Bearing device for epitaxial growth of silicon carbide
By setting up positioning grooves and positioning blocks in the silicon carbide epitaxial growth support device, the problem of SiC wafers sliding out or jumping out was solved, the stability of the device and the smooth progress of epitaxial growth were achieved, and production efficiency and product quality were improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-31
- Publication Date
- 2026-03-20
AI Technical Summary
SiC wafers are prone to slipping or jumping out of the graphite tray under external forces, resulting in damage or loss, which affects the smooth progress of the epitaxial growth process and production efficiency.
A silicon carbide epitaxial growth support device was designed, including a graphite tray, a support stage, an outer limiting ring, an outer support ring, and a support limiting ring. By setting positioning grooves and positioning blocks between the components, the stability of the device and the limiting support of the wafer are ensured.
It improves the stability and quality of the epitaxial growth process, prevents wafer slippage or detachment, and enhances production efficiency and product yield.
Smart Images
Figure CN224022225U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to a bearing device technical field, concretely is silicon carbide epitaxial growth bearing device. BACKGROUND
[0002] Silicon carbide epitaxial growth is a kind of technology for growing high-quality silicon carbide single crystal film on silicon carbide (SiC) substrate, and refers to the process of growing single crystal film matched with the lattice structure of substrate on silicon carbide substrate by gas deposition and other methods, which is called epitaxial layer, and has different physical, chemical or electrical properties from substrate, and is used to manufacture various high-performance semiconductor devices. In SiC epitaxial technology, graphite tray and its graphite ring bear the important responsibility of bearing and fixing wafer. However, due to the difference in thermal field between different chambers of CVD equipment, it will cause the warpage of SiC wafer to change, which not only affects the flatness and stability of wafer, but also makes SiC wafer more easily slip out or jump out of graphite tray when subjected to greater external force, such as air flow impact, mechanical vibration or improper operation. This situation not only may cause damage or loss of wafer, but also may affect the smooth progress of epitaxial growth process, reduce production efficiency and product yield. SUMMARY
[0003] The utility model discloses a silicon carbide epitaxial growth bearing device to solve the SiC wafer in the background art mentioned above when subjected to greater external force, such as air flow impact, mechanical vibration or improper operation, more easily slip out or jump out of graphite tray, this situation not only may cause damage or loss of wafer, but also may affect the smooth progress of epitaxial growth process, reduce production efficiency and product yield problem.
[0004] To achieve the above object, the utility model provides the following technical scheme: silicon carbide epitaxial growth bearing device, including:
[0005] Graphite tray;
[0006] Bearing table, bearing table sets up at the top of graphite tray, the top of graphite tray is equipped with the outer limiting ring that cooperates with bearing table;
[0007] Outer support ring, outer support ring sets up at the top of graphite tray;
[0008] Bearing limiting ring, bearing limiting ring sets up at the top of outer support ring, the top of bearing limiting ring equidistant fixed connection has a plurality of limiting lugs.
[0009] As a preferred scheme of the utility model: the outside of bearing table is equidistantly provided with a plurality of outer positioning grooves.
[0010] As a preferred scheme of the utility model: the inner side of the outer limiting ring is fixedly connected with multiple inner positioning blocks which cooperate with the outer positioning groove.
[0011] As a preferred scheme of the utility model: the outer side of the outer limiting ring is fixedly connected with multiple outer limiting blocks.
[0012] As a preferred scheme of the utility model: the inner side of the outer supporting ring is equidistantly provided with multiple inner limiting grooves which cooperate with the outer limiting blocks.
[0013] Compared with the prior art, the utility model has the beneficial effects that: the utility model cooperates the inner positioning blocks in the inner side of the outer limiting ring with the outer positioning groove on the outer side of the bearing table, ensures the accurate positioning between the bearing table and the outer limiting ring, cooperates the outer limiting blocks on the outer limiting ring with the inner limiting grooves in the inner side of the outer supporting ring, enhances the structural stability of the whole device, prevents the relative movement between the components in the use process, ensures the smooth progress of the epitaxial growth process, provides effective limiting support for the wafer in the epitaxial growth process through the setting of the bearing limiting ring and the limiting protrusion, ensures that the wafer is not displaced and dropped in the growth process due to external force, thereby improving the quality and efficiency of the epitaxial growth. BRIEF DESCRIPTION OF DRAWINGS
[0014] Fig. 1 It is the overall structure schematic view of the utility model;
[0015] Fig. 2 It is the bearing table plan view of the utility model;
[0016] Fig. 3 It is the outer limiting ring plan view of the utility model;
[0017] Fig. 4 It is the outer supporting ring plan view of the utility model.
[0018] In the drawing: 1, graphite tray; 2, bearing table; 3, outer positioning groove; 4, outer limiting ring; 5, outer limiting block; 6, inner positioning block; 7, outer supporting ring; 8, inner limiting groove; 9, bearing limiting ring; 10, limiting protrusion. DETAILED DESCRIPTION
[0019] The technical scheme in the embodiments of the utility model will be described clearly and completely below in conjunction with the drawings in the embodiments of the utility model, and obviously, the described embodiments are only part of the embodiments of the utility model, not all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by the person skilled in the art without creative labor belong to the protection scope of the utility model.
