Switch module, switch device, driving system and vehicle

Abstract

The utility model discloses a switch module, a switch device, a driving system and a vehicle, the switch module comprises at least one reverse blocking type insulated gate bipolar transistor unit, the reverse blocking type insulated gate bipolar transistor unit comprises at least one reverse blocking type insulated gate bipolar transistor, and the reverse blocking type insulated gate bipolar transistor unit comprises at least one reverse blocking type insulated gate bipolar transistor. The at least one reverse blocking type insulated gate bipolar transistor unit is suitable for being connected with a main circuit and used for controlling the circuit connection state of the main circuit. The module provided by the utility model provides the reverse blocking type insulated gate bipolar transistor unit with reverse current blocking capability, reverse current can be blocked while current on-off is controlled, no parasitic freewheeling current diode is arranged in the unit, and meanwhile, no extra diode needs to be additionally arranged outside, so that extra conduction loss is reduced, and the service life of the module is prolonged. The number of elements and the circuit complexity are reduced, and the cost is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor, especially to a switch module, a switch device, a driving system and a vehicle. BACKGROUND

[0002] Traditional mechanical contactors are complex in design, large in size, and prone to high-temperature arc when switching high current, resulting in contact ablation or sintering, low reliability and short service life. To solve these problems, contactors based on semiconductor devices are widely used, which use MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) or IGBT (Insulated-Gate Bipolar Transistor) devices to achieve efficient power conversion and control.

[0003] However, MOSFET and ordinary IGBT have certain limitations in reverse blocking capability. Specifically, for MOSFET, MOSFET has a parasitic freewheeling diode and cannot block reverse current, so it must be connected in reverse series to achieve reverse blocking. For ordinary IGBT, to achieve reverse blocking, two IGBTs are usually connected in reverse series, and a diode is connected externally to each IGBT. Therefore, whether it is a parasitic freewheeling diode or an external diode will inevitably introduce additional conduction loss, and at the same time, the external diode will also increase the number of components in the overall circuit, thereby increasing the cost and complexity of the circuit. SUMMARY

[0004] The utility model aims to solve at least one of the technical problems existing in the prior art. Therefore, one purpose of the utility model is to provide a switch module, which provides a reverse blocking type insulated gate bipolar transistor unit with reverse blocking current capability, which can block reverse current while controlling current on-off, without parasitic freewheeling diode and without the need for additional external diode, thereby reducing additional conduction loss, reducing the number of components and circuit complexity, and reducing cost.

[0005] A second purpose of the utility model is to provide a switch device.

[0006] A third purpose of the utility model is to provide a driving system.

[0007] A fourth purpose of the utility model is to provide a vehicle.

[0008] In order to achieve the above object, the switch module of the first aspect of the present application comprises: at least one reverse blocking type insulated gate bipolar transistor unit, the reverse blocking type insulated gate bipolar transistor unit comprises at least one reverse blocking type insulated gate bipolar transistor, and the at least one reverse blocking type insulated gate bipolar transistor unit is adapted to be connected with a main circuit and used for controlling the circuit connection state of the main circuit.

[0009] The switch module according to the present application embodiment can realize the function of reverse blocking current while controlling the circuit connection state of the main circuit by using the reverse blocking type insulated gate bipolar transistor and connecting it with the main circuit. Specifically, there is no parasitic freewheeling diode between the collector and the emitter in the structure of the reverse blocking type insulated gate bipolar transistor, and in the structure of the reverse blocking type insulated gate bipolar transistor, a P+ layer is inserted between the N+ emitter region and the drift region to form a reverse blocking PN junction inside the device, and the P+ layer extends to the oxide layer at the edge, thereby enhancing the reverse voltage blocking capability by forming a complete PN junction. The PN junction can generate a high-efficiency potential barrier when reverse biased, thereby realizing the blocking of reverse current. By adjusting the doping concentration and thickness of the P+ layer, the breakdown voltage of the PN junction can be improved, thereby enhancing the reverse blocking capability of the device. Therefore, the reverse blocking type insulated gate bipolar transistor can realize the blocking of reverse current without additional diodes externally, thereby reducing the additional conduction loss, simplifying the circuit structure, reducing the number of components, and thus reducing the circuit complexity and cost.

[0010] In some embodiments, the switch module further comprises a substrate; and the switch module comprises a plurality of reverse blocking type insulated gate bipolar transistor units, and the plurality of reverse blocking type insulated gate bipolar transistor units are integrated on the substrate.

[0011] In some embodiments, the plurality of reverse blocking type insulated gate bipolar transistor units are arranged in a matrix.

[0012] In some embodiments, the plurality of reverse blocking type insulated gate bipolar transistor units are arranged along the length direction of the substrate.

[0013] In some embodiments, a part of the reverse blocking type insulated gate bipolar transistor units in the plurality of reverse blocking type insulated gate bipolar transistor units are used to realize the one-way transmission control of current on the main circuit.

[0014] In some embodiments, another part of the reverse blocking type insulated gate bipolar transistor units in the plurality of reverse blocking type insulated gate bipolar transistor units are used to realize the bidirectional transmission control of current on the main circuit.

[0015] In some embodiments, each two of the reverse blocking IGBT units in the other part are connected in reverse parallel.

[0016] In some embodiments, the other part of the reverse blocking IGBT units comprises a first reverse blocking IGBT unit and a second reverse blocking IGBT unit; the substrate further comprises a first conductive region and a second conductive region; a collector of the first reverse blocking IGBT unit is connected to the first conductive region, an emitter of the first reverse blocking IGBT unit is connected to the second conductive region, an emitter of the second reverse blocking IGBT unit is connected to the first conductive region, and a collector of the second reverse blocking IGBT unit is connected to the second conductive region.

[0017] In some embodiments, the first reverse blocking IGBT unit and the second reverse blocking IGBT unit are arranged along a length direction of the substrate; the first conductive region and the second conductive region both extend along the length direction of the substrate, and the first conductive region and the second conductive region are arranged along a width direction of the substrate; in the width direction of the substrate, the first reverse blocking IGBT unit and the second reverse blocking IGBT unit are located between the first conductive region and the second conductive region.

[0018] In some embodiments, the switch module further comprises a first connection terminal connected to the first conductive region and a second connection terminal connected to the second conductive region.

[0019] In some embodiments, the other part of the reverse blocking IGBT units further comprises a third reverse blocking IGBT unit and a fourth reverse blocking IGBT unit, and the substrate further comprises a third conductive region and a fourth conductive region; a collector of the third reverse blocking IGBT unit is connected to the third conductive region, an emitter of the third reverse blocking IGBT unit is connected to the fourth conductive region, an emitter of the fourth reverse blocking IGBT unit is connected to the third conductive region, and a collector of the fourth reverse blocking IGBT unit is connected to the fourth conductive region.

[0020] In some embodiments, the first reverse blocking insulated gate bipolar transistor unit, the second reverse blocking insulated gate bipolar transistor unit, the third reverse blocking insulated gate bipolar transistor unit, and the fourth reverse blocking insulated gate bipolar transistor unit are arranged along a length direction of the substrate; the third conductive region and the fourth conductive region each extend along the length direction of the substrate, the third conductive region is arranged along the length direction of the substrate with the first conductive region, the fourth conductive region is arranged along the length direction of the substrate with the second conductive region, the third conductive region and the fourth conductive region are arranged along a width direction of the substrate; the third reverse blocking insulated gate bipolar transistor unit and the fourth reverse blocking insulated gate bipolar transistor are located between the third conductive region and the fourth conductive region in the width direction of the substrate.

[0021] In some embodiments, the switch module further comprises: a third connection terminal connected with the third conductive region; and a fourth connection terminal connected with the fourth conductive region.

[0022] In some embodiments, the reverse blocking insulated gate bipolar transistor unit of the other part further comprises a fifth reverse blocking insulated gate bipolar transistor unit and a sixth reverse blocking insulated gate bipolar transistor unit; the substrate further comprises a fifth conductive region and a sixth conductive region; a collector of the fifth reverse blocking insulated gate bipolar transistor unit is connected with the fifth conductive region, an emitter of the fifth reverse blocking insulated gate bipolar transistor unit is connected with the sixth conductive region, an emitter of the sixth reverse blocking insulated gate bipolar transistor unit is connected with the fifth conductive region, and a collector of the sixth reverse blocking insulated gate bipolar transistor unit is connected with the sixth conductive region.

[0023] In some embodiments, the first reverse blocking insulated gate bipolar transistor unit, the second reverse blocking insulated gate bipolar transistor unit, the third reverse blocking insulated gate bipolar transistor unit, the fourth reverse blocking insulated gate bipolar transistor unit, the fifth reverse blocking insulated gate bipolar transistor unit (1235), and the sixth reverse blocking insulated gate bipolar transistor unit are arranged along a length direction of the substrate;

[0024] The fifth conductive region and the sixth conductive region both extend along the length direction of the substrate, the fifth conductive region, the third conductive region and the first conductive region are arranged along the length direction of the substrate, the sixth conductive region, the fourth conductive region and the second conductive region are arranged along the length direction of the substrate; the fifth reverse blocking type insulated gate bipolar transistor unit and the sixth reverse blocking type insulated gate bipolar transistor unit are located between the fifth conductive region and the sixth conductive region in the width direction of the substrate.

[0025] In some embodiments, the switch module further comprises: a fifth connection terminal connected with the fifth conductive region; and a sixth connection terminal connected with the sixth conductive region.

[0026] In some embodiments, the reverse blocking type insulated gate bipolar transistor unit of the other part comprises a seventh reverse blocking type insulated gate bipolar transistor unit and an eighth reverse blocking type insulated gate bipolar transistor unit; the substrate further comprises a seventh conductive region and an eighth conductive region; the collector of the seventh reverse blocking type insulated gate bipolar transistor unit is connected with the seventh conductive region, the emitter of the seventh reverse blocking type insulated gate bipolar transistor unit is connected with the eighth conductive region, the emitter of the eighth reverse blocking type insulated gate bipolar transistor unit is connected with the seventh conductive region, and the collector of the eighth reverse blocking type insulated gate bipolar transistor unit is connected with the eighth conductive region.

[0027] In some embodiments, the seventh reverse blocking type insulated gate bipolar transistor unit and the eighth reverse blocking type insulated gate bipolar transistor unit are arranged along the length direction of the substrate; the seventh conductive region and the eighth conductive region both extend along the length direction of the substrate, the seventh conductive region and the eighth conductive region are arranged along the width direction of the substrate, and the seventh reverse blocking type insulated gate bipolar transistor unit and the eighth reverse blocking type insulated gate bipolar transistor are located between the seventh conductive region and the eighth conductive region in the width direction of the substrate.

[0028] In some embodiments, the switch module further comprises: a seventh connection terminal connected with the seventh conductive region; and an eighth connection terminal connected with the eighth conductive region.

[0029] In some embodiments, the portion of the reverse blocking insulated gate bipolar transistor units further comprises a ninth reverse blocking insulated gate bipolar transistor unit; the switch module further comprises a ninth conductive region; an emitter of the ninth reverse blocking insulated gate bipolar transistor unit is connected with the ninth conductive region, and a collector of the ninth reverse blocking insulated gate bipolar transistor unit is connected with the eighth conductive region.

[0030] In some embodiments, the seventh reverse blocking insulated gate bipolar transistor unit, the eighth reverse blocking insulated gate bipolar transistor unit, and the ninth reverse blocking insulated gate bipolar transistor unit are arranged along a length direction of the substrate; the ninth conductive region extends along the length direction of the substrate; the ninth conductive region and the seventh conductive region are arranged along the length direction of the substrate; and the ninth reverse blocking insulated gate bipolar transistor unit is located between the eighth conductive region and the ninth conductive region in a width direction of the substrate.

[0031] In some embodiments, the switch module further comprises a ninth connection terminal connected with the ninth conductive region.

[0032] In some embodiments, the portion of the reverse blocking insulated gate bipolar transistor units further comprises a tenth reverse blocking insulated gate bipolar transistor unit; the switch module further comprises a tenth conductive region; a collector of the tenth reverse blocking insulated gate bipolar transistor unit is connected with the tenth conductive region, and an emitter of the tenth reverse blocking insulated gate bipolar transistor unit is connected with the eighth conductive region.

[0033] In some embodiments, the seventh reverse blocking insulated gate bipolar transistor unit, the eighth reverse blocking insulated gate bipolar transistor unit, the ninth reverse blocking insulated gate bipolar transistor unit, and the tenth reverse blocking insulated gate bipolar transistor unit are arranged along a length direction of the substrate; the tenth reverse blocking insulated gate bipolar transistor unit is located on a side of the ninth reverse blocking insulated gate bipolar transistor unit away from the eighth reverse blocking insulated gate bipolar transistor unit; the tenth conductive region extends along the length direction of the substrate; the tenth conductive region, the ninth conductive region, and the seventh conductive region are arranged along the length direction of the substrate; and the tenth reverse blocking insulated gate bipolar transistor unit is located between the eighth conductive region and the tenth conductive region in a width direction of the substrate.

[0034] In some embodiments, the switch module further comprises a tenth connection terminal connected with the tenth conductive region.

[0035] In some embodiments, the part of the reverse blocking IGBT unit further comprises an eleventh reverse blocking IGBT unit; the switch module further comprises an eleventh conductive region; a collector of the eleventh reverse blocking IGBT unit is connected with the tenth conductive region, and an emitter of the eleventh reverse blocking IGBT unit is connected with the eleventh conductive region.

[0036] In some embodiments, the seventh reverse blocking IGBT unit, the eighth reverse blocking IGBT unit, the ninth reverse blocking IGBT unit, the tenth reverse blocking IGBT unit and the eleventh reverse blocking IGBT unit are arranged along a length direction of the substrate, the eleventh reverse blocking IGBT unit is located on a side of the tenth reverse blocking IGBT unit away from the ninth reverse blocking IGBT unit; the eleventh conductive region and the tenth conductive region are arranged along a width direction of the substrate, the eleventh conductive region and the eighth conductive region are arranged along the length direction of the substrate; in the width direction of the substrate, the eleventh reverse blocking IGBT unit is located between the tenth conductive region and the eleventh conductive region.

[0037] In some embodiments, the switch module further comprises an eleventh connection terminal, the eleventh connection terminal being connected with the eleventh conductive region.

[0038] In some embodiments, a gate of the reverse blocking IGBT is a planar gate structure.

[0039] In order to achieve the above object, the switch device of the second aspect embodiment of the utility model comprises the switch module in the above embodiment.

[0040] According to the switch device, the on-off state of the reverse blocking type insulated gate bipolar transistor unit in the switch module can be controlled accurately.

[0041] In some embodiments, the switch device further comprises a control module connected with the switch module, and the control module is configured to control the on-off state of the reverse blocking type insulated gate bipolar transistor unit in the switch module.

[0042] In some embodiments, the control module comprises a plurality of first driving circuits, each of the first driving circuits is connected with the gate of a corresponding reverse blocking type insulated gate bipolar transistor unit in the switch module, and each of the first driving circuits is configured to control the on-off state of the corresponding reverse blocking type insulated gate bipolar transistor unit.

[0043] In some embodiments, the control module further comprises a control unit connected with each of the first driving circuits, and the control unit is configured to send a driving signal to each of the first driving circuits.

[0044] In some embodiments, the switch device further comprises a circuit board, and each of the first driving circuits and the control unit are arranged on the circuit board, and the first driving circuits are arranged along the length direction of the circuit board.

[0045] In some embodiments, the control module further comprises an isolated power supply arranged on the circuit board, and the isolated power supply is connected with each of the first driving circuits and configured to supply power to each of the first driving circuits.

[0046] In some embodiments, the switch device further comprises: at least one second driving circuit, located on the circuit board and connected with the control unit and the isolation power supply; and at least one single-tube packaging unit, located on the circuit board, and the gate of the at least one single-tube packaging unit is connected with the at least one second driving circuit.

[0047] In some embodiments, the at least one second driving circuit comprises two second driving circuits, and the at least one single-tube packaging unit comprises a first single-tube packaging unit and a second single-tube packaging unit, one of the second driving circuits is connected with the gate of the first single-tube packaging unit, and the other second driving circuit is connected with the gate of the second single-tube packaging unit.

[0048] To achieve the above-mentioned purpose, the drive system of the third aspect of the present application comprises the switch device of the above-mentioned embodiments.

