Air supply device and semiconductor cleaning equipment

Abstract

The utility model discloses an air supply device and semiconductor cleaning equipment. The air supply device comprises a fan module and a heating module, the fan module and the heating module are stacked, the heating module is located on the air outlet side of the fan module, the heating module comprises a first heating assembly, the first heating assembly comprises a plurality of annular heating pieces, the annular heating pieces are sequentially arranged in a sleeved mode, an air passing gap is formed between every two adjacent annular heating pieces, and the annular heating pieces are arranged in the air passing gap. Under the condition that the air supply device is installed on the top of the cavity body, the annular heating piece is located on the side, facing the wafer supporting base, of the fan module, and the central axis of the annular heating piece coincides with the central axis of the wafer supporting base. According to the scheme, the problem that the temperature uniformity of the wafer is poor when the wafer is dried by the semiconductor cleaning equipment in the related technology can be solved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor cleaning equipment, and in particular to an air supply device and semiconductor cleaning equipment. Background Technology

[0002] Wet cleaning, a commonly used cleaning method, is highly efficient and reliable, and is widely used in the semiconductor industry. The wet cleaning process requires specialized semiconductor cleaning equipment, and its main purpose is to remove particles, organic matter, metal ions, and other contaminants from the wafer surface. However, at the end of the cleaning process, it is essential to ensure that the wafer surface is completely dry before proceeding to the next step. Therefore, the wafer drying process is a crucial step in ensuring the performance and stability of semiconductor devices.

[0003] In the wafer drying process, the relevant technology mainly replaces the high surface tension water on the wafer surface by spraying a low surface tension and volatile cleaning solution (such as isopropyl alcohol (IPA)) onto the wafer surface. Due to the volatile nature of the cleaning solution, there is a large temperature difference between the area of ​​the wafer being sprayed and other areas of the wafer, resulting in poor wafer temperature uniformity. Utility Model Content

[0004] This utility model discloses a semiconductor cleaning device to solve the problem of poor temperature uniformity of wafers when drying wafers in related technologies.

[0005] To solve the above-mentioned technical problems, this utility model is implemented as follows:

[0006] In a first aspect, this application discloses an air supply device for installation on the top of the chamber body of a semiconductor cleaning equipment and opposite to the wafer support located inside the chamber body. The air supply device includes a fan module and a heating module.

[0007] The fan module and the heating module are stacked, and the heating module is located on the air outlet side of the fan module. The heating module includes a first heating component, which includes multiple annular heating elements. The multiple annular heating elements are sequentially nested, and there is an air passage gap between two adjacent annular heating elements. When the air supply device is installed on the top of the chamber body, the annular heating elements are located on the side of the fan module facing the wafer support, and the central axis of the annular heating elements coincides with the central axis of the wafer support.

[0008] Secondly, this application also discloses a semiconductor cleaning device, which includes a chamber body, a wafer support seat disposed within the chamber body, a spray structure, and the air supply device described in the first aspect. The air supply device is installed on the top of the chamber body and is opposite to the wafer support seat. The annular heating element is located on the side of the fan module facing the wafer support seat, and the central axis of the annular heating element coincides with the central axis of the wafer support seat. The spray structure is disposed within the chamber body and is used to spray cleaning liquid onto the upper surface of the wafer located on the wafer support seat.

[0009] The technical solution adopted in this utility model can achieve the following technical effects:

[0010] The air supply device disclosed in this application embodiment includes a fan module and a heating module. The first heating component of the heating module is configured to include multiple annular heating elements. When the air supply device is installed on top of the chamber body, the annular heating elements are located on the side of the fan module facing the wafer support, with the central axis of the annular heating elements coinciding with the central axis of the wafer support. This results in the wafer having multiple annular regions with different radii corresponding to the multiple annular heating elements. Therefore, when the nozzles of the spray structure move radially from the center of the wafer to its edge and spray cleaning fluid, the gas blown by the fan module passes through… After being heated by the overheating module, the gas reaches the surface of the wafer to heat the wafer surface. Since multiple annular heating elements can be controlled independently, the temperature of the gas reaching the annular area of ​​the wafer being sprayed with cleaning fluid can be adjusted by regulating the heating power of the annular heating element corresponding to the annular area of ​​the wafer being sprayed with cleaning fluid. This allows the temperature of the annular area of ​​the wafer being sprayed with cleaning fluid to be relatively uniform with the temperature of other areas of the wafer, thereby improving the temperature uniformity of the wafer when the semiconductor cleaning equipment dries the wafer. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of the air supply device disclosed in the embodiment of this utility model;

