Semiconductor production equipment

Abstract

The utility model provides semiconductor production equipment. The semiconductor production equipment comprises an etching cavity, a deaerator and a recycling mechanism, the deaerator is connected with the etching cavity, and the recycling mechanism is connected with the deaerator and comprises an oxidation-reduction reaction cavity. In practical application, the deaerator is used for deoxidizing the etching agent, so that the dissolved oxygen content of the etching agent in the etching cavity is reduced, the etching rate is increased, and the etching effect is improved; the recycling mechanism is used for recycling oxygen separated from the etching agent, carbon monoxide gas is oxidized into carbon dioxide in the oxidation-reduction reaction cavity through the recycled oxygen, the carbon dioxide is used for wafer cleaning, and the effect of saving energy is achieved.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the technical field of semiconductor manufacturing, specifically relates to a semiconductor production equipment. BACKGROUND

[0002] Tetramethylammonium hydroxide (TMAH) solution is a kind of reagent commonly used in semiconductor wet etching process, and is usually used for etching silicon.Tetramethylammonium hydroxide etching rate of silicon is related to temperature, and also related to the oxygen dissolution amount in solution, and generally the more dissolved oxygen in solution, the slower the etching rate of silicon. UTILITARY MODEL CONTENT

[0003] The utility model discloses a semiconductor production equipment, which aims to reduce the dissolved oxygen content in etchant and recycle the oxygen separated from the etchant.

[0004] To achieve the above object, the utility model provides a semiconductor production equipment, including etching cavity, oxygen remover and recycling mechanism, the oxygen remover is connected with the etching cavity, the recycling mechanism is connected with the oxygen remover, and includes oxidation-reduction reaction cavity.

[0005] Optionally, the recycling mechanism further includes a first heating portion, and the first heating portion is arranged at the oxidation-reduction reaction cavity.

[0006] Optionally, the recycling mechanism further includes a gas-liquid separation cavity and a second heating portion, the gas-liquid separation cavity is connected between the oxygen remover and the oxidation-reduction reaction cavity, and the second heating portion is arranged at the gas-liquid separation cavity.

[0007] The semiconductor production equipment further includes a valve assembly, the valve assembly includes a first valve and a second valve, the first valve is arranged between the oxygen remover and the etching cavity, and the second valve is arranged between the oxygen remover and the gas-liquid separation cavity.

[0008] Optionally, the recycling mechanism further includes a connecting pipe and a converging pipe, the oxidation-reduction reaction cavity is connected with the converging pipe, one end of the connecting pipe is connected with the gas-liquid separation cavity, and the other end of the connecting pipe is connected with the converging pipe.

[0009] Optionally, the recycling mechanism further includes a cooling portion, and the cooling portion is arranged at the connecting pipe and / or the converging pipe.

[0010] Optionally, the recycling mechanism further includes a concentration detection element, and the concentration detection element is arranged on the converging pipe.

[0011] Optionally, the oxygen remover is provided with a first outlet end and a second outlet end; the oxygen remover is connected with the etching cavity through the first outlet end, and the oxygen remover is connected with the gas-liquid separation cavity through the second outlet end.

[0012] The first valve is arranged at the first outlet end, and the second valve is arranged at the second outlet end.

[0013] Optionally, the oxygen remover is further provided with a first inlet end and a second inlet end; the oxygen remover is connected with an external etchant source through the first inlet end, and the oxygen remover is connected with an external deionized water supply source through the second inlet end.

[0014] The valve assembly further comprises a third valve and a fourth valve; the third valve is arranged at the first inlet end, and the fourth valve is arranged at the second inlet end.

[0015] Optionally, the oxygen remover is a molecular sieve oxygen remover.

[0016] Optionally, the oxygen remover comprises a shell, an oxygen removing agent and a third heating part; the shell is a hollow structure with an inner cavity; the oxygen removing agent is filled in the inner cavity; and the third heating part is arranged on the shell.