[0049] According to the drive system of the present application, the control module in the switch device controls the on-off state of the reverse blocking type IGBT unit in the switch device according to the working mode of the vehicle, thereby effectively controlling the circuit connection state of the main circuit. In this system, the reverse blocking type IGBT unit not only can accurately adjust the current flow direction of the main circuit, but also has the ability to block reverse current. Specifically, the reverse blocking type IGBT inserts a P+ layer between its N+ emitter region and drift region, forming a reverse blocking PN junction, and the P+ layer extends to the oxide layer at the edge, thereby enhancing the reverse blocking voltage by forming a complete PN junction. This PN junction can effectively shield the electric potential when reverse biased, thereby achieving reverse current blocking. By accurately adjusting the breakdown voltage of the PN junction, the blocking ability of the reverse current is enhanced, so that the switch device can control the current flow while avoiding the influence of reverse current. In addition, since the reverse blocking type IGBT does not need an additional diode to achieve reverse current blocking, the complexity of the circuit, the number of components, and the conduction loss are reduced, the performance of the overall system is improved, and the cost is reduced.

[0050] In some embodiments, the drive system further comprises a main circuit connected with the switch device, and the switch device is used to control the reverse blocking type IGBT unit of the switch module in the switch device according to the working mode of the vehicle, so as to control the circuit connection state of the main circuit.

[0051] In some embodiments, the main circuit comprises: a battery pack comprising a first battery unit and a second battery unit, the first battery unit comprising at least one battery cell, and the second battery unit comprising at least one battery cell; a first end of the first battery unit is connected with a third connection terminal and a ninth connection terminal of the switch module, a second end of the first battery unit is connected with a first connection terminal of the switch module, a first end of the second battery unit is connected with a second connection terminal and a seventh connection terminal of the switch module, and a second end of the second battery unit is connected with a fifth connection terminal of the switch module.

[0052] In some embodiments, the main circuit further comprises: a motor, a first end of N windings of the motor is connected together as a neutral point, the neutral point is connected with an eighth connection terminal of the switch module, wherein N is greater than or equal to 1; a motor controller, the motor controller comprises a first capacitor and N bridge arms, a midpoint of the N bridge arms is respectively connected with a second end of the N windings of the motor, a first end of the N bridge arms and a first end of the first capacitor are connected to a first bus, a second end of the N bridge arms and a second end of the first capacitor are connected to a second bus, the first bus is further connected with a fourth connection terminal and an eleventh connection terminal of the switch module, and the second bus is further connected with a sixth connection terminal of the switch module.

[0053] In some embodiments, the main circuit further comprises: a pre-charge resistor, a first end of the pre-charge resistor is connected with a first end of the first single-pipe packaging unit of the switch device, a second end of the first single-pipe packaging unit is connected with a first end of the first battery unit and a third connection terminal of the switch module, and a second end of the pre-charge resistor is connected with a fourth connection terminal of the switch module and the first bus.

[0054] In some embodiments, the main circuit further comprises: a second capacitor, a first end of the second capacitor is connected with a tenth connection terminal of the switch module, a second end of the second capacitor is connected with the second bus, and both ends of the second capacitor are further adapted to be connected with a direct-current charging port.

[0055] In some embodiments, a first end of a second single-pipe packaging unit of the switch device is connected with the neutral point and an eighth connection terminal of the switch module, and a second end of the second single-pipe packaging unit is connected with a tenth connection terminal of the switch module, and the second single-pipe packaging unit is used to realize pre-charging of the second capacitor.

[0056] In order to achieve the above-mentioned purpose, the vehicle of the fourth aspect of the utility model comprises the switch module of the above-mentioned embodiment, or comprises the switch device of the above-mentioned embodiment, or comprises the drive system of the above-mentioned embodiment.

[0057] According to the vehicle of the embodiment of the utility model, through using the switch module or the switch device or the driving system described in the above embodiment, the driving system is connected with the main circuit through the switch device, and the control module in the switch device is used to control the on-off state of the reverse blocking type insulated gate bipolar transistor unit in the switch device according to the vehicle working mode, so that the circuit connection state of the main circuit is effectively controlled. In the system, the reverse blocking type insulated gate bipolar transistor unit can not only accurately adjust the current flow direction of the main circuit, but also has the ability to block reverse current. Specifically, the reverse blocking type insulated gate bipolar transistor inserts a P+ layer between its N+ emitter region and drift region, forming a reverse blocking PN junction, and the p+ layer extends to the oxide layer at the edge, thereby enhancing the reverse voltage blocking capability by forming a complete pn junction. The PN junction can effectively shield the potential when reverse biased, thereby realizing the blocking of reverse current. By accurately adjusting the breakdown voltage of the PN junction, the blocking capability of the reverse current is enhanced, so that the switch device can control the current flow while avoiding the influence of the reverse current. In addition, since the reverse blocking type insulated gate bipolar transistor does not need an additional diode to realize reverse current blocking, the additional conduction loss is reduced, the circuit structure is simplified, the number of components is reduced, thereby improving the performance of the vehicle and reducing the cost.

[0058] Additional aspects and advantages of the utility model will be partially given in the following description, some will become apparent from the following description, or be understood through the practice of the utility model. BRIEF DESCRIPTION OF DRAWINGS

[0059] The above and / or additional aspects and advantages of the utility model will become apparent and more readily appreciated from the following description of the embodiments, with reference to the following drawings, in which:

[0060] Figure 1 is the block diagram of the switch module according to one embodiment of the utility model;

[0061] Figure 2 is the structural schematic diagram of the switch module according to one embodiment of the utility model;

[0062] Figure 3 is the schematic diagram of the switch module of the battery pack side according to one embodiment of the utility model;

[0063] Figure 4 is the schematic diagram of the switch module of the electric control side according to one embodiment of the utility model;

[0064] Figure 5 is the schematic diagram of the IGBT using trench gate structure according to prior art;

[0065] Figure 6Fig. 1 is a structure diagram of a planar gate IGBT, Fig. 2 is a structure diagram of a planar gate reverse blocking type IGBT according to an embodiment of the present application;

[0066] Figure 7 Fig. 3 is a schematic diagram of a driving circuit of a reverse blocking type IGBT according to an embodiment of the present application;

[0067] Figure 8 Fig. 4 is a schematic diagram of voltage overshoot when a reverse blocking type IGBT according to an embodiment of the present application is turned off;

[0068] Figure 8 Fig. 5 is a schematic diagram of voltage variation when a reverse blocking type IGBT of a lower voltage level according to an embodiment of the present application is turned off;

[0069] Figure 9 Fig. 6 is a schematic diagram of a switch device according to an embodiment of the present application;

[0070] Figure 10 Fig. 7 is a structure schematic diagram in which all contactors in a switch module according to an embodiment of the present application are arranged in a discrete manner;

[0071] Figure 11 Fig. 8 is a block diagram of a driving system according to an embodiment of the present application;

[0072] Figure 12 Fig. 9 is a circuit schematic diagram of a driving system according to an embodiment of the present application;

[0073] Figure 13 Fig. 10 is a schematic diagram of on-off states of a plurality of reverse blocking type IGBT units when a first capacitor is pre-charged according to an embodiment of the present application;

[0074] Figure 14 Fig. 11 is a schematic diagram of a main circuit current flow direction when a first capacitor is pre-charged according to an embodiment of the present application;

[0075] Figure 15 Fig. 12 is a schematic diagram of on-off states of a plurality of reverse blocking type IGBT units when a driving system is in a motor driving working condition according to an embodiment of the present application;

[0076] Figure 16 Fig. 13 is a schematic diagram of a main circuit current flow direction when a driving system is in a motor driving working condition according to an embodiment of the present application;

[0077] Figure 17 ​​is a schematic diagram of the on-off state of multiple reverse blocking type insulated gate bipolar transistor units when the first capacitor and the second capacitor are pre-charged according to an embodiment of the present application;

[0078] Figure 18 is a schematic diagram of the main circuit current flow when the first capacitor and the second capacitor are pre-charged according to an embodiment of the present application;

[0079] Figure 19 is a schematic diagram of the on-off state of multiple reverse blocking type insulated gate bipolar transistor units when the driving system is in a direct connection charging working condition according to an embodiment of the present application;

[0080] Figure 20 is a schematic diagram of the main circuit current flow when the driving system is in a direct connection charging working condition according to an embodiment of the present application;

[0081] Figure 21 is a schematic diagram of the on-off state of multiple reverse blocking type insulated gate bipolar transistor units when the driving system is in a step-up charging working condition according to an embodiment of the present application;

[0082] Figure 22 is a schematic diagram of the main circuit current flow when the driving system is in a step-up charging working condition according to an embodiment of the present application;

[0083] Figure 23 is a schematic diagram of the on-off state of multiple reverse blocking type insulated gate bipolar transistor units when the driving system is in a step-down charging working condition according to an embodiment of the present application;

[0084] Figure 24 is a schematic diagram of the main circuit current flow when the driving system is in a step-down charging working condition according to an embodiment of the present application;

[0085] Figure 25 is a schematic diagram of the on-off state of multiple reverse blocking type insulated gate bipolar transistor units when the first battery unit charges the second battery unit according to an embodiment of the present application;

[0086] Figure 26 is a schematic diagram of the main circuit current flow when the first battery unit charges the second battery unit according to an embodiment of the present application;

[0087] Figure 27 is a schematic diagram of the on-off state of multiple reverse blocking type insulated gate bipolar transistor units when the second battery unit charges the first battery unit according to an embodiment of the present application;

[0088] Figure 28 is a schematic diagram of the main circuit current flow when the second battery unit charges the first battery unit according to an embodiment of the present application;

[0089] Figure 29 is a schematic diagram of the on-off state of multiple reverse blocking type insulated gate bipolar transistor units when an alternating current is input to the battery pack through the neutral point of the motor according to an embodiment of the present application.

[0090] Figure 30 is a schematic diagram of the current flow direction of the main circuit when an alternating current is input to the battery through the neutral point of the motor according to an embodiment of the present application.

[0091] Figure 31 is a block diagram of a vehicle according to an embodiment of the present application.

[0092] Reference signs:

[0093] Vehicle 100;

[0094] Drive system 1;

[0095] Main circuit 11; Switching device 12;

[0096] Battery pack 111; Motor 112; Motor controller 113; Pre-charge resistor 114; Second capacitor 115; Neutral point 116; Switching module 121; Control module 122; Circuit board 123; Isolation power supply 124; Second drive circuit 125; Single-tube packaging unit 126; First contactor 127; Second contactor 128; Third contactor 129; Fourth contactor 130; Fifth contactor 131; Sixth contactor 132; Seventh contactor 133;

[0097] first battery cell 1111; second battery cell 1112; first capacitor 1131; bridge arm 1132; substrate 1211; reverse blocking insulated gate bipolar transistor unit 1212; reverse blocking insulated gate bipolar transistor 1213; first reverse blocking insulated gate bipolar transistor unit 1231; second reverse blocking insulated gate bipolar transistor unit 1232; third reverse blocking insulated gate bipolar transistor unit 1233; fourth reverse blocking insulated gate bipolar transistor unit 1234; fifth reverse blocking insulated gate bipolar transistor unit 1235; sixth reverse blocking insulated gate bipolar transistor unit 1236; seventh reverse blocking insulated gate bipolar transistor unit 1237; eighth reverse blocking insulated gate bipolar transistor unit 1238; ninth reverse blocking insulated gate bipolar transistor unit 1239; tenth reverse blocking insulated gate bipolar transistor unit 1241; eleventh reverse blocking insulated gate bipolar transistor unit 1242; first conductive region 1243; second conductive region 1244; third conductive region 1245; fourth conductive region 1246; fifth conductive region 1247; sixth conductive region 1248; seventh conductive region 1249; eighth conductive region 1250; ninth conductive region 1251; tenth conductive region 1252; eleventh conductive region 1253; first connection terminal 1271; second connection terminal 1272; third connection terminal 1273; fourth connection terminal 1274; fifth connection terminal 1275; sixth connection terminal 1276; seventh connection terminal 1277; eighth connection terminal 1278; ninth connection terminal 1279; tenth connection terminal 1280; eleventh connection terminal 1281; first drive circuit 1221; control unit 1222; first single tube packaging unit 1261; second single tube packaging unit 1262. DETAILED DESCRIPTION

[0098] Embodiments of the present application are described in detail below with reference to the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary, and embodiments of the present application are described in detail below.

[0099] Reference is made below Figures 1-8 A switch module according to an embodiment of the present application is described.

[0100] Figure 1 is a block diagram of a switch module according to an embodiment of the present application, as Figure 1 indicated, the switch module 121 includes at least one reverse blocking insulated gate bipolar transistor unit 1212.

[0101] In some embodiments, the at least one reverse blocking insulated gate bipolar transistor unit 1212 can be one reverse blocking insulated gate bipolar transistor unit 1212, two reverse blocking insulated gate bipolar transistor units 1212, three reverse blocking insulated gate bipolar transistor units 1212, five reverse blocking insulated gate bipolar transistor units 1212, ten reverse blocking insulated gate bipolar transistor units 1212, or other number of reverse blocking insulated gate bipolar transistor units 1212. The specific number of reverse blocking insulated gate bipolar transistor units 1212 can be set according to the circuit topology, the power requirement of the circuit, the current carrying capacity, the voltage withstand capability of the circuit, and the like, which are not specifically limited herein.

[0102] In some embodiments, the at least one reverse blocking insulated gate bipolar transistor unit 1212 includes at least one reverse blocking insulated gate bipolar transistor 1213 (RB-IGBT). The reverse blocking insulated gate bipolar transistor 1213 is a special type of insulated gate bipolar transistor (IGBT) that has a reverse blocking capability compared to a normal IGBT. This capability is achieved by adjusting the internal structure of the IGBT (such as the introduction of a P+ layer), which allows it to block reverse current.

[0103] Specifically, in the structure of the reverse blocking insulated gate bipolar transistor 1213, by inserting a P+ layer between the N+ emitter region and the drift region, a reverse biased PN junction can be formed. When the voltage is applied in reverse, the PN junction can form an effective potential barrier, thereby preventing the flow of reverse current. That is, the PN junction can prevent current from flowing from the collector to the emitter under reverse bias conditions. The doping concentration and thickness of the P+ layer can be adjusted as needed to improve the breakdown voltage of the PN junction and improve the blocking capability of the reverse current, ensuring stable operation of the device under reverse voltage.

[0104] In some embodiments, the at least one reverse blocking insulated gate bipolar transistor 1213 can be one reverse blocking insulated gate bipolar transistor 1213, two reverse blocking insulated gate bipolar transistors 1213, three reverse blocking insulated gate bipolar transistors 1213, five reverse blocking insulated gate bipolar transistors 1213, ten reverse blocking insulated gate bipolar transistors 1213, or other number of reverse blocking insulated gate bipolar transistors 1213. The specific number of reverse blocking insulated gate bipolar transistors 1213 can be set according to the circuit topology, the power requirement of the circuit, the current carrying capacity, the voltage withstand capability of the circuit, and the like, which are not specifically limited herein.

[0105] In some embodiments, when the at least one reverse blocking insulated gate bipolar transistor unit 1212 includes a plurality of reverse blocking insulated gate bipolar transistors 1213, the plurality of reverse blocking insulated gate bipolar transistors 1213 can be connected in parallel. This parallel connection not only can share current, improve the current carrying capacity of the entire circuit, and avoid damage to a single reverse blocking insulated gate bipolar transistor 1213 due to current overload. At the same time, it can also improve the redundancy, so that if one reverse blocking insulated gate bipolar transistor 1213 fails, the other transistors can still work, ensuring the stability of the system. In addition, the parallel connection helps to more evenly distribute heat, reducing the risk of overheating of individual transistors and prolonging the service life of the device.

[0106] In some embodiments, the at least one reverse blocking insulated gate bipolar transistor unit 1212 is adapted to be connected with the main circuit 11 for controlling the circuit connection state of the main circuit 11. Specifically, when a high enough voltage is applied to the gate of the reverse blocking insulated gate bipolar transistor 1213, the reverse blocking insulated gate bipolar transistor 1213 is turned on to allow current to flow; when the gate voltage is reduced below a certain threshold, the reverse blocking insulated gate bipolar transistor 1213 is turned off to prevent current from flowing, thereby achieving precise control of the connection state of the main circuit 11.

[0107] According to the switch module 121 of the embodiment of the present application, by using the reverse blocking insulated gate bipolar transistor 1213 and connecting it with the main circuit 11, the function of blocking reverse current can be realized while controlling the circuit connection state of the main circuit 11. Specifically, the reverse blocking insulated gate bipolar transistor 1213 structure does not have a parasitic freewheeling diode between the collector and the emitter, and in the reverse blocking insulated gate bipolar transistor 1213 structure, by inserting a P+ layer between the N+ emitter region and the drift region, a reverse blocking PN junction can be formed inside the device, and the P+ layer extends to the oxide layer at the edge, thereby enhancing the reverse blocking capability by forming a complete PN junction. The PN junction can produce an efficient potential barrier when reverse biased, thereby achieving reverse current blocking. By adjusting the doping concentration and thickness of the P+ layer, the breakdown voltage of the PN junction can be improved, thereby enhancing the reverse blocking capability of the device. Therefore, the reverse blocking insulated gate bipolar transistor 1213 can achieve reverse current blocking without the need for additional diodes externally, which reduces additional conduction loss, simplifies the circuit structure, reduces the number of components, and thus reduces the complexity and cost of the circuit.

