Mass analyzer and ion implantation equipment

Abstract

The utility model discloses a mass analyzer and ion implantation equipment, and the mass analyzer comprises a cavity which is internally provided with an ion channel for the circulation of an ion beam current; the beam current detection device is movably installed in the ion channel, the beam current detection device comprises a beam current receiving assembly used for receiving the ion beam current, and when the beam current detection device is in a detection state, the beam current receiving assembly blocks the ion channel, so that the first surface of the beam current receiving assembly receives the ion beam current; the purpose of detecting the beam current in the middle section of the beam current is achieved, when the ion beam current detection result does not meet the preset requirement and the beam current needs to be adjusted, due to the fact that the number of parts needing to be adjusted in front of the mass analyzer is small, the difficulty of adjusting the ion beam current is reduced, and the efficiency of adjusting the ion beam current is also improved.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor process equipment, and particularly relates to a quality analyzer and an ion implantation device. Background Technology

[0002] With the development of the semiconductor industry, the requirements for ion implantation processes are becoming increasingly stringent. In ion implantation equipment, in order to ensure that the beam reaches the predetermined energy, dose, angle, and other requirements before being implanted into the workpiece, multiple adjustment devices (such as mass analyzers) are usually required to adjust the beam flow path.

[0003] Furthermore, a beam detection device is installed at the end of the beam's flow path to detect the beam. Based on the detection results, the beam is adjusted using the aforementioned multiple adjustment devices to ensure that the beam meets predetermined requirements for energy, dose, angle, etc. However, since the beam passes through multiple adjustment devices along its flow path, it takes a considerable amount of time to determine the parameters that need adjustment, making the debugging process quite complex.

[0004] Therefore, how to reduce the burden of uniformity adjustment at the end of the beam flow path in order to improve the beam adjustment efficiency has become an urgent problem to be solved. Utility Model Content

[0005] The problem solved by this invention is to provide a quality analyzer and an ion implantation device to improve beam regulation efficiency.

[0006] To address the aforementioned problems, this utility model provides a quality analyzer, comprising: a cavity having an ion channel for the flow of an ion beam; and a beam detection device movably installed within the ion channel, the beam detection device including a beam receiving component having a first surface for receiving the ion beam. When the beam detection device is in a detection state, the beam receiving component blocks the ion channel so that the first surface of the beam receiving component receives the ion beam.

[0007] Optionally, when the beam detection device is in a non-detection state, the beam receiving component is positioned close to the inner wall of the ion channel relative to its position in the detection state.

[0008] Optionally, the beam detection device is rotatably or movablely engaged with the inner wall of the ion channel of the cavity; the beam detection device further includes a driving mechanism, which is mounted on the cavity and connected to the beam receiving component, and is used to drive the beam receiving component to rotate or move so that the beam detection device switches between a detection state and a non-detection state.

[0009] Optionally, the beam receiving assembly further includes a protective shell covering the remaining surfaces of the beam receiving assembly, excluding the first surface.

[0010] Optionally, the protective shell is a graphite plate protective shell, a silicon nitride protective shell, a silicon carbide protective shell, or a silicon protective shell.

[0011] Optionally, the beam detection device is located at the end of the ion channel.

[0012] Optionally, the quality analyzer further includes an analysis slit located at the end of the ion channel and on the side of the beam detection device.

[0013] Optionally, the beam detection device is located on the side of the analysis slit closer to the interior of the ion channel.

[0014] Optionally, the beam receiving assembly includes: a plurality of Faraday cups, wherein the plurality of Faraday cups are arranged sequentially along the detection direction of the ion beam in the ion channel, each of the Faraday cups has a first surface for receiving the ion beam, and the first surface of each of the Faraday cups constitutes the first surface of the beam receiving assembly, wherein the edges of the projected patterns of adjacent Faraday cups overlap on a projection plane parallel to any of the first surfaces.

[0015] Optionally, the Faraday cup includes: a first Faraday cup; and a second Faraday cup located between adjacent first Faraday cups, wherein the first face of the second Faraday cup is partially covered by the adjacent first Faraday cup; the dimensional relationship between the first faces of the first Faraday cup and the first faces of the second Faraday cup satisfies one of the following requirements: the first Faraday cup and the second Faraday cup are the same size; when there are multiple second Faraday cups, the size of the area of ​​each second Faraday cup not covered by the first Faraday cup is equal; and the size of the area of ​​the second Faraday cup not covered by the first Faraday cup is equal to the size of the first Faraday cup.

