Light emitting diode and light emitting device

Abstract

The utility model provides a light-emitting diode and a light-emitting device.The light-emitting diode sequentially comprises a semiconductor laminated layer, an ohmic contact layer, an ohmic contact electrode, a first bonding pad electrode and the like, the ohmic contact layer comprises a plurality of ohmic contact strips, and the ohmic contact strips are sequentially arranged in the annular direction end to end at intervals in the extending direction of the ohmic contact strips; the ohmic contact electrode comprises an electrode part covering each ohmic contact strip and a conduction part extending from the electrode part to be electrically connected with the first bonding pad electrode, and the two adjacent electrode parts are in axial symmetry in the overlook direction; the first bonding pad electrode is arranged on the ohmic contact electrode and located in the annular enclosed area of the electrode part. According to the technical scheme, the structure and the arrangement mode of each ohmic contact strip of the ohmic contact layer and the structure and the arrangement mode of the electrode strips of the ohmic contact electrodes covering the ohmic contact layer are optimized, so that the current distribution problem of a plane structure is solved, and the light emitting efficiency and the light emitting uniformity of the light emitting diode are effectively improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a light emitting diode and a light emitting device. BACKGROUND

[0002] A light emitting diode (LED) is a kind of semiconductor device, and its basic structure includes a PN junction between a P-type semiconductor and an N-type semiconductor. When a forward voltage is applied to the LED, electrons and holes recombine at the junction of the PN junction and release energy in the form of photons, which form light radiation.

[0003] At present, in a vertical structure LED chip, a finger-shaped electrode strip is formed on a semiconductor stack, and a circuit conduction layer is formed above the electrode strip and between the electrode strip and the pad electrode to realize conduction between the pad electrode and the electrode strip. However, since the light emitting surface of the light emitting diode is located on the same side as the electrode strip and the circuit conduction layer, and the electrode strip and the circuit conduction layer are both metal materials, the electrode strip and the circuit conduction layer of the metal material will absorb the light emitted by the active layer, affecting the light emitting efficiency of the light emitting diode. At the same time, the structure of the electrode strip and the circuit conduction layer will also affect the current density distribution, affecting the product quality.

[0004] Therefore, how to further optimize the current density, light emitting uniformity and light emitting efficiency of the vertical structure LED chip has become a key problem to be solved in the current development of LED chip technology. Practical new type content

[0005] In view of the defects and deficiencies of the existing LED chip in the prior art, the purpose of the present application is to provide a light emitting diode and a light emitting device to effectively improve the light emitting uniformity and light emitting efficiency of the LED chip.

[0006] According to one aspect of the present application, a light emitting diode is provided, comprising:

[0007] A semiconductor stack comprising a first semiconductor layer, a second semiconductor layer and an active layer located between the first semiconductor layer and the second semiconductor layer;

[0008] An ohmic contact layer is provided on the side of the first semiconductor layer away from the active layer, and the ohmic contact layer comprises a plurality of ohmic contact strips, which are arranged in a ring shape with a head-to-tail interval along the extension direction of each ohmic contact strip.

[0009] An ohmic contact electrode comprises an electrode part covering each of the ohmic contact strips, and a conduction part extending from the electrode part to electrically connect with a first pad electrode; and adjacent two electrode parts are both arranged in axial symmetry in the top view direction.

[0010] A first pad electrode is arranged on the ohmic contact electrode; in a top projection direction of the light emitting diode, the first pad electrode is located in the annular enclosed area of the electrode part, and is electrically connected with the first semiconductor layer through the ohmic contact electrode.

[0011] According to one aspect of the present application, a light emitting device is also provided, comprising:

[0012] A packaging substrate;

[0013] At least one light emitting diode having one side of a substrate bonded on the packaging substrate, the light emitting diode being the light emitting diode provided in the above technical solution.

