Sintering tool for high-power semiconductor laser bar

Abstract

The utility model discloses a sintering tool for a high-power semiconductor laser bar, which comprises heat sink sheets which are symmetrically arranged up and down, metal soldering lugs which are symmetrically arranged up and down and are positioned on the inner sides of the heat sink sheets, and the high-power semiconductor laser bar which is arranged between the two metal soldering lugs, and metal sheets are arranged on the two sides of the heat sink sheets. A metal soldering lug is placed between a bar and a heat sink to form a small bar unit of the high-power semiconductor laser, a metal sheet is attached to the side face of the small bar unit, then high-temperature sintering is carried out, the metal sheet on the side face is taken down in the sintering process, and the redundant metal soldering lug is attached to the metal sheet due to the fact that the metal soldering lug is flowable in the high-temperature sintering process. The method comprises the following steps: taking down the metal sheet, continuously sintering to obtain the sintered bar small unit of the high-power semiconductor laser, and removing the redundant metal soldering lug through the metal sheet, thereby ensuring that no cavity exists in sintering, avoiding the problem of poor appearance caused by overflow of the soldering flux, and improving the product quality.

Description

Technical Field

[0001] This utility model relates to the field of optoelectronic technology, specifically to a sintering fixture for a high-power semiconductor laser bar. Background Technology

[0002] High-power semiconductor lasers are devices that generate laser light using semiconductor materials as the working medium. They are characterized by high power, high brightness, high reliability, and long lifespan. High-power semiconductor lasers are commonly used in military, medical, industrial processing, and communications fields, playing a crucial role in these areas. With technological advancements, the application of high-power semiconductor lasers in fiber lasers and solid-state laser pump sources is becoming increasingly widespread. Their high efficiency and long lifespan make their application prospects in industrial processing and scientific research very broad. In the future, with further technological development, high-power semiconductor lasers will play an important role in even more fields. High-power semiconductor laser bars are devices manufactured using advanced semiconductor technology, featuring high power, high stability, and long lifespan, and are widely used in various industrial and scientific research fields.

[0003] High-power semiconductor laser bars typically employ brazing technology to provide stable laser output. For example, an 808nm wavelength semiconductor laser bar, using HCS-mount brazing packaging, can provide 250W of laser power output, suitable for industrial-grade laser applications. Furthermore, an 808nm quasi-continuous wave laser diode array, with a 3% duty cycle, controls the output wavelength within the range of 808nm ± 1nm, has a full width at half maximum (FWHM) of less than 3.5nm, and a peak power exceeding 11kW, making it suitable for various applications. High-power semiconductor laser bars typically utilize InGaAs or AlGaAs epitaxial materials, employing tapered structures to improve photoelectric conversion efficiency and output power. With the continuous advancement of laser technology, high-power semiconductor laser bars are increasingly widely used in industrial, scientific research, and medical fields. Due to their high power, high stability, and long lifespan, high-power semiconductor laser bars demonstrate broad application prospects in multiple fields.

[0004] Currently, to avoid problems caused by growth defects in laser bars, semiconductor laser packaging manufacturers can only screen them by continuously increasing the aging conditions. However, the aging screening itself also affects the semiconductor laser bars, increasing manufacturing costs and raising the risks of subsequent use. Existing high-power semiconductor laser bar screening methods require the bars to be fabricated into modules. During sintering, issues such as voids and solder overflow may occur, resulting in poor appearance and reducing the sintering yield of small units of high-power semiconductor laser bars. Utility Model Content

[0005] The purpose of this invention is to solve the above-mentioned problems and provide a sintering fixture for high-power semiconductor laser bars, which ensures that the sintering is free of voids and that there is no solder overflow causing poor appearance, thereby improving the sintering yield of small units of high-power semiconductor laser bars.

[0006] The technical solution adopted by this utility model to solve its technical problem is:

[0007] A sintering fixture for a high-power semiconductor laser bar includes a heat sink plate symmetrically arranged vertically, metal welding plates symmetrically arranged vertically on the inner side of the heat sink plate, and a high-power semiconductor laser bar disposed between the two metal welding plates. Metal plates are provided on both sides of the heat sink plate.

[0008] Furthermore, the metal sheet is attached to the side of the heat sink sheet with strong adhesive.

[0009] Furthermore, the metal solder sheet is an AuSn solder sheet.

[0010] Furthermore, the thickness of the metal solder sheet is one-fifth of the thickness of the high-power semiconductor laser bar.

[0011] Furthermore, the metal solder sheet contains 80% Au and 20% Sn.

[0012] Furthermore, the metal sheet is a Cu sheet.

[0013] Furthermore, the length of the metal sheet is greater than the length of the high-power semiconductor laser bar, the width of the metal sheet is greater than twice the thickness of the high-power semiconductor laser bar, and the thickness of the metal sheet is one-quarter of the thickness of the high-power semiconductor laser bar.

