Silicon carbide induction crystal growing furnace
By improving the design of components and sealing structures, the airtightness problem when the upper and lower furnace bodies of the growth furnace are closed was solved, achieving efficient sealing of the silicon carbide growth furnace and ensuring the stability and integrity of silicon carbide growth.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-24
- Publication Date
- 2026-03-31
AI Technical Summary
In the growth furnace equipment, insufficient air tightness when the upper and lower furnace bodies are closed leads to air leakage, which affects the normal reaction of silicon carbide.
A silicon carbide induction crystal growth furnace was designed. By pushing the component and driving the motor to move the ball base, the lower furnace body moves towards the upper furnace body, so that the upper and lower furnace bodies form a mold-closed state. The sealing performance is improved by the structure of embedded ring and sealing gasket.
It effectively prevents air leakage when the upper and lower furnace bodies are closed, improves the airtightness of the growth furnace, and ensures the normal progress of the silicon carbide growth process.
Smart Images
Figure CN224062952U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of growth furnaces, specifically relating to a silicon carbide induction crystal growth furnace. Background Technology
[0002] Most semiconductor integrated circuit crystals are grown using the physical vapor transport (PVT) method. The basic principle of crystal growth is to place the raw material at the bottom of a graphite crucible and heat the crucible using the skin effect through an induction coil. Once a certain temperature is reached, the raw material decomposes into gas and volatilizes to the seed crystal area at the top of the crucible. After a series of chemical reactions, SiC is generated and crystallizes on the surface of the seed crystal through a certain axial and radial temperature gradient to obtain single-crystal silicon carbide with a certain structure.
[0003] Adding silicon carbide raw materials to the growth furnace equipment and applying appropriate temperature and pressure allows the silicon carbide to grow. However, if the airtightness of the upper and lower furnace bodies is insufficient when they are closed, it will lead to air leakage, which will affect the normal reaction of silicon carbide. This needs to be improved.
[0004] This invention attempts to mitigate or at least alleviate such problems or defects by providing new or otherwise improved growth furnaces. Utility Model Content
[0005] In view of one or more of the above-mentioned defects or improvement needs of the prior art, the present invention provides a silicon carbide induction crystal growth furnace, which has the advantages of being able to quickly close the upper furnace body and the lower furnace body and enhancing the airtightness of the upper furnace body and the lower furnace body during the mold closing.
[0006] To achieve the above objectives, this utility model provides a silicon carbide induction crystal growth furnace, which includes a mounting frame having a mounting plane.
[0007] A pushing component, which is detachably mounted on the mounting surface of the mounting bracket;
[0008] The furnace lowering component is detachably mounted on the pushing component. The furnace lowering component includes a furnace lower body mounted on the pushing component. A lower sleeve ring is detachably mounted on the furnace lower body, and an inner groove is provided in the lower sleeve ring.
[0009] The upper furnace component is detachably mounted on the mounting frame. The upper furnace component includes an upper furnace body disposed on the mounting frame, a gas guide pipe on the upper furnace body, an upper collar removably disposed at the bottom of the upper furnace body, and an inner ring detachably disposed on the upper collar.
[0010] When the output end of the pushing component is output, it can push the lower furnace body to move towards the upper furnace body, so that the lower furnace body and the upper furnace body form a mold closing state.
[0011] As a further improvement of this utility model, the pushing component includes
[0012] The base plate is detachably mounted on the mounting surface of the mounting bracket;
[0013] A drive motor is detachably mounted on the mounting bracket, and a drive wheel is mounted on the drive motor;
[0014] A lead screw is rotatably mounted inside the base plate, and a driven wheel is mounted on the lead screw, which meshes with the driving wheel;
[0015] A ball bearing base is movably mounted on the lead screw, and a connecting plate is mounted on one end of the ball bearing base;
[0016] A push rod is detachably mounted on the connecting plate and can pass through the base plate.
[0017] As a further improvement of this utility model, a buffer rod can be detachably installed on the base plate, and the buffer rod can pass through the connecting plate.
[0018] As a further improvement of this utility model, multiple sets of sliding rods are detachably arranged on the lower furnace body, and all sets of sliding rods extend upward in the longitudinal direction, with a rod cavity in each set of sliding rods.
[0019] As a further improvement of this utility model, an upper sliding rod can be detachably installed on the upper furnace body, and the upper sliding rod can be inserted into the rod cavity of the lower sliding rod.