[0014] Compared with the prior art, the light emitting diode and the light emitting device provided by the present application have at least the following beneficial effects:

[0015] The technical solution of the present application optimizes the structure and arrangement of each ohmic contact strip of the ohmic contact layer, and the structure and arrangement of the electrode strip of the ohmic contact electrode covering the ohmic contact layer, the ohmic contact strips are arranged in a ring shape with a head-to-tail interval along the respective extension direction, and the adjacent two ohmic contact strips are axially symmetrical, so as to improve the current distribution problem of the planar structure, and effectively improve the light emitting efficiency and light emitting uniformity of the light emitting diode. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 A top view structural schematic diagram of the light emitting diode chip provided in Embodiment One of the present application;

[0017] Figure 2 A Figure 1 A sectional view structural schematic diagram along the A-A direction;

[0018] Figure 3 A Figure 1 A sectional view structural schematic diagram along the B-B direction;

[0019] Figure 4 A Figure 1 A local enlarged schematic diagram at P1;

[0020] Figure 5 A Figure 1 A local enlarged schematic diagram at P2;

[0021] Figure 6 A structural schematic diagram of the light emitting device provided in Embodiment Two of the present application;

[0022] LIST OF REFERENCE NUMERALS:

[0023] 100, substrate; 200, bonding layer; 310, metal reflection layer; 320, adhesion layer; 330, current blocking layer;

[0024] 400, semiconductor stack; 410, second semiconductor layer; 420, active layer; 430, first semiconductor layer;

[0025] 500, ohmic contact layer; 510, first ohmic contact strip; 520, second ohmic contact strip; 530, third ohmic contact strip; 540, fourth ohmic contact strip;

[0026] 600, ohmic contact electrode; 610, electrode part; 611, first electrode part; 612, second electrode part; 613, third electrode part; 614, fourth electrode part; 620, conduction part; 621, first conduction part; 622, second conduction part; 623, third conduction part; 624, fourth conduction part;

[0027] 710, first pad electrode; 720, second pad electrode; 800, roughened electrode layer; 900, insulating layer; 002, packaging substrate. DETAILED DESCRIPTION

[0028] The present application provides a light emitting diode, comprising:

[0029] A semiconductor stack, comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;

[0030] An ohmic contact layer disposed on a side of the first semiconductor layer away from the active layer, the ohmic contact layer comprising a plurality of ohmic contact strips, the ohmic contact strips being arranged in a ring shape with a first end of each ohmic contact strip being spaced from a second end of an adjacent ohmic contact strip;

[0031] An ohmic contact electrode, comprising an electrode part covering each of the ohmic contact strips, and a conduction part extending from the electrode part to a first pad electrode; the electrode parts are arranged in an axial symmetry in a top view;

[0032] A first pad electrode disposed on the ohmic contact electrode; in a top view of the light emitting diode, the first pad electrode is located within a ring-shaped enclosed area of the electrode parts, and is electrically connected to the first semiconductor layer through the ohmic contact electrode.

[0033] By adopting the above technical solution, the electrode parts arranged in a ring shape form a plurality of current paths, so that the current spreads from the center of the electrode to the edge along a plurality of symmetric paths, reducing the current crowding effect, thereby improving the uniformity of current distribution; the axial symmetry arrangement makes the current spread symmetrically in all directions, avoiding local overheating and improving the stability of the device; the first pad electrode is located within the ring-shaped enclosed area, and the current spreads from the center to the periphery, forming a radial current path, further optimizing the symmetry of current distribution.

[0034] In an optional embodiment, two adjacent ohmic contact strips are arranged symmetrically in the top view.

[0035] In an optional embodiment, the number of electrode sections is 3 to 6. This ensures good ohmic contact while minimizing obstruction of the light-emitting area and improving overall light extraction efficiency.

[0036] In an alternative embodiment, the electrode portion has a length a, and the lengths of any other electrode portion are within the range of (1 ± 5%)a, in order to provide a more uniform current density distribution.

[0037] In an optional embodiment, the electrode portion is a straight line with a certain width to adapt to the structural shape of a light-emitting diode with a rectangular light-emitting surface.