[0108] In some embodiments, as Figure 2As shown, the switch module 121 includes a substrate 1211. The substrate 1211 is an important component of the switch module 121, and its main function is to serve as a carrier, provide firm mechanical support, ensure the stability of the module structure, and realize electrical connection.

[0109] In some embodiments, the material of the substrate 1211 can be selected to have high thermal conductivity, good electrical insulation, and high mechanical strength to meet the requirements of the switch module 121. For example, the substrate 1211 can be made of ceramic materials (such as aluminum nitride, aluminum oxide), metal materials (such as copper-based copper-clad plates), composite materials, or high-heat-dissipation polymer materials.

[0110] In some embodiments, the switch module 121 includes a plurality of reverse blocking insulated gate bipolar transistor units 1212 integrated on the substrate 1211. Specifically, through specific processes or packaging techniques, the plurality of reverse blocking insulated gate bipolar transistor units 1212 can be fixed and connected on the substrate 1211. For example, the integration method can include but is not limited to welding technology, bonding technology, copper-clad connection technology, etc. This integration method not only reduces wiring complexity and improves electrical connection reliability, but also optimizes the heat dissipation performance of the switch module 121, reduces the overall volume, and makes it suitable for space-limited application scenarios such as new energy vehicle electronic control systems and industrial automation equipment.

[0111] In some embodiments, the plurality of reverse blocking insulated gate bipolar transistor units 1212 are arranged in a matrix. The matrix arrangement can refer to arranging the plurality of reverse blocking insulated gate bipolar transistor units 1212 in rows and columns on the substrate 1211. This arrangement has significant regularity and symmetry, which helps to achieve compact design and uniform performance distribution of the module. Through matrix arrangement, the area of the substrate 1211 can be fully utilized, thereby reducing the overall volume of the switch module 121. This design is particularly suitable for space-limited application scenarios, such as power modules in electric vehicles. The matrix arrangement facilitates unified planning of heat dissipation design, effectively and evenly distributes the heat sources of the plurality of reverse blocking insulated gate bipolar transistor units 1212, reduces local overheating, and improves heat dissipation efficiency. In terms of electrical performance, the matrix arrangement supports symmetrical electrical connection design, which can reduce parasitic inductance and parasitic capacitance, and reduce electromagnetic interference (EMI, Electromagnetic Interference).

[0112] In some embodiments, a matrix-arranged plurality of reverse-blocking insulated-gate bipolar transistor (IGBT) units 1212 can be used to construct a semiconductor contactor to replace a traditional mechanical contactor. Traditional mechanical contactors, which consist of an electromagnetic coil, mechanical contacts, and a housing, are complex in design and large in size, making them unsuitable for space-constrained applications such as electric vehicles. Furthermore, when switching high currents, mechanical contactors can generate high-temperature arcs due to contact disconnection, potentially leading to contact erosion or sintering, thus reducing reliability and lifespan. In contrast, semiconductor contactors composed of multiple reverse-blocking IGBT units 1212 eliminate the need for moving mechanical parts, resulting in high device integration and a compact design, significantly reducing the contactor's size. During current conduction and cutoff, the absence of mechanical contact disconnection prevents arcing, effectively solving the arcing and sintering problems of traditional mechanical contactors. Moreover, semiconductor contactors offer fast response times, meeting high-speed switching requirements and improving system reliability.

[0113] In some embodiments, such as Figure 2 As shown, multiple reverse blocking insulated gate bipolar transistor (IGBT) units 1212 are arranged along the length of the substrate 1211. This means that these IGBT units 1212 form a linear arrangement on the substrate 1211. This arrangement enables a simple and clear layout, facilitating design, manufacturing, and subsequent maintenance, and allowing for module scalability. Furthermore, the linear arrangement reduces the length of the signal transmission path, lowers parasitic inductance and resistance, thereby improving electrical performance.

[0114] In some embodiments, such as Figure 2 As shown, a portion of the multiple reverse-blocking insulated-gate bipolar transistor (IGBT) units 1212 are used to achieve unidirectional current transmission control in the main circuit 11. These IGBT units 1212 can be configured as unidirectional contactors; that is, each unidirectional contactor includes a single IGBT unit 1212. Utilizing its reverse blocking characteristic, it allows current to flow only in a specified direction in the main circuit 11, effectively preventing reverse current flow and ensuring the safe operation of the main circuit 11.

[0115] In some embodiments, such as Figure 2 As shown, for another part of the reverse blocking insulated gate bipolar transistor units 1212, it is used to realize bidirectional current transmission control on the main circuit.

[0116] Specifically, in some embodiments, for the reverse blocking type insulated gate bipolar transistor unit 1212 that realizes bidirectional current transmission control, two reverse blocking type insulated gate bipolar transistor units 1212 are connected in reverse parallel to realize bidirectional transmission control of current on the main circuit 11.

[0117] Specifically, the two reverse blocking type insulated gate bipolar transistor units 1212 in reverse parallel can be constructed as a bidirectional contactor, wherein each reverse blocking type insulated gate bipolar transistor unit 1212 has the ability to block reverse current. The collector and emitter of the two reverse blocking type insulated gate bipolar transistor units 1212 are reversely connected, so that one unit controls forward current and the other unit controls reverse current. When the current in the main circuit 11 needs to flow in the forward direction, one of the reverse blocking type insulated gate bipolar transistor units 1212 is controlled to be turned on while the other unit is kept off. When the current in the main circuit 11 needs to flow in the reverse direction, the on-off state of the two units is switched. Therefore, through this reverse parallel configuration, the switch module 121 can realize bidirectional transmission control of current in the main circuit 11, which is suitable for scenarios that require forward and reverse current switching, thereby meeting the application requirements of bidirectional transmission.

[0118] Figure 3 is a schematic view of a switch module on the side of a battery pack according to an embodiment of the present application, as shown in Figure 3 The other part of the reverse blocking type insulated gate bipolar transistor units 1212 mentioned above in the plurality of reverse blocking type insulated gate bipolar transistor units 1212 includes a first reverse blocking type insulated gate bipolar transistor unit 1231 and a second reverse blocking type insulated gate bipolar transistor unit 1232.

[0119] In some embodiments, as shown in Figure 3 The substrate 1211 further includes a first conductive area 1243 and a second conductive area 1244, which are specially designed areas on the substrate 1211 and can be composed of conductive materials (such as aluminum, copper, aluminum alloy or other conductive alloys) for connecting the electrodes of the first reverse blocking type insulated gate bipolar transistor unit 1231 and the second reverse blocking type insulated gate bipolar transistor unit 1232, ensuring that the current can effectively flow.

[0120] In some embodiments, the collector of the first reverse blocking insulated gate bipolar transistor unit 1231 is connected with the first conductive region 1243, the emitter of the first reverse blocking insulated gate bipolar transistor unit 1231 is connected with the second conductive region 1244, the emitter of the second reverse blocking insulated gate bipolar transistor unit 1232 is connected with the first conductive region 1243, and the collector of the second reverse blocking insulated gate bipolar transistor unit 1232 is connected with the second conductive region 1244. Through this reverse parallel connection mode, the first reverse blocking insulated gate bipolar transistor unit 1231 and the second reverse blocking insulated gate bipolar transistor unit 1232 can form a circuit switch configuration capable of controlling the flow of bidirectional current, and by switching the on-off state of the two units, the switching of the current direction can be realized, thereby meeting the bidirectional transmission requirement of the current in the battery pack 111 side part of the main circuit 11.

[0121] In some embodiments, as shown in FIG. 13A, the first reverse blocking insulated gate bipolar transistor unit 1231 and the second reverse blocking insulated gate bipolar transistor unit 1232 are connected in reverse parallel, for realizing the bidirectional transmission control of the current on the main circuit 11. The first reverse blocking insulated gate bipolar transistor unit 1231 and the second reverse blocking insulated gate bipolar transistor unit are arranged along the length direction of the substrate 1211. This arrangement not only improves the integration of the device, but also facilitates the optimization design of the conductive regions on the substrate 1211. Figure 3 In some embodiments, as shown in FIG. 13B, the first conductive region 1243 and the second conductive region 1244 both extend along the length direction of the substrate 1211, and the first conductive region 1243 and the second conductive region 1244 are arranged along the width direction of the substrate 1211, and the first reverse blocking insulated gate bipolar transistor unit 1231 and the second reverse blocking insulated gate bipolar transistor 1213 are located between the first conductive region 1243 and the second conductive region 1244 in the width direction of the substrate 1211.

[0122] Figure 3 In some embodiments, as shown in FIG. 13B, the first conductive region 1243 and the second conductive region 1244 both extend along the length direction of the substrate 1211, and the first conductive region 1243 and the second conductive region 1244 are arranged along the width direction of the substrate 1211, and the first reverse blocking insulated gate bipolar transistor unit 1231 and the second reverse blocking insulated gate bipolar transistor 1213 are located between the first conductive region 1243 and the second conductive region 1244 in the width direction of the substrate 1211.

[0123] In some embodiments, as shown in FIG. 13C, the switch module 121 further includes a first connection terminal 1271 and a second connection terminal 1272. The first connection terminal 1271 and the second connection terminal 1272 can be interfaces or metal pins in the switch module 121 connected with the main circuit 11, and serve to transmit current. The first connection terminal 1271 and the second connection terminal 1272 can be made of conductive metal (such as copper, aluminum, gold alloy, etc.), and the surface can be treated with a plating layer to improve conductivity and corrosion resistance. The design of the first connection terminal 1271 and the second connection terminal 1272 should ensure good electrical contact and withstand certain current load, while having good thermal conductivity to reduce the risk of overheating. Figure 3 In some embodiments, as shown in FIG. 13C, the switch module 121 further includes a first connection terminal 1271 and a second connection terminal 1272. The first connection terminal 1271 and the second connection terminal 1272 can be interfaces or metal pins in the switch module 121 connected with the main circuit 11, and serve to transmit current. The first connection terminal 1271 and the second connection terminal 1272 can be made of conductive metal (such as copper, aluminum, gold alloy, etc.), and the surface can be treated with a plating layer to improve conductivity and corrosion resistance. The design of the first connection terminal 1271 and the second connection terminal 1272 should ensure good electrical contact and withstand certain current load, while having good thermal conductivity to reduce the risk of overheating.​

[0124] In some embodiments, the first connection terminal 1271 is connected to the first conductive area 1243, and the second connection terminal 1272 is connected to the second conductive area 1244. The first connection terminal 1271 and the second connection terminal 1272 are used to transmit the current flowing through the first contactor 127 when the first contactor 127 is turned on. Specifically, when the first reverse blocking insulated-gate bipolar transistor (IGBT) unit 1231 in the first contactor 127 is turned on, the current in the main circuit 11 can be transmitted to the second conductive area 1244 through the first connection terminal 1271, the first conductive area 1243, and the first reverse blocking IGBT unit 1231, and then return to the main circuit 11 through the second connection terminal 1272, so that the current flows through the first contactor 127 in a certain direction; when the second reverse blocking IGBT unit 1232 in the first contactor 127 is turned on, the current in the main circuit 11 can be transmitted to the first conductive area 1243 through the second connection terminal 1272, the second conductive area 1244, and the second reverse blocking IGBT unit 1232, and then return to the main circuit 11 through the first connection terminal 1271, so that the current flows through the first contactor 127 in the opposite direction.

[0125] Therefore, by controlling the conduction and disconnection of the first reverse blocking insulated gate bipolar transistor unit 1231 and the second reverse blocking insulated gate bipolar transistor unit 1232 in the first contactor 127, the first contactor 127 can adjust the current flow direction in the main circuit 11, ensuring that the system can transmit current stably and efficiently in different operating modes.

[0126] In some embodiments, such as Figure 3 As shown, another part of the reverse blocking insulated gate bipolar transistor (IGBT) units 1212 may also include a third reverse blocking IGBT unit 1233 and a fourth reverse blocking IGBT unit 1234.

[0127] In some embodiments, such as Figure 3 As shown, the substrate 1211 also includes a third conductive region 1245 and a fourth conductive region 1246. The third conductive region 1245 and the fourth conductive region 1246 are specially designed areas on the substrate 1211, which can be made of conductive materials (such as aluminum, copper, aluminum alloy or other conductive alloys) and are used to connect the electrodes of the third reverse blocking insulated gate bipolar transistor unit 1233 and the fourth reverse blocking insulated gate bipolar transistor unit 1234 to ensure that the current can flow effectively.

[0128] In some embodiments, the collector of the third reverse blocking insulated gate bipolar transistor unit 1233 is connected with the third conductive region 1245, the emitter of the third reverse blocking insulated gate bipolar transistor unit 1233 is connected with the fourth conductive region 1246, the emitter of the fourth reverse blocking insulated gate bipolar transistor unit 1234 is connected with the third conductive region 1245, and the collector of the fourth reverse blocking insulated gate bipolar transistor unit 1234 is connected with the fourth conductive region 1246. Through this reverse parallel connection mode, the third reverse blocking insulated gate bipolar transistor unit 1233 and the fourth reverse blocking insulated gate bipolar transistor unit 1234 can form a circuit switch configuration capable of controlling the flow of bidirectional current, and by switching the on-off state of the two units, the switching of the current direction can be realized, thereby meeting the bidirectional transmission requirement of the current in the battery pack 111 side part of the main circuit 11.

[0129] In some embodiments, as shown in FIG. 12, the third conductive region 1245 and the fourth conductive region 1246 both extend along the length direction of the substrate 1211, the third conductive region 1245 is arranged along the length direction of the substrate with the first conductive region 1243, the fourth conductive region 1246 is arranged along the length direction of the substrate with the second conductive region 1244, the third conductive region 1245 and the fourth conductive region 1246 are arranged along the width direction of the substrate 1211, and the third reverse blocking insulated gate bipolar transistor unit 1233 and the fourth reverse blocking insulated gate bipolar transistor 1213 are located between the third conductive region 1245 and the fourth conductive region 1246 in the width direction of the substrate 1211. Figure 3 In some embodiments, as shown in FIG. 12, the third conductive region 1245 and the fourth conductive region 1246 both extend along the length direction of the substrate 1211, the third conductive region 1245 is arranged along the length direction of the substrate with the first conductive region 1243, the fourth conductive region 1246 is arranged along the length direction of the substrate with the second conductive region 1244, the third conductive region 1245 and the fourth conductive region 1246 are arranged along the width direction of the substrate 1211, and the third reverse blocking insulated gate bipolar transistor unit 1233 and the fourth reverse blocking insulated gate bipolar transistor 1213 are located between the third conductive region 1245 and the fourth conductive region 1246 in the width direction of the substrate 1211.

[0130] Figure 3 In some embodiments, as shown in FIG. 12, the third conductive region 1245 and the fourth conductive region 1246 both extend along the length direction of the substrate 1211, the third conductive region 1245 is arranged along the length direction of the substrate with the first conductive region 1243, the fourth conductive region 1246 is arranged along the length direction of the substrate with the second conductive region 1244, the third conductive region 1245 and the fourth conductive region 1246 are arranged along the width direction of the substrate 1211, and the third reverse blocking insulated gate bipolar transistor unit 1233 and the fourth reverse blocking insulated gate bipolar transistor 1213 are located between the third conductive region 1245 and the fourth conductive region 1246 in the width direction of the substrate 1211.

[0131] In some embodiments, as shown in FIG. 12, the third conductive region 1245 and the fourth conductive region 1246 both extend along the length direction of the substrate 1211, the third conductive region 1245 is arranged along the length direction of the substrate with the first conductive region 1243, the fourth conductive region 1246 is arranged along the length direction of the substrate with the second conductive region 1244, the third conductive region 1245 and the fourth conductive region 1246 are arranged along the width direction of the substrate 1211, and the third reverse blocking insulated gate bipolar transistor unit 1233 and the fourth reverse blocking insulated gate bipolar transistor 1213 are located between the third conductive region 1245 and the fourth conductive region 1246 in the width direction of the substrate 1211. Figure 3 ​As shown, the switch module 121 further includes a third connection terminal 1273 and a fourth connection terminal 1274. The third connection terminal 1273 and the fourth connection terminal 1274 can be interfaces or metal pins of the switch module 121 connected to the main circuit 11, and serve to transmit current. The third connection terminal 1273 and the fourth connection terminal 1274 can be made of conductive metal (such as copper, aluminum, gold alloy, etc.), and the surface can be treated with a plating layer to improve conductivity and corrosion resistance. The design of the third connection terminal 1273 and the fourth connection terminal 1274 should ensure good electrical contact and withstand a certain current load, while having good thermal conductivity to reduce the risk of overheating.