[0014] The beneficial effects of this utility model are:

[0015] 1. This utility model assembles a high-power semiconductor laser bar unit by placing metal solder sheets of the same size between the high-power semiconductor laser bar and the heat sink. Then, a metal sheet with a length greater than the bar length and a width greater than twice the bar thickness is attached to the side of the high-power semiconductor laser bar unit. High-temperature sintering is then performed. During sintering, the side metal sheet is removed. Taking advantage of the fluidity of the metal solder sheet during high-temperature sintering, excess solder adheres to a gold sheet and is removed along with the metal sheet. Sintering continues, resulting in a sintered high-power semiconductor laser bar unit. This method is simple to operate, removes excess solder using a metal sheet, ensures a void-free sintering process, and prevents solder overflow that could cause appearance defects. This improves the sintering yield of the high-power semiconductor laser bar unit and enhances product quality. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the present invention.

[0018] In the diagram: 1. Heat sink 2. Metal solder pad 3. High-power semiconductor laser bar 4. Detailed Implementation

[0019] To enable those skilled in the art to better understand the technical solutions of this utility model, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of this utility model.

[0020] like Figure 1 As shown, a sintering fixture for a high-power semiconductor laser bar includes a heat sink 1 symmetrically arranged vertically, metal welding plates 2 symmetrically arranged vertically on the inner side of the heat sink 1, and a high-power semiconductor laser bar 3 disposed between the two metal welding plates 2. Metal plates 4 are provided on both sides of the heat sink 1.

[0021] A high-power semiconductor laser bar unit is formed by placing metal solder sheets of the same size between the high-power semiconductor laser bar and the heat sink. Then, a metal sheet with a length greater than the bar length and a width greater than twice the bar thickness is attached to the side of the high-power semiconductor laser bar unit. High-temperature sintering is then performed. During sintering, the side metal sheet is removed. Taking advantage of the fluidity of the solder sheet during high-temperature sintering, excess solder adheres to a gold sheet and is removed along with the metal sheet. Sintering continues, resulting in a sintered high-power semiconductor laser bar unit. This method is simple to operate, removes excess solder using a metal sheet, ensures a void-free sintering process, and prevents solder overflow that could cause appearance defects. This improves the sintering yield of the high-power semiconductor laser bar unit and enhances product quality.

[0022] The metal sheet 4 is attached to the side of the heat sink sheet 1 with strong adhesive.

[0023] The metal solder sheet contains metals Au, Sn, and In, and the metal solder sheet 2 is an AuSn solder sheet.

[0024] The thickness of the metal welding sheet 2 is one-fifth the thickness of the high-power semiconductor laser bar 3.

[0025] The metal sheet 2 contains 80% Au and 20% Sn.

[0026] The metal sheets are made of Au and Cu, and the metal sheet 4 is a Cu sheet.

[0027] The length of the metal sheet 4 is greater than the length of the high-power semiconductor laser bar 3, the width of the metal sheet 4 is greater than twice the thickness of the high-power semiconductor laser bar 3, and the thickness of the metal sheet 4 is one-quarter of the thickness of the high-power semiconductor laser bar 3.

[0028] The working process is as follows: A high-power semiconductor laser bar prepared by conventional methods is placed between two heat sinks of the same size. A metal solder sheet of the same size is placed between each heat sink and the bar to form a small unit of the high-power semiconductor laser bar. Then, two metal sheets are attached to the sides of the small unit of the high-power semiconductor laser bar. The small unit of the high-power semiconductor laser bar is placed in a high-temperature sintering furnace for sintering. During the sintering process, the metal sheets on the sides are removed. Taking advantage of the fluidity of the metal solder sheets during high-temperature sintering, the excess metal solder sheets are attached to the gold sheet and removed together with the metal sheets. The high-temperature sintering temperature is 275-300℃ and the time is 2-3 minutes. The small unit of the high-power semiconductor laser bar is sintered again to solidify the metal solder sheets, resulting in the sintered small unit of the high-power semiconductor laser bar.

[0029] In the description of this utility model, it should be noted that the terms "left", "right", "up", "down", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0030] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

Claims

1. A sintering tool for high power semiconductor laser bars, characterized in that, The application relates to a heat sink piece (1) and metal solder pieces (2) symmetrically arranged on the inner side of the heat sink piece (1), and a high-power semiconductor laser bar (3) arranged between the two metal solder pieces (2).

2. The sintering tool for a high power semiconductor laser bar as set forth in claim 1, wherein, The metal piece (4) is attached to the side of the heat sink piece (1) by strong glue.

3. The sintering tool for high power semiconductor laser bars as claimed in claim 1, wherein, The metal solder piece (2) is an AuSn solder piece.

4. The sintering tool for high power semiconductor laser bars of claim 3, wherein, The thickness of the metal solder piece (2) is one fifth of the thickness of the high-power semiconductor laser bar (3).

5. The sintering tool for high power semiconductor laser bars as claimed in claim 3, wherein, The Au content in the metal solder piece (2) is 80%, and the Sn content is 20%.

6. The sintering tool for a high power semiconductor laser bar of claim 1, wherein, The metal piece (4) is a Cu piece.

7. The sintering tool for a high power semiconductor laser bar of claim 6, wherein, The length of the metal piece (4) is greater than the length of the high-power semiconductor laser bar (3), the width of the metal piece (4) is greater than twice the thickness of the high-power semiconductor laser bar (3), and the thickness of the metal piece (4) is one fourth of the thickness of the high-power semiconductor laser bar (3).

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