Developing device

Abstract

The utility model provides a developing device, which can improve the convenience of the developing device. The developing device includes: a first nozzle including a first ejection port extending in a lateral direction so as to continuously cover a width of a substrate; a moving mechanism that sets a first state in which the first nozzle is moved in a direction intersecting the extension direction of the first ejection port while the developer is being ejected from the first ejection port; a first liquid contact surface which forms an edge portion of the first ejection port and which is in contact with a liquid film of the developing liquid on the substrate in a first state; a second nozzle provided with a second discharge port formed such that the length in the extension direction of the first discharge port is shorter than the length of the first discharge port; a rotation mechanism that rotates the substrate so as to be in a second state in which the substrate is rotated while the developing solution is ejected from the second ejection port; and a second liquid contact surface which forms an edge portion of the second ejection port and is in contact with a liquid film of the developing liquid on the substrate in the second state.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a developing device. BACKGROUND

[0002] In manufacturing a semiconductor device, a developing process of supplying a developing solution to a resist film formed on a semiconductor wafer (hereinafter referred to as a wafer) as a substrate to form a pattern is performed. The developing process is sometimes performed by spraying a developing solution from a spray outlet of a nozzle while moving the nozzle on a wafer in such a manner that a lower surface of the nozzle on which the spray outlet is formed is brought into contact with a liquid surface of a pool of the developing solution supplied to the wafer. A developing device in which such a process is performed is shown in Patent Literature 1.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Laid-Open No. 2022-24733 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present disclosure can improve the convenience of a developing device.

[0008] SOLUTION TO PROBLEM

[0009] The developing device of the present disclosure has:

[0010] a holding portion that holds a substrate;

[0011] a first nozzle that has a first spray outlet of a developing solution, the first spray outlet being elongated in a lateral direction in such a manner that a length thereof covers a width of the substrate;

[0012] a moving mechanism that is configured to move the first nozzle in a direction intersecting an elongation direction of the first spray outlet in a first state in which the developing solution is sprayed from the first spray outlet to the substrate;

[0013] a first liquid contact surface that forms a rim portion of the first spray outlet and is brought into contact with a liquid film of the developing solution formed on the substrate in the first state;

[0014] a second nozzle that has a second spray outlet of a developing solution, the second spray outlet being formed so as to have a length in the elongation direction of the first spray outlet that is shorter than a length of the first spray outlet in the elongation direction;

[0015] a rotating mechanism that rotates the holding portion to become a second state in which the substrate is rotated in a period in which the developing solution is sprayed from the second spray outlet to the substrate; and

[0016] The second liquid contact surface, which forms the edge of the second nozzle, contacts the liquid film of the developer formed on the substrate in the second state.

[0017] According to the developing apparatus described above, wherein...

[0018] The plurality of retaining portions are provided in a manner that separates them in the left-right direction.

[0019] A first standby section for waiting for the first nozzle is provided between the holding sections in the left-right direction.

[0020] For each of the holding parts, a second standby part for waiting for the second nozzle is provided on either the left or right side of each holding part.

[0021] According to the developing apparatus described above, wherein...

[0022] The system includes a first standby section for activating the first nozzle and a second standby section for activating the second nozzle.

[0023] The lateral movement area of ​​the first nozzle on the movement path between the first standby section and the developer spraying position on the substrate is located above the lateral movement area of ​​the second nozzle on the movement path between the second standby section and the developer spraying position on the substrate.

[0024] According to the developing apparatus described above, wherein...

[0025] A second standby section is provided for allowing the second nozzle to wait.

[0026] The second standby unit includes:

[0027] A recess, the upper end of the sidewall of which is located above the lower surface of the second nozzle during the waiting period, thereby surrounding the lower side of the second nozzle; and

[0028] A supply port is provided in the recess to supply cleaning fluid to clean the second liquid contact surface and side surface of the second nozzle.

[0029] According to the developing apparatus described above, wherein...

[0030] A control unit is provided, which outputs a control signal to sequentially form, for the same substrate, either a first state in which the first liquid contact surface contacts the liquid film of the developer, or a second state in which the second liquid contact surface contacts the liquid film of the developer, and another state.

[0031] Effects of the utility model

[0032] The present disclosure can improve the convenience of a developing device. BRIEF DESCRIPTION OF DRAWINGS

[0033] Figure 1 is a plan view showing a developing device of the present disclosure.

[0034] Figure 2 is Figure 1 is a longitudinal sectional rear view of the rotating holding disk.

[0035] Figure 3 is a longitudinal sectional side view of the rotating holding disk.

[0036] Figure 4 is a longitudinal sectional side view of the rotating holding disk.

[0037] Figure 5 is a schematic plan view showing a first developing method.

[0038] Figure 6 is a schematic plan view showing a first developing method.

[0039] Figure 7 is a schematic plan view showing a first developing method.

[0040] Figure 8 is a schematic plan view showing a first developing method.

[0041] Figure 9 is a longitudinal sectional side view showing a supply of a developing solution in the first developing method.

[0042] Figure 10 is a longitudinal sectional side view showing a supply of a developing solution in the first developing method.

[0043] Figure 11 is a longitudinal sectional side view showing a supply of a cleaning solution in the first developing method.

[0044] Figure 12 is a longitudinal sectional side view showing a supply of a developing solution in the first developing method.

[0045] Figure 13 is a longitudinal sectional side view showing a supply of a developing solution in the first developing method.

[0046] Figure 14 is a schematic plan view showing a second developing method.

[0047] Figure 15 is a schematic plan view showing a second developing method.

[0048] Figure 16 is a schematic plan view showing a second developing method.

[0049] Figure 17 is a schematic plan view showing the second developing method.

[0050] Figure 18 is a schematic plan view showing the second developing method.

[0051] Figure 19 is a longitudinal sectional side view showing the nozzle slot.

[0052] Figure 20 is a transverse sectional plan view showing the nozzle slot.

[0053] Figure 21 is a perspective view showing the cleaning section of the above-described nozzle slot.

[0054] Figure 22 is a longitudinal sectional side view showing the cleaning process by the above-described nozzle slot.

[0055] Figure 23 is a longitudinal sectional side view showing a modification of the above-described nozzle slot.

[0056] Figure 24 is a longitudinal sectional side view showing a modification of the above-described nozzle slot. DETAILED DESCRIPTION

[0057] A developing device 1 as one embodiment of the developing device of the present disclosure will be described. Figure 1 is a plan view showing the developing device 1, showing a state where the nozzles 10, 20, 30 described later are arranged in the nozzle slots B1, B2, B3, respectively. In the present embodiment, XYZ orthogonal coordinate system is used for the description, and the X direction is sometimes referred to as the lateral direction, and one side where the rotary holding plate 41R as a substrate holding section is provided is sometimes referred to as the right, and one side where the rotary holding plate 41L is provided is sometimes referred to as the left. The Y direction is sometimes referred to as the front-back direction, and one side where the moving mechanisms 14, 24, 34 are provided is sometimes referred to as the front, and one side where the rotary holding plates 41R, 41L are provided is sometimes referred to as the back. Further, in the case where matters common to both the rotary holding plates 41R, 41L are described, the rotary holding plate 41 is sometimes simply referred to.

