Joining tool

Abstract

The embodiment of the utility model provides a joint tool. The joint tool comprises a processing chamber and a joint clamp in the processing chamber, the joint clamp comprises a suction cup assembly, an expandable force application structure in a groove of the suction cup assembly, a vacuum port structure penetrating through the suction cup assembly and the expandable force application structure, and a gas inlet port structure penetrating through the suction cup assembly and entering the expandable force application structure. The vacuum port structure provides a vacuum force to maintain the bonding region of the semiconductor substrate on the expandable force application structure, and the gas inlet port structure provides a pressurized gas to expand the expandable force application structure to form a convex bend protruding to the outside of the groove along the outer surface of the expandable force application structure, and providing a force that deforms the bonding region of the semiconductor substrate during a bonding operation of the semiconductor substrate with another semiconductor substrate. Force in the bonding region of the semiconductor substrate is uniformly distributed by controlling the expansion rate and pressure of the expandable force application structure.

Description

Technical Field

[0001] Embodiments of this utility model relate to a semiconductor processing tool, and more particularly to a bonding tool. Background Technology

[0002] Three-dimensional integrated circuits (3DICs) represent the latest advancement in semiconductor packaging technology. In 3D ICs, multiple semiconductor dies are stacked on top of each other (e.g., using package-on-package (PoP), system-in-package (SiP), and / or stacked die packaging technologies). Due to the reduced interconnect length between stacked dies, 3DICs offer improved integration density and other advantages (such as faster speeds and higher bandwidth). Some methods for forming 3DICs involve bonding two semiconductor wafers together. For example, fusion bonding, eutectic bonding, and / or hybrid bonding can be used to bond the wafers together. Utility Model Content

[0003] An embodiment of this utility model provides a bonding tool including a processing chamber and a bonding jig located in the processing chamber and configured to hold a semiconductor substrate. The bonding jig includes a suction cup assembly, an expandable force-applying structure located in a groove of the suction cup assembly, a vacuum port structure passing through the suction cup assembly and the expandable force-applying structure, and a gas inlet port structure passing through the suction cup assembly and entering the expandable force-applying structure. The vacuum port structure is configured to provide a vacuum force that holds the bonding area of ​​the semiconductor substrate on the expandable force-applying structure. The gas inlet port structure is configured to provide pressurized gas to cause the expandable force-applying structure to expand and form a convex bend protruding out of the groove along the outer surface of the expandable force-applying structure, and to provide a force that deforms the bonding area of ​​the semiconductor substrate during a bonding operation that connects the semiconductor substrate to another semiconductor substrate.

[0004] Based on the above, the bonding tool of this embodiment includes an expandable force-applying structure. When pressure is applied, the expandable force-applying structure has a curved surface protruding from the underside of the top bonding jig to deform the semiconductor substrate during the bonding operation. The expansion rate and / or pressure within the expandable force-applying structure can be controlled to distribute the force more uniformly in the bonding area of ​​the semiconductor substrate relative to another bonding tool having an impact pin. In this way, the bonding tool can generate a more controlled bonding wave to improve overlap performance. Improved overlap performance can increase product yield and reduce the amount of resources required to manufacture large quantities of products.

[0005] To make the above features and advantages of the embodiments of this utility model more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description

[0006] Figure 1 This is a diagram of the instance-based joining tools described in this article.

[0007] Figure 2A and Figure 2B This is a diagram illustrating an exemplary embodiment of the processing chamber of the joining tool described herein.

[0008] Figures 3A to 3D This is a diagram illustrating an exemplary implementation of the joining tool described in this article.

[0009] Figure 4 This is a diagram illustrating an exemplary implementation described in this article.

[0010] Figure 5 This is a flowchart of an example process associated with bonding to a semiconductor substrate.

[0011] Figure 6 This is a flowchart of an example process associated with bonding to a semiconductor substrate.

[0012] Explanation of reference numerals in the attached figures

[0013] 100: Joining tool; 102, 104: Processing chamber; 106: Loading port; 108: Transport vehicle; 110: Controller; 200, 300, 400: Implementation method; 202, 202a, 202b: Joining fixture; 204, 204a, 204b: Semiconductor substrate; 206, 206a, 206b: Suction cup assembly; 208, 208a, 208b: Vacuum pad structure; 210, 210a, 210b, 228, 228a, 228b: Vacuum supply system; 212, 232: Vacuum force; 214, 214a, 214b: Expandable force application structure; 216, 216a, 216b: Gas inlet port structure; 21 8, 218a, 218b: Gas supply system; 220, 220a, 220b, 230, 230a, 230b: Sleeve assembly; 222, 222a, 222b: Pressurized gas; 224, 224a, 224b: Convex bend; 226, 226a, 226b: Vacuum port structure; 234: Sensor system; 236: Optical signal; 238: Radial pattern; 402: Force application assembly; 500, 600: Process; 510, 520, 530, 540, 550, 560, 570, 610, 620, 630, 640: Blocks; AA: Profile line / reference profile line; D1, D2, D3: Width; D4: Distance. Detailed Implementation

[0014] The following disclosure provides numerous different embodiments or examples for implementing various features of this disclosure. Specific examples of components and arrangements are described below to simplify this disclosure. Of course, these are merely examples and are not intended to limit the scope of this disclosure. For example, in the following description, the first feature being formed "on" or "on" a second feature may include embodiments where the first and second features are formed in direct contact, or embodiments where an additional feature is formed between the first and second features such that the first and second features are not in direct contact. Furthermore, component numbers and / or letters may be repeated in various examples of this disclosure. Such repetition is for simplification and clarity of description of this disclosure, and is not intended to limit the relationship between various embodiments and / or configurations.

[0015] Furthermore, for ease of explanation, spatially relative terms such as "below," "under," "lower," "above," and "upper" may be used herein to describe the relationship between one component or feature shown in the figures and another component or feature. In addition to the orientations depicted in the figures, these spatially relative terms also cover different orientations of the device during use or operation. The device may have other orientations (rotated 90 degrees or in other orientations), and the spatially relative descriptions used therein can be interpreted in the same manner.

[0016] This bonding tool includes opposing bonding jigs (e.g., a top bonding jig and a bottom bonding jig) that hold the two semiconductor substrates together during a bonding operation that joins two semiconductor substrates together. In some cases, and when the two semiconductor substrates are bonded, the top semiconductor substrate may be deformed by a mechanism (e.g., a striker pin), while the bottom semiconductor substrate may be deformed by an inflatable bag (e.g., an air bag or a liquid bag) or by air pressure in the bonding tool. The deformed semiconductor substrates are then pressed together near their centers. The attraction of the deformed semiconductor substrates propagates outward from the center to the edges. This outward propagation is called bonding wave propagation.