[0132] In some embodiments, the third connection terminal 1273 is connected to the third conductive region 1245, and the fourth connection terminal 1274 is connected to the fourth conductive region 1246. The third connection terminal 1273 and the fourth connection terminal 1274 are used to transmit current flowing through the second contactor 128 when the second contactor 128 is turned on. Specifically, when the third reverse blocking IGBT unit 1233 in the second contactor 128 is turned on, the current of the main circuit 11 can be transmitted to the fourth conductive region 1246 through the third connection terminal 1273, the third conductive region 1245, the third reverse blocking IGBT unit 1233, and then returned to the main circuit 11 through the fourth connection terminal 1274, so as to realize the current flowing through the second contactor 128 in a certain direction; when the fourth reverse blocking IGBT unit 1234 in the second contactor 128 is turned on, the current of the main circuit 11 can be transmitted to the third conductive region 1245 through the fourth connection terminal 1274, the fourth conductive region 1246, the fourth reverse blocking IGBT unit 1234, and then returned to the main circuit 11 through the third connection terminal 1273, so as to realize the current flowing through the second contactor 128 in the opposite direction of the certain direction.

[0133] Therefore, by controlling the turn-on and turn-off of the third reverse blocking IGBT unit 1233 and the fourth reverse blocking IGBT unit 1234 in the second contactor 128, the second contactor 128 can adjust the current flow direction in the main circuit 11, and ensure that the system can stably and efficiently transmit current in different working modes.

[0134] In some embodiments, as shown in FIG. 12, the switch module 121 further includes a third connection terminal 1273 and a fourth connection terminal 1274. The third connection terminal 1273 and the fourth connection terminal 1274 can be interfaces or metal pins of the switch module 121 connected to the main circuit 11, and serve to transmit current. The third connection terminal 1273 and the fourth connection terminal 1274 can be made of conductive metal (such as copper, aluminum, gold alloy, etc.), and the surface can be treated with a plating layer to improve conductivity and corrosion resistance. The design of the third connection terminal 1273 and the fourth connection terminal 1274 should ensure good electrical contact and withstand a certain current load, while having good thermal conductivity to reduce the risk of overheating. Figure 3 As shown, another part of the plurality of reverse blocking IGBT units 1212 can further include a fifth reverse blocking IGBT unit 1235 and a sixth reverse blocking IGBT unit 1236.

[0135] In some embodiments, as shown in FIG. 12, the switch module 121 further includes a third connection terminal 1273 and a fourth connection terminal 1274. The third connection terminal 1273 and the fourth connection terminal 1274 can be interfaces or metal pins of the switch module 121 connected to the main circuit 11, and serve to transmit current. The third connection terminal 1273 and the fourth connection terminal 1274 can be made of conductive metal (such as copper, aluminum, gold alloy, etc.), and the surface can be treated with a plating layer to improve conductivity and corrosion resistance. The design of the third connection terminal 1273 and the fourth connection terminal 1274 should ensure good electrical contact and withstand a certain current load, while having good thermal conductivity to reduce the risk of overheating. Figure 3As shown, the substrate 1211 further includes a fifth conductive region 1247 and a sixth conductive region 1248, which are specially designed regions on the substrate 1211 and can be made of conductive materials (such as aluminum, copper, aluminum alloy, or other conductive alloys) for connecting the electrodes of the fifth reverse blocking IGBT unit 1235 and the sixth reverse blocking IGBT unit 1236, ensuring that the current can effectively flow.

[0136] In some embodiments, the collector of the fifth reverse blocking IGBT unit 1235 is connected to the fifth conductive region 1247, the emitter of the fifth reverse blocking IGBT unit 1235 is connected to the sixth conductive region 1248, the emitter of the sixth reverse blocking IGBT unit 1236 is connected to the fifth conductive region 1247, and the collector of the sixth reverse blocking IGBT unit 1236 is connected to the sixth conductive region 1248. Through this reverse parallel connection mode, the fifth reverse blocking IGBT unit 1235 and the sixth reverse blocking IGBT unit 1236 can form a circuit switch configuration capable of controlling bidirectional current flow, and by switching the on-off state of the two units, the switching of the current direction can be realized, thereby meeting the bidirectional transmission requirement of the current in the battery pack 111 side part of the main circuit 11.

[0137] In the embodiments, as shown in Figure 3 The fifth reverse blocking IGBT unit 1235 and the sixth reverse blocking IGBT unit 1236 are connected in reverse parallel to realize the bidirectional transmission control of the current on the main circuit 11. The first reverse blocking IGBT unit 1231, the second reverse blocking IGBT unit 1232, the third reverse blocking IGBT unit 1233, the fourth reverse blocking IGBT unit, the fifth reverse blocking IGBT unit 1235, and the sixth reverse blocking IGBT unit are arranged along the length direction of the substrate 1211.

[0138] In some embodiments, as shown in Figure 3As shown, the fifth conductive region 1247 and the sixth conductive region 1248 both extend along the length direction of the substrate 1211, the fifth conductive region 1247 and the sixth conductive region 1248 are arranged along the width direction of the substrate 1211, the fifth conductive region 1247, the third conductive region 1245 and the first conductive region 1243 are arranged along the length direction of the substrate 1211, the sixth conductive region 1248, the fourth conductive region 1246 and the second conductive region 1244 are arranged along the length direction of the substrate 1211. The fifth reverse blocking IGBT unit 1235 and the sixth reverse blocking IGBT unit 1236 are located between the fifth conductive region 1247 and the sixth conductive region 1248 in the width direction of the substrate 1211.

[0139] In some embodiments, as shown, Figure 3 As shown, the switch module 121 further includes a fifth connection terminal 1275 and a sixth connection terminal 1276. The fifth connection terminal 1275 and the sixth connection terminal 1276 can be interfaces or metal pins in the switch module 121 connected to the main circuit 11, which serve to transmit current. The fifth connection terminal 1275 and the sixth connection terminal 1276 can be made of conductive metal (such as copper, aluminum, gold alloy, etc.), and the surface can be treated with a plating layer to improve conductivity and corrosion resistance. The design of the fifth connection terminal 1275 and the sixth connection terminal 1276 should ensure good electrical contact and withstand a certain current load, while having good thermal conductivity to reduce the risk of overheating.

[0140] In some embodiments, the fifth connection terminal 1275 is connected to the fifth conductive region 1247, and the sixth connection terminal 1276 is connected to the sixth conductive region 1248, and the fifth connection terminal 1275 and the sixth connection terminal 1276 are used to transmit the current flowing through the third contactor 129 when the third contactor 129 is turned on. Specifically, when the fifth reverse blocking IGBT unit 1235 in the third contactor 129 is turned on, the current of the main circuit 11 can be transmitted to the sixth conductive region 1248 through the fifth connection terminal 1275, the fifth conductive region 1247, the fifth reverse blocking IGBT unit 1235, and then returned to the main circuit 11 through the sixth connection terminal 1276, so as to realize the current flowing through the third contactor 129 in a certain direction; when the sixth reverse blocking IGBT unit 1236 in the third contactor 129 is turned on, the current of the main circuit 11 can be transmitted to the fifth conductive region 1247 through the sixth connection terminal 1276, the sixth conductive region 1248, the sixth reverse blocking IGBT unit 1236, and then returned to the main circuit 11 through the fifth connection terminal 1275, so as to realize the current flowing through the third contactor 129 in the opposite direction of a certain direction.

[0141] Therefore, by controlling the on and off of the fifth reverse blocking type IGBT unit 1235 and the sixth reverse blocking type IGBT unit 1236 in the third contactor 129, the third contactor 129 can adjust the current flow direction in the main circuit 11, ensuring that the system can stably and efficiently transmit current in different working modes.

[0142] Figure 3 is a schematic diagram of a switch module of an electric control side according to an embodiment of the present application, as Figure 4 shown, another part of the plurality of reverse blocking type IGBT units 1212 can include a seventh reverse blocking type IGBT unit 1237 and an eighth reverse blocking type IGBT unit 1238.

[0143] In some embodiments, as Figure 4 shown, the substrate 1211 further includes a seventh conductive region 1249 and an eighth conductive region 1250, which are specially designed regions on the substrate 1211 and can be composed of conductive materials (such as aluminum, copper, aluminum alloy or other conductive alloys) for connecting the electrodes of the seventh reverse blocking type IGBT unit 1237 and the eighth reverse blocking type IGBT unit 1238, ensuring that the current can flow effectively.

[0144] In some embodiments, the collector of the seventh reverse blocking type IGBT unit 1237 is connected to the seventh conductive region 1249, the emitter of the seventh reverse blocking type IGBT unit 1237 is connected to the eighth conductive region 1250, the emitter of the eighth reverse blocking type IGBT unit 1238 is connected to the seventh conductive region 1249, and the collector of the eighth reverse blocking type IGBT unit 1238 is connected to the eighth conductive region 1250. Through this reverse parallel connection mode, the seventh reverse blocking type IGBT unit 1237 and the eighth reverse blocking type IGBT unit 1238 can form a circuit switch configuration that can control bidirectional current flow, and by switching the on and off states of the two units, the switching of the current direction can be realized, thereby meeting the bidirectional transmission demand of the current in the electric control side part of the main circuit 11.

[0145] In the embodiment, as Figure 4As shown, the seventh reverse blocking insulated-gate bipolar transistor (IGBT) unit 1237 and the eighth reverse blocking IGBT unit 1238 are connected in reverse parallel to realize bidirectional current transmission control on the main circuit 11. The seventh reverse blocking IGBT unit 1237 and the eighth reverse blocking IGBT unit are arranged along the length of the substrate 1211. This arrangement not only improves the integration of the device, but also facilitates the optimized design of the conductive area on the substrate 1211.

[0146] In some embodiments, such as Figure 4 As shown, the seventh conductive region 1249 and the eighth conductive region 1250 both extend along the length direction of the substrate 1211, and the seventh conductive region 1249 and the eighth conductive region 1250 are arranged along the width direction of the substrate 1211. In the width direction of the substrate 1211, the seventh reverse blocking insulated gate bipolar transistor unit 1237 and the eighth reverse blocking insulated gate bipolar transistor 1213 are located between the seventh conductive region 1249 and the eighth conductive region 1250.

[0147] In some embodiments, such as Figure 4 As shown, the switch module 121 also includes a seventh connection terminal 1277 and an eighth connection terminal 1278. The seventh connection terminal 1277 and the eighth connection terminal 1278 can be interfaces or metal pins in the switch module 121 that connect to the main circuit 11, serving to transmit current. The seventh connection terminal 1277 and the eighth connection terminal 1278 can be made of conductive metal (such as copper, aluminum, gold alloy, etc.), and their surfaces can be plated to improve conductivity and corrosion resistance. The design of the seventh connection terminal 1277 and the eighth connection terminal 1278 should ensure good electrical contact and withstand a certain current load, while also having good thermal conductivity to reduce the risk of overheating.

[0148] In some embodiments, the seventh connection terminal 1277 is connected to the seventh conductive area 1249, and the eighth connection terminal 1278 is connected to the eighth conductive area 1250. The seventh connection terminal 1277 and the eighth connection terminal 1278 are used to transmit current flowing through the fourth contactor 130 when the fourth contactor 130 is turned on. Specifically, when the seventh reverse blocking insulated-gate bipolar transistor unit 1237 in the fourth contactor 130 is turned on, the current in the main circuit 11 can be transmitted to the eighth conductive area 1250 through the seventh connection terminal 1277, the seventh conductive area 1249, and the seventh reverse blocking insulated-gate bipolar transistor unit 1237, and then return to the main circuit 11 through the eighth connection terminal 1278, so that the current flows through the fourth contactor 130 in a certain direction; when the eighth reverse blocking insulated-gate bipolar transistor unit 1238 in the fourth contactor 130 is turned on, the current in the main circuit 11 can be transmitted to the seventh conductive area 1249 through the eighth connection terminal 1278, the eighth conductive area 1250, and the eighth reverse blocking insulated-gate bipolar transistor unit 1238, and then return to the main circuit 11 through the seventh connection terminal 1277, so that the current flows through the fourth contactor 130 in the opposite direction.

[0149] Therefore, by controlling the conduction and disconnection of the seventh reverse blocking insulated gate bipolar transistor unit 1237 and the eighth reverse blocking insulated gate bipolar transistor unit 1238 in the fourth contactor 130, the fourth contactor 130 can adjust the current flow direction in the main circuit 11, ensuring that the system can transmit current stably and efficiently in different operating modes.

[0150] In some embodiments, such as Figure 4 As shown, a portion of the reverse blocking insulated gate bipolar transistor (IGBT) units 1212 may include a ninth reverse blocking IGBT unit 1239.

[0151] In some embodiments, such as Figure 4 As shown, the switch module 121 also includes a ninth conductive region 1251. The ninth conductive region 1251 is a specially designed area on the substrate 1211, which can be made of conductive material (such as aluminum, copper, aluminum alloy or other conductive alloy) and is used to connect the electrodes of the ninth reverse blocking insulated gate bipolar transistor unit 1239 to ensure that the current can flow effectively.

[0152] In some embodiments, the emitter of the ninth reverse blocking insulated gate bipolar transistor unit 1239 is connected with the ninth conductive region 1251, and the collector of the ninth reverse blocking insulated gate bipolar transistor unit 1239 is connected with the eighth conductive region 1250. The ninth reverse blocking insulated gate bipolar transistor unit 1239 can form a circuit switch configuration capable of controlling unidirectional current flow, and the ninth reverse blocking insulated gate bipolar transistor unit 1239 utilizes its reverse blocking characteristic to allow current to flow in a specified direction in the main circuit 11 and effectively prevent reverse current from passing through, thereby meeting the current unidirectional transmission requirement of the electrically controlled side part area in the main circuit 11.

[0153] In some embodiments, as shown in FIG. 13, the ninth conductive region 1251 extends along the length direction of the substrate 1211, and the ninth conductive region 1251 and the seventh conductive region 1249 are arranged along the length direction of the substrate 1211, and the ninth reverse blocking insulated gate bipolar transistor 1213 is located between the eighth conductive region 1250 and the ninth conductive region 1251 in the width direction of the substrate 1211. Figure 4 In some embodiments, as shown in FIG. 13, the ninth conductive region 1251 extends along the length direction of the substrate 1211, and the ninth conductive region 1251 and the seventh conductive region 1249 are arranged along the length direction of the substrate 1211, and the ninth reverse blocking insulated gate bipolar transistor 1213 is located between the eighth conductive region 1250 and the ninth conductive region 1251 in the width direction of the substrate 1211.

[0154] Figure 4 In some embodiments, as shown in FIG. 13, the ninth conductive region 1251 extends along the length direction of the substrate 1211, and the ninth conductive region 1251 and the seventh conductive region 1249 are arranged along the length direction of the substrate 1211, and the ninth reverse blocking insulated gate bipolar transistor 1213 is located between the eighth conductive region 1250 and the ninth conductive region 1251 in the width direction of the substrate 1211.

[0155] In some embodiments, as shown in FIG. 13, the ninth conductive region 1251 extends along the length direction of the substrate 1211, and the ninth conductive region 1251 and the seventh conductive region 1249 are arranged along the length direction of the substrate 1211, and the ninth reverse blocking insulated gate bipolar transistor 1213 is located between the eighth conductive region 1250 and the ninth conductive region 1251 in the width direction of the substrate 1211. Figure 4 In some embodiments, as shown in FIG. 13, the switch module 121 further includes a ninth connection terminal 1279. The ninth connection terminal 1279 can be an interface or a metal pin in the switch module 121 connected with the main circuit 11, and functions to transmit current. The ninth connection terminal 1279 can be made of conductive metal (such as copper, aluminum, gold alloy, etc.), and the surface can be treated with a plating layer to improve conductivity and corrosion resistance. The design of the ninth connection terminal 1279 should ensure good electrical contact and withstand a certain current load, while having good thermal conductivity to reduce the risk of overheating.

[0156] ​In some embodiments, the ninth connection terminal 1279 is connected with the ninth conductive region 1251, and the ninth connection terminal 1279 and the eighth connection terminal 1278 are used to transmit the current flowing through the fifth contactor 131 when the fifth contactor 131 is turned on. Specifically, when the ninth reverse blocking IGBT unit 1239 in the fifth contactor 131 is turned on, the current of the main circuit 11 can be transmitted to the ninth conductive region 1251 through the eighth connection terminal 1278, the eighth conductive region 1250, and the eighth reverse blocking IGBT unit 1238, and returned to the main circuit 11 through the ninth connection terminal 1279, so as to achieve the unidirectional transmission control of the current flowing through the fifth contactor 131 in the specified direction.