[0058] On the upper surface of the developing device 1, rotary holding disks 41R, 41L separated in the left-right direction are arranged. Further, a wafer (substrate) W on which an exposed resist film (not shown) is provided is carried into the developing device 1, and the wafer W is placed on each of the rotary holding disks 41R, 41L to sequentially undergo a developing process based on the supply of a developing liquid and a cleaning process based on the supply of a cleaning liquid. The developing device 1 of the present embodiment is provided with a first developing liquid supply mechanism D1, a second developing liquid supply mechanism D2, and a cleaning liquid supply mechanism R1, the first developing liquid supply mechanism D1 and the second developing liquid supply mechanism D2 are configured to supply a developing liquid by having first nozzles 10 and second nozzles 20 having different shapes, and the cleaning liquid supply mechanism R1 is configured to supply a cleaning liquid by a cleaning nozzle 30.

[0059] The cleaning liquid supply mechanism R1 has the cleaning nozzle 30 which ejects a cleaning liquid such as pure water, a nozzle arm 33 on which the cleaning nozzle 30 is provided at the front end side, a moving mechanism 34 which supports the base end side of the nozzle arm 33 and appropriately displaces the nozzle arm 33, and a processing liquid supply mechanism 36 which supplies the cleaning liquid to the nozzle 30. The cleaning liquid supply mechanism R1 is provided for each of the rotary holding disks 41R, 41L, and a nozzle groove B3 which becomes a standby position of the cleaning nozzle 30 is arranged on the right side of each of the rotary holding disks 41R, 41L.

[0060] Similarly to the cleaning liquid supply mechanism R1, the first developing liquid supply mechanism D1 has the first nozzles 10 which eject a developing liquid, a nozzle arm 13 on which the first nozzles 10 are provided at the front end side, a moving mechanism 14 which supports the base end side of the nozzle arm 13 and appropriately displaces the nozzle arm 13, and a processing liquid supply mechanism 16 which supplies the developing liquid to the nozzles 10, and the second developing liquid supply mechanism D2 has the second nozzles 20 which eject a developing liquid, a nozzle arm 23 on which the second nozzles 20 are provided at the front end side, a moving mechanism 24 which supports the base end side of the nozzle arm 23 and appropriately displaces the nozzle arm 23, and a processing liquid supply mechanism 26 which supplies the developing liquid to the nozzles 20. The second developing liquid supply mechanism D2 is provided for each of the rotary holding disks 41R, 41L, and a nozzle groove (second standby portion) B2 which becomes a standby position of the nozzles 20 is arranged on the left side of each of the rotary holding disks 41R, 41L. Thus, with respect to the wafer W held in one of the rotary holding disks 41R, 41L, the second nozzles 20 arranged on the left side in the standby state and the cleaning nozzle 30 arranged on the right side in the standby state are used for the processing when viewed from the rotary holding disk 41 holding the wafer W.

[0061] Further, the moving mechanisms 14, 24, 34 that displace the positions of the nozzles as described above are constituted by a lifting mechanism that connects the nozzle arms 13, 23, 33 and lifts the nozzle arms 13, 23, 33, and a horizontal moving mechanism that connects the lifting mechanisms and horizontally moves the lifting mechanisms in the left-right direction. In the drawings, the lifting mechanisms are indicated by the numerals followed by the letter "A".

[0062] The lifting mechanisms 24A of the second developer supply mechanisms D2 and the lifting mechanisms 34A of the cleaning liquid supply mechanisms R1 are moved in the left-right direction by the horizontal moving mechanisms disposed in front of each of the rotary holding plates 41R, 41L. As for the horizontal moving mechanisms connected to the lifting mechanisms 24A, 34A, respectively, the horizontal moving mechanisms provided in correspondence with the same rotary holding plate 41 are collectively indicated as one horizontal moving mechanism G2. The lifting mechanism 14A of the first developer supply mechanism D1 is constituted to be connected to the horizontal moving mechanism G1 disposed in a manner that straddles the front of the two horizontal moving mechanisms G2 and is moved in the left-right direction by the horizontal moving mechanism G1. Thus, the moving mechanism 14 is located in front of the moving mechanisms 24, 34.

[0063] The first developer supply mechanism D1 is shared by the rotary holding plates 41R, 41L. Further, as will be described later, the rotary holding plates 41R, 41L are provided in each of the cups 44, respectively, and thus it can also be said that the first developer supply mechanism D1 is shared by the two cups 44. The nozzle slot (first standby portion) B1 that becomes the standby position of the nozzle 10 is disposed between the rotary holding plates 41R, 41L when viewed from above, and the nozzle slots B3, B1, B2 are arranged in this order from left to right between the rotary holding plates 41R, 41L. Thus, when the nozzle 10 moves from the nozzle slot B1 to the rotary holding plates 41R, 41L in order to supply the developer, it moves in the left-right direction in a manner that passes above the nozzles 30, 20 that are in the standby position. Further, the nozzle slots B1 to B3 have recesses to be able to accommodate the lower portions of the nozzles and make them wait.

[0064] For the lifting mechanisms 14A, 24A, 34A that are the same in structure, the lifting mechanism 14A is simply described as representative, and a motor, a ball screw disposed so as to rotate by the motor while going to the Z direction, and a guide rail for guiding the movement are provided in the lifting mechanism 14A, but the illustration is omitted. Further, by rotating each ball screw whose rotation amount is controlled by the control section 100 to be described later, the moving mechanism 14 and the nozzle arm 13 are appropriately displaced in the Z direction. The horizontal moving mechanisms G1, G2 are the same in structure as each of the lifting mechanisms except for the extending directions of the ball screws and the guide rails.

[0065] The supply path 15, connecting nozzle 10 to the processing liquid supply mechanism 16, is installed continuously from nozzle arm 13 to moving mechanism 14. The supply path 25, connecting nozzle 20 to processing liquid supply mechanism 26, is installed continuously from nozzle arm 23 to moving mechanism 24. The supply path 35, connecting nozzle 30 to processing liquid supply mechanism 36, is installed continuously from nozzle arm 33 to moving mechanism 34. Representatively, the supply path 15 is provided with valves (not shown). The processing liquid supply mechanism 16 includes a tank for storing developer solution pre-made for developing an anti-corrosion film and a flow regulating mechanism for adjusting the flow rate of the developer solution. Based on the above structure, nozzle 10 is configured to eject a pre-set flow rate of developer solution.

[0066] Figure 2 yes Figure 1 The longitudinal sectional rear view of the rotating holding disk 41L shown also shows nozzles 10, 20, and 30 that supply processing fluid to the wafer W supported on the rotating holding disk 41L. Figure 3 , Figure 4 yes Figure 1 The longitudinal sectional side view of the rotating retaining disk 41L shown. Figure 3 The first developer supply mechanism D1 during horizontal movement and the second developer supply mechanism D2 during developer supply are represented by solid lines, while the second developer supply mechanism D2 during horizontal movement is represented by a dashed line. Figure 4 D1 indicates the first developer supply mechanism when supplying developer.

[0067] Nozzles 10, 20, and 30 each have an outlet 12, 22, and 32 respectively opened at the center of their downward-facing front end faces (lower end faces) 11, 21, and 31. Outlet 12 is used to spray developing solution supplied from the processing solution supply mechanism 16 via supply path 15; outlet 22 is used to spray developing solution supplied from the processing solution supply mechanism 26 via supply path 25; and outlet 32 ​​is used to spray cleaning solution supplied from the processing solution supply mechanism 36 via supply path 35. Nozzle 30 has a small-diameter circular outlet that opens vertically downwards.