[0012] Figure 2 This is a schematic diagram showing the distribution of the first heating component and the second heating component disclosed in an embodiment of the present utility model;

[0013] Figure 3 This is a schematic diagram of the flow equalization plate disclosed in an embodiment of the present utility model;

[0014] Figure 4 This is a schematic diagram of the semiconductor cleaning equipment disclosed in an embodiment of the present utility model; wherein, the arrow indicates the flow direction of gas entering the chamber body;

[0015] Figure 5 A distribution diagram of the exhaust part is disclosed for the embodiments of the utility model.

[0016] Figure 6 A schematic diagram of the multiple temperature detection members detecting wafer temperature is disclosed for the embodiments of the utility model.

[0017] Explanation of reference signs:

[0018] 100-chamber body, 110-exhaust part,

[0019] 200-wafer support seat, 210-bearing part,

[0020] 300-air supply device, 310-fan module, 320-heating module, 321-first heating assembly, 321a-annular heating member, 322-second heating assembly, 330-current equalization module, 331-current equalization plate, 3311-central region, 3312-edge region, 331a-current equalization hole, 340-first filter module, 350-second filter module, 360-sealing member,

[0021] 400-spraying structure,

[0022] 500-temperature detection module, 510-temperature detection member,

[0023] 600-first purging structure,

[0024] 700-second purging structure,

[0025] 810-liquid recovery device, 811-annular inner cavity, 812-annular inlet, 813-annular outlet, 820-first pipeline, 821-annular receiving part, 830-second pipeline, 840-first pressure sensor, 850-first pressure adjusting device, 860-second pressure sensor, 870-second pressure adjusting device. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical scheme and advantages of the utility model clearer, the following will combine the utility model specific embodiments and corresponding drawings to make the utility model technical scheme clear and complete. Obviously, the described embodiments are only a part of the embodiments of the utility model, not all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by the person skilled in the art without creative labor belong to the scope of the utility model protection.

[0027] The following will combine the drawings to specifically describe the technical scheme disclosed by each embodiment of the utility model.

[0028] Please refer to Figures 1 to 6The utility model embodiment discloses a kind of air supply device 300, the disclosed air supply device 300 is used to install in the top of the chamber body 100 of semiconductor cleaning equipment, and with wafer support seat 200 in the chamber body 100 opposite.

[0029] It needs to be explained that, semiconductor cleaning equipment will produce waste gas in the process of cleaning wafer, air supply device 300 is used to supply air to chamber body 100, gas (including the waste gas produced in the process of cleaning wafer) in chamber body 100 is discharged from the bottom wall position of chamber body 100, while realizing waste gas discharge, guarantee the pressure stability in chamber body 100.

[0030] Air supply device 300 includes fan module 310 and heating module 320. Fan module 310 is superposed with heating module 320, and heating module 320 is located at the air outlet side of fan module 310. The gas blown by fan module 310 can be heated by heating module 320.

[0031] Heating module 320 includes first heating assembly 321, and first heating assembly 321 includes a plurality of annular heating pieces 321a. The plurality of annular heating pieces 321a can be independently controlled, and the plurality of annular heating pieces 321a are sequentially sleeved, with an air passing gap between adjacent two annular heating pieces 321a. The gas blown by fan module 310 can flow out from the air passing gap between annular heating pieces 321a after being heated by heating module 320. The width of the air passing gap between annular heating pieces 321a and the number of annular heating pieces 321a can be set according to actual application.

[0032] In the case where air supply device is installed on the top of chamber body 100, annular heating piece 321a is located at the side of fan module 310 facing wafer support seat 200, and the central axis of annular heating piece 321a coincides with the central axis of wafer support seat 200.