[0017] Overlay performance (e.g., alignment between the top and bottom semiconductor substrates) is a performance parameter that can significantly impact the yield of semiconductor devices derived from both the top and bottom semiconductor substrates. The difference between the center of the top and bottom semiconductor substrates after bonding (and / or the difference between the edges of the top and bottom semiconductor substrates after bonding) is referred to as misalignment, scaling, or run-out. Even small amounts of misalignment can lead to a significant reduction in semiconductor device yield, especially as semiconductor device density increases. In some cases, using impact pins to deform the top semiconductor substrate can cause abrupt deformation, generating bonding waves that induce misalignment and consequently reduce semiconductor device yield.

[0018] Some embodiments described herein provide a bonding tool with a top bonding clamp including an expandable force-applying structure (e.g., a closed air bag). When pressurized, the expandable force-applying structure has a curved surface projecting from the underside of the top bonding clamp to deform a top semiconductor substrate during bonding operations. The expansion rate and / or pressure within the expandable force-applying structure can be controlled to distribute the force more uniformly in the bonding area of ​​the semiconductor substrate relative to another bonding tool having another top bonding clamp including an impact pin.

[0019] In this way, the bonding tool can generate a more controlled bonding wave to improve overlay performance. Improved overlay performance can improve product yield (e.g., the yield of 3DIC devices (e.g., CSI BSI devices)) to reduce the amount of resources required to manufacture large quantities of products (e.g., semiconductor processing tools, raw materials, human and / or computing resources).

[0020] Figure 1This is a diagram of an exemplary bonding tool 100 described herein. The bonding tool 100 may include examples of hybrid bonding tools, eutectic bonding tools, direct bonding tools, fusion bonding tools, and / or other types of bonding tools configured to bond two or more semiconductor substrates together. Figure 1 A side view of the engagement tool 100 is shown.

[0021] like Figure 1 As shown, the engagement tool 100 may include various components, such as one or more processing chambers 102, one or more processing chambers 104, one or more loading ports 106, a transport vehicle 108, and a controller 110, etc.

[0022] Loading port 106 can be configured to receive and support a front-opening unified pod (FOUP) and / or another type of semiconductor substrate transport carrier. Transport vehicle 108 can obtain semiconductor substrates from and / or supply semiconductor substrates to the substrate transport carrier on loading port 106.

[0023] Transport vehicle 108 may include a robotic arm, substrate transport tool, and / or other type of tool configured to transfer semiconductor substrates to and from loading port 106 and to transfer semiconductor substrates between processing chamber 102 and processing chamber 104. Transport vehicle 108, as well as processing chambers 102 and 104, may be located in an environmentally controlled environment within bonding tool 100 to reduce the likelihood of semiconductor substrates in bonding tool 100 being exposed to moisture, particles, and / or other types of contaminants.

[0024] Processing chambers 102 may each include a processing chamber in which a semiconductor substrate is prepared for bonding, inspection, and / or further processing. For example, processing chamber 102 may be configured to pre-clean the semiconductor substrate prior to bonding. As another example, processing chamber 102 may be configured to deposit one or more bonding layers on the semiconductor substrate prior to bonding. As yet another example, processing chamber 102 may be configured to measure the semiconductor substrate to align it with another semiconductor substrate in processing chamber 104.

[0025] Processing chamber 104 may include the processing chamber of bonding tool 100. Semiconductor substrates may be bonded together in processing chamber 104 using hybrid bonding technology, eutectic bonding technology, direct bonding technology, fusion bonding technology and / or another bonding technology.

[0026] like Figure 1 As shown, the processing chamber 104 includes a reference section line AA. (As shown in the diagram...) Figure 2A, Figure 2B As described in more detail elsewhere in this document with reference to section line AA, the processing chamber 104 may include an assembly of bonding jigs to support the semiconductor substrate during bonding.

[0027] The bonding tool 100 includes a controller 110. The controller 110 may correspond to a processor, workstation, desktop computer, integrated computing system, and / or another type of computing device. The controller 110 is configured to communicate with and / or control the operation of various components and / or subsystems of the bonding tool 100, including processing chamber 102, processing chamber 104, loading port 106, and / or transport vehicle 108, etc. In some embodiments, the controller 110 signals the bonding tool 100 and / or its components to perform a bonding operation, thereby bonding two or more semiconductor substrates together. In some embodiments, as described herein, the controller 110 signals the bonding tool 100 and / or its components to monitor one or more states of the bonding operation (e.g., bonding wave propagation between two or more semiconductor substrates).

[0028] Such as combination Figures 2A to 6 In more detail, the bonding tool 100 can perform a series of operations. The series of operations includes receiving a first semiconductor substrate on a first bonding jig, the first bonding jig including a first expandable force-applying structure located in a recess of a first suction cup assembly, wherein the first bonding jig includes a first vacuum port structure passing through the first expandable force-applying structure and the first suction cup assembly. The series of operations includes activating a first vacuum supply system to draw the first semiconductor substrate onto the surface of the first expandable force-applying structure. The series of operations includes receiving a second semiconductor substrate on a second bonding jig, the second bonding jig including a second expandable force-applying structure located in a recess of a second suction cup assembly, wherein the second bonding jig includes a second vacuum port structure passing through the second expandable force-applying structure and the second suction cup assembly. The series of operations includes activating a second vacuum supply system to draw the second semiconductor substrate onto the surface of the second expandable force-applying structure. The series of operations includes activating a first gas supply system to expand the first expandable force-applying structure. The series of operations includes activating a second gas supply system to expand the second expandable force-applying structure. The series of operations includes performing a bonding operation to connect the first semiconductor substrate and the second semiconductor substrate after expanding the first expandable force-applying structure and the second expandable force-applying structure.

[0029] Alternatively, the series of operations includes receiving a semiconductor substrate on a bonding jig, the bonding jig including an expandable force-applying structure located in a recess of a suction cup assembly. The series of operations includes activating a vacuum supply system to draw a vacuum through multiple vacuum port structures passing through the expandable force-applying structure, thereby drawing the semiconductor substrate onto the surface of the expandable force-applying structure. The series of operations includes activating a gas supply system to provide pressurized gas through gas inlet port structures, the pressurized gas entering the expandable force-applying structure to cause it to expand. The series of operations includes performing a bonding operation to connect the semiconductor substrate to another semiconductor substrate after the expandable force-applying structure has expanded.

