Chemical mechanical planarization equipment

Abstract

The utility model provides chemical mechanical planarization equipment, and relates to the technical field of semiconductor equipment. The chemical mechanical planarization apparatus includes: at least one planarization module; the planarization module comprises a cleaning unit and a grinding unit; the first row of stations in the cleaning unit comprise a conduction station, a buffer station and a temporary storage station; the second row of stations comprise a cleaning station, a brush brushing station and a drying station; the conduction station is used for receiving a wafer to be processed; the buffer station is used for placing to-be-processed wafers waiting to be transmitted to the temporary storage station and wafers cleaned by the cleaning station; the temporary storage station is used for placing to-be-processed wafers to be ground and ground wafers; the grinding unit is used for grinding the fed to-be-processed wafer; the cleaning station is used for cleaning the ground wafer; the pen brush brushing station is used for brushing the cleaned wafer conveyed from the buffer station; and the drying station is used for drying the brushed wafer. According to the utility model, the wafer processing efficiency can be improved.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor equipment technology, and in particular relates to a chemical mechanical planarization device. Background Technology

[0002] In semiconductor manufacturing processes, Chemical Mechanical Polishing (CMP) is a key surface planarization technology widely used to remove excess material layers from wafer surfaces. As wafer linewidths rapidly decrease, the quality requirements for wafer surfaces are becoming increasingly stringent. To remove various contaminant particles, including organic and inorganic substances, the cleaning process typically involves multiple steps such as spraying, ultrasonication, chemical treatment, and drying. Each cleaning step is performed at a different workstation, necessitating the transfer of wafers between these stations. Therefore, ensuring wafer production efficiency is of paramount importance.

[0003] When processing wafers, related chemical mechanical planarization equipment typically uses a cleaning unit to clean and dry each wafer after grinding. After the previous wafer is cleaned and dried, the next wafer is processed. However, this method can cause wafer congestion and reduce wafer processing efficiency. Utility Model Content

[0004] This invention provides a chemical mechanical planarization apparatus to improve wafer processing efficiency.

[0005] A first aspect of this utility model provides a chemical mechanical planarization apparatus, including at least one planarization module; the planarization module includes a cleaning unit and a grinding unit;

[0006] The cleaning unit has two rows of workstations; one row of workstations includes a conduction workstation, a buffer workstation, and a temporary storage workstation arranged in sequence; the other row of workstations includes a cleaning workstation, a brush washing workstation, and a drying workstation arranged in sequence; wherein, the conduction workstation and the drying workstation are located on the side away from the grinding unit, and the temporary storage workstation and the cleaning workstation are located on the side closer to the grinding unit.

[0007] The conduction station is used to receive wafers to be processed; the buffer station is used to place wafers to be processed waiting to be transferred to the temporary storage station and wafers cleaned by the cleaning station; the temporary storage station is used to place wafers to be processed waiting to be ground and wafers that have been ground.

[0008] The grinding unit is used to grind the fed wafer to be processed;

[0009] The cleaning station is used to clean the polished wafers; the brush cleaning station is used to brush the cleaned wafers transferred from the buffer station; and the drying station is used to dry the brushed wafers.

[0010] In one embodiment, the buffer station includes a first buffer layer and a second buffer layer located at different heights; wherein the height of the first buffer layer is higher than that of the second buffer layer.

[0011] The first buffer layer is used to place the wafer to be processed;

[0012] The second buffer layer is used to place the cleaned wafer.

[0013] In one embodiment, a moisturizing device is provided in the buffer station, which is used to moisturize the wafers in the buffer station.

[0014] In one embodiment, the planarization module further includes a first transfer robot and a second transfer robot; wherein the first transfer robot and the second transfer robot are disposed between two rows of workstations in the cleaning unit;

[0015] The first transfer robot is also disposed between the conduction station and the buffer station, for transferring the wafer to be processed on the conduction station to the first buffer layer, transferring the cleaned wafer on the second buffer layer to the brush cleaning station, and transferring the cleaned wafer in the brush cleaning station to the drying station.

[0016] The second transfer robot is also disposed between the buffer station and the temporary storage station, for transferring the wafer to be processed in the first buffer layer to the temporary storage station, transferring the wafer that has been ground in the temporary storage station to the cleaning station, and transferring the cleaned wafer in the cleaning station to the second buffer layer.

