Bonding wire bridge chip

Abstract

The utility model discloses a bonding wire bridge chip, which relates to the technical field of light-emitting diodes (LEDs) and comprises an insulating substrate, a conducting layer is arranged on the top of the insulating substrate, a conducting channel is arranged on the conducting layer, and a bonding wire port used for connecting an LED chip and an integrated circuit (IC) wafer is arranged at the end of the conducting channel. And the conductive channel has a single-channel mode and a multi-channel mode. According to the utility model, the bonding wire bridge chip is arranged, and the conductive channel of the bonding wire bridge chip can provide a stable electrical connection path for the LED chip and the IC wafer, so that compared with the traditional operation mode of repeated debugging and multiple wire bonding between the LED chip and the IC wafer, the bonding wire bridge chip can reduce the wire bonding times and the wire bonding number; the wire welding difficulty is reduced, the wire welding time is shortened, and the wire welding yield is improved.

Description

Technical Field

[0001] This utility model relates to the field of LED technology, and in particular to a wire bonding bridge chip. Background Technology

[0002] In the field of LED packaging technology, wire bonding is a critical step in connecting LED chips and driver ICs, directly affecting product reliability and production efficiency. For some specially designed LED chips with ICs, such as multi-channel LED modules with complex built-in circuits, workers need to perform multiple or repetitive wire bonding operations, which can easily lead to difficulties in wire bonding or unstable wire bonding quality. Moreover, the pad spacing of such LED modules is usually small, and traditional wire bonding technology is prone to short circuits or poor soldering due to insufficient precision. This requires repeated adjustments to the wire bonding equipment parameters to barely complete the wire bonding, which takes up to several hours and the yield is difficult to guarantee. Therefore, a wire bonding bridge chip is needed to solve the above problems. Utility Model Content

[0003] To address the shortcomings of existing technologies, this utility model provides a wire bonding bridge chip, which solves the technical problems mentioned in the background section.

[0004] To solve the above-mentioned technical problems, the present invention provides the following technical solution: a wire bonding bridge chip, comprising an insulating substrate, a conductive layer disposed on the top of the insulating substrate, a conductive channel disposed on the conductive layer, a wire bonding port for connecting an LED chip and an IC wafer disposed at the end of the conductive channel, and the conductive channel having a single-channel mode and a multi-channel mode.

[0005] Furthermore, the surface of the conductive channel is covered with an antioxidant layer, and the conductive layer is made of silver paste. The conductive channel is formed on the conductive layer by photolithography.

[0006] Furthermore, the single-channel mode of the conductive channel includes a conductive path one, which is connected to multiple conductive paths two; the multi-channel mode of the conductive channel includes two or more conductive paths three, and each of the multiple conductive paths three is connected to multiple conductive paths four.

[0007] Furthermore, reinforcing pads are provided at the intersections of conductive path one and conductive path two, and conductive path three and conductive path four.

[0008] Furthermore, insulating grooves are provided between the conductive paths of the multi-channel mode, and the depth of the insulating grooves penetrates the conductive layer.

[0009] Furthermore, insulating grooves are provided between the conductive paths of the multi-channel mode, and the depth of the insulating grooves penetrates the conductive layer.

[0010] Furthermore, the insulating substrate is made of sapphire.

[0011] By employing the above technical solution, this utility model provides a wire bonding bridge chip, which has at least the following beneficial effects:

[0012] 1. This utility model provides a stable electrical connection path between LED chips and IC chips by setting up a wire bonding bridge chip. Compared with the traditional method of repeatedly debugging and bonding wires between LED chips and IC chips, the addition of the wire bonding bridge chip can reduce the number of bonding times and the number of bonding wires, reduce the difficulty of bonding wires, shorten the bonding time, and improve the bonding yield.

[0013] 2. This utility model divides the conductive channels into single-channel mode and multi-channel mode. The single-channel mode is suitable for simple wire bonding needs and reduces space occupation, while the multi-channel mode supports multi-point connection, solves the complex wire bonding needs of high-density, multi-pin LED plus IC, and makes it easy to select the appropriate conductive channel for use according to the welding scenario. Attached Figure Description

[0014] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0015] Figure 1 This is a schematic diagram of the single-channel conductive channel structure of this utility model;

[0016] Figure 2 This is a schematic diagram of the multi-channel conductive channel structure of this utility model;

[0017] Figure 3 for Figure 2 Enlarged image;

[0018] Figure 4 This is a cross-sectional view of the conductive channel and the antioxidant layer of this utility model.

[0019] In the diagram: 1. Insulating substrate; 2. Conductive layer; 3. Conductive channel; 301. Conductive path one; 302. Conductive path two; 303. Conductive path three; 304. Conductive path four; 305. Antioxidant layer; 306. Reinforcing pad; 307. Insulating groove; 4. Wire bonding port; 5. Positioning mark. Detailed Implementation

[0020] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0021] For certain specially designed LEDs with IC chips, such as multi-channel LED modules with built-in complex circuits, workers need to perform multiple or repeated wire bonding operations, which can easily lead to difficulties in wire bonding or unstable wire bonding quality. In addition, the pad spacing of such LED modules is usually small, and traditional wire bonding technology is prone to short circuits or poor soldering due to insufficient precision. This requires repeated adjustments to the wire bonding equipment parameters to barely complete the wire bonding, which takes up to several hours and the yield rate is difficult to guarantee. Example