[0038] In an optional embodiment, the electrode portion of the ohmic contact electrode covers the corresponding ohmic contact strip; along the top-view projection direction of the light-emitting diode, the ohmic contact strip is located within the projection range of the electrode portion, see [reference needed]. Figure 4 The edge of the electrode portion and the edge of the ohmic contact strip are spaced apart by a distance b along the length of the electrode portion, and the distance between the edge of any other electrode portion and the edge of the ohmic contact strip is within the range of (1 ± 5%)b. This avoids current density fluctuations caused by local coverage deviations, minimizes electrode shading of the light-emitting area, thereby improving the uniformity of current distribution and increasing the effective light-emitting area.

[0039] In an optional embodiment, the width of the electrode portion is between 3 μm and 10 μm.

[0040] In an optional embodiment, the length of the ohmic contact strip is between 120 μm and 350 μm; and / or the width of each ohmic contact strip is between 2 μm and 8 μm.

[0041] In an optional embodiment, the conductive portion of each ohmic contact electrode is perpendicular to the electrode portion to which it is connected, and the connection point between the conductive portion and the electrode portion is located at the midpoint of the electrode portion. This improves the uniformity of lateral current spread, reduces current density differences in edge regions, and further alleviates the current congestion effect.

[0042] In an optional embodiment, along the top-view projection direction of the light-emitting diode, the first pad electrode has a circular projection, which is located in the center of the annular enclosure area of ​​the electrode portion, and the diameter is between 50μm and 200μm.

[0043] In an optional embodiment, a roughened electrode layer is further included, covering the ohmic contact electrode and the first pad electrode. The roughened structure is configured to improve the light extraction efficiency of the light emitting diode.

[0044] In an optional embodiment, an insulating layer is further included, covering the semiconductor stack and the sidewall, the insulating layer having a first opening portion exposing part of the first pad electrode.

[0045] In an optional embodiment, the light emitting diode further comprises:

[0046] a bonding layer disposed on a side of the second semiconductor layer of the semiconductor stack away from the active layer;

[0047] a substrate bonded to a side of the bonding layer away from the semiconductor stack.

[0048] In an optional embodiment, the light emitting diode further comprises:

[0049] a metal reflective layer disposed between the bonding layer and the semiconductor stack, configured to reflect light emitted by the active layer to an emission surface;

[0050] a current blocking layer disposed between the metal reflective layer and the second semiconductor layer, configured to optimize current distribution.

[0051] In an optional embodiment, each of the two adjacent conducting portions is axially symmetric in a top view.

[0052] In an optional embodiment, the conducting portion has a length c, and the length of any other conducting portion is within the range of (1±5%)c.

[0053] In an optional embodiment, the electrode portion, the conducting portion, and the first pad electrode are axially symmetrically distributed in a top view.

[0054] In an optional embodiment, the light emitting diode has a size of no more than 500μm*500μm.

[0055] The present application also provides a light emitting device, comprising:

[0056] a packaging substrate;

[0057] at least one light emitting diode having one side bonded to the packaging substrate, the light emitting diode being any of the light emitting diodes described above.

[0058] The following detailed description of the application is provided as an example to enable those skilled in the art to carry out the application. Other advantages and benefits of the application will be apparent from this description. The application can be implemented or applied in other different embodiments, and the details in the description can be modified or changed based on different views and applications without departing from the spirit of the application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0059] It should be noted that the diagrams provided in the embodiments of the application only illustrate the basic concept of the application in a schematic manner, and although only the components related to the application are shown in the diagrams, the actual implementation does not draw the components according to the number, shape and size of the components, the actual implementation of each component can be changed arbitrarily in shape, number and proportion, and the layout of the components may also be more complex. The structure, proportion, size, etc. shown in the drawings of the specification are only used to cooperate with the content disclosed in the specification for those skilled in the art to understand and read, and are not used to limit the conditions that can be implemented by the application, so they do not have technical significance. Any modification of the structure, change of the proportion relationship or adjustment of the size, without affecting the effect and purpose that can be achieved by the application, should still fall within the scope of the technical content disclosed by the application.