[0030] As indicated above, Figure 1 For illustrative purposes only. Other examples may differ from those provided. Figure 1 The examples described.

[0031] Figure 2A and Figure 2B This is a figure of an exemplary embodiment 200 of the processing chamber 104 of the bonding tool 100 described herein. The processing chamber 104 may include examples of a hybrid processing chamber, a eutectic processing chamber, a direct processing chamber, and / or another type of processing chamber in which two or more semiconductor substrates can be bonded together.

[0032] Figure 2A A cross-sectional view along section line AA is shown of the processing chamber 104, including the engagement clamp 202. (As shown in the image) Figures 3A to 3D As described in more detail elsewhere herein, the bonding jig 202 is configured to receive, support, and deform the bonding region of the semiconductor substrate 204 during the bonding operation. The semiconductor substrate 204 may include a semiconductor wafer (e.g., a silicon wafer, a silicon-on-insulator (SOI) wafer) or another type of substrate on which semiconductor devices can be formed and fabricated. The semiconductor substrate 204 may be bonded to another semiconductor substrate in the processing chamber 104 to form stacked semiconductor devices.

[0033] The engagement clamp 202 includes a suction cup assembly 206. In some embodiments, and as shown in... Figure 2A As shown, the suction cup assembly 206 corresponds to at least one vacuum pad structure 208 (or as shown) connected to the vacuum supply system 210. Figures 3A-3DVacuum chucks (208a / 208b) are used. Vacuum supply system 210 can provide vacuum through vacuum pad structure 208 to generate vacuum force 212 to hold the peripheral region of semiconductor substrate 204 to the surface of chuck assembly 206. Alternatively, chuck assembly 206 may correspond to an electrostatic chuck (ESC) and / or another type of chuck.

[0034] The engagement clamp 202 also includes an expandable force-applying structure 214 located in a recess within the suction cup assembly 206. The wall of the expandable force-applying structure 214 (a closed air bag, air bladder, thin-walled container, or membrane, etc.) may comprise materials such as titanium nitride or yttria-stabilized zirconia at 3 moles. Alternatively, the wall of the expandable force-applying structure 214 may comprise materials with an elastic modulus (e.g., Young's modulus) ranging from approximately 100 gigapascals (GPa) to approximately 270 GPa. Alternatively, the wall of the expandable force-applying structure 214 may comprise a fracture toughness of approximately 1.8 megapascals per meter squared (MPa / m²). 2 Up to approximately 7.0 MPa / m 2 Materials within the range specified. However, other materials, ranges and / or values ​​of elastic modulus and fracture toughness are also within the scope of this disclosure.

[0035] like Figure 2A As shown, the engagement clamp 202 also includes a gas inlet port structure 216 (or as shown in the diagram). Figures 3A-3D (216a / 216b) In this embodiment, the gas inlet port structure 216 passes through the suction cup assembly 206 and enters the expandable force-applying structure 214. Furthermore, the gas inlet port structure 216 is connected to the gas supply system 218. In some embodiments, the gas inlet port structure 216 includes a sleeve assembly 220 (e.g., an adapter), the sleeve assembly 220 (or such as...) Figures 3A-3D 220a / 220b) passes through suction cup assembly 206 to connect gas inlet port structure 216 to gas supply system 218.

[0036] In some embodiments, the gas inlet port structure 216 is configured to supply pressurized gas 222 (e.g., pressurized nitrogen (N2)) from the gas supply system 218 to the expandable force-applying structure 214. The pressurized gas 222 can cause the expandable force-applying structure 214 to expand to form a convex bend 224 along the outer surface of the expandable force-applying structure 214. The convex bend 224 can protrude outside the cavity (e.g., protrude beyond the surface of the chuck assembly 206) and provide a force that deforms the central region (e.g., the bonding region) of the semiconductor substrate 204 during a bonding operation that connects the semiconductor substrate 204 to another semiconductor substrate.

[0037] In some embodiments, the pressure of the pressurized gas 222 ranges from approximately 50 mbar to approximately 1000 mbar. A pressure greater than or equal to approximately 50 mbar (in combination with the area of ​​the expandable force-applying structure 214) provides a force sufficient to deform the semiconductor substrate 204 and / or initiate the propagation of the bonding wave. A pressure less than approximately 50 mbar does not provide a force sufficient to deform the semiconductor substrate 204 and / or initiate the propagation of the bonding wave. A pressure equal to or less than approximately 1000 mbar provides a force sufficient to deform the semiconductor substrate 204 and initiate the propagation of the bonding wave without damaging the semiconductor substrate 204. A pressure greater than approximately 1000 mbar may result in an excessive force that bends the semiconductor substrate 204 to the extent that it damages the semiconductor substrate 204. However, other values ​​and ranges of the pressure of the pressurized gas 222 are also within the scope of this disclosure.

[0038] like Figure 2A As shown, at least one vacuum port structure 226 passes through the suction cup assembly 206 and the expandable force-applying structure 214. Furthermore, a vacuum supply system 228 (e.g., a vacuum pump) is connected to the vacuum port structure 226. The vacuum port structure 226 may further include a sleeve assembly 230 (e.g., an adapter), the sleeve assembly 230 (or as...) Figures 3A-3D 230a / 230b) passes through suction cup assembly 206 to connect vacuum port structure 226 to vacuum supply system 228.

[0039] Vacuum port structure 226 may include a tube, gasket, or other type of sealing channel through which a vacuum supply system 228 draws a vacuum to generate a vacuum force 232 near the outer surface of the expandable force-applying structure 214. In some embodiments, vacuum port structure 226 includes a material with a degree of elasticity that allows it to expand and / or contract in the vertical direction. In some embodiments, vacuum port structure 226 includes structures (e.g., folds, ribs, and / or pleats) that allow it to expand and / or contract in the vertical direction.

[0040] In some embodiments, vacuum force 232 holds the surface of semiconductor substrate 204 to expandable force-applying structure 214 during deformation of the semiconductor substrate. Holding the surface of semiconductor substrate 204 to expandable force-applying structure 214 reduces displacement and / or slippage of semiconductor substrate 204, thereby reducing misalignment during bonding operations and improving the overlap performance of bonding tools (e.g., improving the bonding performance of bonding tool 100) using bonding jig 202.

