High-speed high-power radio frequency electronic switch and detection assembly

Abstract

The utility model relates to a high-speed large-power radio frequency electronic switch and a detection assembly, and belongs to the technical field of radio frequency switch assemblies and electronic measurement and control. The radio frequency electronic switch and detection assembly comprises an MCU control module; the control end of the driving circuit is connected with the MCU control module; the input ends of the four groups of biasing circuits are connected with the output end of the driving circuit; the output ends of the four groups of bias circuits are respectively connected with the first end, the second end, the third end and the fourth end of the switch module; one end of the first radio frequency connection module is connected with the first end of the switch module; one end of the second radio frequency connection module is connected with the second end of the switch module; one end of the third radio frequency connection module is connected with the third end of the switch module; and one end of the power detection module is connected with the third radio frequency connection module, and the other end of the power detection module is connected with the MCU control module. According to the utility model, the application requirements of high-speed high-power radio frequency switches and radio frequency power detection can be effectively met.

Description

Technical Field

[0001] This utility model relates to the fields of radio frequency switch components and electronic measurement and control technology, specifically to a high-speed, high-power radio frequency electronic switch and detector component. Background Technology

[0002] With the development of integrated technologies for microwave communication, radar, and electronic countermeasures systems, the requirement for multi-channel and multi-mode operation has become mainstream. However, the multi-channel and multi-mode operation of integrated systems inevitably requires high-speed radio frequency (RF) electronic switches for switching. Currently, high-speed RF electronic switches are mainly based on low to medium power; when high power is applied, the RF electronic switches are prone to burnout. High-power RF switches are mainly based on mechanical coaxial switches, but their switching speed is relatively slow and cannot meet the requirements of integrated high-speed systems. Utility Model Content

[0003] The purpose of this invention is to provide a high-speed, high-power radio frequency electronic switch and detection component. This invention can effectively solve the application requirements of high-speed, high-power radio frequency switches and radio frequency power detection, improve the switching speed, effectively increase the transmission power of radio frequency continuous waves and radio frequency pulses, and improve the accuracy of detection voltage.

[0004] To achieve the above objectives, this utility model provides a high-speed, high-power radio frequency electronic switch and a detector assembly, the radio frequency electronic switch and detector assembly comprising:

[0005] MCU control module;

[0006] A driving circuit, wherein the control terminal of the driving circuit is connected to the MCU control module;

[0007] Four sets of bias circuits, with their input terminals connected to the output terminals of the drive circuit, are used to bias the DC voltage output by the drive circuit.

[0008] The output terminals of the four sets of bias circuits are respectively connected to the first terminal, the second terminal, the third terminal, and the fourth terminal of the switching module.

[0009] The first radio frequency connection module is connected at one end to the first end of the switch module;

[0010] The second radio frequency connection module is connected at one end to the second end of the switch module;

[0011] The third radio frequency connection module has one end connected to the third end of the switch module, and the four sets of bias circuits are used to cooperate with the switch module to connect the first radio frequency connection module and the third radio frequency connection module or the second radio frequency connection module and the third radio frequency connection module.

[0012] The power detection module is connected at one end to the third RF connection module and at the other end to the MCU control module, and is used to detect RF power.

[0013] Optionally, the MCU control module includes:

[0014] MCU controller;

[0015] The switching logic control circuit has one end connected to the output terminal of the MCU controller.

[0016] Optionally, the driving circuit includes:

[0017] A PIN diode driving circuit, one end of which is connected to the output terminal of the switch logic control circuit;

[0018] The DC-DC boost converter is connected at one end to the other end of the PIN diode drive circuit.

[0019] Optionally, the four sets of bias circuits include:

[0020] The input terminal of bias circuit A is connected to the output terminal of the PIN diode driving circuit;

[0021] The input terminal of the bias circuit B is connected to the output terminal of the PIN diode driving circuit;

[0022] The input terminal of the bias circuit C is connected to the output terminal of the PIN diode driving circuit.

[0023] The input terminal of the bias circuit D is connected to the output terminal of the PIN diode driving circuit.

[0024] Optionally, the switching module includes:

[0025] A PIN diode SDPT switch is provided, wherein the first terminal of the PIN diode SDPT switch is connected to the output terminal of the bias circuit A, the second terminal of the PIN diode SDPT switch is connected to the output terminal of the bias circuit B, the third terminal of the PIN diode SDPT switch is connected to the output terminal of the bias circuit C, and the fourth terminal of the PIN diode SDPT switch is connected to the output terminal of the bias circuit D.

[0026] Optionally, the first radio frequency connection module includes:

[0027] The first capacitor has one end connected to the first end of the PIN diode SDPT switch;

[0028] Radio frequency connector A is connected at one end to the other end of the first capacitor.

