjustment disk 140. Typically, the grinding pad adjustment disk 140 is a diamond disk, which can selectively press against the grinding pad 11 to make its surface flatness meet the process requirements. After the CMP treatment of the wafer 2 is completed, the grinding pad 11 is usually rinsed with high-pressure water through the grinding slurry supply 15. As described above, during the processing of wafer 2 and the rinsing process after processing, the surfaces of the polishing rack 13, the polishing pad adjuster 14, and the polishing fluid supply 15 are easily covered by splashed water and moisture, which accumulate over time to form crystals on their surfaces. The shedding of these crystals may scratch wafer 2 in subsequent processes.

[0025] In existing technologies, the above-mentioned problems are usually avoided by using a timed replacement and cleaning method. That is, depending on the replacement time of consumables for different processes (approximately 2 to 6 days), the surfaces of the grinding rack 13, the grinding pad adjuster 14, and the grinding fluid supply 15 are cleaned at the same time as the consumables are replaced. However, timed replacement is difficult to solve the crystallization problem. If the replacement cycle is too long, the risk of crystals falling off increases. If the replacement cycle is shortened, production costs and production efficiency increase.

[0026] In this embodiment, in order to solve the problem of crystals on the surface of the components, we set at least one crystal cleaning device 3 in the CMP equipment. Specifically, a crystal cleaning device 3 can be set in each of the three grinding zones, which can rinse the surface of each component at any appropriate time to remove those by-products that have not yet dried.

[0027] Taking the setting of one of the grinding zones as an example, refer to Figure 3 , Figure 3 In the diagram, 'a' is a top view of the crystallization cleaning device 3. Figure 3 In the diagram, b is a bottom view of the crystallization cleaning device 3. Specifically, the crystallization cleaning device 3 includes a base 31 and multiple nozzles 32 disposed on the base 31; the base 31 consists of a fixing part 311 and a cavity 310; a portion of the cavity 310 is connected to or integrally formed with the fixing part 311, which is used to fix the crystallization cleaning device 3 to the installation position, and can usually be connected by bolts; in this embodiment, the crystallization cleaning device 3 is installed above the baffle base of the abrasive pad adjuster 14; the cavity 310 is a hollow shell structure, and at least one water inlet 312 is provided at its bottom (e.g., Figure 3 (b) is used to connect to an external water source. The top of the cavity 310 has multiple water outlets, which are used to house nozzles 32. External water enters the cavity 310 through the inlet 312 and is then sprayed out through the nozzles 32. By simply controlling the direction of the nozzles 32, the areas requiring rinsing can be rinsed. In this embodiment, the nozzles 32 are used to rinse the surfaces of the grinding frame 13, the grinding pad adjuster 14, and the grinding fluid supplier 15, respectively.

[0028] To facilitate adjustment of the rinsing area, nozzle 32 is configured as an adjustable nozzle to allow for adjustment of the spray height / angle. Specifically, the adjustable nozzle includes a nozzle mounting base and a nozzle. One end of the nozzle mounting base is connected to the water outlet, and the other end is connected to the nozzle. The nozzle mounting base is formed by combining two rotary joints.

[0029] To minimize modifications, the inlet 312 of the crystallization cleaning device 3 can be connected to the high-pressure water line of the polishing slurry supplier 15. This allows the crystallization cleaning device 3 to simultaneously rinse the polishing rack 13, polishing pad adjuster 14, and polishing slurry supplier 15 after each polishing cycle, while the polishing slurry supplier 15 uses high-pressure water to clean the pads. A pressure regulating valve is installed between the inlet of the crystallization cleaning device and the high-pressure water line of the polishing slurry supplier to adjust the rinsing pressure.

[0030] The common English terms or letters used in this invention for the purpose of clarity are for illustrative purposes only and are not intended to be limiting or specific. They should not be used to limit the scope of protection of this invention based on their possible Chinese translations or specific letters.

[0031] It should also be noted that in this article, relational terms such as “first” and “second” are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

Claims

1. A chemical mechanical grinding apparatus with a crystallization cleaning device, characterized in that, The polishing system comprises a polishing disc, a polishing pad, a polishing head, a polishing frame, a polishing pad adjuster and a polishing liquid supplier. At least one set of crystallization cleaning device is arranged to flush the polishing frame, the polishing pad adjuster and the polishing liquid supplier.

2. The chemical mechanical polishing apparatus having a crystallization cleaning device according to claim 1, wherein The crystallization cleaning device comprises a base and a plurality of nozzles arranged on the base, and the nozzles are used to spray liquid to clean the polishing frame, the polishing pad adjuster and the polishing liquid supplier.

3. The CMP apparatus having a crystallization cleaning device according to claim 2, wherein The crystallization cleaning device is installed above the baffle base of the polishing pad adjuster.

4. The CMP apparatus having a crystallization cleaning device according to claim 2, wherein The base comprises a fixed part and a cavity. The fixed part is used to fix the crystallization cleaning device. The cavity is a hollow shell structure, and the bottom of the cavity is provided with at least one water inlet for connecting to an external water source, and the top of the cavity is provided with a plurality of water outlets for connecting to the nozzles.

5. The CMP apparatus having a crystallization cleaning device according to claim 4, wherein The nozzles are adjustable nozzles.

6. The chemical mechanical polishing apparatus having a crystallization cleaning device according to claim 5, wherein The adjustable nozzles comprise nozzle mounting seats and nozzles, and the water outlets are connected to the nozzles through the nozzle mounting seats.

7. The CMP apparatus having a crystallization cleaning device according to claim 6, wherein The nozzle mounting seats are obtained by combining two rotary joints.

8. The CMP apparatus having a crystallization cleaning device according to claim 7, wherein The water inlet of the crystallization cleaning device is connected to the high-pressure water pipeline of the polishing liquid supplier.

9. The CMP apparatus having a crystallization cleaning device according to claim 1, wherein A pressure regulating valve is arranged between the water inlet of the crystallization cleaning device and the high-pressure water pipeline of the polishing liquid supplier.

10. The CMP apparatus having a crystallization cleaning device according to claim 4, wherein The polishing frame is a cross-shaped structure, and four ends of the polishing frame are respectively provided with one polishing head. The fixed part and the cavity are integrally formed.

Images