[0033] The wafer is supported on the supporting seat 200, and the plurality of annular heating elements 321a correspond to different radius annular regions of the wafer in the extending direction of the central axis of the annular heating element 321a. When the semiconductor cleaning device finishes cleaning the wafer and sprays cleaning liquid (here, the cleaning liquid sprayed on the upper surface of the wafer during the drying process, which has low surface tension and volatile characteristics, such as isopropyl alcohol. The cleaning of the wafer before drying can use other liquids, such as ultrapure water) to the surface of the wafer through the spray structure 400, the wafer supporting seat 200 drives the wafer to rotate around the central axis of the wafer supporting seat 200, and the nozzles of the spray structure 400 move radially from the center of the wafer to the edge of the wafer and spray cleaning liquid. During this process, the gas blown by the fan module 310 is heated by the heating module 320 and reaches the surface of the wafer to heat the surface of the wafer, thereby improving the drying efficiency of the wafer.

[0034] Since the cleaning liquid sprayed on the wafer has volatile characteristics, there is a temperature difference between the annular region of the wafer being sprayed with cleaning liquid and other annular regions of the wafer. By adjusting the heating power of the annular heating element 321a corresponding to the annular region of the wafer being sprayed with cleaning liquid, the temperature of the gas reaching the annular region of the wafer being sprayed with cleaning liquid can be adjusted, thereby adjusting the temperature of the annular region of the wafer being sprayed with cleaning liquid to make the temperature of the annular region of the wafer being sprayed with cleaning liquid relatively uniform with the temperature of other regions of the wafer. During the movement of the nozzles of the spray structure 400 radially from the center of the wafer to the edge of the wafer, the heating power of the plurality of annular heating elements 321a is adjusted with the movement of the nozzles of the spray structure 400, thereby ensuring the temperature uniformity of the wafer during the drying process.

[0035] The air supply device disclosed by the embodiment of the present application sets the first heating assembly 321 of the heating module 320 as a structure including multiple annular heating pieces 321a, so that when the air supply device is installed on the top of the chamber body 100, the annular heating pieces 321a are located on the side of the blower module 310 facing the wafer support seat 200, and the central axis of the annular heating pieces 321a coincides with the central axis of the wafer support seat 200, so that the wafer has multiple annular regions with different radii corresponding to the multiple annular heating pieces 321a, and when the nozzles of the spraying structure 400 move in the radial direction of the wafer from the center of the wafer to the edge of the wafer and spray the cleaning liquid, the gas blown by the blower module 310 reaches the surface of the wafer after being heated by the heating module 320 to heat the surface of the wafer. Since the multiple annular heating pieces 321a can be independently controlled, the temperature of the gas reaching the annular region of the wafer being sprayed with the cleaning liquid can be adjusted by adjusting the heating power of the annular heating piece 321a corresponding to the annular region of the wafer being sprayed with the cleaning liquid, so that the temperature of the annular region of the wafer being sprayed with the cleaning liquid can be adjusted to be relatively uniform with the temperature of other regions of the wafer, thereby improving the uniformity of the temperature of the wafer during drying in the semiconductor cleaning equipment.

[0036] To accurately adjust the temperature of the gas reaching the annular region of the wafer being sprayed with the cleaning liquid (i.e., the annular region in the spraying state), the heating module 320 can optionally further include multiple second heating assemblies 322, which can be symmetrically arranged outside the outermost annular heating piece 321a.

[0037] The air supply device disclosed by the embodiment of the present application sets multiple second heating assemblies 322, which are symmetrically arranged outside the outermost annular heating piece 321a, so that the gas blown by the blower module 310 into the chamber body 100 is heated by the multiple second heating assemblies 322 and the multiple annular heating pieces 321a at the same time, thereby avoiding a large temperature difference between the columnar region of the chamber body 100 corresponding to the multiple annular heating pieces 321a and the temperature outside the columnar region, and avoiding the airflow in the chamber body 100 being disturbed due to the large temperature difference between the columnar region and the outside of the columnar region. By setting the second heating assembly 322, the stability of the airflow in the chamber body 100 is facilitated, and the temperature of the gas reaching the annular region of the wafer being sprayed with the cleaning liquid is accurately adjusted.

[0038] Optionally, the air supply device 300 can further include a flow equalization module 330, which can be sealingly connected to the top wall of the chamber body 100 through a sealing member 360. The flow equalization module 330 can be arranged on the side of the heating module 320 away from the fan module 310, and can include a flow equalization plate 331 having a plurality of flow equalization holes 331a.