[0017] Compared with the prior art, the semiconductor production equipment has the following advantages:

[0018] The aforementioned semiconductor production equipment comprises an etching cavity, an oxygen remover and a recycling mechanism; the oxygen remover is connected with the etching cavity, the recycling mechanism is connected with the oxygen remover, and the recycling mechanism comprises an oxidation-reduction reaction cavity. In actual application, the etchant is deoxygenated by the oxygen remover, so that the oxygen dissolution amount of the etchant in the etching cavity is reduced, the etching rate is improved, and the etching effect is improved; the oxygen gas separated from the etchant is recycled by the recycling mechanism, and the recycled oxygen gas is used to oxidize carbon monoxide gas into carbon dioxide in the oxidation-reduction reaction cavity, so as to be used for wafer cleaning, thereby achieving the effect of saving energy. BRIEF DESCRIPTION OF DRAWINGS

[0019] The drawings are used for better understanding of the utility model and do not constitute undue limitation on the utility model. Among them:

[0020] Figure 1 is a structure schematic view of the semiconductor production equipment provided by the utility model according to an embodiment.

[0021] [The symbol explanation is as follows]:

[0022] 100 - etching chamber, 200 - oxygen remover, 210 - housing, 220 - oxygen removing agent, 230 - third heating portion, 300 - recycling mechanism, 310 - redox reaction chamber, 320 - first heating portion, 330 - gas-liquid separation chamber, 340 - second heating portion, 350 - connecting pipe, 360 - converging pipe, 370 - cooling portion, 380 - concentration detecting element, 400 - valve assembly, 410 - first valve, 420 - second valve, 430 - third valve, 440 - fourth valve, 450 - fifth valve, 10 - carbon monoxide catalyst, 20 - carbon monoxide gas source, 30 - etchant source, 40 - deionized water supply source. DETAILED DESCRIPTION

[0023] Other advantages and effects of the present application can be easily understood by those skilled in the art from the above description. The present application can also be implemented or applied in other different embodiments, and the details in the present description can be modified or changed based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the drawings provided in the present embodiment only schematically illustrate the basic concept of the present application, and thus the drawings only show the components related to the present application without being drawn according to the number, shape and size of the components in actual implementation. The type, number and proportion of the components in actual implementation can be randomly changed, and the layout type of the components can be more complicated.

[0024] In addition, each of the embodiments described below has one or more technical features, but this does not mean that all technical features in any embodiment must be implemented simultaneously or only one or all technical features in different embodiments can be implemented separately. In other words, under the premise of implementation, those skilled in the art can selectively implement part or all of the technical features in any embodiment or selectively implement a combination of part or all of the technical features in multiple embodiments according to the disclosure of the present application, based on design specifications or implementation needs, thereby increasing the flexibility of the implementation of the present application.

[0025] As used in this specification, the singular forms "a," "an" and "the" include plural referents unless the context clearly dictates otherwise. As used in this specification, the term "or" is generally employed in its sense of "and / or" unless the content clearly dictates otherwise, and the term "have" or "has" is generally employed in its sense of "have or has at least one" or "has or has at least one" unless the content clearly dictates otherwise. The term "mounting", "connected", "connection" should be understood broadly, for example, can be fixed connection, can also be detachable connection, or integrally connected. It can be mechanical connection, or electrical connection. It can be directly connected, or indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction relationship between two elements. The relationship terms such as "first", "second" and the like are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between the entities or operations, nor indicate or imply relative importance or implicitly indicate the number of technical features indicated. It should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential" and the like are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0026] In order to make the purpose, advantages and characteristics of the present application clearer, the present application will be further described in detail below in combination with the drawings. It should be noted that the drawings are all very simplified and use non-precise proportions, and are only used to facilitate and clarify the purpose of assisting the description of the embodiments of the present application. The same or similar reference numerals in the drawings represent the same or similar parts.

[0027] Figure 1 A structure schematic diagram of a semiconductor production equipment provided by an embodiment of the present application is shown. As shown in Figure 1 The semiconductor production equipment includes an etching cavity 100, an oxygen remover 200, and a recycling mechanism 300. The oxygen remover 200 is connected with the etching cavity 100. The recycling mechanism 300 is connected with the oxygen remover 200 and includes a redox reaction cavity 310.