[0060] Embodiment one:

[0061] Referring to Figures 1 to 5 The embodiment provides a light emitting diode, the size of the light emitting diode is not greater than 500μm*500μm. From bottom to top, it includes a substrate 100, a bonding layer 200, a metal reflection layer 310, an adhesion layer 320, a current blocking layer 330, a semiconductor stack 400, an ohmic contact layer 500 and an ohmic contact electrode 600, etc. The different semiconductor layers will be described in detail below in combination with the drawings.

[0062] The substrate 100 is bonded to the semiconductor stack 400 through the bonding layer 200. Further, the substrate 100 is a conductive substrate, and a second pad electrode 720 is arranged on the side of the substrate 100 away from the bonding layer 200, so that the light emitting diode is formed as a chip with a vertical structure. Optionally, the substrate 100 can be one of GaP, SiC, Si or GaAs with conductive properties. Further, the bonding layer 200 is a conductive bonding layer. The material of the second pad electrode 720 can be one of Al, Ni, Ti, Pt, Cr, Au or an alloy composed of at least two of these materials.

[0063] The metal reflective layer 310 is disposed between the bonding layer 200 and the semiconductor stack, and is used to reflect the light emitted by the active layer 420 to the light emitting surface, which is conducive to improving the light emitting efficiency. The metal reflective layer 310 is made of at least one material including Au, Ag, Al or Pt.

[0064] The current blocking layer 330 is disposed between the metal reflective layer 310 and the second semiconductor layer 410, and is used to optimize the current distribution. Further, the adhesion layer 320 is disposed between the current blocking layer 330 and the metal reflective layer 310 to improve the interlayer adhesion, and the adhesion layer 320 is a transparent oxide layer.

[0065] The semiconductor stack 400 includes the first semiconductor layer 430, the second semiconductor layer 410, and the active layer 420 between the first semiconductor layer 430 and the second semiconductor layer 410. The first semiconductor layer 430 is an electron-providing layer, which can be formed by injecting n-type dopants. The second semiconductor layer 410 is a hole-providing layer, which can be formed by injecting p-type dopants. The holes and the electrons combine in the active layer 420 to output light of a predetermined wavelength. The active layer 420 can be formed by a single-layer or multi-layer quantum well structure of a plurality of semiconductor thin films of alternating potential well layers and potential barrier layers. The active layer 420 is composed of different materials or ratios according to different wavelengths of the output light.

[0066] Referring to Figures 1 to 3 The ohmic contact layer 500 is disposed on the first semiconductor layer 430, and includes a plurality of ohmic contact strips. The ohmic contact strips are sequentially and circularly arranged with a head-to-tail interval along the extension direction of each ohmic contact strip. Further, the number of the ohmic contact strips is 3-6, which ensures good ohmic contact and reduces the shading of the light emitting area, thereby improving the overall light emitting efficiency. Specifically, the ohmic contact strips include the first ohmic contact strip 510, the second ohmic contact strip 520, the third ohmic contact strip 530, and the fourth ohmic contact strip 540. The four ohmic contact strips are sequentially and circularly arranged with a head-to-tail interval to form a "mouth" type distribution. Adjacent two ohmic contact strips are axially symmetrical in the top view but not directly in contact with each other.