[0039] The air supply device disclosed in the embodiments of the present application can make the flow equalization plate 331 of the flow equalization module 330 have a plurality of flow equalization holes 331a, so that the gas passing through the plurality of annular heating elements 321a and the second heating assembly 322 can enter the chamber body 100 relatively uniformly, thereby facilitating the uniformity of the airflow distribution in the chamber body 100. Moreover, the distribution of the airflow by the flow equalization plate 331 can reduce the turbulence and vortex of the airflow, thereby avoiding the problem of relatively large noise of the air supply device 300 caused by the turbulence and vortex of the airflow, and facilitating the alleviation of the vibration of the semiconductor cleaning equipment, thereby facilitating the stability of the semiconductor cleaning equipment as a whole.

[0040] It should be noted that the temperature distribution of the gas entering the chamber body 100 through the flow equalization plate 331 still corresponds to the temperature of the plurality of annular heating elements 321a, and the gas heated by each annular heating element 321a still mainly distributes in the area corresponding to the annular heating element 321a after entering the chamber body 100 through the flow equalization plate 331, thereby facilitating the accurate adjustment of the temperature of the gas reaching the annular area of the wafer being sprayed with cleaning liquid.

[0041] Optionally, the flow equalization plate 331 can have a central region 3311 and an edge region 3312 surrounding the central region 3311, the flow equalization holes 331a of the central region 3311 can have a larger diameter than the flow equalization holes 331a of the edge region 3312, and in the extension direction of the central axis of the wafer support seat 200, the projection of the central region 3311 covers the wafer support seat 200, and the edge region 3312 can be opposite to the peripheral region surrounding the wafer support seat 200. For example, the diameter of the flow equalization holes 331a of the central region 3311 can be 5mm-8mm, including 5mm and 8mm; the diameter of the flow equalization holes 331a of the edge region 3312 can be 3mm-4mm, including 3mm and 4mm.

[0042] The air supply device disclosed in this application sets the aperture of the flow equalization hole 331a in the central region 3311 of the flow equalization plate 331 to be larger than the aperture of the flow equalization hole 331a in the edge region 3312 of the flow equalization plate 331. This results in a relatively large gas flow rate reaching the wafer surface through the central region 3311, which is beneficial to improving the wafer drying efficiency and regulating the wafer temperature. The aperture of the flow equalization hole 331a in the edge region 3312 is smaller, resulting in a larger gas flow velocity entering the chamber body through the edge region 3312. This can form an air curtain surrounding the wafer support 200, which is beneficial to the stability of the airflow in the area opposite to the central region 3311 within the chamber body 100.

[0043] To ensure the cleanliness of the gas entering the chamber body 100, the air supply device 300 may optionally include a first filter module 340, which may be located between the heating module 320 and the flow equalization module 330, thereby preventing impurities from entering the chamber body 100.

[0044] Optionally, the air supply device 300 may also include a second filter module 350, which may be located on the air inlet side of the fan module 310, thereby ensuring the cleanliness of the gas entering the chamber body 100.

[0045] This application also discloses a semiconductor cleaning apparatus, which includes a chamber body 100, a wafer support 200 disposed within the chamber body 100, a spray structure 400, and an air supply device 300 disclosed in the above embodiments. The air supply device 300 is installed on the top of the chamber body 100 and opposite to the wafer support 200. An annular heating element 321a is located on the side of the fan module 310 facing the wafer support 200, and the central axis of the annular heating element 321a coincides with the central axis of the wafer support 200. The spray structure 400 is disposed within the chamber body 100 and is used to spray cleaning fluid onto the upper surface of the wafer located on the wafer support 200.

[0046] The wafer is supported on the supporting base 200, and the plurality of annular heating elements 321a correspond to different radius annular regions of the wafer in the direction of the extension of the central axis of the annular heating elements 321a. When the semiconductor cleaning apparatus finishes cleaning the wafer and sprays cleaning liquid (here, the cleaning liquid sprayed on the upper surface of the wafer during the drying process, which has low surface tension and volatile characteristics, such as isopropyl alcohol. The cleaning of the wafer before drying can use other liquids, such as ultrapure water) on the surface of the wafer by the spraying structure 400, the wafer supporting base 200 drives the wafer to rotate around the central axis of the wafer supporting base 200, and the nozzles of the spraying structure 400 move radially from the center of the wafer to the edge of the wafer and spray cleaning liquid. During this process, the gas blown by the fan module 310 is heated by the heating module 320 and reaches the surface of the wafer to heat the surface of the wafer, thereby improving the drying efficiency of the wafer.