[0016] Accordingly, this utility model embodiment also provides an ion beam generating device, including: an ion source; an extraction electrode, the extraction electrode being used to extract an ion beam from the ion source; and a quality analyzer, located on the side of the extraction electrode facing away from the ion source, for receiving the ion beam extracted by the extraction electrode.

[0017] Accordingly, this utility model embodiment also provides an ion implantation device, including: the ion beam generating device described in this utility model embodiment.

[0018] Compared with the prior art, the technical solution of this utility model embodiment has the following advantages:

[0019] The quality analyzer provided in this embodiment includes a cavity with an ion channel for the flow of an ion beam. A beam detection device is movably installed within the ion channel. The beam detection device includes a beam receiving component with a first surface for receiving the ion beam. When the beam detection device is in a detection state, the beam receiving component blocks the ion channel so that the first surface of the beam receiving component receives the ion beam. Since the beam detection device is movably installed within the ion channel, it can detect the ion beam at the end of the quality analyzer as the ion beam flows through it, thus achieving the purpose of detection in the middle of the beam. When the ion beam detection result does not meet the preset requirements and the beam needs to be adjusted, the number of components that need to be adjusted in front of the quality analyzer is small, thereby reducing the difficulty of adjusting the ion beam and improving the efficiency of adjusting the ion beam. In addition, the movable installation of the beam detection device within the ion channel allows it to be moved to a position that does not affect the ion beam flow when ion beam detection is not required, thereby reducing the impact of the beam detection device on the ion beam flow. Attached Figure Description

[0020] Figure 1 A top view of the positional relationship between the mass analyzer, the lead-in power supply, and the ion source in this embodiment of the present invention;

[0021] Figure 2 This is a magnified view of a portion of region A in the image;

[0022] Figure 3 This is a perspective view of the beam detection device according to an embodiment of the present invention. Detailed Implementation

[0023] As can be seen from the background technology, the efficiency of beam adjustment still needs to be improved.

[0024] To address the aforementioned technical problems, this utility model provides a quality analyzer, comprising: a cavity having an ion channel for the flow of an ion beam; and a beam detection device movably installed within the ion channel, the beam detection device including a beam receiving component having a first surface for receiving the ion beam. When the beam detection device is in a detection state, the beam receiving component blocks the ion channel so that the first surface of the beam receiving component receives the ion beam.

[0025] The solution disclosed in this embodiment includes a cavity with an ion channel for the flow of an ion beam, and a beam detection device movably installed within the ion channel. The beam detection device includes a beam receiving component with a first surface for receiving the ion beam. When the beam detection device is in a detection state, the beam receiving component blocks the ion channel so that the first surface of the beam receiving component receives the ion beam. Since the beam detection device is movably installed within the ion channel, it can detect the ion beam at the end of the quality analyzer as the ion beam flows through it, thus achieving the purpose of detection in the middle of the beam. When the ion beam detection result does not meet the preset requirements and the beam needs to be adjusted, the number of components that need to be adjusted in front of the quality analyzer is small, thereby reducing the difficulty of adjusting the ion beam and improving the efficiency of adjusting the ion beam. In addition, the movable installation of the beam detection device within the ion channel allows it to be moved to a position that does not affect the ion beam flow when ion beam detection is not required, thereby reducing the impact of the beam detection device on the ion beam flow.

[0026] To make the above-mentioned objectives, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0027] Figure 1 A top view schematic diagram of the positional relationship between the mass analyzer, the power supply, and the ion source in this embodiment of the present invention. Figure 2 This is a magnified view of a portion of region A in the image. Figure 3 This is a perspective view of the beam detection device according to an embodiment of the present invention.

[0028] refer to Figures 1 to 3 In this embodiment, the quality analyzer 30 includes: a cavity 100, in which an ion channel 101 for the flow of an ion beam; and a beam detection device 120, movably installed within the ion channel 101. The beam detection device 120 includes a beam receiving component 121, which has a first surface 1211 for receiving the ion beam. When the beam detection device 120 is in a detection state, the beam receiving component 121 blocks the ion channel 101 so that the first surface 1211 of the beam receiving component 121 receives the ion beam.