[0017] In one embodiment, the grinding unit includes a first grinding zone and a first grinding robot; the first grinding zone includes a plurality of first loading stations arranged in sequence and a plurality of first grinding stations arranged in sequence.

[0018] The first grinding robot is positioned on one side parallel to the axis of the first loading station, and the first grinding robot is used to transfer wafers between the temporary storage station and the first loading station.

[0019] The first grinding station is located on the other side parallel to the axis of the first loading station arrangement, and each first grinding station is adjacent to at least one first loading station.

[0020] In one embodiment, the grinding unit further includes a second grinding zone and a second grinding robot; the second grinding zone includes a plurality of second loading stations arranged in sequence and a plurality of second grinding stations arranged in sequence;

[0021] The first grinding robot and the second grinding robot are located between the first loading station and the second loading station, and the second grinding robot is arranged on one side parallel to the axis of the second loading station; the first grinding robot and the second grinding robot are used to transfer wafers between the temporary storage station, the first loading station and the second loading station;

[0022] The second grinding station is located on the other side parallel to the axis of the second loading station arrangement, and each second grinding station is adjacent to at least one second loading station.

[0023] In one embodiment, the chemical mechanical planarization apparatus includes two of the planarization modules;

[0024] The two planarization modules are symmetrically arranged; wherein, the conduction stations in the two planarization modules are adjacent and the first grinding robots are adjacent, or, the drying stations in the two planarization modules are adjacent and the first grinding robots are adjacent;

[0025] When the conduction stations in two planarization modules are adjacent, the conduction stations in the two planarization modules are arranged side by side or vertically layered, the two buffer stations are arranged side by side or vertically layered, and the two temporary storage stations are arranged side by side or vertically layered.

[0026] In one embodiment, the grinding unit further includes a high-pressure flushing device;

[0027] The high-pressure flushing device is used to clean the wafers moving between the first loading station and the first grinding station.

[0028] In one embodiment, the chemical mechanical planarization apparatus further includes a front-end module, which includes a first front-end robotic arm, a second front-end robotic arm, and a transmission unit.

[0029] The first front-end robotic arm and the second front-end robotic arm are located between the transmission unit and the planarization module, and the first front-end robotic arm and the second front-end robotic arm are located on the side closer to the transmission station and the drying station;

[0030] The transmission unit is used to transmit wafers to be processed and wafers that have been dried.

[0031] The first front-end robotic arm is used to transfer the wafer to be processed in the transmission unit to the transmission station;

[0032] The second front-end robotic arm is used to transfer the dried wafers in the drying station to the transfer unit.

[0033] In one embodiment, the transmission unit includes at least one wafer transfer box;

[0034] The wafer transfer box is used to place wafers to be processed and / or dried wafers.

[0035] In the planarization module of this embodiment, the post-grinding cleaning process of the wafer is divided into two steps by adding a buffer station and a brush cleaning station. The first step is to clean the wafer, and the second step is to brush clean and dry the wafer. After the first step of cleaning, a wafer can be temporarily stored in the buffer station, allowing the cleaning station to clean the next wafer without waiting for the first wafer to dry. In this method, each station can process one wafer independently without interference. Compared to cleaning and drying one wafer before cleaning and drying the next, this method can clean and dry multiple wafers simultaneously, reducing wafer waiting time and thus improving wafer cleaning efficiency. Furthermore, by setting up the buffer station, when wafer congestion occurs in the grinding unit or cleaning unit due to internal formula settings or other factors, the wafer is temporarily held in the buffer station and not subsequently transmitted or processed, preventing wafer congestion at the temporary storage station from affecting the normal flow of processes. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a schematic diagram of the structure of the first chemical mechanical planarization device provided in this embodiment of the present invention;

[0038] Figure 2 This is a schematic diagram of the structure of the second chemical mechanical planarization device provided in this embodiment of the present invention;

[0039] Figure 3 This is a schematic diagram of the structure of the third chemical mechanical planarization device provided in this embodiment of the present invention;

[0040] Figure 4 This is a schematic diagram of the structure of the fourth chemical mechanical planarization device provided in this embodiment of the present invention;

[0041] Figure 5This is a schematic diagram of the structure of the fifth chemical mechanical planarization device provided in this embodiment of the present invention. Detailed Implementation

[0042] To enable those skilled in the art to better understand this solution, the technical solutions in the embodiments of this solution will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this solution, not all of them. Based on the embodiments of this solution, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this solution.