[0157] In some embodiments, as shown in FIG. 12B, the reverse blocking IGBT units 1212 in the plurality of reverse blocking IGBT units 1212 can further include a tenth reverse blocking IGBT unit 1241. Figure 4

[0158] In some embodiments, as shown in FIG. 12B, the switch module 121 further includes a tenth conductive region 1252, which is a specially designed region on the substrate 1211 and can be composed of a conductive material (such as aluminum, copper, aluminum alloy, or other conductive alloy) for connecting the electrode of the tenth reverse blocking IGBT unit 1241 to ensure the effective flow of current. Figure 4

[0159] In some embodiments, the collector of the tenth reverse blocking IGBT unit 1241 is connected with the tenth conductive region 1252, and the emitter of the tenth reverse blocking IGBT unit 1241 is connected with the eighth conductive region 1250. The tenth reverse blocking IGBT unit 1241 can form a circuit switch configuration capable of controlling the unidirectional current flow. The tenth reverse blocking IGBT unit 1241 utilizes its reverse blocking property to allow the current to flow in the specified direction in the main circuit 11 and effectively prevent the reverse current from passing through, thereby meeting the current unidirectional transmission requirement of the electrically controlled side part region in the main circuit 11.

[0160] In some embodiments, as shown in FIG. 12B, the reverse blocking IGBT units 1212 in the plurality of reverse blocking IGBT units 1212 can further include a tenth reverse blocking IGBT unit 1241. Figure 4 ​​As shown, the tenth reverse blocking insulated gate bipolar transistor unit 1241 is used to achieve unidirectional transmission control of the current on the main circuit 11. The seventh reverse blocking insulated gate bipolar transistor unit 1237, the eighth reverse blocking insulated gate bipolar transistor unit 1238, the ninth reverse blocking insulated gate bipolar transistor unit 1239, and the tenth reverse blocking insulated gate bipolar transistor unit 1241 are arranged along the length direction of the substrate 1211, and the tenth reverse blocking insulated gate bipolar transistor unit 1241 is located on the side of the ninth reverse blocking insulated gate bipolar transistor unit 1239 away from the eighth reverse blocking insulated gate bipolar transistor unit 1238.

[0161] In some embodiments, the tenth conductive region 1252 extends along the length direction of the substrate 1211, and the tenth conductive region 1252, the ninth conductive region 1251, and the seventh conductive region 1249 are arranged along the length direction of the substrate 1211, and the tenth reverse blocking insulated gate bipolar transistor unit 1241 is located between the eighth conductive region 1250 and the tenth conductive region 1252 in the width direction of the substrate 1211. By controlling the tenth reverse blocking insulated gate bipolar transistor unit 1241, the current flow between the tenth conductive region 1252 and the eighth conductive region 1250 can be controlled.

[0162] In some embodiments, as shown, Figure 4 The switch module 121 further includes a tenth connection terminal 1280. The tenth connection terminal 1280 can be an interface or a metal pin in the switch module 121 connected to the main circuit 11, which serves to transmit current. The tenth connection terminal 1280 can be made of conductive metal (such as copper, aluminum, gold alloy, etc.), and the surface can be treated with a plating layer to improve conductivity and corrosion resistance. The design of the tenth connection terminal 1280 should ensure good electrical contact and withstand a certain current load, while having good thermal conductivity to reduce the risk of overheating.

[0163] In some embodiments, the tenth connection terminal 1280 is connected to the tenth conductive region 1252, and the tenth connection terminal 1280 and the eighth connection terminal 1278 are used to transmit the current connected to the seventh contactor 133 when the sixth contactor 132 is turned on. Specifically, when the tenth reverse blocking insulated gate bipolar transistor unit 1241 in the sixth contactor 132 is turned on, the current of the main circuit 11 can be transmitted to the eighth conductive region 1250 through the tenth connection terminal 1280, the tenth conductive region 1252, the tenth reverse blocking insulated gate bipolar transistor unit 1241, and returned to the main circuit 11 through the eighth connection terminal 1278, so as to achieve that the current can only flow through the sixth contactor 132 in a specified direction, thereby achieving unidirectional transmission control of the current.

[0164] In some embodiments, as shown, Figure 4As shown, a portion of the reverse blocking insulated gate bipolar transistor (IGBT) units 1212 may further include an eleventh reverse blocking IGBT unit 1242.

[0165] In some embodiments, such as Figure 4 As shown, the switch module 121 also includes an eleventh conductive region 1253, which is a specially designed area on the substrate 1211. It can be made of conductive material (such as aluminum, copper, aluminum alloy or other conductive alloy) and is used to connect the electrodes of the eleventh reverse blocking insulated gate bipolar transistor unit 1242 to ensure that the current can flow effectively.

[0166] In some embodiments, the collector of the eleventh reverse-blocking insulated-gate bipolar transistor (IGBT) unit 1242 is connected to the tenth conductive region 1252, and the emitter of the eleventh reverse-blocking IGBT unit 1242 is connected to the eleventh conductive region 1253. The eleventh reverse-blocking IGBT unit 1242 can form a circuit switch configuration capable of controlling unidirectional current flow. Utilizing its reverse blocking characteristic, the eleventh reverse-blocking IGBT unit 1242 allows current to flow only in a specified direction in the main circuit 11, effectively preventing reverse current from passing through, thereby meeting the unidirectional current transmission requirements of the electronically controlled portion of the main circuit 11.

[0167] In the embodiments, such as Figure 4 As shown, the seventh reverse-blocking insulated-gate bipolar transistor (IGBT) unit 1237, the eighth reverse-blocking IGBT unit 1238, the ninth reverse-blocking IGBT unit 1239, the tenth reverse-blocking IGBT unit 1241, and the eleventh reverse-blocking IGBT unit 1242 are arranged along the length of the substrate 1211. The eleventh reverse-blocking IGBT unit 1242 is used to realize unidirectional current transmission control on the main circuit 11. The eleventh reverse-blocking IGBT unit 1242 is located on the side of the tenth reverse-blocking IGBT unit 1241 away from the ninth reverse-blocking IGBT unit 1239.

[0168] In some embodiments, the eleventh conductive region 1253 and the tenth conductive region 1252 are arranged along the width direction of the substrate 1211, and the eleventh conductive region 1253 and the eighth conductive region 1250 are arranged along the length direction of the substrate 1211. In the width direction of the substrate 1211, the eleventh reverse blocking insulated gate bipolar transistor 1213 is located between the tenth conductive region 1252 and the eleventh conductive region 1253. By controlling the eleventh reverse blocking insulated gate bipolar transistor unit 1242, the flow of current between the eleventh conductive region 1253 and the tenth conductive region 1252 can be controlled.

[0169] In some embodiments, such as Figure 4 As shown, the switch module 121 also includes an eleventh connection terminal 1281. The eleventh connection terminal 1281 can be an interface or metal pin in the switch module 121 that connects to the main circuit 11, serving to transmit current. The eleventh connection terminal 1281 can be made of a conductive metal (such as copper, aluminum, gold alloy, etc.), and its surface can be plated to improve conductivity and corrosion resistance. The design of the eleventh connection terminal 1281 should ensure good electrical contact and withstand a certain current load, while also having good thermal conductivity to reduce the risk of overheating.

[0170] In some embodiments, the eleventh connection terminal 1281 is connected to the eleventh conductive region 1253. The eleventh connection terminal 1281 and the tenth connection terminal 1280 are used to transmit the current flowing through the seventh contactor 133 when the seventh contactor 133 is turned on. Specifically, when the eleventh reverse blocking insulated gate bipolar transistor unit 1242 in the seventh contactor 133 is turned on, the current in the main circuit 11 can be transmitted to the eleventh conductive region 1253 through the tenth connection terminal 1280, the tenth conductive region 1252, and the tenth reverse blocking insulated gate bipolar transistor unit 1241, and then return to the main circuit 11 through the eleventh connection terminal 1281, so that the current can only flow through the seventh contactor 133 in a specified direction, thereby realizing unidirectional current transmission control.

[0171] Understandable, Figure 3 and Figure 4 The arrangement, location, and number of units of the reverse blocking insulated gate bipolar crystal are only examples and can be set according to requirements or actual conditions.

[0172] In some embodiments, the gate of the reverse blocking insulated-gate bipolar transistor 1213 is a planar gate structure. Specifically, existing insulated-gate bipolar transistors (IGBTs) typically operate at high switching frequencies. To improve switching speed and reduce switching losses, such as... Figure 5As shown, the IGBT adopts a trench gate to replace the traditional planar gate structure, and can effectively improve the switching performance by reducing the parasitic capacitance and on-resistance, but the manufacturing process is relatively complex, increasing the cost. For the reverse blocking type insulated gate bipolar transistor 1213 of the utility model, it does not need to work frequently in a high switching frequency state, that is, the reverse blocking type insulated gate bipolar transistor 1213 can maintain a relatively long on or off state. Therefore, the reverse blocking type insulated gate bipolar transistor 1213 of the utility model can adopt a planar gate structure, and compared with the trench gate structure, the manufacturing process is relatively simple, the cost is relatively low, and the application in the semiconductor contactor scene is not affected.

[0173] In some embodiments, as Figure 6 shown, Figure 6 (a) is a structure diagram of a planar gate ordinary IGBT, Figure 6 (b) is a structure diagram of a planar gate reverse blocking type insulated gate bipolar transistor (RB-IGBT) of the utility model. Compared with the ordinary IGBT, the P+ layer in the reverse blocking type insulated gate bipolar transistor 1213 extends to the oxide layer along the side of the N-layer, and the reverse voltage resistance capability is enhanced by forming a complete PN junction, thereby realizing the blocking of reverse current.

[0174] In some embodiments, when the ordinary insulated gate bipolar transistor (IGBT) is turned off, overvoltage may be generated between the collector and the emitter. This phenomenon is usually caused by the turn-off speed, and the faster the turn-off speed, the higher the overvoltage generated. Therefore, in order to avoid device damage caused by voltage overshoot, an IGBT with higher voltage resistance needs to be selected, thereby increasing the use cost. In contrast, the reverse blocking type insulated gate bipolar transistor 1213 in the utility model differs from the ordinary IGBT in working mode, and works in a normally open or normally closed state, rather than a high-frequency switching state, which is in sharp contrast to the common high switching frequency working mode of IGBT in an inverter. Since high-speed switching operation is not required frequently, the turn-on and turn-off speed can be appropriately reduced, thereby effectively suppressing the overvoltage problem when turned off. Through this design, the reverse blocking type IGBT with a lower voltage level can be selected without the need to additionally increase the device voltage resistance level, thereby reducing the use cost.

[0175] Specifically, as Figure 7 shown, in the driving circuit of the reverse blocking type insulated gate bipolar transistor of the utility model, the gate resistance and the gate capacitance should be selected to avoid the voltage overshoot phenomenon as shown in Figure 8 (a), and should achieve the voltage waveform as shown in (b). Figure 8 voltage waveform.​Figure 8 The overvoltage shown in (a) is the voltage induced on the power loop parasitic inductance due to the current change , which can be calculated as follows:

[0176]

[0177] where, is the induced voltage on the power loop parasitic inductance due to the collector current rapid change, is the power loop parasitic inductance, is the rate of change of collector current with time.

[0178] According to the IGBT characteristics, the rate of change of collector current with time is controlled by the transconductance controlled by the gate voltage , which can be calculated as follows:

[0179]

[0180] where, is the transconductance, is the rate of change of gate voltage with time.

[0181] Further, the gate turn-off voltage can be approximated as:

[0182]

[0183] where, is the gate turn-off voltage, is the steady-state value of the gate drive supply voltage, τ is the time constant of the gate drive, and t is the turn-off time.

[0184] Further, the time constant τ of the gate drive is determined by the product of the resistance and the capacitance, which can be calculated as follows:

[0185]

[0186] where, is the gate resistance, is the gate capacitance, is the internal resistance of the gate of the reverse blocking insulated gate bipolar transistor, is the parasitic capacitance between the gate and the emitter.

[0187] Further, from all the above formulas, we have:

[0188]

[0189] ​​​​​​​ ;

[0190] wherein, is the maximum overvoltage.

[0191] Therefore, in order to adopt a reverse blocking type IGBT with a lower voltage level to reduce the cost, the maximum overvoltage ≤5%VDC, VDC is the battery pack voltage. It should be noted that 5% of the battery pack voltage is a preferred value, not a limiting value, and a smaller and appropriate overvoltage value can be selected according to specific applications.

[0192] The switch device according to the embodiments of the present application will be described below with reference to the accompanying drawings. Figure 9 The switch device according to the embodiments of the present application will be described below with reference to the accompanying drawings.

[0193] Figure 9 is a schematic diagram of a switch device according to an embodiment of the present application, as shown in Figure 9 The switch device 12 includes the switch module 121 described in the above embodiments.

[0194] In some embodiments, the switch module 121 includes at least one reverse blocking type IGBT unit 1212, and the reverse blocking type IGBT unit 1212 includes at least one reverse blocking type IGBT. That is, in the present application, by adopting the switch module 121 of the above embodiments, the function of the contactor is realized by using the reverse blocking type IGBT unit 1212 to realize the unidirectional or bidirectional transmission control of the current on the main circuit.

[0195] As shown in Figure 9 The plurality of reverse blocking type IGBT units 1212 in the switch module 121 can realize a plurality of unidirectional or bidirectional controlled contactors connected on the main circuit, such as the first contactor 127, the second contactor 128, the third contactor 129, the fourth contactor 130, the fifth contactor 131, the sixth contactor 132 and the seventh contactor 133, and these reverse blocking type IGBT units 1212, i.e. contactors, can be packaged in the form of a power module to realize compact structure and higher integration.

[0196] According to the switch device 12 of the embodiment of the utility model, the control module 122 is connected with the switch module 121, and the on-off state of the reverse blocking type insulated gate bipolar transistor unit 1212 in the switch module 121 can realize the accurate control of the current of the main circuit 11. Among them, the reverse blocking type insulated gate bipolar transistor 1213 can also realize the function of reverse blocking current. Specifically, the reverse blocking type insulated gate bipolar transistor 1213 structure does not have the parasitic freewheeling diode between the collector and the emitter, and in the reverse blocking type insulated gate bipolar transistor 1213 structure, by inserting the P+ layer between the n+ emission area and the drift area, a reverse blocking pn junction can be formed inside the device, and the P+ layer extends to the oxide layer at the edge, and the complete PN junction is formed to enhance the reverse voltage resistance, and the PN junction can produce an efficient potential barrier when reverse biased, thereby realizing the blocking of reverse current, and by adjusting the doping concentration and thickness of the P+ layer, the breakdown voltage of the PN junction can be improved, thereby enhancing the reverse blocking capability of the device. Therefore, the reverse blocking type insulated gate bipolar transistor 1213 can realize the blocking of reverse current without additional diode externally, reduce the additional conduction loss, simplify the circuit structure, reduce the number of components, thereby reducing the circuit complexity and cost.

[0197] The switch device 12 of the embodiment of the utility model further comprises a control module 122.

[0198] The control module 122 is connected with the switch module 121, and the control module 122 is used for controlling the on-off state of the reverse blocking type insulated gate bipolar transistor unit 1212 in the switch module 121. Specifically, the control module 122 is used for generating and sending a control signal, such as a pulse width modulation signal (PWM, Pulse Width Modulation) or a level signal. The signal is transmitted to the gate of the reverse blocking type insulated gate bipolar transistor unit 1212, and by adjusting the gate voltage, the on-off state of the reverse blocking type insulated gate bipolar transistor unit 1212 can be controlled. In this way, the control module 122 can accurately adjust the current flow and realize the accurate control of the main circuit 11.

[0199] In some embodiments, as shown in Figure 9 The control module 122 comprises a plurality of first drive circuits 1221. Among them, the first drive circuit 1221 can be a circuit capable of providing a drive signal for the gate of the reverse blocking type insulated gate bipolar transistor unit 1212. Its main function is to generate appropriate gate voltage signals to control the reverse blocking type insulated gate bipolar transistor unit 1212 to switch between the on and off states.

[0200] In some embodiments, the plurality of first driving circuits 1221 are connected to the gates of the plurality of reverse blocking IGBT units 1212 of the switch module 121, for controlling the on-off of the corresponding reverse blocking IGBT units 1212. This design allows the switch device 12 to independently control different reverse blocking IGBT units 1212, thereby achieving precise control of the current flow direction and meeting the requirements of different circuit topologies and modes.

[0201] In some embodiments, as shown in Figure 9 The control module 122 further includes a control unit 1222. The control unit 1222 can be a microcontroller unit (MCU), a digital signal processor (DSP), a field-programmable gate array (FPGA), or other special-purpose control chip.

[0202] In some embodiments, the control unit 1222 is connected to the plurality of first driving circuits 1221 respectively, for sending driving signals to the first driving circuits 1221. Specifically, the control unit 1222 dynamically generates control signals, such as pulse width modulation signals or fixed level signals, for driving the first driving circuits 1221 through a pre-set control logic or external input signals. These control signals can be designed with different duty cycles, frequencies, or amplitudes according to system operation requirements, to control the first driving circuits 1221 to provide appropriate gate voltages for the reverse blocking IGBT units 1212. Through this design, the control unit 1222 can precisely control the on-off state of the reverse blocking IGBT units 1212.