[0029] The beam detection device 120 being in the detection state means that the beam detection device 120 needs to perform ion beam detection.

[0030] It is understood that when the beam receiving component 121 blocks the ion channel 101, it means that the beam receiving component 121 is in a position that can block the ion beam from continuing to travel. At this time, there may still be a gap between the beam detection device 120 and the inner wall of the ion channel 101.

[0031] With a gap between the beam detection device 120 and the inner wall of the ion channel 101, it is convenient for the beam detection device 120 to switch between a detection state and a non-detection state.

[0032] In this embodiment, the quality analyzer 30 further includes an electromagnet structure 110 surrounding the outer wall of the cavity 100.

[0033] The electromagnet structure 110 is used to form a specific magnetic field within the ion channel 101 to ensure that the preset ions in the ion beam can be deflected to a specified direction.

[0034] Since the beam detection device 120 is movably installed within the ion channel 101, it can detect the ion beam at the end of the mass analyzer 30 when the ion beam flows through it, thus achieving the purpose of detection in the middle of the beam. When the ion beam detection result does not meet the preset requirements and the beam needs to be adjusted, the number of components that need to be adjusted in front of the mass analyzer 30 is small, thereby reducing the difficulty of adjusting the ion beam and improving the efficiency of adjusting the ion beam. In addition, since the beam detection device 120 is movably installed within the ion channel 101, it can be moved to a position that does not affect the ion beam flow when the beam detection device 120 is not needed, thereby helping to reduce the impact of the beam detection device 120 on the ion beam flow.

[0035] In this embodiment, the beam receiving component 121 is rotatably engaged with the inner wall of the ion channel 101 of the cavity 100, and the beam receiving component 121 also has a second surface 1212 facing away from the first surface 1211 (e.g., Figure 2 As shown, when the beam detection device 120 is in a non-detection state, the first surface 1211 of the beam receiving component 121 is close to the inner wall of the ion channel 101 of the cavity 100, or the second surface 1212 of the beam receiving component 121 is close to the inner wall of the ion channel 101 of the cavity 100. This helps to reduce the difficulty of moving the beam detection device 120 to a position that does not affect the flow of the ion beam.

[0036] The term "non-detection state" for the beam detection device 120 refers to a state in which the beam detection device 120 is not required to perform ion beam detection.

[0037] The first surface 1211 of the beam receiving component 121 being close to the inner wall of the ion channel 101 of the cavity 100 means that, compared to when the beam detection device 120 is in a detection state, when the beam detection device 120 is in a non-detection state, the first surface 1211 of the beam receiving component 121 is closer to the inner wall of the ion channel 101. Correspondingly, the second surface 1212 of the beam receiving component 121 being close to the inner wall of the ion channel 101 of the cavity 100 means that, compared to when the beam detection device 120 is in a detection state, when the beam detection device 120 is in a non-detection state, the second surface 1212 of the beam receiving component 121 is closer to the inner wall of the ion channel 101.

[0038] It is understood that the first surface 1211 or the second surface 1212 is close to the inner wall of the ion channel 101 so that the beam detection device 120 does not affect the ion beam flow when the beam detection device 120 is in a non-detection state. Therefore, the first surface 1211 or the second surface 1212 can be completely attached to the inner wall of the ion channel 101, or the first surface 1211 or the second surface 1212 can be partially attached to the inner wall of the ion channel 101, or, compared to when the beam detection device 120 is in a detection state, when the beam detection device 120 is in a non-detection state, the first surface 1211 or the second surface 1212 is located closer to the inner wall of the ion channel 101.

[0039] As an example, the angle between the beam detection device 120 in the detection state and the beam detection device 120 in the non-detection state is 90°.

[0040] Specifically, the beam detection device 120 further includes a drive mechanism 123, which is mounted on the cavity 100 and connected to the beam receiving component 121. The drive mechanism 123 is used to drive the beam receiving component 121 to rotate, so that the beam detection device 120 switches between a detection state and a non-detection state.

[0041] The drive mechanism 123 drives the beam receiving component 121 to rotate, which helps to reduce the difficulty of the beam detection device 120 switching between detection and non-detection states.

[0042] More specifically, the drive mechanism 123 includes a rotating shaft 1223, which is connected to the beam receiving assembly 121.