[0020] As a further improvement of this utility model, the diameter of the inner ring is adapted to the diameter of the inner groove of the lower ring, so that the inner groove can be filled when the inner ring is inserted into the inner groove.
[0021] As a further improvement of this utility model, a sealing gasket can be detachably installed in the embedded groove, and the diameter of the sealing gasket is adapted to the diameter of the embedded groove.
[0022] As a further improvement of this utility model, a cone plug can be removably arranged at the top of the air guide tube, and the diameter of the cone plug is adapted to the diameter of the air guide tube.
[0023] In summary, the beneficial effects of the above-described technical solutions conceived by this utility model compared with the prior art include:
[0024] This utility model discloses a silicon carbide induction crystal growth furnace. Through the arrangement of the pushing components, the operator first places the silicon carbide induction crystal raw material to be grown into the lower furnace body. Then, the drive motor is turned on, which drives the driving wheel and the driven wheel to rotate. When the driven wheel rotates, it drives the ball bearing base to move upward. After the ball bearing base moves upward, it drives the push rod to move upward, so as to push the lower furnace body to rise towards the upper furnace body. When the upper and lower sleeve rings are in contact, the lower furnace body and the upper furnace body can be sealed. When the inner ring is inserted into the inner groove, the seal between the lower furnace body and the upper furnace body can be further improved, so as to prevent air leakage when the lower furnace body and the upper furnace body are closed. This greatly enhances the sealing performance of this growth furnace. Attached Figure Description
[0025] Figure 1 This is a schematic diagram of the overall structure of the silicon carbide induction crystal growth furnace of this utility model;
[0026] Figure 2 This is a schematic diagram of the silicon carbide induction crystal growth furnace from another angle.
[0027] Figure 3 This is a schematic diagram of the overall structure of the lower furnace component of this utility model;
[0028] Figure 4 This is a schematic diagram of the overall structure of the pushing component of this utility model;
[0029] Figure 5 This is a schematic diagram of the overall structure of the upper furnace component of this utility model;
[0030] Figure 6 This is a schematic diagram of the overall structure of the furnace component from another angle.
[0031] In all the accompanying drawings, the same reference numerals denote the same technical features, specifically: 1. Mounting bracket; 2. Pushing component; 21. Base plate; 22. Drive motor; 23. Driving wheel; 24. Lead screw; 25. Driven wheel; 26. Ball bearing base; 27. Connecting plate; 28. Push rod; 29. Buffer rod; 3. Lower furnace component; 31. Lower furnace body; 32. Sliding rod; 33. Lower collar; 34. Sealing gasket; 4. Upper furnace component; 41. Upper furnace body; 42. Gas guide pipe; 43. Upper sliding rod; 44. Upper collar; 45. Embedded ring. Detailed Implementation
[0032] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0033] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the invention. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.
[0034] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.
[0035] In the embodiments, by Figure 1-6 A silicon carbide induction crystal growth furnace is provided, wherein, Figure 1 This is a schematic diagram of the overall structure of the silicon carbide induction crystal growth furnace of this utility model; Figure 2 This is a schematic diagram of the silicon carbide induction crystal growth furnace from another angle. Figure 3 This is a schematic diagram of the overall structure of the lower furnace component of this utility model; Figure 4 This is a schematic diagram of the overall structure of the pushing component of this utility model; Figure 5 This is a schematic diagram of the overall structure of the upper furnace component of this utility model; Figure 6 This is a schematic diagram of the overall structure of the upper furnace component from another angle. It includes a mounting frame 1 with a mounting plane; a pushing component 2, detachably mounted on the mounting plane of the mounting frame 1; a lower furnace component 3, detachably mounted on the pushing component 2, the lower furnace component 3 including a lower furnace body 31 disposed on the pushing component 2, a lower sleeve 33 detachably mounted on the lower furnace body 31, and an inner groove within the lower sleeve 33; and an upper furnace component 4. It is detachably mounted on the mounting frame 1. The upper furnace component 4 includes an upper furnace body 41 mounted on the mounting frame 1. The upper furnace body 41 has a gas guide pipe 42. An upper collar 44 is removably arranged at the bottom of the upper furnace body 41. An inner ring 45 is detachably arranged on the upper collar 44. When the output end of the pushing component 2 is output, it can push the lower furnace body 31 to move towards the upper furnace body 41, so that the lower furnace body 31 and the upper furnace body 41 form a mold closing state.