[0068] The nozzle 10 is cuboid in shape, and its height is longer than the width of the shorter side of the front end face 11. The nozzle outlet 12 is a long, narrow slit extending orthogonally to the moving direction of the nozzle 10, i.e., the X direction (i.e., the lateral direction), and extends in the Y direction (i.e., the lateral direction) in a manner that continuously covers the width (i.e., the diameter) of the wafer W supported on the rotating holding disks 41R and 41L. The front end face 11 of the nozzle 10 is formed into a rectangular frame surrounding the nozzle outlet 12.

[0069] Nozzle 20 is cylindrical, and its height is smaller than that of nozzle 10. The front end face 21 of nozzle 20 is an annular surface forming the edge of the nozzle exit 22. Additionally, a circular nozzle exit 22 is formed at the center of the circular surface of the front end face 21, and the diameter of this circular surface is smaller than the radius of the wafer W. Therefore, the corresponding width (in this case, the diameter) of the portion of the nozzle exit 22 with the greatest width is smaller than the size of the nozzle exit 12 along the length of the slit. The area of ​​the front end face 21 is smaller than the surface area of ​​the wafer W, for example, it can be 1% to 15%, 1% to 11%, or 1% to 3% of the surface area of ​​the wafer W. The area (opening area) of the nozzle exit 22 can be approximately 0.3% to 5% of the area of ​​the front end face 21.

[0070] The amount of developer ejected from nozzle 10, which has a relatively large outlet 12, is greater than the amount of developer supplied to nozzle 20. Both nozzles 10 and 20 supply developer in a state where the front surfaces 11 and 21 of the ejected developer are in contact with the liquid film of developer formed on the wafer W (liquid contact state).

[0071] like Figure 2 As shown, the rotating holding disk 41 is connected to the rotating mechanism 43 via a rotating shaft 42. Through this rotating mechanism 43, the rotating holding disk 41 is configured to rotate freely about a vertical axis while holding the wafer W. Furthermore, the diameter of the wafer W is, for example, 300 mm. A horizontal circular plate 45 surrounding the rotating shaft 42 is provided on the lower side of the rotating holding disk 41. Figure 46 shows a lifting pin passing through the circular plate 45, which is raised and lowered by a lifting mechanism 47, transferring the wafer W between the wafer W transport mechanism (not shown) and the rotating holding disk 41.

[0072] Furthermore, a liquid receiving portion 48, formed by creating an annular recess, is continuously provided around the outer circumference of the circular plate 45, and a drain port 48a is provided in this liquid receiving portion 48. The liquid receiving portion 48 forms the bottom of the cup 44 described later. In addition, an annular body 49 is provided at the periphery of the circular plate 45, with its upper end close to the back side of the wafer W. This annular body 49 is formed into a mountain shape when viewed in longitudinal section to guide the falling liquid to the liquid receiving portion 48. In addition, an exhaust pipe 48b for venting the contents of the cup 44 is provided in the liquid receiving portion 48. The downstream side of the exhaust pipe 48b is connected to the factory's exhaust path via a valve whose opening degree can be changed to switch the exhaust volume, but this is not shown.

[0073] Furthermore, the developing apparatus 1 includes a cup 44 surrounding the periphery of the wafer W placed on the rotating holding disk 41. The cup 44 consists of an outer cup 44S, an inner cup 44T disposed inside it, and the aforementioned liquid receiving portion 48. When the outer cup 44S is raised or lowered by the lifting mechanism 44U, the inner cup 44T is raised or lowered in conjunction with the outer cup 44S, and the relative height of the inner cup 44T relative to the outer cup 44S remains the same in the raised and lowered positions. Figure 2 The inner cup 44T and outer cup 44S are represented by dashed lines and solid lines, respectively, indicating their rising and falling positions. In later texts, the rising and falling positions of the inner cup 44T and outer cup 44S may sometimes be recorded as the rising and falling positions of cup 44.

[0074] The outer cups 44S and 44T are respectively rectangular and cylindrical, with openings in the vertical direction. The openings are rectangular and circular, respectively. The outer cups 44S and 44T are arranged to extend upward from the area surrounded by the outer wall of the liquid receiving portion 48. The width of the upper opening of the inner cup 44T is larger than the diameter of the wafer W supported on the rotating holding disk 41. In longitudinal section view, the upper part of the inner cup 44T forms an inclined surface by tilting upward and inward. Moreover, the upper part of the inner cup 44T is located below the wafer W in the descending position so as not to obstruct the movement of the first nozzle 10, which moves as described later, and above the wafer W in the rising position so as to catch droplets flying from the wafer W using the inclined surface and guide the droplets toward the lower liquid receiving portion 48.

[0075] The upper end of the outer cup 44S is higher than the upper end of the inner cup 44T. The upper portion of the outer cup 44S, even in the lowered position, is also higher than the wafer W placed on the rotating holding disk 41, thus preventing developer from scattering when development is performed using the first nozzle 10 while the cup 44S is in the lowered position. Specifically, as... Figure 4 As shown, when the developer is supplied, the nozzle 10, which is positioned close to the top of the wafer W, is located inside the upper part of the outer cup 44S, which is in a lowered position. The center of the nozzle 10 in the long side direction moves along a diameter parallel to the transverse direction of the wafer W, so as to supply the developer without contacting the outer cup 44S.

[0076] Furthermore, when processing is performed using nozzle 20 or cleaning nozzle 30, cup 44 is in the rising position (see reference). Figure 3 During this process, the inner circumferential surface of the inner cup 44T can catch the liquid that splashes off the wafer W due to the rotation of the wafer W.

[0077] As the moving path in the case of supplying the developing solution or the like using the nozzle arm 13, 23, 33, first, the nozzle arm 13, 23, 33 in the standby state is raised to cause the nozzle 10, 20, 30 to exit from the nozzle slot Bl, B2, B3. Next, the nozzle arm 13, 23, 33 is lowered after being moved in the horizontal direction (i.e., the lateral direction) to the position directly above the ejection position, to dispose the nozzle 10, 20, 30 at the ejection position. The nozzle 10, 20, 30 at the ejection position is disposed in a manner that the lower end side is housed in the cup 44 at the raised position or the lowered position. Specifically, the ejection position with respect to the nozzle 10, 20 is a position at which the front end face 11, 21 approaches the surface of the wafer W and contacts the liquid film of the developing solution formed on the surface of the wafer W. The ejection position with respect to the nozzle 30 is a position at which the front end face 31 is relatively far from the wafer W and the front end face 31 does not contact the liquid film of the cleaning solution ejected to the wafer W. Figure 2 The arrow in FIG. 10 indicates the moving path of such a nozzle 10, 20, 30.

[0078] When the nozzle 10, 20, 30 ends the ejection of the liquid and returns to the nozzle slot, the nozzle slot is returned by sequentially performing the raising, the horizontal movement, and the lowering. That is, the moving path is opposite to that indicated by the arrow. However, since the nozzle 10 is shared by the rotation holding plates 41L, 41R, sometimes the nozzle is moved to the ejection position for the wafer W of the other rotation holding plate 41 by the raising, the horizontal movement, and the lowering after ending the ejection of the liquid to the wafer W of one rotation holding plate 41.