[0047] Since the cleaning liquid sprayed on the wafer has volatile characteristics, there is a temperature difference between the annular region of the wafer being sprayed with cleaning liquid and other annular regions of the wafer. By adjusting the heating power of the annular heating element 321a corresponding to the annular region of the wafer being sprayed with cleaning liquid, the temperature of the gas reaching the annular region of the wafer being sprayed with cleaning liquid can be adjusted, thereby adjusting the temperature of the annular region of the wafer being sprayed with cleaning liquid to make the temperature of the annular region of the wafer being sprayed with cleaning liquid relatively uniform with the temperature of other regions of the wafer. During the movement of the nozzles of the spraying structure 400 radially from the center of the wafer to the edge of the wafer, the heating power of the plurality of annular heating elements 321a is adjusted with the movement of the nozzles of the spraying structure 400, thereby ensuring the temperature uniformity of the wafer during the drying process.

[0048] The semiconductor cleaning equipment disclosed by the embodiments of the present application is provided with a fan module 310 and a heating module 320, and the first heating assembly 321 of the heating module 320 is provided in a structure comprising a plurality of annular heating pieces 321a, so that, in the case that the air supply device is installed on the top of the chamber body 100, the annular heating pieces 321a are located on the side of the fan module 310 facing the wafer support seat 200, and the central axis of the annular heating pieces 321a coincides with the central axis of the wafer support seat 200, so that the wafer has a plurality of annular regions with different radii corresponding to the plurality of annular heating pieces 321a, and when the nozzles of the spraying structure 400 move in the radial direction of the wafer from the center of the wafer to the edge of the wafer and spray the cleaning liquid, the gas blown by the fan module 310 reaches the surface of the wafer after being heated by the heating module 320 to heat the surface of the wafer. Since the plurality of annular heating pieces 321a can be independently controlled, the temperature of the gas reaching the annular region of the wafer where the cleaning liquid is being sprayed can be adjusted by adjusting the heating power of the annular heating piece 321a corresponding to the annular region of the wafer where the cleaning liquid is being sprayed, so that the temperature of the annular region of the wafer where the cleaning liquid is being sprayed can be adjusted to make the temperature of the annular region of the wafer where the cleaning liquid is being sprayed relatively uniform with the temperature of other regions of the wafer, thereby improving the uniformity of the wafer temperature when the semiconductor cleaning equipment dries the wafer.

[0049] In order to make the semiconductor cleaning equipment intelligent, the semiconductor cleaning equipment can also optionally comprise a control module, the spraying structure 400 and the plurality of annular heating pieces 321a can be connected with the control module, and the control module can be used to control the heating power of the plurality of annular heating pieces 321a according to the spraying position of the spraying structure 400 on the wafer, so that the semiconductor cleaning equipment can automatically adjust the heating power of the annular heating piece 321a corresponding to the annular region of the wafer where the cleaning liquid is being sprayed during the process that the nozzles of the spraying structure 400 move in the radial direction of the wafer from the center of the wafer to the edge of the wafer and spray the cleaning liquid, so that the semiconductor cleaning equipment is more intelligent.

[0050] In order to further ensure the uniformity of the wafer temperature, the semiconductor cleaning equipment can also optionally comprise a control module and a temperature detection module 500, the temperature detection module 500 can be used to detect the actual temperature of the wafer at different positions in the radial direction, and the temperature detection module 500 and the plurality of annular heating pieces 321a are connected with the control module, and the control module is used to control the heating power of the plurality of annular heating pieces 321a according to the detected actual temperature of the wafer at different positions in the radial direction.

[0051] Since the plurality of annular heating members 321a correspond to the annular regions of different radii of the wafer in the extending direction of the central axis of the annular heating member 321a, the temperature of the gas reaching the annular region corresponding to the annular heating member 321a can be adjusted by adjusting the heating power of the annular heating member 321a, and then the temperature of the corresponding annular region of the wafer is adjusted. When the temperature detection module 500 detects that the temperature difference of a certain annular region of the wafer from the preset temperature deviates from the preset range or the temperature difference from other regions of the wafer deviates from the preset range, the heating power of the corresponding annular heating member 321a can be controlled (the heating power is increased or decreased according to the actual situation) to adjust the temperature of the annular region of the wafer whose temperature difference deviates from the preset range to the temperature difference within the preset range, so as to further ensure the uniformity of the wafer temperature.