[0029] Optionally, the second radio frequency connection module includes:

[0030] The second capacitor has one end connected to the second end of the PIN diode SDPT switch;

[0031] Radio frequency connector B is connected at one end to the other end of the second capacitor.

[0032] Optionally, the third radio frequency connection module includes:

[0033] The third capacitor has one end connected to the third terminal of the PIN diode SDPT switch;

[0034] A directional coupler, one end of which is connected to the other end of the third capacitor;

[0035] Radio frequency connector C, one end of which is connected to the other end of the directional coupler.

[0036] Optionally, the power detection module includes:

[0037] One end of the PI attenuator A is connected to the f end of the directional coupler;

[0038] One end of the PI attenuator B is connected to the r end of the directional coupler;

[0039] Forward power detector, one end is connected to the output of the PI attenuator A, and the other end is connected to the MCU controller;

[0040] The reverse power detector is connected at one end to the output of the PI attenuator B and at the other end to the MCU controller.

[0041] The purpose of this invention, based on the above technical solution, is to provide a high-speed, high-power radio frequency (RF) electronic switch and detection component. An MCU control module, a drive circuit, and four sets of bias circuits enable or disable the RF physical channel of the switching module. First, second, and third capacitors regulate the power and frequency passing through the switching module. The power detection module converts the power to analog voltage. This invention effectively addresses the application requirements of high-speed, high-power RF switches and RF power detection, improves switching speed, effectively increases the power transmitted by RF continuous waves and RF pulses, and enhances the accuracy of the detection voltage. Attached Figure Description

[0042] The accompanying drawings are provided to further illustrate the embodiments of the present invention and form part of the specification. They are used together with the following detailed description to explain the embodiments of the present invention, but do not constitute a limitation thereof. In the drawings:

[0043] Figure 1 This is a schematic diagram of a high-speed, high-power radio frequency electronic switch and detector assembly according to an embodiment of the present invention.

[0044] Explanation of reference numerals in the attached figures

[0045] U1, MCU controller; U2, switch logic control circuit

[0046] U3, DC-DC boost converter; U4, PIN diode driver circuit

[0047] U5, PIN diode SDPT switch; U6, forward power detector

[0048] U7, Reverse Power Detector; U8, Directional Coupler

[0049] C1, first capacitor; C2, second capacitor

[0050] C3, the third capacitor Detailed Implementation

[0051] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the scope of the present invention.

[0052] In this embodiment of the utility model, unless otherwise stated, directional terms such as "upper," "lower," "top," and "bottom" are generally used to describe the relative positional relationships of the components in relation to the directions shown in the accompanying drawings or in relation to the vertical, perpendicular, or gravitational directions.

[0053] Furthermore, if the embodiments of this utility model involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the technical solutions of various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this utility model.

[0054] like Figure 1The diagram shows a high-speed, high-power radio frequency electronic switch and detector assembly according to an embodiment of the present invention. The radio frequency electronic switch and detector assembly includes an MCU controller U1, a drive circuit, four sets of bias circuits, a switch module, a first radio frequency connection module, a second radio frequency connection module, a third radio frequency connection module, and a power detection module. Specifically, the control terminal of the drive circuit is connected to the MCU control module; the input terminals of the four sets of bias circuits are connected to the output terminals of the drive circuit to bias the DC voltage output by the drive circuit; the output terminals of the four sets of bias circuits are respectively connected to the first, second, third, and fourth terminals of the switch module; one end of the first radio frequency connection module is connected to the first terminal of the switch module; one end of the second radio frequency connection module is connected to the second terminal of the switch module; and one end of the third radio frequency connection module is connected to the third terminal of the switch module. The four sets of bias circuits cooperate with the switch module to connect the first and third radio frequency connection modules or the second and third radio frequency connection modules. One end of the power detection module is connected to the third radio frequency connection module, and the other end is connected to the MCU control module for detecting radio frequency power. This invention can effectively solve the application requirements of high-speed, high-power radio frequency switches and radio frequency power detection, improve the switching speed, effectively increase the transmission power of radio frequency continuous waves and radio frequency pulses, and improve the accuracy of detection voltage.

[0055] In this embodiment, such as Figure 1 As shown, the MCU control module includes an MCU controller U1 and a switching logic control circuit U2. One end of the switching logic control circuit U2 is connected to the output of the MCU controller U1. The MCU controller U1 outputs high and low levels to control the switching logic circuit. The drive circuit includes a PIN diode driver circuit U4 and a DC-DC boost converter U3. One end of the PIN diode driver circuit U4 is connected to the output of the switching logic control circuit U2, and one end of the DC-DC boost converter U3 is connected to the other end of the PIN diode driver circuit U4. The DC-DC boost converter U3 is used to perform the conversion function from low current voltage to high current voltage, and the high DC voltage output is adjustable, providing high DC power supply for the PIN diode driver circuit U4. The MCU controller U1, the switching logic control circuit U2, the PIN diode driver circuit U4, and the DC-DC boost converter U3 constitute the logic control and power supply circuit for the switching module. The DC-DC boost converter U3 and the PIN diode driver circuit U4 constitute the high DC power supply circuit.