[0028] In practical application, the redox reaction cavity 310 is filled with carbon monoxide gas and carbon monoxide catalyst 10. The oxygen remover 200 is used to perform oxygen removal operation on the etchant to reduce the oxygen content in the etchant, and improve the etching rate and etching effect of the etchant on the target object. The recycling mechanism 300 is used to make the oxygen separated from the etchant enter the redox reaction cavity 310, and further perform redox reaction with the carbon monoxide gas under the catalysis of the carbon monoxide catalyst 10 to obtain carbon dioxide gas, which can be dissolved in deionized water to obtain carbon dioxide aqueous solution, and the target object is cleaned, so as to save energy. In the embodiment of the utility model, the etchant is, for example, tetramethylammonium hydroxide solution, and the target object is, for example, wafer, and the material of the wafer is silicon. After the oxygen removal of the oxygen remover 200, the oxygen content of the tetramethylammonium hydroxide solution is less than 5ppm, and the thickness of the silicon oxide remaining on the surface of the etched target object is less than 5A.

[0029] It can be understood that the redox reaction cavity 310 is also connected with an external carbon monoxide gas source 20. The carbon monoxide gas source 20 provides carbon monoxide gas for the redox reaction cavity 310. In addition, the oxygen remover 200 is connected with an external etchant source 30, and the etchant source 30 is used to provide the etchant. The etchant enters the etching cavity 100 after the oxygen removal of the oxygen remover 200.

[0030] Further, the recycling mechanism 300 further comprises a first heating part 320. The first heating part 320 is arranged at the redox reaction cavity 310, and is used to heat the redox reaction cavity 310, and improve the reaction rate of oxygen and carbon monoxide.

[0031] Optionally, the oxygen remover 200 comprises a shell 210 and an oxygen remover 220. The shell 210 is a hollow structure with an inner cavity. The oxygen remover 220 is arranged in the inner cavity of the shell 210. Optionally, the oxygen remover 200 separates oxygen from the etchant by adsorption. In this way, the oxygen remover 200 can be a molecular sieve oxygen remover, and the oxygen remover 220 is a molecular sieve.

[0032] Further, the oxygen remover 200 further comprises a third heating part 230, and the third heating part 230 is arranged on the shell 210 and is used to heat the oxygen remover 220, and improve the oxygen adsorption efficiency. Optionally, the third heating part 230 can heat the etchant flowing through the oxygen remover 220 to 40-100 DEG C.

[0033] In the embodiment of the utility model, the liquid recovery agent is used to flush the oxygen scavenger 220 to separate the oxygen scavenger 220 from the oxygen adsorbed by the oxygen scavenger 220, and make the oxygen dissolve in the liquid recovery agent. In this way, the liquid recovery agent can carry the oxygen into the reuse mechanism 300.

[0034] The liquid recovery agent entering the oxygen scavenger 200 is in a low-temperature state. In one specific example, the liquid recovery agent is deionized water, that is, the deionized water input into the oxygen scavenger 200 is low-temperature deionized water. The low-temperature deionized water means that the temperature of the deionized water input into the oxygen scavenger 200 should be lower than the temperature of the oxygen scavenger 220, because the solubility of oxygen in water is inversely proportional to the temperature, and the lower the temperature, the greater the solubility of oxygen in deionized water. In this way, when the low-temperature deionized water is used to flush the oxygen scavenger 220, the oxygen adsorbed on the oxygen scavenger 220 can be separated from the oxygen scavenger 220 and dissolved in the deionized water. This oxygen recovery method has the advantages of simple operation and convenience. Generally, the temperature of the deionized water input into the oxygen scavenger 200 is not higher than 30℃.

[0035] In this way, the oxygen scavenger 200 is also connected with an external deionized water supply source 40, and the deionized water supply source 40 is used to provide low-temperature deionized water for the oxygen scavenger 200.

[0036] At the same time, the reuse mechanism 300 also includes a gas-liquid separation chamber 330 and a second heating part 340. The gas-liquid separation chamber 330 is connected between the oxygen scavenger 200 and the redox reaction chamber 310. The second heating part 340 is arranged at the gas-liquid separation chamber 330. In this way, the low-temperature deionized water carrying oxygen reaches the gas-liquid separation chamber 330 after leaving the oxygen scavenger 200, and is heated and warmed by the second heating part 340 at the gas-liquid separation chamber 330, resulting in a decrease in the solubility of oxygen and the escape of oxygen. The escaped oxygen enters the redox reaction chamber 310 and reacts with carbon monoxide gas.

[0037] In some examples, the redox reaction chamber 310 can be connected with a gas storage device (not shown in the figure) to store the generated carbon dioxide gas by using the gas storage device. In other examples, the redox reaction chamber 310 is in communication with any suitable pipeline through which deionized water flows, so that the generated carbon dioxide gas directly enters the pipeline and dissolves in the deionized water to form a carbon dioxide aqueous solution.