[0052] For details, please refer to Figure 6 For example, the temperature detection module 500 can include four temperature detection members 510, which respectively detect four annular regions of the wafer, which can be annular region A, annular region B, annular region C, and annular region D. When the temperature difference of the annular region A deviates from the preset range, the heating power of the annular heating member 321a corresponding to the annular region A can be adjusted, and the heating power of the annular heating member 321a corresponding to the annular region B can be adjusted when the temperature difference of the annular region B deviates from the preset range, and so on.

[0053] A specific control method for adjusting the temperature of the wafer, the actual temperature of the wafer at different positions in the radial direction is detected by the temperature detection module 500, the actual temperature detected by the temperature detection module 500 is fed back to the control module, and the processed temperature signal is fed back to the power regulator. The power regulator adjusts the power of the annular heating member 321a.

[0054] The control module can also compare the actual temperature detected by the temperature detection module 500 with the preset process temperature of the cleaning liquid acting on the surface of the wafer. When the difference between the actual temperature of the wafer surface and the preset process temperature exceeds the predetermined temperature range, the control module feeds back the temperature signal to the power regulator, and the power regulator adjusts the power of the annular heating member 321a, so that the temperature difference between each annular region of the wafer surface and the preset process temperature is within the predetermined temperature range.

[0055] In order to improve the drying efficiency of the semiconductor cleaning equipment on the wafer, optionally, the semiconductor cleaning equipment can further include a first purge structure 600, which can be arranged in the chamber body 100 and used for blowing gas to the upper surface of the wafer located on the wafer support seat 200.

[0056] The semiconductor cleaning device disclosed by the embodiment of the present application can blow gas to the upper surface of the wafer on the wafer support seat 200 through the first blowing structure 600, so that the cleaning liquid can be blown away and the volatilization of the cleaning liquid is accelerated, thereby improving the drying efficiency of the semiconductor cleaning device on the wafer.

[0057] Optionally, the semiconductor cleaning device can further include a second blowing structure 700, which can be arranged on the wafer support seat 200, and the second blowing structure 700 can be used to blow gas to the lower surface of the wafer on the wafer support seat 200. The lower surface of the wafer and the upper surface of the wafer are distributed in opposite directions, and the upper surface of the wafer is opposite to the air supply device 300.

[0058] The semiconductor cleaning device disclosed by the embodiment of the present application can blow gas to the lower surface of the wafer on the wafer support seat 200 through the second blowing structure 700, so that the cleaning liquid flowing to the lower surface of the wafer can be blown away, thereby preventing the cleaning liquid from polluting the back surface of the wafer.

[0059] In an optional embodiment, the semiconductor cleaning device can further include a liquid recovery device 810 and a first pipeline 820. The liquid recovery device 810 can be arranged in the chamber body 100, and the liquid recovery device 810 can have an annular structure and be arranged around the wafer support seat 200. The liquid recovery device 810 can have an annular inner cavity 811, an annular inlet 812 communicating with the annular inner cavity 811, and an annular outlet 813 communicating with the annular inner cavity. The annular inlet 812 can be arranged around the carrying portion 210 of the wafer support seat 200, and the first pipeline 820 has an annular receiving portion 821 which communicates with the annular outlet 813 through the bottom wall of the chamber body 100. The carrying portion 210 is used to carry the wafer.

[0060] It should be noted that during the cleaning process, the wafer support seat 200 drives the wafer to rotate together, so as to throw the liquid on the upper surface of the wafer. The semiconductor cleaning device disclosed by the embodiment of the present application can arrange the annular inlet 812 of the liquid recovery device 810 around the carrying portion 210 of the wafer support seat 200, so as to collect the liquid thrown from the upper surface of the wafer. Moreover, the gas in the columnar region of the chamber body 100 opposite to the wafer support seat 200 can enter the annular inner cavity 811 from the annular inlet 812, and be discharged from the annular outlet 813 to the first pipeline 820, and then to the factory end.

[0061] Optionally, the semiconductor cleaning apparatus can further comprise a first pressure sensor 840 and a first pressure adjusting device 850, both of which are arranged in the first pipeline 820, and the first pressure adjusting device 850 is configured to adjust the pressure in the first pipeline 820 according to the pressure detected by the first pressure sensor 840. Since the first pipeline 820 is in communication with the interior of the chamber body 100, the pressure in the chamber body 100 can be adjusted by adjusting the pressure in the first pipeline 820.