[0041] like Figure 2A As further shown, a sensor system 234 may be included in the processing chamber 104. The sensor system 234 is configured to generate sensor data in two or more directions based on the propagation of a bonding wave that bonds the semiconductor substrate 204 to another semiconductor substrate. The bonding operation may include a hybrid bonding operation, a eutectic bonding operation, a direct bonding operation, a fusion bonding operation, and / or another type of bonding operation. The sensor system 234 may be configured to monitor the bonding region for deformation of the semiconductor substrate 204 and / or the propagation of the bonding wave during the bonding operation.

[0042] Sensor system 234 may include a laser micrometer, optical micrometer, or another type of sensor configured to generate sensor data based on whether optical signal 236 (e.g., electromagnetic wave, light wave) is allowed to propagate from one side of semiconductor substrate 204 to the opposite side of semiconductor substrate 204. Sensor system 234 may further include an optical transmitter and / or optical receiver for transmitting and / or receiving optical signal 236.

[0043] In some embodiments, the controller 110 is configured to communicate with the sensor system 234, the vacuum supply system 210, the gas supply system 218, and / or the vacuum supply system 228 to control and / or tune parameters related to the engagement operation. In some embodiments, the control and tuning of parameters related to the engagement operation can be performed in real time and based on feedback received from the sensor system 234. Alternatively, in some embodiments, controlling and / or tuning parameters related to the engagement operation includes: activating the gas supply system 218, adjusting the pressure setting within the control expandable force-applying structure 214 of the gas supply system 218, activating the vacuum supply system 228, adjusting the setting of the expansion rate of the control expandable force-applying structure 214 of the gas supply system 218, or adjusting the setting of the vacuum supply system 228 to achieve a specific pattern and / or subset of the array of vacuum port structures (e.g., a specific pattern and / or subset of the array of vacuum port structures including vacuum port structure 226).

[0044] In some embodiments, controller 110 uses a machine learning model to determine the adjusted settings. The machine learning model may include one or more of neural network models, random forest models, clustering models, or regression models, and / or may be associated with said one or more. In some embodiments, controller 110 uses the machine learning model to adjust the settings by: providing candidate bonding wave parameters, the material contained in semiconductor substrate 204, and / or the thickness of semiconductor substrate 204 as input to the machine learning model, and using the machine learning model to determine the likelihood, probability, or confidence that a specific outcome (e.g., overlap performance meeting a threshold value) will be achieved in a subsequent bonding operation by using the candidate parameters. In some embodiments, controller 110 provides overlap performance as input to the machine learning model, and controller 110 uses the machine learning model to determine or identify specific combinations of adjusted settings that are likely to achieve overlap performance.

[0045] Controller 110 (or another system) can train, update, and / or improve a machine learning model to enhance the accuracy of results and / or parameters determined using the machine learning model. Controller 110 can train, update, and / or improve the machine learning model based on feedback and / or results from subsequent join operations and from historical join operations or related join operations performed by join tool 100 (e.g., from hundreds, thousands, or more historical join operations or related join operations).

[0046] Figure 2B A bottom view of the engagement clamp 202 is shown. Figure 2B As shown and in some embodiments, the engagement clamp 202 (e.g., suction cup assembly 206) includes a plurality (e.g., eight) of vacuum pad structures 208. Furthermore, as shown and in some embodiments, the engagement clamp 202 (e.g., expandable force-applying structure 214) includes a plurality (e.g., eight) of vacuum port structures 226 arranged in a radial pattern 238.

[0047] Figure 2B The exemplary dimensions shown include width D1 (e.g., the diameter of the expandable force-applying structure 214), width D2 (e.g., the diameter of the radial pattern 238), and width D3 (e.g., the diameter of the vacuum port structure 226). In some embodiments and as examples, width D1 includes a range of approximately 75 mm to approximately 100 mm. Alternatively, width D2 includes a range of approximately 30 mm to approximately 50 mm. Alternatively, width D3 includes a range of approximately 2 mm to approximately 3 mm.

[0048] The widths D1 to D3 and the number of vacuum port structures 226 can be correlated. In this way, combinations of widths D1 to D3 and / or the number of vacuum port structures 226 can be selected based on factors including the diameter of the expandable force-applying structure 214, the available vacuum pressure from the vacuum supply system (e.g., vacuum supply system 228), the available pressure from the gas supply system (e.g., gas supply system 218), the width, thickness, and / or material of the semiconductor substrate (e.g., semiconductor substrate 204) held by the bonding jig 202, the type of chuck assembly 206 (e.g., an electrostatic chuck (ESC) type chuck assembly, a vacuum type chuck assembly), and / or the desired characteristics of the bonding wave, etc. However, other values ​​and ranges of the number of widths D1 to D3 and / or the number of vacuum port structures 226 are also within the scope of this disclosure.

[0049] As indicated above, Figure 2A and Figure 2B For illustrative purposes only. Other examples may differ from those provided. Figure 2A and Figure 2B The examples described.

[0050] In some implementations and such as in combination Figure 1 , Figure 2A and Figure 2B As described elsewhere herein, the bonding tool (e.g., bonding tool 100) includes a processing chamber (e.g., processing chamber 104). The bonding tool includes a bonding jig (e.g., bonding jig 202) located within the processing chamber, the bonding jig being configured to hold a semiconductor substrate (e.g., semiconductor substrate 204). The bonding jig includes a suction cup assembly (e.g., suction cup assembly 206), an expandable force-applying structure (e.g., expandable force-applying structure 214) located within a recess in the suction cup assembly, and a vacuum port structure (e.g., vacuum port structure 226) passing through the suction cup assembly and through the expandable force-applying structure, the vacuum port structure being configured to provide a vacuum force (e.g., vacuum force 232) to hold a bonding region of the semiconductor substrate on the expandable force-applying structure. The bonding fixture includes a gas inlet port structure (e.g., gas inlet port structure 216) that passes through the suction cup assembly and enters the expandable force-applying structure. The gas inlet port structure is configured to provide pressurized gas (e.g., pressurized gas 222) to expand the expandable force-applying structure, thereby forming a convex bend (e.g., convex bend 224) protruding out of the groove along the outer surface of the expandable force-applying structure and providing a force that deforms the bonding region of the semiconductor substrate during bonding operations that connect a semiconductor substrate to another semiconductor substrate.

[0051] In this way, the bonding tool can generate a more controlled bonding wave to improve overlay performance. Improved overlay performance can improve product yield (e.g., the yield of 3DIC devices (e.g., CSI BSI devices)) to reduce the amount of resources required to manufacture large quantities of products (e.g., semiconductor processing tools, raw materials, human and / or computing resources).

