High-performance storage device structure using AlScN ferroelectric material
By combining AlScN ferroelectric material with SiC wafer substrate, HfO2 insulating layer and AlN polarization buffer layer, the problems of lead contamination and fabrication complexity of traditional ferroelectric memory materials are solved, realizing high-performance, low-power memory devices that are suitable for high-temperature environments and compatible with CMOS processes.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-09
- Publication Date
- 2026-03-31
Smart Images
Figure CN224069037U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to information storage technology field, concretely relates to a kind of high-performance storage device structure using AlScN ferroelectric material. BACKGROUND
[0002] With the rapid development of information technology, the demand for high-performance, high-capacity, high-reliability storage devices is increasing. Traditional storage technologies, such as flash memory and hard disk, although meet market demand to some extent, but there are still many limitations in speed, power consumption and life, etc.
[0003] Ferroelectric memory as a kind of non-volatile, high-speed and low-power storage technology, has received widespread attention in recent years. Ferroelectric memory uses the polarization characteristics of ferroelectric materials to store electric charge, with fast read and write speed, low power consumption, long data retention time, etc. However, traditional ferroelectric materials, such as Pb(Zr,Ti)O3(PZT), have lead pollution and complex preparation process, which limits their application in practical application. SUMMARY
[0004] The purpose of the present utility model is to provide a kind of high-performance storage device structure using AlScN ferroelectric material for solving the above problems.
[0005] To achieve the above purpose, the utility model adopts the following technical solutions:
[0006] A kind of high-performance storage device structure using AlScN ferroelectric material, including substrate layer, insulating layer, ferroelectric layer, polarization buffer layer and gate layer arranged from bottom to top, the ferroelectric layer adopts AlScN thin film, its thickness is 20nm, the polarization buffer layer adopts AlN, its thickness is 10nm.
[0007] Preferably, the substrate layer adopts SiC wafer substrate matched with AlScN thin film.
[0008] Preferably, the insulating layer adopts HfO2, its thickness is 10nm.
[0009] Preferably, the gate layer adopts TiN metal gate, its thickness is 200nm.
[0010] Preferably, the AlScN thin film is grown by atomic layer deposition or magnetron sputtering.
[0011] After adopting the above technical solutions, the utility model has the following advantages compared with the background art:
[0012] The utility model provides a kind of high-performance storage device structure using AlScN ferroelectric material, AlScN has wurtzite crystal structure, ferroelectricity is stable, can keep specific electric state after removing external electric field, and keep stable in up to 1100 ℃ environment, it is ideal material to realize nonvolatile storage, AlScN thin film has excellent polarization performance, can store more electric charge in smaller volume, to improve storage density, AlScN is the lowest dielectric constant in inorganic ferroelectric material, helpful to increase the sensing margin of FeRAM;AlScN thin film can be grown using magnetron sputtering technology at temperature lower than 400 ℃, compatible with CMOS manufacturing process, and it does not contain volatile element, reduce the pollution risk in COMS process.In addition, through AlN polarization buffer layer, the polarization fatigue generated by ferroelectric layer material and electrode contact part is effectively reduced.The memory device made of AlScN and over AlN has low write power consumption, fast reading speed, high temperature resistance and wide application range. BRIEF DESCRIPTION OF DRAWINGS
[0013] Figure 1 It is structure schematic diagram of the utility model. DETAILED DESCRIPTION
[0014] In order to make the purpose, technical scheme and advantage of the utility model more clearly, the following is further detailed to the utility model by combining with drawing and example.It should be understood that the specific example described here is only used to explain the utility model, and is not used to limit the utility model.
[0015] It needs to be explained in the utility model that terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like are based on the orientation or positional relationship shown in the drawing, and are only for the convenience of describing the utility model and simplifying the description, and are not indicative or suggestive of the device or element of the utility model must have a specific orientation, so it cannot be understood as a limitation on the utility model.
[0016] EMBODIMENT
[0017] Please refer to Figure 1 As shown in the figure, the utility model discloses a kind of high-performance storage device structure using AlScN ferroelectric material, including substrate layer 1, insulating layer 2, ferroelectric layer 3, polarization buffer layer 4 and gate layer 5 sequentially from bottom to top, ferroelectric layer 3 uses AlScN thin film, its thickness is 20nm, polarization buffer layer uses AlN, its thickness is 10nm.Polarization buffer layer 4 is grown a layer of low remanent polarization, low flip loss ferroelectric material as buffer on AlScN thin film, for reducing the polarization fatigue of AlScN material in electrode contact position.10nm's thickness is a good balance point, can provide sufficient buffering effect, and can avoid the adverse effect on the overall performance of device.
[0018] The substrate layer 1 adopts a SiC wafer substrate matched with the AlScN thin film.
[0019] The gate layer 5 adopts a TiN metal gate for connecting an external voltage, and the thickness is 200 nm.
[0020] The AlScN thin film is grown by atomic layer deposition or magnetron sputtering, and the ferroelectric performance of the AlScN thin film is optimized by adjusting the proportion of Al and Sc.
[0021] The above merely describes a preferred specific implementation of the present application, but the protection scope of the present application is not limited to this, any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the present application, which should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.
Claims
1. A high performance storage device structure using AlScN ferroelectric material, characterized by: The ferroelectric layer is made of AlScN film, and the thickness is 20nm.
2. A high performance memory device structure using AlScN ferroelectric material as claimed in claim 1, wherein: The substrate layer is made of SiC wafer substrate matched with the AlScN film.
3. A high performance memory device structure using AlScN ferroelectric material as claimed in claim 1, wherein: The insulating layer is made of HfO2, and the thickness is 10nm.
4. A high performance memory device structure using AlScN ferroelectric material as claimed in claim 1, wherein: The gate layer is made of TiN metal gate, and the thickness is 200nm.
5. The high-performance memory device structure using AlScN ferroelectric material as described in claim 1, characterized in that: The AlScN film is grown by atomic layer deposition or magnetron sputtering.