[0043] As an example, the drive mechanism 123 further includes a motor (not shown), the drive shaft of which is drivenly connected to the rotating shaft 1223 to drive the rotating shaft 1223 to rotate. 。

[0044] The motor improves the ease of switching the beam detection device 120 between detection and non-detection states, and correspondingly improves the efficiency of switching the beam detection device 120 between detection and non-detection states.

[0045] It is understood that the drive shaft of the motor is driven to drive the rotating shaft 1223. This can be because the drive shaft of the motor drives the rotating shaft 1223 to rotate via other drive mechanisms, or the drive shaft of the motor directly drives the rotating shaft 1223 to rotate.

[0046] The motor 130 is either a stepper motor or a servo motor.

[0047] In other embodiments, the beam receiving component 121 and the inner wall of the ion channel 101 of the cavity 100 can also be in a movable fit. For example, a receiving groove is formed by the inner wall of one side of the ion channel 101 protruding outward from the cavity 100. In the detection state, the beam receiving component 121 moves out of the receiving groove and onto the beam path under the drive of the driving mechanism 123. The beam receiving component 121 blocks the ion channel 101, and the ion beam is received by the beam receiving component. In the non-detection state, the beam receiving component 121 is housed in the receiving groove under the drive of the driving mechanism 123, which does not affect the movement of ions (this embodiment is not shown).

[0048] In this embodiment, the beam receiving component 121 further includes a protective shell 140, which covers the remaining surfaces of the beam receiving component 121 except for the first surface 1211.

[0049] The protective shell 140 helps reduce the probability of metal contamination caused by the ion beam impacting the metal components of the beam receiving assembly 121 (e.g., the surfaces of the Faraday cup other than the first face) during the flow of the ion beam. It is understood that the protective shell is made of a non-metallic material.

[0050] Specifically, the protective shell 140 is a graphite plate protective shell. Graphite has good electrical conductivity and high temperature resistance, which helps to improve the service life of the protective shell 140. In other embodiments, the protective shell may also be a silicon nitride protective shell, a silicon carbide protective shell, or a silicon protective shell, or a protective shell made of other suitable non-metallic materials.

[0051] In this embodiment, the beam receiving component 121 includes a plurality of Faraday cups (not shown). In the ion channel 101, the plurality of Faraday cups are arranged sequentially along the detection direction of the ion beam. Each Faraday cup has a first surface 1211 for receiving the ion beam. The first surface 1211 of each Faraday cup constitutes the first surface 1211 of the beam receiving component 121. On a projection plane parallel to any of the first surfaces 1211, the edges of the projection patterns of adjacent Faraday cups overlap with each other.

[0052] It should be noted that the detection direction refers to the direction in which the uniformity of the ion beam needs to be detected. For example, the ion beam is a strip beam with a long cross-sectional shape. The long side of the strip beam is parallel to the first direction Y, meaning the length direction of the strip beam is the first direction Y. The short side of the strip beam is parallel to the second direction X, meaning the width direction of the strip beam is the second direction X. The first direction Y is perpendicular to the second direction X. When it is necessary to detect the uniformity of the ion beam in the first direction Y, the first direction Y is the detection direction. When it is necessary to detect the uniformity of the ion beam in the second direction X, the second direction X is the detection direction.

[0053] It should also be noted that the direction perpendicular to both the first direction Y and the second direction X is the third direction Z.

[0054] The Faraday cup is used to receive the ion beam to generate an electric current signal.

[0055] On a projection plane parallel to any of the first surfaces 1211, the edges of the projection patterns of adjacent Faraday cups overlap, enabling the beam receiving component 121 to receive more ions, thereby improving the accuracy of ion beam detection.

[0056] Specifically, the Faraday cup includes: a plurality of spaced-apart first Faraday cups 1215; and a second Faraday cup 1216 located between adjacent first Faraday cups 1215, wherein the first surface 1211 of the second Faraday cup 1216 is partially covered by the adjacent first Faraday cup 1215; the dimensional relationship between the first Faraday cup 1215 and the second Faraday cup 1216 satisfies one of the following requirements: the first Faraday cup 1215 and the second Faraday cup 1216 are the same size; when there are multiple second Faraday cups 1216, the size of the area of ​​each second Faraday cup 1216 not covered by the first Faraday cup 1215 is equal; and the size of the area of ​​the second Faraday cup 1216 not covered by the first Faraday cup 1215 is equal to the size of the first Faraday cup 1215.