[0052] Figures 3A to 3D This is a figure illustrating an exemplary embodiment 300 of the joining tool described herein. The joining tool may correspond to a tool including a joining... Figure 2A and Figure 2B The description of one or more features Figure 1 The joining tool 100 shown.

[0053] like Figure 3A As shown, embodiment 300 includes a processing chamber 104 (e.g., the processing chamber 104 of the bonding tool 100). The processing chamber 104 includes a bonding jig 202a (e.g., an upper bonding jig) and a bonding jig 202b (a lower bonding jig inverted relative to the upper bonding jig). As part of a bonding operation in the processing chamber 104, the bonding jig 202a receives a semiconductor substrate 204a, while the bonding jig 202b receives a semiconductor substrate 204b.

[0054] exist Figure 3A In this configuration, controller 110 activates one or more of vacuum supply systems 210a and / or 210b to secure semiconductor substrate 204a and / or 204b to a corresponding chuck assembly (e.g., chuck assembly 206a and / or chuck assembly 206b). Alternatively, controller 110 activates one or more of vacuum supply systems 228a and / or 228b to secure semiconductor substrate 204a and / or 204b to the surface of a corresponding expandable force-applying structure (e.g., expandable force-applying structure 214a and / or expandable force-applying structure 214b). In some embodiments, controller 110 adjusts the settings of one or more of vacuum supply systems 210a, 210b, 228a, and / or 228b to control the vacuum pressure.

[0055] like Figure 3BAs shown and as part of embodiment 300, controller 110 activates one or more of gas supply systems 218a and / or gas supply systems 218b to supply pressurized gas (e.g., pressurized gas 222a and / or pressurized gas 222b) to the corresponding expandable force-applying structure (e.g., expandable force-applying structure 214a and / or expandable force-applying structure 214b). In some embodiments, controller 110 adjusts the settings of one or more of gas supply systems 218a and / or gas supply systems 218b to control the pressure of pressurized gas 222a and / or pressurized gas 222b. In some embodiments and as in combination Figure 2A The adjustment of settings is based on the output of a machine learning model.

[0056] like Figure 3C As shown and as part of embodiment 300, the expandable force-applying structure 214a deforms the bonding region of the semiconductor substrate 204a. In some embodiments and after expansion, the expandable force-applying structure 214a forms a convex bend 224a along its outer surface, the convex bend 224a protruding beyond the surface of the suction cup assembly 206a to provide a force that deforms the bonding region of the semiconductor substrate 204a.

[0057] As an example, the convex bend 224a may protrude beyond the surface of the chuck assembly by a distance D4 ranging from greater than 0 micrometers to up to approximately 100 micrometers. A distance less than or equal to approximately 100 micrometers may be sufficient to deform the bonding region of the semiconductor substrate 204a and / or initiate the propagation of bonding waves without damaging the semiconductor substrate 204a. A distance greater than approximately 100 micrometers may cause excessive deformation of the bonding region of the semiconductor substrate 204a that could damage the semiconductor substrate 204a. However, other values ​​and ranges of distance D4 are also included within the scope of this disclosure.

[0058] like Figure 3C As further shown and as part of embodiment 300, the expandable force-applying structure 214b deforms the bonding region of the semiconductor substrate 204b. In some embodiments, and after expansion, the expandable force-applying structure 214b forms a convex bend 224b along its outer surface, the convex bend 224b protruding beyond the surface of the suction cup assembly 206b to provide a force for deforming the bonding region of the semiconductor substrate 204b. Combined with the deformation of the semiconductor substrate 204a, the deformation of the semiconductor substrate 204b can initiate the propagation of a bonding wave across the semiconductor substrates 204a and 204b to connect the semiconductor substrates 204a and 204b.

[0059] like Figure 3DAs shown and as part of embodiment 300, controller 110 activates sensor system 234. In some embodiments, sensor system 234 uses optical signal 236 to monitor one or more parameters (e.g., displacement) that may be related to deformation of the central region of semiconductor substrate 204a and / or semiconductor substrate 204b. Alternatively, sensor system 234 may use optical signal 236 to monitor one or more parameters (e.g., amplitude and / or velocity of the bonding wave) that may be related to the propagation of the bonding wave.

[0060] Based on information received from sensor system 234, controller 110 can adjust the settings of one or more of vacuum supply systems 210a, 210b, 228a, and / or 228b in real time to control the vacuum pressure. Alternatively, and based on information received from sensor system 234, controller 110 can adjust the settings of one or more of gas supply systems 218a and / or 218b in real time to control the pressure of pressurized gas 222a and / or 222b. In some embodiments, controller 110 uses information received from sensor system 234 to adjust these settings in conjunction with a machine learning model.

[0061] Alternatively, and based on information received from sensor system 234, controller 110 may disable one of vacuum supply systems 210a, 210b, 228a, and / or 228b to release semiconductor substrates 204a and / or 204b. Alternatively, and based on information received from sensor system 234, controller 110 may disable one of gas supply systems 218a and / or 218b. In some embodiments, controller 110 uses information received from sensor system 234 in conjunction with a machine learning model to activate and / or disable such systems.

[0062] As indicated above, Figures 3A to 3D For illustrative purposes only. Other examples may differ from those provided. Figures 3A to 3D The examples described.

[0063] Figure 4 An exemplary embodiment 400 described herein is shown. Embodiment 400 includes engagement jigs 202a and 202b in a processing chamber 104. Figures 3A to 3D on the contrary, Figure 4The processing chamber 104 shown includes a single engagement jig (e.g., engagement jig 202a with an expandable force-applying structure 214a) used in conjunction with another engagement jig that does not have a force-applying structure. For example, Figure 4 The shown engagement clamp 202b includes a force-applying component 402, which may be an impact pin or another type of force-applying component. Use and engagement. Figures 3A to 3D Similar techniques can be described, in which bonding jigs 202a and 202b can be used to connect semiconductor substrates 204a and 204b.

[0064] As indicated above, Figure 4 For illustrative purposes only. Other examples may differ from those provided. Figure 4 The examples described.

[0065] Figure 5 This is a flowchart of an exemplary process 500 associated with bonding to a semiconductor substrate. In some embodiments, Figure 5 The one or more process blocks shown are performed by a joining tool (e.g., joining tool 100). In some embodiments, Figure 5 The process blocks shown are performed by another device or set of devices that are separated from or include the joining tool (e.g., controller 110, joining jig 202 including suction cup assembly 206 and expandable force application structure 214, gas supply system 218 and / or vacuum supply system 228).