[0067] Referring to Figures 1 to 3, the ohmic contact electrode 600 includes an electrode portion 610 covering each ohmic contact strip, and a conduction portion 620 extending from the electrode portion 610 to be electrically connected to the first pad electrode 710. The ohmic contact electrode 600 can be a transparent electrode or not. To avoid the absorption of light emitted by the active layer 420 by the ohmic contact electrode 600, the ohmic contact electrode 600 is set as a transparent electrode. At this time, both the electrode portion 610 and the conduction portion 620 of the ohmic contact electrode 600 are transparent electrodes to reduce light absorption and improve the brightness of the light-emitting diode. Optionally, the material of the transparent electrode can be indium tin oxide (ITO) or indium zinc oxide (IZO). In this embodiment, the material of the ohmic contact electrode 600 is IZO. Further, the ohmic contact electrode 600 includes a first electrode portion 611, a second electrode portion 612, a third electrode portion 613, and a fourth electrode portion 614 respectively covering the four ohmic contact strips. The four electrode portions 610 are respectively connected through the first conduction portion 621, the second conduction portion 622, the third conduction portion 623, and the fourth conduction portion 624. The four conduction portions and the four electrode portions form a "field" - shaped distributed electrode structure. Adjacent two electrode portions 610 are axisymmetric in the top - view direction but do not directly contact at the ends. The circumferentially spaced - arranged ohmic contact strips form four current paths, enabling the current to flow along four symmetric paths when diffusing from the electrode center to the edge, reducing the current crowding effect, thereby improving the uniformity of current distribution; the current symmetrically diffuses in four directions, avoiding local overheating and improving the device stability. Further, referring to Figure 4 , there is a minimum distance D between adjacent two electrode portions 610, and this distance D is between 5μm and 20μm. For example, it can be 8μm, 10μm, 12μm or 15μm.

[0068] Referring to Figures 1 to 3 , the widths of different ohmic contact strips differ within the range of ±5%, to provide a relatively uniform current density distribution. Further, referring to Figure 4 and Figure 5 , the width of the ohmic contact strip is between 2μm and 8μm. For example, it can be 3.0μm, 3.5μm, 4.0μm, 5.5μm or 7.0μm. In an optional implementation, the lengths of each ohmic contact strip are equal, and the length of each ohmic contact strip is between 120μm and 350μm. For example, it can be 150μm, 180μm, 220μm, 250μm or 300μm. Referring to Figure 1 , the electrode portion 610 has a length a, and the length of any other electrode portion 610 is within the range of (1 ± 5%)a. Further, the widths of each ohmic contact strip are equal, and the widths of each electrode portion are also equal, to provide a more uniform current density distribution.

[0069] Referring to Figures 1 to 3The shape of the ohmic contact strip is linear with a certain width, which is suitable for the structure of the LED with a rectangular light emitting surface. Further, the shape of the electrode part is also linear with a certain width. It can be understood that for the LED with a circular light emitting surface or other light emitting surface with non-linear edges, the shape of the ohmic contact strip can be adjusted according to the product shape, for example, the shape of the ohmic contact strip can be arc-shaped or zigzag-shaped.

[0070] Referring to Figures 1 to 3 The electrode part 610 of the ohmic contact electrode 600 covers the corresponding ohmic contact strip. In the projection direction of the LED, the ohmic contact strip is located in the projection range of the electrode part 610. The edge of the electrode part 610 and the edge of the ohmic contact strip have a spacing b in the length direction of the electrode part 610. The spacing between the edge of any other electrode part 610 and the edge of the ohmic contact strip is within the range of (1±5%)b. Further, the spacing between the edge of the electrode part 610 and the edge of the ohmic contact strip is equal in the length direction of the ohmic contact strip, that is, each ohmic contact strip is located in the central region of the corresponding electrode part 610. This arrangement can avoid current density fluctuations caused by local coverage deviation, minimize the shielding of the light emitting region by the electrode, and thus improve the uniformity of the current distribution and the effective light emitting area. In an optional embodiment, referring to Figure 4 and Figure 5 The width of the electrode part is between 3 μm and 10 μm, for example, 5 μm, 6 μm, 7 μm or 8 μm. Further, the spacing between the edge of the electrode part 610 and the edge of the ohmic contact strip is between 1 μm and 5 μm, for example, 1.25 μm, 1.75 μm, 2.5 μm or 4.0 μm.