[0057] Wherein, the dimensions of the first Faraday cup 1215 refer to the length and width of the first face 1211 of the first Faraday cup 1215; the dimensions of the second Faraday cup 1216 refer to the length and width of the first face 1211 of the second Faraday cup 1216.

[0058] Accordingly, the dimensions of the area of ​​the second Faraday cup 1216 not covered by the first Faraday cup 1215 refer to the length and width of the area of ​​the first surface 1211 of the second Faraday cup 1216 not covered by the first Faraday cup 1215.

[0059] It is understood that the first faces 1211 of the plurality of first Faraday cups 1215 are located in the same plane, and the second Faraday cup 1216 is located on one side of the plane where the first faces 1211 of the plurality of first Faraday cups are located, corresponding exactly to the interval between adjacent first Faraday cups 1215, and the projection pattern of the second Faraday cup 1216 on the plane where the first faces 1211 of the first Faraday cup 1215 are located at least covers the interval between adjacent first Faraday cups 1215.

[0060] When the first Faraday cup 1215 has the same size, the current values ​​obtained by each of the first Faraday cups can be compared to obtain the detection results of the ion beam current intersecting with the first Faraday cup 1215.

[0061] When the first Faraday cup 1215 and the second Faraday cup 1216 are of the same size, and there are multiple second Faraday cups 1216, the current values ​​obtained by each second Faraday cup 1216 can be compared to obtain the detection results of the ion beam current intersecting with the second Faraday cup 1216. Thus, based on the current values ​​obtained by the first Faraday cup 1215 and the second Faraday cup 1216, the overall uniformity result of the ion beam current can be obtained.

[0062] When the size of the area of ​​the second Faraday cup 1216 not covered by the first Faraday cup 1215 is equal to the size of the first Faraday cup 1215, the current values ​​obtained by each of the first Faraday cups 1215 and the current obtained by the second Faraday cup 1216 can be compared uniformly to obtain the overall uniformity result of the ion beam. This simplifies the process of obtaining the overall uniformity result of the ion beam and also improves the accuracy of the obtained uniformity result of the ion beam.

[0063] The fact that the size of the first Faraday cup is the same as that of the second Faraday cup also helps to reduce the difficulty and cost of manufacturing the Faraday cup.

[0064] More specifically, the beam receiving assembly 121 further includes: a plurality of connecting terminals 1217, respectively disposed on the second surface 1212 of the Faraday cup (e.g., on the second surface 1212 of the first Faraday cup 1215 and the second Faraday cup 1216); and a connector 1218, located on the side of the Faraday cup and the connecting terminals 1217, and fixedly connected to the Faraday cup.

[0065] It is understood that the connector 1218 is insulated from the Faraday cup and the connecting terminal 1217.

[0066] The connection terminal is used to connect to the transmission wire to transmit the current signal generated inside the Faraday cup to an external measuring device, thereby obtaining the result of detecting the ion beam.

[0067] The connector is used to support the Faraday cup (e.g., the first Faraday cup 1215, the second Faraday cup 1216).

[0068] In this embodiment, the driving mechanism 123 includes a rotating shaft 1223. Accordingly, the bottom of the rotating shaft 1223 is connected to the connector 1218, and the rotating shaft 1223 drives the connector 1218 to rotate, thereby causing the beam receiving assembly 121 to rotate.

[0069] In this embodiment, the beam receiving assembly 121 further includes a protective shell 140, which covers the remaining surfaces of the beam receiving assembly 121 except for the first surface 1211. Correspondingly, the protective shell 140 also covers the exposed surface of the connector 1218.

[0070] In this embodiment, the beam detection device 120 is located at the end of the ion channel 101, which helps to further reduce the influence of the beam detection device 120 on the ion beam flow.

[0071] The term "end of ion channel 101" refers to the end of ion channel 101 that is away from the lead-out electrode 20 of the ion beam generator.

[0072] In this embodiment, the mass analyzer further includes an analysis slit 150, which is located at the end of the ion channel 101 and on the side of the beam detection device 120.

[0073] The analytical slit 150 is used to allow preset ions to pass through, thereby filtering out preset ions.

[0074] Specifically, the beam detection device 120 is located on the side of the analysis slit 150 near the interior of the ion channel 101, so that when the ion beam is detected, the first surface 1211 can receive more ions, thereby improving the accuracy of the ion beam detection results.