[0022] To reduce the difficulty of wire bonding when adding LEDs and ICs, please refer to [link / reference needed]. Figures 1-4 This invention provides a wire bonding bridge chip that can connect LED chips and IC chips, reducing the difficulty of wire bonding special LEDs with IC beads at a low cost. The wire bonding bridge chip uses an insulating substrate 1 as a base, with a conductive layer 2 on top of the substrate 1. The insulating substrate 1 is made of sapphire, which has excellent insulation properties, preventing leakage or short circuits between the conductive layer 2 and the external environment or the insulating substrate 1. Conductive channels 3 are provided on the conductive layer 2, and wire bonding ports 4 for connecting the LED chip and the IC chip are provided at the ends of the conductive channels 3. The conductive channels 3 and wire bonding ports 4 of this wire bonding bridge chip can provide a stable electrical connection path between the LED chip and the IC chip. Compared to the traditional method of repeated debugging and multiple wire bonding operations between the LED chip and the IC chip, the addition of the wire bonding bridge chip can reduce the number of wire bonding operations and the amount of wire bonding, reduce the difficulty of wire bonding, shorten the wire bonding time, and improve the wire bonding yield.

[0023] To enable this wire bonding bridge chip to be applied to wire bonding scenarios of varying complexity, conductive channel 3 is equipped with single-channel and multi-channel modes. The single-channel mode of conductive channel 3 includes conductive path 1 301, which is connected to multiple conductive paths 2 302. The multi-channel mode of conductive channel 3 includes two or more conductive paths 303, which are all connected to multiple conductive paths 4 304. The single-channel mode is suitable for simple wire bonding needs, with a compact structure and reduced space occupation. The multi-channel mode supports multi-point connection and solves the complex wire bonding needs of high-density, multi-pin LEDs and ICs.

[0024] As the main connector between the LED chip and the IC chip, the conductive channel 3 needs to ensure its conductivity. Therefore, an anti-oxidation layer 305 is covered on the surface of the conductive channel 3. The anti-oxidation layer 305 is made of titanium nitride, which can resist high-temperature oxidation and corrosion in humid environments, extend the chip life, and reduce the risk of resistance increasing over time while maintaining conductivity. The conductive layer 2 is made of silver paste, and the conductive channel 3 is set on the conductive layer 2 through photolithography. The low resistivity of the silver paste ensures efficient current transmission.

[0025] To facilitate the assembly of the wire bonding bridge chip, a positioning mark 5 is provided on the bottom of the insulating substrate 1. The positioning mark 5 is a laser-engraved cross line. During production, the conductive layer 2 can be aligned with high precision according to the positioning mark 5, thereby improving the production efficiency of the chip. Example

[0026] Since there may be a risk of breakage between conductive path 1 301 and conductive path 2 302, and conductive path 303 and conductive path 4 304, in order to ensure the electrical performance of the wire bonding bridge chip, reinforcing pads 306 are provided at the intersection nodes of conductive path 1 301 and conductive path 2 302, and conductive path 303 and conductive path 4 304, to enhance the tensile strength of the conductive path connection points, reduce the risk of conductive path detachment, and improve electrical stability.

[0027] To avoid signal crosstalk between the multi-channel modes of conductive channel 3, an insulating groove 307 is provided between the conductive paths of the multi-channel modes. The depth of the insulating groove 307 penetrates the conductive layer 2, and the width of the insulating groove 307 is set to 5-20μm. This can completely isolate adjacent conductive paths, avoid short circuits, and ensure independent transmission of multi-channel signals and signal integrity.

[0028] The control method of this utility model is automatic control through a controller. The control circuit of the controller can be implemented by simple programming by those skilled in the art. The power supply is also common knowledge in the field. Since this utility model is mainly used to protect mechanical devices, the control method and circuit connection will not be explained in detail.

[0029] It should be noted that, in this document, the terms “comprising,” “including,” or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0030] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A wirebonded bridge chip, characterized by: The application relates to an insulating substrate (1) provided with a conductive layer (2) on the top of the insulating substrate (1), the conductive layer (2) is provided with a conductive channel (3), the end of the conductive channel (3) is provided with a wire port (4) for connecting LED chips and IC wafers, and the conductive channel (3) is provided with a single-channel mode and a multi-channel mode.

2. The wire bond bridge chip of claim 1, wherein: The single-channel mode of the conductive channel (3) comprises a conductive path one (301), a plurality of conductive path twos (302) are connected to the conductive path one (301), the multi-channel mode of the conductive channel (3) comprises two or more conductive path threes (303), and a plurality of conductive path fours (304) are connected to the plurality of conductive path threes (303).

3. The wire bond bridge chip of claim 1, wherein: The surface of the conductive channel (3) is covered with an anti-oxidation layer (305), the material of the conductive layer (2) is silver paste, and the conductive channel (3) is arranged on the conductive layer (2) through a photoetching process.

4. The wire bond bridge chip of claim 2, wherein: An enhanced pad (306) is arranged at the intersection of the conductive path one (301) and the conductive path two (302) and the intersection of the conductive path three (303) and the conductive path four (304).

5. The wire bond bridge chip of claim 2, wherein: Insulating grooves (307) are arranged between the conductive paths of the multi-channel mode, and the depth of the insulating grooves (307) penetrates the conductive layer (2).

6. The wire bond bridge chip of claim 1, wherein: The bottom of the insulating substrate (1) is provided with a positioning mark (5), and the positioning mark (5) is a laser-engraved cross line.

7. The wire bond bridge chip of claim 1, wherein: The material of the insulating substrate (1) is sapphire.

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