[0203] In some embodiments, as shown in Figure 9 The switch device 12 further includes a circuit board 123. The circuit board 123 is the carrier of the entire control module 122, providing mechanical support and electrical connection for various electronic components. The circuit board 123 can be a printed circuit board (PCB) with wiring layers, ground layers, and power supply layers, allowing efficient integration of the first driving circuits 1221 and the control unit 1222.

[0204] In some embodiments, the plurality of first driving circuits 1221 and the control unit 1222 are arranged along the length direction of the circuit board 123. This arrangement is beneficial for optimizing space utilization, simplifying wiring design, reducing the length of signal transmission paths, and reducing parasitic inductance and parasitic capacitance effects during signal transmission, thereby improving circuit performance.

[0205] In some embodiments, as shown in Figure 9 The control module 122 further comprises an isolated power supply 124. The isolated power supply 124 is a power supply device with electrical isolation function, which can realize electrical isolation between the input and output through a transformer, a capacitive coupler or an optical coupler, etc. It provides independent and stable power supply for the plurality of first driving circuits 1221, ensuring the reliable operation of the first driving circuits 1221.

[0206] In some embodiments, the isolated power supply 124 is located on the circuit board 123. The isolated power supply 124 can be connected to the plurality of first driving circuits 1221 through a low-impedance wiring or a filtering network, for providing power supply for each first driving circuit 1221. Each first driving circuit 1221 obtains stable DC voltage from the isolated power supply 124, for driving the gate of the reverse blocking IGBT unit 1212.

[0207] In some embodiments, the switch device 12 further comprises at least one second driving circuit 125 and at least one single-tube packaging unit 126. The second driving circuit 125 can be a driving circuit for controlling the single-tube packaging unit 126. The at least one second driving circuit 125 is located on the circuit board 123 and connected to the control unit 1222 and the isolated power supply 124. The at least one second driving circuit 125 receives the logic control signal, such as the pulse width modulation signal (PWM signal), sent by the control unit 1222, and converts it into a driving signal suitable for the gate of the single-tube packaging unit 126, ensuring that the single-tube packaging unit 126 can be stably turned on or turned off.

[0208] In some embodiments, the single-tube packaging unit 126 adopts an independent packaging form and contains a reverse blocking IGBT 1213. The at least one single-tube packaging unit 126 is located on the circuit board 123, and the gate of the at least one single-tube packaging unit 126 is connected to the at least one second driving circuit 125 correspondingly, so as to realize the on-off of the reverse blocking IGBT 1213 by receiving the gate driving signal from the second driving circuit 125, thereby controlling the current flow direction in the main circuit 11.

[0209] In some embodiments, as shown in Figure 10 The at least one second driving circuit 125 comprises two second driving circuits 125, and the at least one single-tube packaging unit 126 comprises a first single-tube packaging unit 1261 and a second single-tube packaging unit 1262. One second driving circuit 125 is connected to the gate of the first single-tube packaging unit 1261, and the other second driving circuit 125 is connected to the gate of the second single-tube packaging unit 1262. Each second driving circuit 125 is responsible for providing a gate driving signal for the corresponding single-tube packaging unit 126, ensuring the independent control ability of the two single-tube packaging units 126.

[0210] In some embodiments, the first single-pipe packaging unit 1261 and the second single-pipe packaging unit 1262 each contain a reverse blocking IGBT 1213. This single-pipe packaging design is particularly suitable for small power applications, such as capacitor pre-charging circuits. In the capacitor pre-charging scenario, the reverse blocking IGBT 1213 can control the on-off of the current by controlling the gate voltage, thereby stably controlling the capacitor charging process.

[0211] In some embodiments, the use of single-pipe packaging units 126 can reduce costs, and the integration of the first single-pipe packaging unit 1261 and the second single-pipe packaging unit 1262 onto the circuit board 123 of the switch device 12 can reduce the overall volume of the switch device 12, improving space utilization.

[0212] In some embodiments, as shown in Figures 11-30 When all contactors in the switch module 121 are arranged in a discrete manner, the control unit 1222 is far away from the driving circuit, which can result in an excessively long wire harness. The excessively long wire harness not only affects the signal transmission quality, but also can cause signal delay and noise interference. Therefore, the circuit board 123 needs to be designed with a more complex filter circuit to ensure signal quality, which increases the area of the circuit board 123 and the cost of components.

[0213] In contrast, in the embodiments of the present application, when the contactors in the switch module 121 are arranged in a matrix manner, the control unit 1222 is closer to the driving circuit, thereby improving the signal transmission quality and control stability. In addition, since the signal transmission path is shorter, the need for complex filter circuits is reduced, thereby reducing the increase in the area of the circuit board 123 and the cost of components.

[0214] In addition, in the embodiments of the present application, the isolation power supply 124 can use the same flyback power supply, and multiple transformers on the secondary side of the flyback power supply can be used to output multiple isolated voltages to provide power for each driving circuit. This design has a significant advantage over discrete arrangements, as in discrete arrangements, each driving circuit requires an independent isolation power supply 124 to power it. Therefore, the present application improves the overall integration of the switch device 12 by using a matrix arrangement, and effectively reduces the cost.

[0215] The following describes a driving system according to an embodiment of the present application. Figure 11

[0216] Figure 11 is a block diagram of a driving system according to an embodiment of the present application, as shown in Figure 12 The driving system 1 includes the switch device 12 described in the above embodiments. ​

[0217] In some embodiments, the drive system 1 further comprises a main circuit 11.

[0218] In embodiments, the main circuit 11 serves as the core circuit of the drive system 1, mainly used for driving various devices of the vehicle, such as electric motors and loads, etc. In electric vehicle applications, the main circuit 11 can involve key components such as power drive circuits, energy management circuits, and battery management systems, etc. Through the connection with the switching device 12, the main circuit 11 can be dynamically adjusted according to the working state of the vehicle, so as to realize circuit control in different working modes.

[0219] In some embodiments, the switching device 12 plays an important role in switching the circuit in the drive system 1. According to the working mode of the vehicle, it can adjust the connection state of the main circuit 11 by controlling the flow direction or disconnection of the current. Therefore, the switching device 12 can support various working conditions of the electric vehicle drive system 1, such as motor 112 driving, direct charging, step-up charging, step-down charging, and battery self-heating working conditions, etc.

[0220] In some embodiments, the switching device 12 is connected with the main circuit 11, and the switching device 12 is used to control the reverse blocking type insulated gate bipolar transistor unit 1212 in the switching module 121 of the switching device 12 according to the working mode of the vehicle, so as to control the circuit connection state of the main circuit 11.

[0221] According to the drive system 1 of the embodiments of the present application, the drive system 1 is connected with the main circuit 11 through the switching device 12, and the on-off state of the reverse blocking type insulated gate bipolar transistor unit 1212 in the switching device 12 is controlled according to the working mode of the vehicle by using the control module 122 in the switching device 12, so as to effectively control the circuit connection state of the main circuit 11. In this system, the reverse blocking type insulated gate bipolar transistor unit 1212 not only can accurately adjust the current flow direction of the main circuit 11, but also has the ability to block reverse current. Specifically, the reverse blocking type insulated gate bipolar transistor 1213 forms a reverse blocking PN junction by inserting a P+ layer between its N+ emitter region and drift region, and the P+ layer extends to the oxide layer at the edge, thereby forming a complete PN junction to enhance the reverse voltage blocking capability. This PN junction can effectively shield the electric potential when it is reverse biased, thereby realizing the blocking of reverse current. By accurately adjusting the breakdown voltage of the PN junction, the blocking capability of the reverse current is enhanced, so that the switching device 12 can control the current flow while avoiding the influence of the reverse current. In addition, since the reverse blocking type insulated gate bipolar transistor 1213 does not need an additional diode to realize the blocking of reverse current, the complexity of the circuit, the number of components, and the conduction loss are reduced, the performance of the overall system is improved, and the cost is reduced.

[0222] In some embodiments, as Figure 12As shown, the main circuit 11 includes a battery pack 111. The battery pack 111 is the energy source for the drive system 1. The battery pack 111 includes a first battery unit 1111 and a second battery unit 1112, which can be connected in series. The first battery unit 1111 and the second battery unit 1112 can be monitored and managed by a battery management system (BMS) to ensure the performance of the battery units.

[0223] In some embodiments, the first battery unit 1111 includes at least one battery cell, and the second battery unit 1112 includes at least one battery cell. The at least one battery cell can be one, two, three, five, ten, or other numbers of battery cells. The specific number of battery cells can be set according to voltage requirements, capacity requirements, power requirements, battery management system design requirements, safety and redundancy requirements, economic costs, etc.

[0224] In some embodiments, the first end of the first battery unit 1111 is connected to the third connection terminal 1273 and the ninth connection terminal 1279 of the switch module 121, the second end of the first battery unit 1111 is connected to the first connection terminal 1271 of the switch module 121, the first end of the second battery unit 1112 is connected to the second connection terminal 1272 and the seventh connection terminal 1277 of the switch module 121, and the second end of the second battery unit 1112 is connected to the fifth connection terminal 1275 of the switch module 121.

[0225] In some embodiments, the main circuit 11 further includes a motor 112 and a motor controller 113. The main function of the motor 112 is to convert electrical energy into mechanical energy to drive the operation of a vehicle or other mechanical equipment. For example, in an electric vehicle, the motor 112, as a core driving component, directly affects the vehicle's acceleration, hill-climbing, and braking performance. The operation of the motor 112 generates a magnetic field through its internal windings, which, in conjunction with the motor controller 113 and the switching module 121, enable precise current control.

[0226] In some embodiments, the first ends of the N windings of the motor 112 are connected together to form a neutral point 116, which is connected to the eighth connection terminal 1278 of the switch module 121, wherein N≥1.

[0227] In some embodiments, the motor controller 113 is configured to adjust the operating state of the motor 112 to achieve different working modes. The motor controller 113 includes a first capacitor 1131 and N bridge arms 1132. The first capacitor 1131 is mainly used for storing and releasing electric energy. When the first capacitor 1131 is in a charging state, it can absorb electric energy from the DC charging port output to store energy. When energy needs to be released, the first capacitor 1131 can release the stored electric energy to supply the battery pack 111. Through the energy storage and release process of the first capacitor 1131, the fluctuation of the current can be balanced, and the sudden change of the current can be slowed down, thereby improving the stability of the driving system 1.

[0228] In some embodiments, the middle points of the N bridge arms 1132 are respectively connected to the second ends of the N windings of the motor 112, the first ends of the N bridge arms 1132 and the first end of the first capacitor 1131 are connected to the first bus, the second ends of the N bridge arms 1132 and the second end of the first capacitor 1131 are connected to the second bus, the first bus is further connected to the fourth connection terminal 1274 and the eleventh connection terminal 1281 of the switch module 121, and the second bus is further connected to the sixth connection terminal 1276 of the switch module 121.

[0229] In some embodiments, as shown in FIG. 13, the N bridge arms 1132 can include three bridge arms 1132, and each bridge arm 1132 can be composed of an upper bridge arm 1132 and a lower bridge arm 1132. The upper bridge arm 1132 can include a power switch tube (such as MOSFET, IGBT, etc.), and the lower bridge arm 1132 can include a power switch tube (such as MOSFET, IGBT, etc.). By adjusting the on-off state of these power switch tubes, the current flow and the precise control of the motor 112 can be achieved. Figure 12 In some embodiments, as shown in FIG. 13, the main circuit 11 further includes a pre-charge resistor 114. The pre-charge resistor 114 is used to limit the current during the pre-charge process, so that the current in the circuit rises smoothly, preventing voltage spikes caused by instantaneous large current from damaging the devices in the circuit.

[0230] Figures 13-30 In some embodiments, the first end of the pre-charge resistor 114 is connected to the first end of the first single-tube packaging unit 1261 of the switch device 12, the second end of the first single-tube packaging unit 1261 is connected to the first end of the first battery unit 1111 and the third connection terminal 1273 of the switch module 121, and the second end of the pre-charge resistor 114 is connected to the fourth connection terminal 1274 of the switch module 121 and the first bus.

[0231] In some embodiments, the first end of the pre-charge resistor 114 is connected to the first end of the first single-tube packaging unit 1261 of the switch device 12, the second end of the first single-tube packaging unit 1261 is connected to the first end of the first battery unit 1111 and the third connection terminal 1273 of the switch module 121, and the second end of the pre-charge resistor 114 is connected to the fourth connection terminal 1274 of the switch module 121 and the first bus.

[0232] ​In some embodiments, the main circuit 11 further comprises a second capacitor 115. The main function of the second capacitor 115 is to filter and store energy, which is used to stabilize the voltage of the circuit, especially to balance the current when the DC charging port is connected. Specifically, during the charging process, the second capacitor 115 acts as an energy storage device to absorb the electrical energy from the DC charging port and smooth the current when the current fluctuates greatly. Through its energy storage function, the second capacitor 115 effectively alleviates the fluctuation of the current during the charging process, reduces the sudden change of the current, and thus protects the circuit components from damage.

[0233] In some embodiments, the first end of the second capacitor 115 is connected to the tenth connection terminal 1280 of the switch module 121, and the second end of the second capacitor 115 is connected to the second bus. The two ends of the second capacitor 115 are also adapted to be connected to the DC charging port.

[0234] In some embodiments, the first end of the second single-pipe packaging unit 1262 of the switch device 12 is connected to the neutral point 116 and the eighth connection terminal 1278 of the switch module 121, and the second end of the second single-pipe packaging unit 1262 is connected to the tenth connection terminal 1280 of the switch module 121. The second single-pipe packaging unit 1262 is used to realize the pre-charging of the second capacitor 115. By controlling the second single-pipe packaging unit 1262, the voltage of the second capacitor 115 can be smoothly raised until it is consistent with the voltage of the DC charging port, which helps the system to avoid instability caused by excessive voltage difference during the starting stage.

[0235] In some embodiments, based on the driving system 1 described in the above embodiments, by controlling the on-off of the reverse blocking type insulated gate bipolar transistor unit 1212 in each contactor and the on-off of the power switch tube of the multiple bridge arms 1132 in the motor controller 113, various working conditions of the driving system 1 can be realized, such as the motor 112 driving condition, the direct connection charging condition, the step-up charging condition, the step-down charging condition, and the battery self-heating condition.

[0236] The current flow direction of the driving system 1 in different working conditions and the on-off state of the reverse blocking type insulated gate bipolar transistor unit 1212 in different contactors in different working conditions will be described below with reference to the accompanying drawings. Figure 13 The current flow direction of the driving system 1 in different working conditions and the on-off state of the reverse blocking type insulated gate bipolar transistor unit 1212 in different contactors in different working conditions will be described below with reference to the accompanying drawings.

[0237] First, for the motor 112 driving condition, Figure 14 is a schematic diagram of the on-off state of multiple reverse blocking type insulated gate bipolar transistor units when pre-charging the first capacitor according to an embodiment of the present application. Figure 15 is a schematic diagram of the current flow direction of the main circuit when pre-charging the first capacitor according to an embodiment of the present application. Figure 16is the on-off state schematic diagram of multiple reverse blocking type IGBT units when the driving system is in the motor driving working condition according to an embodiment of the utility model. Figure 13 is the schematic diagram of main circuit current flow when the driving system is in the motor driving working condition according to an embodiment of the utility model.

[0238] As shown in Figure 14 and Figure 15 , under the motor 112 driving working condition, by turning on the second reverse blocking type IGBT unit 1232 in the first contactor 127, the first single tube packaging unit 1261 and the sixth reverse blocking type IGBT unit 1236 in the third contactor 129, the first battery unit 1111, the pre-charging resistor 114, the first capacitor 1131 and the second battery unit 1112 can form a loop, so as to realize the pre-charging of the first capacitor 1131. During the pre-charging process, the voltage across the first capacitor 1131 gradually rises, and when the pre-charging is completed, the voltage across the first capacitor 1131 is the same as the voltage across the battery pack 111.

[0239] Further, as shown in Figure 16 and Figure 17 , after the pre-charging of the first capacitor 1131 is completed, the motor 112 is started to be driven. By turning off the first single tube packaging unit 1261 and turning on the third reverse blocking type IGBT unit 1233 in the second contactor 128, the battery pack 111, the motor controller 113 and the motor 112 can form a loop, so as to realize that the motor controller 113 works in the driving mode to drive the motor 112 to work.