[0043] The term "comprising" and any other variations thereof in the specification, claims, and accompanying drawings of this invention mean "including but not limited to," and are intended to cover a non-exclusive inclusion, not limited to the examples listed herein. Furthermore, the terms "first" and "second," etc., are used to distinguish different objects, not to describe a specific order.

[0044] The implementation of this utility model will be described in detail below with reference to the accompanying drawings:

[0045] Figure 1 The structure of the first chemical mechanical planarization apparatus provided in this embodiment of the present invention is shown. For ease of explanation, only the parts related to this embodiment of the present invention are shown, and are described in detail below:

[0046] like Figure 1 As shown, the chemical mechanical planarization device 1 provided in this embodiment of the present invention includes at least one planarization module; the planarization module includes a cleaning unit Q and a grinding unit M.

[0047] Here, the grinding unit M is used to grind the fed wafers to achieve wafer surface planarization. The cleaning unit Q is used to transfer the wafers and to clean, brush, and dry them after grinding to ensure that the cleanliness of the wafer surface meets the requirements of subsequent production processes.

[0048] The cleaning unit Q has two rows of workstations; one row of workstations includes a conduction workstation TS, a buffer workstation B, and a temporary storage workstation C arranged in sequence; the other row of workstations includes a cleaning workstation L, a brush washing workstation P, and a drying workstation D arranged in sequence; wherein, the conduction workstation TS and the drying workstation D are located on the side away from the grinding unit M, and the temporary storage workstation C and the cleaning workstation L1 are located on the side closer to the grinding unit M.

[0049] Here, the transfer station TS is at the beginning of the planarization process, used to receive the wafers to be processed. The buffer station B is used to place wafers awaiting transfer to the temporary storage station and wafers cleaned at the cleaning station L, serving as a transition and buffer. The temporary storage station C is used to place wafers awaiting grinding and polished wafers, facilitating wafer feeding into and removal from the grinding unit M; it is a temporary storage point for wafers before and after grinding.

[0050] Cleaning station L is used to clean the polished wafers, removing impurities and residues generated during the polishing process. Brush cleaning station P is used to brush the cleaned wafers transferred from buffer station B, allowing for further cleaning of the wafer surface using a brush. Drying station D is used to dry the brushed wafers, removing moisture from their surface and preparing them for subsequent processing.

[0051] In this embodiment, the conduction station TS and the drying station D are located on the side away from the polishing unit M, that is, both are located at the starting position of the planarization module, which facilitates the receiving and sending of wafers.

[0052] The temporary storage station C and the cleaning station L are located on the side close to the grinding unit M, which facilitates the transfer of wafers between the temporary storage station C and the grinding unit M, as well as the delivery of the ground wafers to the cleaning station L. This enables rapid wafer transfer, reduces transmission time and distance, and improves production efficiency.

[0053] The above arrangement allows the two rows of stations in the cleaning unit Q and the grinding unit M to form a "U"-shaped processing flow, making the process of the wafer from entering the cleaning unit Q (conduction station TS) to grinding the wafer, and then to cleaning, brushing and drying before leaving the cleaning unit Q (drying station D) smoother, reducing the waiting time in the planarization process and improving production efficiency.

[0054] Optionally, the cleaning station L can be used for megasonic cleaning of the wafer. Multiple cleaning stations can be set in the cleaning unit Q, for example, two consecutive cleaning stations (see...). Figure 2 A second cleaning station (L2) can be set after the first cleaning station (L1) to perform two mega-sound cleanings on the wafer, followed by brushing.

[0055] In the planarization module of this embodiment, the post-grinding cleaning process of the wafer is divided into two steps by adding a buffer station and a brush cleaning station. The first step is to clean the wafer, and the second step is to brush clean and dry the wafer. After the first step of cleaning, a wafer can be temporarily stored in the buffer station, allowing the cleaning station to clean the next wafer without waiting for the first wafer to dry. In this method, each station can process one wafer independently without interference. Compared to cleaning and drying one wafer before cleaning and drying the next, this method can clean and dry multiple wafers simultaneously, reducing wafer waiting time and thus improving wafer cleaning efficiency. Furthermore, by setting up the buffer station, when wafer congestion occurs in the grinding unit or cleaning unit due to internal formula settings or other factors, the wafer is temporarily held in the buffer station and not subsequently transmitted or processed, preventing wafer congestion at the temporary storage station from affecting the normal flow of processes.