[0056] In this embodiment, the four bias circuits include bias circuit A, bias circuit B, bias circuit C, and bias circuit D. Specifically, the input terminal of bias circuit A is connected to the output terminal of PIN diode driving circuit U4, the input terminal of bias circuit B is connected to the output terminal of PIN diode driving circuit U4, the input terminal of bias circuit C is connected to the output terminal of PIN diode driving circuit U4, and the input terminal of bias circuit D is connected to the output terminal of PIN diode driving circuit U4.

[0057] In this embodiment, the switching module includes a PIN diode SDPT switch U5. The first terminal of the PIN diode SDPT switch U5 is connected to the output terminal of bias circuit A, the second terminal of the PIN diode SDPT switch U5 is connected to the output terminal of bias circuit B, the third terminal of the PIN diode SDPT switch U5 is connected to the output terminal of bias circuit C, and the fourth terminal of the PIN diode SDPT switch U5 is connected to the output terminal of bias circuit D. The output terminal of the PIN diode driving circuit U4 is connected to bias circuits A, B, C, and D respectively, forming the DC bias voltage and RF choke function circuit required for the RF physical channel of the single-pole double-edge switch of the PIN diode SDPT switch U5. The operating frequency of the component is adapted by adjusting the relevant parameters of bias circuits A, B, C, and D.

[0058] In this embodiment, the first RF connection module includes a first capacitor C1 and an RF connector A. One end of the first capacitor C1 is connected to the first end of the PIN diode SDPT switch U5, and one end of the RF connector A is connected to the other end of the first capacitor C1. The second RF connection module includes a second capacitor C2 and an RF connector B. One end of the second capacitor C2 is connected to the second end of the PIN diode SDPT switch U5, and one end of the RF connector B is connected to the other end of the second capacitor C2. The third RF connection module includes a third capacitor C3, a directional coupler U8, and an RF connector C. One end of the third capacitor C3 is connected to the third end of the PIN diode SDPT switch U5, one end of the directional coupler U8 is connected to the other end of the third capacitor C3, and one end of the RF connector C is connected to the other end of the directional coupler U8. The directional coupler U8 can be a stripline type, a waveguide type, or a coaxial type. RF connector A, first capacitor C1, RF connector C, PIN diode SDPT switch U5, third capacitor C3, and directional coupler U8 are connected in sequence. The switches at terminals 1 and 3 of PIN diode SDPT switch U5 are turned on, forming the RF transmission channel from RF connector A to RF connector C. RF connector B, second capacitor C2, RF connector C, PIN diode SDPT switch U5, third capacitor C3, and directional coupler U8 are connected in sequence. The switches at terminals 2 and 3 of PIN diode SDPT switch U5 are turned on, forming the RF transmission channel from RF connector B to RF connector C. The MCU controller U1 controls the switching logic circuit to achieve a DC high-voltage bias output for the PIN diode drive circuit U4, which supplies high voltage to the DC-DC boost converter U3. Different voltages are provided to bias circuits A, B, C, and D respectively, thereby turning the RF physical channel of the PIN diode SDPT switch on or off.

[0059] In this embodiment, the power detection module includes a PI attenuator A, a PI attenuator B, a forward power detector U6, and a reverse power detector U7. One end of PI attenuator A is connected to the f-terminal of the directional coupler U8, one end of PI attenuator B is connected to the r-terminal of the directional coupler U8, one end of the forward power detector U6 is connected to the output terminal of PI attenuator A, and the other end is connected to the MCU controller U1. One end of the reverse power detector U7 is connected to the output terminal of PI attenuator B, and the other end is connected to the MCU controller U1. The forward power detector U6 is used to detect the output power of the RF connector C, and the reverse power detector is used to detect the reflected power of the RF connector C. The f-terminal of the directional coupler U8, PI attenuator A, forward power detector U6, and MCU controller U1 are connected in sequence to form the forward power detector U6 circuit. The r-terminal of the directional coupler U8, PI attenuator B, reverse power detector U7, and MCU controller U1 are connected in sequence to form the reverse power detector U7 circuit. The MCU controller U1 receives the detection voltage Vf from the forward power detector U6 and the detection voltage Vr from the reverse power detector U7. The power detection function couples the forward and reverse RF signal power in the RF channel through the directional coupler U8. The forward and reverse signal power are attenuated by PI attenuators A and B, respectively, and then converted to analog voltage by the forward power detector U6 and the reverse power detector U7, respectively. The analog voltage is then output to the MCU controller U1 for processing.