[0020] Please refer to Figs. 1 to 4The utility model provides a technical scheme: silicon carbide epitaxial growth bearing device, include: graphite tray 1, bearing station 2 fixed connection is in the top of graphite tray 1, the top of graphite tray 1 is equipped with with bearing station 2 cooperation's outer limiting ring 4, outside support ring 7 sets up in the top of graphite tray 1, bearing limiting ring 9 fixed connection is in the top of outside support ring 7, the top equidistance fixed connection of bearing limiting ring 9 has a plurality of limiting lugs 10, prevents effectively through limiting lug 10 to wafer slip, and then make in wafer epitaxial process, can avoid the damage caused by wafer slip, improve the quality and efficiency of epitaxial growth.
[0021] Wherein, the outside equidistance of bearing station 2 is equipped with a plurality of outer positioning groove 3, and the outer positioning groove 3 is equidistant on the outside of bearing station 2.
[0022] Wherein, the inside equidistance fixed connection of outer limiting ring 4 has a plurality of with outer positioning groove 3 cooperation's inner positioning block 6, and the inside equidistance fixed of outer limiting ring 4 has inner positioning block 6, and inner positioning block 6 is cooperated with outer positioning groove 3, and the placement position of outer limiting ring 4 on the outside of bearing station 2 is limited.
[0023] Wherein, the outside equidistance fixed connection of outer limiting ring 4 has a plurality of outer limiting block 5, and the outside equidistance fixed of outer limiting ring 4 has outer limiting block 5.
[0024] Wherein, the inside equidistance of outer support ring 7 is equipped with a plurality of with outer limiting block 5 cooperation's inner limiting slot 8, and when the outer support ring 7 is installed on the outside of outer limiting ring 4, the inner limiting slot 8 in the inside of outer support ring 7 is cooperated with the outer limiting block 5 on the outside of outer limiting ring 4, and the outer support ring 7, bearing limiting ring 9 is stably placed.
[0025] Specifically, in use, the top bearing station 2 of graphite tray 1 is cooperated with the inside of outer limiting ring 4 and is installed, each inner positioning block 6 fixed in the inside of outer limiting ring 4 is cooperated with the outer positioning groove 3 on the outside of bearing station 2, the outer support ring 7 is installed on the outside of outer limiting ring 4, each inner limiting slot 8 in the inside of outer support ring 7 is cooperated with each outer limiting block 5 on the outside of outer limiting ring 4, and the position of outer support ring 7, bearing limiting ring 9 and limiting lug 10 is stably limited, when wafer appears edge warping phenomenon due to uneven temperature field, bearing limiting ring 9 and limiting lug 10 can play the blocking effect, even under the condition of external force, wafer can be effectively prevented from slipping out of bearing limiting ring 9. In this way, not only can effectively protect wafer, reduce its risk of falling and cracking, but also can avoid wafer from being contaminated due to slip.
[0026] In the description of the utility model, need understanding is, the term "coaxial", "bottom", "one end", "top", "middle", "the other end", "upper", "one side", "top", "inner", "front", "central", "both ends" and so on indicate the orientation or positional relationship is based on the orientation or positional relationship shown in the drawing, only for the convenience of describing the utility model and simplifying the description, and not indicate or imply the device or element indicated must have a particular orientation, with a particular orientation structure and operation, therefore cannot be understood as a restriction on the utility model.
[0027] In addition, the terms "first", "second", "third", "fourth" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features, therefore, the features limited by "first", "second", "third", "fourth" can be explicitly or implicitly include at least one of the features.
[0028] In the utility model, unless otherwise expressly provided and limited, the terms "installation", "arrangement", "connection", "fixing", "screw connection" and so on should be understood broadly, for example, can be fixedly connected, can also be detachably connected, or integrated, can be mechanically connected, can also be electrically connected, can be directly connected, can also be indirectly connected through intermediate medium, can be the communication or interaction relationship between two elements, unless otherwise expressly limited, for ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.
[0029] Although the embodiments of the utility model have been shown and described, for ordinary skilled in the art, it can be understood that the embodiments can be changed, modified, replaced and changed in various ways without departing from the principles and spirits of the utility model, the scope of the utility model is defined by the appended claims and its equivalents.
Claims
1. A silicon carbide epitaxial growth support device, characterized in that, include: Graphite tray (1); A support platform (2) is provided on the top of a graphite tray (1), and an outer limiting ring (4) that cooperates with the support platform (2) is provided above the graphite tray (1). An outer support ring (7) is positioned above the graphite tray (1); The bearing limiting ring (9) is set on the top of the outer support ring (7), and multiple limiting protrusions (10) are fixedly connected at equal intervals on the top of the bearing limiting ring (9).
2. The silicon carbide epitaxial growth support device according to claim 1, characterized in that: Multiple external positioning slots (3) are equidistantly provided on the outer side of the support platform (2).
3. The silicon carbide epitaxial growth support device according to claim 2, characterized in that: The inner side of the outer limiting ring (4) is fixedly connected with multiple inner positioning blocks (6) that cooperate with the outer positioning groove (3).
4. The silicon carbide epitaxial growth support device according to claim 1, characterized in that: Multiple outer limiting blocks (5) are fixedly connected at equal intervals on the outer side of the outer limiting ring (4).
5. The silicon carbide epitaxial growth support device according to claim 4, characterized in that: The outer support ring (7) has multiple inner limiting grooves (8) that cooperate with the outer limiting block (5) at equal intervals on its inner side.