[0056] In one embodiment, buffer station B includes a first buffer layer and a second buffer layer located at different heights; wherein the height of the first buffer layer is higher than that of the second buffer layer; the first buffer layer is used to place the wafer to be processed; and the second buffer layer is used to place the cleaned wafer.

[0057] In this embodiment, the wafer to be processed is a dry wafer, and the cleaned wafer is a wet wafer. The wafer to be processed, which is a dry wafer, is placed on the upper first buffer layer, and the cleaned wafer, which is a wet wafer, is placed on the lower second buffer layer. This can separate the dry wafer and the wet wafer and avoid the influence of the wet wafer on the dry wafer, effectively protecting the wafer that has not been polished so as not to affect the subsequent polishing process of the wafer to be processed.

[0058] Optionally, a moisturizing device is provided in buffer station B, which is used to moisturize the wafers in buffer station B.

[0059] In this embodiment, moisturizing the wafer with a moisturizing device can prevent oxidation of the wafer during the waiting process, ensuring the smooth progress of the next operation. Moisturizing can be applied only to the wet wafer. Alternatively, a moisturizing device can also be installed in the brush cleaning station to moisturize the wafer.

[0060] Here, the buffer station B, the first cleaning station L, the second cleaning station L2, and the brush cleaning station P can be enclosed environments, equipped with pneumatically or electrically controlled doors and humidity control devices to reduce contamination of the wafers within the equipment and to prevent the humidity control devices from affecting the internal environment. The doors can automatically open and close during wafer loading and unloading. When the buffer station is closed, the humidity control function can be activated to keep the wafers moisturized.

[0061] Alternatively, the temporary storage station C may include a first temporary storage layer and a second temporary storage layer at different heights; wherein the height of the first temporary storage layer is higher than that of the second temporary storage layer; the first temporary storage layer is used to place the wafer to be processed; the second temporary storage layer is used to place the polished wafer, separating the dry wafer from the wet wafer. Similarly, a moisturizing device may also be provided in the temporary storage station C to keep the wafers in the temporary storage station C moisturized.

[0062] In one embodiment, such as Figure 1 As shown, the planarization module also includes a first transfer robot CR1 and a second transfer robot CR2; wherein the first transfer robot and the second transfer robot are arranged between two rows of workstations in the cleaning unit.

[0063] The first transfer robot CR1 is also set between the transfer station TS and the buffer station B, and is used to transfer the wafer to be processed on the transfer station TS to the first buffer layer, transfer the cleaned wafer on the second buffer layer to the brush cleaning station P, and transfer the cleaned wafer in the brush cleaning station P to the drying station D.

[0064] The second transfer robot CR2 is also set between the buffer station B and the temporary storage station C, and is used to transfer the wafer to be processed in the first buffer layer to the temporary storage station C, transfer the wafer that has been ground on the temporary storage station C to the cleaning station L, and transfer the cleaned wafer on the cleaning station L to the second buffer layer.

[0065] In this embodiment, the first transfer robot CR1 and the second transfer robot CR2, in addition to being responsible for transferring the wafers to be processed between the conduction station TS, the buffer station B, and the temporary storage station C, also handle the transfer of the polished and cleaned wafers between the temporary storage station C, the cleaning station L, and the buffer station B. The first transfer robot CR1 is also responsible for transferring the wafers between the buffer station B, the brush cleaning station P, and the drying station D. This avoids secondary contamination of the cleaned wafers by the second transfer robot CR2, ensuring the cleanliness of the wafers. The first transfer robot CR1 and the second transfer robot CR2 can handle wafers with different levels of cleanliness, improving transfer efficiency.

[0066] In one embodiment, such as Figure 2 The structure of the second type of chemical mechanical planarization equipment shown includes a grinding unit comprising a first grinding zone and a first grinding robot PR1; the first grinding zone includes a plurality of first loading stations WD1 arranged in sequence and a plurality of first grinding stations PX1 arranged in sequence.

[0067] Here, the first grinding area is the specific working area for wafer grinding, and the first grinding robot is responsible for the transfer of wafers between the grinding unit M and the cleaning unit Q. Among them, the first loading station WD1 is used to carry and transfer wafers during different grinding steps, and the first grinding station PX1 is used to perform different grinding processes on the wafers.

[0068] The first grinding robot PR1 is positioned on one side parallel to the axis of the first loading station. The first grinding robot PR1 is used to transfer wafers between the temporary storage station C and the first loading station WD1.