[0079] In FIG. 10, Figure 3 In FIG. 10, the moving region at the time of the horizontal movement of the nozzle 10 is indicated as a horizontal movement region Al, and the moving region at the time of the horizontal movement of the nozzle 20 is indicated as a horizontal movement region A2. The horizontal movement region A2 is also the moving path at the time of the horizontal movement of the nozzle 30. The horizontal movement region Al is located at a position higher than the horizontal movement region A2. The reason why the horizontal movement region Al of the nozzle 10 is set at a position higher than the horizontal movement region A2 of the nozzles 20, 30 is described below.

[0080] First, as described above, the nozzle 10 has the ejection port 12 long in the Y direction at the lower end. In order to uniformly eject the developing solution from each part of the ejection port 12, it is necessary to make the length of the flow path formed between the downstream end of the supply path 15 connected to the upper side of the nozzle 10 and the ejection port 12 relatively large. That is, in order to utilize the natural diffusion in the Y direction during the flow of the developing solution in the flow path formed in the nozzle 10, the nozzle 10 becomes a relatively high height. On the other hand, the ejection port of the nozzles 20, 30 is small in diameter as described above, and thus the nozzles 20, 30 do not need to form a high height.

[0081] Moreover, the lifting distance of the nozzle 20, 30 required when moving the nozzle 20, 30 between the ejection position and the nozzle slot B2, B3 will be assumed to be α in the case where the development device 1 is provided with only the nozzles 20, 30 and not the nozzle 10. The lifting distance becomes larger in the case where the horizontal movement region A2 of the nozzles 20, 30 is set above the horizontal movement region Al in the development device 1 compared to the lifting distance α. That is, the amount of increase in the lifting distance due to the action of avoiding the high nozzle 10 that is not required in the original processing of the nozzles 20, 30 is large. A large lifting distance means that the lifting mechanism is made large. That is, from the viewpoint that a large movement mechanism is required due to the action that is not required in the original processing of the nozzles 20, 30, it is not desirable to set the horizontal movement region A2 above the horizontal movement region Al.

[0082] In addition, from the viewpoint of achieving power saving of each movement mechanism that moves the nozzles, reduction of dust emission, and the like, it is preferable to make the movement mechanism small. Specifically, it is preferable to use a small motor as the motor that constitutes the movement mechanism, or to use a thin ball screw, a guide rail. The nozzles 20, 30 are lighter than the nozzle 10 based on the difference in the shape described above. If it is assumed that the movement mechanisms 24, 34 that move the nozzles 20, 30 are located on the front side than the movement mechanism 14 that moves the nozzle 10, the nozzle arms 23, 33 that support these nozzles 20, 30 need to be relatively long, and it can be difficult to make the movement mechanisms 24, 34 small. Thus, as described above, the movement mechanism 14 is disposed on the front side of the movement mechanisms 24, 34.

[0083] Moreover, the horizontal movement region A2 of the nozzles 20, 30 moved by the movement mechanisms 24, 34 disposed on the front side as such is set on the upper side than the horizontal movement region Al of the nozzle 10 moved by the movement mechanism 14 disposed on the rear side. In this case, the horizontal movement region Al is used as a lifting region of the nozzles 20, 30, and thus the nozzle 10 and the nozzle arm 13 connected thereto avoid interference with the nozzles 20, 30 and the nozzle arms 23, 33 connected thereto and move in the horizontal movement region Al. The action setting of each nozzle 10, 20, 30 when such interference is prevented can become complicated. In order to prevent the above adverse situation, it is preferable to set the horizontal movement region Al of the nozzle 10 on the upper side than the horizontal movement region A2 of the nozzles 20, 30.

[0084] Alternatively, the movement of each nozzle can be controlled so that the nozzle 10 and nozzle arm 13 moving in the horizontal movement area A1 overlaps with the nozzles 20, 30 and nozzle arms 23, 33 moving in the horizontal movement area A2 when viewed from above. However, to reliably prevent interference between nozzles and nozzle arms, such overlap is preferably avoided. For example, when the nozzle 10 moves in the horizontal movement area A1 from the nozzle slot B1 or the rotating holding disk 41L to process the wafer W on the right-side rotating holding disk 41R, the nozzles 20 and 30, which are correspondingly arranged on the rotating holding disk 41R, wait in the nozzle slot, and the nozzle 10 moves above the waiting nozzle 20 and then above the wafer W.

[0085] like Figure 3 As shown, when the developer and cleaning solution are supplied using nozzles 20 and 30, the liquid is scattered around the wafer W due to its rotation, causing the cup 44 to move. Figure 2 The rising position, indicated by a dashed line, prevents liquid splattering. A bend 23a is formed in the nozzle arm 23 to prevent the nozzle 20 from contacting the outer cup 44S in the rising position when the nozzle 20 is positioned in the ejection position. The bend 23a is formed in a mountain-shaped curve when viewed in the X direction, creating a recess on the lower surface of the nozzle arm 23. When the nozzle 20 is positioned in the developer ejection position, the upper end of the outer cup 44S enters this recess, thereby preventing the aforementioned contact.

[0086] A liquid receiving portion 23b is formed above the curved portion 23a and the front end of the nozzle arm 23. This liquid receiving portion 23b is configured to store developing solution dripping from the nozzle 10 passing above the nozzle arm 23. The liquid receiving portion 23b extends from the inclined surface of the front end side of the curved portion 23a to the front end side of the nozzle arm 23. A recess 23c with an upward opening is formed on the upper surface of the liquid receiving portion 23b. When viewed from the side, the recess 23c is located between the upper surface of the top of the curved portion 23a and the upper surface of the front end of the nozzle arm 23. The depth of the recess 23c gradually increases from the base end side to the front end side above the curved portion 23a, and becomes approximately uniform in the nozzle arm 23 at a position closer to the front end side than the curved portion 23a.

[0087] like Figure 1 As shown, the developing apparatus 1 is provided with a control unit 100 that is connected to each part of the developing apparatus 1 as described above. The control unit 100 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the developing process of the wafer W in the developing apparatus 1. In addition, the program can also be recorded in a computer-readable storage medium and loaded from the storage medium to the control unit 100.

[0088] In the program, instructions (steps) are incorporated to output control signals to each part of the developing device 1 through the installed program, by which the movement of the first developer supply mechanism Dl, the movement of the second developer supply mechanism D2, the movement of the cleaning liquid supply mechanism Rl, the supply of the developer, the supply of the cleaning liquid, the nozzle cleaning operation of the nozzle slots Bl to B3 are controlled. The control section 100 is provided with one or more control circuits to be able to execute the steps of the program.

[0089] Next, the first developing method of the developing device 1 will be explained using the flowchart shown in Figures 5-13 . Figures 5-8 is a schematic plan view showing the first developing method, only the outer cup 44S located above the wafer W and the inner cup 44T in the raised position are shown, the inner cup 44T in the lowered position is not shown, in Figure 14 the following drawings is the same. Figures 9-13 is a longitudinal sectional side view showing the supply method of the liquid in the first developing method, in these Figures 5-13 , the developer is marked with a dot, in the following drawings is the same. In the explanation, sometimes the positive direction of the X direction is shown as the X direction (+), sometimes the negative direction of the X direction is shown as the X direction (-). Each plan view shows the processing for the wafer W placed on the rotary holding disc 41R.