[0066] like Figure 5 As shown, process 500 may include receiving a first semiconductor substrate on a first bonding jig, the first bonding jig including a first expandable force-applying structure (block 510) located in a recess of a first chuck assembly. For example, as described above, a bonding tool (e.g., bonding tool 100) may receive the first semiconductor substrate (e.g., semiconductor substrate 204a) on a first bonding jig (e.g., bonding jig 202a), the first bonding jig including a first expandable force-applying structure (e.g., expandable force-applying structure 214a) located in a recess of a first chuck assembly (e.g., chuck assembly 206a). In some embodiments, the first bonding jig includes a first vacuum port structure (e.g., vacuum port structure 226a) passing through the first expandable force-applying structure and the first chuck assembly.

[0067] like Figure 5As further shown, process 500 may include activating a first vacuum supply system to draw the first semiconductor substrate onto the surface of the first expandable force-applying structure (block 520). For example, as described above, a controller (e.g., controller 110) may activate the first vacuum supply system (e.g., vacuum supply system 228a) to draw the first semiconductor substrate onto the surface of the first expandable force-applying structure.

[0068] like Figure 5 As further shown, process 500 may include receiving a second semiconductor substrate on a second bonding jig, the second bonding jig including a second expandable force-applying structure (block 530) located in a recess of a second chuck assembly. For example, as described above, the bonding tool may receive a second semiconductor substrate (e.g., semiconductor substrate 204b) on a second bonding jig (e.g., bonding jig 202b), the second bonding jig including a second expandable force-applying structure (e.g., expandable force-applying structure 214b) located in a recess of a second chuck assembly (chuck assembly 206b). In some embodiments, the second bonding jig includes a second vacuum port structure (e.g., vacuum port structure 226b) passing through the second expandable force-applying structure and the second chuck assembly.

[0069] like Figure 5 As further shown, process 500 may include activating a second vacuum supply system to draw the second semiconductor substrate onto the surface of the second expandable force-applying structure (block 540). For example, as described above, the controller may activate the second vacuum supply system (e.g., vacuum supply system 228b) to draw the second semiconductor substrate onto the surface of the second expandable force-applying structure.

[0070] like Figure 5 As further shown, process 500 may include activating a first gas supply system to cause the first expandable force-applying structure to expand (block 550). For example, as described above, the controller may activate the first gas supply system (e.g., gas supply system 218a) to cause the first expandable force-applying structure to expand.

[0071] like Figure 5 As further shown, process 500 may include activating a second gas supply system to cause the second expandable force-applying structure to expand (block 560). For example, as described above, the controller may activate the second gas supply system (e.g., gas supply system 218b) to cause the second expandable force-applying structure to expand.

[0072] like Figure 5As further shown, process 500 may include performing a bonding operation to connect the first semiconductor substrate and the second semiconductor substrate after expanding the first expandable force-applying structure and the second expandable force-applying structure (block 570). For example, as described above, after expanding the first expandable force-applying structure and the second expandable force-applying structure, the bonding tool may perform a bonding operation to connect the first semiconductor substrate and the second semiconductor substrate.

[0073] Process 500 may include additional implementations, such as any single implementation or any combination of implementations described below and / or in conjunction with one or more other processes described elsewhere herein.

[0074] In a first embodiment, process 500 includes monitoring the bonding region between the first semiconductor substrate and the second semiconductor substrate during a bonding operation to determine one or more parameters related to the propagation of the bonding wave and adjusting a first setting of the first gas supply system based on the one or more parameters to control the pressure within the first expandable force-applying structure.

[0075] In a second embodiment, either alone or in conjunction with the first embodiment, process 500 includes monitoring the bonding region between the first semiconductor substrate and the second semiconductor substrate during a bonding operation to determine one or more parameters related to the propagation of the bonding wave and adjusting a first setting of the first gas supply system based on the one or more parameters to control the rate of expansion within the first expandable force-applying structure.

[0076] In the third embodiment, either alone or in combination with one or more of the first and second embodiments, process 500 includes monitoring the bonding region between the first and second semiconductor substrates during the bonding operation to determine one or more parameters related to the propagation of the bonding wave and disabling the first vacuum supply system during the bonding operation to release the first semiconductor substrate from the surface of the first expandable force-applying structure.

[0077] although Figure 5 An example block of process 500 is shown, but in some embodiments, compared to Figure 5 The blocks shown in the diagram, process 500 includes additional blocks, fewer blocks, different blocks, or blocks arranged in a different manner. Alternatively, two or more blocks of process 500 may be performed side by side.

[0078] Figure 6 This is a flowchart of an exemplary process 600 associated with bonding to a semiconductor substrate. In some embodiments, Figure 6 The one or more process blocks shown are performed by a joining tool (e.g., joining tool 100). In some embodiments, Figure 6 The one or more process blocks shown are performed by another device or set of devices that are separated from or include the joining tool (e.g., controller 110, joining jig 202 including suction cup assembly 206 and expandable force application structure 214, gas supply system 218 and / or vacuum supply system 228). Alternatively, or as another option, the following can be performed: Figure 6 The diagram shows one or more process blocks.

[0079] like Figure 6 As shown, process 600 may include receiving a semiconductor substrate on a bonding jig, the bonding jig including an expandable force-applying structure (block 610) located in a recess of a chuck assembly. For example, as described above, a bonding tool (e.g., bonding tool 100) may receive a semiconductor substrate (e.g., semiconductor substrate 204) on a bonding jig (e.g., bonding jig 202), the bonding jig including an expandable force-applying structure (e.g., expandable force-applying structure 214) located in a recess of a chuck assembly (e.g., chuck assembly 206).

[0080] like Figure 6 As further shown, process 600 may include activating a vacuum supply system to draw a vacuum through multiple vacuum port structures of the expandable force-applying structure, thereby drawing the semiconductor substrate onto the surface of the expandable force-applying structure (block 620). For example, as described above, a controller (e.g., controller 110) may activate a vacuum supply system (e.g., vacuum supply system 228) to draw a vacuum through multiple vacuum port structures (e.g., multiple vacuum port structures 226) of the expandable force-applying structure, thereby drawing the semiconductor substrate onto the surface of the expandable force-applying structure.

[0081] like Figure 6 As further shown, process 600 may include activating a gas supply system to provide pressurized gas through a gas inlet port structure, the pressurized gas entering an expandable force-applying structure to cause the expandable force-applying structure to expand (block 630). For example, as described above, the controller may activate a gas supply system (e.g., gas supply system 218) to provide pressurized gas (e.g., pressurized gas 222) through a gas inlet port structure (e.g., gas inlet port structure 216), the pressurized gas entering the expandable force-applying structure to cause the expandable force-applying structure to expand.