[0069] Here, the first grinding robot PR1 can move to one side of the first loading station WD1, and can easily move between the temporary storage station C and the first loading station WD1, facilitating wafer transfer operations.

[0070] The first grinding station PX1 is located on the other side of the axis parallel to the first loading station WD1, and each first grinding station PX1 is adjacent to at least one first loading station WD1.

[0071] Here, the first grinding station PX1 is located on the other side of the first loading station WD1, which allows the wafer to quickly and easily enter the first grinding station PX1 from the first loading station WD1 for grinding operations.

[0072] Optionally, each first grinding station PX1 includes a grinding pad and a grinding head. By rotating the grinding head above the first loading station, the wafer can be loaded from the first loading station using the grinding head. Then, by rotating the grinding head, the wafer can be rotated above the grinding pad for grinding processing. Figure 2 In the first grinding station PX11, there is a first grinding pad PL1 and a first grinding head H1.

[0073] After grinding is completed, the ground wafer can be placed on the first loading station WD1 by rotating the grinding head for the next step of processing.

[0074] During the polishing process, polishing fluid and deionized water may flow out, and the polishing pad can be repaired to ensure its continued use.

[0075] Optionally, the polishing unit M also includes a high-pressure rinsing device; the high-pressure rinsing device is used to clean the wafer moving between the first loading station WD1 and the first polishing station PX1, so as to keep the polishing head and the wafer clean, improve the polishing rate, and reduce the scratch and contamination rate of the wafer.

[0076] In one embodiment, such as Figure 3As shown, the grinding unit M may also include a second grinding zone and a second grinding robot PR2; the second grinding zone includes a plurality of second loading stations WD2 arranged in sequence and a plurality of second grinding stations PX2 arranged in sequence.

[0077] The first grinding robot PR1 and the second grinding robot PR2 are located between the first loading station WD1 and the second loading station WD2, and the second grinding robot PR2 is positioned on one side parallel to the axis of the second loading station WD2; the first grinding robot PR1 and the second grinding robot PR2 are used to transfer wafers between the temporary storage station C, the first loading station WD1 and the second loading station WD2.

[0078] The second grinding station PX2 is located on the other side of the axis parallel to the second loading station WD2, and each second grinding station PX2 is adjacent to at least one second loading station WD2.

[0079] In this embodiment, the grinding unit M may also be equipped with a second grinding area and a second grinding robot PR2 to grind multiple wafers, thereby improving the efficiency of wafer grinding. The configuration of the second grinding area and the second grinding robot PR2 can be the same as that of the first grinding area and the first grinding robot PR1.

[0080] In one embodiment, the chemical mechanical planarization apparatus includes two planarization modules; the two planarization modules are symmetrically arranged; wherein the conduction stations in the two planarization modules are adjacent and the first grinding robots are adjacent, or the drying stations in the two planarization modules are adjacent and the first grinding robots are adjacent.

[0081] When the conduction stations in two flattening modules are adjacent, the conduction stations in the two flattening modules are set side by side or vertically layered, the two buffer stations are set side by side or vertically layered, and the two temporary storage stations are set side by side or vertically layered.

[0082] In this embodiment, chemical mechanical planarization may include two symmetrically arranged planarization modules. The two planarization modules can be independent of each other and can operate independently or cooperate with each other.

[0083] Here, the first grinding robots PR1 in the two planarization modules are adjacent, meaning the two planarization modules are symmetrically arranged with the straight line containing the two first grinding robots PR1 as the axis of symmetry. The first grinding robots PR1 can transfer wafers between the temporary storage station C and the first loading station WD1. Because the two planarization modules are adjacent, the grinding robot in one planarization module can perform the function of the grinding robot in the other planarization module, ensuring the normal operation of both planarization modules even if one grinding robot fails. Alternatively, the grinding robot in one planarization module can be responsible for transferring the wafer to be processed from the temporary storage station C to the first loading station WD1, while the grinding robot in the other planarization module can be responsible for transferring the ground wafer from the first loading station WD1 to the temporary storage station C, separating the transfer of wafers into and out of the grinding unit M to ensure the cleanliness of the wafers to be processed.

[0084] When the grinding requirements of the wafer are high, and two planarization modules are needed to grind the wafer, one grinding robot can be used to send the wafer ground by one planarization module into the other planarization module. Through the cooperation of the two planarization modules, the grinding of a wafer can be completed.