[0036] The overall concept of this utility model is as follows: through the arrangement of the pushing component 2, the operator first places the silicon carbide induction crystal raw material to be grown into the lower furnace body 31, and then turns on the drive motor 22, which drives the driving wheel 23 and the driven wheel 25 to rotate. When the driven wheel 25 rotates, it drives the ball bearing base 26 to move upward. When the ball bearing base 26 moves upward, it drives the pushing rod 28 to move upward, so as to push the lower furnace body 31 towards the upper furnace body 41. When the upper collar 44 and the lower collar 33 are in contact, the seal between the lower furnace body 31 and the upper furnace body 41 can be completed. When the inner ring 45 is inserted into the inner groove, the seal between the lower furnace body 31 and the upper furnace body 41 can be further improved, so as to prevent air leakage when the lower furnace body 31 and the upper furnace body 41 are closed, which can greatly enhance the sealing performance of this growth furnace.
[0037] Next, a more specific structure and construction of the pushing component 2 will be given for further explanation. The pushing component 2 includes a base plate 21, which is detachably mounted on the mounting plane of the mounting frame 1; a drive motor 22, which is detachably mounted on the mounting frame 1, and a drive wheel 23 is mounted on the drive motor 22; a lead screw 24, which is rotatably mounted in the base plate 21, and a driven wheel 25 is mounted on the lead screw 24, and the driven wheel 25 meshes with the drive wheel 23; a ball bearing base 26, which is movably mounted on the lead screw 24, and a connecting plate 27 is mounted on one end of the ball bearing base 26; and a pushing rod 28, which is detachably mounted on the connecting plate 27, and the pushing rod 28 can pass through the base plate 21.
[0038] Next, the working principle of the push component 2 will be further explained. The operator first places the silicon carbide induction crystal raw material to be grown into the lower furnace body 31, and then turns on the drive motor 22, which can drive the drive wheel 23 and the driven wheel 25 to rotate. When the driven wheel 25 rotates, it can drive the ball base 26 to move upward. When the ball base 26 moves upward, it can drive the push rod 28 to move upward, so as to push the lower furnace body 31 towards the upper furnace body 41. When the upper collar 44 and the lower collar 33 are in contact, the seal between the lower furnace body 31 and the upper furnace body 41 can be completed. When the inner ring 45 is inserted into the inner groove, the seal between the lower furnace body 31 and the upper furnace body 41 can be further improved to prevent air leakage when the lower furnace body 31 and the upper furnace body 41 are closed, which can greatly enhance the sealing performance of this growth furnace.
[0039] Subsequently, by heating the lower furnace body 31 and the upper furnace body 41 and injecting gas into the gas pipe 42, the growth of silicon carbide induction crystals in the lower furnace body 31 and the upper furnace body 41 can be rapidly promoted.
[0040] In some embodiments, in order to further stabilize the connecting plate 27 during upward movement, a buffer rod 29 is detachably installed on the base plate 21, and the buffer rod 29 can pass through the connecting plate 27.
[0041] In some embodiments, more specifically, in order to further improve the stability of the lower furnace body 31 when it moves upward and downward, multiple sets of sliding rods 32 are detachably arranged on the lower furnace body 31, and the multiple sets of sliding rods 32 extend upward in the longitudinal direction, and each set of sliding rods 32 has a rod cavity.
[0042] In some embodiments, more specifically, in order to further improve the stability of the connection between the upper furnace body 41 and the lower furnace body 31, an upper sliding rod 43 is detachably installed on the upper furnace body 41, and the upper sliding rod 43 can be inserted into the rod cavity of the lower sliding rod 32.
[0043] In some embodiments, more specifically, during the process of the upper furnace body 31 rising, the lower slide rod 32 can rise synchronously, and the rod cavity of the lower slide rod 32 can be inserted by the upper slide rod 43, which can further improve the stability of the upper furnace body 41 when docking with the lower furnace body 31.
[0044] In some embodiments, more specifically, in order to further improve the tightness of the interlocking of the inner ring 45 with the lower collar 33, the diameter of the inner ring 45 is adapted to the diameter of the inner groove of the lower collar 33, so that the inner groove can be filled when the inner ring 45 is inserted into the inner groove.
[0045] In some embodiments, more specifically, in order to further improve the sealing performance of the inner ring 45 when it abuts against the lower ring 33, a sealing gasket 34 is detachably installed in the inner groove, and the diameter of the sealing gasket 34 is adapted to the diameter of the inner groove.