[0082] like Figure 6 As further shown, process 600 may include performing a bonding operation (block 640) to connect a semiconductor substrate to another semiconductor substrate after the expandable force-applying structure has expanded. For example, as described above, after the expandable force-applying structure has expanded, a bonding tool may perform a bonding operation to connect a semiconductor substrate to another semiconductor substrate.

[0083] Process 600 may include additional implementations, such as any single implementation or any combination of one or more other processes set forth below and / or in combination with those set forth elsewhere herein.

[0084] In a first embodiment, a gas supply system is activated to provide pressurized gas, which in turn causes the expandable force-applying structure to expand to form a convex bend (e.g., convex bend 224) along the outer surface of the expandable force-applying structure. The convex bend protrudes beyond the surface of the chuck assembly to provide a force that deforms the bonding region of the semiconductor substrate during the bonding operation.

[0085] In the second embodiment, either alone or in conjunction with the first embodiment, the distance by which the convex curved portion protrudes beyond the surface of the suction cup assembly (e.g., distance D4) ranges from greater than 0 micrometers to up to approximately 100 micrometers.

[0086] In the third embodiment, activating the gas supply system to provide pressurized gas to expand the expandable force-applying structure, either alone or in combination with one or more of the first and second embodiments, includes activating the gas supply system to provide pressurized nitrogen.

[0087] In the fourth embodiment, either alone or in combination with one or more of the first to third embodiments, process 600 includes adjusting the setting of the pressure of the pressurized gas, wherein the pressure of the pressurized gas is in the range of approximately 50 mbar to approximately 1000 mbar.

[0088] In the fifth embodiment, the setting of the pressure of the control pressurized gas is adjusted based on the output of a machine learning model, either alone or in combination with one or more of the first to fourth embodiments.

[0089] In the sixth embodiment, either alone or in combination with one or more of the first to fifth embodiments, process 600 includes using a sensor system (e.g., sensor system 234) to monitor deformation of the semiconductor substrate during the bonding operation and adjusting the setting of the pressure of the control pressurized gas based on information received from the sensor system.

[0090] In the seventh embodiment, either alone or in combination with one or more of the first to sixth embodiments, process 600 includes using a sensor system to monitor the deformation of the semiconductor substrate during the bonding operation and adjusting the settings of a vacuum supply system for controlling the vacuum force on the semiconductor substrate based on information received from the sensor system.

[0091] although Figure 6 An example block of process 600 is shown, but in some embodiments, compared to Figure 6The blocks shown in the diagram, process 600 includes additional blocks, fewer blocks, different blocks, or blocks arranged in a different manner. Alternatively, two or more blocks of process 600 may be performed side by side.

[0092] Some embodiments described herein provide a bonding tool with a top bonding clamp including an expandable force-applying structure (e.g., an air bag). When pressurized, the expandable force-applying structure has a curved surface projecting from the underside of the top bonding clamp to deform a top semiconductor substrate during bonding operations. The rate and / or pressure of expansion within the expandable force-applying structure can be controlled to distribute force more uniformly in the bonding area of ​​the semiconductor substrate relative to another bonding tool having another top bonding clamp including an impact pin.

[0093] In this way, the bonding tool can generate a more controlled bonding wave to improve overlay performance. Improved overlay performance can improve product yield (e.g., the yield of 3DIC devices (e.g., CSI BSI devices)) to reduce the amount of resources required to manufacture large quantities of products (e.g., semiconductor processing tools, raw materials, human and / or computing resources).

[0094] As described in more detail above, some embodiments described herein provide a method. The method includes receiving a first semiconductor substrate on a first bonding jig, the first bonding jig including a first expandable force-applying structure located in a recess of a first suction cup assembly, wherein the first bonding jig includes a first vacuum port structure passing through the first expandable force-applying structure and the first suction cup assembly. The method includes activating a first vacuum supply system to suction the first semiconductor substrate onto the surface of the first expandable force-applying structure. The method includes receiving a second semiconductor substrate on a second bonding jig, the second bonding jig including a second expandable force-applying structure located in a recess of a second suction cup assembly, wherein the second bonding jig includes a second vacuum port structure passing through the second expandable force-applying structure and the second suction cup assembly. The method includes activating a second vacuum supply system to suction the second semiconductor substrate onto the surface of the second expandable force-applying structure. The method includes activating a first gas supply system to expand the first expandable force-applying structure. The method includes activating a second gas supply system to expand the second expandable force-applying structure. The method includes performing a bonding operation to connect the first semiconductor substrate and the second semiconductor substrate after expanding the first expandable force-applying structure and the second expandable force-applying structure.

[0095] In some embodiments, the method further includes monitoring the junction region between the first semiconductor substrate and the second semiconductor substrate during the bonding operation to determine one or more parameters related to the propagation of the bonding wave, and adjusting a first setting of the first gas supply system based on the one or more parameters to control the pressure within the first expandable force-applying structure. In some embodiments, the method further includes monitoring the junction region between the first semiconductor substrate and the second semiconductor substrate during the bonding operation to determine one or more parameters related to the propagation of the bonding wave, and adjusting a first setting of the first gas supply system based on the one or more parameters to control the rate of expansion within the first expandable force-applying structure. In some embodiments, the method further includes monitoring the junction region between the first semiconductor substrate and the second semiconductor substrate during the bonding operation to determine one or more parameters related to the propagation of the bonding wave, and disabling the first vacuum supply system during the bonding operation to release the first semiconductor substrate from the surface of the first expandable force-applying structure.

[0096] As described in more detail above, some embodiments described herein provide a method. The method includes receiving a semiconductor substrate on a bonding jig, the bonding jig including an expandable force-applying structure located in a recess of a suction cup assembly. The method includes activating a vacuum supply system to draw a vacuum through a plurality of vacuum port structures passing through the expandable force-applying structure, thereby drawing the semiconductor substrate onto the surface of the expandable force-applying structure. The method includes activating a gas supply system to provide pressurized gas through gas inlet port structures, the pressurized gas entering the expandable force-applying structure to cause the expandable force-applying structure to expand. The method includes performing a bonding operation to connect the semiconductor substrate to another semiconductor substrate after expanding the expandable force-applying structure.