[0085] In addition, the symmetrical distribution of the two flattened modules helps to reduce the design workload of the entire machine tool, improve the efficiency of installation, commissioning and maintenance, and greatly improve the interchangeability of parts and modules.

[0086] When the conduction stations in two flattening modules are adjacent, see Figure 4 The first flattening module 11 and the second flattening module 12 are configured such that the conduction stations TS, the two buffer stations B, and the two temporary storage stations C can be arranged side by side. The two flattening modules are symmetrically and independently configured, allowing for quick and convenient replacement of the flattening modules or their stations.

[0087] See Figure 5 The first planarization module 11 and the second planarization module 12 in the model can have their conduction stations TS, buffer stations B, and temporary storage stations C arranged vertically in layers. In this configuration, the conduction stations TS in the two planarization modules can form a two-layer station, the two buffer stations B can form a four-layer station, and the two temporary storage stations C can also form a four-layer station. This reduces the area of ​​each planarization module, decreases the distance the robot arm needs to transfer the wafer, and thus improves planarization efficiency.

[0088] When buffer station B is a four-layer station, it includes a first buffer layer, a second buffer layer, a third buffer layer, and a fourth buffer layer (from top to bottom) of different heights. The first buffer layer is used to place the wafers to be processed in one of the planarization modules; the second buffer layer is used to place the cleaned wafers in the same planarization module; the third buffer layer is used to place the wafers to be processed in another planarization module; and the fourth buffer layer is used to place the cleaned wafers in the same planarization module. Each buffer layer can be sealed to prevent interference between the wafers. Humidification devices can be installed in the second and fourth buffer layers.

[0089] When the temporary storage station C is a four-layer station, it includes a first temporary storage layer, a second temporary storage layer, a third temporary storage layer, and a fourth temporary storage layer (from top to bottom) of different heights. The first temporary storage layer is used to place the wafer to be processed in one of the planarization modules; the second temporary storage layer is used to place the polished wafer in the same planarization module; the third temporary storage layer is used to place the wafer to be processed in another planarization module; and the fourth temporary storage layer is used to place the polished wafer in the same planarization module. Each of these temporary storage layers can also be sealed to prevent interference between the wafers. A moisture-retaining device can be installed in the second and fourth temporary storage layers.

[0090] In addition, the above are just two specific examples. Other combinations can be selected for the setting of transmission station TS, buffer station B and temporary storage station C. For example, the two transmission stations TS can be set side by side, and the two buffer stations B and the two temporary storage stations C can be set vertically in layers.

[0091] In one embodiment, the chemical mechanical planarization apparatus 1 further includes a front-end module, which includes a first front-end robotic arm FR1, a second front-end robotic arm FR2, and a transmission unit 131. The first front-end robotic arm FR1 and the second front-end robotic arm FR2 are located between the transmission unit 131 and the planarization module, and the first front-end robotic arm FR1 and the second front-end robotic arm FR2 are located on the side closer to the conduction station TS and the drying station D.

[0092] The transfer unit 131 is used to transfer wafers to be processed and wafers that have been dried. The first front-end robotic arm FR1 is used to transfer the wafers to be processed in the transfer unit to the transfer station TS. The second front-end robotic arm FR2 is used to transfer the wafers that have been dried in the drying station D to the transfer unit 131.

[0093] In this embodiment, the transmission unit 131 is used to carry the wafer to be processed and the dried wafer, and the first front-end robotic arm FR1 and the second front-end robotic arm FR2 are used to transfer the wafer between the transmission unit 131 and the cleaning unit Q to realize the entry and exit of the wafer.

[0094] Here, the first front-end robotic arm FR1 and the second front-end robotic arm FR2 are two robotic arms of a robotic hand. The two front-end robotic arms are jointly controlled by the main body and move simultaneously, but can rotate and work independently.

[0095] Optionally, the first front-end robotic arm FR1 and the second front-end robotic arm FR2 can be two robotic arms of a dual-arm robotic hand. Except for the grasping and releasing actions on the wafer, the actions of the first front-end robotic arm FR1 and the second front-end robotic arm FR2 can be identical.

[0096] Optional, such as Figure 4 and Figure 5 As shown, the transfer unit 131 includes at least one wafer transfer box; the wafer transfer box is used to place wafers to be processed and / or wafers that have been dried.