[0038] In a preferred example, the reuse mechanism 300 further comprises a connecting pipe 350 and a converging pipe 360. One end of the connecting pipe 350 is connected to the gas-liquid separation chamber 330, and the other end is connected to the converging pipe 360. The converging pipe 360 is further connected to the redox reaction chamber 310. In this way, the deionized water after gas-liquid separation flows into the converging pipe 360 through the connecting pipe 350, and the carbon dioxide gas generated in the redox reaction chamber 310 also enters the converging pipe 360 and dissolves in the deionized water to obtain a carbon dioxide aqueous solution.

[0039] More preferably, the reuse mechanism 300 further comprises a cooling part 370, which is arranged at the connecting pipe 350 and / or the converging pipe 360. The cooling part 370 has the advantage of being able to cool the deionized water at the connecting pipe 350 and / or the converging pipe 360, increase the solubility of the carbon dioxide gas, and increase the concentration of the obtained carbon dioxide aqueous solution.

[0040] The reuse mechanism 300 can further comprise a concentration detection element 380. The concentration detection element 380 is arranged on the converging pipe 360 and is used to detect the concentration of the carbon dioxide aqueous solution in the converging pipe 360.

[0041] Correspondingly, the semiconductor production equipment further comprises a valve assembly 400, which comprises a first valve 410 and a second valve 420. The first valve 410 is arranged between the oxygen remover 200 and the etching chamber 100, and the second valve 420 is arranged between the oxygen remover 200 and the reuse mechanism 300, more specifically between the oxygen remover 200 and the gas-liquid separation chamber 330. When the oxygen adsorbed by the oxygen remover 200 is not recycled and utilized, the first valve 410 is opened and the second valve 420 is closed. When the oxygen adsorbed by the oxygen remover 200 is recycled and utilized, the first valve 410 is closed and the second valve 420 is opened.

[0042] It can be understood that the oxygen absorber 200 is provided with a first outlet end and a second outlet end (not labeled in the figure), the oxygen absorber 200 is connected with the etching cavity 100 through a first pipeline (not labeled in the figure) arranged at the first outlet end, and the oxygen absorber 200 is connected with the gas-liquid separation cavity 330 through a second pipeline (not labeled in the figure) arranged at the second outlet end. Preferably, the first valve 410 is arranged at the first outlet end, and the second valve 420 is arranged at the second outlet end. The advantage of such arrangement is that the liquid recovery agent can be prevented from remaining in the first pipeline and mixing into the etchant to reduce the concentration of the etchant, thereby reducing the adverse effect on the etching of the target object and improving the etching quality; and the etchant can be prevented from remaining in the second pipeline and mixing into the liquid recovery agent to cause the etchant component to exist in the subsequent obtained carbon dioxide aqueous solution, thereby reducing the adverse effect on the cleaning of the target object.

[0043] It should be noted that when the oxygen absorbed by the oxygen absorber 200 is not recycled and utilized, the deionized water supply source 40 does not provide the liquid recovery agent to the oxygen absorber 200, and when the oxygen absorbed by the oxygen absorber 200 is recycled and utilized, the etchant source 30 does not provide the etchant to the oxygen absorber 300. To achieve the above purpose, the valve assembly 400 can further include a third valve 430 and a fourth valve 440, the third valve 430 is arranged between the etchant source 30 and the oxygen absorber 200, and the fourth valve 440 is arranged between the deionized water supply source 40 and the oxygen absorber 200. More specifically, the oxygen absorber 200 is provided with a first inlet end and a second inlet end (not labeled in the figure), the oxygen absorber source 200 is connected with the etchant source 30 through a third pipeline (not labeled in the figure) arranged at the first inlet end, and the oxygen absorber 200 is connected with the deionized water supply source 40 through a fourth pipeline (not labeled in the figure) arranged at the second inlet end. The third valve 430 is preferably arranged at the first inlet end, and the fourth valve 440 is preferably arranged at the second inlet end. Thus, when the oxygen absorbed by the oxygen absorber 200 is not recycled and utilized, the third valve 430 is opened and the fourth valve 440 is closed, and when the oxygen absorbed by the oxygen absorber 200 is recycled and utilized, the third valve 430 is closed and the fourth valve 440 is opened. The advantage of such arrangement is that the liquid recovery agent can be prevented from remaining in the third pipeline and mixing into the etchant to reduce the concentration of the etchant, and the etchant can be prevented from remaining in the fourth pipeline and mixing into the liquid recovery agent to cause the etchant component to exist in the subsequent obtained carbon dioxide aqueous solution.