[0075] Accordingly, this utility model also provides an ion implantation device.

[0076] Reference Figures 1 to 3 In this embodiment, the ion implantation device includes: an ion source 10; an extraction electrode 20, which is used to extract an ion beam from the ion source 10; and a mass analyzer 30 as described in this embodiment of the present invention.

[0077] Since the beam detection device 120 is movably installed within the ion channel 101, it can detect the ion beam in a timely manner when the ion beam flows to the quality analyzer 30. The quality analyzer 30 is often close to the lead-out electrode 20 of the ion beam generator, resulting in fewer variables affecting the uniformity of the ion beam passing through the quality analyzer 30. This reduces the number of parameters that need to be adjusted when the ion beam detection result does not meet the preset requirements, thereby reducing the difficulty of adjusting the ion beam and improving the efficiency of adjusting the ion beam. Furthermore, the movable installation of the beam detection device 120 within the ion channel 101 allows it to be moved to a position that does not affect the ion beam flow when ion beam detection is not required, thus reducing the impact of the beam detection device 120 on the ion beam flow.

[0078] For a detailed description of the quality analyzer, please refer to the detailed description of the foregoing embodiments, which will not be repeated in this embodiment.

[0079] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A quality analyzer, characterized in that, include: A cavity having an ion channel for the flow of an ion beam; A beam detection device is movably installed within the ion channel. The beam detection device includes a beam receiving component, which has a first surface for receiving the ion beam. When the beam detection device is in detection mode, the beam receiving component blocks the ion channel so that the first surface of the beam receiving component receives the ion beam.

2. The quality analyzer as described in claim 1, characterized in that, When the beam detection device is in a non-detection state, the beam receiving component is positioned closer to the inner wall of the ion channel compared to its position in the detection state.

3. The quality analyzer as described in claim 2, characterized in that, The receiving component is rotatably or movablely engaged with the inner wall of the ion channel; the beam detection device further includes a driving mechanism, which is mounted on the cavity and connected to the beam receiving component. The driving mechanism is used to drive the beam receiving component to rotate or move, so that the beam detection device switches between a detection state and a non-detection state.

4. The quality analyzer as described in claim 1, characterized in that, The beam receiving assembly further includes a protective shell covering the remaining surfaces of the beam receiving assembly, excluding the first surface.

5. The quality analyzer as described in claim 4, characterized in that, The protective shell is a graphite plate protective shell, a silicon nitride protective shell, a silicon carbide protective shell, or a silicon protective shell.

6. The quality analyzer as described in claim 1, characterized in that, The beam detection device is located at the end of the ion channel.

7. The quality analyzer as described in claim 6, characterized in that, The quality analyzer further includes an analysis slit, located at the end of the ion channel and on the side of the beam detection device.

8. The quality analyzer as described in claim 7, characterized in that, The beam detection device is located on the side of the analysis slit near the interior of the ion channel.

9. The quality analyzer as described in claim 1, characterized in that, The beam receiving assembly includes a plurality of Faraday cups arranged sequentially along the detection direction of the ion beam in the ion channel. Each Faraday cup has a first surface for receiving the ion beam, and the first surface of each Faraday cup constitutes the first surface of the beam receiving assembly. On a projection plane parallel to any of the first surfaces, the edges of the projection patterns of adjacent Faraday cups overlap.

10. The quality analyzer as described in claim 9, characterized in that, The Faraday cup includes: a plurality of spaced-apart first Faraday cups; and a second Faraday cup located between adjacent first Faraday cups, wherein the first surface of the second Faraday cup is partially covered by the adjacent first Faraday cup. The dimensional relationship between the first facet of the first Faraday cup and the first facet of the second Faraday cup satisfies one of the following requirements: The first Faraday cup and the second Faraday cup are the same size. When there are multiple second Faraday cups, the size of the area of ​​each second Faraday cup not covered by the first Faraday cup is equal. The size of the area of ​​the second Faraday cup not covered by the first Faraday cup is equal to the size of the first Faraday cup.

11. An ion implantation device, characterized in that, include: Ion source; Extraction electrode, the extraction electrode being used to extract an ion beam from the ion source; The mass analyzer according to any one of claims 1 to 10 is located on the side of the extraction electrode facing away from the ion source, and is used to receive the ion beam extracted by the extraction electrode.

Images