[0097] In this embodiment, the wafer to be processed is removed from the wafer transfer box, and after grinding, cleaning, and drying, it can be placed back in its original position within the wafer transfer box. When multiple wafer transfer boxes exist, such as the first wafer transfer box F1, the second wafer transfer box F2, the third wafer transfer box F3, and the fourth wafer transfer box F4, the wafer in one of the wafer transfer boxes can be processed. After the wafer in one wafer transfer box is processed, the wafer in the next wafer transfer box is processed.

[0098] In addition, when there are specific requirements for wafer transport, at least two wafer transport boxes can be set up, one for placing the wafer to be processed and the other for placing the dried wafer.

[0099] To facilitate understanding, specific application scenarios will be used as examples below. Figure 5 As shown, the chemical mechanical planarization equipment includes two planarization modules, namely the first planarization module 11 and the second planarization module 12. Each planarization module has a grinding unit including a first grinding area and a first grinding robot PR1. The transfer unit 131 includes a first wafer transfer box F1, a second wafer transfer box F2, a third wafer transfer box F3, and a fourth wafer transfer box F4.

[0100] When the two flattening modules work independently, the workflow of each flattening module is the same. Taking the first flattening module 11 as an example, a brief explanation is given:

[0101] (1) The first front-end robotic arm FR1 takes out the wafer to be processed from the first wafer transfer box F1 and sends it to the transfer station TS; the first transfer robot CR1 takes out the wafer to be processed from the transfer station TS and sends it to the upper layer of the buffer station B, i.e. the first buffer layer; the second transfer robot CR2 takes out the wafer to be processed from the first buffer layer and sends it to the temporary storage station C, waiting for the previous wafer to be processed.

[0102] (2) The first grinding robot PR1 in the grinding unit M takes out the wafer to be processed from the temporary storage station C and places it on a first loading station WD1 (the first or last of multiple first loading stations arranged according to the grinding function of each first grinding station, such as the first first loading station WD11); the grinding head H1 of the first first grinding station PX11 will rotate to the first first loading station WD11 after cleaning to load the wafer, and then rotate to the grinding disk PL1 of the first first grinding station PX11 to grind the wafer. After the processing is completed, the first grinding head H1 is lifted and rotated to the second first loading station WD12 to unload the wafer; the grinding head of the second first grinding station PX12 will repeat the above steps, that is, load the wafer, grind, unload the wafer, and unload the ground wafer to the third first loading station WD13.

[0103] (3) The first grinding robot PR1 transfers the wafer on the third first loading station WD13 to the temporary storage station C. The second transfer robot CR2 takes out the ground wafer from the temporary storage station C and sends it into the first cleaning station L1 for cleaning. The second transfer robot CR2 takes out the wafer from the first cleaning station L1 and sends it into the second cleaning station L2 for cleaning. After cleaning, the second transfer robot CR2 takes out the wafer from the second cleaning station L2 and sends it into the lower layer of the buffer station B, i.e., the second buffer layer.

[0104] (4) The first transfer robot CR1 takes out the cleaned wafer from the second buffer layer and sends it to the brush cleaning station P for brushing; after brushing, the first transfer robot CR1 takes out the cleaned wafer from the brush cleaning station P and sends it to the drying station D for drying.

[0105] (5) After drying is completed, the second front-end robotic arm FR2 takes out the dried wafer from the drying station D and sends it back to the first wafer transfer box F1.

[0106] When the two planarization modules work together, after step (2) above, one of the first grinding robots PR1 can transfer the wafer on the third first loading station WD13 to the first loading station of the grinding unit in the other planarization module. Step (2) above is repeated in the grinding unit M of the planarization module to perform secondary grinding on the wafer. After all grinding is completed, the subsequent steps (3), (4) and (5) are executed.

[0107] The above-described embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.

Claims

1. A chemical mechanical planarization device, characterized in that, It includes at least one planarization module; the planarization module includes a cleaning unit and a grinding unit; The cleaning unit has two rows of workstations; one row of workstations includes a conduction workstation, a buffer workstation, and a temporary storage workstation arranged in sequence; the other row of workstations includes a cleaning workstation, a brush washing workstation, and a drying workstation arranged in sequence; wherein, the conduction workstation and the drying workstation are located on the side away from the grinding unit, and the temporary storage workstation and the cleaning workstation are located on the side closer to the grinding unit. The conduction station is used to receive wafers to be processed; the buffer station is used to place wafers to be processed waiting to be transferred to the temporary storage station and wafers cleaned by the cleaning station; the temporary storage station is used to place wafers to be processed waiting to be ground and wafers that have been ground. The grinding unit is used to grind the fed wafer to be processed; The cleaning station is used to clean the polished wafers; the brush cleaning station is used to brush the cleaned wafers transferred from the buffer station; and the drying station is used to dry the brushed wafers.