[0240] Secondly, for the direct charging working condition, Figure 18 is the on-off state schematic diagram of multiple reverse blocking type IGBT units when the first capacitor and the second capacitor are pre-charged according to an embodiment of the utility model. Figure 19 is the schematic diagram of main circuit current flow when the first capacitor and the second capacitor are pre-charged according to an embodiment of the utility model. Figure 20 is the on-off state schematic diagram of multiple reverse blocking type IGBT units when the driving system is in the direct charging working condition according to an embodiment of the utility model. Figure 17 is the schematic diagram of main circuit current flow when the driving system is in the direct charging working condition according to an embodiment of the utility model.

[0241] As shown in Figure 18 and Figure 19As shown, in the direct connection charging condition, by turning on the second reverse blocking type IGBT unit 1232 in the first contactor 127, the first single tube packaging unit 1261 and the sixth reverse blocking type IGBT unit 1236 in the third contactor 129, a loop is formed by the first battery unit 1111, the pre-charging resistor 114, the first capacitor 1131 and the second battery unit 1112, so as to realize the pre-charging of the first capacitor 1131. During the pre-charging process, the voltage across the first capacitor 1131 gradually rises, and when the pre-charging is completed, the voltage across the first capacitor 1131 is the same as the voltage across the battery pack 111.

[0242] Further, by turning on the second single tube packaging unit 1262 and the power switch tube of the upper bridge arm 1132 in the motor controller 113, a loop is formed by the first battery unit 1111, the pre-charging resistor 114, the power switch tube of the upper bridge arm 1132 in the motor controller 113, the motor 112, the second capacitor 115 and the second battery unit 1112, so as to realize the charging of the second capacitor 115 by the motor controller 113. When the voltage across the second capacitor 115 is consistent with the voltage of the direct current charging port, the pre-charging of the second capacitor 115 is completed, and the motor controller 113 stops working.

[0243] Further, as shown in Figure 20 and Figure 21 the first single tube packaging unit 1261, the second single tube packaging unit 1262, the second reverse blocking type IGBT unit 1232 in the first contactor 127, the sixth reverse blocking type IGBT unit 1236 in the third contactor 129 are turned off, and the first reverse blocking type IGBT unit 1231 in the first contactor 127, the fourth reverse blocking type IGBT unit 1234 in the second contactor 128, the fifth reverse blocking type IGBT unit 1235 in the third contactor 129 and the eleventh reverse blocking type IGBT unit 1242 in the seventh contactor 133 are turned on, so that a loop is formed by the positive electrode of the direct current charging port, the first battery unit 1111, the second battery unit 1112 and the negative electrode of the direct current charging port, thereby realizing the direct current charging of the battery pack 111 by the power supply equipment through the direct current charging port.

[0244] Third, for the boost charging condition, Figure 22 is a schematic diagram of the on-off state of a plurality of reverse blocking type IGBT units when the driving system according to an embodiment of the present application is in the boost charging condition. Figure 17 is a schematic diagram of the current flow direction of the main circuit when the driving system according to an embodiment of the present application is in the boost charging condition.

[0245] AsFigure 18 and Figure 21 As shown in FIG. 12, in the boost charging mode, the first battery unit 1111, the pre-charge resistor 114, the first capacitor 1131, and the second battery unit 1112 form a loop by turning on the second reverse blocking IGBT unit 1232 in the first contactor 127, the first single tube packaging unit 1261, and the sixth reverse blocking IGBT unit 1236 in the third contactor 129, so as to realize pre-charging of the first capacitor 1131. During the pre-charging process, the voltage across the first capacitor 1131 gradually increases, and when the pre-charging is completed, the voltage across the first capacitor 1131 is the same as the voltage across the battery pack 111.

[0246] Further, the first battery unit 1111, the pre-charge resistor 114, the power switch tube of the upper bridge arm 1132 in the motor controller 113, the motor 112, the second capacitor 115, and the second battery unit 1112 form a loop by turning on the second single tube packaging unit 1262 and the power switch tube of the upper bridge arm 1132 in the motor controller 113, so as to realize charging of the second capacitor 115 by the motor controller 113. When the voltage across the second capacitor 115 is consistent with the voltage of the DC charging port, the pre-charging of the second capacitor 115 is completed, and the motor controller 113 stops working.

[0247] Further, as shown in FIG. 13, the first single tube packaging unit 1261, the second single tube packaging unit 1262, the second reverse blocking IGBT unit 1232 in the first contactor 127, and the sixth reverse blocking IGBT unit 1236 in the third contactor 129 are turned off, and the tenth reverse blocking IGBT unit 1241 in the sixth contactor 132, the first reverse blocking IGBT unit 1231 in the first contactor 127, the fourth reverse blocking IGBT unit 1234 in the second contactor 128, and the fifth reverse blocking IGBT unit 1235 in the third contactor 129 are turned on, so that the motor controller 113 works in the boost charging mode (boost converter). Figure 22 Figure 23 Further, the power switch tubes of the upper bridge arm 1132 and the lower bridge arm 1132 of the motor controller 113 are controlled to be synchronously turned on and turned off, respectively, so that the power supply device can charge the coil of the motor 112 through the DC charging port. After the charging of the coil of the motor 112 is completed, the power switch tubes of the upper bridge arm 1132 and the lower bridge arm 1132 of the motor controller 113 are controlled to be synchronously turned off and turned on, respectively, so that the power supply device and the coil of the motor 112 simultaneously charge the battery pack 111 and the first capacitor 1131.

[0248] Further, the power switch tubes of the upper bridge arm 1132 and the lower bridge arm 1132 of the motor controller 113 are controlled to be synchronously turned on and turned off, respectively, so that the power supply device can charge the coil of the motor 112 through the DC charging port. After the charging of the coil of the motor 112 is completed, the power switch tubes of the upper bridge arm 1132 and the lower bridge arm 1132 of the motor controller 113 are controlled to be synchronously turned off and turned on, respectively, so that the power supply device and the coil of the motor 112 simultaneously charge the battery pack 111 and the first capacitor 1131.​

[0249] Further, after the coil of the motor 112 releases the electric energy, the power switch tube of the lower bridge arm 1132 of the motor controller 113 is synchronously turned on, and the power switch tube of the upper bridge arm 1132 is synchronously turned off, at this time, the first capacitor 1131 can continue to charge the battery pack 111, and the power supply device can re-charge the coil of the motor 112 through the direct current charging port. By continuously repeating the above steps, the purpose of boosting the battery pack 111 can be achieved.

[0250] Fourth, for the step-down charging condition (i.e. the step-up charging condition), Figure 24 is a schematic diagram of the on-off state of a plurality of reverse blocking type insulated gate bipolar transistor units when the driving system according to an embodiment of the utility model is in a step-down charging condition. Figure 17 is a schematic diagram of the current flow direction of the main circuit when the driving system according to an embodiment of the utility model is in a step-down charging condition.

[0251] As shown in Figure 18 and Figure 23 , in the step-up charging condition, by turning on the second reverse blocking type insulated gate bipolar transistor unit 1232 in the first contactor 127, the first single-tube packaging unit 1261 and the sixth reverse blocking type insulated gate bipolar transistor unit 1236 in the third contactor 129, the first battery unit 1111, the pre-charging resistor 114, the first capacitor 1131 and the second battery unit 1112 can form a loop, thereby realizing pre-charging of the first capacitor 1131. During the pre-charging process, the voltage across the first capacitor 1131 gradually rises, and when the pre-charging is completed, the voltage across the first capacitor 1131 is the same as the voltage across the battery pack 111.

[0252] Further, by turning on the second single-tube packaging unit 1262 and the power switch tube of the upper bridge arm 1132 of the motor controller 113, the first battery unit 1111, the pre-charging resistor 114, the power switch tube of the upper bridge arm 1132 of the motor controller 113, the motor 112, the second capacitor 115 and the second battery unit 1112 can form a loop, thereby realizing charging of the second capacitor 115 by the motor controller 113. When the voltage across the second capacitor 115 is consistent with the voltage of the direct current charging port, the pre-charging of the second capacitor 115 is completed, and the motor controller 113 stops working.

[0253] Further, as shown in Figure 24 and Figure 25As shown, the first single-tube packaging unit 1261, the second single-tube packaging unit 1262, the second reverse blocking IGBT unit 1232 in the first contactor 127, the sixth reverse blocking IGBT unit 1236 in the third contactor 129 are turned off, the eleventh reverse blocking IGBT unit 1242 in the seventh contactor 133 is turned on, the ninth reverse blocking IGBT unit 1239 in the fifth contactor 131, the first reverse blocking IGBT unit 1231 in the first contactor 127, the fifth reverse blocking IGBT unit 1235 in the third contactor 129 are turned on, and the motor controller 113 enters the Buck charging mode.

[0254] Further, the power switch tubes of the upper bridge arm 1132 of the motor controller 113 are synchronously turned on, and the power switch tubes of the lower bridge arm 1132 are synchronously turned off, so that the power supply equipment charges the coil of the motor 112 through the DC charging port and simultaneously charges the battery pack 111.

[0255] Further, after the coil of the motor 112 is fully charged, the power switch tubes of the upper bridge arm 1132 of the motor controller 113 are synchronously turned off, and the power switch tubes of the lower bridge arm 1132 are synchronously turned on, so that the coil of the motor 112 charges the battery pack 111. At this time, since the tenth reverse blocking IGBT unit 1241, the second single-tube packaging unit 1262 and the power switch tubes of the upper bridge arm 1132 of the motor controller 113 are all turned off, the power supply equipment cannot charge the battery pack 111 through the DC charging port.

[0256] Further, after the coil of the motor 112 is fully charged, the power switch tubes of the upper bridge arm 1132 of the motor controller 113 are synchronously turned off, and the power switch tubes of the lower bridge arm 1132 are synchronously turned on, so that the coil of the motor 112 charges the battery pack 111. At this time, since the tenth reverse blocking IGBT unit 1241, the second single-tube packaging unit 1262 and the power switch tubes of the upper bridge arm 1132 of the motor controller 113 are all turned off, the power supply equipment cannot charge the battery pack 111 through the DC charging port.

[0257] Fifth, for the self-heating mode, Figure 26 is a schematic diagram of the on-off state of the plurality of reverse blocking IGBT units when the first battery unit charges the second battery unit according to an embodiment of the present application. Figure 27 is a schematic diagram of the current flow direction of the main circuit when the first battery unit charges the second battery unit according to an embodiment of the present application. Figure 28 is a schematic diagram of the on-off state of the plurality of reverse blocking IGBT units when the second battery unit charges the first battery unit according to an embodiment of the present application.Figure 13 is a schematic diagram of the main circuit current flow when the second battery unit charges the first battery unit according to an embodiment of the present application.

[0258] As shown in Figure 14 and Figure 25 , by turning on the second reverse blocking IGBT unit 1232 in the first contactor 127, the first single tube packaging unit 1261 and the sixth reverse blocking IGBT unit 1236 in the third contactor 129, the first battery unit 1111, the pre-charging resistor 114, the first capacitor 1131 and the second battery unit 1112 form a loop, thereby realizing pre-charging of the first capacitor 1131. During the pre-charging process, the voltage across the first capacitor 1131 gradually rises, and when the pre-charging is completed, the voltage across the first capacitor 1131 is the same as the voltage across the battery pack 111.

[0259] Further, as shown in Figure 26 and Figure 27 , after the pre-charging of the first capacitor 1131 is completed, the first single tube packaging unit 1261 and the sixth reverse blocking IGBT unit 1236 in the third contactor 129 are turned off, and the fifth reverse blocking IGBT unit 1235 in the third contactor 129, the eighth reverse blocking IGBT unit 1238 in the fourth contactor 130 and the third reverse blocking IGBT unit 1233 in the second contactor 128 are turned on, and the motor controller 113 enters the self-heating working condition of the first battery unit 1111 charging the second battery unit 1112.

[0260] Further, the power switch tubes of the upper bridge arm 1132 of the motor controller 113 are synchronously turned on, and the power switch tubes of the lower bridge arm 1132 are synchronously turned off. In this way, the current can enter the coil of the motor 112 through the power switch tubes of the upper bridge arm 1132 from the first battery unit 1111, and charge the coil of the motor 112. After the charging is completed, the power switch tubes of the upper bridge arm 1132 of the motor controller 113 are synchronously turned off, and the power switch tubes of the lower bridge arm 1132 are synchronously turned on. In this way, the coil of the motor 112 can release current, and the current can enter the second battery unit 1112 through the power switch tubes of the lower bridge arm 1132 from the coil of the motor 112, thereby realizing charging of the second battery unit 1112 by the first battery unit 1111.

[0261] Further, as shown in Figure 28 and Figure 29As shown, the second reverse blocking IGBT unit 1232 in the first contactor 127, the third reverse blocking IGBT unit 1233 in the second contactor 128, the fifth reverse blocking IGBT unit 1235 in the third contactor 129, the eighth reverse blocking IGBT unit 1238 in the fourth contactor 130 are turned off, and the first reverse blocking IGBT unit 1231 in the first contactor 127, the fourth reverse blocking IGBT unit 1234 in the second contactor 128, the sixth reverse blocking IGBT unit 1236 in the third contactor 129, the seventh reverse blocking IGBT unit 1237 in the fourth contactor 130 are turned on, the motor controller 113 enters the loop of charging the first battery unit 1111 by the second battery unit 1112 in the self-heating mode.

[0262] Further, the power switch tubes of the upper bridge arm 1132 of the motor controller 113 are synchronously turned off, and the power switch tubes of the lower bridge arm 1132 are synchronously turned on. In this way, the current can flow from the second battery unit 1112 to the coil of the motor 112 through the power switch tubes of the lower bridge arm 1132 to charge the coil of the motor 112. After the charging is completed, the power switch tubes of the upper bridge arm 1132 of the motor controller 113 are synchronously turned on, and the power switch tubes of the lower bridge arm 1132 are synchronously turned off. In this way, the coil of the motor 112 can release the current, and the current can flow from the coil of the motor 112 to the first battery unit 1111 through the power switch tubes of the upper bridge arm 1132, so as to realize the charging of the first battery unit 1111 by the second battery unit 1112.

[0263] Therefore, the alternating on design can constitute an energy circulation, and the energy circulates among the first battery unit 1111, the coil of the motor 112 and the second battery unit 1112. Since the battery internal resistance is large when the temperature is low, the battery internal resistance can have a certain heat effect during the circulation of the energy, so as to achieve the purpose of heating the battery pack 111.

[0264] In some embodiments, for the self-heating mode, another way can also be adopted to realize. Specifically, Figure 30 is a schematic diagram of the on-off state of a plurality of reverse blocking IGBT units when an alternating current is input to the midpoint of the battery pack through the neutral point of the motor according to an embodiment of the utility model. Figure 13 is a schematic diagram of the current flow direction of the main circuit when an alternating current is input to the battery through the neutral point of the motor according to an embodiment of the utility model.

[0265] As Figure 14 and Figure 29As shown, by turning on the second reverse blocking IGBT unit 1232 in the first contactor 127, the first single tube packaging unit 1261, and the sixth reverse blocking IGBT unit 1236 in the third contactor 129, a loop is formed by the first battery unit 1111, the pre-charge resistor 114, the first capacitor 1131, and the second battery unit 1112, so as to realize pre-charging of the first capacitor 1131. During the pre-charging process, the voltage across the first capacitor 1131 gradually increases, and when the pre-charging is completed, the voltage across the first capacitor 1131 is the same as the voltage across the battery pack 111.

[0266] Further, as shown in Figure 30 and Figure 31 , after the pre-charging of the first capacitor 1131 is completed, the first single tube packaging unit 1261 is turned off, and the first reverse blocking IGBT unit 1231 in the first contactor 127, the seventh reverse blocking IGBT unit 1237 in the fourth contactor 130, and the eighth reverse blocking IGBT unit 1238 in the fourth contactor 130 are turned on. The motor controller 113 superimposes a zero sequence on the three-phase current, i.e., the sum of the three-phase currents is not equal to zero, and the zero sequence current is an alternating current with controllable frequency and amplitude. The alternating current charges and discharges the upper half (i.e., the first battery unit 1111) and the lower half (i.e., the second battery unit 1112) of the battery pack 111 through the fourth contactor 130 via the neutral point 116 of the motor 112, and realizes self-heating by heating through the internal resistance of the battery pack 111.

[0267] The vehicle according to an embodiment of the present application is described below with reference to Figure 31 .

[0268] Figure 31 is a block diagram of a vehicle according to an embodiment of the present application, as shown in ​ , the vehicle 100 includes the drive system 1 described in the above embodiments. Alternatively, in some embodiments, the vehicle 100 includes the switch module of the above embodiments, or alternatively, in some embodiments, the vehicle 100 includes the switching device of the above embodiments.

[0269] In some embodiments, the vehicle 100 can be various types of electric vehicles or hybrid vehicles, such as a sedan, a truck, a bus, or other types of vehicles 100.