[0044] In addition, it should be noted that the concentration of the carbon dioxide aqueous solution used to clean the target object needs to be within a preset range. Therefore, in the process of recovering and utilizing the oxygen adsorbed by the oxygen remover 200, the operator can also control the opening degree of the fourth valve 440 according to the concentration value detected by the concentration detection element 380 to adjust the concentration of the carbon dioxide aqueous solution. Specifically, when the concentration of the carbon dioxide aqueous solution is too high, the opening degree of the fourth valve 440 is increased to increase the flow of the liquid recovery agent; when the concentration of the carbon dioxide aqueous solution is too low, the opening degree of the fourth valve 440 is reduced to reduce the flow of the liquid recovery agent.

[0045] In addition, the valve assembly 400 can also include a fifth valve 450, which is arranged between the oxidation-reduction reaction cavity 310 and the carbon monoxide gas source 20. By controlling the opening degree of the fifth valve 450, the flow of carbon monoxide provided by the carbon monoxide gas source 20 can be controlled.

[0046] Although the present application has been disclosed as above, it is not limited thereto. Those skilled in the art can make various modifications and variations to the present application without departing from the spirit and scope of the present application. Therefore, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application also intends to include these modifications and variations.

Claims

1. A semiconductor manufacturing apparatus, characterized in that, It includes an etching chamber, a deaerator, and a recycling mechanism; the deaerator is connected to the etching chamber, the recycling mechanism is connected to the deaerator, and includes a redox reaction chamber.

2. The semiconductor manufacturing equipment according to claim 1, characterized in that, The recycling mechanism further includes a first heating unit, which is disposed at the redox reaction chamber.

3. The semiconductor manufacturing equipment according to claim 1, characterized in that, The recycling mechanism further includes a gas-liquid separation chamber and a second heating section. The gas-liquid separation chamber is connected between the deaerator and the redox reaction chamber, and the second heating section is located in the gas-liquid separation chamber. The semiconductor manufacturing equipment also includes a valve assembly, which includes a first valve and a second valve. The first valve is disposed between the deaerator and the etching chamber, and the second valve is disposed between the deaerator and the gas-liquid separation chamber.

4. The semiconductor manufacturing equipment according to claim 3, characterized in that, The recycling mechanism also includes a connecting pipe and a manifold; the redox reaction chamber is connected to the manifold; one end of the connecting pipe is connected to the gas-liquid separation chamber and the other end is connected to the manifold.

5. The semiconductor manufacturing equipment according to claim 4, characterized in that, The reuse mechanism also includes a cooling unit, which is disposed at the connecting pipe and / or the manifold.

6. The semiconductor manufacturing equipment according to claim 4, characterized in that, The reuse mechanism also includes a concentration detection element, which is disposed on the manifold.

7. The semiconductor manufacturing equipment according to claim 3, characterized in that, The deaerator is provided with a first outlet end and a second outlet end; the deaerator is connected to the etching chamber through the first outlet end, and the deaerator is connected to the gas-liquid separation chamber through the second outlet end; The first valve is located at the first outlet end, and the second valve is located at the second outlet end.

8. The semiconductor manufacturing equipment according to claim 3, characterized in that, The deaerator is also provided with a first inlet end and a second inlet end; the deaerator is connected to an external etching agent source through the first inlet end, and the deaerator is connected to an external deionized water supply source through the second inlet end; The valve assembly further includes a third valve and a fourth valve, the third valve being disposed at the first inlet end and the fourth valve being disposed at the second inlet end.

9. The semiconductor manufacturing equipment according to claim 1, characterized in that, The deaerator is a molecular sieve deaerator.

10. The semiconductor manufacturing equipment according to claim 1, characterized in that, The deaerator includes a housing, a deaerator, and a third heating element; the housing is a hollow structure with an inner cavity; the deaerator is filled in the inner cavity; and the third heating element is disposed on the housing.

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