[0062] Further, the semiconductor cleaning apparatus can further comprise a second pipeline 830, and the bottom wall of the chamber body 100 can be provided with a plurality of exhaust portions 110, which can be arranged around the liquid recovery device 810, and the second pipeline 830 can be in communication with the plurality of exhaust portions 110. The plurality of exhaust portions 110 can be uniformly distributed around the liquid recovery device 810.

[0063] The semiconductor cleaning apparatus disclosed in the embodiments of the present application can make the gas in the columnar region of the chamber body 100 opposite to the wafer support seat 200 enter the second pipeline 830 through the exhaust portions 110 and then be exhausted to the factory end by arranging the second pipeline 830 and the plurality of exhaust portions 110 around the liquid recovery device 810. Since the plurality of exhaust portions 110 are arranged around the liquid recovery device 810, the gas in the chamber body 100 can be exhausted to the second pipeline 830 from multiple positions, thereby facilitating the uniformity of the gas distribution in the chamber body 100.

[0064] Optionally, the semiconductor cleaning apparatus can further comprise a second pressure sensor 860 and a second pressure adjusting device 870, both of which can be arranged in the second pipeline 830, and the second pressure adjusting device 870 is configured to adjust the pressure in the second pipeline 830 according to the pressure detected by the second pressure sensor 860. Since the second pipeline 830 is in communication with the interior of the chamber body 100, the pressure in the chamber body 100 can be controlled by adjusting the pressure in the second pipeline 830.

[0065] Specifically, in the extension direction of the central axis of the annular heating member 321a, the projection of the outermost annular heating member 321a in the plurality of annular heating members 321a can be greater than or equal to the projection of the wafer support seat 200, so that the adjustment range of the plurality of annular heating members 321a can cover the entire upper surface of the wafer, thereby improving the ability to adjust the temperature of the wafer.

[0066] It should be noted that the first purge structure 600 and the second purge structure 700 can blow nitrogen, of course, the first purge structure 600 and the second purge structure 700 can also blow other inert gases, the gas blown by the first purge structure 600 and the second purge structure 700 is not limited in the embodiment of the application.

[0067] The different optimization features between the various embodiments are mainly described in the above embodiment of the utility model, and the various embodiments can be combined to form a better embodiment as long as they are not contradictory.

[0068] The embodiments of the utility model are described above in combination with the drawings, but the utility model is not limited to the above specific embodiments, and the above specific embodiments are only illustrative but not restrictive, and those skilled in the art can make many forms under the inspiration of the utility model without departing from the scope of the utility model and the protection scope of the claims, which all belong to the protection of the utility model.

Claims

1. An air supply device for installation on top of a chamber body (100) of a semiconductor cleaning apparatus, and opposite to a wafer support (200) located within the chamber body (100), characterized in that, The air supply device (300) includes a fan module (310) and a heating module (320); The fan module (310) and the heating module (320) are stacked, and the heating module (320) is located on the air outlet side of the fan module (310). The heating module (320) includes a first heating component (321), which includes multiple annular heating elements (321a). The multiple annular heating elements (321a) are sequentially nested, and there is an air passage gap between two adjacent annular heating elements (321a). The annular heating elements (321a) are located on the side of the fan module (310) facing the wafer support (200), and the central axis of the annular heating element (321a) coincides with the central axis of the wafer support (200).

2. The air supply device according to claim 1, characterized in that, The heating module (320) also includes a plurality of second heating components (322), which are symmetrically disposed outside the outermost annular heating element (321a).

3. The air supply device according to claim 2, characterized in that, The air supply device (300) further includes a flow equalization module (330), which is located on the side of the heating module (320) away from the fan module (310). The flow equalization module (330) includes a flow equalization plate (331), which has a plurality of flow equalization holes (331a).

4. The air supply device according to claim 3, characterized in that, The flow equalization plate (331) has a central region (3311) and an edge region (3312) surrounding the central region (3311). The diameter of the flow equalization hole (331a) in the central region (3311) is larger than the diameter of the flow equalization hole (331a) in the edge region (3312). The projection of the central region (3311) covers the wafer support (200) in the direction of extension of the central axis of the wafer support (200).