[0090] At the start of the developing processing, first, the wafer W carried by the not-shown substrate carrying mechanism is arranged on the protruding lift pin 46 and is lowered so that the wafer W is held by suction to the rotary holding disc 41R. The wafer W held to the rotary holding disc 41 is subjected to the supply of the developer by the nozzle 20 Figure 5 ) → the supply of the cleaning liquid by the nozzle 30, removal Figure 6 ) → the supply of the developer by the nozzle 10 Figure 7 ) → the supply of the cleaning liquid by the nozzle 30, removal Figure 8 ).

[0091] The series of processing is described in detail so that the nozzle 20 is moved from the nozzle slot B2 to the developer ejection position on the wafer W, the ejection port 22 is arranged directly above the center portion of the wafer W. Then, as shown in Figure 5 , Figure 9 , in the state where the cup 44 is arranged in the raised position, the processing liquid supply mechanism 26 Figure 1The developer solution is ejected from the nozzle 20 through the outlet 22. During the ejection of the developer solution, while the wafer W is rotated at a relatively low speed by the rotating mechanism 43 (second state), the outlet 22 is moved horizontally along the radius of the wafer W from the center of the wafer W toward the X direction (-) which serves as the nozzle groove B2 side. As a result, a liquid film P2 of the developer solution is formed on the wafer W.

[0092] like Figure 9 , Figure 10 As shown, during the process of supplying developer using nozzle 20, the wafer W and the nozzle outlet 22 are moved relative to each other while developer is ejected from the nozzle outlet (second nozzle outlet) 22 in a liquid contact state. The liquid contact state is the state in which the leading edge surface (second liquid contact surface) 21 forming the edge of the nozzle outlet 22 is in contact with the liquid film P2. In this way, the leading edge surface 21 contacts the liquid film P2 while the nozzle 20 is moving and the wafer W is rotating, thus applying shear stress in the direction opposite to the rotation direction of the wafer W and shear stress in the moving direction of the nozzle 20 to the region below the leading edge surface 21 in the liquid film P2. This stress agitates the developer in this region, thereby accelerating the development reaction.

[0093] Then, when the nozzle 20 reaches the periphery of the wafer W and the front end face 21 has passed over the entire surface of the wafer W, i.e., the development process of the entire surface of the wafer W is completed, the ejection of the developer stops, the nozzle 20 rises and returns to the nozzle groove B2. Next, the cleaning solution is supplied to the center of the wafer W by the nozzle 30, which moves from the nozzle groove B3 to the center of the wafer W, and the wafer W is rotated relatively quickly. As a result, the developer and cleaning solution are thrown off towards the outer periphery of the wafer W, thereby removing the developer from the surface of the wafer W. Figure 6 , Figure 11 ).

[0094] Then, the spraying of the cleaning solution stops, and nozzle 30 rises and returns to nozzle slot B3. Even after the supply of cleaning solution stops, the wafer W continues to rotate to discard and remove the cleaning solution. When wafer W is dry, the rotation of wafer W stops. Cup 44 is positioned in the lowered position, and nozzle 10 moves from nozzle slot B1 to the right-hand side of the outer cup 44S where wafer W is ejected, and the developer solution begins to spray out. Figure 12 Nozzle 10 moves to the left, forming a liquid film P1 of developer on wafer W. Figure 7 , Figure 13The nozzle 10's leading edge (first liquid contact surface) 11 is brought into liquid contact with the liquid film P1, and the movement of the nozzle 10 and the ejection of the developer from the ejection outlet (first ejection outlet) 12 continue. As the liquid film P1 is formed on the wafer W, when the nozzle 10 moves to the left end within the outer cup 44S in top view, the ejection of the developer stops, and the nozzle 10 returns to the nozzle slot B1, or moves to the wafer W on the rotating holding disk 41L for processing. After the wafer W is kept stationary for a predetermined time to allow the development process to progress, the liquid film P1 is removed by supplying cleaning fluid through the nozzle 30, similar to the removal process of the liquid film P2, and the development of the resist film based on the first development method ends.

[0095] Furthermore, the wafer W on the rotating holding disk 41L is processed in the same way as the wafer W on the rotating holding disk 41R. However, when the nozzle 10 begins to eject the developer, it is located at the left end inside the outer cup 44S. While moving towards the right end inside the outer cup 44S, it ejects the developer to form a liquid film P1 on the wafer W. Then, after moving towards the right end inside the outer cup 44S, it returns to the nozzle slot B1 or goes to the rotating holding disk 41R to process the next wafer W. As described above, the flow path inside the tall nozzle 10 is large, so developer is prone to remain. However, the nozzle 10 does not pass through the wafer W where the liquid film P1 has been formed. Therefore, even if the developer remaining in the flow path drips from the nozzle 10, it will not fall onto the already formed liquid film P1. Thus, it is possible to prevent defects in the developing process. Furthermore, when the wafer W is processed on the rotating holding disk 41R and passes through the horizontal movement area A1 to the nozzle groove B1, even if the developer drips from the nozzle 10 onto the nozzle arm 23 during the waiting period, it will be caught by the recess 23c of the liquid receiving part 23b, thereby suppressing contamination of the nozzle arm 23. Thus, when the developer is supplied through the nozzle 20, unwanted dripping of developer from the nozzle arm 23 onto the wafer W can be suppressed.

[0096] Next, the second developing method will be described using [the following text is incomplete and requires further context]. Figures 14-17 Let me explain this method. Figures 14-17 This is a schematic top view illustrating the second developing method. In the second developing method, unlike the first developing method, after the developing solution is first supplied through nozzle 10, it is supplied through nozzle 20. Specifically, the developing solution is supplied to the wafer W held on the rotating holding disk 41R using nozzle 10. Figure 14 → The cleaning fluid is supplied and removed using nozzle 30. Figure 15 → The developer is supplied using nozzle 20. Figure 16 → The cleaning fluid is supplied and removed using nozzle 30. Figure 17 ).

[0097] The series of processes are described in detail as follows: Figure 14 As shown, the supply of the developing solution is performed by the nozzle 10 in the same manner as in the first developing method. As for the subsequent cleaning process (supply and removal of the cleaning solution), it is also performed in the same manner as in the first developing method. Then, as for the developing process performed subsequently by the nozzle 20, for example, the nozzle 20 is disposed on the central portion of the wafer W, and the front end face 21 of the nozzle 20 is brought into contact with the liquid film P2 of the developing solution sprayed (Fig. 6B). Figure 16 At this time, the wafer W is rotated, but the nozzle 20 is stationary. Thus, by locally generating the stirring action of the developing solution at the central portion of the wafer W, the progress of the developing reaction at this portion is made relatively large. Subsequently, after the supply of the developing solution is stopped and the nozzle 20 is moved to the nozzle slot B2, the cleaning process is performed in the same manner as in the preceding cleaning process.

[0098] The reason for performing the developing twice using the nozzles 10, 20 as in the above first developing method and second developing method is explained. First, the first developing method is explained. The liquid repellency or the liquid affinity of the resist film surface to the developing solution has diversity depending on the type of resist. That is, the interfacial tension between the developing solution supplied to the resist and the resist film surface differs depending on the type of resist. The nozzle 10 is capable of supplying the developing solution to the wafer W with high in-plane uniformity by the nozzle outlet 12 having the shape described above, but depending on the interfacial tension, the developing solution immediately after being supplied to the wafer W can undesirably flow to reduce the in-plane uniformity of the process. In addition, an area not covered with the developing solution can be generated in the wafer W.