[0270] According to the vehicle 100 of the embodiment of the utility model, through adopting the driving system 1 described in the above embodiment, the driving system 1 is connected with the main circuit 11 through the switch device 12, and the control module 122 in the switch device 12 is used to control the on-off state of the reverse blocking type insulated gate bipolar transistor unit 1212 in the switch device 12 according to the vehicle working mode, so that the circuit connection state of the main circuit 11 is effectively controlled. In the system, the reverse blocking type insulated gate bipolar transistor unit 1212 can not only accurately regulate the current flow direction of the main circuit 11, but also has the ability to block reverse current. Specifically, the reverse blocking type insulated gate bipolar transistor 1213 inserts a P+ layer between its N+ emitter region and drift region, forms a reverse blocking PN junction, and the P+ layer extends to the oxide layer at the edge, thereby enhancing the reverse voltage blocking capability by forming a complete PN junction. The PN junction can effectively shield the electric potential when reverse biased, thereby achieving the blocking of reverse current. By accurately adjusting the breakdown voltage of the PN junction, the blocking capability of the reverse current is enhanced, so that the switch device 12 can control the current flow while avoiding the influence of the reverse current. In addition, since the reverse blocking type insulated gate bipolar transistor 1213 does not need an additional diode to achieve reverse current blocking, the additional conduction loss is reduced, the circuit structure is simplified, the number of components is reduced, thereby improving the performance of the vehicle 100 and reducing the cost.

[0271] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the utility model. In the present specification, the exemplary description of the above terms does not necessarily refer to the same embodiment or example.

[0272] Although the embodiments of the utility model have been shown and described, those skilled in the art can understand that various changes, modifications, replacements and variations can be made to these embodiments without departing from the principles and purposes of the utility model, and the scope of the utility model is defined by the claims and their equivalents.

Claims

1. A switch module, characterized in that, include: At least one reverse blocking insulated gate bipolar transistor (IGBT) unit, the IGBT unit comprising at least one reverse blocking IGBT, the at least one IGBT unit being adapted to be connected to a main circuit for controlling the circuit connection state of the main circuit.

2. The switching module according to claim 1, characterized in that, The switching module also includes a substrate; The switching module includes multiple reverse blocking insulated gate bipolar transistor (IGBT) units, which are integrated on the substrate.

3. The switch module according to claim 2, characterized in that, Multiple reverse blocking insulated gate bipolar transistor units are arranged in a matrix.

4. The switching module according to claim 2, characterized in that, Multiple reverse blocking insulated gate bipolar transistor units are arranged along the length of the substrate.

5. The switching module according to any one of claims 2-4, characterized in that, A portion of the reverse blocking insulated gate bipolar transistor (IGBT) units are used to implement unidirectional current transfer control on the main circuit.

6. The switch module according to claim 5, characterized in that, Another portion of the reverse blocking insulated gate bipolar transistor (IGBT) units is used to implement bidirectional current transmission control on the main circuit.

7. The switch module according to claim 6, characterized in that, In the other part of the reverse blocking insulated gate bipolar transistor (IGBT) unit, every two reverse blocking IGBT units are connected in reverse parallel.

8. The switch module according to claim 7, characterized in that, The other part of the reverse blocking insulated gate bipolar transistor unit includes a first reverse blocking insulated gate bipolar transistor unit and a second reverse blocking insulated gate bipolar transistor unit; The substrate also includes a first conductive region and a second conductive region; The collector of the first reverse blocking insulated gate bipolar transistor (IGBT) unit is connected to the first conductive region, the emitter of the first IGBT unit is connected to the second conductive region, the emitter of the second IGBT unit is connected to the first conductive region, and the collector of the second IGBT unit is connected to the second conductive region.

9. The switch module according to claim 8, characterized in that, The first reverse blocking insulated gate bipolar transistor (IGBT) unit and the second reverse blocking IGBT unit are arranged along the length direction of the substrate; Both the first conductive region and the second conductive region extend along the length direction of the substrate, and the first conductive region and the second conductive region are arranged along the width direction of the substrate; In the width direction of the substrate, the first reverse blocking insulated gate bipolar transistor unit and the second reverse blocking insulated gate bipolar transistor are located between the first conductive region and the second conductive region.

10. The switch module according to claim 8, characterized in that, The switching module also includes: A first connection terminal, the first connection terminal being connected to the first conductive area; and The second connection terminal is connected to the second conductive area.

11. The switch module according to claim 8, characterized in that, The other part of the reverse blocking insulated gate bipolar transistor unit also includes a third reverse blocking insulated gate bipolar transistor unit and a fourth reverse blocking insulated gate bipolar transistor unit; The substrate also includes a third conductive region and a fourth conductive region; The collector of the third reverse blocking insulated gate bipolar transistor (IGBT) unit is connected to the third conductive region, the emitter of the third reverse blocking IGBT unit is connected to the fourth conductive region, the emitter of the fourth reverse blocking IGBT unit is connected to the third conductive region, and the collector of the fourth reverse blocking IGBT unit is connected to the fourth conductive region.

12. The switch module according to claim 11, characterized in that, The first reverse blocking insulated gate bipolar transistor (IGBT) unit, the second reverse blocking IGBT unit, the third reverse blocking IGBT unit, and the fourth reverse blocking IGBT unit are arranged along the length direction of the substrate; The third conductive region and the fourth conductive region both extend along the length direction of the substrate. The third conductive region and the first conductive region are arranged along the length direction of the substrate. The fourth conductive region and the second conductive region are arranged along the length direction of the substrate. The third conductive region and the fourth conductive region are arranged along the width direction of the substrate. The third reverse blocking insulated gate bipolar transistor unit and the fourth reverse blocking insulated gate bipolar transistor are located between the third conductive region and the fourth conductive region in the width direction of the substrate.

13. The switch module according to claim 11, characterized in that, The switching module also includes: A third connection terminal, the third connection terminal being connected to the third conductive area; and The fourth connection terminal is connected to the fourth conductive area.

14. The switch module according to claim 11, characterized in that, The other part of the reverse blocking insulated gate bipolar transistor unit also includes a fifth reverse blocking insulated gate bipolar transistor unit and a sixth reverse blocking insulated gate bipolar transistor unit; The substrate also includes a fifth conductive region and a sixth conductive region; The collector of the fifth reverse blocking insulated gate bipolar transistor (IGBT) unit is connected to the fifth conductive region, the emitter of the fifth IGBT unit is connected to the sixth conductive region, the emitter of the sixth IGBT unit is connected to the fifth conductive region, and the collector of the sixth IGBT unit is connected to the sixth conductive region.

15. The switch module according to claim 14, characterized in that, The first reverse blocking insulated gate bipolar transistor (IGBT) unit, the second reverse blocking IGBT unit, the third reverse blocking IGBT unit, the fourth reverse blocking IGBT unit, the fifth reverse blocking IGBT unit, and the sixth reverse blocking IGBT unit are arranged along the length of the substrate; The fifth conductive region and the sixth conductive region both extend along the length direction of the substrate, the fifth conductive region and the sixth conductive region are arranged along the width direction of the substrate, the fifth conductive region, the third conductive region and the first conductive region are arranged along the length direction of the substrate, and the sixth conductive region, the fourth conductive region and the second conductive region are arranged along the length direction of the substrate. The fifth reverse blocking insulated gate bipolar transistor (IGBT) unit and the sixth reverse blocking IGBT unit are located between the fifth conductive region and the sixth conductive region in the width direction of the substrate.

16. The switch module according to claim 14, characterized in that, The switching module also includes: The fifth connection terminal is connected to the fifth conductive area; and The sixth connection terminal is connected to the sixth conductive area.

17. The switch module according to claim 7, characterized in that, The other part of the reverse blocking insulated gate bipolar transistor unit includes a seventh reverse blocking insulated gate bipolar transistor unit and an eighth reverse blocking insulated gate bipolar transistor unit; The substrate also includes a seventh conductive region and an eighth conductive region; The collector of the seventh reverse blocking insulated gate bipolar transistor (IGBT) unit is connected to the seventh conductive region, the emitter of the seventh reverse blocking IGBT unit is connected to the eighth conductive region, the emitter of the eighth reverse blocking IGBT unit is connected to the seventh conductive region, and the collector of the eighth reverse blocking IGBT unit is connected to the eighth conductive region.

18. The switch module according to claim 17, characterized in that, The seventh reverse blocking insulated gate bipolar transistor unit and the eighth reverse blocking insulated gate bipolar transistor unit are arranged along the length direction of the substrate; Both the seventh conductive region and the eighth conductive region extend along the length direction of the substrate, and are arranged along the width direction of the substrate. The seventh reverse blocking insulated gate bipolar transistor unit and the eighth reverse blocking insulated gate bipolar transistor unit are located between the seventh conductive region and the eighth conductive region in the width direction of the substrate.

19. The switch module according to claim 17, characterized in that, The switching module also includes: A seventh connection terminal, wherein the seventh connection terminal is connected to the seventh conductive region; and The eighth connection terminal is connected to the eighth conductive area.

20. The switch module according to claim 17, characterized in that, The reverse blocking insulated gate bipolar transistor unit of the aforementioned portion includes a ninth reverse blocking insulated gate bipolar transistor unit; The switch module also includes a ninth conductive region; The emitter of the ninth reverse blocking insulated gate bipolar transistor unit is connected to the ninth conductive region, and the collector of the ninth reverse blocking insulated gate bipolar transistor unit is connected to the eighth conductive region.

21. The switching module according to claim 20, characterized in that, The seventh reverse blocking insulated gate bipolar transistor (IGBT) unit, the eighth reverse blocking IGBT unit, and the ninth reverse blocking IGBT unit are arranged along the length of the substrate; The ninth conductive region extends along the length direction of the substrate, and the ninth conductive region and the seventh conductive region are arranged along the length direction of the substrate; In the width direction of the substrate, the ninth reverse blocking insulated gate bipolar transistor unit is located between the eighth conductive region and the ninth conductive region.

22. The switching module according to claim 20, characterized in that, The switching module also includes: The ninth connection terminal is connected to the ninth conductive area.

23. The switch module according to claim 20, characterized in that, The reverse blocking insulated gate bipolar transistor unit in the aforementioned portion also includes a tenth reverse blocking insulated gate bipolar transistor unit; The switching module further includes a tenth conductive region, the collector of the tenth reverse blocking insulated gate bipolar transistor unit is connected to the tenth conductive region, and the emitter of the tenth reverse blocking insulated gate bipolar transistor unit is connected to the eighth conductive region.

24. The switch module according to claim 23, characterized in that, The seventh, eighth, ninth, and tenth reverse-blocking insulated-gate bipolar transistor (IGBT) units are arranged along the length of the substrate, with the tenth IGBT unit located on the side of the ninth IGBT unit away from the eighth IGBT unit. The tenth conductive region extends along the length direction of the substrate, and the tenth conductive region, the ninth conductive region, and the seventh conductive region are arranged along the length direction of the substrate; The tenth reverse blocking insulated gate bipolar transistor unit is located between the eighth conductive region and the tenth conductive region in the width direction of the substrate.

25. The switch module according to claim 23, characterized in that, The switching module also includes: The tenth connection terminal is connected to the tenth conductive area.

26. The switch module according to claim 23, characterized in that, The reverse blocking insulated gate bipolar transistor unit in the aforementioned portion also includes an eleventh reverse blocking insulated gate bipolar transistor unit; The switching module further includes an eleventh conductive region, the collector of the eleventh reverse blocking insulated gate bipolar transistor unit is connected to the tenth conductive region, and the emitter of the eleventh reverse blocking insulated gate bipolar transistor unit is connected to the eleventh conductive region.

27. The switch module according to claim 26, characterized in that, The seventh reverse blocking insulated gate bipolar transistor (IGBT) unit, the eighth reverse blocking IGBT unit, the ninth reverse blocking IGBT unit, the tenth reverse blocking IGBT unit, and the eleventh reverse blocking IGBT unit are arranged along the length of the substrate, with the eleventh reverse blocking IGBT unit located on the side of the tenth reverse blocking IGBT unit away from the ninth reverse blocking IGBT unit. The eleventh conductive region and the tenth conductive region are arranged along the width direction of the substrate, and the eleventh conductive region and the eighth conductive region are arranged along the length direction of the substrate. In the width direction of the substrate, the eleventh reverse blocking insulated gate bipolar transistor unit is located between the tenth conductive region and the eleventh conductive region.

28. The switch module according to claim 26, characterized in that, The switching module also includes: The eleventh connection terminal is connected to the eleventh conductive area.

29. The switching module according to any one of claims 1-4, characterized in that, The gate of the reverse blocking insulated gate bipolar transistor has a planar gate structure.

30. A switching device, characterized in that, Includes the switch module as described in any one of claims 1-29.

31. The switching device according to claim 30, characterized in that, The switching device further includes a control module, which is connected to the switching module and is used to control the on / off state of the reverse blocking insulated gate bipolar transistor unit in the switching module.

32. The switching device according to claim 31, characterized in that, The control module includes: Multiple first driving circuits are connected to the gates of multiple reverse blocking insulated gate bipolar transistor (IGBT) units of the switching module, and are used to control the on / off state of the corresponding IGBT units.

33. The switching device according to claim 32, characterized in that, The control module also includes: The control unit is connected to a plurality of the first drive circuits respectively and is used to send drive signals to the first drive circuits.

34. The switching device according to claim 33, characterized in that, The switching device further includes: A circuit board, a plurality of first driving circuits and the control unit are disposed on the circuit board, and the plurality of first driving circuits are arranged along the length direction of the circuit board.

35. The switching device according to claim 34, characterized in that, The control module also includes: An isolated power supply is located on the circuit board and is connected to a plurality of first drive circuits for supplying power to each of the first drive circuits.

36. The switching device according to claim 35, characterized in that, The switching device further includes: At least one second drive circuit is located on the circuit board and is connected to the control unit and the isolation power supply. At least one single-tube package unit is located on the circuit board, and the gate of the at least one single-tube package unit is correspondingly connected to the at least one second driving circuit.

37. The switching device according to claim 36, characterized in that, The at least one second driving circuit includes two second driving circuits, and the at least one single-tube package unit includes a first single-tube package unit and a second single-tube package unit. One second driving circuit is connected to the gate of the first single-tube package unit, and the other second driving circuit is connected to the gate of the second single-tube package unit.

38. A drive system, characterized in that, The drive system includes the switching device according to any one of claims 30-37.

39. The drive system according to claim 38, characterized in that, The drive system also includes a main circuit, which is connected to the switching device. The switching device is used to control the reverse blocking insulated gate bipolar transistor unit of the switching module in the switching device according to the vehicle's operating mode, so as to control the circuit connection state of the main circuit.

40. The drive system according to claim 39, characterized in that, The main circuit includes: A battery pack, the battery pack including a first battery unit and a second battery unit, the first battery unit including at least one battery cell, and the second battery unit including at least one battery cell; The first end of the first battery unit is connected to the third and ninth connection terminals of the switch module, the second end of the first battery unit is connected to the first connection terminal of the switch module, the first end of the second battery unit is connected to the second and seventh connection terminals of the switch module, and the second end of the second battery unit is connected to the fifth connection terminal of the switch module.

41. The drive system according to claim 39, characterized in that, The main circuit also includes: The motor has its N windings connected together at their first ends to form a neutral point, which is connected to the eighth connection terminal of the switch module, wherein N ≥ 1; The motor controller includes a first capacitor and N bridge arms. The midpoints of the N bridge arms are respectively connected to the second ends of the N windings of the motor. The first ends of the N bridge arms and the first end of the first capacitor are connected to a first busbar. The second ends of the N bridge arms and the second end of the first capacitor are connected to a second busbar. The first busbar is also connected to the fourth and eleventh connection terminals of the switch module. The second busbar is also connected to the sixth connection terminal of the switch module.

42. The drive system according to claim 40, characterized in that, The main circuit also includes: A pre-charge resistor, the first end of which is connected to the first end of the first single-tube package unit of the switching device, the second end of the first single-tube package unit is connected to the first end of the first battery unit and the third connection terminal of the switching module, and the second end of the pre-charge resistor is connected to the fourth connection terminal and the first busbar of the switching module.

43. The drive system according to claim 41, characterized in that, The main circuit also includes: The second capacitor has its first end connected to the tenth connection terminal of the switch module, its second end connected to the second busbar, and its two ends adapted to connect to a charging port.

44. The drive system according to claim 43, characterized in that, The first end of the second single-tube encapsulation unit of the switching device is connected to the center point and the eighth connection terminal of the switching module, and the second end of the second single-tube encapsulation unit is connected to the tenth connection terminal of the switching module. The second single-tube encapsulation unit is used to pre-charge the second capacitor.

45. A vehicle, characterized in that, include: The switching module according to any one of claims 1-29, or the switching device according to any one of claims 30-37, or the driving system according to any one of claims 38-44.

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