[0097] In some embodiments, activating the gas supply system to provide pressurized gas, thereby causing the expandable force-applying structure to expand, forms a convex bend along the outer surface of the expandable force-applying structure, the convex bend protruding beyond the surface of the chuck assembly to provide a force that deforms the bonding region of the semiconductor substrate during the bonding operation. In some embodiments, the distance by which the convex bend protrudes beyond the surface of the chuck assembly includes a range greater than 0 micrometers and up to approximately 100 micrometers. In some embodiments, activating the gas supply system to provide pressurized gas, thereby causing the expandable force-applying structure to expand, includes activating the gas supply system to provide pressurized nitrogen. In some embodiments, the method further includes adjusting a setting for controlling the pressure of the pressurized gas, wherein the pressure of the pressurized gas includes a range of approximately 50 mbar to approximately 1000 mbar. In some embodiments, the adjustment of the setting for controlling the pressure of the pressurized gas is based on the output of a machine learning model. In some embodiments, the method further includes using a sensor system to monitor the deformation of the semiconductor substrate during the bonding operation; and adjusting the setting for controlling the pressure of the pressurized gas based on information received from the sensor system. In some embodiments, the method further includes using a sensor system to monitor the deformation of the semiconductor substrate during the bonding operation; and adjusting the setting of the vacuum supply system for controlling the vacuum force on the semiconductor substrate based on information received from the sensor system.

[0098] As described in more detail above, some embodiments described herein provide a bonding tool. The bonding tool includes a processing chamber. The bonding tool includes a bonding jig located within the processing chamber and configured to hold a semiconductor substrate. The bonding jig includes a suction cup assembly; an expandable force-applying structure located within a recess in the suction cup assembly; and a vacuum port structure extending through the suction cup assembly and through the expandable force-applying structure, the vacuum port structure being configured to provide a vacuum force to hold a bonding region of the semiconductor substrate on the expandable force-applying structure. The bonding jig includes a gas inlet port structure extending through the suction cup assembly and into the expandable force-applying structure, the gas inlet port structure being configured to provide pressurized gas to expand the expandable force-applying structure, thereby forming a convex bend protruding out of the recess along the outer surface of the expandable force-applying structure, and providing a force to deform the bonding region of the semiconductor substrate during a bonding operation that connects the semiconductor substrate to another semiconductor substrate.

[0099] In some embodiments, the vacuum port structure includes a sleeve assembly that passes through the suction cup assembly and enters the expandable force-applying structure. In some embodiments, the expandable force-applying structure corresponds to a closed gas bag containing titanium nitride material. In some embodiments, the expandable force-applying structure corresponds to a closed gas bag containing 3 moles of yttrium oxide-stabilized zirconia material. In some embodiments, the vacuum port structure is one of a plurality of vacuum port structures that pass through the suction cup assembly and through the expandable force-applying structure. In some embodiments, the plurality of vacuum port structures are arranged in a radial pattern. In some embodiments, the joining tool further includes a vacuum supply system, a gas supply system, and a controller, wherein the vacuum supply system is connected to the vacuum port structure and configured to draw a vacuum, the vacuum supply system providing the vacuum force through the vacuum port structure, the gas supply system is connected to the gas inlet port structure and configured to provide the pressurized gas through the gas inlet port structure, and the controller is configured to adjust a first setting to control the pressure of the vacuum and a second setting to control the pressure of the pressurized gas. In some embodiments, the bonding tool further includes a sensor system configured to monitor the propagation of a bonding wave during the bonding operation, wherein the controller is further configured to adjust the first setting or the second setting based on the propagation of the bonding wave.

[0100] The term "satisfies the threshold value" as used in this article can refer to values ​​greater than the threshold value, values ​​greater than or equal to the threshold value, values ​​less than the threshold value, values ​​less than or equal to the threshold value, values ​​equal to the threshold value, values ​​not equal to the threshold value, etc., depending on the context.

[0101] The term “and / or” as used herein is intended to encompass each individual item among the multiple items, as well as any and all combinations of the multiple items, when used in conjunction with multiple items. For example, “A and / or B” encompasses “A and B”, “A and not B”, and “B and not A”.

[0102] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the embodiments of this utility model, and are not intended to limit it. Although the embodiments of this utility model have been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.

Claims

1. A bonding tool characterized by, Comprising: a processing chamber; and a bonding clamp positioned in the processing chamber and configured to hold a semiconductor substrate and comprising: a chuck assembly; an inflatable force structure positioned within a recess of the chuck assembly; a vacuum port structure passing through the chuck assembly and through the inflatable force structure and configured to provide a vacuum force holding a bonding region of the semiconductor substrate on the inflatable force structure; and a gas inlet port structure passing through the chuck assembly and into the inflatable force structure and configured to provide pressurized gas to inflate the inflatable force structure to form a convex curvature along an outer surface of the inflatable force structure protruding outside the recess and to provide a force deforming the bonding region of the semiconductor substrate during a bonding operation joining the semiconductor substrate to another semiconductor substrate.

2. The bonding tool according to claim 1, wherein wherein the vacuum port structure comprises: a sleeve assembly passing through the chuck assembly and into the inflatable force structure.

3. The bonding tool according to claim 1, wherein wherein the inflatable force structure comprises a closed gas pocket.

4. The bonding tool according to claim 1, wherein wherein the vacuum port structure is one of a plurality of vacuum port structures passing through the chuck assembly and through the inflatable force structure.

5. The bonding tool according to claim 4, wherein wherein the plurality of vacuum port structures are arranged in a radial pattern.

6. The bonding tool according to claim 1, wherein Further comprising: a vacuum supply system connected to the vacuum port structure and configured to draw a vacuum, the vacuum supply system providing the vacuum force through the vacuum port structure; a gas supply system connected to the gas inlet port structure and configured to provide the pressurized gas through the gas inlet port structure; and a controller configured to: adjust a first setting to control a pressure of the vacuum, and adjust a second setting to control a pressure of the pressurized gas. Further comprising:

7. The bonding tool according to claim 6, wherein a sensor system configured to monitor a bonding wave propagation during the bonding operation, and wherein the controller is further configured to adjust the first setting or the second setting based on the bonding wave propagation. wherein the chuck assembly corresponds to a vacuum chuck comprising at least one vacuum pad structure connected to the vacuum supply system.

8. The bonding tool according to claim 6, wherein wherein the vacuum port structure comprises:

9. The bonding tool according to claim 6, wherein a sleeve assembly passing through the chuck assembly to connect the vacuum port structure to the vacuum supply system. wherein the pressure of the pressurized gas is in a range of 50 mbar to 1000 mbar.

10. The bonding tool according to Claim 1, wherein ​

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