[0071] Referring to Figures 1 to 3 The conducting part 620 of each ohmic contact electrode is perpendicular to the electrode part 610 connected thereto. The connection point of the conducting part 620 and the electrode part 610 is located at the midpoint of the electrode part 610, that is, the conducting part 620 and the electrode part 610 form a "T" arrangement. This arrangement can improve the uniformity of the lateral current expansion, reduce the current density difference in the edge region, and further alleviate the current crowding effect. In an optional embodiment, referring to Figure 5 The two adjacent conducting parts 620 are arranged in axial symmetry in the projection direction. The conducting part 620 has a length c, and the length of any conducting part 620 is within the range of (1±5%)c. Further, the length and width of the first conducting part 621, the second conducting part 622, the third conducting part 623 and the fourth conducting part 624 are equal. The length is between 30 μm and 100 μm, for example, 40 μm, 45 μm, 50 μm or 60 μm. In an optional embodiment, referring to Figure 4 and Figure 5The width of the conducting portion 620 is equal to the width of the electrode portion 610.

[0072] Referring to Figures 1 to 3 The first pad electrode 710 is located on the ohmic contact electrode 600, and in the plan view of the light emitting diode, the first pad electrode 710 is located in the annular enclosed region of the electrode portion 610 and is electrically connected to the first semiconductor layer through the ohmic contact electrode. The material of the first pad electrode 710 can be one of Al, Ni, Ti, Pt, Cr, Au or an alloy of at least two of these materials. Further, the first pad electrode 710 is located at the center of the annular enclosed region of the electrode portion 610, so that the current uniformly spreads from the center to the periphery of the ohmic contact strip, forming a radial current path and optimizing the symmetry of the current distribution. Further, the first pad electrode 710 has a circular projection located at the center of the annular enclosed region of the electrode portion, and the diameter is between 50 μm and 200 μm, for example, it can be 70 μm, 90 μm, 100 μm, 120 μm or 160 μm.

[0073] Referring to Figure 1 The overall pattern formed by the electrode portion 610, the conducting portion 620 and the first pad electrode 710 is axially symmetrically distributed in the plan view.

[0074] Referring to Figures 1 to 3 The roughened electrode layer 800 covers the ohmic contact electrode 600 and the first pad electrode 710, and the roughened structure is provided to improve the light extraction efficiency of the light emitting diode. In the plan view of the light emitting diode, the projections of the ohmic contact electrode 600 and the first pad electrode 710 are located within the projection range of the roughened electrode layer 800.

[0075] Referring to Figures 1 to 3 The insulating layer 900 covers the semiconductor stack 400 and the sidewall insulating layer, and the insulating layer 900 has a first opening portion that exposes part of the first pad electrode 710. Further, the diameter of the first opening portion is greater than the diameter of the first pad electrode 710, for example, the diameter of the first pad electrode 710 is 100 μm and the diameter of the first opening portion is 110 μm.

[0076] It can be understood that the light emitting diode provided by the embodiment can be configured with other layers in addition to the above-mentioned layers, and additionally, a part of the layers can be omitted as needed.

[0077] Embodiment Two:

[0078] Referring to Figure 6The present embodiment provides a light emitting device, which can be a lighting device, a backlight device, a display device, such as a lamp, a television, a mobile phone, a panel, or an RGB display screen. The light emitting device comprises a packaging substrate 002 and at least one light emitting diode arranged on the surface of the packaging substrate 002, the packaging substrate 002 being electrically connected with the second pad electrode 720 of the light emitting diode, and the light emitting device also has the above-mentioned excellent effects.

[0079] In summary, the light emitting diode and the light emitting device provided by the present application have high industrial utilization value because they effectively overcome the various shortcomings in the prior art.

[0080] The above embodiments only exemplarily illustrate the principles and effects of the present application, and are not used to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes completed by those skilled in the art without departing from the spirit and technical thought disclosed by the present application should be covered by the claims of the present application.