5. The air supply device according to claim 3, characterized in that, The air supply device (300) further includes a first filter module (340), which is located between the heating module (320) and the flow equalization module (330).

6. The air supply device according to claim 1, characterized in that, The air supply device (300) further includes a second filter module (350), which is located on the air inlet side of the fan module (310).

7. A semiconductor cleaning device, characterized in that, The device includes a chamber body (100), a wafer support (200) disposed within the chamber body (100), a spray structure (400), and an air supply device (300) as described in any one of claims 1 to 6. The air supply device (300) is installed on the top of the chamber body (100) and opposite to the wafer support (200). The annular heating element (321a) is located on the side of the fan module (310) facing the wafer support (200). The central axis of the annular heating element (321a) coincides with the central axis of the wafer support (200). The spray structure (400) is disposed within the chamber body (100) and is used to spray cleaning fluid onto the upper surface of the wafer located on the wafer support (200).

8. The semiconductor cleaning equipment according to claim 7, characterized in that, The semiconductor cleaning equipment also includes a control module, wherein the spray structure (400) and the plurality of annular heating elements (321a) are all connected to the control module, and the control module is used to control the heating power of the plurality of annular heating elements (321a) according to the spray position of the spray structure (400) on the wafer.

9. The semiconductor cleaning equipment according to claim 7, characterized in that, The semiconductor cleaning equipment also includes a control module and a temperature detection module (500). The temperature detection module (500) is used to detect the actual temperature of the wafer at different radial positions. The temperature detection module (500) and the plurality of annular heating elements (321a) are all connected to the control module. The control module is used to control the heating power of the plurality of annular heating elements (321a) according to the detected actual temperature of the wafer at different radial positions.

10. The semiconductor cleaning equipment according to claim 7, characterized in that, The semiconductor cleaning equipment further includes a first purging structure (600), which is disposed in the chamber body (100) and is used to blow gas onto the upper surface of the wafer located on the wafer support (200).

11. The semiconductor cleaning equipment according to claim 7, characterized in that, The semiconductor cleaning equipment further includes a second purging structure (700), which is disposed on the wafer support (200) and is used to blow gas onto the lower surface of the wafer located on the wafer support (200).

12. The semiconductor cleaning equipment according to claim 7, characterized in that, The semiconductor cleaning equipment further includes a liquid recovery device (810) and a first pipe (820). The liquid recovery device (810) is located inside the chamber body (100). The liquid recovery device (810) has an annular structure and is arranged around the wafer support (200). The liquid recovery device (810) has an annular inner cavity (811), an annular inlet (812) communicating with the annular inner cavity (811), and an annular outlet (813) communicating with the annular inner cavity. The annular inlet (812) surrounds the support portion (210) of the wafer support (200). The first pipe (820) has an annular receiving portion (821). The annular receiving portion (821) passes through the bottom wall of the chamber body (100) and communicates with the annular outlet (813).

13. The semiconductor cleaning equipment according to claim 12, characterized in that, The semiconductor cleaning equipment further includes a first pressure sensor (840) and a first pressure regulating device (850). The first pressure sensor (840) and the first pressure regulating device (850) are both located in the first pipe (820). The first pressure regulating device (850) is used to regulate the pressure in the first pipe (820) according to the pressure detected by the first pressure sensor (840).

14. The semiconductor cleaning apparatus according to claim 13, characterized in that, The semiconductor cleaning equipment also includes a second pipe (830), and the bottom wall of the chamber body (100) is provided with a plurality of exhaust sections (110), which surround the liquid recovery device (810). The second pipe (830) is connected to the plurality of exhaust sections (110).

15. The semiconductor cleaning apparatus according to claim 14, characterized in that, The semiconductor cleaning equipment further includes a second pressure sensor (860) and a second pressure regulating device (870). The second pressure sensor (860) and the second pressure regulating device (870) are both located in the second pipe (830). The second pressure regulating device (870) is used to regulate the pressure in the second pipe (830) according to the pressure detected by the second pressure sensor (860).

16. The semiconductor cleaning apparatus according to claim 7, characterized in that, In the direction of extension of the central axis of the annular heating element (321a), the projection of the outermost annular heating element (321a) among the plurality of annular heating elements (321a) is greater than or equal to the projection of the wafer support (200).

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