[0099] To prevent this undesirable situation, the developing is performed first by the nozzle 20. As described above, the shear stress generated by the rotation of the wafer W and the movement of the nozzle 20 is received, and thus the developing progresses in a state where the developing solution flows at a relatively large flow rate between the nozzle 20 and the wafer W under the nozzle 20. Therefore, the influence of the above interfacial tension is suppressed, and at the stage where the developing by the nozzle 20 ends, the developing with relatively high uniformity is performed at each portion of the surface of the wafer W. Moreover, by the developing by the nozzle 20, the resist film is wetted and a part of the resist film is dissolved, and thus when the process by the nozzle 10 is started subsequently, the effect of the above interfacial tension is reduced, and therefore the nozzle 10 can be used to supply the developing solution to the wafer W with high in-plane uniformity, thereby improving the in-plane uniformity of the process.

[0100] Next, the second development method will be explained. Due to variations in the in-plane processing of wafer W from the formation of the resist film to development, sometimes even assuming uniform development within the plane of wafer W, the shape of the pattern may deviate at various locations in the radial direction of wafer W. That is, assuming uniform development in this way, sometimes the pattern in a certain area of ​​wafer W may form in a manner that progresses more slowly than the pattern in other areas. Figures 14-17 The pattern in the central region of the wafer W shown in the processing example is formed in a manner that the development progresses more slowly than that of other regions. Therefore, in the second development method, the wafer W is first developed with high in-plane uniformity using nozzle 10, and then nozzle 20 is positioned on the central region of the wafer W for processing, thereby accelerating the development progress of the central region and increasing the in-plane uniformity of the pattern at the end of the processing.

[0101] In this second development method, the arrangement of the nozzle 20 is arbitrary; it can be positioned within the plane of the wafer W where the development process is desired to accelerate, in order to improve the in-plane uniformity of the pattern. For example... Figure 18 As shown, the nozzle 20 can also be positioned on the periphery to accelerate the development process at that periphery. Furthermore, when it is desired to accelerate the development reaction in a portion of the wafer W's surface, the nozzle 20 is not limited to being stationary; it can be moved radially along the wafer W as described in the first development method. In this case, the degree of development progress at each portion of the wafer W can be adjusted by changing the moving speed of the nozzle 20, the rotational speed of the wafer W, and the flow rate of the ejected developer.

[0102] Regarding the first and second developing methods, a cleaning process (supply and removal of cleaning solution) is performed between the first and second developing processes. However, the first and second developing processes can also be performed consecutively without this cleaning process. Furthermore, regarding the first developing method using nozzle 20, it is shown that nozzle 20 is moved so that the front end face 21 passes over the entire surface of wafer W. However, this does not preclude the development process as shown in the second developing method, where nozzle 20 is stationary and partially positioned within a portion of the surface of wafer W. However, based on the stated purpose of the first developing method, it is preferable to move nozzle 20 during the process.

[0103] The developing process performed by the developing apparatus 1 is not limited to the developing process using both the nozzle 10 and the nozzle 20 as in the first developing method and the second developing method. If sufficient in-plane uniformity of a pattern can be obtained by developing using only one nozzle, only one nozzle can be used for the purpose of improving the productivity of the apparatus. As described above, according to the developing apparatus 1 of the present disclosure that includes the first developer supply mechanism D1 including the nozzle 10 and the second developer supply mechanism D2 including the nozzle 20, various developing methods can be performed, and thus the convenience of the developing apparatus can be improved.

[0104] Further, if only the nozzle 20 is used, the entire surface of the wafer W can be developed by moving along the radial direction of the wafer W as explained in the first developing method. In addition, it is shown that the nozzle 20 is moved from the center portion of the wafer W toward the peripheral portion, but can be moved in the opposite direction. Further, developing the entire surface of the wafer W means developing the entire formation region of the semiconductor device. Thus, when developing using the nozzle 20, the tip surface of the nozzle 20 can not be disposed at the peripheral end portion of the wafer W that is offset from the formation region.

[0105] In addition, regarding the advantage of supplying the developer by the liquid contact nozzle (nozzle whose lower end surface contacts with the liquid film on the wafer W at the time of processing) such as the nozzle 10 and the nozzle 20 of the present embodiment, it is explained by comparison with the supply of the developer by the non-contact liquid nozzle such as the nozzle 30 that is different from these liquid contact nozzles. In the case where the non-liquid contact nozzle such as the nozzle 30 shown in the drawing is disposed at a position far from the surface of the wafer W, for example, the developer is supplied locally to the center portion of the wafer W, and the developer is diffused toward the peripheral portion by the rotation of the wafer W, whereby the developer is supplied. According to the development using such a non-liquid contact nozzle, since the developer is continuously supplied locally to the center portion of the wafer W, it results in a difference in the progress degree of development between the center portion and the peripheral portion of the wafer W, and thus the in-plane uniformity of the pattern of the wafer W can be reduced. Figure 11

[0106] On the contrary, in either case where one of the two liquid contact nozzles (nozzles 10 and 20) is used for development or both are used for development, the supply position of the developer to the surface of the wafer W is moved, and the supply position of the developer is not fixed. Thus, according to the liquid contact nozzle, it is difficult to cause the development to progress locally as by using the non-liquid contact nozzle, and the reduction in the uniformity of the developing process can be suppressed.

[0107] ​In addition, the nozzle outlet 12 of the nozzle 10 is not limited to a slit-shaped opening, and can be formed by arranging a plurality of openings in a manner that covers the length of the width of the wafer W. The shape (outline) of the nozzle outlet 12 in this case can be circular or elliptical, can be polygonal, and can also be slit-shaped. The same applies to the nozzle 20 with respect to this matter.

[0108] Next, in describing the nozzle slots B1 to B3 that wait for the nozzles 10 to 30, the nozzle slot B2 is representatively described with reference to Figure 19 , a longitudinal cross-sectional side view, Figure 20 , a horizontal cross-sectional plan view. The nozzle slot B2, in addition to waiting for the nozzle 20 as above, also cleans the nozzle 20 during the waiting period with a cleaning liquid L that is not shown. The sites to be cleaned in the nozzle 20 are the front end face 11 and the lower side of the outer side face that are in contact with the liquid film of the developing liquid through the developing process described above. The nozzle slot B2 is provided with a housing portion 61 and a cleaning portion 71. The housing portion 61 is a rectangular box that is open at the top, and a drain path 62, 63 is formed in the bottom wall thereof.

[0109] The cleaning portion 71 is arranged inside the housing portion 61. The description is continued with reference to Figure 21 , a perspective view of the cleaning portion 71. The cleaning liquid L is supplied between the surface of the cleaning portion 71 and the surface of the nozzle 20 during the waiting period. The kind of liquid used as the cleaning liquid L is not limited, and, for example, pure water is used as the cleaning liquid L, and the cleaning portion 71 is formed of, for example, a fluororesin that is relatively high in hydrophobicity, to suppress the remaining of unnecessary liquid after the nozzle 20 is cleaned.