Claims

1. A light-emitting diode, characterized in that, include: A semiconductor stack includes a first semiconductor layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; An ohmic contact layer is disposed on the side of the first semiconductor layer away from the active layer. The ohmic contact layer includes a plurality of ohmic contact strips, which are arranged circumferentially with their ends spaced apart along the extension direction of each ohmic contact strip. The ohmic contact electrode includes an electrode portion covering each of the ohmic contact strips, and a conductive portion extending from the electrode portion to be electrically connected to the first pad electrode; two adjacent electrode portions are arranged axially symmetrically in a top view. The first pad electrode is disposed on the ohmic contact electrode; along the top view projection direction of the light-emitting diode, the first pad electrode is located within the annular enclosure area of ​​the electrode portion, and is electrically connected to the first semiconductor layer through the ohmic contact electrode.

2. The light-emitting diode according to claim 1, characterized in that, The two adjacent ohmic contact strips are arranged symmetrically in the top view.

3. The light-emitting diode according to claim 1, characterized in that, The number of electrode sections is 3 to 6.

4. The light-emitting diode according to claim 1, characterized in that, The electrode portion has a length a, and the length of any other electrode portion is within the range of (1 ± 5%)a.

5. The light-emitting diode according to claim 1, characterized in that, The electrode portion is a straight line with a certain width.

6. The light-emitting diode according to claim 1, characterized in that, The electrode portion of the ohmic contact electrode covers the corresponding ohmic contact strip; along the top view projection direction of the light-emitting diode, the ohmic contact strip is located within the projection range of the electrode portion, the edge of the electrode portion and the edge of the ohmic contact strip have a distance b in the length direction of the electrode portion, and the distance between the edge of any other electrode portion and the edge of the ohmic contact strip is within the range of (1±5%)b.

7. The light-emitting diode according to claim 5, characterized in that, The width of the electrode portion is between 3μm and 10μm.

8. The light-emitting diode according to claim 6, characterized in that, The length of the ohmic contact strip is between 120 μm and 350 μm; and / or the width of each of the ohmic contact strips is between 2 μm and 8 μm.

9. The light-emitting diode according to claim 1, characterized in that, The conductive portion of each ohmic contact electrode is perpendicular to the electrode portion to which it is connected, and the connection point between the conductive portion and the electrode portion is located at the midpoint of the electrode portion.

10. The light-emitting diode according to claim 1, characterized in that, Along the top-view projection direction of the light-emitting diode, the first pad electrode has a circular projection, which is located in the center of the annular enclosure area of ​​the electrode portion, and the diameter is between 50μm and 200μm.

11. The light-emitting diode according to claim 1, characterized in that, It also includes a roughened electrode layer that covers the ohmic contact electrode and the first pad electrode.

12. The light-emitting diode according to claim 1, characterized in that, It also includes an insulating layer covering the top and sidewalls of the semiconductor stack, the insulating layer having a first opening that exposes a portion of the first pad electrode.

13. The light-emitting diode according to claim 1, characterized in that, Also includes: A bonding layer is disposed on the side of the second semiconductor layer of the semiconductor stack away from the active layer; The substrate is bonded to the side of the bonding layer away from the semiconductor stack.

14. The light-emitting diode according to claim 13, characterized in that, Also includes: A metal reflective layer is disposed between the bonding layer and the semiconductor stack; A current blocking layer is disposed between the metal reflective layer and the second semiconductor layer.

15. The light-emitting diode according to claim 1, characterized in that, The two adjacent conductive parts are arranged symmetrically in the top view direction.

16. The light-emitting diode according to claim 15, characterized in that, The conductive part has a length c, and the length of any other conductive part is within the range of (1 ± 5%)c.

17. The light-emitting diode according to claim 1, characterized in that, The overall pattern formed by the electrode portion, the conductive portion, and the first pad electrode is axially symmetrical in the top view.

18. The light-emitting diode according to claim 1 or 15, characterized in that, The size of the light-emitting diode is no greater than 500μm*500μm.

19. A light-emitting device, characterized in that, The light-emitting device includes: Packaging substrate; At least one light-emitting diode, wherein the light-emitting diode has one side of a substrate bonded to the package substrate, and the light-emitting diode is the light-emitting diode according to any one of claims 1 to 18.

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