[0060] The purpose of this invention, based on the above technical solution, is to provide a high-speed, high-power radio frequency (RF) electronic switch and detection component. An MCU control module, a drive circuit, and four sets of bias circuits enable or disable the RF physical channel of the switch module. Capacitors C1, C2, and C3 regulate the power and frequency passing through the switch module. The power detection module converts the power to analog voltage. This invention effectively addresses the application requirements of high-speed, high-power RF switches and RF power detection, improves switching speed, effectively increases the power transmitted by RF continuous waves and RF pulses, and enhances the accuracy of the detection voltage.

[0061] The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings; however, the present invention is not limited thereto. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention. This includes combining various specific technical features in any suitable manner. To avoid unnecessary repetition, the present invention will not describe the various possible combinations separately. However, these simple modifications and combinations should also be considered as the content disclosed in the present invention and are all within the protection scope of the present invention.

Claims

1. A high-speed, high-power radio frequency electronic switch and detector assembly, characterized in that, The radio frequency electronic switch and detection assembly comprises: An MCU control module; A driving circuit, a control end of which is connected with the MCU control module; Four groups of biasing circuits, input ends of which are connected with output ends of the driving circuit, for biasing output of direct current voltage output by the driving circuit; A switch module, output ends of the four groups of biasing circuits are respectively connected with a first end, a second end, a third end and a fourth end of the switch module; A first radio frequency connection module, one end of which is connected with the first end of the switch module; A second radio frequency connection module, one end of which is connected with the second end of the switch module; A third radio frequency connection module, one end of which is connected with the third end of the switch module, and the four groups of biasing circuits are used for cooperating with the switch module to turn on the first radio frequency connection module and the third radio frequency connection module or the second radio frequency connection module and the third radio frequency connection module; A power detection module, one end of which is connected with the third radio frequency connection module, and the other end of which is connected with the MCU control module, for detecting radio frequency power.

2. The radio frequency electronic switch and detector assembly of claim 1, wherein, The MCU control module comprises: An MCU controller; A switch logic control circuit, one end of which is connected with an output end of the MCU controller.

3. The radio frequency electronic switch and detector assembly of claim 2, wherein, The driving circuit comprises: A PIN diode driving circuit, one end of which is connected with an output end of the switch logic control circuit; A DC-DC voltage converter, one end of which is connected with the other end of the PIN diode driving circuit.

4. The radio frequency electronic switch and detector assembly of claim 3, wherein, The four groups of biasing circuits comprise: A biasing circuit A, an input end of which is connected with an output end of the PIN diode driving circuit; A biasing circuit B, an input end of which is connected with an output end of the PIN diode driving circuit; A biasing circuit C, an input end of which is connected with an output end of the PIN diode driving circuit; A biasing circuit D, an input end of which is connected with an output end of the PIN diode driving circuit.

5. The radio frequency electronic switch and detector assembly of claim 4, wherein, The switch module comprises: A PIN diode SDPT switch, a first end of the PIN diode SDPT switch is connected with an output end of the biasing circuit A, a second end of the PIN diode SDPT switch is connected with an output end of the biasing circuit B, a third end of the PIN diode SDPT switch is connected with an output end of the biasing circuit C, and a fourth end of the PIN diode SDPT switch is connected with an output end of the biasing circuit D.

6. The radio frequency electronic switch and detector assembly of claim 5, wherein, The first radio frequency connection module comprises: A first capacitor, one end of which is connected with the first end of the PIN diode SDPT switch; A radio frequency connector A, one end of which is connected with the other end of the first capacitor.

7. The radio frequency electronic switch and detector assembly of claim 5, wherein, The second radio frequency connection module comprises: A second capacitor, one end of which is connected with the second end of the PIN diode SDPT switch; A radio frequency connector B, one end of which is connected with the other end of the second capacitor.

8. The radio frequency electronic switch and detector assembly of claim 5, wherein, The third radio frequency connection module comprises: A third capacitor, one end of which is connected with the third end of the PIN diode SDPT switch; A directional coupler, one end of which is connected with the other end of the third capacitor; A radio frequency connector C, one end of which is connected with the other end of the directional coupler.

9. The radio frequency electronic switch and detector assembly of claim 8, wherein, The power detection module comprises: A PI attenuator A, one end of which is connected with an f end of the directional coupler; A PI attenuator B, one end of which is connected with the r end of the directional coupler; Forward power detection, one end of which is connected with the output end of the PI attenuator A, and the other end of which is connected with the MCU controller; Reverse power detection, one end of which is connected with the output end of the PI attenuator B, and the other end of which is connected with the MCU controller.

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