[0110] As shown in Figure 20 , Figure 21 , the general shape of the cleaning portion 71 is a thick plate that is rectangular with long notches formed in the front side and the rear side in the Y direction and is horizontally arranged, and the notches are formed in the central portions of the sides of the front side and the rear side when viewed in plan view. As shown in Figure 19 , the bottom surface of the thick plate is arranged on the bottom wall of the housing portion 61, and the outer side face of the thick plate is in contact with the inner side face of the housing portion 61, whereby the notches of the above-mentioned front side and rear side are open upward and form drain ports 72 that communicate with the drain paths 62. Further, a groove 73 that is circular arc-shaped when viewed in plan view is formed in the left side and the right side of the upper surface of the thick plate, and the two circular arcs formed by the groove 73 form a part of a circle with the center of the thick plate as the center. The both ends of the left side groove 73 are connected to the left side end portions of the respective drain ports 72, and the both ends of the right side groove 73 are connected to the right side end portions of the respective drain ports 72. In Figure 20 , the center of the above-mentioned circle is denoted as P, and the upper surface of the thick plate on the outer side of the groove 73 is denoted as 74.

[0111] like Figure 19 As shown, the side surface of the groove 73 is formed by a descending surface 73A that descends in a generally vertical direction from the upper surface 74 of the thick plate. The bottom surface of the groove 73 is formed by a curved surface 73B that is arc-shaped when viewed from the side and decreases in position towards the center P, thereby increasing the depth of the groove 73. The curved surface 73B is continuous with the descending surface 73A. In this way, since the groove 73 is formed such that the portion near the center P is deeper than the portion near the upper surface 74 of the thick plate, the cleaning fluid overflowing from the recess 76 (described later) and supplied to the groove 73 flows toward the drain port 72 without splashing onto the upper surface 74 of the thick plate.

[0112] Furthermore, a circular recess 76, centered on the aforementioned center P when viewed from above, is formed in the center of the thick plate. By forming this recess 76, its outer side is configured as an annular wall 77, and the outer surface of the annular wall 77 forms the side of the groove 73 near the center P. Moreover, the side of the recess 76 extends in the vertical direction. Furthermore, the upper end of the recess 76 (the upper end of the annular wall 77) is lower than the upper surface 74 of the thick plate.

[0113] The recess 76 forms a space for accommodating the nozzle 20 during waiting periods. The nozzle 20 enters and exits the recess 76 via the lifting action of the moving mechanism 24. A portion of the bottom surface of the recess 76 is raised, thereby forming a circular platform 78 and an annular groove 79 surrounding the platform 78. When viewed from above, the center of the platform 78 is center P, and the upper surface of the platform 78 forming a horizontal plane is located below the lower end of the groove 73. The diameter of the platform 78 is larger than the outer diameter of the lower surface of the nozzle 20, i.e., the front end face 21.

[0114] exist Figure 19 The nozzle 20 during the waiting period is indicated by a double-dotted line. Figure 20 The lower surface of the nozzle 20 during the waiting period is indicated by a double-dotted line. The upper end of the recess 76 is formed at a position lower than the upper surface of the nozzle 20 during the waiting period and higher than the upper surface of the platform 78. The side and bottom surfaces of the recess 76 surround the lower part of the nozzle 20 during the waiting period. Furthermore, the front end face 21 of the nozzle 20 during the waiting period faces the upper surface of the platform 78, and a gap 81 is formed between the front end face 21 of the nozzle 20 and the upper surface of the platform 78. Moreover, when viewed from above, the center of the front end face 21 of the nozzle 20 during the waiting period is aligned with the center P, and the front end face 21 of the nozzle 20 does not extend beyond the upper surface of the platform 78 when viewed from above. In addition, the position of the nozzle 20 during the waiting period is set as the standby position.

[0115] Drainage ports 82 are formed in two portions of the front side and the rear side of the bottom surface of the circular groove 79, and each of the drainage ports 82 is connected to the drainage path 63 provided in the housing portion 61. A cleaning liquid ejection port 83 is formed in the side surface of the recessed portion 76 at a position higher than the upper surface of the stage 78. A cleaning liquid L is supplied from a cleaning liquid supply mechanism 84 to the cleaning portion 71, and the cleaning liquid L is ejected from the ejection port 83 into the recessed portion 76 through a flow path formed in the cleaning portion 71 and the housing portion 61. The cleaning liquid supply mechanism 84 includes a valve and a flow rate adjustment mechanism, and the supply and cutoff of the cleaning liquid L to the ejection port 83 are controlled by opening and closing the valve, and the supply amount of the cleaning liquid L supplied to the ejection port 83 is adjusted by the flow rate adjustment mechanism.

[0116] The ejection port 83 is further described. The ejection port 83 is formed so as to be able to supply the cleaning liquid L to the stage 78 and the gap 81. Furthermore, when viewed from above, an extension line in the opening direction of the ejection port 83 is located at a position shifted with respect to the diameter of the recessed portion 76 along the diameter. Therefore, the cleaning liquid L ejected from the ejection port 83 flows in a clockwise direction along the side surface when viewed from above after being ejected to the side surface of the recessed portion 76, and forms a swirling flow in which the liquid is rolled up. The flow of the cleaning liquid L is indicated by a broken line arrow in FIG. 8. Figure 20 The swirling flow is formed in this way in order to form a relatively large flow of the cleaning liquid L in the entire gap 81 formed by the front end surface 21 of the nozzle 20 described above, and thereby efficiently perform cleaning of the front end surface 21.

[0117] The cleaning process of the nozzle 20 by the nozzle groove B2 is described using a longitudinal sectional view of the nozzle groove B2. Figure 22 In a state in which the nozzle 20 is located in the standby position, the cleaning liquid L is supplied from the cleaning liquid supply mechanism 84 to the ejection port 83, and a swirling flow is formed in the gap 81 between the nozzle 20 and the stage 78 in the recessed portion 76 by ejecting the cleaning liquid L from the ejection port 83, so as to clean the front end surface 21 of the nozzle 20.

[0118] A part of the cleaning liquid L supplied in this way flows to the drainage port 82 of the circular groove 79 and is removed from the recessed portion 76, but the supply amount of the cleaning liquid L supplied from the ejection port 83 is adjusted to be larger than the discharge amount from the drainage port 82, so that the liquid level of the cleaning liquid L in the recessed portion 76 rises. Then, a part of the cleaning liquid L overflows from the recessed portion 76 to the groove 73, flows from the groove 73 to the drainage port 72, and is removed.

[0119] Due to the influence of the rotational flow formed in the gap 81, the cleaning liquid L also flows in a relatively large amount in the circumferential direction of the recess 76 in the region near the liquid surface in the recess 76. In addition, by overflowing from the recess 76, a liquid flow is formed from the lower side toward the upper side in addition to the liquid flow formed in the circumferential direction. The cleaning is performed by immersing the side surface of the nozzle 20 in the cleaning liquid L, but in addition to the immersion as such, the cleaning is efficiently progressed by the action of these liquid flows. After a prescribed time has elapsed, the ejection of the cleaning liquid L from the ejection port 83 is stopped, and the cleaning process is ended. The cleaning liquid L accumulated in the recess 76 is removed from the drain port 82 of the annular groove 79. Thereafter, the nozzle 20 is reused for the developing process.