2. The chemical mechanical planarization apparatus as described in claim 1, characterized in that, The buffer station includes a first buffer layer and a second buffer layer located at different heights; wherein, the height of the first buffer layer is higher than that of the second buffer layer. The first buffer layer is used to place the wafer to be processed; The second buffer layer is used to place the cleaned wafer.

3. The chemical mechanical planarization apparatus as described in claim 2, characterized in that, The buffer station is equipped with a moisturizing device, which is used to moisturize the wafers in the buffer station.

4. The chemical mechanical planarization apparatus as described in claim 2, characterized in that, The planarization module further includes a first transfer robot and a second transfer robot; wherein the first transfer robot and the second transfer robot are arranged between two rows of workstations in the cleaning unit; The first transfer robot is also disposed between the conduction station and the buffer station, for transferring the wafer to be processed on the conduction station to the first buffer layer, transferring the cleaned wafer on the second buffer layer to the brush cleaning station, and transferring the cleaned wafer in the brush cleaning station to the drying station. The second transfer robot is also disposed between the buffer station and the temporary storage station, for transferring the wafer to be processed in the first buffer layer to the temporary storage station, transferring the wafer that has been ground in the temporary storage station to the cleaning station, and transferring the cleaned wafer in the cleaning station to the second buffer layer.

5. The chemical mechanical planarization apparatus as described in claim 1, characterized in that, The grinding unit includes a first grinding area and a first grinding robot; the first grinding area includes a plurality of first loading stations arranged in sequence and a plurality of first grinding stations arranged in sequence. The first grinding robot is positioned on one side parallel to the axis of the first loading station, and the first grinding robot is used to transfer wafers between the temporary storage station and the first loading station. The first grinding station is located on the other side parallel to the axis of the first loading station arrangement, and each first grinding station is adjacent to at least one first loading station.

6. The chemical mechanical planarization apparatus as described in claim 5, characterized in that, The grinding unit further includes a second grinding zone and a second grinding robot; the second grinding zone includes a plurality of second loading stations arranged in sequence and a plurality of second grinding stations arranged in sequence. The first grinding robot and the second grinding robot are located between the first loading station and the second loading station, and the second grinding robot is arranged on one side parallel to the axis of the second loading station; the first grinding robot and the second grinding robot are used to transfer wafers between the temporary storage station, the first loading station and the second loading station; The second grinding station is located on the other side parallel to the axis of the second loading station arrangement, and each second grinding station is adjacent to at least one second loading station.

7. The chemical mechanical planarization apparatus as described in claim 5, characterized in that, The chemical mechanical planarization apparatus includes two of the planarization modules; The two planarization modules are symmetrically arranged; wherein, the conduction stations in the two planarization modules are adjacent and the first grinding robots are adjacent, or, the drying stations in the two planarization modules are adjacent and the first grinding robots are adjacent; When the conduction stations in two planarization modules are adjacent, the conduction stations in the two planarization modules are arranged side by side or vertically layered, the two buffer stations are arranged side by side or vertically layered, and the two temporary storage stations are arranged side by side or vertically layered.

8. The chemical mechanical planarization apparatus as described in claim 5, characterized in that, The grinding unit also includes a high-pressure rinsing device; The high-pressure flushing device is used to clean the wafers moving between the first loading station and the first grinding station.

9. A chemical mechanical planarization apparatus as described in any one of claims 1 to 8, characterized in that, The chemical mechanical planarization equipment also includes a front-end module, which includes a first front-end robotic arm, a second front-end robotic arm, and a transmission unit. The first front-end robotic arm and the second front-end robotic arm are located between the transmission unit and the planarization module, and the first front-end robotic arm and the second front-end robotic arm are located on the side closer to the transmission station and the drying station; The transmission unit is used to transmit wafers to be processed and wafers that have been dried. The first front-end robotic arm is used to transfer the wafer to be processed in the transmission unit to the transmission station; The second front-end robotic arm is used to transfer the dried wafers in the drying station to the transfer unit.

10. A chemical mechanical planarization apparatus as described in claim 9, characterized in that, The transmission unit includes at least one wafer transfer box; The wafer transfer box is used to place wafers to be processed and / or dried wafers.

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