[0046] In some embodiments, more specifically, in order to prevent impurities from entering the air duct 42 when it is not ventilating, a cone plug is removably provided at the top of the air duct 42, and the diameter of the cone plug is adapted to the diameter of the air duct 42.
[0047] In some embodiments, more specifically, when the air duct 42 is not ventilated, the air duct 42 can be sealed by inserting a cone plug into it.
[0048] In summary, through the installed pushing component 2, the operator first places the silicon carbide induction crystal raw material to be grown into the lower furnace body 31, and then turns on the drive motor 22, which drives the driving wheel 23 and the driven wheel 25 to rotate. When the driven wheel 25 rotates, it drives the ball bearing base 26 to move upward. When the ball bearing base 26 moves upward, it drives the push rod 28 to move upward, so as to push the lower furnace body 31 towards the upper furnace body 41. When the upper collar 44 and the lower collar 33 are in contact, the seal between the lower furnace body 31 and the upper furnace body 41 can be completed. When the inner ring 45 is inserted into the inner groove, the seal between the lower furnace body 31 and the upper furnace body 41 can be further improved to prevent air leakage when the lower furnace body 31 and the upper furnace body 41 are closed, which can greatly enhance the sealing performance of this growth furnace.
[0049] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. A silicon carbide inductive crystal growth furnace, characterized by, It includes A mounting frame (1) has a mounting plane on it; A push member (2) is detachably mounted on the mounting plane of the mounting frame (1); A lower furnace member (3) is detachably arranged on the push member (2), and the lower furnace member (3) includes a lower furnace body (31) arranged on the push member (2), a lower sleeve ring (33) detachably mounted on the lower furnace body (31), and an inner embedding groove in the lower sleeve ring (33); An upper furnace member (4) is detachably mounted on the mounting frame (1), and the upper furnace member (4) includes an upper furnace body (41) arranged on the mounting frame (1), a gas guide pipe (42) on the upper furnace body (41), an upper sleeve ring (44) removably arranged on the bottom of the upper furnace body (41), and an inner embedding ring (45) detachably arranged on the upper sleeve ring (44); When the output end of the push member (2) outputs, the lower furnace body (31) can be pushed to move towards the upper furnace body (41) to form a mold closing state.
2. The silicon carbide inductive crystal growth furnace of claim 1, wherein, The push member (2) includes A bottom plate (21) is detachably mounted on the mounting plane of the mounting frame (1); A drive motor (22) is detachably arranged on the mounting frame (1), and a driving wheel (23) is arranged on the drive motor (22); A lead screw (24) is rotatably arranged in the bottom plate (21), a driven wheel (25) is arranged on the lead screw (24), and the driven wheel (25) is engaged with the driving wheel (23); A ball bearing base (26) is movably arranged on the lead screw (24), and a connecting plate (27) is arranged on one end of the ball bearing base (26); A push rod (28) is detachably mounted on the connecting plate (27), and the push rod (28) can pass through the bottom plate (21).
3. The silicon carbide inductive crystal growth furnace of claim 2, wherein, A buffer rod (29) is also detachably mounted on the bottom plate (21), and the buffer rod (29) can pass through the connecting plate (27).
4. The silicon carbide inductive crystal growth furnace of claim 3, wherein, A plurality of lower slide rods (32) are also detachably arranged on the lower furnace body (31), and the plurality of lower slide rods (32) all extend upwards in the longitudinal direction, and each lower slide rod (32) has a rod cavity.
5. The silicon carbide inductive crystal growth furnace of claim 4, wherein, An upper slide rod (43) is also detachably mounted on the upper furnace body (41), and the upper slide rod (43) can pass into the rod cavity of the lower slide rod (32).
6. The silicon carbide inductive crystal growth furnace of claim 5, wherein, The caliber of the inner embedding ring (45) and the caliber of the inner embedding groove of the lower sleeve ring (33) are adapted to each other, and when the inner embedding ring (45) passes into the inner embedding groove, the inner embedding groove can be filled.
7. The silicon carbide inductive crystal growth furnace of claim 6, wherein, A sealing gasket (34) is also detachably mounted in the inner embedding groove, and the caliber of the sealing gasket (34) and the caliber of the inner embedding groove are adapted to each other.
8. The silicon carbide inductive crystal growth furnace of claim 7, wherein, A tapered plug is also removably arranged on the top of the gas guide pipe (42), and the caliber of the tapered plug and the caliber of the gas guide pipe (42) are adapted to each other.