[0120] It is also possible that the developing liquid is ejected from the ejection port 22 toward the gap 81 in the standby position until the reuse is performed. This action uses the developing liquid that is ejected and spreads on the table 78 in contact with the front end surface 21 of the nozzle 20 to remove the cleaning liquid L adhering to the front end surface 21 of the nozzle 20, for preventing the developing liquid forming the liquid film P2 from being diluted by the cleaning liquid L when the front end surface 21 of the nozzle 20 is brought into contact with the ejected liquid film P2 immediately after the reuse.

[0121] The liquid flow of the cleaning liquid L in the cleaning process described above will be further described. As described above, in the recess 76, the drain port 82 is formed in the annular groove 79, and the cleaning liquid L supplied onto the table 78 flows toward the drain port 82 to be removed. That is, a liquid flow is formed from the table 78 toward the annular groove 79. Therefore, the cleaning liquid L that contains the dirt components adhering to the front end surface 21 of the nozzle 20 and flows to the annular groove 79 by coming into contact with the front end surface 21 of the nozzle 20 is more likely to flow directly to the drain port 82, and the cleaning liquid L can be inhibited from flowing in a manner to overcome the gravity to flow up the table 78 again. That is, by the drain port 82 provided at a position lower in height than the upper surface of the table 78 in which the rotational flow is formed, the dirt can be inhibited from adhering to the front end surface 21 of the nozzle 20 again, and the progress of the cleaning can be made fast. Further, as the arrangement of such a drain port 82, from the viewpoint of preventing the re-adhesion of the dirt components, it is preferable that the drain port 82 is not provided on the upper surface of the table 78 as in the example of the structure described above. In addition, as described above, the front end surface 21 of the nozzle 20 does not protrude beyond the upper surface of the table 78 in plan view, and by being configured as such, the re-adhesion of the dirt to the entire front end surface 21 of the nozzle 20 can be more reliably inhibited.

[0122] In addition, as described above, the ejection port 83 of the cleaning liquid is opened at the height position of the gap 81. By being opened at this height position, the flow rate of the rotational flow formed below the nozzle 20 becomes relatively high, thereby improving the cleaning property of the front end face 21 of the nozzle 20. Further, from the viewpoint of increasing the flow rate like this, the ejection port 83 can also be provided so as to be opened only at the upper side at the height position of the gap 81 and the lower side at the height position of the circular ring groove 79 (a position lower than the upper surface of the stage 78). However, from the viewpoint of preventing the reattachment of the dirt components to the nozzle 20 in a manner not to obstruct the flow of the cleaning liquid from the stage 78 to the circular ring groove 79, it is preferable to provide the ejection port 83 at a position higher than the upper surface of the stage 78 as in the structure described above (the lower end of the ejection port 83 is not at a position lower than the upper surface of the stage 78).

[0123] In the processing example described in Figure 22 , the cleaning liquid L is caused to overflow from the recess 76 during the cleaning process, but the cleaning of the side surface of the nozzle 20 can be performed by adjusting the ejection amount of the cleaning liquid L ejected from the ejection port 83 so that the liquid surface of the cleaning liquid L is at an appropriate height position within the recess 76 without overflowing.

[0124] In addition, in order to avoid the overflow of the cleaning liquid L to the outside of the recess 76, the size in the opening direction of the recess 76 can also be varied. In the example of Figure 23 , the circular ring wall 77 is curved when viewed in the longitudinal cross section, and thus the recess 76 has a structure in which the diameter is enlarged toward the opening side. With such a recess 76, the rise of the liquid surface of the cleaning liquid L on the upper side is suppressed, and thus the overflow of the cleaning liquid L can be prevented.

[0125] In the example of Figure 24 , the circular ring wall 77 is curved when viewed in the longitudinal cross section, and thus the recess 76 has a structure in which the diameter is reduced toward the opening side, and the upper end of the circular ring wall 77 is close to the side surface of the nozzle 20. Thus, the pressure loss of the cleaning liquid L in the gap between the circular ring wall 77 and the nozzle 20 is high, and thus the flow of the cleaning liquid L in this gap is prevented, the cleaning liquid L is removed from the drain port 82 within the recess 76, and thus the overflow of the cleaning liquid L can be prevented. As described above, in the case of a structure in which the processing is performed in a manner so that the cleaning liquid L does not overflow from the recess 76, the groove 73 provided outside the recess 76 in the nozzle groove B2 and the drain port 72 can also not be provided. In addition, in the case of a structure in which the processing is performed in a manner so that the cleaning liquid L overflows from the recess 76, the drain path 63 and the drain port 82 provided within the recess 76 can also not be provided.

[0126] The developing apparatus 1 in the present disclosure is not limited to the structure and operation described above. As the substrate handled by the developing apparatus 1, not only a wafer W but also an FPD (Flat Panel Display) substrate can be used. Moreover, it should be considered that the embodiments and developing method of the present disclosure are illustrative in all respects, not limiting. The above-described embodiments and developing method can be omitted, replaced, changed, and combined in various ways without departing from the appended claims and the spirit thereof.

[0127] BRIEF DESCRIPTION OF DRAWINGS

[0128] P1, P2: liquid film; W: substrate; 1: developing apparatus; 10: first nozzle; 11, 21: front end surface; 12, 22: spray outlet; 14: moving mechanism; 20: second nozzle; 41L, 41R, 41: rotary holding disc; 43: rotary mechanism.

Claims

1. A developing apparatus, characterized in that, have: The holding part holds the substrate; A first nozzle having a first outlet for developer that extends laterally in a manner that is continuous with a length covering the width of the substrate. The moving mechanism is configured to move the first nozzle in a first state during the process of spraying the developer from the first nozzle outlet onto the substrate. The first liquid contact surface forms the edge of the first nozzle, and in the first state, it contacts the liquid film of the developer formed on the substrate. The second nozzle has a second outlet for the developer, wherein the second outlet is formed such that its length in the extension direction of the first outlet is shorter than the length of the first outlet in that extension direction. A rotating mechanism that rotates the holding portion to a second state in which the substrate is rotated during the ejection of the developer from the second nozzle onto the substrate; as well as The second liquid contact surface, which forms the edge of the second nozzle, contacts the liquid film of the developer formed on the substrate in the second state.

2. The developing apparatus according to claim 1, characterized in that, The plurality of retaining parts are provided in a manner that separates them in the left-right direction. A first standby section for waiting for the first nozzle is provided between the holding sections in the left-right direction. For each of the holding parts, a second standby part for waiting for the second nozzle is provided on either the left or right side of each holding part.

3. The developing apparatus according to claim 1, characterized in that, The system includes a first standby section for activating the first nozzle and a second standby section for activating the second nozzle. The lateral movement area of ​​the first nozzle on the movement path between the first standby section and the developer spraying position on the substrate is located above the lateral movement area of ​​the second nozzle on the movement path between the second standby section and the developer spraying position on the substrate.

4. The developing apparatus according to claim 1, characterized in that, A second standby section is provided for allowing the second nozzle to wait. The second standby unit includes: The recess has its upper end on the sidewall located above the lower surface of the second nozzle during the waiting period, thereby surrounding the lower side of the second nozzle. as well as A supply port is provided in the recess to supply cleaning fluid to clean the second liquid contact surface and side surface of the second nozzle.

5. The developing apparatus according to any one of claims 1 to 4, characterized in that, A control unit is provided, which outputs a control signal to sequentially form, for the same substrate, any one of the following states: a first state in which the first liquid contact surface contacts the liquid film of the developer, and a second state in which the second liquid contact surface contacts the liquid film of the developer.

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